[go: up one dir, main page]

CN103178194B - A kind of large power white light LED encapsulating structure and preparation method thereof - Google Patents

A kind of large power white light LED encapsulating structure and preparation method thereof Download PDF

Info

Publication number
CN103178194B
CN103178194B CN201110438682.0A CN201110438682A CN103178194B CN 103178194 B CN103178194 B CN 103178194B CN 201110438682 A CN201110438682 A CN 201110438682A CN 103178194 B CN103178194 B CN 103178194B
Authority
CN
China
Prior art keywords
fluorescent glue
led chip
blue led
fluorescent
glue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110438682.0A
Other languages
Chinese (zh)
Other versions
CN103178194A (en
Inventor
于峰
安建春
鲍海玲
赵霞炎
张成山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZAOZHUANG KESHUN DIGITAL Co.,Ltd.
Original Assignee
Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Inspur Huaguang Optoelectronics Co Ltd filed Critical Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority to CN201110438682.0A priority Critical patent/CN103178194B/en
Publication of CN103178194A publication Critical patent/CN103178194A/en
Application granted granted Critical
Publication of CN103178194B publication Critical patent/CN103178194B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10W72/0198
    • H10W72/01515
    • H10W72/075
    • H10W90/756

Landscapes

  • Led Device Packages (AREA)

Abstract

本发明提供一种大功率白光LED封装结构,通过第一次旋转涂覆,在LED芯片上表面及侧壁上涂覆一层由小颗粒荧光粉混合而成的内层荧光胶,烘干后,再利用自动点胶机喷点,在内层荧光胶上表面、LED芯片上方对应的局部位置涂覆一层由超大颗粒荧光粉混合而成的外层荧光胶。本发明利用外层荧光胶不易浸润已烘干的内层荧光胶的特性,使得外层荧光胶只在LED芯片上方正对应的局部位置形成一凸包。本发明无需掺入扩散剂等即可使用超大颗粒荧光粉,不但很大程度的提高了光效、而且避免荧光粉大量沉淀在LED芯片侧边位置而产生黄圈现象的技术不足。

The invention provides a packaging structure of high-power white light LED. Through the first spin coating, a layer of inner fluorescent glue mixed with small particle fluorescent powder is coated on the upper surface and side wall of the LED chip, and after drying , and then use the automatic dispensing machine to spray dots, and apply a layer of outer fluorescent glue mixed with super-large particle phosphor powder on the upper surface of the inner fluorescent glue and the corresponding local position above the LED chip. The present invention makes use of the property that the outer layer of fluorescent glue is not easy to infiltrate the dried inner layer of fluorescent glue, so that the outer layer of fluorescent glue forms a convex hull only at the corresponding local position above the LED chip. The present invention can use ultra-large particle phosphor without adding diffusing agent, etc., which not only improves the light efficiency to a great extent, but also prevents the phosphor powder from being deposited on the side of the LED chip to produce a yellow circle phenomenon.

Description

一种大功率白光LED封装结构及其制备方法A high-power white light LED packaging structure and preparation method thereof

技术领域 technical field

本发明涉及一种大功率白光LED封装结构及其制备方法,属于半导体发光器件制造技术领域。The invention relates to a high-power white light LED packaging structure and a preparation method thereof, belonging to the technical field of semiconductor light emitting device manufacturing.

背景技术 Background technique

随着LED外延材料和芯片水平的不断提高,白光LED以体积小、寿命长、绿色环保,并能满足各种恶劣环境要求的优点而大获发展,而功率型白光LED已成为重要的固体照明光源之一,其封装技术也得到了前所未有的发展。但是功率型白光LED的封装仍然存在诸多问题,首要的是发光效率仍旧不高,其次是发射光谱不均匀。如蓝光芯片经激发相应波长的荧光粉后,因荧光粉颗粒沉淀等因素造成的混光不好而存在黄圈、蓝圈等现象。功率型白光LED一般采用封装较大颗粒的荧光粉激发方式获得,通常需要掺入扩散剂以防止荧光粉发生沉淀、获得较好的光谱,但是扩散剂的掺入通常会严重影响光通量的大小,使得光效急剧下降。With the continuous improvement of LED epitaxial materials and chip levels, white LEDs have achieved great development due to their advantages of small size, long life, green environmental protection, and being able to meet the requirements of various harsh environments, and power white LEDs have become an important solid-state lighting. One of the light sources, its packaging technology has also been unprecedentedly developed. However, there are still many problems in the packaging of power-type white light LEDs. The first is that the luminous efficiency is still not high, and the second is that the emission spectrum is not uniform. For example, after the blue light chip excites the phosphor powder of the corresponding wavelength, there are yellow circles and blue circles due to poor light mixing caused by factors such as phosphor particle precipitation. Power-type white light LEDs are generally obtained by encapsulating larger particle phosphor powder excitation methods, and usually need to be mixed with a diffusing agent to prevent precipitation of the phosphor powder and obtain a better spectrum, but the incorporation of diffusing agents usually seriously affects the size of the luminous flux. Makes the light efficiency drop sharply.

中国专利CN101404317A公开一种大功率白光LED封装方法,将LED晶片固晶在基座内、烘烤焊线后,在基座内点透明硅胶,使得透明硅胶覆盖LED晶片,然后用透镜盖住整个基座,再从透镜边缘的侧耳小孔处向透镜与基座粘合形成的空腔内注满荧光胶。最终提高了LED光色的一致性,但相比其他技术专利,该专利对提高光效效果不明显。Chinese patent CN101404317A discloses a high-power white LED packaging method. After the LED chip is solidified in the base and the wire is baked, transparent silica gel is placed in the base so that the transparent silica gel covers the LED chip, and then the entire LED chip is covered with a lens. The base, and then fill the cavity formed by bonding the lens and the base from the small hole of the side ear on the edge of the lens with fluorescent glue. Finally, the consistency of LED light color is improved, but compared with other technical patents, this patent has no obvious effect on improving light efficiency.

