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CN103145415A - Low-temperature sintered high-power antimony manganese-lead zirconate titanate piezoelectric ceramics - Google Patents

Low-temperature sintered high-power antimony manganese-lead zirconate titanate piezoelectric ceramics Download PDF

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CN103145415A
CN103145415A CN2012103586190A CN201210358619A CN103145415A CN 103145415 A CN103145415 A CN 103145415A CN 2012103586190 A CN2012103586190 A CN 2012103586190A CN 201210358619 A CN201210358619 A CN 201210358619A CN 103145415 A CN103145415 A CN 103145415A
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piezoelectric ceramics
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孙清池
吴涛
马卫兵
刘志华
王丽婧
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Tianjin University
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Abstract

本发明公开了一种低温烧结大功率铁电锑锰-锆钛酸铅压电陶瓷,其原料组分及其质量百分比含量为:以Pb1.04(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3+0.15wt%SrCO3+0.15wt%MnO2为基础,外加xwt.%CuO,其中x=0.05~1.5;本发明采用传统的固相合成方法,于900℃~1100℃烧结。本发明实现了低温烧结,其成分及步骤简单、易于操作、重复性好、成品率高,非常适用于制备单层或多层结构(独石结构)的压电变压器及换能器,具有很大的市场价值。

Figure 201210358619

The invention discloses a low-temperature sintered high-power ferroelectric antimony manganese-lead zirconate titanate piezoelectric ceramic, the raw material components and their mass percentage contents are: Pb 1.04 (Mn 1/3 Sb 2/3 ) 0.05 Zr 0.47 Based on Ti 0.48 O 3 +0.15wt%SrCO 3 +0.15wt%MnO 2 , plus xwt.%CuO, where x=0.05~1.5; the present invention adopts the traditional solid phase synthesis method and is sintered at 900°C~1100°C. The invention realizes low-temperature sintering, has simple components and steps, is easy to operate, has good repeatability and high yield, and is very suitable for preparing piezoelectric transformers and transducers with single-layer or multi-layer structures (monolithic structures), and has many advantages. large market value.

Figure 201210358619

Description

低温烧结大功率锑锰-锆钛酸铅压电陶瓷Low-temperature sintering high-power antimony-manganese-lead zirconate titanate piezoelectric ceramics

技术领域 technical field

本发明是关于以成分为特征的陶瓷组合物,尤其涉及一种低温烧结大功率锑锰-锆钛酸铅压电陶瓷材料。The invention relates to a ceramic composition characterized by components, in particular to a low-temperature sintered high-power antimony manganese-lead zirconate titanate piezoelectric ceramic material.

背景技术 Background technique

压电陶瓷是一种能将机械能和电能相互转化的功能陶瓷,属于无机非金属材料范畴。压电陶瓷材料由于具有优异的介电性和压电性能,且制备工艺简单、成本低,因此电子陶瓷是一种十分关键的电子信息材料,它广泛应用于换能器、振子、变压器、传感器等领域。Piezoelectric ceramics are functional ceramics that can convert mechanical energy and electrical energy, and belong to the category of inorganic non-metallic materials. Piezoelectric ceramic materials have excellent dielectric and piezoelectric properties, and the preparation process is simple and low cost. Therefore, electronic ceramics are a very key electronic information material. It is widely used in transducers, vibrators, transformers, sensors and other fields.

PZT基的压电陶瓷具有压电性能好、居里温度高、机械性能优良等特点,因此在当今的高性能压电陶瓷中占据主导的地位,但对于PZT基的压电陶瓷来说,其烧结温度大多都在1200℃以上,致使原料中的PbO会挥发,这一方面会造成陶瓷的化学组成会偏离化学计量比,严重影响压电陶瓷的性能,另一方面铅的挥发也会对人体及环境造成不良的影响。在当前的生产中,弥补铅挥发的主要方法是采用埋烧法、密封烧结法或使PbO过量,这些都不能从根本上消除PbO的挥发,抑制PbO挥发较为有效的方法是实现压电陶瓷材料的低温烧结,即将压电陶瓷材料的烧结温度降低至PbO挥发的温度以下。PZT-based piezoelectric ceramics have the characteristics of good piezoelectric performance, high Curie temperature, and excellent mechanical properties, so they occupy a dominant position in today's high-performance piezoelectric ceramics, but for PZT-based piezoelectric ceramics, its Most of the sintering temperatures are above 1200°C, causing the PbO in the raw materials to volatilize. On the one hand, the chemical composition of the ceramics will deviate from the stoichiometric ratio, which seriously affects the performance of piezoelectric ceramics. On the other hand, the volatilization of lead will also affect the human body. and adverse effects on the environment. In the current production, the main method to make up for lead volatilization is to use buried firing method, sealed sintering method or excessive PbO, none of which can fundamentally eliminate the volatilization of PbO, and the more effective method to suppress PbO volatilization is to realize piezoelectric ceramic material Low-temperature sintering, that is, reducing the sintering temperature of the piezoelectric ceramic material to below the temperature at which PbO volatilizes.

