CN103117219B

CN103117219B - A kind of lithographic method of controllable appearance

Info

Publication number: CN103117219B
Application number: CN201310035907.7A
Authority: CN
Inventors: 盛建明; 江成龙; 涂亮亮; 石剑舫
Original assignee: CHANGZHOU TONGTAI PHOTOELECTRIC Co Ltd
Current assignee: CHANGZHOU TONGTAI PHOTOELECTRIC Co Ltd
Priority date: 2013-01-30
Filing date: 2013-01-30
Publication date: 2015-08-26
Anticipated expiration: 2033-01-30
Also published as: CN103117219A

Abstract

The present invention relates to a kind of lithographic method of controllable appearance, utilize inductively coupled plasma (ICP) etching mode to etch material, be aided with variable ICP source power by multistep etching, that bias generator power realizes the material morphology that is etched is controlled.The method of introduction of the present invention does not need to change barrier layer character, but utilizes the performance of ICP system own, and be easy to operation than existing employing one step, adjustment barrier etch, efficiency is higher, and being expected to becomes kind of a technological means for diversified pattern etching aborning.

Description

A kind of lithographic method of controllable appearance

Technical field

The present invention relates to technical field of semiconductors, relate to a kind of ICP lithographic technique obtaining diversity pattern, realizing by regulating ICP source power, bias generator power.

Background technology

Plasma is considered to the 4th state of material except solid-state, liquid, gaseous state usually.Briefly, it is a kind of charged gas, includes a large amount of ions, electronics and neutral particle.The method of artificial acquisition plasma has many, and wherein glow discharge is most widely used, and ICP etching is exactly make use of glow discharge mode to produce plasma.Specifically, in plasm reaction cavity, produce plasma by the mode applying strong applied electric field or magnetic field to reacting gas.Extra electric field or magnetic field are supplied to the enough energy of electronics, make the atom of itself and reacting gas, molecular action, produce chemically-active particle groups such as () free radical, ion, anakmetomeres, the generation of chemically-active particle, the chemical reaction that originally need at high temperature carry out at room temperature is carried out, thus carries out the etching to material.The essential condition parameter of ICP etching system has: the kind of etching gas and component, gas flow, operating pressure, ICP source power, bias generator power (or substrate bias voltage), underlayer temperature etc.ICP etching system has that structure is simple, cost performance is high, uniformity is good, independently can control ion concentration and ion energy and the feature such as easy and simple to handle, become dry etching technology ideal at present.

Summary of the invention

The technical problem to be solved in the present invention is: in utilizing ICP to etch, the adjustable realization of ICP source power, bias generator power is etched material morphology variation; Avoid because pattern differs, to the adjustment that barrier layer is made on the one hand; Expand the application of ICP etching system in diversified pattern etching on the other hand.

The technical solution adopted in the present invention is: a kind of lithographic method of controllable appearance, the material with photoresistance pattern is sent into ICP etching machine bench and carries out patterning etching, and adjustment ICP source power and bias generator power realize multistep etching.

Adopt keep source power and substrate bias power constant until etching terminates, source power remains unchanged, three kinds of situations that bias generator power dynamics, source power and bias generator power all change realize being etched the slowly gradual change of material morphology.

The invention has the beneficial effects as follows: do not need to change barrier layer character, but utilize the performance of ICP system own, be easy to operation than existing employing one step, adjustment barrier etch, efficiency is higher, and being expected to becomes kind of a technological means for diversified pattern etching aborning.

Accompanying drawing explanation

Fig. 1 is that ICP etches getable different morphologies;

Fig. 2 by source power and bias generator power constant time obtained pattern;

Fig. 3 is obtained pattern by source power is constant with during bias generator power adjustable;

Fig. 4 be source power and bias generator power all can timing gained to pattern.

Embodiment

The present invention is further detailed explanation with preferred embodiment by reference to the accompanying drawings now.These accompanying drawings are the schematic diagram of simplification, only basic structure of the present invention are described in a schematic way, and therefore it only shows the formation relevant with the present invention.

Embodiment 1

The ICP etching apparatus used in this example is outsourcing, and ICP etches in whole process and adopts constant source power and bias generator power, and wherein source power is 1200W, and bias generator power is 600W.Flow process in example is all carried out according to actual production technique: first complete barrier layer (photoresistance) pattern process in yellow light area, then the material with photoresistance pattern is sent into ICP etching machine bench and carry out patterning etching, test under finally etched pattern being placed in scanning electron microscopy.Yellow light area photoresistance pattern process mainly comprises gluing, exposure and development three road flow process, needs to test to photoresistance pattern after wherein having developed, and picks out the qualified ICP that sends to and etches.ICP etching comprises: system stability, etching and clean three road main process, wherein ICP etching process adopts the board of outsourcing, select the processing procedure editted in advance, selective etching gas is Cl2/BCl3, and maintain source power and substrate bias power constant until etching terminate, then use scanning electron microscopy to check to etched pattern, obtain being etched material morphology for shown in Fig. 2.

Embodiment 2

This example etching process is similar to example 1, and difference is that the pattern obtained desired by this etching is different from Fig. 2, therefore have employed the change of ICP etching system power and realizes.Specifically, the source power that ICP etching process uses remains unchanged, and still use 1200W, but its bias generator power is dynamic change, changes to etch the 600W after terminating from the 450W that etching is first.The change of bias generator power is adopt in certain hour in this example, has been come, has so just related to multistep etching process, make the change of last bias generator power contain whole etching by the system of board own.Etching terminates the corresponding slice, thin piece of rear taking-up and carries out pattern inspection, under being placed in scanning electron microscopy, observing and is etched material morphology as shown in Figure 3.

Embodiment 3

This example etching process is similar to example 1, and difference is that this etching wishes that the pattern that obtains is different from Fig. 2 and Fig. 3, therefore still wants that situation by example 2 is to consider to change source power in ICP etching system and bias generator power realizes.Use for reference the tendency of figure in example 1 and example 2, the concrete mode that this example adopts is: originally the source power that ICP etching process uses is 1000W, and originally bias generator power be 600W, utilizes this power first to carry out pre-embossed erosion certain hour, modifies photoresistance; Then raise source power for 1200W according to the program parameter arranged, bias generator power reduction is 400W, keeps this power until etching process terminates.Etching terminates the corresponding slice, thin piece of rear taking-up and carries out pattern inspection, under being placed in scanning electron microscopy, observing and is etched material morphology as shown in Figure 4.

The just the specific embodiment of the present invention described in above specification, various illustrating is not construed as limiting flesh and blood of the present invention, person of an ordinary skill in the technical field after having read specification can to before described embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.

Claims

1. a lithographic method for controllable appearance, is characterized in that: the material with photoresistance pattern is sent into ICP etching machine bench and carries out patterning etching, and adjustment ICP source power and bias generator power realize multistep etching;

Described ICP source power and the adjustment mode of bias generator power are:

A, maintenance source power are 1200W and substrate bias power is that 600W is until etching terminates;

Or,

B, that source power remains 1200W is constant, bias generator power from the first 450W of etching progressively rise to etching terminate after 600W;

Or,

Originally c, source power are 1000W, and originally bias generator power be 600W, utilize this power first to carry out pre-embossed erosion certain hour, modify photoresistance; Then raise source power for 1200W according to the program parameter arranged, bias generator power reduction is 400W, keeps this power until etching process terminates.