CN103160813A - Reaction chamber and plasma processing equipment applying the same - Google Patents
Reaction chamber and plasma processing equipment applying the same Download PDFInfo
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- CN103160813A CN103160813A CN2011104245771A CN201110424577A CN103160813A CN 103160813 A CN103160813 A CN 103160813A CN 2011104245771 A CN2011104245771 A CN 2011104245771A CN 201110424577 A CN201110424577 A CN 201110424577A CN 103160813 A CN103160813 A CN 103160813A
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Abstract
Provided are a reaction chamber and plasma processing equipment applying the same. The reaction chamber comprises an outer chamber, an inner chamber and a gas delivery tube, wherein the inner chamber is arranged in the outer chamber, a gas passage is formed between the inner chamber and the outer chamber, the gas passage is communicated with an exhaust passage of the outer chamber, the gas delivery tube is arranged in the inner chamber, a plurality of gas inlets for delivering process gas to the inner chamber is arranged on the gas delivery tube and an exhaust port is arranged on the chamber wall of the inner chamber. An exhaust port adjustment unit is arranged at the position of the exhaust port to adjust the distribution of temperature in the inner chamber and to further improve the adjustability of the plasma processing equipment.
Description
Technical field
The present invention relates to the microelectronic processing technique field, particularly, relate to a kind of reaction chamber and use the plasma processing device of this reaction chamber.
Background technology
Metal organic chemical vapor deposition (Metal Organic Chemical VaporDeposition is hereinafter to be referred as MOCVD) technology is to make organo-metallic unstripped gas, hydrogenated gas or halogenation gas thermolysis and the technology that obtains film is easily controlled because it has film coating composition, plated film even compact and sticking power is good etc. that advantage is widely used in preparing various films
Fig. 1 is the structure diagram of existing a kind of MOCVD equipment.See also Fig. 1, MOCVD equipment comprises reaction chamber 1, the inner cavity chamber 11 that reaction chamber 1 comprises outer chamber 10 and is arranged on outer chamber 10 inside, the external diameter of inner cavity chamber 11 is less than the internal diameter of outer chamber 10, but thereby forming the gas passage 13 that supplied gas flows between outer chamber 10 and inner cavity chamber 11, gas passage 13 is communicated with the exhaust-duct 14 that is positioned at outer chamber 10 bottoms.Top for delivery of the induction trunk 16 autoreaction chambers 1 of process gas is stretched in inner cavity chamber 11, and being provided with a plurality of pallets 15 for the workpieces to be machined such as carrying substrates 18 on induction trunk 16, a plurality of pallets 15 arrange along the length direction interval of induction trunk 16 and are vertical with induction trunk 16.Position near the upper surface of pallet 15 on intake ducting 16 is provided with inlet mouth 17, and process gas enters in inner cavity chamber 11 by inlet mouth 17.Be provided with a plurality of venting ports 12 on the locular wall of inner cavity chamber 11, participate in reacted process gas and discharge inner cavity chamber 11 from venting port 12, then converge to exhaust-duct 14 by gas passage 13 and discharge.
In actual use, because the size of venting hole 12 is fixed, can't regulate by the temperature of 12 pairs of workpieces to be machined 18 of venting hole, this makes existing MOCVD equipment poor to the adjustability of processing parameter.
Summary of the invention
For addressing the above problem, the plasma processing device that the invention provides a kind of reaction chamber and use this reaction chamber, the size of its venting port can be regulated, thereby can assist to regulate the temperature distribution of inner cavity chamber, and then can improve the adjustability of plasma processing device.
for realizing that purpose of the present invention provides a kind of reaction chamber, comprise outer chamber, inner cavity chamber and air shooter, described inner cavity chamber is arranged in described outer chamber, and be formed with gas passage between described inner cavity chamber and described outer chamber, described gas passage is communicated with the exhaust-duct of outer chamber, described air shooter is arranged in described inner cavity chamber, be provided with on described air shooter to the inlet mouth of described inner cavity chamber delivery technology gas, be provided with venting port on the locular wall of described inner cavity chamber, wherein, be provided be used to the venting port regulon of regulating described venting port size in described venting port position.
Wherein, described venting port regulon comprises shutter and drive unit, described shutter is close to the locular wall setting of described inner cavity chamber and is positioned at described venting port position, and described drive unit drives described shutter and moves, and blocks the size of described venting port to regulate described shutter.
Wherein, described inner cavity chamber is columnar structured, and described shutter is annulus, and described drive unit is linear electric motors, and described linear electric motors drive described shutter and move on the axial direction due of described inner cavity chamber.
Wherein, described inner cavity chamber is columnar structured, described shutter is annulus, be provided with the through hole measure-alike with described venting port on described shutter, described drive unit is rotating machine, described rotating machine drives described shutter around the center rotating of described inner cavity chamber, thereby regulates the overlap ratio of described through hole and described venting port.
Wherein, be provided with the described venting port of many rows on the axial direction due of described inner cavity chamber, and the quantity of shutter is corresponding with the row of described venting port, a plurality of described shutters link together by web plate, and described drive unit drives described a plurality of shutters and moves.
Wherein, the thickness of described shutter is 1～2mm.
Wherein, be provided with a plurality of pallets for the carrying workpiece to be machined in described inner cavity chamber, a plurality of described pallets arrange at the length direction interval of described air shooter and are vertical with described air shooter, be provided with the inlet mouth corresponding with described tray number on described air shooter, be provided with the venting port corresponding with described tray number on the locular wall of described inner cavity chamber.
Preferably, on the axial direction due of described inner cavity chamber, described inlet mouth is higher than the upper surface of described pallet, and described venting port is lower than the lower surface of described pallet.
Wherein, be provided be used to the ruhmkorff coil that heats described outer chamber inside in the outside of described outer chamber, described ruhmkorff coil is connected with AC power.
The present invention also provides a kind of plasma processing device, it comprises reaction chamber, central air induction system and exhaust system, wherein, described reaction chamber has adopted above-mentioned reaction chamber provided by the invention, described central air induction system is connected with described air shooter, and described exhaust system is connected with the venting port of described outer chamber.
The present invention has following beneficial effect:
Reaction chamber provided by the invention, it arranges the venting port regulon by the position at the venting port of being close to inner cavity chamber, can regulate the size of venting port, thereby regulated the thermal losses speed of reaction chamber, and then changed the temperature distribution of reaction chamber, this has realized that plasma processing device assists the regulative mode of the temperature distribution in the conditioned reaction chamber by the size of regulating venting port, and then has improved the adjustability of plasma processing device.
Plasma processing device provided by the invention, it is by adopting reaction chamber provided by the invention, can assist the regulative mode of the temperature distribution in the conditioned reaction chamber by the size of regulating venting port, and then improve the adjustability of plasma processing device.
Description of drawings
Fig. 1 is the structure diagram of the reaction chamber of existing a kind of MOCVD equipment;
Fig. 2 a is the structure diagram of reaction chamber provided by the invention;
Fig. 2 b is the schematic diagram of first embodiment of the invention shutter;
Fig. 2 c is the connection diagram of a plurality of shutters of the present invention;
Fig. 2 d is that exhaust ports is in the partial schematic diagram of full-gear;
Fig. 2 e is that exhaust ports is in the partial schematic diagram of closing condition;
Fig. 3 a is the schematic diagram of second embodiment of the invention shutter; And
Fig. 3 b is the schematic diagram of a plurality of shutters of second embodiment of the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, reaction chamber provided by the invention and plasma processing device are illustrated in detail.
Embodiment one
Fig. 2 a is the structure diagram of reaction chamber provided by the invention.See also Fig. 2 a, reaction chamber 2 comprises columnar structured outer chamber 20 and inner cavity chamber 21 and air shooter 28, wherein, is provided with ruhmkorff coil 29 in the outside of outer chamber 20, it is connected with the AC power (not shown), in order to the inside of outer chamber 20 is heated; Inner cavity chamber 21 is arranged in outer chamber 20, but thereby be formed with the gas passage 23 that supplied gas flows between inner cavity chamber 21 and outer chamber 20, gas passage 23 is communicated with the exhaust-duct 201 that is arranged at outer chamber 20 bottoms, with so that the gas in gas passage 23 converges to exhaust-duct 201 discharges; Be provided with three row's venting ports 211 on the locular wall of inner cavity chamber 21 and along the axial direction due of inner cavity chamber 21, and each row's venting port 211 distributes evenly on the circumferential direction of inner cavity chamber 21, so that the gas uniform of inner cavity chamber 21 is discharged; The top of air shooter 28 autoreaction chambers 2 is stretched in inner cavity chamber 21 along the axis direction of inner cavity chamber 21, is arranged at intervals with three layers of inlet mouth 281 on air shooter 28 and along its length direction, is used for to the interior delivery technology gas of inner cavity chamber 21; And 27, three pallets 27 of three pallets that also are provided with to carry workpiece to be machined 26 in inner cavity chamber 21 are disposed on air shooter 28 along the length direction of air shooter 28, and vertical with air shooter 28.And, be arranged on the number of plies of the inlet mouth 281 on air shooter 28 and be arranged on the row of the venting port 211 on the locular wall of inner cavity chamber 21 all corresponding with the quantity of pallet 27.As a preferred version of the present embodiment, the position of inlet mouth 281 on air shooter 28 be near the upper surface of corresponding pallet 27, and the position of venting port 211 on the locular wall of inner cavity chamber 21 is near the lower surface of corresponding pallet 27.By inlet mouth 281 being arranged on the position near the upper surface of corresponding pallet 27, can make the surrounding diffusion of process gas along the upper surface of pallet 27 to inner cavity chamber 21, thereby increased the density that participates in the process gas of reaction, and then improved the utilization ratio of process gas, shorten the process time, improved process efficiency; By venting port 211 being arranged on the lower surface near corresponding pallet 27, can preventing that unreacted process gas from directly discharging inner cavity chamber 21 from venting port 211, thereby reduce the waste of process gas, and then reduce production cost.
Need to prove, be not limited in actual applications this, as long as inlet mouth 281 on the axial direction due of inner cavity chamber 21 higher than the upper surface of corresponding pallet 27, and venting port 211 on the axial direction due of inner cavity chamber 21 lower than the lower surface of pallet 27, all can realize purpose of the present invention.
Also need to prove, in the present embodiment, interior axial direction due along inner cavity chamber 21 is provided with three pallets 27 in inner cavity chamber 21.But the quantity of pallet 27 is not limited to this in actual applications, the quantity of pallet 27 can also for one, more than two and four, and be arranged on the number of plies of the inlet mouth 281 on air shooter 28 and be arranged on the row of the venting port 211 on the locular wall of inner cavity chamber 21 all corresponding with the quantity of pallet 27.
Fig. 2 b is the schematic diagram of first embodiment of the invention shutter.Fig. 2 c is the connection diagram of a plurality of shutters of the present invention.See also Fig. 2 b and Fig. 2 c, in the present embodiment, reaction chamber 2 also comprises the venting port regulon for the size of regulating venting port 211, the venting port regulon comprises shutter 24 and the drive unit (not shown) of moving in order to drive shutter 24, wherein, shutter 24 is an annulus, and its thickness is 1～2mm, and the height of shutter 24 is not less than the size of venting port 211, thereby makes shutter 24 can block venting port 211 fully.
In the present embodiment, be provided with three row's venting ports 211 on the locular wall of inner cavity chamber 21 and along its axial direction due, corresponding, interior axially spaced-apart along inner cavity chamber 21 is provided with three shutters 24 in inner cavity chamber 21, and, also be provided with a plurality of web plates 25 between two adjacent shutters 24, in order to three shutters 24 are linked together, thereby three shutters 24 moved simultaneously.As shown in Fig. 2 a, each shutter 24 is close to the locular wall setting of inner cavity chamber 21 and is positioned at the position of corresponding venting port 211, and the spacing between two adjacent shutters 24 equates with the spacing of adjacent two row's venting ports 211, thereby the size that can regulate equably venting port 211.The quantity that is appreciated that shutter 24 and the row of venting port 211 on being arranged on inner cavity chamber 21 equate can realize regulating the purpose of venting port size.
