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CN103187603A - Wide-stopband LTCC (low temperature co-fired ceramic) band-pass filter based on magnetoelectric coupling counteraction technology - Google Patents

Wide-stopband LTCC (low temperature co-fired ceramic) band-pass filter based on magnetoelectric coupling counteraction technology Download PDF

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CN103187603A
CN103187603A CN2013100968323A CN201310096832A CN103187603A CN 103187603 A CN103187603 A CN 103187603A CN 2013100968323 A CN2013100968323 A CN 2013100968323A CN 201310096832 A CN201310096832 A CN 201310096832A CN 103187603 A CN103187603 A CN 103187603A
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CN103187603B (en
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章秀银
代鑫
蔡泽煜
胡斌杰
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South China University of Technology SCUT
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Abstract

本发明公开一种基于磁电耦合抵消技术的宽阻带LTCC带通滤波器,包括两个四分之一波长谐振器,金属地板和一对馈电结构。谐振器和馈电贴片分布在四层导体层上。第一层是有大块馈电贴片和CPW馈电口的馈电层,第二层和第四层分布两个四分之一波长谐振器,第三层是接地层。馈电贴片采用宽边耦合的方式将能量传输到谐振器上。谐振器之间通过边耦合传输能量,两个谐振器之间同时存在磁耦合和电耦合,距离接地端较近区间的耦合以磁耦合为主,谐振器的开路端附近区间的耦合以电耦合为主,调节磁耦合及电耦合的强度可以方便地调节滤波器传输零点的位置。本发明具有多传输零点,选择性和阻带抑制性能优良,结构紧凑。

Figure 201310096832

The invention discloses a wide stopband LTCC bandpass filter based on magnetoelectric coupling cancellation technology, which includes two quarter-wavelength resonators, a metal floor and a pair of feed structures. The resonators and feed patches are distributed over four conductor layers. The first layer is the feed layer with large feed patches and CPW feed ports, the second and fourth layers distribute two quarter-wavelength resonators, and the third layer is the ground layer. The feed patch uses broadside coupling to transfer energy to the resonator. Energy is transmitted between the resonators through side coupling. There are both magnetic coupling and electrical coupling between the two resonators. Mainly, adjusting the strength of magnetic coupling and electrical coupling can easily adjust the position of filter transmission zero. The invention has multiple transmission zero points, excellent selectivity and stop band suppression performance, and compact structure.

Figure 201310096832

Description

一种基于磁电耦合抵消技术的宽阻带LTCC带通滤波器A Wide Stopband LTCC Bandpass Filter Based on Magnetoelectric Coupling Cancellation Technology

技术领域 technical field

本发明涉及一种基于LTCC工艺的宽阻带带通滤波器,特别是涉及利用磁电混合耦合产生多个传输零点,可应用于射频前端电路中的带通滤波器。 The invention relates to a wide-stop-band band-pass filter based on LTCC technology, in particular to a band-pass filter which can be applied to a radio frequency front-end circuit by using magnetoelectric hybrid coupling to generate a plurality of transmission zero points.

背景技术 Background technique

随着信息产业的飞速发展,各种通信系统不断涌现,无线通信技术的飞速发展以及全球通信频段的日益紧张更是对微波滤波器提出了更加严格的要求。现代滤波器要求具有高性能,小尺寸,宽阻带,低造价等特性。其中,小尺寸,宽阻带是单通带滤波器性能的重要指标。 With the rapid development of the information industry, various communication systems continue to emerge, the rapid development of wireless communication technology and the increasingly tense global communication frequency bands put forward stricter requirements for microwave filters. Modern filters require high performance, small size, wide stop band, and low cost. Among them, small size and wide stopband are important indicators of single passband filter performance.