中国专利CN101369623A提供一种LED芯片上涂敷荧光粉的工艺,将荧光粉和胶水按照一定比例混合后,经多次涂敷烘烤固化,直至碗杯中的胶水和荧光粉混合物固化后的液面与碗杯上边缘平齐,无凹痕出现。有效解决荧光粉一次涂敷固化中的荧光粉沉淀和聚集现象。中国专利CN101714598A公开了一种白光LED封装过程中荧光粉分层沉淀的方法,将添加剂、黄色荧光粉、硅胶按一定比例均匀混合做脱泡处理,将该材料填充到白光LED大功率支架碗杯内,保持2小时后进行分段烘烤,经70℃、90℃、110℃,再到150℃分别保持1~2小时,制成白光LED成品。该发明特意采用分层沉淀的方式,使得荧光粉沉淀均匀,有效改善产品一致性差的问题。将荧光粉经多次涂覆烘烤、或分段进行烘烤一定程度上能够起到改善光圈、增强产品均匀性的作用,但同时常常会引入荧光粉分层现象,仍不能获得高光效、高均匀性的白光LED。Chinese patent CN101369623A provides a process for coating fluorescent powder on LED chips. After mixing the fluorescent powder and glue according to a certain ratio, it is baked and cured through multiple coatings until the liquid in the bowl and cup is cured. The surface is flush with the upper edge of the bowl and there are no dents. Effectively solve the phenomenon of phosphor powder precipitation and aggregation during one-time coating and curing of phosphor powder. Chinese patent CN101714598A discloses a method for layering and precipitating fluorescent powder in the packaging process of white light LEDs. Additives, yellow fluorescent powder, and silica gel are evenly mixed in a certain proportion for degassing treatment, and the material is filled into white LED high-power bracket bowl cups. After keeping it for 2 hours, bake it in sections, and keep it at 70°C, 90°C, 110°C, and then 150°C for 1 to 2 hours respectively to make white LED products. The invention intentionally adopts the method of layered precipitation, so that the fluorescent powder can be deposited uniformly, and the problem of poor product consistency can be effectively improved. Baking the phosphor powder through multiple coatings or baking in sections can improve the aperture and enhance the uniformity of the product to a certain extent, but at the same time it often introduces layering of the phosphor powder, and still cannot obtain high light efficiency and High uniformity white LED.

中国专利CN101661987A公开了一种白光LED封装结构及其封装方法,其方法是先在LED芯片上涂覆有隔热透明材料层,隔热透明材料层上再涂覆有荧光粉层,重点关注大功率白光LED的散热问题,通过在芯片表面先涂覆一层隔热透明材料层起到隔热的作用。形成的透明材料层和荧光粉层的结构是透镜结构,或是在荧光粉层上设置一透镜结构。其荧光粉层的结构为:先与隔热透明材料层形成接触的是一层红色荧光粉层,再在红色荧光粉层外侧涂覆一层YAG荧光粉层,这样可以得到显色质量稳定的大功率白光LED。Chinese patent CN101661987A discloses a white LED packaging structure and its packaging method. The method is to first coat the LED chip with a heat-insulating transparent material layer, and then coat the heat-insulating transparent material layer with a phosphor layer. For the heat dissipation problem of power white light LED, a layer of heat-insulating transparent material layer is first coated on the chip surface to play the role of heat insulation. The structure of the formed transparent material layer and phosphor layer is a lens structure, or a lens structure is arranged on the phosphor layer. The structure of the phosphor layer is as follows: a layer of red phosphor layer is first in contact with the heat-insulating transparent material layer, and then a layer of YAG phosphor layer is coated on the outside of the red phosphor layer, so that a stable color rendering quality can be obtained. High power white LED.

中国专利CN102185087A公开一种大功率LED封装结构,其结构中采用一种大颗粒混合小颗粒荧光粉,使涂覆的荧光胶大于芯片侧边位置,形成与所盖的透镜弧度一致的弧形。其涂覆的荧光胶是在大颗粒中混入小颗粒,大、小颗粒的半径、用量各满足一定的比例关系。大颗粒中掺入小颗粒能起到一定的改善光色质量的作用,但是由于一次完成涂覆,涂覆高度大于芯片侧边位置,这样就使得芯片侧边仍然沉积有大量荧光粉,避免不了黄圈现象的再出现。Chinese patent CN102185087A discloses a high-power LED packaging structure, which uses a large particle mixed with small particle phosphor, so that the coated fluorescent glue is larger than the side of the chip, forming an arc consistent with the arc of the covered lens. The coated fluorescent glue is mixed with small particles in large particles, and the radius and dosage of the large and small particles meet a certain proportional relationship. Adding small particles into large particles can improve the quality of light and color to a certain extent, but because the coating is completed at one time, the coating height is greater than the side of the chip, so that a large amount of phosphor is still deposited on the side of the chip, which cannot be avoided. The reappearance of the yellow circle phenomenon.

发明内容 Contents of the invention

发明概述:Summary of the invention:

针对现有技术的不足,本发明提供一种大功率白光LED封装结构,通过第一次旋转涂覆,在LED芯片上表面及侧壁上涂覆一层由小颗粒荧光粉混合而成的内层荧光胶,烘干后,再利用自动点胶机喷点,在内层荧光胶上表面、LED芯片上方对应的局部位置涂覆一层由超大颗粒荧光粉混合而成的外层荧光胶。本发明利用外层荧光胶不易浸润已烘干的内层荧光胶的特性,使得外层荧光胶只在LED芯片上方正对应的局部位置形成一凸包。本发明无需掺入扩散剂等即可使用超大颗粒荧光粉,不但很大程度的提高了光效、而且避免荧光粉大量沉淀在LED芯片侧边位置而产生黄圈现象的技术不足。Aiming at the deficiencies of the prior art, the present invention provides a packaging structure of high-power white light LED. Through the first spin coating, a layer of inner surface mixed with small particle phosphor powder is coated on the upper surface and side wall of the LED chip. A layer of fluorescent glue, after drying, spray it with an automatic glue dispenser, and coat a layer of outer fluorescent glue mixed with super-large particle phosphor powder on the upper surface of the inner layer of fluorescent glue and the corresponding local position above the LED chip. The present invention makes use of the property that the outer layer of fluorescent glue is not easy to infiltrate the dried inner layer of fluorescent glue, so that the outer layer of fluorescent glue forms a convex hull only at the corresponding local position above the LED chip. The present invention can use super-large-grained phosphor powder without adding diffusing agent, etc., which not only greatly improves the light efficiency, but also avoids the technical deficiency of yellow circle phenomenon caused by a large amount of phosphor powder deposited on the side of the LED chip.

本发明还提供上述大功率白光LED封装结构的制备方法。The present invention also provides a preparation method of the above high-power white LED packaging structure.

术语说明:Terminology Explanation:

LED:LightEmittingDiode,发光二极管。LED: LightEmittingDiode, light emitting diode.

