CN103114278A - Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device - Google Patents
Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device Download PDFInfo
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- CN103114278A CN103114278A CN201310047937XA CN201310047937A CN103114278A CN 103114278 A CN103114278 A CN 103114278A CN 201310047937X A CN201310047937X A CN 201310047937XA CN 201310047937 A CN201310047937 A CN 201310047937A CN 103114278 A CN103114278 A CN 103114278A
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 26
- 239000000696 magnetic material Substances 0.000 claims abstract description 14
- 229910000831 Steel Inorganic materials 0.000 claims description 39
- 239000010959 steel Substances 0.000 claims description 39
- 230000001681 protective effect Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 230000005404 monopole Effects 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 238000007747 plating Methods 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012054 meals Nutrition 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device comprising a vacuum cavity, a microwave resonance cavity, a microwave antenna, microwave waveguides and microwave generators, wherein the microwave resonance cavity is arranged inside the vacuum cavity; the microwave antenna is assembled inside the microwave resonance cavity and axially penetrates through the microwave resonance cavity; two ends of the outer side of the vacuum cavity are respectively provided with the microwave generators; the two microwave generators are respectively connected with two ends of the microwave antenna through the microwave waveguides; a planar magnetic control plate is arranged between the vacuum cavity and the microwave resonance cavity; a sample to be plated with a film is arranged between the microwave resonance cavity and the planar magnetic control plate; and the microwave resonance cavity is internally provided with a plurality of gas spraying pipes. The planar magnetic control plate disclosed by the invention utilizes a hard magnetic material to generate a planar magnetic field to enhance the ionization efficiency of reaction gas and improve the film plating uniformity; and the planar magnetic control ECR-PECVD plasma source device has the advantages of high film plating speed and high film layer uniformity and is applicable to plating various thin films.
Description
Technical field
The present invention relates to the plasma source technical field for plasma enhanced chemical vapor deposition, specifically a kind of plane magnetic control ECR-PECVD plasma source apparatus.
Background technology
Plasma reinforced chemical vapour deposition (that is: PECVD) is a kind of well-known vacuum coating technology, and oneself is through being used decades.Use pecvd process, can be in various substrates depositing electrically conductive film and non-conductive film.
Traditional PECVD device, thus the condenser coupling activated plasma is occured in its plasma source between two parallel poles by radio-frequency power supply, therefore be called as radio frequency-PECVD (RF-PECVD).The plasma source of this kind PECVD device be difficult for obtaining homogeneity preferably in big area, and plated film speed is lower, should not be applied to the production equipment of big area, high production capacity.
The plasma source of another ECR-PECVD device adopts the coupling of microwave surface-duided wave to produce plasma body.This kind PECVD device adopts the vacuum vessel of cylindrical structure usually, microwave is introduced from an end face of cylinder, the plated film sample is positioned at an other end of cylinder, coated outside solenoid at the round shape vacuum vessel, the magnetic field of solenoid makes the electron production spin resonance, therefore is called as spectrum-PECVD (ECR-PECVD).The traditional RF-PECVD of the plated film speed ratio of ECR-PECVD device improves a lot, but still is only applicable to the production of small area short run.
Also oneself is known by those skilled in the art a kind of linear microwave PECVD technology, and is widely used in big area, high production capacity, continous way film coating apparatus.This technology adopts monopole microwave antenna feed-in microwave power in the vacuum vessel, and utilizes the silica tube of the outer sleeve of antenna to produce coaxial coupling to produce plasma body.Vacuum vessel is generally the flat rectangular structure, and microwave antenna is directly rod of a circle, the transverse crossing vacuum vessel.Microwave power is by the two ends feed-in of two microwave power supplys from antenna, and for each microwave power supply, the microwave power of its feed-in is linear attenuation along antenna axial direction, and the power of two ends feed-in is superimposed upon antenna axial direction and forms even distribution.Therefore, this kind PECVD device is called as linear microwave PECVD (LM-PECVD).In this kind PECVD device, sample moves with uniform velocity along the direction perpendicular to antenna axis, thereby obtains uniform coated in big area.
Although linear microwave PECVD device possesses good homogeneity from microwave power distributes,, the homogeneity of PECVD plated film also has much relations with the concentration distribution of reactant gases.Be applied to the production equipment of big area, high production capacity PECVD plated film, generally do the horizontal wide cut of coating film area very large (〉=10OOmm).In the coating film area of large wide cut, accomplish that reactant gases evenly distributes and is not easy, so will really obtain the Large-Area-Uniform plated film, still need and take other supplementary units.