现有的滤波器实现阻带抑制的方法有很多种,第一种方法是利用电磁信号的多径传输,在某一频点多径传输的电磁场相位相反,相互抵消,产生零点,这种方法可以利用交叉耦合实现,也可以利用源负载耦合(source-load couple)实现;第二种方法是利用阶跃阻抗谐振器(SIR),这种谐振器可以将滤波器的二次谐波推后到通带中心频率的2.5-3倍左右的频率上,二次谐波中心频率与通带中心频率的比值取决于SIR的结构,用多个不同结构的有相同通带中心频率的阶跃阻抗谐振器串联,即可实现阻带的抑制;第三种方法是利用传输线的四分之一波长倒置性,当一端开路的四分之一波长传输线连接在输入输出端口时,开路端等效到输入输出端口为短路,从而将电磁波全部放射回去,于是产生了传输零点,马刺线就是其中的一种应用,当马刺线的电波长等于四分之一波长时,马刺线连接I/O端口的位置就被短路掉,在该频点上就产生了传输零点;其他方法还有使用椭圆函数滤波器等。 There are many methods for existing filters to achieve stop-band suppression. The first method is to use the multipath transmission of electromagnetic signals. At a certain frequency point, the phases of electromagnetic fields transmitted by multipath are opposite, cancel each other, and generate zero points. This method This can be achieved with cross-coupling or with a source-load couple; the second approach is to use a stepped impedance resonator (SIR), which pushes the second harmonic of the filter back To the frequency of about 2.5-3 times the passband center frequency, the ratio of the second harmonic center frequency to the passband center frequency depends on the structure of the SIR, using multiple step impedances with the same passband center frequency of different structures The resonators can be connected in series to suppress the stop band; the third method is to use the quarter-wavelength inversion of the transmission line. When a quarter-wavelength transmission line with one end open is connected to the input and output ports, the open end is equivalent to The input and output ports are short-circuited, so that all the electromagnetic waves are radiated back, so a transmission zero point is generated. The spur line is one of the applications. When the electrical wavelength of the spur line is equal to a quarter of the wavelength, the spur line is connected to the I/O port. The position is short-circuited, and a transmission zero point is generated at this frequency point; other methods include using an elliptic function filter, etc.

然而,现有的阻带抑制滤波器都有较为复杂的结构,或者存在尺寸较大,插损大等问题。 However, the existing stop-band suppression filters all have relatively complex structures, or have problems such as large size and large insertion loss.

发明内容 Contents of the invention

       为克服以上提到的滤波器多传输零点与结构复杂、体积大之间的设计矛盾,本发明提供了一种基于磁电耦合抵消技术的宽阻带LTCC带通滤波器。该滤波器采用LTCC(Low Temperature Co-Fired Ceramic低温共烧陶瓷)技术,极大地缩小了带通滤波器的体积。LTCC多层结构的滤波器除了具有小型化、轻量化的优点,还具有成本低,有利于批量生产,良好的高频性能,插损小等传统微带滤波器没有的特点。 In order to overcome the design contradiction between multiple transmission zeros of the filter mentioned above and the complex structure and large volume, the present invention provides a wide stopband LTCC bandpass filter based on magnetoelectric coupling cancellation technology. The filter adopts LTCC (Low Temperature Co-Fired Ceramic) technology, which greatly reduces the size of the bandpass filter. In addition to the advantages of miniaturization and light weight, the filter of LTCC multi-layer structure also has the characteristics of low cost, favorable for mass production, good high-frequency performance, and small insertion loss, etc. that traditional microstrip filters do not have.

本发明采用如下技术方案实现: The present invention adopts following technical scheme to realize:

基于磁电耦合抵消技术的宽阻带LTCC带通滤波器,其包括四层介质基板和四层导体层,四层介质基板从上到下依次为第一介质板、第二介质板、第三介质板和第四介质板,所述的四层介质基板均为LTCC陶瓷介质基板;所述第一导体层印制于第一介质基板上表面,第二导体层印制于第二介质基板上表面,第三导体层印制于第三介质基板上表面,第四导体层印制于第四介质基板上表面;所述印制采用LTCC印刷工艺。 A wide stopband LTCC bandpass filter based on magnetoelectric coupling cancellation technology, which includes four dielectric substrates and four conductor layers, the four dielectric substrates are the first dielectric plate, the second dielectric plate, and the third dielectric plate from top to bottom. A dielectric plate and a fourth dielectric plate, the four-layer dielectric substrates are all LTCC ceramic dielectric substrates; the first conductor layer is printed on the upper surface of the first dielectric substrate, and the second conductor layer is printed on the second dielectric substrate On the surface, the third conductor layer is printed on the upper surface of the third dielectric substrate, and the fourth conductor layer is printed on the upper surface of the fourth dielectric substrate; the printing adopts LTCC printing process.