本发明的技术方案如下:Technical scheme of the present invention is as follows:

一种大功率白光LED封装结构,包括自下而上设置的LED大功率支架、反射碗杯、蓝光LED芯片、荧光胶、透明硅胶和透镜;所述的反射碗杯设置在LED大功率支架上,所述的蓝光LED芯片通过导电银胶或高导热绝缘胶设置在反射碗杯内;所述的蓝光LED芯片通过金线与LED大功率支架电连接;在蓝光LED芯片上由内而外涂覆有内层荧光胶和外层荧光胶,内层荧光胶内含的荧光粉颗粒尺寸小于外层荧光胶内含的荧光粉颗粒尺寸;所述内层荧光胶的涂覆范围是整个蓝光LED芯片及露出的反射碗杯底面,所述反射碗杯底面上内层荧光胶的厚度小于蓝光LED芯片的厚度;所述外层荧光胶完全包覆蓝光LED芯片的上表面及侧壁,呈凸包状,所述凸包状的外层荧光胶的底面半径小于内层荧光胶底面的半径;所述LED大功率支架的上方设置有透镜,透镜内填充有透明硅胶。A high-power white LED packaging structure, including a bottom-up LED high-power bracket, a reflective bowl, a blue LED chip, fluorescent glue, transparent silica gel and a lens; the reflective bowl is set on the LED high-power bracket , the blue LED chip is set in the reflective bowl through conductive silver glue or high thermal conductivity insulating glue; the blue LED chip is electrically connected to the LED high-power bracket through gold wire; Covered with an inner layer of fluorescent glue and an outer layer of fluorescent glue, the size of the phosphor particles contained in the inner layer of fluorescent glue is smaller than that of the phosphor particles contained in the outer layer of fluorescent glue; the coating range of the inner layer of fluorescent glue is the entire blue LED chip and the bottom surface of the exposed reflective bowl, the thickness of the inner layer of fluorescent glue on the bottom surface of the reflective bowl is smaller than the thickness of the blue LED chip; the outer layer of fluorescent glue completely covers the upper surface and side walls of the blue LED chip, showing a convex Bulb-shaped, the radius of the bottom surface of the convex-hull-shaped outer layer of fluorescent glue is smaller than the radius of the bottom surface of the inner layer of fluorescent glue; a lens is arranged above the LED high-power bracket, and the lens is filled with transparent silica gel.

蓝光LED芯片自侧壁以外至反射碗杯边缘的位置内荧光粉越多就越易产生光圈,本申请为了有效避免光圈的产生,即在芯片以外的范围设置尽量少的荧光粉。为了避免在涂覆内层荧光胶时荧光粉颗粒产生沉淀,在内层荧光胶内采用颗粒较小的荧光粉颗粒;为了提高光效,本申请的外层荧光胶内采用较大的荧光粉颗粒。The more phosphor powder in the blue LED chip from outside the side wall to the edge of the reflective bowl, the easier it is to produce apertures. In order to effectively avoid the occurrence of apertures, this application sets as few phosphors as possible outside the chip. In order to avoid the precipitation of phosphor particles when coating the inner layer of fluorescent glue, the phosphor particles with smaller particles are used in the inner layer of fluorescent glue; in order to improve the light efficiency, larger phosphor particles are used in the outer layer of fluorescent glue in this application particles.

所述内层荧光胶为:荧光粉颗粒与透明硅胶按质量比为1∶7~1∶5的比例混合而成,荧光粉颗粒粒径范围:7~13μm。The fluorescent glue in the inner layer is formed by mixing phosphor particles and transparent silica gel at a mass ratio of 1:7-1:5, and the particle size range of the phosphor particles is 7-13 μm.

优选的,所述内层荧光胶,其荧光粉颗粒与透明硅胶的质量比为1∶6;Preferably, the fluorescent glue in the inner layer has a mass ratio of phosphor particles to transparent silica gel of 1:6;

所述外层荧光胶为:荧光粉颗粒与透明硅胶按质量比为3∶10的比例混合而成,荧光粉颗粒粒径范围:20~23μm。The fluorescent glue in the outer layer is formed by mixing phosphor particles and transparent silica gel at a mass ratio of 3:10, and the particle size range of the phosphor particles is 20-23 μm.

所述透明硅胶的折射率均为1.5。The refractive index of the transparent silica gel is 1.5.

所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度,所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿。The thickness of the inner layer of fluorescent glue is greater than 1/2 of the thickness of the blue LED chip and less than the thickness of the blue LED chip, and the height of the upper surface of the convex outer layer of fluorescent glue is lower than or equal to Reflects the top edge of the bowl.

所述的蓝光LED芯片的尺寸范围为24~50mil。The size range of the blue LED chip is 24-50mil.

所述的透镜为聚碳酸酯透镜(PC透镜)。The lens is a polycarbonate lens (PC lens).

一种上述大功率白光LED封装结构的制备方法,方法步骤如下:A method for preparing the above-mentioned high-power white light LED packaging structure, the method steps are as follows:

1)固晶、焊线:采用导电银胶或高导热绝缘胶将蓝光LED芯片固定在反射碗杯内,并经150℃~180℃固化烘烤60~90min,然后再用金线将蓝光LED芯片焊接在LED大功率支架上;1) Solid crystal, wire bonding: Use conductive silver glue or high thermal conductivity insulating glue to fix the blue LED chip in the reflective bowl, and cure and bake at 150℃~180℃ for 60~90min, and then use gold wire to fix the blue LED chip. The chip is welded on the LED high-power bracket;

2)配制内层荧光胶:粒径为7~13μm的荧光粉颗粒与透明硅胶按质量比为1∶5~1∶7的比例混合搅拌均匀,经真空箱加热脱泡,形成内层荧光胶;2) Prepare the fluorescent glue for the inner layer: mix and stir the fluorescent powder particles with a particle size of 7-13 μm and the transparent silica gel at a mass ratio of 1:5-1:7, and heat and defoam in a vacuum box to form the fluorescent glue for the inner layer ;

3)将步骤2)制得的内层荧光胶采用旋转涂覆方式涂覆在蓝光LED芯片上,经150℃固化烘烤10~15min;烘烤后内层荧光胶分布的外观结构如图2所示;3) Coat the inner layer fluorescent glue prepared in step 2) on the blue LED chip by spin coating, and cure and bake at 150°C for 10-15 minutes; after baking, the appearance structure of the inner layer fluorescent glue distribution is shown in Figure 2 shown;

4)配制外层荧光胶:粒径为20~23μm的荧光粉颗粒与透明硅胶按质量比为3∶10的比例混合搅拌均匀,经真空箱加热脱泡,形成外层荧光胶;4) Prepare the outer layer fluorescent glue: mix and stir the phosphor particles with a particle size of 20-23 μm and the transparent silica gel at a mass ratio of 3:10, and heat and defoam in a vacuum box to form the outer layer fluorescent glue;

5)将步骤4)制得的外层荧光胶采用自动点胶方式喷点在步骤3)固化烘烤后的内层荧光胶上表面、且与蓝光LED芯片相对,立即经140-160℃烘烤3-7min,再转入110-130℃烘烤20-40min,形成包络蓝光LED芯片的凸包状,即制得半成品白光LED;利用步骤3)烘烤后,外层荧光胶与固化的内层荧光胶之间不容易发生浸润的特性,最终得到荧光胶的分布结构,如图3所示;5) Spray the outer layer of fluorescent glue prepared in step 4) on the upper surface of the inner layer of fluorescent glue after curing and baking in step 3) by automatic dispensing, facing the blue LED chip, and immediately bake it at 140-160°C Bake for 3-7 minutes, then transfer to 110-130°C and bake for 20-40 minutes to form a convex hull shape enveloping the blue LED chip, that is, to make a semi-finished white LED; The characteristics of infiltration between the fluorescent glue in the inner layer are not easy to occur, and finally the distribution structure of the fluorescent glue is obtained, as shown in Figure 3;

6)对步骤5)制得的半成品白光LED,盖上透镜,在透镜内填满透明硅胶,经90-110℃烘烤1-1.5h固化,制得大功率型白光LED。6) For the semi-finished white light LED prepared in step 5), cover the lens, fill the lens with transparent silica gel, bake at 90-110° C. for 1-1.5 h to cure, and obtain a high-power white light LED.