Summary of the invention
The present invention is directed to above shortcomings in prior art, a kind of plane magnetic control ECR-PECVD plasma source apparatus is provided, mountain of the present invention microwave excited plasma, and spectrum occurs under the flat magnetic field effect.
The present invention is achieved by the following technical solutions.
A kind of plane magnetic control ECR-PECVD plasma source apparatus comprises vacuum chamber, microwave resonator, microwave antenna, microwave waveguide and microwave generator, and wherein, described microwave resonator is arranged on the inside of vacuum chamber; Described microwave antenna is assemblied in microwave resonator, and axially runs through whole microwave resonator; The place, close both ends in the described vacuum chamber outside is provided with respectively microwave generator, and described two microwave generators are connected with the two ends of microwave antenna by microwave waveguide respectively; Be provided with the plane magnetic control plate between described vacuum chamber and microwave resonator, sample to be coated is arranged between microwave resonator and plane magnetic control plate; Also be provided with some gas injection tubes in described microwave resonator.
Described microwave resonator is trench structure, and a side of microwave resonator is provided with opening, and described plane magnetic control plate is arranged on a side of microwave resonator opening, and described sample to be coated is arranged on the opening part of microwave resonator.
Be provided with the gap between described microwave resonator and plane magnetic control plate.
Described microwave resonator is metal material.
Described microwave antenna is cylindrical monopole microwave antenna, and the outside sleeve of microwave antenna has circular silica tube or vitrified pipe.
Described arbitrary gas injection tube is provided with reactant gases spout and precursor gas spout.
Described plane magnetic control plate comprises pole shoe, some magnet steel, water-cooled tube.Described some magnet steel are adsorbed on pole shoe, and described water-cooled tube is pressed on pole shoe.
Described magnet steel is 3, comprises two both sides magnet steel and 1 central magnet steel, and described both sides magnet steel is separately positioned on the dual-side edge of pole shoe, and described central magnet steel is arranged on the mid-way between the magnet steel of both sides.
Described plane magnetic control plate also comprises protective guard, and described pole shoe, some magnet steel and water-cooled tube all are arranged on the inside of protective guard.
Described pole shoe is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard is non-magnetic material.
Plane magnetic control ECR-PECVD plasma source apparatus provided by the invention, in the coating film area of linear microwave plasma source, fitting plane magnetic control plate, this plane magnetic control plate uses hard magnetic material to produce flat magnetic field, make electronics issue to be conigenous at the action of a magnetic field and revolve resonance, thereby play intensified response ionisation of gas efficient, improve the inhomogeneity effect of plated film, have the advantage of high plated film speed, high membrane uniformity concurrently, be applicable to being coated with of various films.
Description of drawings
Fig. 1 is the axial sectional structure of the present invention;
Fig. 2 is radial section structure of the present invention;
Fig. 3 is plane magnetic control plate structure schematic diagram of the present invention;
In figure: 1 is vacuum chamber, and 2 is microwave resonator, and 3 is microwave antenna; 4 is silica tube, and 5 is microwave waveguide, and 6 is microwave generator; 7 is the precursor gas spout, and 8 is the reactant gases spout, and 9 is sample to be coated; 10 is the plane magnetic control plate, and 11 is magnetic field, and 101 is pole shoe; 102 is central magnet steel, and 103 is the both sides magnet steel, and 104 is water-cooled tube; 105 is protective guard, and 106 is magnetic line of force.
Embodiment
The below elaborates to embodiments of the invention: the present embodiment row that spouts under take technical solution of the present invention as prerequisite is implemented, and provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As depicted in figs. 1 and 2, the plane magnetic control ECR-PECVD plasma source apparatus of the present embodiment, comprise vacuum chamber 1, microwave resonator 2, microwave antenna 3, microwave waveguide 5 and microwave generator 6, wherein, described microwave resonator 2 is arranged on the inside of vacuum chamber 1; Described microwave antenna 3 is assemblied in microwave resonator 2, and axially runs through whole microwave resonator 2; The place, close both ends in described vacuum chamber 1 outside is provided with respectively microwave generator 6, and described two microwave generators 6 are connected by the two ends of microwave waveguide 5 with microwave antenna 3 respectively; Be provided with plane magnetic control plate 10 between described vacuum chamber 1 and microwave resonator 2, sample 9 to be coated is arranged between microwave resonator 2 and plane magnetic control plate 10; Also be provided with some gas injection tubes in described microwave resonator 2.
Further, described microwave resonator 2 is poor type structure, and a side of microwave resonator 2 is provided with opening, and described plane magnetic control meal 10 is arranged on a side of microwave resonator 2 openings, and described sample 9 to be coated is arranged on the opening part of microwave resonator 2.