二十世纪九十年代以来,压电陶瓷元器件为了适应集成电路表面组装技术(SMT)的需要,正在向小型化、高性能、多功能和集成化的趋势发展。SMT中采用低温共烧陶瓷(LTCC)技术可以提高组装密度、缩小体积、减轻重量、增加功能、提高可靠性和性能、缩短组装周期,叠层陶瓷复合体是其研究的热点之一。目前实现叠层结构主要有两种方法,一种是先烧成单片然后再粘结成叠层结构,另一种则是多层一次烧成,采用Pt、Pd的贵金属作为内电极,但是成本昂贵,为了降低成本,叠层结构器件一般要求采用导电性能良好、价格较低的Ag作为内电极。由于Ag熔点较低,烧结温度过高会造成银离子向陶瓷层扩散,从而降低了陶瓷材料的绝缘电阻,若能实现压电陶瓷材料的低温烧结则可较好的解决这两方面的问题。Since the 1990s, piezoelectric ceramic components are developing toward miniaturization, high performance, multi-function and integration in order to meet the needs of integrated circuit surface mount technology (SMT). The use of low temperature co-fired ceramics (LTCC) technology in SMT can increase assembly density, reduce volume, reduce weight, increase functions, improve reliability and performance, and shorten assembly cycle. Laminated ceramic composites are one of the hotspots of its research. At present, there are mainly two methods to realize the laminated structure. One is to fire a single piece and then bond it into a laminated structure. The other is to fire multiple layers at one time, using Pt and Pd noble metals as internal electrodes. The cost is expensive. In order to reduce the cost, the laminated structure device generally requires the use of Ag with good conductivity and low price as the internal electrode. Due to the low melting point of Ag, too high sintering temperature will cause silver ions to diffuse to the ceramic layer, thereby reducing the insulation resistance of ceramic materials. If low-temperature sintering of piezoelectric ceramic materials can be achieved, these two problems can be better solved.

目前,实现低温烧结的主要方法有以下几种:(a)采用添加助熔剂来降低烧结温度,(b)通过改善制粉工艺来降低烧结温度,(c)采用热压法来降低烧结温度,(d)采用微波烧结降低烧结温度。其中添加助熔剂来降低烧结温度的工艺最简单,成本最低廉,是一种比较接近工业化生产的方法。通过添加低熔点的化合物在烧结初期形成液相,由于液相烧结中的晶粒重排、强化接触可以提高晶界的迁移率,充分排出气孔,从而促进烧结致密化达到降低烧结温度的目的。At present, the main methods to achieve low-temperature sintering are as follows: (a) reduce the sintering temperature by adding flux, (b) reduce the sintering temperature by improving the powder making process, (c) reduce the sintering temperature by using hot pressing, (d) Microwave sintering was used to reduce the sintering temperature. Among them, the process of adding flux to reduce the sintering temperature is the simplest and the cheapest, and it is a method close to industrial production. By adding low-melting-point compounds to form a liquid phase at the initial stage of sintering, the mobility of grain boundaries can be improved due to the rearrangement of crystal grains and enhanced contact in liquid phase sintering, and the pores can be fully discharged, thereby promoting sintering densification and reducing the sintering temperature.

本发明基于此目的,选取Pb1.04(Mn1/3Sb2/3)Zr0.47Ti0.48O3+0.15wt%SrCO3+0.15wt%MnO2压电陶瓷为研究对象,采用传统的固相反应法,选择氧化铜(CuO)作为掺杂离子,研究其对结构、性能的影响,在没有恶化其压电介电性能的前提下降低了陶瓷的烧结温度。Based on this purpose, the present invention selects Pb 1.04 (Mn 1/3 Sb 2/3 ) Zr 0.47 Ti 0.48 O 3 +0.15wt%SrCO 3 +0.15wt%MnO 2 piezoelectric ceramics as the research object, and adopts traditional solid-state reaction In this method, copper oxide (CuO) was selected as the dopant ion, and its influence on the structure and performance was studied, and the sintering temperature of the ceramic was reduced without deteriorating its piezoelectric and dielectric properties.