优选的,所述步骤2)配制内层荧光胶时:荧光粉颗粒与透明硅胶按质量比为1∶6的比例混合搅拌均匀。Preferably, in the step 2) when preparing the inner fluorescent glue: the fluorescent powder particles and the transparent silica gel are mixed and stirred evenly in a mass ratio of 1:6.

优选的,所述的透明硅胶的折射率均为1.5。Preferably, the refractive index of the transparent silica gel is 1.5.

经步骤3)固化烘烤后所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度;步骤5)所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿。After step 3) curing and baking, the thickness of the inner fluorescent glue is greater than 1/2 of the thickness of the blue LED chip and less than the thickness of the blue LED chip; step 5) the convex hull-shaped outer The height of the upper surface of the layer of fluorescent glue is lower than or equal to the upper edge of the reflective bowl.

所述的蓝光LED芯片的尺寸范围为24~50mil。The size range of the blue LED chip is 24-50mil.

所述的透镜为聚碳酸酯透镜(PC透镜)。The lens is a polycarbonate lens (PC lens).

本发明的优势在于:The advantages of the present invention are:

本发明采用两次不同的涂覆工艺涂覆荧光胶,使得LED芯片侧面的荧光粉沉淀明显减少:所述两次涂覆的荧光胶内的荧光粉的粒径大小不同、粉胶配比不同,继而大颗粒荧光粉主要集中在LED芯片上表面。本发明在不采用扩散剂前提下,既能有效防止黄圈的产生,保证光谱的均匀性,又能提高大功率型白光LED的发光光效。The present invention uses two different coating processes to coat the fluorescent glue, so that the precipitation of the fluorescent powder on the side of the LED chip is significantly reduced: the particle size of the fluorescent powder in the fluorescent glue coated twice is different, and the ratio of powder and glue is different , and then the large particle phosphor is mainly concentrated on the upper surface of the LED chip. Under the premise of not using a diffusing agent, the present invention can effectively prevent the generation of yellow circles, ensure the uniformity of the spectrum, and improve the luminous efficacy of high-power white LEDs.

附图说明 Description of drawings

图1现有功率型白光LED封装荧光胶分布结构示意图;Fig. 1 is a schematic diagram of the distribution structure of fluorescent glue in the existing power type white light LED packaging;

图2本发明经步骤3)固化烘烤后内层荧光胶的分布结构示意图;Fig. 2 is a schematic diagram of the distribution structure of the inner fluorescent glue after step 3) of the present invention is cured and baked;

图3本发明经步骤5)后制得半成品白光LED的结构示意图;Fig. 3 is a structural schematic diagram of the semi-finished white LED produced by the present invention after step 5);

图4本发明的一种大功率白光LED封装结构示意图;Fig. 4 is a schematic structural diagram of a high-power white LED package of the present invention;

图5a为如图1所述LED封装发光正面俯视图;Fig. 5a is a front top view of the LED package emitting light as shown in Fig. 1;

图5b为本发明所述的LED封装发光正面俯视图;Fig. 5b is a front top view of the LED package emitting light according to the present invention;

图示1-4中,1-1、LED大功率支架;1、反射碗杯;2、蓝光LED芯片,3、内层荧光胶;4、外层荧光胶;5、现有功率型白光LED封装的荧光胶结构;6、露出的反射碗杯底面;7、凸包状的外层荧光胶的底面半径;8、内层荧光胶底面的半径;9、反射碗杯的上端边沿;10、透明硅胶;11、透镜。In Figure 1-4, 1-1, LED high-power bracket; 1, reflective bowl; 2, blue LED chip, 3, inner fluorescent glue; 4, outer fluorescent glue; 5, existing power type white light LED Encapsulated fluorescent glue structure; 6. The bottom surface of the exposed reflective bowl; 7. The radius of the bottom surface of the convex outer fluorescent glue; 8. The radius of the bottom surface of the inner fluorescent glue; 9. The upper edge of the reflective bowl; 10. Transparent silica gel; 11. Lens.

具体实施方式 detailed description

下面结合说明书附图和实施例对本发明做详细的说明,但不限于此。The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments, but is not limited thereto.

实施例1、Embodiment 1,

如图4所示,一种大功率白光LED封装结构,包括自下而上设置的LED大功率支架1-1、反射碗杯1、蓝光LED芯片2、荧光胶、透明硅胶10和透镜11;所述的反射碗杯1设置在LED大功率支架1-1上,所述的蓝光LED芯片2通过导电银胶或高导热绝缘胶设置在反射碗杯1内;所述的蓝光LED芯片2通过金线与LED大功率支架1-1电连接;在蓝光LED芯片2上由内而外涂覆有内层荧光胶3和外层荧光胶4,内层荧光胶3内含的荧光粉颗粒尺寸小于外层荧光胶4内含的荧光粉颗粒尺寸;所述内层荧光胶3的涂覆范围是整个蓝光LED芯片2及露出的反射碗杯底面6,所述反射碗杯底面上内层荧光胶3的厚度小于蓝光LED芯片2的厚度;所述外层荧光胶4完全包覆蓝光LED芯片2的上表面及侧壁,呈凸包状,所述凸包状的外层荧光胶4的底面半径7小于内层荧光胶底面的半径8;所述LED大功率支架1-1的上方设置有透镜11,透镜11内填充有透明硅胶10。所述的蓝光LED芯片2的尺寸为24mil。As shown in FIG. 4 , a high-power white LED packaging structure includes a bottom-up LED high-power bracket 1-1, a reflective bowl cup 1, a blue LED chip 2, fluorescent glue, transparent silica gel 10 and a lens 11; The reflective bowl 1 is set on the LED high-power bracket 1-1, and the blue LED chip 2 is set in the reflective bowl 1 through conductive silver glue or high thermal conductivity insulating glue; the blue LED chip 2 passes through The gold wire is electrically connected to the LED high-power bracket 1-1; the blue LED chip 2 is coated with an inner layer of fluorescent glue 3 and an outer layer of fluorescent glue 4 from the inside out, and the particle size of the phosphor powder contained in the inner layer of fluorescent glue 3 is Smaller than the phosphor particle size contained in the outer layer of fluorescent glue 4; the coating range of the inner layer of fluorescent glue 3 is the entire blue LED chip 2 and the exposed reflective bowl bottom 6, and the inner layer of fluorescent light on the bottom of the reflective bowl The thickness of the glue 3 is smaller than the thickness of the blue LED chip 2; the outer fluorescent glue 4 completely covers the upper surface and the side wall of the blue LED chip 2, and is in the shape of a convex hull, and the outer fluorescent glue 4 of the convex hull shape The radius 7 of the bottom surface is smaller than the radius 8 of the bottom surface of the inner fluorescent glue; a lens 11 is arranged above the LED high-power bracket 1-1, and the lens 11 is filled with transparent silica gel 10. The size of the blue LED chip 2 is 24mil.

