CN103187458B - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN103187458B CN103187458B CN201110454266.XA CN201110454266A CN103187458B CN 103187458 B CN103187458 B CN 103187458B CN 201110454266 A CN201110454266 A CN 201110454266A CN 103187458 B CN103187458 B CN 103187458B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a kind of solar cell, this solar cell comprises silica-based sub-battery and the sub-battery of III-V compounds of group that lamination arranges, and wherein, the sub-battery of III-V compounds of group is than the more close light incident direction of silica-based sub-battery. Preferably battery should be, wherein the sub-battery of III-V compounds of group can be the Al that energy gap is greater than 2eV1-XGaXN material (wherein, X is between 0-1). The present invention also provides a kind of preparation method of this solar cell. Because the III-V compound material of broad stopband brings to Front, be positioned at the initial position of incident light, the blue light that absorbing wavelength is short and green glow, but ruddiness and infrared light that absorbing wavelength is not longer; Being positioned at like this bottom has compared with absorptive red light and infrared light better of the silicon materials of low energy gap.
Description
Technical field
The present invention relates to solar cell, relate in particular to the gang type with high electricity conversion(tandem) solar cell and preparation method thereof.
Background technology
Solar cell thinks that solid crystals structure is feature conventionally, described solid crystals structure theyBetween valence band and their conduct electricity subband, there is band gap. In the time that light is absorbed by material, occupyThe electronics of lower state is stimulated and passes band gap to higher energy state. For example,, when the electricity in semiconductor valence bandSon is during from the enough energy of the photonic absorption of solar radiation, and they can jump over band gap to more high-octane leadingBand. The electronics that is excited to higher energy state leaves the energy position or the hole that do not occupy. With in conduction bandFree electron is the same, and this hole can be mobile also thus as electric charge carrier between atom in lattice,And contribute to the electric conductivity of crystal. The most of photons that absorb in semiconductor produce this electron hole pair,This electron hole pair produces photoelectric current also and then produces the photovoltage being demonstrated by solar cell. Partly leadBody makes the space charge separating with electronics as the hole of electric charge carrier with generation doped with different materialsLayer (spacechargelayer). Once separate, the hole of these collections and electron charge carrier produceSpace charge, this space charge causes the voltage across interface as photovoltage. If these holes andElectric charge carrier allows to flow through external loading, and they form photoelectric current so.
In semiconductor, cross over band gap and have the potential energy difference of fixed amount. Jump over band gap extremely for to be excitedHigh energy conduction band for the electronics in low energy valence band, it must be conventionally absorb q.s from the photon absorbingEnergy, this energy value at least equals to cross over the potential energy difference of band gap. Semiconductor is less than energy to photon energyThe radiation of band gap is transparent. If electronics for example exceedes the threshold value of energy from the photonic absorption of higher-energyAmount, its band gap of can jumping over so. The energy absorbing exceedes the electronics needed threshold value of band gap of jumping overAmount, has produced the electronics of energy higher than most of other electronics in conduction band. Excess energy is finally with heatForm is scattered and disappeared. Final result is that the semi-conductive efficient light voltage of single band gap is limited to band gap. Therefore,In single semiconductor solar cell, in order to capture photon as much as possible from solar radiation spectrum, halfConductor must have little band gap, also can jump over by excitation electron even if make to have more low-energy photonBand gap. Because the use of little band gap material causes the photovoltage of device and power stage to reduce, instituteThere is restriction. In addition, produce as heat and lost excess energy from the photon of higher energy.
But, if semiconductor design is to have larger band gap to improve photovoltage and to reduce to be carried by heatFlow the energy loss that sub thermalization causes, having more low-energy photon can not be absorbed. Therefore,In the time of design unijunction solar cell, be necessary these Considerations of balance and optimize band gap, and as far as possibleDesign has the semiconductor of optimum band gap. Carry out in recent years much work, gone here and there folded by manufactureType or many knot (cascade) solar battery structures solve this problem, in these solar cells,Top battery has larger band gap and absorbs the photon of higher-energy, and passes through top compared with energy photonsShe enters portion electricity and has the bottom of less band gap or bottom battery to absorb lower energy emission. ThisA little band gaps from height to low, sort from top to bottom, to realize optics cascading (cascadingeffect).In principle, the sub-battery of stacking any amount in such a manner; But practical limit it has been generally acknowledged thatTwo or three. Due to every sub-battery general on the little photon wavelength band of effective switching energySolar energy is converted into electric energy, so multijunction solar cell can realize higher conversion efficiency. Manufacture thisThe technology of planting tandem cells is recorded in United States Patent (USP) 5,019,177, by reference its full content is incorporated toHerein.