进一步的,所述第一导体层由一对结构相同的馈电结构组成,这对结构相同的馈电结构呈镜像对称,每一个馈电结构包括一块馈电贴片、一个CPW馈电口和一个L型金属微带线,L型金属微带线连接在馈电贴片靠近前述镜像对称中心的一侧,并与对称中心另一侧的L型金属微带线构成源负载耦合,源负载耦合在滤波器通带左边产生了一个传输零点;CPW馈电口通过接地金属化过孔连接到第三导体层。 Further, the first conductor layer is composed of a pair of feed structures with the same structure, and the pair of feed structures with the same structure are mirror images, and each feed structure includes a feed patch, a CPW feed port and An L-shaped metal microstrip line, the L-shaped metal microstrip line is connected to the side of the feed patch close to the symmetrical center of the aforementioned mirror image, and forms a source-load coupling with the L-shaped metal microstrip line on the other side of the symmetrical center, and the source load The coupling creates a transmission zero to the left of the filter passband; the CPW feed is connected to the third conductor layer through a ground metallized via.

进一步的,第二导体层和第四导体层上分布有两个四分之一波长谐振器;每个四分之一波长谐振器均有一部分位于第二导体层,另一部分位于第四导体层上,这两部分通过第二金属化过孔相连,金属化过孔穿过位于第三导体层上的开孔,且金属化过孔不与第三导体层直接接触;四分之一波长谐振器的短路端位于第二导体层且通过第一金属化过孔连接到第三导体层;所述两个四分之一波长谐振器在第二导体层和第四导体层上均呈镜像对称分布,位于同一导体层上的四分之一波长谐振器部分通过边耦合产生磁电耦合,四分之一波长谐振器在第二导体层上的耦合部分为谐振器短路端,以磁耦合为主;四分之一波长谐振器在第四导体层上的耦合部分为谐振器开路端,以电耦合为主。 Further, two quarter-wavelength resonators are distributed on the second conductor layer and the fourth conductor layer; a part of each quarter-wavelength resonator is located in the second conductor layer, and the other part is located in the fourth conductor layer Above, the two parts are connected through the second metallized via hole, the metallized via hole passes through the opening on the third conductor layer, and the metallized via hole is not in direct contact with the third conductor layer; quarter-wavelength resonance The short-circuit end of the resonator is located on the second conductor layer and connected to the third conductor layer through the first metallized via hole; the two quarter-wavelength resonators are mirror-image symmetrical on the second conductor layer and the fourth conductor layer Distribution, the quarter-wavelength resonator part on the same conductor layer generates magnetoelectric coupling through side coupling, the coupling part of the quarter-wavelength resonator on the second conductor layer is the short-circuit end of the resonator, and the magnetic coupling is main; the coupling part of the quarter-wavelength resonator on the fourth conductor layer is the open circuit end of the resonator, and is mainly electrically coupled.

进一步的,所述第三导体层为金属地板,第三导体层上有两个开孔供所述金属化过孔穿过,并且金属化过孔和金属地板之间留有间隙。 Further, the third conductor layer is a metal floor, there are two openings on the third conductor layer for the metallized vias to pass through, and there is a gap between the metallized vias and the metal floor.

本发明采用四分之一波长谐振器,相较于二分之一波长谐振器,有效地减小了滤波器的尺寸;并且,采用了LTCC多层结构工艺制造,通过在不同层放置馈电贴片和谐振器,用金属过孔将不同层的微带线连接起来,使滤波器结构更加紧凑;除此之外,本发明还利用不同介质厚度实现SIR(Stepped-Impedance Resonator阶跃阻抗谐振器),这样可以减小电耦合量,有效减小电耦合间距以达到减小尺寸的作用,同时更加方便滤波器传输零点的调节。 The present invention adopts a quarter-wavelength resonator, which effectively reduces the size of the filter compared with a half-wavelength resonator; and adopts the LTCC multi-layer structure process to manufacture, by placing feeders in different layers The chip and the resonator use metal vias to connect the microstrip lines of different layers to make the filter structure more compact; in addition, the present invention also uses different dielectric thicknesses to realize SIR (Stepped-Impedance Resonator step impedance resonance) device), which can reduce the amount of electrical coupling, effectively reduce the electrical coupling distance to achieve the effect of reducing size, and at the same time, it is more convenient to adjust the transmission zero point of the filter.