发明内容 Contents of the invention

本发明的目的,是采用传统的固相合成的制备方法,在现有技术的基础上进一步降低烧结温度,提供一种低的烧结温度、具有良好压电性能的锑锰-锆钛酸铅压电陶瓷。The object of the present invention is to adopt the traditional solid-phase synthesis preparation method, further reduce the sintering temperature on the basis of the prior art, and provide a low sintering temperature, antimony manganese-lead zirconate titanate piezoelectric material with good piezoelectric properties. electric ceramics.

本发明通过以下技术方案予以实现:The present invention is achieved through the following technical solutions:

低温烧结大功率铁电锑锰-锆钛酸铅压电陶瓷,其原料组分及其质量百分比含量为:以Pb1.04(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3+0.15wt%SrCO3+0.15wt%MnO2为基础,外加xwt.%CuO,其中x=0.05~1.5;Low-temperature sintering high-power ferroelectric antimony manganese-lead zirconate titanate piezoelectric ceramics, its raw material components and mass percentage content are: Pb 1.04 (Mn 1/3 Sb 2/3 ) 0.05 Zr 0.47 Ti 0.48 O 3 +0.15 wt%SrCO 3 +0.15wt%MnO 2 as the basis, plus xwt.%CuO, where x=0.05~1.5;

上述低温烧结大功率铁电锑锰-锆钛酸铅压电陶瓷的制备方法:用固相合成的方法,先将基础原料于850℃予烧,最终于900℃~1100℃烧结,保温2h。The preparation method of the above-mentioned low-temperature sintered high-power ferroelectric antimony-manganese-lead zirconate titanate piezoelectric ceramics: use the method of solid phase synthesis, first pre-sinter the basic raw materials at 850 ° C, and finally sinter at 900 ° C ~ 1100 ° C, and keep warm for 2 hours.

所述锑锰-锆钛酸压电陶瓷是单一的钙钛矿结构。The antimony manganese-zirconate titanate piezoelectric ceramic has a single perovskite structure.

所述原料为Pb3O4、ZrO2、TiO2、MnO2、Sb2O3、SrCO3和CuO。The raw materials are Pb 3 O 4 , ZrO 2 , TiO 2 , MnO 2 , Sb 2 O 3 , SrCO 3 and CuO.

本发明的有益效果,是实现了低温烧结(将PMS-PZT的烧结温度从1180℃~1240℃降低至900℃~930℃),并保持了良好的压电性能,添加物CuO单一,价格低廉,符合工业化生产的要求,较低的烧结温度抑制了PbO的挥发,与其它低温烧结相比,本发明获得的压电陶瓷性能优越,具有很大的市场价值。The beneficial effect of the present invention is to achieve low-temperature sintering (reducing the sintering temperature of PMS-PZT from 1180°C to 1240°C to 900°C to 930°C), and to maintain good piezoelectric performance, with a single additive CuO and low price , which meets the requirements of industrial production, and the lower sintering temperature suppresses the volatilization of PbO. Compared with other low-temperature sintering, the piezoelectric ceramics obtained by the present invention have superior performance and have great market value.

附图说明 Description of drawings

图1是本发明在900℃、925℃、1000℃、1100℃烧结保温2h,CuO掺杂量对PMS-PZT介电损耗tanδ的影响;Fig. 1 shows the influence of CuO doping amount on PMS-PZT dielectric loss tanδ at 900°C, 925°C, 1000°C, 1100°C for 2 hours of sintering and heat preservation;

图2是本发明在900℃、925℃、1000℃、1100℃烧结保温2h,CuO掺杂量对PMS-PZT压电系数d33的影响;Fig. 2 shows the influence of CuO doping amount on PMS-PZT piezoelectric coefficient d 33 at 900°C, 925°C, 1000°C, 1100°C sintering and heat preservation for 2h;

图3是本发明在900℃、925℃、1000℃、1100℃烧结保温2h,CuO掺杂量对PMS-PZT机电耦合系数Kp的影响;Fig. 3 is the influence of CuO doping amount on PMS-PZT electromechanical coupling coefficient Kp at 900°C, 925°C, 1000°C, 1100°C sintering and heat preservation for 2h in the present invention;

图4是本发明在900℃、925℃、1000℃、1100℃烧结保温2h,CuO掺杂量对PMS-PZT介电常数

Figure BDA00002183062100021
的影响。Fig. 4 is the present invention at 900°C, 925°C, 1000°C, 1100°C for sintering and heat preservation for 2h, the effect of CuO doping amount on the dielectric constant of PMS-PZT
Figure BDA00002183062100021
Impact.