Existing gang type or multijunction solar cell major part are by different silica-based sub-cell stacks shapesBecome, such as the common tandem solar electricity being formed by the sub-battery of non-crystalline silicon and the sub-cell stacks of microcrystal siliconPond, this class battery cost of manufacture is lower, but still lower to the conversion efficiency of light. On market, also there is high efficiencyTandem solar cells occur, for example United States Patent (USP) 5,019,177 announce by indium phosphide (InP)The tandem solar cells that the sub-battery of battery and phosphorus InGaAsP (GaInAsP) forms, but its material andManufacturing cost is too high, is difficult in civilian market large-scale promotion.
Therefore, expect to provide the solar cell that photoelectric transformation efficiency is high and cost of manufacture is lower.
Summary of the invention
The object of this invention is to provide the solar-electricity that a kind of photoelectric transformation efficiency is high and cost of manufacture is lowerPond.
The present invention also aims to provide a kind of preparation method of above-mentioned solar cell.
For achieving the above object, the invention provides a kind of solar cell, it is silica-based that it comprises that lamination arrangesSub-battery and the sub-battery of III-V compounds of group, the sub-battery of described III-V compounds of group is than described silica-based son electricityThe more close light incident direction in pond.
Optionally, described silica-based sub-battery, the sub-battery of described III-V compounds of group are p-n junction or p-i-nType connected structure.
Optionally, described silica-based sub-battery comprises the light of being made up of non-crystalline silicon, microcrystal silicon or polycrystalline silicon materialElectricity conversion layer.
Optionally, described non-crystalline silicon comprise amorphous silicon hydride (α-Si:H), hydrogenated amorphous silicon-carbon (α-SiC:H),Hydrogenated amorphous SiGe (α-SiGe:H) or hydrogenated amorphous silicon-carbon germanium (α-SiGeC:H).
Optionally, the sub-battery of described III-V compounds of group comprises by Al1-XGaXThe photoelectricity that N material is made turnsChange layer, wherein, 0≤X≤1.
Optionally, between described silica-based sub-battery and the sub-battery of described III-V compounds of group, being provided with conduction connectsConnect layer.
Optionally, described conduction articulamentum comprises N-type heavily doped layer and the P type heavily doped layer of stacked setting.
Optionally, the material of described N-type heavily doped layer, P type heavily doped layer is doped silicon.
Optionally, described conduction articulamentum comprise with layer arrange, and adjacent N-type heavily doped region and P typeHeavily doped region.
Optionally, the material of described N-type heavily doped region and described P type heavily doped region is doped silicon, instituteState the surface that N-type heavily doped region, P type heavily doped region are positioned at described silica-based sub-battery.
For achieving the above object, the present invention also provides a kind of preparation method of solar cell, and it comprises:
Substrate is provided;
Form silica-based sub-battery;
On described silica-based sub-battery, form the sub-battery of III-V compounds of group;
On the sub-battery of described III-V compounds of group, form TCO glass.
Optionally, described silica-based sub-battery is p-n junction or p-i-n type connected structure.
Optionally, the sub-battery of described III-V compounds of group comprises by Al1-XGaXThe photoelectricity that N material is made turnsChange layer, wherein, 0≤X≤1.
Optionally, form before the sub-battery of III-V compounds of group, on described silica-based sub-battery, form successively PThe heavily doped silicon layer of type and the heavily doped silicon layer of N-type.
Optionally, form before the sub-battery of III-V compounds of group, the top layer of described silica-based sub-battery is mixedAssorted, form adjacent N-type heavily doped region and P type heavily doped region.
