CN103177925B - A kind of adjustable confinement ring for plasma processing apparatus - Google Patents
A kind of adjustable confinement ring for plasma processing apparatus Download PDFInfo
- Publication number
- CN103177925B CN103177925B CN201110437212.2A CN201110437212A CN103177925B CN 103177925 B CN103177925 B CN 103177925B CN 201110437212 A CN201110437212 A CN 201110437212A CN 103177925 B CN103177925 B CN 103177925B
- Authority
- CN
- China
- Prior art keywords
- confinement ring
- plasma
- baffle plate
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention provides a kind of adjustable confinement ring for plasma processing apparatus, wherein, described confinement ring is discharged also and the charged particle of redundancy for the process gas controlling redundancy, the below of described confinement ring is also provided with at least one baffle plate, described baffle plate is parallel to described confinement ring and at least partly overlapping in vertical direction with described confinement ring, wherein, described baffle plate is provided with some passing aways.The present invention can improve the asymmetry in plasma process region, and improves the processing procedure inhomogeneity of substrate further.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of adjustable confinement ring for plasma processing apparatus.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is the reacting gas passed in vacuum reaction chamber containing suitable etching agent or deposit source gas, and then radio-frequency (RF) energy input is carried out to this vacuum reaction chamber, with activated reactive gas, light and maintain plasma, so that the material layer etched respectively on substrate surface or over the substrate surface depositing layer of material, and then semiconductor chip and plasma flat are processed.For example, capacitive plasma reactor has been widely used for processing semiconductor substrate and display plate, in capacitive plasma reactor, when radio-frequency power is applied to two electrodes one or both of, just between pair of parallel electrode, form capacitive discharge.
Plasma is diffusible, although most of plasma is known from experience in the processing region rested between pair of electrodes, part plasma may be full of whole operating room.For example, plasma may be full of below vacuum reaction chamber processing region outside region.If plasma arrives these regions, then may there is burn into deposit or erosion in these regions thereupon, this can cause the particle of reative cell inside to stain, and then reduces the repeat performance of plasma treatment appts, and may shorten the working life of reative cell or reative cell parts.If not by plasma confinement in certain working region, charged particle will clash into not protected region, and then cause surface of semiconductor chip impurity and pollution.
Thus, generally in plasma processing apparatus, be also provided with confinement ring (confinementring) in the industry, in order to the reacting gas of control discharge and when the charged particle in reacting gas by this plasm restraint device time by they charge neutrality, thus electric discharge is constrained within processing region substantially, to prevent the cavity pollution problem that may cause in plasma treatment appts use procedure.
But, those skilled in the art are to be understood that, plasma process region in plasma processing apparatus can produce uneven phenomenon, and the uneven processing procedure inhomogeneity of substrate that will cause further of process zone, as everyone knows, the inhomogeneity of substrate processing procedure is the Key technique problem that this area needs to solve, and the present invention proposes based on this just.
Summary of the invention
For the problems referred to above in background technology, first aspect present invention proposes a kind of adjustable plasma confinement ring being applied to plasma processing apparatus, wherein said plasma treatment appts comprises plasma processing region and exhaust gas region, described plasma confinement ring is between the plasma processing region and exhaust gas region of described plasma treatment appts, there is multiple gas passage the gas from process zone is flow through when described plasma confinement ring enters exhaust gas region be neutralized, the below of described confinement ring or top are also provided with at least one baffle plate, described baffle plate and described confinement ring are overlapping at least partly in vertical direction.
Further, described baffle plate is arranged at the mounting points below described confinement ring, and the described mounting points plasma density corresponded to above described confinement ring is less than other parts above described confinement ring and reaches the region being greater than 10%.。
Alternatively, described plasma confinement ring comprises an earth point and is connected with the conductor with earth point position, and wherein said mounting points is arranged at away from described earth point.
Alternatively, described mounting points is arranged at the top electrode of described plasma processing apparatus and the larger side of bottom electrode distance.
Alternatively, described mounting points is arranged at the side of the cavity depression of described plasma processing apparatus.
Alternatively, described baffle plate is arranged at side away from the vacuum pump of plasma processing apparatus and electrically floating.
Further, described baffle plate comprises the ventilation zone that area is greater than 30%.
Further, described baffle plate can move relative to described confinement ring in the horizontal direction or in vertical direction.
Further, the type of drive of described confinement ring movement comprise adopt electric machine, hydraulic means, pneumatic shuttle drive.
