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CN103165762A - Manufacturing method of light emitting diode - Google Patents

Manufacturing method of light emitting diode Download PDF

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Publication number
CN103165762A
CN103165762A CN2011104117608A CN201110411760A CN103165762A CN 103165762 A CN103165762 A CN 103165762A CN 2011104117608 A CN2011104117608 A CN 2011104117608A CN 201110411760 A CN201110411760 A CN 201110411760A CN 103165762 A CN103165762 A CN 103165762A
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China
Prior art keywords
module
mold
cavity
barrier layer
electrode
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CN2011104117608A
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Chinese (zh)
Inventor
林新强
张洁玲
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN2011104117608A priority Critical patent/CN103165762A/en
Priority to TW100146146A priority patent/TWI440225B/en
Publication of CN103165762A publication Critical patent/CN103165762A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

一种发光二极管的制造方法，包括以下步骤：提供引脚结构，其包括隔离的板状第一电极和第二电极；提供模具，将该模具抵合所述引脚结构的上、下表面，使该模具与引脚结构的下表面共同围成一基板腔体，并使该模具与引脚结构的上表面共同围成一第一腔体；往第一腔体内注入第一材料形成阻挡层，该阻挡层覆盖引脚结构第一电极以及第二电极的部分上表面；替换模具以使替换后的模具与引脚结构上表面成第二腔体；往基板腔体及第二腔体内注入第二材料以形成基座及反射杯；移除模具；蚀刻去除所述阻挡层以暴露被阻挡层覆盖的引脚结构的部分上表面；在该引脚结构上设置一发光元件并电连接至该第一电极和第二电极；及在发光元件上形成一封装层。

Figure 201110411760

A method for manufacturing a light-emitting diode, comprising the following steps: providing a lead structure, which includes an isolated plate-shaped first electrode and a second electrode; providing a mold, and abutting the mold against the upper and lower surfaces of the lead structure, The mold and the lower surface of the lead structure jointly form a substrate cavity, and the mold and the upper surface of the lead structure jointly form a first cavity; injecting a first material into the first cavity to form a barrier layer , the barrier layer covers part of the upper surface of the first electrode and the second electrode of the lead structure; replace the mold so that the replaced mold and the upper surface of the lead structure form a second cavity; inject into the substrate cavity and the second cavity The second material is used to form the base and the reflective cup; the mold is removed; the barrier layer is etched away to expose part of the upper surface of the lead structure covered by the barrier layer; a light-emitting element is arranged on the lead structure and electrically connected to the first electrode and the second electrode; and forming an encapsulation layer on the light emitting element.

Figure 201110411760

Description

The manufacture method of light-emitting diode
Technical field
The present invention relates to a kind of semiconductor making method, relate in particular to a kind of manufacture method of light-emitting diode.
Background technology
Light-emitting diode relies on its high light efficiency, low energy consumption, the advantage such as pollution-free, has been applied among increasing occasion, and the trend that replaces conventional light source is arranged greatly.
In the reflector that light-emitting diode generally includes pedestal, two electrodes of being combined with pedestal, be fixed on pedestal and be connected to the luminescence chip of two electrodes and the packaging plastic of packaged chip.The pedestal of light-emitting diode and reflector are normally one-body molded on electrode by embedding the injection moulding mode.This kind method first is arranged on electrode in mould, make electrode and mould fit tightly and reserve the die cavity that is used to form pedestal and reflector, then inject the fluid material in die cavity, after solidifying, the fluid material just envelopes described electrode, formation is embedded with the pedestal of electrode and the reflector that is connected with the pedestal one, and is used for successive process.
Yet, when contacting closely between mould and electrode, can leave the gap between both.Thereby the fluid material of injection easily penetrates described gap and extends to the surface of electrode, forms the burr structure that is connected with reflector after this kind has the fluid material to solidify, and affects the process rate of light-emitting diode.
Summary of the invention
In view of this, be necessary to provide a kind of manufacture method that improves the light-emitting diode yield.
A kind of manufacture method of light-emitting diode comprises the following steps: pin configuration is provided, and this pin configuration comprises tabular the first electrode and second electrode of isolation, and this pin configuration has an end face and the bottom surface relative with described end face; One first mould is provided, and this first mould supports and to close the end face of described pin configuration, and jointly surrounds one first cavity with the end face of pin configuration; Inject the first material in the first cavity and form the barrier layer, this barrier layer in the form of a ring and be crossed on described the first electrode and the second electrode; One second mould is provided, and the bottom surface of this second mould and pin configuration surrounds a substrate cavity jointly, and the end face of this second mould, pin configuration and barrier layer surround ring-type second cavity jointly near the outer surface of the end face of pin configuration; Inject the second material to form pedestal and reflector in substrate cavity and the second cavity; Remove mould; Etching is removed described barrier layer and is blocked the part upper surface of the pin configuration of layer covering with exposure; One light-emitting component is set on this pin configuration and is electrically connected to this first electrode and the second electrode; Reach and form an encapsulated layer on light-emitting component.
Above-mentioned method for manufacturing light-emitting, before forming reflector and pedestal, injection moulding forms a barrier layer on prior to pin configuration, described barrier layer is covered in the part surface of this pin configuration, make the part of this mould except die cavity and pin configuration close contact, avoid the fluid material of injection moulding to infiltrate the gap and cover pin configuration surface formation burr.In addition, described barrier layer is different from the material of reflector, thereby when removing the barrier layer after injection moulding is completed, can select not the etching solution that reacts with reflector to come etch stop layer, not only can remove the barrier layer to form the reflector on Glabrous limit, can also avoid etching solution etching reflector structure and affect the optical effect of light-emitting diode, can effectively improve the yield of product in encapsulation process.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Description of drawings
Fig. 1 is the first step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 2 is the second step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 3 is the third step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 4-5th, the 4th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 6 is the 5th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 7 is the 6th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Fig. 8 is the half-finished vertical view of light-emitting diode of being made by the 6th step shown in Figure 7.
Fig. 9 is the 7th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Figure 10 is the 8th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
Figure 11 is the 9th step schematic diagram of the manufacture method of light-emitting diode of the present invention.
The main element symbol description
Light-emitting diode 100
Pin configuration 10
The first electrode 11
The second electrode 12
Mould 20
Bed die 21
Backform 22
Groove 211
The substrate cavity 212
The first module 221
The second module 223
The top 2211
The bottom 2212
Running channel 224
The first cavity 225
The barrier layer 30
The 3rd module 226
The 4th module 227
The second cavity 228
Reflector 40
Pedestal 50
Upper surface 41
Lower surface 42
Depression 43
Light-emitting component 60
Wire 61
Encapsulated layer 70
Fluorescent material 71
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing.
The manufacture method of light-emitting diode 100 of the present invention mainly comprises following each step.
First step: as shown in Figure 1, one pin configuration 10 is provided, it comprises one first electrode 11 and one second electrode 12, and this first electrode 11 and the second electrode 12 spaces and equal rectangular tabulars, this pin configuration 10 is by metal or ITO(tin indium oxide) etc. the high material of conductance make.
Second step: as shown in Figure 2, provide a mould 20 in order to the described pin configuration 10 of covered section.This mould 20 comprises a backform 22.This backform 22 is used for to closing the upper surface of described pin configuration 10.Described backform 22 comprises one first module 221, reaches second module 223 adjacent with this first module 221.
This first module 221 comprises a top 2211 and extends to a bottom 2212 of this pin configuration 10 from these 2211 middle parts, top.Described the first module 221 is T-shape, and namely the width on this top 2211 is greater than the width of this bottom 2212.The two ends that bottom 2212 these first electrodes 11 of covering of this first module 221 and the second electrode 12 are mutual close.Be provided with running channel 224 on this top 2211.
