CN103184435A - Heating device, heating method and semiconductor processing equipment - Google Patents
Heating device, heating method and semiconductor processing equipment Download PDFInfo
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- CN103184435A CN103184435A CN2011104486157A CN201110448615A CN103184435A CN 103184435 A CN103184435 A CN 103184435A CN 2011104486157 A CN2011104486157 A CN 2011104486157A CN 201110448615 A CN201110448615 A CN 201110448615A CN 103184435 A CN103184435 A CN 103184435A
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Abstract
The invention provides a heating device, a heating method, and semiconductor processing equipment. The heating device comprises an induction coil and a power source that are in connection. The induction coil includes over three sub-coils that are longitudinally coaxial and arranged at intervals. A power regulator for regulating the output power of the sub-coils is disposed between the induction coil and the power source so as to regulate current at the ends and middle section of the induction coil. The heating device can make the magnetic lines of force at the ends and middle section of the induction coil distributed uniformly, so that the processed workpieces at the induction coil ends and middle section can be heated evenly. Thus, energy consumption of the heating device is reduced, the processing efficiency is improved, also the space of a reaction chamber can be fully utilized, and the processing efficiency of the semiconductor processing equipment is improved.
Description
Technical field
The invention belongs to the plasma processing device field, relate to a kind of heating unit, heating means and semiconductor processing equipment.
Background technology
MOCVD (organometallics chemical vapour deposition) technology is to utilize organometallics to carry out a kind of compound semiconductor vapor phase epitaxy technique that metal transports, it can accurately control thickness and the component of epitaxial film on nanoscale, and be suitable for producing in batches, therefore become the main means of production of current photoelectric device.
When utilizing workpiece to be machined such as MOCVD apparatus processing photoelectric device, the temperature homogeneity that is placed on the workpiece to be machined of different zones in the reaction chamber has and significant effects for the processing quality of MOCVD equipment.The mode of traditional heating workpiece to be machined has two kinds:
The first, the subregion type of heating.Adopt the showerhead configuration reaction chamber, and resistance wire or the resistor disc that will be arranged on different zones in the reaction chamber carry out subregion, the resistance wire of different zones or the heating power of resistor disc in the control reaction chamber are so that the workpiece to be machined thermally equivalent.
The second, induction heating mode.Adopt planetary structural response chamber, the outside at reaction chamber is provided with ruhmkorff coil, in reaction chamber, be provided with the big pallet and the little pallet that are formed by machining graphite, and when big pallet rotates, little pallet can be with respect to big pallet rotation, workpieces to be machined such as substrate are placed on the little pallet, can make the workpiece to be machined thermally equivalent that is placed on the little pallet by the revolution of big pallet and the rotation of little pallet.
Though above-mentioned two kinds of type of heating can satisfy the processing request of the MOCVD equipment that is provided with the single mount dish, yet the production capacity of the MOCVD equipment of single mount dish is lower, has restricted the processing potential of MOCVD equipment.For this reason, person skilled has been developed many pallets MOCVD equipment of vertical structure.
Fig. 1 is the part-structure figure of many pallets MOCVD equipment of vertical structure.See also Fig. 1, MOCVD equipment comprises reaction chamber 1, is provided with a plurality of pallets 2 for the carrying workpiece to be machined in the inside of reaction chamber 1, and a plurality of pallets 2 are arranged at vertical direction and arranged, and pallet 2 is to utilize graphite to make.Be provided with ruhmkorff coil 3 in the outside of reaction chamber 1, ruhmkorff coil 3 is connected with the midfrequent AC power supply.The alternating magnetic field that ruhmkorff coil 3 produces can make the pallet 2 inner eddy currents that produce, and eddy current makes pallet 2 heatings, thereby heats the workpiece to be machined that is placed on pallet 2 surfaces indirectly.
In actual application, because ruhmkorff coil 3 self characteristics, the magnetic line of force that is ruhmkorff coil 3 middle parts is densely distributed and even, and the distribution of the magnetic line of force at ruhmkorff coil 3 two ends is sparse and inhomogeneous, the temperature of workpiece to be machined that causes being positioned at reaction chamber 1 two ends (near the end of ruhmkorff coil 3) is on the low side, and the homogeneity of temperature is relatively poor.Uneven and to the influence of processing quality for fear of Yin Wendu, accompany section 4 in the setting of the two ends of reaction chamber 1, namely do not placing workpiece to be machined near on the pallet 2 at reaction chamber 1 two ends, this must waste the space of reaction chamber 1, not only waste energy, and reduced production efficiency.