所述内层荧光胶3为:荧光粉颗粒与透明硅胶按质量比为1∶6的比例混合而成,荧光粉颗粒粒径范围:7~13μm。所述外层荧光胶4为:荧光粉颗粒与透明硅胶按质量比为3∶10的比例混合而成,荧光粉颗粒粒径范围:20~23μm。所述透明硅胶10的折射率均为1.5。所述的内层荧光胶3厚度为大于所述蓝光LED芯片2厚度的1/2,并小于所述蓝光LED芯片2的厚度,所述呈凸包状的外层荧光胶4的上表面高度低于或等于反射碗杯的上端边沿9。The fluorescent glue 3 in the inner layer is formed by mixing phosphor particles and transparent silica gel at a mass ratio of 1:6, and the particle size of the phosphor particles ranges from 7 to 13 μm. The outer fluorescent glue 4 is formed by mixing fluorescent powder particles and transparent silica gel at a mass ratio of 3:10, and the particle size range of the fluorescent powder particles is 20-23 μm. The refractive index of the transparent silica gel 10 is 1.5. The thickness of the inner fluorescent glue 3 is greater than 1/2 of the thickness of the blue LED chip 2 and smaller than the thickness of the blue LED chip 2, and the height of the upper surface of the convex outer fluorescent glue 4 is Lower than or equal to the upper edge 9 of the reflective bowl.

所述的透镜11为聚碳酸酯透镜(PC透镜)。The lens 11 is a polycarbonate lens (PC lens).

实施例2、Embodiment 2,

如图2-3所示。如实施例1所述一种上述大功率白光LED封装结构的制备方法,方法步骤如下:As shown in Figure 2-3. As described in Example 1, a method for preparing the above-mentioned high-power white LED packaging structure, the method steps are as follows:

1)固晶、焊线:采用导电银胶或高导热绝缘胶将蓝光LED芯片2固定在反射碗杯1内,并经150℃~180℃固化烘烤60~90min,然后再用金线将蓝光LED芯片2焊接在LED大功率支架1-1上;1) Die bonding and wire bonding: Use conductive silver glue or high thermal conductivity insulating glue to fix the blue LED chip 2 in the reflective bowl 1, and cure and bake at 150°C-180°C for 60-90min, and then use gold wire to The blue LED chip 2 is welded on the LED high-power bracket 1-1;

2)配制内层荧光胶3:粒径为7~13μm的荧光粉颗粒与透明硅胶按质量比为1∶6的比例混合搅拌均匀,经真空箱加热脱泡,形成内层荧光胶3;2) Prepare the fluorescent glue 3 for the inner layer: mix and stir the fluorescent powder particles with a particle size of 7-13 μm and the transparent silica gel at a mass ratio of 1:6, and heat and defoam in a vacuum box to form the fluorescent glue 3 for the inner layer;

3)将步骤2)制得的内层荧光胶3采用旋转涂覆方式涂覆在蓝光LED芯片2上,经150℃固化烘烤10~15min;烘烤后内层荧光胶3分布的外观结构如图2所示;经步骤3)固化烘烤后所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度;3) Coat the inner layer fluorescent glue 3 prepared in step 2) on the blue LED chip 2 by spin coating, and cure and bake at 150°C for 10-15 minutes; the appearance structure of the inner layer fluorescent glue 3 distribution after baking As shown in Figure 2; after step 3) curing and baking, the thickness of the inner fluorescent glue is greater than 1/2 of the thickness of the blue LED chip, and less than the thickness of the blue LED chip;

4)配制外层荧光胶4:粒径为20~23μm的荧光粉颗粒与透明硅胶按质量比为3∶10的比例混合搅拌均匀,经真空箱加热脱泡,形成外层荧光胶4;4) Prepare the outer layer fluorescent glue 4: mix and stir the phosphor particles with a particle size of 20-23 μm and the transparent silica gel at a mass ratio of 3:10, and heat and defoam in a vacuum box to form the outer layer fluorescent glue 4;

5)将步骤4)制得的外层荧光胶4采用自动点胶方式喷点在步骤3)固化烘烤后的内层荧光胶3上表面、且与蓝光LED芯片2相对,立即经150℃烘烤5min,再转入120℃烘烤30min,形成包络蓝光LED芯片2的凸包状,即制得半成品白光LED;利用步骤3)烘烤后,外层荧光胶4与固化的内层荧光胶3之间不容易发生浸润的特性,最终得到荧光胶的分布结构,如图3所示;步骤5)所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿;5) Spray the outer layer of fluorescent glue 4 prepared in step 4) on the upper surface of the inner layer of fluorescent glue 3 after curing and baking in step 3) by automatic dispensing, facing the blue LED chip 2, and immediately heat it at 150°C Bake for 5 minutes, then transfer to 120°C and bake for 30 minutes to form a convex hull shape enveloping the blue LED chip 2, that is, to make a semi-finished white LED; after baking in step 3), the outer fluorescent glue 4 and the cured inner The characteristics of infiltration between the fluorescent glue 3 are not easy to occur, and finally the distribution structure of the fluorescent glue is obtained, as shown in Figure 3; the upper surface height of the convex hull-shaped outer fluorescent glue described in step 5) is lower than or equal to the reflective bowl the upper edge of the cup;

6)对步骤5)制得的半成品白光LED,盖上透镜11,在透镜11内填满透明硅胶10,经100℃烘烤1小时固化,制得大功率型白光LED。6) For the semi-finished white LED produced in step 5), cover the lens 11, fill the transparent silica gel 10 in the lens 11, and bake it at 100°C for 1 hour to cure to obtain a high-power white LED.

实施例3、Embodiment 3,

如实施例1所述的一种大功率白光LED封装结构,所不同之处在于,所述的蓝光LED芯片2的尺寸为50mil。所述内层荧光胶3为:荧光粉颗粒与透明硅胶按质量比为1∶5的比例混合而成。A high-power white LED package structure as described in Embodiment 1, the difference lies in that the size of the blue LED chip 2 is 50mil. The inner fluorescent glue 3 is formed by mixing fluorescent powder particles and transparent silica gel at a mass ratio of 1:5.