Described the second module 223 is located on the lateral surface on first module 221 outsides and the described top 2211 of fitting.The height of this second module 223 is identical with the height of described the first module 221, the bottom surface on described the first module 221 tops 2211, the side of bottom 2212 and the second module 223 jointly enclose and form symmetrical ring-type the first cavity 225, and this running channel 224 is positioned at these the first cavity 225 tops and is communicated with this first cavity 225.
Third step: as shown in Figure 3, formed the first interior casting resin material of cavity 225 forms barrier layer 30 along described running channel 224 toward mould 20, described barrier layer 30 in the form of a ring, it is positioned at the surface of this pin configuration 10.
The 4th step: to shown in Figure 5, replace the part assembly of mould 20 to form the second cavity 228 as Fig. 4.Concrete, this mould 20 comprises a bed die 21, this bed die 21 is used for to closing the lower surface of described pin configuration 10 to carry described pin configuration 10.Described bed die 21 comprises a groove 211, and described groove 211 forms a substrate cavity 212 with the lower surface of described pin configuration 10.Described the second module 223 is removed, and at the outer surface of this first module 221, one the 3rd module 226 is set, the Outside Dimensions of described the 3rd module 226 reduces to these bottom 2212 direction sizes gradually along the first module 221 tops 2211.Another one the 4th module 227 that adds, described the 4th module 227 is tubular and is positioned at the periphery of the 3rd module 226, and it is with the 3rd module 226 intervals and complement each other to form the second cavity 228, in order to injection moulding formation reflector 40.
The 5th step: as shown in Figure 6, to this second cavity 228 and the interior injection moulding fluid of this substrate cavity 212 plastic material, this fluid plastic material fills up to solidify after the cavity of this second cavity 228 and substrate cavity 212 and becomes solid and form respectively reflector 40 and pedestal 50.Described reflector 40 comprises a upper surface 41 and a lower surface 42, and the width of upper surface 41 is less than the width of this lower surface 42, and this reflector 40 surfaces are formed with highly reflective material, and the material of this reflector 40 is different from the material on described barrier layer 30.Cover in advance the part upper surface of the first electrode 11, the second electrode 12 due to this barrier layer 30, when leaving the gap between the first electrode 11, the second electrode 12 and the 4th module 227, this fluid plastic material can not penetrate the gap between mould 20 and this pin configuration 10 and cover part surface the first electrode 11 and the second electrode 12, that be blocked layer 30 covering.Described pedestal 50 is positioned at the below of this pin configuration 10, and described reflector 40 is formed at this second cavity 228.
The 6th step: to shown in Figure 8, remove this mould 20 as Fig. 7.This pedestal 50 fills up described substrate cavity 212, end face and the upper surface flush of described pin configuration 10 at its middle part, the lower surface 42 of described reflector 40 mutually close edge to closing described barrier layer 30.
The 7th step: as shown in Figure 9, remove barrier layer 30 by modes such as etching, washings, make the surface exposed of this first electrode 11 and the second electrode 12 mutually close sides.Due to the covering effect before this barrier layer 30, described fluid plastic material does not spread to this first electrode 11 and the second electrode 12 mutual on the surface of side, therefore remove the first electrode 11 behind this barrier layer 30 and the second electrode 12 smooth surfaces without burr, and because barrier layer 30 is two kinds of unlike materials with this reflector 40, can the structure of reflector 40 not damaged during etching.Described reflector 40 encloses with this pin configuration 10 and forms a depression 43.
The 8th step: as shown in figure 10, on the surface of the second electrode 12 1 sides this first electrode 11, close, a light-emitting component 60 is set.Described light-emitting component 60 is contained in this depression 43.This light-emitting component 60 forms with this first electrode 11 and is electrically connected, and is electrically connected to this second electrode 12 by wire 61, and also namely two of this light-emitting component 60 electrodes form electric connection with the first electrode 11 and the second electrode 12 respectively.In the present embodiment, this light-emitting component 60 is LED crystal particle.In this step, also can adopt other modes, as the form of light-emitting component 60 with flip-chip (flip-chip) is fixed on pin configuration, and be electrically connected to the first electrode 11, the second electrode 12 formation by the crystal-bonding adhesive of conduction.
The 9th step: as shown in figure 11, cover on this light-emitting component 60 and form an encapsulated layer 70.This encapsulated layer 70 is filled in this depression 43 and flushes with the upper surface 41 of described reflector 40.This encapsulated layer 70 can be the transparent colloid of doping fluorescent powder 71, and this fluorescent material 71 can be one or more in garnet-base fluorescent material, silicate-base fluorescent material, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder, nitrogen oxide base fluorescent powder and nitride based fluorescent material.
Above-mentioned light-emitting diode 100 manufacture methods, before injection moulding forms reflector 40 and pedestal 50 prior to pin configuration 10 on formation one barrier layer 30, described barrier layer 30 is covered in the part surface of this pin configuration 10, make the part of this mould 20 except die cavity and pin configuration 10 close contacts, avoid the fluid material of injection moulding to infiltrate the gap and cover pin configuration 10 surface formation burr.In addition, described barrier layer 30 is different from the material of reflector 40, thereby when removing barrier layer 30 after injection moulding is completed, can select not the etching solution that reacts with reflector 40 to come etch stop layer 30, not only can remove barrier layer 30 to form the reflector 40 on Glabrous limit, can also avoid etching solution etching reflector 40 structures and affect the optical effect of light-emitting diode 100, can effectively improve the yield of product in encapsulation process.
Be noted that above-mentioned execution mode only is better embodiment of the present invention, those skilled in the art also can do other variation in spirit of the present invention.The variation that these are done according to spirit of the present invention is within all should being included in the present invention's scope required for protection.

Claims (9)

1.一种发光二极管的制造方法，包括以下步骤： 1. A method for manufacturing a light-emitting diode, comprising the following steps: 提供引脚结构，该引脚结构包括隔离的板状第一电极和第二电极，该引脚结构具有一顶面及与所述顶面相对的底面； providing a lead structure comprising isolated plate-shaped first and second electrodes, the lead structure having a top surface and a bottom surface opposite to the top surface; 提供一第一模具，该第一模具抵合所述引脚结构的顶面，并与引脚结构的顶面共同围成一第一腔体； providing a first mold, the first mold abuts against the top surface of the pin structure, and forms a first cavity together with the top surface of the pin structure; 往第一腔体内注入第一材料形成阻挡层，该阻挡层呈环状且跨设在所述第一电极和第二电极上； Injecting a first material into the first cavity to form a barrier layer, the barrier layer is annular and straddles the first electrode and the second electrode; 提供一第二模具，该第二模具与引脚结构的底面共同围成一基板腔体，该第二模具、引脚结构的顶面及阻挡层靠近引脚结构的顶面的外侧表面共同围成一环状第二腔体； A second mold is provided, and the second mold and the bottom surface of the lead structure jointly enclose a substrate cavity, and the second mold, the top surface of the lead structure and the outer surface of the barrier layer close to the top surface of the lead structure jointly enclose form a ring-shaped second cavity; 往基板腔体及第二腔体内注入第二材料以形成基座及反射杯； Injecting a second material into the substrate cavity and the second cavity to form a base and a reflection cup; 移除模具； remove the mold; 蚀刻去除所述阻挡层以暴露被阻挡层覆盖的引脚结构的部分上表面； Etching and removing the barrier layer to expose part of the upper surface of the pin structure covered by the barrier layer; 在该引脚结构上设置一发光元件并电连接至该第一电极和第二电极；及 a light emitting element is arranged on the lead structure and electrically connected to the first electrode and the second electrode; and 在发光元件上形成一封装层。 An encapsulation layer is formed on the light emitting element. 2.如权利要求1所述的发光二极管的制造方法，其特征在于：该模具包括一底模，所述底模包括一凹槽，所述凹槽抵合该引脚结构的下表面以共同形成所述基板腔体。 2. The method of manufacturing a light emitting diode according to claim 1, wherein the mold comprises a bottom mold, and the bottom mold comprises a groove, and the groove abuts against the lower surface of the lead structure to jointly The substrate cavity is formed. 3.如权利要求1所述的发光二极管的制造方法，其特征在于：该模具包括一顶模，所述顶模包括一第一模件、及位于该第一模件外侧的第二模件，所述第一模件、第二模件及引脚结构的上表面共同围设形成该第一腔体。 3. The manufacturing method of light-emitting diodes as claimed in claim 1, wherein the mold comprises a top mold, and the top mold comprises a first mold part and a second mold part positioned outside the first mold part , the upper surfaces of the first module, the second module and the pin structure jointly surround and form the first cavity. 4.如权利要求3所述的发光二极管的制造方法，其特征在于：所述第一模件呈T型，该第一模件包括一顶端及自该顶端中部向该引脚结构延伸的一底端，该顶端的宽度大于该底端的宽度，该第一模件的底端覆盖该第一电极与第二电极相互靠近的两端。 4. The manufacturing method of light emitting diode as claimed in claim 3, characterized in that: the first module is T-shaped, and the first module includes a top and a pin extending from the middle of the top to the pin structure. The bottom end, the width of the top end is greater than the width of the bottom end, the bottom end of the first module covers the two ends of the first electrode and the second electrode which are close to each other. 5.如权利要求4所述的发光二极管的制造方法，其特征在于：所述第二模件贴合所述第一模件顶端的外侧面，其高度与所述第一模件的高度相同。 5. The method of manufacturing a light-emitting diode according to claim 4, wherein the second module is attached to the outer surface of the top of the first module, and its height is the same as that of the first module . 6.如权利要求3所述的发光二极管的制造方法，其特征在于：所述顶模还包括第三模件及第四模件，该第三模件及第四模件替换该第二模件，且该第三模件、第四模件与未被阻挡层覆盖的引脚结构的上表面配合形成第二腔体。 6. The method of manufacturing a light emitting diode as claimed in claim 3, wherein the top mold further comprises a third module and a fourth module, and the third module and the fourth module replace the second mold parts, and the third module and the fourth module cooperate with the upper surface of the pin structure not covered by the barrier layer to form a second cavity. 7.如权利要求6所述的发光二极管的制造方法，其特征在于：所述第三模件环绕第一模件顶端及阻挡层并与第一模件顶端及阻挡层贴合，该第四模件呈环状设于该第三模件的外围并与第三模件相互间隔。 7. The method of manufacturing a light emitting diode according to claim 6, wherein the third module surrounds the top of the first module and the barrier layer and is attached to the top of the first module and the barrier layer, and the fourth module The module is annularly arranged on the periphery of the third module and spaced apart from the third module. 8.如权利要求1所述的发光二极管的制造方法，其特征在于：所述反射杯形成于该第二腔体，所述反射杯包括一上表面和一下表面，所述反射杯下表面贴合未被阻挡层覆盖的引脚结构上表面，且反射杯上表面的宽度小于反射杯下表面的宽度。 8. The method of manufacturing a light-emitting diode according to claim 1, wherein the reflective cup is formed in the second cavity, the reflective cup includes an upper surface and a lower surface, and the lower surface of the reflective cup is attached to the second cavity. combined with the upper surface of the lead structure not covered by the barrier layer, and the width of the upper surface of the reflective cup is smaller than the width of the lower surface of the reflective cup. 9.如权利要求8所述的发光二极管的制造方法，其特征在于：所述阻挡层形成于该第一腔体，该反射杯的下表面相互靠近的端点抵合所述阻挡层。 9 . The method of manufacturing a light-emitting diode as claimed in claim 8 , wherein the barrier layer is formed in the first cavity, and the bottom surfaces of the reflective cups are abutted against the barrier layer by ends close to each other. 10 .
CN2011104117608A 2011-12-12 2011-12-12 Manufacturing method of light emitting diode Pending CN103165762A (en)

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CN2011104117608A CN103165762A (en) 2011-12-12 2011-12-12 Manufacturing method of light emitting diode
TW100146146A TWI440225B (en) 2011-12-12 2011-12-14 Method for manufacturing light emitting diode

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Cited By (2)

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CN107275459A (en) * 2017-06-16 2017-10-20 深圳市科艺星光电科技有限公司 Potted element and its manufacture method
CN110827681A (en) * 2018-08-14 2020-02-21 三星显示有限公司 display screen

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WO2011092871A1 (en) * 2010-01-29 2011-08-04 株式会社 東芝 Led package and method for manufacturing same

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WO2011092871A1 (en) * 2010-01-29 2011-08-04 株式会社 東芝 Led package and method for manufacturing same
CN102130277A (en) * 2010-12-31 2011-07-20 昆山琉明光电有限公司 Light-emitting diode package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107275459A (en) * 2017-06-16 2017-10-20 深圳市科艺星光电科技有限公司 Potted element and its manufacture method
CN107275459B (en) * 2017-06-16 2024-02-02 万澄林置业(深圳)有限公司 Package element and manufacturing method thereof
CN110827681A (en) * 2018-08-14 2020-02-21 三星显示有限公司 display screen

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