Compared with prior art, the present invention has the following advantages:
Solar cell of the present invention is by the sub-battery of III-V compounds of group and the silicon that is positioned at bottom that are positioned at topBase battery composition, wherein the III-V compound material of broad stopband brings to Front, be positioned at incident light at the beginning ofBeginning position, the blue light that absorbing wavelength is short and green glow, but ruddiness and infrared light that absorbing wavelength is not longer.Being positioned at like this bottom has compared with absorptive red light and infrared light better of the silicon materials of low energy gap. Adopt wideForbidden band material is to make full use of the energy of blue light and green glow photon as the benefit of top absorbed layer,Also make bottom battery can absorb more ruddiness and infrared light simultaneously. If energy gap is too narrow, such asSilicon～1.12eV, although the blue photons of 3eV can be absorbed, wherein the energy of 2eV can becomeHeat energy loss, can not change into electric energy effectively.
Way difference in the past, the present invention adopts the N-type heavily doped layer (or district) of silicon and P type heavily dopedThe interface of diamicton (or district) composition replaces the junction interface, tunnel being made up of III-V compounds of group and silicon materials,Thereby the loss in reduction electric transmission.
Brief description of the drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, address on of the present inventionOther object, Characteristics and advantages will be more clear. Reference numeral instruction identical in whole accompanying drawings is identicalPart. Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on illustrating of the present inventionPurport.
Fig. 1 is the structural representation of solar cell of the present invention.
Fig. 2 is Al1-XGaXBeing with of the double-junction solar battery that the sub-battery of N and Si cell stacks formStructural representation.
Fig. 3 is the structural representation of first embodiment of the invention solar cell.
Fig. 4 is the structural representation of second embodiment of the invention solar cell.
Detailed description of the invention
As stated in the Background Art, existing unijunction, binode or multijunction solar cell, or opto-electronic conversionEfficiency is not high, otherwise manufacturing cost too high, be difficult to large-scale application on market.
For this point, the present invention has adopted a kind of knot of the double-junction solar battery with III-V family and silica-based combinationStructure, as shown in Figure 1, to ensure high photoelectric transformation efficiency and low manufacturing cost simultaneously. Please refer to Fig. 1Shown in, the sub-battery of III-V compounds of group with broad stopband is placed in the top layer of binode, be positioned at incident light at the beginning ofBeginning position, the blue light that absorbing wavelength is short and green glow, but ruddiness and infrared light that absorbing wavelength is not longer.Being positioned at like this bottom has compared with absorptive red light and infrared light better of the silicon materials of low energy gap. Adopt wideForbidden band material is to make full use of the energy of blue light and green glow photon as the benefit of top absorbed layer,Also make bottom battery can absorb more ruddiness and infrared light simultaneously. If energy gap is too narrow, such asSilicon～1.12eV, although the blue photons of 3eV can be absorbed, wherein the energy of 2eV can becomeHeat energy loss, can not change into electric energy effectively.
The sub-battery of III-V compounds of group here and the photoelectric conversion layer of silica-based sub-battery can be all p-n junctionOr p-i-n type connected structure. Here said p-n junction connected structure, had both comprised that p-type layer of material covers existedThe structure of N-shaped material layer, also comprises the structure of N-shaped layer of material covers at p-type material layer. Here saidP-i-n type connected structure, had both comprised the such laminated construction of the p-type material layer-i section bar bed of material-N-shaped material layer,Also comprise the laminated construction of the N-shaped material layer-i section bar bed of material-p-type material layer.
Here the material of the photoelectric conversion layer of the sub-battery of said III-V compounds of group can be aluminium arsenide(AlAs), Aluminum gallium arsenide (AlGaAs), GaAs (GaAs), indium phosphide (InP), Gallium indium arsenide(InGaAs) etc. Preferably, the sub-battery of III-V compounds of group here can be that energy gap is greater thanThe Al of 2eV1-XGaXN material (wherein, X is between 0-1).