Further, described baffle plate has an arc section, makes baffle surface have different distance to described plasma confinement ring.
Further, described baffle plate area is greater than 9CM
2
Second aspect present invention proposes a kind of plasma processing apparatus, and wherein, described plasma processing apparatus comprises the confinement ring described in first aspect present invention.
Confinement ring provided by the invention and the plasma device comprising this confinement ring can improve the asymmetric problem of process zone, and improve the process uniformity problem of substrate further.
Accompanying drawing explanation
Fig. 1 is the structural representation not adopting plasma processing apparatus of the present invention;
Fig. 2 is the structural representation of the plasma processing apparatus of a specific embodiment of the present invention;
Fig. 3 be the confinement ring of the plasma processing apparatus of a specific embodiment of the present invention and baffle plate look up details enlarged drawing;
Fig. 4 (a) is the details enlarged drawing of the baffle plate of the plasma processing apparatus of a specific embodiment of the present invention;
Fig. 4 (b) is the details enlarged drawing of the baffle plate of the plasma processing apparatus of a specific embodiment of the present invention;
Fig. 5 is the structural representation of the plasma processing apparatus of a specific embodiment of the present invention;
Fig. 6 is the confinement ring of the plasma processing apparatus of a specific embodiment of the present invention and the structural representation of removable baffle plate;
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Technological invention mechanism of the present invention is by the lower part of plasma density in processing region, at least one baffle plate is set below corresponding confinement ring, the flow velocity of cavity is flowed out in order to limit plasma herein, improve plasma treatment zone not to becoming second nature, the homogeneity in other regions of substrate processing procedure herein and substrate is guaranteed.Fig. 1 shows the process zone in the plasma processing apparatus used before the present invention, as shown in Figure 1, due to its illustratively on the right side of diagram chamber directly or indirectly by confinement ring ground connection, near this ground connection place, the process zone A of (on the left of illustrated plasma processing apparatus) " has been dragged " higher, does not comparatively have the opposite side of this chamber of earth terminal (on the right side of illustrated plasma processing apparatus) plasma density lower.Thus, make the marginal portion processing procedure rate reduction of substrate W in earth terminal side pending in illustrating, and relatively high in the processing procedure speed of opposite side, and the substrate W of processing procedure gained will inevitably produce the defect of homogeneity.
Refer to Fig. 2, Fig. 2 is the structural representation of the plasma processing apparatus using plasm restraint device of the present invention.Plasma processing apparatus 1 as shown in the figure has a process chambers 10, and process chambers 10 is essentially cylindricality, and process chambers sidewall perpendicular, there is in process chambers 10 top electrode 11 arranged in parallel and bottom electrode 13.Usually, the region between top electrode 11 and bottom electrode 13 is processing region B, this region B by formation high-frequency energy to light and maintain plasma.Above bottom electrode 13, place substrate W to be processed, this substrate W can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.Reacting gas is input in process chambers 10 from gas source 12, one or more radio-frequency power supply 14 can be applied on bottom electrode 13 individually or be applied to top electrode 11 respectively with on bottom electrode 13 simultaneously, in order to radio-frequency power is transported on bottom electrode 13 or top electrode 11 with on bottom electrode 13, thus produce large electric field in process chambers 10 inside.Most of electric field line is comprised in the processing region B between top electrode 11 and bottom electrode 13, and this electric field accelerates the electronics being present in process chambers 11 inside on a small quantity, makes it the gas molecule collision with the reacting gas inputted.These collisions cause exciting of the ionization of reacting gas and plasma, thus process chambers 10 in generation plasma.The neutral gas molecule of reacting gas loses electronics when standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode 13 direction, and the neutral substance in processed substrate is combined, and excites substrate to process, i.e. etching, deposit etc.Certain suitable position of plasma processing apparatus 1 is provided with exhaust gas region territory, exhaust gas region territory is connected with external exhaust apparatus (such as vacuum pump pump 15), in order in processing procedure by with cross reacting gas and bi-product gas pump-and-treat system region B.
In an application scenarios, owing to confinement ring 16 being connected to earth terminal 17 near the right side cavity of plasma processing apparatus as shown in Figure 1, then plasma process region A " has been dragged " above the confinement ring 16 on right side, from space, plasma process region A presents asymmetric cloud form, particularly, be connected with near the confinement ring of earth terminal, its process zone is by " picking-up ", and away near the confinement ring of earth terminal, its processing procedure district extends to below substrate always.Therefore, the plasma density of the substrate region Wa (see Fig. 2) at this region place is lower.Relatively, the plasma density of opposite side corresponding region Wb (see Fig. 2) in substrate W horizontal direction is higher.
It should be noted that, although illustrated confinement ring 16 is directly connected in earth terminal 17, it will be appreciated by those skilled in the art that described confinement ring 16 is optionally connected to earth terminal 17 indirectly, such as, described earth terminal 17 is connected to by a kind of coupling assembling (not shown).
What Fig. 3 illustrated the confinement ring of the plasma processing apparatus of a specific embodiment of the present invention and baffle plate looks up details enlarged drawing.With reference to Fig. 3 composition graphs 2, according to a specific embodiment of the present invention, the below of described confinement ring 16 is also provided with at least one baffle plate 18, and described baffle plate 18 is parallel to described confinement ring 16 and overlapping at least partly in vertical direction with described confinement ring 16.Wherein, described baffle plate is provided with some passing aways.
Further, the area span of described baffle plate is for being greater than 3cm*3cm=9cm
2, its area at least can cover a part for the gas perforation more than or exhaust groove.。The material of described confinement ring comprises insulating material such as quartz, aluminium oxide or conductor aluminium and is coated with resistant material, as long as can ensure that current potential is floating just passable.
It should be noted that, no matter the area of described baffle plate or width how value, its number range should adjust for standard with the width of confinement ring and setting position, is applicable to described confinement ring to make described baffle plate.
Wherein, described baffle plate offer groove or bore a hole to form described passing away.According to a specific embodiment of the present invention, as shown in Fig. 4 (a), described baffle plate 18 is offered several grooves 18a.According to a change case of above-described embodiment, as shown in figure (b), described baffle plate 18 is offered several perforation 18b.
Further, described groove, width span is for being greater than 5mm, and its length can according to gas flow distribution unrestricted choice, and the area span of described perforation is for being greater than 1cm
2, so that the gas of q.s can be allowed by being advisable.
It should be noted that, above-mentioned passing away should with want the plasma density above the confinement ring that reaches to arrange for standard.Particularly, when needs increase plasma density in this region, passing away can be set in region.The dimensioned area etc. that should be appreciated that as passing away groove or perforation etc. is returned article on plasma bulk concentration and is produced quantitative impact, therefore specifically can control plasma density by arranging of above-mentioned size.
Address above, because the plasma density above confinement ring described in various factors there are differences, baffle plate provided by the present invention should be arranged at below confinement ring, and definitely, region that should be lower corresponding to the plasma density above confinement ring is arranged at below described confinement ring.
Further, described baffle plate is arranged at the mounting points below described confinement ring.
It will be appreciated by those skilled in the art that the plasma process region in plasma processing apparatus produces uneven phenomenon, its origin cause of formation is diversified.
For example, referring to Fig. 1 and Fig. 2, confinement ring is also provided with the earth terminal 17 that is connected to confinement ring 16 sometimes, and radio-frequency energy transmission can be suppressed to arrive the exhaust gas region territory of described plasma processing apparatus.But, because one end electric field being connected to earth terminal in confinement ring is comparatively speaking strong compared with other regions of confinement ring, cause plasma density also by reduction to a certain extent, therefore make the process zone A (see Fig. 1) near confinement ring region asymmetric.From space, plasma process region A presents asymmetric cloud form, particularly, is being connected with near the confinement ring of earth terminal, and its process zone A is by " picking-up ", and away near the confinement ring of earth terminal, its processing procedure district extends to below substrate always.Thus, make the substrate processing procedure speed near away from the confinement ring of earth terminal higher, and the substrate W processing procedure speed being connected with the confinement ring near zone of earth terminal is lower, causes the substrate W after processing procedure to occur homogeneity defect.Gas reason such as the asymmetric of hardware such as air flow method inequality or monolateral turnover valve (slit valve) all can cause plasma mal-distribution.
Therefore, in above-mentioned application scenarios, as shown in Figure 2, described baffle plate 18 is arranged at the coupling part being connected to described confinement ring 16 away from described earth terminal 17.Employ baffle plate provided by the invention, the asymmetry of plasma process region B is improved.
In addition, the cavity that other reasons causing process zone uneven also comprise plasma processing apparatus may not be uniform, and it must have some asymmetric.Such as, suppose such a case, when the sidewall side of chamber presents recess a little, so, the plasma that the process zone of this side region can be held is more, and concentration is just higher.In like manner, the substrate edge near this side there will be the higher situation of etch rate equally.
Therefore, for overcoming above-mentioned defect, described baffle plate should be arranged at the side (not shown) of the cavity depression of described plasma processing apparatus.
And for example, plasma processing apparatus top electrode or bottom electrode are in actual applications not necessarily on a horizontal plane, and this may not necessarily wipe feel before processing procedure.With reference to Fig. 5, the top electrode 11 ' of illustrative plasma processing unit is towards shallow decline on the right side of illustrated plasma processing apparatus, then the top electrode 11 ' of this side part and the bottom electrode 13 of its correspondence shorten apart from d1, and d1 must be less than the top electrode 11 ' of other parts and the distance of its corresponding bottom electrode 13 simultaneously.Such as, the top electrode 11 ' in diagram left side and the bottom electrode 13 of its correspondence must be greater than d1 apart from d2.Therefore, because d1 distance shortens, the electric field strength of its correspondence becomes large, and plasma accelerates flows out process zone by described confinement ring 16, causes the plasma density of this process zone to reduce.From space, plasma process region A (see Fig. 1) presents asymmetric cloud form, particularly, near the confinement ring that upper/lower electrode distance is the shortest, its process zone A is by " picking-up ", and near the confinement ring that upper/lower electrode distance d2 is longer, its processing procedure district extends to below substrate always.Therefore, the processing procedure rate reduction of corresponding substrate W especially substrate edge part Wc.In like manner, the processing procedure speed of corresponding with it substrate opposite side marginal portion Wd is higher.
In order to compensate the inhomogeneity of above-mentioned substrate processing procedure, as shown in Figure 5, described baffle plate 18 is arranged at the top electrode 11 ' of described plasma processing apparatus and bottom electrode 13 apart from larger side, also, and distance d2 side, in other words, the side of substrate edge Wd.
For another example, the setting of plasma processing apparatus vacuum pump also can cause the asymmetric appearance of plasma supporting zone.Particularly, vacuum pump generally can not be arranged at immediately below the chamber of plasma processing apparatus in the prior art, and can be arranged at the side of 1 plasma processing apparatus as shown in Figure 2, and vacuum pump 15 is arranged at diagram right side by illustrative exemplary ground.Due to vacuum pump 15 in processing procedure by with cross reacting gas and bi-product gas pump-and-treat system region B, the plasma density arranging side at vacuum pump 15 must reduce.From space, plasma process region B (see accompanying drawing 2) presents asymmetric cloud form, particularly, near the confinement ring that side is set at vacuum pump 15, its process zone B is by " picking-up ", and near the confinement ring arranged away from vacuum pump 15, its processing procedure district extends to below substrate always.Therefore, as shown in Figure 2, must reduce in the processing procedure speed of the lower substrate W part particularly substrate edge Wa of plasma density, and higher in the processing procedure speed of the substrate W part particularly substrate edge Wb of opposite side.
Therefore, described baffle plate 18 should be arranged at the side of the vacuum pump 15 away from plasma processing apparatus 1, to compensate the inhomogeneity of processing procedure.When baffle plate 18 is electrically floating states, on baffle plate 18, minority can accumulate above through the electronics of confinement ring or ion and form the sheaths (sheath) the same with substrate surface, and sheaths can provide a power upwards to charged ion.So plasma can be stoped away from the higher region of the original plasma concentration of suction port exhaust gas region to move down when there being the baffle plate 18 of band sheaths to exist, namely plasma distribution is held up there being the place of baffle plate.Except other free radical of plasma (radical) also can impact reaction speed in plasma etching, if airflow-resistive degree is crossed conference by baffle plate 18 cause new etching rate skewness weighing apparatus factor.So in order to the air flow method not affecting baffle area is so this baffle plate is band air vent hole, this baffle surface major part area will comprise hole/groove, and whole surface comprises ventilation zone area and is greater than 30%.As shown in Figure 2, employ baffle plate provided by the invention, the asymmetry of plasma process region B is improved.Because vacuum air pump causes the asymmetrically distributed principal element of rate of air sucked in required, relatively large in the region rate of air sucked in required near aspiration pump, also can stop a part of air-flow with baffle plate above or below the plasma confinement ring correspondence that aspiration pump is corresponding, finally make the throughput that flows through on whole plasma confinement ring close.Now the Main Function of baffle plate is that barrier air passes through, so baffle plate now just requires substantially not containing air vent hole/groove, or only also has minority area that air-flow can be allowed to pass through.The ventilation zone area on whole surface is less than 30%, stuffiness even completely.Then its Advantageous materials electric conducting material passes through conductor ground connection, to prevent that sheaths overslaugh plasma spreads downwards.
Fig. 6 shows the confinement ring of the plasma processing apparatus of a specific embodiment of the present invention and the structural representation of removable baffle plate, as shown in Figure 6, according to a change case of the present invention, described baffle plate 18 ' can move relative to described confinement ring in the horizontal direction, and its concrete moving direction carries out according to the illustrated direction of arrow.Baffle plate also can move at above-below direction simultaneously, because above-below direction motion also can affect the change of the distribution of air-flow and the distribution of electric field.
It should be noted that, the type of drive that the mobile required drive of above-mentioned confinement ring adopts has mature technology support in the prior art.For simplicity's sake, repeat no more herein.
Further, the type of drive of described confinement ring movement comprise adopt electric machine, hydraulic means, pneumatic shuttle drive.
It should be noted that, the type of drive existing ripe technical support in the prior art of described confinement ring movement, is simple and clear period, repeats no more herein.
Baffle plate of the present invention is about got one's things ready below ring except being arranged on plasma moveable element also can be installed above plasma confinement ring, its execution mode is identical with the application scenarios be arranged at below plasma confinement ring by baffle plate referred to above, for simplicity's sake, do not repeat them here.
Present invention also offers a kind of plasma processing apparatus, wherein, described plasma processing apparatus comprises previously described confinement ring.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. one kind is applied to the adjustable plasma confinement ring of plasma processing apparatus, wherein said plasma treatment appts comprises plasma processing region and exhaust gas region, described plasma confinement ring is between the plasma processing region and exhaust gas region of described plasma treatment appts, there is multiple gas passage the gas from process zone is flow through when described plasma confinement ring enters exhaust gas region be neutralized, it is characterized in that: the below of described confinement ring or top are also provided with at least one baffle plate, described baffle plate and described confinement ring are overlapping at least partly in vertical direction, described baffle plate is arranged at the mounting points below described confinement ring, and the described mounting points plasma density corresponded to above described confinement ring is less than other parts above described confinement ring and reaches the region being greater than 10%.
2. adjustable plasma confinement ring according to claim 1, is characterized in that, described plasma confinement ring comprises an earth point and is connected with the conductor with earth point position, and wherein said mounting points is arranged at away from described earth point.
3. adjustable plasma confinement ring according to claim 1, is characterized in that, described mounting points is arranged at the top electrode of described plasma processing apparatus and the larger side of bottom electrode distance.
4. adjustable plasma confinement ring according to claim 1, is characterized in that, described mounting points is arranged at the side of the cavity depression of described plasma processing apparatus.
5. adjustable plasma confinement ring according to claim 1, is characterized in that, described baffle plate is arranged at side away from the vacuum pump of plasma processing apparatus and electrically floating.
6. adjustable plasma confinement ring according to claim 5, is characterized in that, described baffle plate comprises the ventilation zone that area is greater than 30%.
7. adjustable plasma confinement ring according to claim 1, is characterized in that, described baffle plate can move relative to described confinement ring in the horizontal direction or in vertical direction.
8. adjustable plasma confinement ring according to claim 7, is characterized in that, the type of drive of described confinement ring movement comprises and adopts electric machine, hydraulic means, pneumatic shuttle to drive.
9. adjustable plasma confinement ring according to claim 1, is characterized in that, described baffle plate has an arc section, makes baffle surface have different distance to described plasma confinement ring.
10. adjustable plasma confinement ring according to claim 1, is characterized in that, described baffle plate area is greater than 9CM
2.
11. 1 kinds of plasma processing apparatus, is characterized in that, described plasma processing apparatus comprises the confinement ring described in any one of claim 1 to 10.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110437212.2A CN103177925B (en) | 2011-12-23 | 2011-12-23 | A kind of adjustable confinement ring for plasma processing apparatus |
| TW101143569A TW201332042A (en) | 2011-12-23 | 2012-11-21 | Adjustable confining ring for plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110437212.2A CN103177925B (en) | 2011-12-23 | 2011-12-23 | A kind of adjustable confinement ring for plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103177925A CN103177925A (en) | 2013-06-26 |
| CN103177925B true CN103177925B (en) | 2015-08-26 |
Family
ID=48637706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110437212.2A Active CN103177925B (en) | 2011-12-23 | 2011-12-23 | A kind of adjustable confinement ring for plasma processing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103177925B (en) |
| TW (1) | TW201332042A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789014B (en) * | 2014-12-26 | 2018-10-09 | 中微半导体设备(上海)有限公司 | It is a kind of to realize the plasma processing apparatus being uniformly vented |
| CN106935530B (en) * | 2015-12-31 | 2020-04-17 | 中微半导体设备(上海)股份有限公司 | Plasma etching photoresist device |
| CN109037019B (en) * | 2018-07-03 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Dry etching apparatus |
| CN111383896B (en) * | 2018-12-29 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Lining and reaction chamber |
| CN114334593B (en) * | 2020-09-29 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | Confinement ring, plasma processing device and exhaust method thereof |
| CN114639585B (en) * | 2020-12-16 | 2025-02-14 | 中微半导体设备(上海)股份有限公司 | Confinement ring assembly, plasma processing device and exhaust control method thereof |
| CN115513023A (en) * | 2021-06-23 | 2022-12-23 | 中微半导体设备(上海)股份有限公司 | Confinement ring, plasma processing apparatus and exhaust control method thereof |
| CN115954257B (en) * | 2023-03-14 | 2023-05-23 | 长鑫存储技术有限公司 | Substrate processing apparatus, gas confinement assembly, and adjustment method and adjustment apparatus therefor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100481307C (en) * | 2002-09-18 | 2009-04-22 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7972467B2 (en) * | 2003-04-17 | 2011-07-05 | Applied Materials Inc. | Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor |
| CN101150909B (en) * | 2006-09-22 | 2010-05-12 | 中微半导体设备(上海)有限公司 | Plasm restraint device |
| CN100576438C (en) * | 2006-11-15 | 2009-12-30 | 应用材料股份有限公司 | Strengthen constraint baffle plate and flow equalizer that magnetic control system plasma radial distributes |
| TWI308776B (en) * | 2006-12-27 | 2009-04-11 | Advanced Micro Fab Equip Inc | A plasma confinement apparatus |
| TWM377038U (en) * | 2009-05-15 | 2010-03-21 | Advanced Micro Fab Equip Inc | Plasma confinement device and plasma processing device using the same |
-
2011
- 2011-12-23 CN CN201110437212.2A patent/CN103177925B/en active Active
-
2012
- 2012-11-21 TW TW101143569A patent/TW201332042A/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100481307C (en) * | 2002-09-18 | 2009-04-22 | 朗姆研究公司 | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI505387B (en) | 2015-10-21 |
| TW201332042A (en) | 2013-08-01 |
| CN103177925A (en) | 2013-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103177925B (en) | A kind of adjustable confinement ring for plasma processing apparatus | |
| CN103187234B (en) | A kind of adjustable constraint device for plasma processing apparatus | |
| JP3792089B2 (en) | Plasma process equipment | |
| CN101038849B (en) | Plasma processing apparatus and method, and focus ring | |
| US20070215279A1 (en) | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component | |
| US20170250059A1 (en) | Methods and apparatuses for controlling plasma properties by controlling conductance between sub-chambers of a plasma processing chamber | |
| KR20120062896A (en) | Film formation apparatus | |
| US20090288773A1 (en) | Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes | |
| TWI448215B (en) | Apparatus for plasma processing | |
| CN105097405A (en) | Plasma processing apparatus and exhaust structure applied to same | |
| CN102421938B (en) | Surface wave plasma cvd apparatus and film forming method | |
| KR101798373B1 (en) | Dielectric window supporting structure for inductively coupled plasma processing apparatus | |
| CN102290314B (en) | Device and method for generating neutral particle beams | |
| CN101267708B (en) | Plasma processing apparatus and plasma processing method | |
| CN101086953A (en) | Semiconductor substrate processing apparatus, method, and medium | |
| US9363881B2 (en) | Plasma device and operation method of plasma device | |
| CN103367089B (en) | A kind of plasma processing apparatus with double casing | |
| CN205491411U (en) | Developments parallel -plate plasma generator | |
| JP2016015436A (en) | Etching device and etching method | |
| WO2006011336A1 (en) | High-frequency plasma processing apparatus and high-frequency plasma processing method | |
| KR101695380B1 (en) | Inductively Coupled Plasma Processing Apparatus | |
| CN104167345B (en) | Plasma treatment appts and air transporting arrangement, gas switching method | |
| JP5112773B2 (en) | Mounting table and plasma ashing processing apparatus | |
| JP2650465B2 (en) | Dry thin film processing equipment | |
| JPH09153486A (en) | Plasma processing method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |