CN103122481A - Crucible component for polycrystalline silicon ingot furnace - Google Patents
Crucible component for polycrystalline silicon ingot furnace Download PDFInfo
- Publication number
- CN103122481A CN103122481A CN 201110370455 CN201110370455A CN103122481A CN 103122481 A CN103122481 A CN 103122481A CN 201110370455 CN201110370455 CN 201110370455 CN 201110370455 A CN201110370455 A CN 201110370455A CN 103122481 A CN103122481 A CN 103122481A
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- CN
- China
- Prior art keywords
- crucible
- silicon ingot
- polycrystalline silicon
- thermal insulation
- insulation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000010439 graphite Substances 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010453 quartz Substances 0.000 claims abstract description 23
- 241000209456 Plumbago Species 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052710 silicon Inorganic materials 0.000 abstract description 25
- 239000010703 silicon Substances 0.000 abstract description 25
- 239000007788 liquid Substances 0.000 abstract description 11
- 229910002804 graphite Inorganic materials 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 2
- 230000008025 crystallization Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
Abstract
The invention discloses a crucible component for a polycrystalline silicon ingot furnace. The crucible component comprises a quartz crucible and a graphite crucible which is arranged outside the quartz crucible, wherein the graphite crucible comprises a bottom plate and side plates on the periphery of the bottom plate, the bottom plate is of a net structure, a thermal insulation layer is formed on the external lower part of the graphite crucible, and a sheet is arranged outside the thermal insulation layer. Through the mode, the crucible component can guide silicon liquid flow direction in time when silicon liquid overflows from any crack of the quartz crucible, so that alarm can be timely generated; and in addition, the thermal insulation effect of the lower part of the graphite crucible is increased, the crystallization rate and internal quality of a polycrystalline silicon ingot of the polycrystalline silicon ingot furnace can also be effectively improved, and the crucible component is reasonable in structural design.
Description
Technical field
The present invention relates to field polysilicon, particularly relate to a kind of polycrystalline silicon ingot or purifying furnace crucible assembly.
Background technology
In the existing polycrystalline silicon ingot or purifying furnace that uses, the plumbago crucible that is used for the support quartz crucible is all to be made of a base plate and four blocks of side plates, and when silicon hydrorrhea stream occured, silicon liquid flowed on smooth plumbago crucible base plate everywhere, thereby can not in time find, extend the time of fire alarming of accident.
In addition, at present in the production process of sun power industry polycrystal silicon ingot, employing be the production technique of directional solidification method purification silicon ingot, the equipment that adopts claims polycrystalline ingot furnace; When producing polycrystal silicon ingot, need to be heated to upper its fusing that makes more than 1420 ℃ to the silicon material, then carry out directional freeze.In production process, the silicon material is contained in heat fused in high-purity silica pot, because quartz crucible begins to soften 1300 ℃ of left and right, generally adopt plumbago crucible to come support in the outside of quartz crucible, simultaneously also because the silicon material directly contacts and can react with graphite, so can not directly use plumbago crucible carrying silicon material.In order to guarantee the quality of polycrystal silicon ingot, quartz crucible inner surface adopts the Si coating to process usually.In material and directional freeze process, need to pass into 0.6kgf/cm
2The high-purity hydrogen of pressure is to take away impurity in the silicon material and to reduce the pollution to thermal field of silicon vapor.
Quartz crucible commonly used is of a size of 880mm * 880mm * 420mm at present, and approximately 25.4mm plumbago crucible load-bearing of thickness is adopted in the outside.Due in process of production, at first make that the silicon material melts fully in quartz crucible, then allow the silicon material of fusing from the bottom directional freeze up, optimal effect is to allow the silicon material begin synchronously to solidify from crucible bottom, make into crystal face at grade, the polycrystal silicon ingot crystal forming rate is high like this.
The common problem that exists in polycrystal silicon ingot production at present is: in the directional freeze process, the silicon material is crucible four sides and four jiaos of cooling getting soon, the crucible center is cooling slowly, this has had a strong impact on the crystal forming rate of polycrystal silicon ingot, its reason just be plumbago crucible bottom and the surrounding speed of cooling inconsistent, the outside is cooling soon, and bottom coohng gets slowly, so can not realize the outside and central synchronous directional freeze.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of polycrystalline silicon ingot or purifying furnace crucible assembly, can be when silicon liquid overflows from quartz crucible any crack, in time the flow direction of guiding silicon liquid, can also improve polycrystalline silicon ingot or purifying furnace polycrystal silicon ingot crystal forming rate and interior quality effectively.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of polycrystalline silicon ingot or purifying furnace crucible assembly is provided, comprise: quartz crucible and the plumbago crucible that is arranged on the quartz crucible outside, described plumbago crucible comprises the side plate of base plate and base plate surrounding, described base plate has reticulated structure, described plumbago crucible outer lower portion is provided with thermal insulation layer, and described thermal insulation layer arranged outside has thin plate.
In a preferred embodiment of the present invention, described reticulated structure is at least two-layer.
In a preferred embodiment of the present invention, described cancellated structure is honeycomb type.
In a preferred embodiment of the present invention, be provided with groove or hole on described thermal insulation layer.
In a preferred embodiment of the present invention, described groove or hole are high outside and low outside skewed slot or inclined hole.
In a preferred embodiment of the present invention, be provided with on described thin plate with thermal insulation layer on groove or the hole that the hole site is corresponding, shape is consistent.
In a preferred embodiment of the present invention, described groove or hole are horizontal elongated slot or slotted hole.
In a preferred embodiment of the present invention, described thermal insulation layer and thin plate are bolted on the plumbago crucible side plate.
The invention has the beneficial effects as follows: the polycrystalline silicon ingot or purifying furnace crucible assembly that the present invention discloses, can be when silicon liquid overflows from quartz crucible any crack, in time guide the flow direction of silicon liquid, thereby energy and alarm, in addition by strengthening plumbago crucible bottom heat insulation effect, can also effectively improve polycrystalline silicon ingot or purifying furnace polycrystal silicon ingot crystal forming rate and interior quality, reasonable in design.
Description of drawings
Fig. 1 is the structural representation that polycrystalline silicon ingot or purifying furnace of the present invention is used a preferred embodiment of crucible assembly;
Fig. 2 be shown in the structural representation of base plate;
In accompanying drawing, the mark of each parts is as follows: 1, side plate, 2, quartz crucible, 3, heating element, 4, the hole, 5, thin plate, 6, thermal insulation layer, 7, base plate.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made more explicit defining.
See also Fig. 1 and Fig. 2, the embodiment of the present invention comprises:
A kind of polycrystalline silicon ingot or purifying furnace crucible assembly, comprise: quartz crucible 2 and the plumbago crucible that is arranged on the quartz crucible outside, described plumbago crucible comprises the side plate 1 of base plate 7 and base plate surrounding, described base plate 7 has reticulated structure, described plumbago crucible outer lower portion is provided with thermal insulation layer 6, and described thermal insulation layer 6 arranged outside have thin plate 5.
Described base plate 7 has reticulated structure.When the crack appears in the quartz crucible 2 that supports when plumbago crucible, no matter the crack appears at any position of quartz crucible 2, due to action of gravitation, the silicon liquid that overflows all flows to base plate 7, this moment is owing to having reticulated structure on base plate 7, so base plate 7 all has the space on whole plane, so when the silicon liquid that overflows flows to base plate 7, just the space from reticulated structure flows down in time, thereby can in time flow to the warning device that is arranged on base plate 7 belows, and alarm, anti-expansion than accident.
The reticulated structure that described base plate 7 adopts is multilayer, not only can guarantee the intensity of base plate 7, and can conveniently heat quartz crucible 2.
The cancellated structure of described base plate 7 is honeycombeds, can strengthen like this intensity of base plate, also facilitates quartz crucible 2 is heated.
The top in the described plumbago crucible outside is provided with heating element 3, be used for that crystallization provides high temperature to silicon, the bottom in the described plumbago crucible outside is provided with thermal insulation layer 6, described thermal insulation layer 6 can adopt cured charcoal felt (curing graphite felt), graphite felt or other lagging material to make, it all plays insulation effect to plumbago crucible side and four jiaos, make silicon material four sides and four jiaos and center synchronous directional freeze as one man as far as possible, thereby improve crystal forming rate and the interior quality of polycrystal silicon ingot.In invention, according to design requirements, described thermal insulation layer 6 can also be arranged on the other parts in the plumbago crucible outside, and even the outside is whole.
For the heat that heating element 3 is produced can fully heat by 6 pairs of crucibles of thermal insulation layer, be provided with groove or hole 4 on thermal insulation layer 6, described groove or hole 4 are high outside and low outside skewed slot or inclined hole, thereby consistent with the direction of heating element thermal radiation propagation.
In order to reduce industrial gasses washing away insulation quilt, improve its work-ing life, the present invention is at the thin plate 5 that thermal insulation layer 6 arranged outside have carbon composite, graphite or other material to make, also should be provided with on described thin plate 5 with thermal insulation layer 6 on groove or the hole that 4 positions, hole are corresponding, shape is consistent.Described groove or hole 4 are horizontal elongated slot or slotted hole.
Described thermal insulation layer 6 and thin plate 5 are bolted on plumbago crucible side plate 1, make thermal insulation layer 6 and thin plate 5 more stable, are not easy to come off.
The polycrystalline silicon ingot or purifying furnace crucible assembly that the present invention discloses, can be when silicon liquid overflows from quartz crucible 2 any crack, in time guide the flow direction of silicon liquid, thereby energy and alarm, in addition by strengthening plumbago crucible bottom heat insulation effect, can also effectively improve polycrystalline silicon ingot or purifying furnace polycrystal silicon ingot crystal forming rate and interior quality, reasonable in design.
The above is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification sheets of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.
Claims (8)
1. polycrystalline silicon ingot or purifying furnace crucible assembly, it is characterized in that, comprise: quartz crucible and the plumbago crucible that is arranged on the quartz crucible outside, described plumbago crucible comprises the side plate of base plate and base plate surrounding, described base plate has reticulated structure, described plumbago crucible outer lower portion is provided with thermal insulation layer, and described thermal insulation layer arranged outside has thin plate.
2. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 1, is characterized in that, described reticulated structure is at least two-layer.
3. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 1, is characterized in that, described cancellated structure is honeycomb type.
4. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 1, is characterized in that, is provided with groove or hole on described thermal insulation layer.
5. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 4, is characterized in that, described groove or hole are high outside and low outside skewed slot or inclined hole.
6. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 1, is characterized in that, be provided with on described thin plate with thermal insulation layer on groove or the hole that the hole site is corresponding, shape is consistent.
7. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 6, is characterized in that, described groove or hole are horizontal elongated slot or slotted hole.
8. polycrystalline silicon ingot or purifying furnace crucible assembly according to claim 1, is characterized in that, described thermal insulation layer and thin plate are bolted on the plumbago crucible side plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370455 CN103122481A (en) | 2011-11-21 | 2011-11-21 | Crucible component for polycrystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110370455 CN103122481A (en) | 2011-11-21 | 2011-11-21 | Crucible component for polycrystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103122481A true CN103122481A (en) | 2013-05-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110370455 Pending CN103122481A (en) | 2011-11-21 | 2011-11-21 | Crucible component for polycrystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103122481A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107723792A (en) * | 2017-11-20 | 2018-02-23 | 江苏高照新能源发展有限公司 | A kind of preparation method of the efficient silicon ingots of the G8 of low-dislocation-density |
| TWI852339B (en) * | 2022-12-07 | 2024-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Crucible device, single crystal furnace device and working method thereof |
-
2011
- 2011-11-21 CN CN 201110370455 patent/CN103122481A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107723792A (en) * | 2017-11-20 | 2018-02-23 | 江苏高照新能源发展有限公司 | A kind of preparation method of the efficient silicon ingots of the G8 of low-dislocation-density |
| TWI852339B (en) * | 2022-12-07 | 2024-08-11 | 大陸商西安奕斯偉材料科技股份有限公司 | Crucible device, single crystal furnace device and working method thereof |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130529 |