In the present embodiment, drive unit is linear electric motors, does simultaneously the straight line up-and-down movement in order to drive three shutters 24 along the axis of inner cavity chamber 21.During use, linear electric motors drive shutter 24 and move along the axis direction of inner cavity chamber 21 is upper and lower.Fig. 2 d is the partial schematic diagram of venting port when being maximum.Fig. 2 e is that venting port is the partial schematic diagram when closing.See also Fig. 2 d and Fig. 2 e, during higher than venting port 211, venting port 211 is maximum when the lower end of shutter 24, and this moment, inner cavity chamber 21 was maximum from the heat that venting port 211 outwards sheds, thereby the thermal losses speed of reaction chamber 2 is maximum; In the process that shutter 24 descends, venting port 211 reduces gradually, and inner cavity chamber 21 reduces gradually from the heat that venting port 211 outwards sheds, thereby the thermal losses speed of reaction chamber 2 reduces gradually; When shutter 24 dropped to its lower end lower than venting port 211, venting port 211 was closed, and this moment, inner cavity chamber 21 was minimum from the heat that venting port 211 outwards sheds, thereby the thermal losses speed of reaction chamber 2 is minimum.Regulate the size of venting port 211 by the upper and lower motion of shutter 24, thermal losses speed that can conditioned reaction chamber 2, thus regulated temperature distribution in reaction chamber 2, and then improved the adjustability of plasma processing device.
Need to prove, in the present embodiment, the row of venting port 211 is three rows, and the quantity of shutter 24 is three.But the present invention is not limited thereto, and the row of venting port 211 can be any amount, corresponding, the quantity of shutter 24 equates with the row of venting port 211.
Also need to prove, in the present embodiment, the spacing between two adjacent shutters 24 is identical with the spacing of adjacent two row's venting ports 211.But be not limited in actual applications this, the spacing of two adjacent shutters 24 also can be different, can regulate venting hole 211 sizes by shutter 24 equally, thereby reach the purpose of the temperature distribution on the axial direction due of regulating inner cavity chamber 21.
In the present embodiment, the height of shutter 24 is not less than the size of venting port 211, but is not limited in actual applications this, and the height of shutter 24 also can be less than the size of venting port 211.In other words, the present embodiment is to the not special restriction of the height of shutter 24, as long as can reach the purpose of regulating venting port 211 sizes.
Need to prove, in the present embodiment, linear electric motors drive three shutters 24 by web plate 25 and move simultaneously.But in actual applications, can also three linear electric motors be set separately for three shutters 24, to drive independently respectively three upper and lower motions of shutter 24, namely independently the sizes of three row's venting ports are regulated, thereby regulate temperature distribution on the axial direction due of inner cavity chamber 21.
Also need to prove, in the present embodiment, outer chamber 20 and inner cavity chamber 21 are columnar structured, corresponding, shutter 24 is annulus, but is not limited in actual applications this, and the structure of outer chamber 20 and inner cavity chamber 21 can also be other ring structure such as square, polygonal casing, and the structural correspondence of the structure of shutter 24 and outer chamber 20 and inner cavity chamber 21, and be close to the locular wall setting of inner cavity chamber 21.