Summary of the invention
For one of addressing the above problem at least, the invention provides a kind of heating unit, heating means and semiconductor processing equipment, it can make the end of ruhmkorff coil and the magnetic field at middle part evenly distribute, thereby make the workpiece to be machined that is positioned at ruhmkorff coil end and middle part can thermally equivalent, and then improve the working (machining) efficiency of semiconductor processing equipment.
The technical scheme that adopts that solves the problems of the technologies described above provides a kind of heating unit, comprise ruhmkorff coil and the power source that is connected with described ruhmkorff coil, described ruhmkorff coil comprises vertical subcoil coaxial and that place at interval more than three, between described ruhmkorff coil and described power source, be provided with for the power regulator of regulating described subcoil output rating, with the end of regulating described ruhmkorff coil and the electric current at middle part.
Wherein, described power regulator comprises power regulation network, drive unit and controller, and wherein, described controller is used for providing the power regulation amount of described subcoil; Described drive unit provides corresponding motivating force according to described power regulation amount; Described power regulation network is regulated the power of described subcoil.
Wherein, described power regulation network comprises two output terminals, and one of them output terminal is connected with the described subcoil that is positioned at described ruhmkorff coil middle part, and another output terminal is connected with the described subcoil that is positioned at described ruhmkorff coil end.
Wherein, described power regulation network comprises the output terminal corresponding with described subcoil quantity, and each described output terminal is connected with a described subcoil respectively, and described power regulation network is controlled separately described subcoil.
Wherein, described power regulation network is made up of variable capacity or variable inductance.
The present invention also provides a kind of heating means, may further comprise the steps: three above subcoils are vertically put together at coaxial and interval, thereby obtain ruhmkorff coil; Regulate the output rating of described subcoil, with the end of regulating described ruhmkorff coil and the electric current at middle part.
Wherein, the step of regulating the output rating of described subcoil comprises: the power regulation amount of obtaining subcoil described in the ruhmkorff coil; The power regulation amount of described subcoil is transferred to drive unit; Described drive unit is regulated the output rating of described subcoil according to the power regulation amount of described subcoil.
Wherein, the power regulation amount of described subcoil obtains in the following manner: the Current Temperatures that obtains described subcoil corresponding position; Obtain the power regulation amount of this subcoil according to described Current Temperatures.
Wherein, realize power regulation to described subcoil by variable capacity or variable inductance.
The present invention also provides a kind of semiconductor processing equipment, comprise reaction chamber, be provided with the pallet for the carrying workpiece to be machined in described reaction chamber, be provided with heating unit in the outside of reaction chamber, described heating unit adopts described heating unit provided by the invention.
Wherein, semiconductor processing equipment comprises temperature sensor and monitoring device, and described temperature sensor is used for the temperature of monitoring workpiece to be machined; The input terminus of described monitoring device is connected with described temperature sensor, the output terminal of described monitoring device is connected with described controller, described monitoring device is used for sending the power regulation instruction according to the monitor value of described temperature sensor to described controller, and described controller obtains the power regulation amount of described subcoil according to described power regulation instruction.
The present invention has following beneficial effect:
Heating unit provided by the invention is made up of vertical subcoil coaxial and that place at interval more than three, output rating by the regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute, thereby can make the workpiece to be machined that is positioned at ruhmkorff coil end and middle part can thermally equivalent, and then the energy consumption of reduction heating unit, the heating efficiency of raising heating unit.
Heating means provided by the invention are that three above subcoils are vertically arranged the formation ruhmkorff coil in coaxial and interval, output rating by the regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute then, thereby can make the workpiece to be machined that is positioned at ruhmkorff coil end and middle part can thermally equivalent, and then the energy consumption of reduction heating unit, the working (machining) efficiency of raising heating unit.
Similarly, in the semiconductor processing equipment provided by the invention, the heating unit that is used for the heating workpiece to be machined is made up of vertical subcoil coaxial and that arrange at interval more than three, the output rating of regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute, thereby make the workpiece to be machined thermally equivalent that is positioned at ruhmkorff coil end and middle part, this not only can reduce the energy consumption of heating unit, improve its working (machining) efficiency, and can take full advantage of the space of reaction chamber, improve the working (machining) efficiency of semiconductor processing equipment.