Here the material of the photoelectric conversion layer of said silica-based sub-battery can be non-crystalline silicon, microcrystal silicon, listIn crystal silicon or polysilicon any one. Preferably, the material of the silica-based sub-battery is here non-crystalline silicon, instituteState non-crystalline silicon and comprise amorphous silicon hydride (α-Si:H), hydrogenated amorphous silicon-carbon (α-SiC:H), amorphous silicon hydrideGermanium (α-SiGe:H), hydrogenated amorphous silicon-carbon germanium (α-SiGeC:H) etc.
In fact, the power output of battery can be expressed as:
Pmax＝Voc×Isc×FF
Wherein, the open-circuit voltage that Voc is battery, the short circuit current that Isc is battery, FF is that fill factor, curve factor isDutycycle during for Pmax.
As shown from the above formula, in the situation that keeping output current constant, increasing Voc can be effectivelyIncrease the peak power of battery, thereby improve photoelectric transformation efficiency. Employing width of the present invention forbidden band twoJunction structure can increase open-circuit voltage effectively, thereby can reach the effect that improves photoelectric transformation efficiency.
As described herein, by utilizing the sub-battery of gang type of different materials to make solar cell effectRate can significantly increase, described different materials they valence band and their conduction band between have notSame band gap. Be used to form the compound of solar cell and the lattice paprmeter of alloy is known. WhenHave while combining these materials in the device of sub-battery of different materials, the lattice of different materials should haveIdentical lattice paprmeter or little lattice paprmeter difference. This is avoided forming and can making device in crystal structureThe defect that efficiency sharply reduces.
In any tandem cells device, must make electrical ties between sub-battery. Preferably, theseOhmic contact between battery should have minimum resistance, to make the electric power loss between battery extremely low.Exist two kinds of known methods for the manufacture of Ohmic contact between this battery, metal interconnected and tunnel knot (orTunnel diode). Metal interconnectedly provide low resistance, but they are difficult to manufacture, they cause multipleAssorted processing also can cause the loss greatly of unit efficiency. Therefore, there are multiple sub-batteries because can manufactureThe monolithic integrated device of (having tunnel knot between them), so conventionally preferred tunnel knot. But,Tunnel knot must meet multiple requirements, for example low resistance, high peak current density, low optical energy loss and logicalCross the crystalline phase capacitive of the Lattice Matching between top and bottom battery.
At present, tandem solar cells uses tunnel to tie to guarantee that efficient current flows through the 2-4 being connected in seriesIndividual solar cell. When in every sub-battery, produce currents match time, battery is worked the most efficiently.For electric current flows through battery to make folded increasing of sub-cell voltage series connection, between sub-primary cell, allow electronics skyThe compound knot in cave is useful.
Different from way in the past, the present invention does not directly utilize the sub-battery of III-V compounds of group and silica-based son electricityThe junction interface, tunnel forming between pond is as both conduction connecting structures, but the N-type of employing silicon is heavily dopedAssorted (N+) and P type heavy doping (P+) interface forms tunnel knot, thereby the damage in reduction electric transmissionConsumption. With Al1-XGaXThe double-junction solar battery that the sub-battery of N and Si cell stacks form is example, its energyBand structure as shown in Figure 2.
In the sub-battery of III-V compounds of group, the Al of P type doping1-XGaXN layer (hereinafter to be referred as P-AlGaN),I type Al1-XGaXThe Al of N layer (hereinafter to be referred as I-AlGaN) and N-type doping1-XGaX(the letter below of N layerClaim N-AlGaN) form and tie J1; In silica-based sub-battery, Si layer (, P-Si), the I type of the doping of P typeSi layer (, I-Si) forms knot J2 with the Si layer (, N-Si) of N-type doping. Photon knot J1 withIn knot J2, be absorbed rear formation electron hole pair, under the effect of built, the drift of Hui Xiang p type island region, hole,And the drift of electrons XiangNXing district. Hole in electronics and the knot J2 of knot in J1 can be by N+-Si and P+-SiThe interface of the tunnel knot forming is compound. The parameter that can tie J1 He Jie J2 district by adjusting makes to tie J1 and knotGeneration current in J2 region matches, and combined efficiency is 100%, does not namely have electronics and holeThereby the accumulation at interface forms potential barrier. The electric charge of accumulation can affect the distribution of built, makes the effect of batteryRate reduces.