Further, be provided with certain gap between described microwave resonator 2 and plane magnetic control plate 10.
Further, described microwave resonator 2 is metal material.
Further, described microwave antenna 3 is cylindrical monopole microwave antenna, and its outside sleeve has circular silica tube or vitrified pipe.
Further, described arbitrary gas injection tube is provided with reactant gases spout 8 and precursor gas spout 7.
Be specially, keep certain gaseous tension by vacuum system in vacuum chamber 1, be generally several handkerchiefs to the hundreds of handkerchief, reactant gases by gas injection tube to the interior injection of microwave resonator 2, the power that microwave generator 6 sends is launched by microwave antenna 3 by microwave waveguide 5, in the microwave resonator 2 that microwave power is limited in being made by metallic substance, gas is by microwave electromagnetic field excitation generation glow discharge, produce plasma body, be excited gas molecule or ion generation chemical reaction, the solid matter of generation forms films at sample 9 surface depositions to be coated.The formed magnetic field 11 of plane magnetic control plate makes the electronics generation spin resonance in plasma body, has strengthened the activation efficiency of gas molecule.Simultaneously, the charged ion in plasma body is for the helical movement in magnetic field, and reactant gases is produced stirring action, makes the concentration distribution of gas more even.From the microwave power supply of microwave antenna one end feed-in, under the effect of silica tube outer wall surface ripple, be linear attenuation; After the microwave power stack of two ends feed-in, be evenly distributed on the microwave antenna axis direction.Sample to be coated is made uniform motion on the direction perpendicular to the microwave antenna axis, thereby obtains uniform depositional coating.More than the microwave antenna length of present embodiment and the horizontal amplitude of sedimentation tank can reach 10OOmn, more than namely the wide cut of product can reach 10OOmm; Because coating process is realized at the volley, thereby the not restriction in principle of product length direction.Plane magnetic control ECR-PECVD plasma source apparatus in present embodiment is fit to the plated film of the product of big area product or wide cut band shape very much.
Further, as shown in Figure 3, described plane magnetic control plate 10 comprises pole shoe 101, some magnet steel, water-cooled tube 104, and described some magnet steel are adsorbed on pole shoe 101, and described water-cooled tube 104 is pressed on pole shoe 101.
Further, described magnet steel is 3, comprises two both sides magnet steel 103 and 1 central magnet steel 102, and described both sides magnet steel 103 is separately positioned on the dual-side edge of pole shoe 101, and described central magnet steel 102 is arranged on the mid-way between both sides magnet steel 103.
Further, described plane magnetic control plate 10 also comprises protective guard 105, and described pole shoe 101, some magnet steel and water-cooled tube 104 all are arranged on the inside of protective guard 105.
Further, described pole shoe 101 is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard 105 is non-magnetic material.
Be specially, the pole shoe 101 of soft magnetic materials making arranged as the base plate of plane magnetic control plate; Central authorities' magnet steel 102 and both sides magnet steel 103 are adsorbed on pole shoe 101, and use suitable mode to position; Magnet steel adopts hard magnetic material, can be the materials such as ferrite, neodymium iron boron, three brills, and magnet steel magnetizes to the intensity that can make the electronics generation spin resonance in resonator cavity; Water-cooled tube 104 is pressed on pole shoe 101, pole shoe and magnet steel is carried out cooling, prevents that magnet steel from high temperature demagnetizing; Protective guard 105 protection magnet steel are not subjected to the pollution of Coating Materials, play simultaneously certain heat-blocking action, and protective guard is made of non-magnetic materials such as stainless steels, can make magnetic field pass through protective guard undampedly; Magnet steel 102 and 103 and the configuration structure of pole shoe forms the magnetic line of force 106 of schematic structure at the working face of plane magnetic control meal.When this plane magnetic control plate is applied in ECR-PECVD plasma source apparatus shown in Figure 1, when in plasma body, the charged ion of disordered motion enters the effective magnetic field scope of plane magnetic control plate, its direction of motion changes, and is for the helical movement in magnetic field, plays the effect of stirring; Simultaneously, charged ion in magnetic field, is made the gas concentration in the effective magnetic field scope relatively high by the part local, can improve plated film speed.
Above specific embodiments of the invention are described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (10)
1. a plane magnetic control ECR-PECVD plasma source apparatus, is characterized in that, comprises vacuum chamber, microwave resonator, microwave antenna, microwave waveguide and microwave generator, and wherein, described microwave resonator is arranged on the inside of vacuum chamber; Described microwave antenna is assemblied in microwave resonator, and axially runs through whole microwave resonator; The place, close both ends in the described vacuum chamber outside is provided with respectively microwave generator, and described two microwave generators are connected with the two ends of microwave antenna by microwave waveguide respectively; Be provided with the plane magnetic control plate between described vacuum chamber and microwave resonator, sample to be coated is arranged between microwave resonator and plane magnetic control plate; Also be provided with some gas injection tubes in described microwave resonator.