具体实施方式 Detailed ways

本发明采用市售的化学纯原料(纯度≥99%),为Pb3O4、ZrO2、TiO2、MnO2、Sb2O3、SrCO3和CuO。The present invention uses commercially available chemically pure raw materials (purity ≥ 99%), which are Pb 3 O 4 , ZrO 2 , TiO 2 , MnO 2 , Sb 2 O 3 , SrCO 3 and CuO.

本发明低温烧结大功率锑锰-锆钛酸铅压电陶瓷的制备方法如下:The preparation method of low-temperature sintering high-power antimony manganese-lead zirconate titanate piezoelectric ceramics of the present invention is as follows:

(1)配料(1) Ingredients

以Pb1.04(Mn1/3Sb2/3)Zr0.47Ti0.48O3+0.15wt%SrCO3+0.15wt%MnO2为基础,外加xwt.%CuO,其中x=0.05~1.5,按上述配方,称取原料Pb3O4、ZrO2、TiO2、MnO2、Sb2O3、SrCO3进行混合,装入尼龙罐中,球磨介质为水和玛瑙球,球:料:水的重量比为2:1:0.5,球磨4h,转速为750转/分,将混合料放入烘箱内90℃烘干,再放入研钵内研磨,过60目筛。Based on Pb 1.04 (Mn 1/3 Sb 2/3 )Zr 0.47 Ti 0.48 O 3 +0.15wt%SrCO 3 +0.15wt%MnO 2 , plus xwt.%CuO, where x=0.05~1.5, according to the above formula , Weigh the raw materials Pb 3 O 4 , ZrO 2 , TiO 2 , MnO 2 , Sb 2 O 3 , SrCO 3 and mix them, put them into a nylon tank, the ball milling medium is water and agate balls, the weight ratio of balls:material:water The mixture is 2:1:0.5, ball milled for 4 hours, the speed is 750 rpm, the mixture is dried in an oven at 90°C, then ground in a mortar, and passed through a 60-mesh sieve.

(2)预烧(2) pre-burning

将步骤(1)研磨过筛后的粉料放入坩埚内,用玛瑙棒压实,加盖,密封,在马弗炉中以7℃/min速率升温到850℃保温2h,自然冷却到室温出炉。Put the ground and sieved powder in step (1) into the crucible, compact it with an agate rod, cover it, seal it, heat it in a muffle furnace at a rate of 7°C/min to 850°C for 2 hours, and cool it down to room temperature naturally out of the oven.

(3)二次球磨(3) Secondary ball milling

按步骤(1)的配方,取x=0.05、0.1、0.5、1、1.5,将CuO加入到步骤(2)烘干的粉料中研磨,装入球磨罐,加入适量的水,球磨4h,转速为750转/分,然后将粉料放入烘箱90℃烘干。According to the formula of step (1), take x=0.05, 0.1, 0.5, 1, 1.5, add CuO to the powder dried in step (2) for grinding, put it into a ball mill jar, add an appropriate amount of water, and ball mill for 4 hours, The rotation speed is 750 rpm, and then the powder is dried in an oven at 90°C.

(4)造粒(4) Granulation

将步骤(3)烘干的粉料在研钵中研细,过筛,加入重量浓度为7%的PVA(聚乙烯醇),充分搅拌,过筛,将粉料放入直径为35mm的不锈钢模具内,在100~120Mpa压力下压成圆柱状坯件。Grind the powder dried in step (3) in a mortar, sieve, add PVA (polyvinyl alcohol) with a weight concentration of 7%, stir well, sieve, and put the powder into a stainless steel mold with a diameter of 35mm Inside, it is pressed into a cylindrical blank under a pressure of 100-120Mpa.

(5)成型(5) Molding

将步骤(4)造粒后的圆柱状坯件静置24h,研碎、过60m筛,再将粉料放入直径为12mm的不锈钢模具中,在400Mpa压力下压成圆柱状坯件。Put the cylindrical blank after granulation in step (4) to stand for 24 hours, grind it, pass through a 60m sieve, put the powder into a stainless steel mold with a diameter of 12mm, and press it into a cylindrical blank under a pressure of 400Mpa.

(6)排胶(6) Glue removal

将步骤(5)坯件放入马弗炉中,以3℃/min的速率将坯体升温至200℃,再以1.5℃/min速率从200℃升至400℃,在400℃保温30min后,以5℃/min的速率升至650℃并保温10min,排出有机物。Put the blank in step (5) into a muffle furnace, raise the temperature of the blank to 200°C at a rate of 3°C/min, then raise the temperature from 200°C to 400°C at a rate of 1.5°C/min, and keep it at 400°C for 30 minutes , raised to 650°C at a rate of 5°C/min and held for 10 minutes to discharge organic matter.

(7)烧结(7) Sintering

将步骤(6)排胶出有机物坯件放入坩埚中,密封,用PMS-PZT粉料做埋料埋烧,升温速度为7℃/min,分别在900℃、925℃、1000℃、1100℃保温2h,随炉自然冷却至室温。Put the organic matter blanks from step (6) into the crucible, seal it, and use PMS-PZT powder as the embedding material to bury and burn. ℃ for 2 hours, and naturally cooled to room temperature with the furnace.

(8)烧电极(8) Burning electrodes

将步骤(7)烧结好的陶瓷片打磨至1mm厚,自然晾干,采用丝网印刷工艺在其上下表面涂覆银浆,置于马弗炉中7℃/min升温到735℃保温10min,自然冷却至室温。Polish the ceramic sheet sintered in step (7) to a thickness of 1mm, dry it naturally, coat the upper and lower surfaces with silver paste by screen printing process, place it in a muffle furnace and heat it up to 735°C for 10min. Naturally cool to room temperature.

(9)测试介电、压电性能。(9) Test dielectric and piezoelectric properties.

本发明具体实施例详见表1。Specific embodiments of the present invention are shown in Table 1.

表1Table 1

Figure BDA00002183062100041
Figure BDA00002183062100041

本发明具体测试手段:使用中国天津市无线电六厂的WAYNEKERR4225型LCR自动测量仪,在室温下测量试样的损耗角正切值tanδ及电容C,测量频率为1kHz,相对介电常数εr值由下式计算得出:Concrete testing means of the present invention: use the WAYNEKERR4225 type LCR automatic measuring instrument of China Tianjin Radio No. 6 Factory, measure the loss tangent tan δ and electric capacity C of sample at room temperature, measuring frequency is 1kHz, and relative permittivity ε r value is given by Calculated as follows:

ϵϵ 3333 TT ϵϵ 00 == 44 CC ×× hh ϵϵ 00 ×× ππ DD. 22

式中:ε0-真空介电常数,其值为8.854×10-12F/m;C-电容,单位为F:h-试样厚度,单位m;π-圆周率;这里取3.1416;D-试样直径,单位m。In the formula: ε 0 - vacuum dielectric constant, its value is 8.854×10 -12 F/m; C - capacitance, unit is F; h - sample thickness, unit m; π - circular ratio; here take 3.1416; D - Sample diameter, in m.

本发明依据国标GB11309-89,采用中科院声学所ZJ-3A型准静态测试仪,测试压电系数d33,其单位为pCN-lAccording to the national standard GB11309-89, the present invention adopts the ZJ-3A quasi-static tester of the Institute of Acoustics, Chinese Academy of Sciences to test the piezoelectric coefficient d 33 , the unit of which is pCN -l .

本发明中获得的机电藕合系数KP是通过谐振与反谐振频率之差Δf=fa-fr与泊松比σ综合查Kp表得到的,泊松比σ是通过下面公式计算得出的:The electromechanical coupling coefficient K P obtained in the present invention is obtained by looking up the Kp table comprehensively through the difference between resonance and anti-resonance frequency Δf=f a -f r and Poisson's ratio σ, and Poisson's ratio σ is calculated by the following formula of:

σσ == 5.3325.332 ff rr -- 1.8671.867 ff rr 11 0.60540.6054 ff rr 11 -- 1.1911.191 ff rr

fr为谐振频率,fa为反谐振频率,fr1为一次泛音谐振频率,fr、fa、fr1均采用谐振--反谐振法利用上海亚美电器厂XFG-7高频信号发生器测得。f r is the resonant frequency, f a is the anti-resonant frequency, f r1 is the primary overtone resonant frequency, f r , f a , and f r1 all use the resonant-anti-resonant method to generate high-frequency signals using the XFG-7 of Shanghai Yamei Electric Appliance Factory measured by the device.

由附图1可以看出:样品损耗随CuO掺杂量的增加表现出先降低后增加的趋势。由附图2、3、4可以看出:样品的d33、Kp和

Figure BDA00002183062100052
随着不同CuO掺杂量的变化趋势很相似,均出现先增大后减小的趋势,并都在掺杂量为0.1wt.%时取得最大值。最佳性能参数在CuO掺杂量0.1wt.%时925℃煅烧取得,分别为d33=289pC/N,kp=56%,
Figure BDA00002183062100053
tanδ=0.41%。It can be seen from Figure 1 that the sample loss shows a trend of first decreasing and then increasing with the increase of CuO doping amount. It can be seen from accompanying drawings 2, 3 and 4 that the d 33 , Kp and
Figure BDA00002183062100052
The trend of change with different CuO doping amounts is very similar, both appear to increase first and then decrease, and all reach the maximum value when the doping amount is 0.1wt.%. The best performance parameters are obtained by calcination at 925°C when the CuO doping amount is 0.1wt.%, respectively, d 33 =289pC/N, kp=56%,
Figure BDA00002183062100053
tanδ=0.41%.

应用本发明制备的压电陶瓷材料主要应用于单层或多层结构(独石结构)的压电变压器及换能器。The piezoelectric ceramic material prepared by applying the present invention is mainly used in piezoelectric transformers and transducers with a single-layer or multi-layer structure (monolithic structure).

上述对实施例的描述是便于该技术领域的普通技术人员能理解和应用本发明。熟悉本领域技术的人员显然可以容易地对这些实施例做出各种修改,并把在此说明的一般原理应用到其他实施例中而不必经过创造性的劳动。因此,本发明不限于这里的实施例,本领域技术人员根据本发明的揭示,对于本发明做出的改进和修改都应该在本发明的保护范围之内。The above description of the embodiments is to facilitate the understanding and application of the present invention by those of ordinary skill in the technical field. It is obvious that those skilled in the art can easily make various modifications to these embodiments, and apply the general principles described here to other embodiments without creative efforts. Therefore, the present invention is not limited to the embodiments herein, and improvements and modifications made by those skilled in the art according to the disclosure of the present invention should fall within the protection scope of the present invention.

Claims (5)

1. high-power ferroelectric antimony manganese-lead titanate piezoelectric ceramics of low-temperature sintering, its feed composition and mole percent level thereof are Pb 1.04(Mn 1/3Sb 2/3) 0.05Zr 0.47Ti 0.48O 3, adding on this basis mass percent is 0.15wt%SrCO 3With 0.15wt%MnO 2, then to add on the basis of the above mass percent be xwt.%CuO, wherein x=0.05~1.5.
The preparation method of the high-power ferroelectric antimony manganese-lead titanate piezoelectric ceramics of above-mentioned low-temperature sintering: adopt the method for solid phase synthesis, first basic material is given burning, 900 ℃ the most finally ~ 1100 ℃ sintering, insulation 2h in 850 ℃.
2. according to claim 1 the high-power antimony manganese-lead titanate piezoelectric ceramics of low-temperature sintering, is characterized in that, described antimony manganese-zirconium metatitanic acid piezoelectric ceramics is single perovskite structure.
3. according to claim 1 the high-power antimony manganese-lead titanate piezoelectric ceramics of low-temperature sintering, is characterized in that, described raw material is Pb 3O 4, ZrO 2, TiO 2, MnO 2, Sb 2O 3, SrCO 3And CuO.
4. according to claim 1 the high-power antimony manganese-lead titanate piezoelectric ceramics of low-temperature sintering, is characterized in that, the preferred value that adds xwt.%CuO is x=0.1.
5. according to claim 1 the high-power antimony manganese-lead titanate piezoelectric ceramics of low-temperature sintering, is characterized in that, preferred sintering temperature is 925 ℃.
CN2012103586190A 2012-09-24 2012-09-24 Low-temperature sintered high-power antimony manganese-lead zirconate titanate piezoelectric ceramics Pending CN103145415A (en)

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CN111362696A (en) * 2020-03-31 2020-07-03 贵州振华红云电子有限公司 Piezoelectric ceramic for miniature piezoelectric air pump and preparation method thereof
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