Description of drawings
Fig. 1 is the part-structure figure of many pallets MOCVD equipment of vertical structure;
Fig. 2 is ruhmkorff coil and the magnetic line of force distribution plan of present embodiment heating unit;
Fig. 3 is the structured flowchart of present embodiment heating unit;
Fig. 4 is the structured flowchart of the another kind of heating unit of present embodiment;
Fig. 5 is the schema of present embodiment heating means;
Fig. 6 is the schema of the power regulation amount of acquisition subcoil;
Fig. 7 is the structure diagram of present embodiment semiconductor processing equipment.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing heating unit provided by the invention, heating means and semiconductor processing equipment are described in detail.
Fig. 2 is ruhmkorff coil and the magnetic line of force distribution plan of present embodiment heating unit.Fig. 3 is the structured flowchart of heating unit.See also Fig. 2 and Fig. 3, the heating unit that present embodiment provides comprises ruhmkorff coil 3 and the power source 5 that is connected with ruhmkorff coil 3, and ruhmkorff coil 3 comprises three vertical subcoils 31 coaxial and that place at interval.Between ruhmkorff coil 3 and power source 5, be provided with the power regulator 6 for regulon coil 31 output ratings, regulate the end of ruhmkorff coil 3 and the electric current at middle part by power regulator 6, thereby the magnetic line of force of ruhmkorff coil is evenly distributed.
In the present embodiment, power regulation network 61 is provided with two output terminals, wherein, the first output terminal 61a is connected with the 3rd subcoil 31c with the first subcoil 31a that is positioned at ruhmkorff coil 3 two ends, and the second output terminal 61b is connected with the second subcoil 31b that is positioned at the ruhmkorff coil middle part.Like this, power regulation network 61 can be regulated the second subcoil 31b and the first subcoil 31a/ the 3rd subcoil 31c respectively, namely respectively the received current of the subcoil 31 at the two ends that are positioned at ruhmkorff coil 3 and middle part is regulated, so that the magnetic induction density at the end of ruhmkorff coil 3 and middle part evenly distributes.As shown in Figure 2, along on its axis direction, the end of ruhmkorff coil 3 and the magnetic line of force at middle part are evenly distributed in the inside of ruhmkorff coil 3.
Need to prove that present embodiment power regulation network 61 is provided with two output terminals, but the present invention is not limited thereto.Power regulation network 61 also can arrange the output terminal identical with subcoil 31 quantity, and each output terminal is connected with a subcoil 31 respectively, and correspondingly, 61 pairs of subcoils 31 of power regulation network are regulated respectively, as shown in Figure 4.
In the present embodiment, power regulation network 61 can be the device that variable capacity or variable inductance etc. can be used for regulon coil output rating.Drive unit 62 can be propulsion sources such as motor.
Need to prove that in the present embodiment, though ruhmkorff coil 3 is provided with three subcoils 31, the present invention is not limited thereto, ruhmkorff coil 3 can be provided with the subcoil 31 of three above any amount, as four, five.Because the magnetic field of ruhmkorff coil has symmetry at its axial direction due, therefore, ruhmkorff coil 3 preferably arranges the odd number subcoil.Can regulate simultaneously the subcoil of position symmetry like this, can reduce the output terminal of power regulation network, thereby reduce the line that connects power regulation network and subcoil, and then simplify the structure of heating unit, reduce cost.
The heating unit that present embodiment provides is made up of vertical subcoil coaxial and that arrange at interval more than three, output rating by the regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute, thereby make the workpiece to be machined that is positioned at ruhmkorff coil end and middle part can thermally equivalent, and then can reduce the energy consumption of heating unit, improve the efficient of heating unit.
Present embodiment also provides a kind of heating means, and Fig. 5 is the schema of present embodiment heating means.See also Fig. 5, heating means may further comprise the steps:
Step s10 with the vertically coaxial and setting at interval of three above subcoils, thereby obtains ruhmkorff coil.
With the vertically coaxial and setting at interval of three above subcoils, and make its medullary ray on same straight line, thereby obtain ruhmkorff coil 3.Certainly, present embodiment ruhmkorff coil 3 can be provided with the subcoil 31 of three above any amount, as four, five.
Step s20, the output rating of regulon coil is with the end of regulating described ruhmkorff coil and the electric current at middle part.
In step s20, at first to obtain the power regulation amount of subcoil, then the power of regulon coil as required.
Fig. 6 is the schema of the power regulation amount of acquisition subcoil.See also Fig. 6, the power regulation amount of subcoil is to obtain according to following steps:
Step s21, the power regulation amount of acquisition subcoil.
In step s21, at first be placed on the temperature of the workpiece to be machined of ruhmkorff coil different positions by measurement, the ruhmkorff coil different positions mainly refers to the different positions on the ruhmkorff coil axial direction due here.And then obtain the power regulation amount of subcoil according to Current Temperatures.
Step s22 transfers to drive unit with the power regulation amount of described subcoil.
In step s 22, the power regulation amount of the subcoil that will be obtained by step s21 transfers to drive unit, and the power of regulon coil power is provided by drive unit.Drive unit can be propulsion sources such as motor.
Step s23, described drive unit regulate the output rating of described subcoil according to the power regulation amount of described subcoil.
In step s23, the power of subcoil is to regulate by variable capacity or variable inductance, drive unit provides power for regulating variable capacity or variable inductance, and regulate variable capacity or variable inductance according to the power regulation amount of subcoil, with regulon coil output rating, thereby reach the purpose of the electric current at the end of regulating described ruhmkorff coil and middle part.
The heating means that present embodiment provides are that three above subcoils are vertically arranged the formation ruhmkorff coil in coaxial and interval, output rating by the regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute then, thereby can make the workpiece to be machined that is positioned at ruhmkorff coil end and middle part can thermally equivalent, and then the energy consumption of reduction heating unit, the working (machining) efficiency of raising heating unit.
Present embodiment also provides a kind of semiconductor processing equipment.Fig. 7 is the structure diagram of present embodiment semiconductor processing equipment.See also Fig. 7, semiconductor processing equipment comprises reaction chamber 1, is provided with heating unit in the outside of reaction chamber 1, the heating unit that this heating unit adopts present embodiment to provide.And ruhmkorff coil 3 is along the axial array setting of reaction chamber 1.Be provided with a plurality of pallets 2 for the carrying workpiece to be machined in the inside of reaction chamber 1, a plurality of pallets 2 are arranged along the axial direction due of reaction chamber 1 and are arranged.By the output rating of regulon coil, the magnetic induction density at ruhmkorff coil 3 ends and middle part is evenly distributed, thereby makes the temperature of the workpiece to be machined that is positioned at ruhmkorff coil 3 ends and middle part even.Therefore in reaction chamber, need not to arrange again and accompany the section, thereby take full advantage of the space of reaction chamber, and then can improve the working (machining) efficiency of semiconductor processing equipment.And, can regulate owing to be positioned at the output rating of the subcoil of ruhmkorff coil end, can also further reduce the energy consumption of heating unit, improve the efficient of heating unit.
In the present embodiment, semiconductor processing equipment also comprises monitoring device 7 and temperature sensor 8, wherein, temperature sensor 8 can arrange a plurality of, be placed on the different zones of reaction chamber 1 respectively, with the temperature of different zones in the monitoring reaction chamber 1, namely monitor in the ruhmkorff coil 3 temperature with different subcoils 31 corresponding zones.The input terminus of monitoring device 7 is connected with temperature sensor 8, and the output terminal of monitoring device 7 is connected with controller 63.Monitoring device 7 sends the temperature regulation instruction according to the temperature value that temperature sensor 8 monitors to controller 63.Controller 63 is determined the power regulation amount of corresponding subcoil 31 according to the temperature regulation instruction of monitoring device 7.
Be appreciated that present embodiment is the temperature by different zones in the reaction chamber 1 of temperature sensor 8 acquisitions, thereby obtain the power regulation amount of subcoil 31 indirectly, but the present invention is not limited thereto.The present invention also can directly measure the magnetic induction density of different zones in the reaction chamber 1 by the magnetic flux density measurement instrument, namely obtain the magnetic induction density at different positions place in the ruhmkorff coil 3, and directly obtain the power regulation amount of subcoil 31 according to the magnetic induction density value.