2. plane magnetic control ECR-PECVD plasma source apparatus according to claim 1, it is characterized in that, described microwave resonator is trench structure, one side of microwave resonator is provided with opening, described plane magnetic control plate is arranged on a side of microwave resonator opening, and described sample to be coated is arranged on the opening part of microwave resonator.
3. plane magnetic control ECR-PECVD plasma source apparatus according to claim 2, is characterized in that, is provided with the gap between described microwave resonator and plane magnetic control plate.
4. plane magnetic control ECR-PECVD plasma source apparatus according to claim 1, is characterized in that, described microwave resonator is metal material.
5. plane magnetic control ECR-PECVD plasma source apparatus according to claim 1, is characterized in that, described microwave antenna is cylindrical monopole microwave antenna, and the outside sleeve of microwave antenna has circular silica tube or vitrified pipe.
6. plane magnetic control ECR-PECVD plasma source apparatus according to claim 1, is characterized in that, described arbitrary gas injection tube is provided with reactant gases spout and precursor gas spout.
7. the described plane magnetic control ECR-PECVD of any one plasma source apparatus according to claim 1 to 6, it is characterized in that, described plane magnetic control plate comprises pole shoe, some magnet steel, water-cooled tube, and described some magnet steel are adsorbed on pole shoe, and described water-cooled tube is pressed on pole shoe.
8. plane magnetic control ECR-PECVD plasma source apparatus according to claim 7, it is characterized in that, described magnet steel is three, comprise two both sides magnet steel and a central magnet steel, described both sides magnet steel is separately positioned on the dual-side edge of pole shoe, and described central magnet steel is arranged on the mid-way between the magnetic hand hay cutter of both sides.
9. plane magnetic control ECR-PECVD plasma source apparatus according to claim 7, is characterized in that, described plane magnetic control plate also comprises protective guard, and described pole shoe, some magnet steel and water-cooled tube all are arranged on the inside of protective guard.
10. plane magnetic control ECR-PECVD plasma source apparatus according to claim 9, is characterized in that, described pole shoe is soft magnetic materials, and described magnet steel is hard magnetic material, and described protective guard is non-magnetic material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310047937.XA CN103114278B (en) | 2013-02-06 | 2013-02-06 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
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| CN201310047937.XA CN103114278B (en) | 2013-02-06 | 2013-02-06 | Planar magnetic control ECR-PECVD (Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition) plasma source device |
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| CN103114278A true CN103114278A (en) | 2013-05-22 |
| CN103114278B CN103114278B (en) | 2014-12-24 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
| CN107475692A (en) * | 2017-08-14 | 2017-12-15 | 甘志银 | A kind of diamond thin microwave plasma CVD method and device |
| CN109302791A (en) * | 2018-10-26 | 2019-02-01 | 中国科学院合肥物质科学研究院 | Microwave Antenna Controlling Magnetically Enhanced Linear Plasma Source Generation System |
| CN110234195A (en) * | 2019-07-18 | 2019-09-13 | 中国科学技术大学 | Resonant cavity type ecr plasma source device and method |
| CN111916329A (en) * | 2019-05-08 | 2020-11-10 | 德利比特有限责任公司 | ECR ion source and method of operating an ECR ion source |
| CN113025998A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105088196A (en) * | 2015-08-26 | 2015-11-25 | 中国科学院等离子体物理研究所 | Large-area and high-density microwave plasma generating device |
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| CN110234195B (en) * | 2019-07-18 | 2024-12-31 | 中国科学技术大学 | Resonant cavity ECR plasma source device and method |
| CN113025998A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
| CN113025998B (en) * | 2019-12-24 | 2023-09-01 | 广东众元半导体科技有限公司 | Substrate table for diamond film microwave plasma chemical vapor deposition |
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Inventor after: Xia Shiwei Inventor after: Wu Changchuan Inventor after: Yuan Xiao Inventor before: Xia Shiwei Inventor before: Wu Changchuan |
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Free format text: CORRECT: INVENTOR; FROM: XIA SHIWEI WU CHANGCHUAN TO: XIA SHIWEI WU CHANGCHUAN YUAN XIAO |
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Granted publication date: 20141224 Termination date: 20170206 |
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| CF01 | Termination of patent right due to non-payment of annual fee |