For different materials, due to the difference of energy gap and electron affinity energy, the energy of conduction band and valence bandMay form natural potential barrier with difference, thereby affect the efficiency of transmission in electronics and space. And select suitableMaterial reduce this natural potential barrier and can greatly increase difficulty and the cost of technique, and not necessarilyCan get a desired effect and form efficient solar cell. And silica-based tunnel knot is a kind of maturationTechnique, ties needed heavy doping, the technical maturity of silicon and stable performance for forming tunnel. And III-VIf carrying out heavy doping, the material of family may bring the defect of material lattice. Due to Al1-XGaXN need to lead toCross extension and grow, carry out heavily doped technique in the starting stage of Material growth and can bring many defects,Thereby greatly reduce the efficiency of battery.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawingThe specific embodiment of the present invention is described in detail.
A lot of details are set forth in the following description so that fully understand the present invention. But thisBright can enforcement to be much different from alternate manner described here, those skilled in the art can be notRun counter in the situation of intension of the present invention and do similar popularization, therefore the present invention is not subject to following public concrete enforcementRestriction.
The first embodiment
As shown in Figure 3, it wraps the solar cell that first embodiment of the invention provides from top to bottom successivelyDraw together TCO (transparentconductingoxide, the transparent conductive oxide plated film) glass that is positioned at top layer50, P-AlGaN layer 46, I-AlGaN layer 44, N-AlGaN layer 42, N+(the N-type heavy doping of-Si layerSilicon layer) 35, P+-Si layer (P type heavy doping silicon layer) 33, P-Si layer 26, I-Si layer 24, N-Si layer 22And conductive layer 10. Wherein, P-AlGaN layer 46, I-AlGaN layer 44, N-AlGaN layer 42 have formedThe photoelectric conversion layer 40 of the sub-battery of III-V compounds of group, 22 groups, P-Si layer 26, I-Si layer 24, N-Si layerBecome the photoelectric conversion layer 20 of silica-based sub-battery, N+-Si layer 35 and P+-Si layer 33 has formed electric connectionThe tunnel knot of two sub-batteries. In the present embodiment, N+-Si layer 35 and P+In-Si layer 33, the doping of siliconConcentration is all greater than 1019/cm3。
The manufacturing process of above-mentioned solar cell is as follows:
Silicon base (not shown) is provided;
Form conductive layer 10;
Form N-Si layer 22, I-Si layer 24, P-Si layer 26;
Form the P as tunnel knot+-Si layer 33, N+-Si layer 35;
Form N-AlGaN layer 42, I-AlGaN layer 44, P-AlGaN layer 46;
Form TCO glass.
Wherein, P+-Si layer 33, N+-Si layer 35 can pass through Implantation, diffusion or extensional mode and form.
Illustrate a bit, what in the present embodiment, adopt is the mode shape to top layer growth from solar cell bottomBecome solar cell, also can form from contrary direction in other embodiments.
The second embodiment
Compared with the first embodiment, the main difference point of present embodiment is only the structure of tunnel knot,Other structure is basic identical, thereby has adopted identical label. Introduce second embodiment belowTunnel knot.
The tunnel knot that the second embodiment adopts is formed on same plane. As shown in Figure 4, N+-Si district 32,P+-Si district 34, N+-Si layer 36 has formed the tunnel knot that is communicated with two sub-batteries, and its entirety is positioned at P-Si layer26 surface, its doping can be passed through Implantation, diffusion or extensional mode and form. The benefit of doing like thisThere are 2 points: the one, technique is simple, and cost is low, and yield rate is high; The 2nd, avoid large-area heavily dopedAssorted and cause the defect of follow-up AlGaN extension. As previously mentioned, the defect of lattice can cause the efficiency of batteryReduce.