In the semiconductor processing equipment that present embodiment provides, the heating unit that is used for the heating workpiece to be machined is made up of vertical subcoil coaxial and that arrange at interval more than three, the output rating of regulon coil can make the end of ruhmkorff coil and the magnetic line of force at middle part evenly distribute, thereby make the workpiece to be machined thermally equivalent that is positioned at ruhmkorff coil end and middle part, this not only can reduce the energy consumption of heating unit, improve its working (machining) efficiency, and can take full advantage of the space of reaction chamber, enhance productivity.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (11)
1. heating unit, comprise ruhmkorff coil and the power source that is connected with described ruhmkorff coil, it is characterized in that, described ruhmkorff coil comprises vertical subcoil coaxial and that place at interval more than three, between described ruhmkorff coil and described power source, be provided with for the power regulator of regulating described subcoil output rating, with the end of regulating described ruhmkorff coil and the electric current at middle part.
2. according to the described heating unit of claim 1, it is characterized in that described power regulator comprises power regulation network, drive unit and controller, wherein, described controller is used for providing the power regulation amount of described subcoil; Described drive unit provides corresponding motivating force according to described power regulation amount; Described power regulation network is regulated the power of described subcoil.
3. according to the described heating unit of claim 2, it is characterized in that, described power regulation network comprises two output terminals, and one of them output terminal is connected with the described subcoil that is positioned at described ruhmkorff coil middle part, and another output terminal is connected with the described subcoil that is positioned at described ruhmkorff coil end.
4. according to the described heating unit of claim 2, it is characterized in that, described power regulation network comprises the output terminal corresponding with described subcoil quantity, and each described output terminal is connected with a described subcoil respectively, and described power regulation network is controlled separately described subcoil.
5. according to any described heating unit of claim 2-4, it is characterized in that described power regulation network is made up of variable capacity or variable inductance.
6. heating means is characterized in that, may further comprise the steps:
Three above subcoils are vertically put together at coaxial and interval, thereby obtain ruhmkorff coil;
Regulate the output rating of described subcoil, with the end of regulating described ruhmkorff coil and the electric current at middle part.
7. according to the described heating means of claim 6, it is characterized in that the step of regulating the output rating of described subcoil comprises:
Obtain the power regulation amount of subcoil described in the ruhmkorff coil;
The power regulation amount of described subcoil is transferred to drive unit;
Described drive unit is regulated the output rating of described subcoil according to the power regulation amount of described subcoil.
8. according to the described heating means of claim 7, it is characterized in that the power regulation amount of described subcoil obtains in the following manner:
Obtain the Current Temperatures of described subcoil corresponding position;
Obtain the power regulation amount of this subcoil according to described Current Temperatures.
9. according to any described heating means of claim 6-8, it is characterized in that, realize power regulation to described subcoil by variable capacity or variable inductance.
10. semiconductor processing equipment, comprise reaction chamber, in described reaction chamber, be provided with the pallet for the carrying workpiece to be machined, be provided with heating unit in the outside of reaction chamber, it is characterized in that described heating unit adopts any described heating unit of claim 1-5.
11. semiconductor processing equipment according to claim 10 is characterized in that, comprises temperature sensor and monitoring device, described temperature sensor is used for the temperature of monitoring workpiece to be machined; The input terminus of described monitoring device is connected with described temperature sensor, the output terminal of described monitoring device is connected with described controller, described monitoring device is used for sending the power regulation instruction according to the monitor value of described temperature sensor to described controller, and described controller obtains the power regulation amount of described subcoil according to described power regulation instruction.
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| CN2011104486157A CN103184435A (en) | 2011-12-27 | 2011-12-27 | Heating device, heating method and semiconductor processing equipment |
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| CN2011104486157A CN103184435A (en) | 2011-12-27 | 2011-12-27 | Heating device, heating method and semiconductor processing equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109688651A (en) * | 2018-12-27 | 2019-04-26 | 东营源纳合金科技有限公司 | A kind of irregular alloy blank heating device and its heating means |
| CN114521035A (en) * | 2020-11-18 | 2022-05-20 | 中国科学院微电子研究所 | Direct induction heating device and heating method for wafer |
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| CN109688651A (en) * | 2018-12-27 | 2019-04-26 | 东营源纳合金科技有限公司 | A kind of irregular alloy blank heating device and its heating means |
| CN114521035A (en) * | 2020-11-18 | 2022-05-20 | 中国科学院微电子研究所 | Direct induction heating device and heating method for wafer |
| CN114521035B (en) * | 2020-11-18 | 2024-04-16 | 中国科学院微电子研究所 | Direct induction heating device and heating method for wafer |
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Application publication date: 20130703 |