该滤波器的第一导体层上的两个L型金属微带线,形成了源负载耦合,这样就在通带左边产生了一个零点;在第二导体层,四分之一波长谐振器短路端相互耦合,并以磁耦合为主,在第四导体层,四分之一波长谐振器开路端相互耦合,并以电耦合为主,电耦合和磁耦合相互抵消产生了三个传输零点,通过调节谐振器电耦合和磁耦合的强度可以方便调节零点位置;以上两种耦合方式产生了多个可控传输零点,提高了滤波器的通带选择性,抑制了滤波器的高次谐波,获得了较宽的阻带。 The two L-shaped metal microstrip lines on the first conductor layer of the filter form a source-load coupling, which creates a zero point on the left side of the passband; on the second conductor layer, the quarter-wavelength resonator is short-circuited In the fourth conductor layer, the open-circuited ends of the quarter-wavelength resonator are coupled to each other, and the electrical coupling is the main force. The electrical coupling and magnetic coupling cancel each other to produce three transmission zero points. The zero point position can be easily adjusted by adjusting the strength of the resonator's electrical coupling and magnetic coupling; the above two coupling methods generate multiple controllable transmission zero points, which improves the passband selectivity of the filter and suppresses the higher harmonics of the filter , a wider stop band is obtained.

      与现有技术相比,本发明具有以下优点: Compared with the prior art, the present invention has the following advantages:

      1、采用LTCC多层工艺,使滤波器的结构更加紧凑,有效减小滤波器尺寸; 1. Adopt LTCC multi-layer technology to make the structure of the filter more compact and effectively reduce the size of the filter;

      2、第一导体层上的两个L型金属微带线构成的源负载耦合,在通带左边产生一个零点,提高了滤波器的选择性; 2. The source-load coupling composed of two L-shaped metal microstrip lines on the first conductor layer produces a zero point on the left side of the passband, which improves the selectivity of the filter;

      3、分布在第二导体层和第四导体层上的四分之一波长谐振器在短路端和开路端相互耦合,短路端以磁耦合为主,开路端以电耦合为主,电耦合和磁耦合相互抵消产生了三个传输零点,通过调节谐振器电耦合和磁耦合强度可以方便调节零点位置,这些零点有效地抑制了滤波器的高次谐波,使滤波器获得了极宽的阻带; 3. The quarter-wavelength resonators distributed on the second conductor layer and the fourth conductor layer are coupled to each other at the short-circuit end and the open-circuit end. The short-circuit end is mainly magnetically coupled, and the open-circuit end is mainly electrically coupled. The magnetic coupling cancels each other to produce three transmission zero points. By adjusting the electric coupling and magnetic coupling strength of the resonator, the zero point position can be easily adjusted. These zero points effectively suppress the high-order harmonics of the filter, so that the filter obtains an extremely wide impedance. bring;

      4、馈电贴片与谐振器之间通过宽边耦合实现能量传递,宽边耦合强度决定外部Q值,两个四分之一波长谐振器之间的电耦合与磁耦合量的总和决定耦合系数K,调节Q和K这两个量可以改变带宽,具有很好的灵活性。 4. The energy transfer between the feed patch and the resonator is achieved through broadside coupling. The broadside coupling strength determines the external Q value, and the sum of the electrical coupling and magnetic coupling between two quarter-wavelength resonators determines the coupling. Coefficient K, adjusting the two quantities of Q and K can change the bandwidth, which has good flexibility.

附图说明 Description of drawings

 图1是本发明的立体结构分层示意图。 Fig. 1 is the layered schematic diagram of three-dimensional structure of the present invention.

      图2是本发明的第一导体层俯视示意图。 Figure 2 is a schematic top view of the first conductor layer of the present invention.

      图3是本发明的第二导体层俯视示意图。 Figure 3 is a schematic top view of the second conductor layer of the present invention.

      图4是本发明的第三导体层俯视示意图。 Figure 4 is a schematic top view of the third conductor layer of the present invention.

      图5是本发明的第四导体层俯视示意图。 Figure 5 is a schematic top view of the fourth conductor layer of the present invention.

      图6是本发明的带通滤波器实施例的频率响应特性曲线图。 Figure 6 is a graph of the frequency response characteristics of the bandpass filter embodiment of the present invention.

具体实施方式 Detailed ways

为了更加清楚地说明本发明实施例的技术方案,以下结合附图对本发明的具体实施作进一步说明,但本发明的实施不限于此。 In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings, but the implementation of the present invention is not limited thereto.

如图1所示,本发明实施例提供了一种基于磁电耦合相消技术的宽阻带LTCC二阶带通滤波器,整个滤波器为LTCC多层结构,由四层介质基板和四层导体层组成:第一导体层位于第一介质基板表面,第二导体层位于第一介质基板1和第二介质基板2之间,第三导体层位于第二介质基板2和第三介质基板3之间,第四导体层位于第三介质基板3和第四介质基板4之间;四层介质基板均为LTCC陶瓷介质基板,第一导体层印制于第一介质基板1上表面,第二导体层印制于第二介质基板2上表面,第三导体层印制于第三介质基板3上表面,第四导体层印制于第四介质基板4上表面。 As shown in Figure 1, the embodiment of the present invention provides a wide stopband LTCC second-order bandpass filter based on magnetoelectric coupling cancellation technology. The whole filter is an LTCC multilayer structure consisting of four dielectric substrates and four layers Conductor layer composition: the first conductor layer is located on the surface of the first dielectric substrate, the second conductor layer is located between the first dielectric substrate 1 and the second dielectric substrate 2, and the third conductor layer is located between the second dielectric substrate 2 and the third dielectric substrate 3 The fourth conductor layer is located between the third dielectric substrate 3 and the fourth dielectric substrate 4; the four dielectric substrates are all LTCC ceramic dielectric substrates, the first conductor layer is printed on the upper surface of the first dielectric substrate 1, and the second The conductor layer is printed on the upper surface of the second dielectric substrate 2 , the third conductor layer is printed on the upper surface of the third dielectric substrate 3 , and the fourth conductor layer is printed on the upper surface of the fourth dielectric substrate 4 .

如图2所示,第一层金属导体由一对结构相同的馈电结构组成,呈镜像对称放置,每一个馈电结构由一块馈电贴片5,一个CPW馈电口6和一个L型金属微带线7构成,L型金属微带线7连接在馈电贴片5靠近对称中心的一侧,并与对称中心另一边的L型金属微带线7构成源负载耦合,源负载耦合在通带左边产生了一个传输零点,调节两者之间耦合的间距可改变源负载耦合的强度,从而改变通带左边零点的位置;CPW馈电口通过接地金属化过孔11连接到地板9;此外,馈电贴片5与通过宽边耦合的方式实现馈电端与谐振器之间的能量传送,改变馈电贴片的大小和位置能改变外部Q值的大小,外部Q值与谐振器耦合系数K共同决定了滤波器带宽。 As shown in Figure 2, the first layer of metal conductors consists of a pair of feed structures with the same structure, which are placed symmetrically in a mirror image. Each feed structure consists of a feed patch 5, a CPW feed port 6 and an L-shaped The L-shaped metal microstrip line 7 is connected to the side of the feed patch 5 close to the center of symmetry, and forms a source-load coupling with the L-shaped metal microstrip line 7 on the other side of the symmetry center. The source-load coupling A transmission zero point is generated on the left side of the passband. Adjusting the coupling distance between the two can change the strength of the source-load coupling, thereby changing the position of the zero point on the left side of the passband; ; In addition, the feeding patch 5 realizes the energy transmission between the feeding terminal and the resonator through broadside coupling, changing the size and position of the feeding patch can change the size of the external Q value, the external Q value and the resonance The filter coupling coefficient K together determines the filter bandwidth.

如图3所示,两个四分之一波长谐振器的短路端对称布置在第二层金属导体,在这一层的谐振器的一端通过第二金属化过孔13连接到第四导体层,第四导体层是谐振器开路端所在层,第二金属化过孔13穿过了地板层上面的开孔14,与地板没有直接的物理接触;谐振器的短路端通过第二金属化过孔13连接到地板。两个谐振器的短路端构成边耦合,通过调节耦合部分的金属微带线的长度L13和它们之间的耦合宽度W3可以调节电磁耦合强度,由于耦合部分为谐振器短路端,所以电磁耦合以磁耦合作用为主,图3中矩形虚线圈出的即为边磁耦合区域。 As shown in Figure 3, the short-circuit ends of the two quarter-wavelength resonators are symmetrically arranged on the second layer of metal conductors, and one end of the resonators on this layer is connected to the fourth conductor layer through the second metallized via hole 13 , the fourth conductor layer is the layer where the open circuit end of the resonator is located, and the second metallized via hole 13 passes through the opening 14 above the floor layer, without direct physical contact with the floor; the short circuit end of the resonator passes through the second metallized via hole 14 Hole 13 connects to the floor. The short-circuit ends of the two resonators form side coupling, and the electromagnetic coupling strength can be adjusted by adjusting the length L13 of the metal microstrip line of the coupling part and the coupling width W3 between them. Since the coupling part is the short-circuit end of the resonator, the electromagnetic coupling is as follows: The magnetic coupling is the main effect, and the rectangle dotted circle in Figure 3 is the edge magnetic coupling area.

如图4所示,第三导体层为金属地板9,上面有两个开孔14,连接第二层导体和第四层导体的第二金属化过孔13从这两个开孔穿过,这两个开孔的半径要大于第二金属化过孔13,这样就保证金属化过孔不会和金属地板9有物理连接。连接在金属地板上的还有与第二导体层谐振器短路端相连接的两个第一金属化过孔12,与第一导体层CPW馈电口相连接的四个接地金属化过孔11。 As shown in FIG. 4, the third conductor layer is a metal floor 9 with two openings 14 above, and the second metallized via hole 13 connecting the second layer conductor and the fourth layer conductor passes through these two openings, The radii of these two openings are larger than the second metallized via hole 13 , so as to ensure that the metallized via hole will not be physically connected to the metal floor 9 . Also connected to the metal floor are two first metallized via holes 12 connected to the short-circuit end of the second conductor layer resonator, and four ground metallized via holes 11 connected to the CPW feed port of the first conductor layer .

如图5所示,两个四分之一波长谐振器的开路端对称布置在第四导体层,这一层的谐振器的一端通过第二金属化过孔13连接到第二导体层。两个谐振器的开路端构成边耦合,耦合部分的金属微带线的长度L16和它们之间的耦合宽度W5可以调节电磁耦合强度,耦合部分为谐振器开路端,以电耦合作用为主,图5中矩形虚线圈出的即为边电耦合区域。 As shown in FIG. 5 , the open-circuit ends of the two quarter-wavelength resonators are arranged symmetrically on the fourth conductor layer, and one end of the resonators on this layer is connected to the second conductor layer through the second metallized via hole 13 . The open-circuit ends of the two resonators constitute side coupling. The length L16 of the metal microstrip line in the coupling part and the coupling width W5 between them can adjust the electromagnetic coupling strength. The rectangle dotted circle in Fig. 5 is the edge electric coupling area.

在本实施例中,通带中心频率由四分之一波长谐振器长度决定,通带左边零点的位置主要由源负载耦合强度决定,通带右边的三个零点位置主要由磁电耦合特性决定,谐振器的电耦合端和磁耦合端在这三个频点上相互抵消,形成传输零点;滤波器外部Q值由馈电贴片大小决定,耦合系数K由谐振器电耦合及磁耦合强度的和决定,外部Q值和耦合系数K共同决定了通带带宽。通过调节上述所指出的谐振器长度,源负载耦合,磁电耦合,本实施例获得了所需的通带和阻带特性。 In this embodiment, the central frequency of the passband is determined by the length of the quarter-wavelength resonator, the position of the zero point on the left side of the passband is mainly determined by the source-load coupling strength, and the positions of the three zero points on the right side of the passband are mainly determined by the magnetoelectric coupling characteristics , the electrical coupling end and the magnetic coupling end of the resonator cancel each other at these three frequency points to form a transmission zero point; the external Q value of the filter is determined by the size of the feed patch, and the coupling coefficient K is determined by the electrical coupling and magnetic coupling strength of the resonator The sum of the decision, the external Q value and the coupling coefficient K jointly determine the passband bandwidth. By adjusting the resonator length, source-load coupling, and magnetoelectric coupling indicated above, this embodiment obtains the required passband and stopband characteristics.