Although the present invention with preferred embodiment openly as above, it is not for limiting the present invention, appointsWhat those skilled in the art without departing from the spirit and scope of the present invention, can utilize above-mentioned announcementMethod and technology contents are made possible variation and amendment to technical solution of the present invention, therefore, every not de-From the content of technical solution of the present invention, that according to technical spirit of the present invention, above embodiment is done is anySimple modification, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (10)
1. a solar cell, is characterized in that, comprises silica-based sub-battery and III-V that lamination arrangesThe sub-battery of compounds of group, the sub-battery of described III-V compounds of group is than the more close light incident of described silica-based sub-batteryDirection;
Between described silica-based sub-battery and the sub-battery of described III-V compounds of group, be provided with conduction articulamentum;
Described conduction articulamentum comprise with layer arrange, and adjacent N-type heavily doped region and P type heavily doped region;
The material of described N-type heavily doped layer, P type heavily doped layer is doped silicon.
2. solar cell as claimed in claim 1, is characterized in that, described silica-based sub-battery, instituteStating the sub-battery of III-V compounds of group is p-n junction or p-i-n type connected structure.
3. solar cell as claimed in claim 1, is characterized in that, described silica-based sub-battery comprisesThe photoelectric conversion layer of being made by non-crystalline silicon, microcrystal silicon, monocrystalline silicon or polycrystalline silicon material.
4. solar cell as claimed in claim 3, is characterized in that, described non-crystalline silicon comprises hydrogenationNon-crystalline silicon, hydrogenated amorphous silicon-carbon, hydrogenated amorphous SiGe or hydrogenated amorphous silicon-carbon germanium.
5. solar cell as claimed in claim 1, is characterized in that, described III-V compounds of groupSub-battery comprises by Al1-XGaXThe photoelectric conversion layer that N material is made, wherein, 0≤X≤1.
6. solar cell as claimed in claim 1, is characterized in that, described N-type heavily doped region withThe material of described P type heavily doped region is doped silicon, described N-type heavily doped region, P type heavy doping positionIn the surface of described silica-based sub-battery.
7. a preparation method for solar cell, is characterized in that, comprising:
Substrate is provided;
Form silica-based sub-battery;
On described silica-based sub-battery, form the sub-battery of III-V compounds of group;
On the sub-battery of described III-V compounds of group, form TCO glass;
Form before the sub-battery of described III-V compounds of group, on described silica-based sub-battery, form successively conduction and connectConnect layer, described conduction articulamentum comprises with layer setting, also adjacent N-type heavily doped layer and the heavy doping of P typeLayer.
8. the preparation method of solar cell as claimed in claim 7, is characterized in that, described silica-basedSub-battery is p-n junction or p-i-n type connected structure.
9. the preparation method of solar cell as claimed in claim 8, is characterized in that, described III-VThe sub-battery of compounds of group comprises by Al1-XGaXThe photoelectric conversion layer that N material is made, wherein, 0≤X≤1.
10. the preparation method of the solar cell as described in claim 7 to 9 any one, its feature existsIn, form before the sub-battery of III-V compounds of group, adulterated in the top layer of described silica-based sub-battery, formAdjacent N-type heavily doped region and P type heavily doped region.
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| CN110534607A (en) * | 2018-05-25 | 2019-12-03 | 中国电子科技集团公司第十八研究所 | A GaInP/GaAs/μ c-Si: h three-junction laminated solar cell |
| CN113206164A (en) * | 2021-04-26 | 2021-08-03 | 宜兴市昱元能源装备技术开发有限公司 | Cast tandem multi-junction photovoltaic cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| CN101197398A (en) * | 2006-12-08 | 2008-06-11 | 海德威电子工业股份有限公司 | Tandem solar cell structure |
| CN101675527A (en) * | 2007-04-09 | 2010-03-17 | 加利福尼亚大学董事会 | Low resistance tunnel junctions for high efficiency tandem solar cells |
-
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| CN101197398A (en) * | 2006-12-08 | 2008-06-11 | 海德威电子工业股份有限公司 | Tandem solar cell structure |
| CN101675527A (en) * | 2007-04-09 | 2010-03-17 | 加利福尼亚大学董事会 | Low resistance tunnel junctions for high efficiency tandem solar cells |
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