Embodiment two
Fig. 3 a is the schematic diagram of second embodiment of the invention shutter.See also Fig. 3 a, in the present embodiment, shutter 24 is the annulus of the locular wall of being close to columnar inner cavity chamber 21, and is provided with the big or small identical through hole 241 with venting port 211.Drive unit is rotating machine, rotates around the axis of inner cavity chamber 21 in order to drive shutter 24.During use, shutter 24 carries out under the drive of rotating machine clockwise or rotates counterclockwise.When through hole 241 overlaps fully with venting port 211, venting port 211 maximums, this moment, inner cavity chamber 21 was maximum from the heat that venting port 211 outwards sheds, thus the thermal losses speed of reaction chamber 2 is maximum; In the interlaced process of through hole 241 and venting port 211, through hole 241 reduces gradually with the overlap ratio of venting port 211, and inner cavity chamber 21 reduces gradually from the heat that venting port 211 outwards sheds, thereby the thermal losses speed of reaction chamber 2 reduces gradually; When through hole 241 and venting port 211 staggered fully, venting port 211 was closed, and this moment, inner cavity chamber 21 was minimum from the heat that venting port 211 outwards sheds, and the thermal losses speed of reaction chamber 2 is minimum.Like this, regulate the size of venting port 211 by the rotation of shutter 24, thermal losses speed that can conditioned reaction chamber 2, thereby regulated the temperature distribution in reaction chamber 2, this has realized that plasma processing device comes temperature distribution in the conditioned reaction chamber by the size of regulating venting port, thereby has improved the adjustability of plasma processing device.In addition, the further feature of the second embodiment is identical with the first embodiment, repeats no more here.
Need to prove, shutter 24 can be all-in-one-piece annulus, and the quantity of through hole 241 is corresponding with the quantity of venting port 211; A plurality of shutters 24 that shutter 24 can also arrange for the axially spaced-apart along inner cavity chamber 21 are as shown in Fig. 3 b.A plurality of shutters 24 can link together by web plate 25, thereby a plurality of shutters 24 are moved simultaneously, also rotating machine can be set respectively, thereby drive independently each shutter 24, and then can regulate temperature distribution on the axis direction of inner cavity chamber 21.And the quantity of shutter 24 is corresponding with the row of venting port 211, and the quantity of the through hole 241 on each shutter 24 is corresponding with the quantity of every row's venting port 211.
In sum, the above-mentioned reaction chamber that the present embodiment provides, it arranges the venting port regulon by the position at the venting port of inner cavity chamber's inner close fitting locular wall, can regulate the size of venting port, thereby thermal losses speed that can the conditioned reaction chamber, and then the temperature distribution of having regulated reaction chamber, this has realized that plasma processing device assists the mode of the temperature distribution in the conditioned reaction chamber by the size of regulating venting port, and then has improved the adjustability of plasma processing device.
The present invention also provides a kind of plasma processing device, and it comprises reaction chamber, central air induction system and exhaust system, and wherein, the central air induction system is connected with air shooter; Exhaust system is connected with the exhaust-duct of outer chamber; The above-mentioned reaction chamber that reaction chamber has adopted the present embodiment to provide.
Plasma processing device provided by the invention, it can be assisted the mode of the temperature distribution in the conditioned reaction chamber by the size of regulating venting port, and then improve the adjustability of plasma processing device by adopting reaction chamber provided by the invention.
Be understandable that, above embodiment is only the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. reaction chamber, comprise outer chamber, inner cavity chamber and air shooter, described inner cavity chamber is arranged in described outer chamber, and be formed with gas passage between described inner cavity chamber and described outer chamber, described gas passage is communicated with the exhaust-duct of outer chamber, described air shooter is arranged in described inner cavity chamber, be provided with on described air shooter to the inlet mouth of described inner cavity chamber delivery technology gas, be provided with venting port on the locular wall of described inner cavity chamber, it is characterized in that, be provided be used to the venting port regulon of regulating described venting port size in described venting port position.
2. reaction chamber according to claim 1, it is characterized in that, described venting port regulon comprises shutter and drive unit, described shutter is close to the locular wall setting of described inner cavity chamber and is positioned at described venting port position, described drive unit drives described shutter and moves, and blocks the size of described venting port to regulate described shutter.
3. reaction chamber according to claim 2, it is characterized in that, described inner cavity chamber is columnar structured, and described shutter is annulus, described drive unit is linear electric motors, and described linear electric motors drive described shutter and move on the axial direction due of described inner cavity chamber.