下面对本实施例的各项参数描述如下(仅作为实例,本发明的实施不限于此): The parameters of this embodiment are described below (only as an example, and the implementation of the present invention is not limited thereto):

如图2所示,L1为0.4mm,L2为1012 mm, L4为0.65mm,L5为0.5mm,L7为0.6mm,L8为1.27mm, W1为0.1mm,W2为0.1mm;如图3和图5所示,L10为0.154mm,L11为0.3mm,L12为0.4mm,L13为1.8mm,L14为1.45mm,L15为0.34mm,L16为1.57mm,L17为0.44mm,W4和W6一样为0.2mm,W3为0.23mm,W5为0.36mm;第一层介质厚度为0.15mm,第二层介质厚度为0.3mm,第三层介质厚度为0.15mm,第四层介质厚度为0.1mm。导体层采用的是金属银,介质基板材料为陶瓷,相对介电常数Er为7.6,介质损耗正切tan为0.005,整个器件体积为3.2mm×2.8mm×0.7mm。 As shown in Figure 2, L1 is 0.4mm, L2 is 1012 mm, L4 is 0.65mm, L5 is 0.5mm, L7 is 0.6mm, L8 is 1.27mm, W1 is 0.1mm, and W2 is 0.1mm; as shown in Figure 3 and As shown in Figure 5, L10 is 0.154mm, L11 is 0.3mm, L12 is 0.4mm, L13 is 1.8mm, L14 is 1.45mm, L15 is 0.34mm, L16 is 1.57mm, L17 is 0.44mm, W4 and W6 are the same 0.2mm, W3 is 0.23mm, W5 is 0.36mm; the thickness of the first layer of dielectric is 0.15mm, the thickness of the second layer of dielectric is 0.3mm, the thickness of the third layer of dielectric is 0.15mm, and the thickness of the fourth layer of dielectric is 0.1mm. The conductor layer is made of metallic silver, the dielectric substrate material is ceramic, the relative permittivity Er is 7.6, the dielectric loss tangent tan is 0.005, and the volume of the whole device is 3.2mm×2.8mm×0.7mm.

该滤波器的响应结果如图6所示,图中包含两条曲线S(1,2)、S(2,1),由于滤波器结构的对称性,滤波器的另外两条响应曲线S(2,2)和S(1,2)分别与S(1,2)、S(2,1)相同,该滤波器工作于2.4Ghz,通带最小插入损耗为1.8dB,通带内回波损耗约为30dB,紧靠在通带上边频和通带下边频处各有一个传输零点,使得该滤波器的具有非常好的选择性,在6.4Ghz和9.1Ghz处有两个传输零点,有效地抑制了阻带,在2.6Ghz到9.4Ghz之间阻带全部抑制在-25dB以下,可见,该滤波器具有非常好的选择性和宽阻带抑制性,同时具有较好的带内特性。 The response result of the filter is shown in Figure 6, which contains two curves S(1,2) and S(2,1). Due to the symmetry of the filter structure, the other two response curves S( 2, 2) and S (1, 2) are the same as S (1, 2) and S (2, 1) respectively, the filter works at 2.4Ghz, the minimum insertion loss of the passband is 1.8dB, and the echo in the passband The loss is about 30dB, and there is a transmission zero point close to the upper side frequency of the passband and the lower side frequency of the passband, which makes the filter have very good selectivity. There are two transmission zero points at 6.4Ghz and 9.1Ghz, effectively The stop band is suppressed to a large extent, and the stop band is completely suppressed below -25dB between 2.6Ghz and 9.4Ghz. It can be seen that the filter has very good selectivity and wide stop band suppression, and has good in-band characteristics.

综上,本发明提供的基于磁电耦合抵消技术的宽阻带LTCC带通滤波器具有体积小,宽阻带,插损小的优异性能,可加工为贴片元件,易于与其他电路模块集成,可广泛应用于无线通讯系统的射频前端中。 In summary, the wide stopband LTCC bandpass filter based on the magnetoelectric coupling cancellation technology provided by the present invention has the excellent performance of small size, wide stopband, and small insertion loss, and can be processed into a chip component, which is easy to integrate with other circuit modules , can be widely used in the radio frequency front end of the wireless communication system.

以上所描述是实施例是本发明中的一个较好的实施例,并不用以限制本发明。基于本发明的实施例,本领域普通技术人员在没有做出创造性劳动的前提下,基于本发明所作的任何修改,等同替换,改进所获得的其他实施例,都属于本发明实施例的保护范围。 The embodiment described above is a preferred embodiment of the present invention, and is not intended to limit the present invention. Based on the embodiments of the present invention, any modifications, equivalent replacements, and other embodiments obtained by those skilled in the art without creative work based on the present invention all belong to the protection scope of the embodiments of the present invention .

Claims (4)

1. based on the wide stopband LTCC band pass filter of magneto-electric coupled cancellation technology, it is characterized in that comprising four layers of medium substrate and four layers of conductor layer, four layers of medium substrate are followed successively by first dielectric-slab (1), second dielectric-slab (2), the 3rd dielectric-slab (3) and the 4th dielectric-slab (4) from top to bottom, and described four layers of medium substrate are LTCC ceramic dielectric substrate; Described first conductor layer is printed on first medium substrate (1) upper surface, second conductor layer is printed on second medium substrate (2) upper surface, the 3rd conductor layer is printed on the 3rd medium substrate (3) upper surface, and the 4th conductor layer is printed on the 4th medium substrate (4) upper surface; The LTCC typography is adopted in described printing.
2. the wide stopband LTCC band pass filter based on magneto-electric coupled cancellation technology according to claim 1, described first conductor layer is made up of the identical feed structure of a pair of structure, this is the mirror image symmetry to the identical feed structure of structure, each feed structure comprises a feed paster (5), a CPW feed mouth (6) and a L type metal micro-strip line (7), L type metal micro-strip line (7) is connected feed paster (5) near a side of aforementioned mirror image symmetrical centre, and constituting source load coupling with the L type metal micro-strip line (7) of symmetrical centre opposite side, the source load is coupling in the filter passband left side and has produced a transmission zero; CPW feed mouth is connected to the 3rd conductor layer (9) by ground metallization via hole (11).
3. the wide stopband LTCC band pass filter based on magneto-electric coupled cancellation technology according to claim 1 is characterized in that being distributed with on second conductor layer and the 4th conductor layer two quarter-wave resonance devices; All some is positioned at second conductor layer to each quarter-wave resonance device, another part is positioned on the 4th conductor layer, these two parts link to each other by the second metallization via hole (13), metallization via hole (13) passes the perforate (14) that is positioned on the 3rd conductor layer, and metallization via hole (13) does not directly contact with the 3rd conductor layer; The short-circuit end of quarter-wave resonance device is positioned at second conductor layer and is connected to the 3rd conductor layer by the first metallization via hole (12); Described two quarter-wave resonance devices all are mirror image and are symmetrically distributed on second conductor layer and the 4th conductor layer, the quarter-wave resonance device part that is positioned on the same conductor layer produces magneto-electric coupled by the limit coupling, the coupling unit of quarter-wave resonance device on second conductor layer is the resonator short-circuit end, based on magnetic coupling; The coupling unit of quarter-wave resonance device on the 4th conductor layer is the resonator open end, based on electric coupling.
4. the wide stopband LTCC band pass filter based on magneto-electric coupled cancellation technology according to claim 3, described the 3rd conductor layer is metal floor (9), there are two perforates (14) to pass for described metallization via hole (13) on the 3rd conductor layer, and leave the gap between metallization via hole (13) and the metal floor.
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CN112242597A (en) * 2020-12-11 2021-01-19 成都频岢微电子有限公司 Miniaturized high-selectivity wide-stop-band-pass filter based on multi-layer PCB structure
CN112701431A (en) * 2020-12-15 2021-04-23 电子科技大学 Filter and wireless communication system
CN113131112B (en) * 2021-04-22 2021-09-28 北京邮电大学 Miniaturized band-pass LTCC filter with embedded SIR branches
CN113131112A (en) * 2021-04-22 2021-07-16 北京邮电大学 Miniaturized band-pass LTCC filter with embedded SIR branches
CN113555685A (en) * 2021-07-22 2021-10-26 维沃移动通信有限公司 Electronic equipment
CN114788087A (en) * 2021-09-23 2022-07-22 香港应用科技研究院有限公司 Multilayer Bandpass Filter
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CN117895200A (en) * 2024-03-11 2024-04-16 成都核心智慧科技有限公司 5G substrate integrated coaxial filter based on extraction pole resonator
CN117895200B (en) * 2024-03-11 2024-06-04 成都核心智慧科技有限公司 5G substrate integrated coaxial filter based on extraction pole resonator
CN117913486A (en) * 2024-03-19 2024-04-19 微网优联科技(成都)有限公司 Low-insertion-loss low-cost multi-zero miniaturized microstrip filter
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