实施例4、Embodiment 4,

如实施例3所述一种上述大功率白光LED封装结构的制备方法,方法步骤如下:As described in Example 3, a method for preparing the above-mentioned high-power white LED packaging structure, the method steps are as follows:

1)固晶、焊线:采用导电银胶或高导热绝缘胶将蓝光LED芯片2固定在反射碗杯内1,并经150℃~180℃固化烘烤60~90min,然后再用金线将蓝光LED芯片2焊接在LED大功率支架1-1上;1) Die bonding and wire bonding: Use conductive silver glue or high thermal conductivity insulating glue to fix the blue LED chip 2 in the reflective bowl 1, and cure and bake at 150°C-180°C for 60-90min, and then use gold wire to The blue LED chip 2 is welded on the LED high-power bracket 1-1;

2)配制内层荧光胶3:粒径为7~13μm的荧光粉颗粒与透明硅胶按质量比为1∶5的比例混合搅拌均匀,经真空箱加热脱泡,形成内层荧光胶;2) Preparation of fluorescent glue 3 for the inner layer: the fluorescent powder particles with a particle size of 7-13 μm and the transparent silica gel are mixed and stirred evenly at a mass ratio of 1:5, and heated and defoamed in a vacuum box to form the fluorescent glue for the inner layer;

3)将步骤2)制得的内层荧光胶3采用旋转涂覆方式涂覆在蓝光LED芯片2上,经150℃固化烘烤10~15min;烘烤后内层荧光胶3分布的外观结构如图2所示;经步骤3)固化烘烤后所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度;3) Coat the inner layer fluorescent glue 3 prepared in step 2) on the blue LED chip 2 by spin coating, and cure and bake at 150°C for 10-15 minutes; the appearance structure of the inner layer fluorescent glue 3 distribution after baking As shown in Figure 2; after step 3) curing and baking, the thickness of the inner fluorescent glue is greater than 1/2 of the thickness of the blue LED chip, and less than the thickness of the blue LED chip;

4)配制外层荧光胶4:粒径为20~23μm的荧光粉颗粒与透明硅胶按质量比为3∶10的比例混合搅拌均匀,经真空箱加热脱泡,形成外层荧光胶4;4) Prepare the outer layer fluorescent glue 4: mix and stir the phosphor particles with a particle size of 20-23 μm and the transparent silica gel at a mass ratio of 3:10, and heat and defoam in a vacuum box to form the outer layer fluorescent glue 4;

5)将步骤4)制得的外层荧光胶4采用自动点胶方式喷点在步骤3)固化烘烤后的内层荧光胶3上表面、且与蓝光LED芯片2相对,立即经160℃烘烤6min,再转入120℃烘烤35min,形成包络蓝光LED芯片2的凸包状,即制得半成品白光LED;利用步骤3)烘烤后,外层荧光胶4与固化的内层荧光胶3之间不容易发生浸润的特性,最终得到荧光胶的分布结构,如图3所示;步骤5)所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿;5) Spray the outer layer of fluorescent glue 4 prepared in step 4) on the upper surface of the inner layer of fluorescent glue 3 after curing and baking in step 3) by automatic dispensing, facing the blue LED chip 2, and immediately heat it at 160°C. Bake for 6 minutes, then transfer to 120°C and bake for 35 minutes to form a convex hull shape enveloping the blue LED chip 2, that is, to make a semi-finished white LED; after baking in step 3), the outer fluorescent glue 4 and the cured inner layer The characteristics of infiltration between the fluorescent glue 3 are not easy to occur, and finally the distribution structure of the fluorescent glue is obtained, as shown in Figure 3; the upper surface height of the convex hull-shaped outer fluorescent glue described in step 5) is lower than or equal to the reflective bowl the upper edge of the cup;

6)对步骤5)制得的半成品白光LED,盖上透镜11,在透镜11内填满透明硅胶10,经100℃烘烤1.5h固化,制得大功率型白光LED。6) For the semi-finished white light LED prepared in step 5), cover the lens 11, fill the transparent silica gel 10 in the lens 11, bake at 100° C. for 1.5 h to cure, and obtain a high-power white light LED.

对比例、Comparative example,

采用常规制备工艺制成的大功率白光LED封装,如图1所示:其结构为在蓝光LED芯片上制备单层荧光胶5,所述蓝光LED芯片的尺寸为:24mil,所述单层荧光胶5的成分与实施例1所述的内层荧光胶3的成分完全相同。图5a为如图1所述LED封装发光正面俯视图。A high-power white LED package made by a conventional preparation process is shown in Figure 1: its structure is to prepare a single-layer fluorescent glue 5 on a blue LED chip, the size of the blue LED chip is 24mil, and the single-layer fluorescent The composition of the glue 5 is exactly the same as that of the inner layer fluorescent glue 3 described in Example 1. Fig. 5a is a front top view of the light-emitting LED package as shown in Fig. 1 .

如图4所示,采用本发明所述的方法制备大功率白光LED封装结构,所述蓝光LED芯片的尺寸同为:24mil。图5b为本发明所述的LED封装发光正面俯视图。As shown in FIG. 4 , the high-power white LED package structure is prepared by the method of the present invention, and the size of the blue LED chip is also 24mil. Fig. 5b is a front top view of the light-emitting LED package according to the present invention.

如图5a、5b所示,相比于常规制备工艺制备的LED封装,本发明的大功率白光LED封装所散发出的光谱均匀性能得到大大提高,光圈减少,蓝光LED芯片的光功率与最终白光出射光通量的转换效率提高5%以上。As shown in Figures 5a and 5b, compared with the LED packages prepared by the conventional manufacturing process, the spectral uniformity of the high-power white LED package of the present invention is greatly improved, the aperture is reduced, and the optical power of the blue LED chip is consistent with the final white light. The conversion efficiency of the outgoing luminous flux is increased by more than 5%.

Claims (9)

1.一种大功率白光LED封装结构,包括自下而上设置的LED大功率支架、反射碗杯、蓝光LED芯片、荧光胶、透明硅胶和透镜;其特征在于,所述的反射碗杯设置在LED大功率支架上,所述的蓝光LED芯片通过导电银胶或高导热绝缘胶设置在反射碗杯内;所述的蓝光LED芯片通过金线与LED大功率支架电连接;在蓝光LED芯片上由内而外涂覆有内层荧光胶和外层荧光胶,内层荧光胶内含的荧光粉颗粒尺寸小于外层荧光胶内含的荧光粉颗粒尺寸;所述内层荧光胶的涂覆范围是整个蓝光LED芯片及露出的反射碗杯底面,所述反射碗杯底面上内层荧光胶的厚度小于蓝光LED芯片的厚度;所述外层荧光胶完全包覆蓝光LED芯片的上表面及侧壁,呈凸包状,所述凸包状的外层荧光胶的底面半径小于内层荧光胶底面的半径;所述LED大功率支架的上方设置有透镜,透镜内填充有透明硅胶;1. A packaging structure for high-power white light LEDs, comprising LED high-power brackets, reflective bowls, blue LED chips, fluorescent glue, transparent silica gel and lenses from bottom to top; it is characterized in that the reflective bowls are set On the LED high-power bracket, the blue LED chip is set in the reflective bowl through conductive silver glue or high thermal conductivity insulating glue; the blue LED chip is electrically connected to the LED high-power bracket through gold wire; The inner layer of fluorescent glue and the outer layer of fluorescent glue are coated from the inside to the outside, and the size of the phosphor particles contained in the inner layer of fluorescent glue is smaller than that of the phosphor particles contained in the outer layer of fluorescent glue; the coating of the inner layer of fluorescent glue The coverage area is the entire blue LED chip and the bottom surface of the exposed reflective bowl, the thickness of the inner layer of fluorescent glue on the bottom surface of the reflective bowl is smaller than the thickness of the blue LED chip; the outer layer of fluorescent glue completely covers the upper surface of the blue LED chip And the side wall is in the shape of a convex hull, the radius of the bottom surface of the convex hull-shaped outer layer of fluorescent glue is smaller than the radius of the bottom surface of the inner layer of fluorescent glue; a lens is arranged above the LED high-power bracket, and the lens is filled with transparent silica gel; 所述内层荧光胶为:荧光粉颗粒与透明硅胶按质量比为1:7~1:5的比例混合而成,荧光粉颗粒粒径范围:7~13μm;所述外层荧光胶为:荧光粉颗粒与透明硅胶按质量比为3:10的比例混合而成,荧光粉颗粒粒径范围:20~23μm。The fluorescent glue in the inner layer is: fluorescent powder particles and transparent silica gel are mixed at a mass ratio of 1:7 to 1:5, and the particle size range of the phosphor powder particles is 7 to 13 μm; the fluorescent glue in the outer layer is: Phosphor powder particles and transparent silica gel are mixed at a mass ratio of 3:10, and the particle size range of phosphor powder particles is 20-23 μm. 2.如权利要求1所述的一种大功率白光LED封装结构,其特征在于,所述内层荧光胶,其荧光粉颗粒与透明硅胶的质量比为1:6。2. A high-power white LED packaging structure as claimed in claim 1, characterized in that, the inner layer of fluorescent glue has a mass ratio of phosphor particles to transparent silica gel of 1:6. 3.如权利要求1所述的一种大功率白光LED封装结构,其特征在于,所述透明硅胶的折射率均为1.5。3 . The high-power white LED packaging structure according to claim 1 , wherein the refractive index of the transparent silica gel is 1.5. 4 . 4.如权利要求1所述的一种大功率白光LED封装结构,其特征在于,所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度,所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿。4. A packaging structure for high-power white LEDs according to claim 1, wherein the thickness of the inner fluorescent adhesive is greater than 1/2 of the thickness of the blue LED chip and less than that of the blue LED chip The height of the upper surface of the convex outer fluorescent glue is lower than or equal to the upper edge of the reflective bowl. 5.如权利要求1所述的一种大功率白光LED封装结构,其特征在于,所述的蓝光LED芯片的尺寸范围为24~50mil;所述的透镜为PC透镜。5. A high-power white LED packaging structure as claimed in claim 1, characterized in that, the size range of the blue LED chip is 24-50 mil; the lens is a PC lens. 6.如权利要求1所述的一种大功率白光LED封装结构的制备方法,其特征在于,方法步骤如下:6. the preparation method of a kind of high-power white light LED encapsulation structure as claimed in claim 1, is characterized in that, method step is as follows: 1)固晶、焊线:采用导电银胶或高导热绝缘胶将蓝光LED芯片固定在反射碗杯内,并经150℃~180℃固化烘烤60~90min,然后再用金线将蓝光LED芯片焊接在LED大功率支架上;1) Solid crystal, wire bonding: Use conductive silver glue or high thermal conductivity insulating glue to fix the blue LED chip in the reflective bowl, and cure and bake at 150℃~180℃ for 60~90min, and then use gold wire to fix the blue LED chip. The chip is welded on the LED high-power bracket; 2)配制内层荧光胶:粒径为7~13μm的荧光粉颗粒与透明硅胶按质量比为1:5~1:7的比例混合搅拌均匀,经真空箱加热脱泡,形成内层荧光胶;2) Prepare the fluorescent glue for the inner layer: mix and stir the fluorescent powder particles with a particle size of 7-13 μm and the transparent silica gel at a mass ratio of 1:5-1:7, and heat and defoam in a vacuum box to form the fluorescent glue for the inner layer ; 3)将步骤2)制得的内层荧光胶采用旋转涂覆方式涂覆在蓝光LED芯片上,经150℃固化烘烤10~15min;3) Coat the inner fluorescent glue prepared in step 2) on the blue LED chip by spin coating, and cure and bake at 150°C for 10-15 minutes; 4)配制外层荧光胶:粒径为20~23μm的荧光粉颗粒与透明硅胶按质量比为3:10的比例混合搅拌均匀,经真空箱加热脱泡,形成外层荧光胶;4) Prepare the outer layer of fluorescent glue: mix and stir the phosphor particles with a particle size of 20-23 μm and transparent silica gel at a mass ratio of 3:10, and heat and defoam in a vacuum box to form the outer layer of fluorescent glue; 5)将步骤4)制得的外层荧光胶采用自动点胶方式喷点在步骤3)固化烘烤后的内层荧光胶上表面、且与蓝光LED芯片相对,立即经140-160℃烘烤3-7min,再转入110-130℃烘烤20-40min,形成包络蓝光LED芯片的凸包状,即制得半成品白光LED;5) Spray the outer layer of fluorescent glue prepared in step 4) on the upper surface of the inner layer of fluorescent glue after curing and baking in step 3) by automatic dispensing, facing the blue LED chip, and immediately bake it at 140-160°C Bake for 3-7 minutes, then transfer to 110-130°C and bake for 20-40 minutes to form a convex hull shape enveloping the blue LED chip, that is, to produce a semi-finished white LED; 6)对步骤5)制得的半成品白光LED,盖上透镜,在透镜内填满透明硅胶,经90-110℃烘烤1-1.5h固化,制得大功率型白光LED。6) For the semi-finished white light LED prepared in step 5), cover the lens, fill the lens with transparent silica gel, bake at 90-110° C. for 1-1.5 h to cure, and obtain a high-power white light LED. 7.如权利要求6所述的方法,其特征在于,所述步骤2)配制内层荧光胶时:荧光粉颗粒与透明硅胶按质量比为1:6的比例混合搅拌均匀。7 . The method according to claim 6 , wherein, in the step 2) when preparing the inner fluorescent glue: the phosphor particles and the transparent silica gel are mixed and stirred evenly at a mass ratio of 1:6. 8.如权利要求6所述的方法,其特征在于,所述的蓝光LED芯片的尺寸范围为24~50mil,所述的透明硅胶的折射率均为1.5;所述的透镜为PC透镜。8. The method according to claim 6, wherein the size range of the blue LED chip is 24-50 mil, and the refractive index of the transparent silica gel is 1.5; the lens is a PC lens. 9.如权利要求6所述的方法,其特征在于,经步骤3)固化烘烤后所述的内层荧光胶厚度为大于所述蓝光LED芯片厚度的1/2,并小于所述蓝光LED芯片的厚度;步骤5)所述呈凸包状的外层荧光胶的上表面高度低于或等于反射碗杯的上端边沿。9. The method according to claim 6, characterized in that, after step 3) curing and baking, the thickness of the inner fluorescent glue is greater than 1/2 of the thickness of the blue LED chip, and less than that of the blue LED chip. The thickness of the chip; Step 5) The height of the upper surface of the convex outer fluorescent glue is lower than or equal to the upper edge of the reflective bowl.
CN201110438682.0A 2011-12-23 2011-12-23 A kind of large power white light LED encapsulating structure and preparation method thereof Active CN103178194B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110438682.0A CN103178194B (en) 2011-12-23 2011-12-23 A kind of large power white light LED encapsulating structure and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110438682.0A CN103178194B (en) 2011-12-23 2011-12-23 A kind of large power white light LED encapsulating structure and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103178194A CN103178194A (en) 2013-06-26
CN103178194B true CN103178194B (en) 2016-05-25

Family

ID=48637928

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110438682.0A Active CN103178194B (en) 2011-12-23 2011-12-23 A kind of large power white light LED encapsulating structure and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103178194B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104953005A (en) * 2014-03-27 2015-09-30 江苏稳润光电有限公司 High-power LED packaging
CN105304787A (en) * 2014-06-30 2016-02-03 山东浪潮华光光电子股份有限公司 White-light package structure for LED thin-film chip and preparation method of white-light package structure
CN105715978A (en) * 2016-04-26 2016-06-29 广州市尤特新材料有限公司 LED light source
CN106449685B (en) * 2016-10-24 2018-09-21 江苏钜芯集成电路技术股份有限公司 Spray-bonding craft for sensitive chip encapsulation
CN107046090B (en) * 2017-03-31 2023-04-21 华南理工大学 Preparation method of patterned remote fluorescent sheet based on vacuum adsorption
CN107425096A (en) * 2017-07-21 2017-12-01 中山市华南理工大学现代产业技术研究院 A remote coating phosphor sheet and its preparation method
CN107255229A (en) * 2017-07-24 2017-10-17 中山市华南理工大学现代产业技术研究院 A kind of new integrated lamp just assembled and its manufacture method
CN109728152A (en) * 2017-10-27 2019-05-07 深圳市聚飞光电股份有限公司 LED encapsulation method and LED
CN108022919A (en) * 2017-11-02 2018-05-11 江苏稳润光电科技有限公司 A kind of raising white light LEDs enter BIN rate methods
CN113671751B (en) * 2021-08-18 2024-05-14 安徽芯瑞达科技股份有限公司 Near zero OD backlight module
CN113964258B (en) * 2021-10-29 2023-11-14 广东晶科电子股份有限公司 LED packaging structure and manufacturing method
CN114628989A (en) * 2022-03-15 2022-06-14 武汉光迅科技股份有限公司 Heater-based silicon optical chip bottom filling structure and clamp and filling method thereof
CN115440868A (en) * 2022-08-15 2022-12-06 上海应用技术大学 A solar-like/full-spectrum LED based on single-component full-spectrum phosphor packaging
CN117414984B (en) * 2023-12-18 2024-02-23 四川华体照明科技股份有限公司 LED fluorescent glue coating device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101262032A (en) * 2007-03-07 2008-09-10 光宝科技股份有限公司 white light emitting diode
EP2230700A2 (en) * 2009-03-20 2010-09-22 Everlight Electronics Co. Ltd. Light emitting diode package structure and manufacturing method thereof
CN201829530U (en) * 2010-09-02 2011-05-11 深圳市海隆兴光电子有限公司 Light-source lamp of light emitting diode (LED) white light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101262032A (en) * 2007-03-07 2008-09-10 光宝科技股份有限公司 white light emitting diode
EP2230700A2 (en) * 2009-03-20 2010-09-22 Everlight Electronics Co. Ltd. Light emitting diode package structure and manufacturing method thereof
CN201829530U (en) * 2010-09-02 2011-05-11 深圳市海隆兴光电子有限公司 Light-source lamp of light emitting diode (LED) white light emitting diode

Also Published As

Publication number Publication date
CN103178194A (en) 2013-06-26

Similar Documents

Publication Publication Date Title
CN103178194B (en) A kind of large power white light LED encapsulating structure and preparation method thereof
CN106410022B (en) A kind of manufacturing method and LED packaging of LED packaging
CN103219449B (en) LED packaging structure and LED packaging method
CN102185042A (en) Light-emitting diode (LED) packaging method, packaging device and light adjusting method and system
CN104966775A (en) White light LED and white light LED manufacturing method
CN101551068A (en) Light emitting diode device and encapsulating method thereof
CN109713110A (en) Wafer-level package LED and preparation method thereof
CN110444652A (en) A kind of LED lamp bead and manufacturing method
CN105336835A (en) LED packaging structure and packaging method thereof
CN101123286A (en) Light emitting diode packaging structure and method
CN106505138B (en) LED packaging structure and preparation method thereof
CN105633248B (en) A kind of LED lamp and preparation method thereof
CN207353289U (en) A kind of LED encapsulation structure and automobile dimming-distance lighting system for improving light efficiency
CN201087782Y (en) Light emitting diode with light mixing function
CN102891235B (en) High-output low-attenuation white light LED (light emitting diode) and manufacturing method thereof
CN105826453A (en) Preparation method of COB optical module and COB optical module
CN104505451A (en) Multilayer long-distance fluorescent powder coated LED packaging unit, die and manufacturing method
CN201964172U (en) Light-emitting diode (LED) packaging structure
CN104752588A (en) Fluorescent glue coating method for flip chip
CN113161466B (en) A solar spectrum packaging structure and manufacturing method thereof
CN205863219U (en) A kind of LED encapsulation of Multi-core
CN101295755A (en) Phosphor film for light emitting diodes
CN103367609A (en) LED packaging structure with low spatial color cast
CN207800646U (en) A kind of high light efficiency LED encapsulating structure
CN118645574A (en) LED packaging device and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200910

Address after: 277000 No.19 Guangming West Road, high tech Zone, Zaozhuang City, Shandong Province

Patentee after: ZAOZHUANG KESHUN DIGITAL Co.,Ltd.

Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang

Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd.

TR01 Transfer of patent right
OL01 Intention to license declared
OL01 Intention to license declared