4. reaction chamber according to claim 2, it is characterized in that, described inner cavity chamber is columnar structured, described shutter is annulus, be provided with the through hole measure-alike with described venting port on described shutter, described drive unit is rotating machine, and described rotating machine drives described shutter around the center rotating of described inner cavity chamber, thereby regulates the overlap ratio of described through hole and described venting port.
5. according to claim 3 or 4 described reaction chambers, it is characterized in that, be provided with the described venting port of many rows on the axial direction due of described inner cavity chamber, and the quantity of shutter is corresponding with the row of described venting port, a plurality of described shutters link together by web plate, and described drive unit drives described a plurality of shutters and moves.
6. reaction chamber according to claim 2, is characterized in that, the thickness of described shutter is 1～2mm.
7. reaction chamber according to claim 1, it is characterized in that, be provided with a plurality of pallets for the carrying workpiece to be machined in described inner cavity chamber, a plurality of described pallets arrange at the length direction interval of described air shooter and are vertical with described air shooter, be provided with the inlet mouth corresponding with described tray number on described air shooter, be provided with the venting port corresponding with described tray number on the locular wall of described inner cavity chamber.
8. reaction chamber according to claim 7, is characterized in that, on the axial direction due of described inner cavity chamber, described inlet mouth is higher than the upper surface of described pallet, and described venting port is lower than the lower surface of described pallet.
9. reaction chamber according to claim 1, is characterized in that, is provided be used to the ruhmkorff coil that heats described outer chamber inside in the outside of described outer chamber, and described ruhmkorff coil is connected with AC power.
10. plasma processing device, it comprises reaction chamber, central air induction system and exhaust system, it is characterized in that, described reaction chamber adopts the described reaction chamber of any one in claim 1-9, described central air induction system is connected with described air shooter, and described exhaust system is connected with the venting port of described outer chamber.
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| CN201110424577.1A CN103160813B (en) | 2011-12-14 | 2011-12-14 | A kind of reaction chamber and apply the plasma processing device of this reaction chamber |
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| CN201110424577.1A CN103160813B (en) | 2011-12-14 | 2011-12-14 | A kind of reaction chamber and apply the plasma processing device of this reaction chamber |
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| CN103160813B CN103160813B (en) | 2015-10-21 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538016A (en) * | 2014-12-10 | 2015-04-22 | 上海电器科学研究院 | Silencer |
| CN104681385B (en) * | 2013-12-03 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device, reaction cavity and plasma processing equipment |
| CN112159971A (en) * | 2020-09-25 | 2021-01-01 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN114990526A (en) * | 2022-06-01 | 2022-09-02 | 上海三盼半导体设备有限公司 | Large-capacity CVD equipment provided with exhaust module unit |
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| CN101288157A (en) * | 2005-10-11 | 2008-10-15 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN101849279A (en) * | 2007-09-04 | 2010-09-29 | 株式会社Eugene科技 | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
| CN102732860A (en) * | 2011-04-14 | 2012-10-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and chemical vapor deposition equipment with reaction chamber |
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| US4711197A (en) * | 1986-10-16 | 1987-12-08 | Thermco Systems, Inc. | Gas scavenger |
| CN101288157A (en) * | 2005-10-11 | 2008-10-15 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN101849279A (en) * | 2007-09-04 | 2010-09-29 | 株式会社Eugene科技 | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681385B (en) * | 2013-12-03 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device, reaction cavity and plasma processing equipment |
| CN104538016A (en) * | 2014-12-10 | 2015-04-22 | 上海电器科学研究院 | Silencer |
| CN104538016B (en) * | 2014-12-10 | 2018-03-09 | 上海电器科学研究院 | a muffler |
| CN112159971A (en) * | 2020-09-25 | 2021-01-01 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN112159971B (en) * | 2020-09-25 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN114990526A (en) * | 2022-06-01 | 2022-09-02 | 上海三盼半导体设备有限公司 | Large-capacity CVD equipment provided with exhaust module unit |
| CN114990526B (en) * | 2022-06-01 | 2024-05-28 | 上海鑫华夏半导体设备有限公司 | High capacity CVD apparatus equipped with exhaust module unit |
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| CN103160813B (en) | 2015-10-21 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |