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CN103109366B - Semiconductor module - Google Patents

Semiconductor module Download PDF

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Publication number
CN103109366B
CN103109366B CN201180030939.7A CN201180030939A CN103109366B CN 103109366 B CN103109366 B CN 103109366B CN 201180030939 A CN201180030939 A CN 201180030939A CN 103109366 B CN103109366 B CN 103109366B
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electrode
electrode plate
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semiconductor device
semiconductor module
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CN103109366A (en
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今井诚
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Denso Corp
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Toyota Motor Corp
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    • H—ELECTRICITY
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    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Abstract

本发明提供一种半导体模块，其能够通过简单的布线来实现连接。该半导体模块的半导体装置具有：半导体基板、被形成在半导体基板的一侧表面上的第一电极、以及被形成在半导体基板的与所述一侧表面相反的表面上的第二电极。半导体模块具有：第一电极板，其与第一电极相接；第二电极板，其与第二电极相接；第一布线部件，其以与第一电极板绝缘的状态贯穿第一电极板，并与第二电极板相连接。通过向第一电极板以及第二电极板施加对半导体装置进行加压的压力，从而使第一电极板、半导体装置以及第二电极板相互固定。

The present invention provides a semiconductor module capable of being connected by simple wiring. The semiconductor device of this semiconductor module has a semiconductor substrate, a first electrode formed on one side surface of the semiconductor substrate, and a second electrode formed on a surface of the semiconductor substrate opposite to the one side surface. The semiconductor module has: a first electrode plate in contact with the first electrode; a second electrode plate in contact with the second electrode; and a first wiring member penetrating through the first electrode plate in a state of being insulated from the first electrode plate. , and connected to the second electrode plate. The first electrode plate, the semiconductor device, and the second electrode plate are fixed to each other by applying a pressure that presses the semiconductor device to the first electrode plate and the second electrode plate.

Description

半导体模块semiconductor module

技术领域technical field

本说明书所公开的技术涉及一种半导体模块。The technology disclosed in this specification relates to a semiconductor module.

背景技术Background technique

当半导体装置发热时，半导体装置和其周围的部件（焊锡、布线等）将发生热膨胀。因各个部件的热膨胀率的不同，从而使应力施加在半导体装置上。这种应力使半导体装置的寿命缩短。When a semiconductor device generates heat, the semiconductor device and its surrounding components (solder, wiring, etc.) will thermally expand. Stress is applied to the semiconductor device due to the difference in the coefficient of thermal expansion of each component. Such stress shortens the lifetime of the semiconductor device.

发明内容Contents of the invention

发明所要解决的课题The problem to be solved by the invention

为了降低上述的应力，研究一种在不使用通过焊锡等的焊接材料而进行的接合的条件下，使半导体装置与布线相连接的方法。例如，在日本专利公开公报H9-252067号（以下，称为专利文献1）中，公开了一种如下的半导体模块，即，通过使半导体装置与各个电极板层叠并对其进行加压，从而将半导体装置与各个电极板连接在一起。但是，在该半导体模块中，阳极板被配置于半导体模块的下表面上，而阴极板被配置于半导体模块的上表面上。因此，在将该半导体模块安装到设备上时，需要分别将布线连接于半导体模块的上表面侧（即，阴极板侧）和半导体模块的下表面侧（即，阳极板侧）。即，在将该半导体模块安装到设备上时，需要复杂的布线。因此，在本说明书中，提供一种能够通过更加简单的布线而安装到设备上的半导体模块。In order to reduce the above-mentioned stress, a method of connecting a semiconductor device to wiring without using a bonding material such as solder has been studied. For example, Japanese Patent Laid-Open Publication No. H9-252067 (hereinafter referred to as Patent Document 1) discloses a semiconductor module in which a semiconductor device is stacked on each electrode plate and pressed, thereby The semiconductor devices are connected together with the respective electrode plates. However, in this semiconductor module, the anode plate is arranged on the lower surface of the semiconductor module, and the cathode plate is arranged on the upper surface of the semiconductor module. Therefore, when mounting the semiconductor module on a device, wiring needs to be connected to the upper surface side (ie, cathode plate side) of the semiconductor module and the lower surface side (ie, anode plate side) of the semiconductor module, respectively. That is, complicated wiring is required when mounting the semiconductor module on a device. Therefore, in this specification, there is provided a semiconductor module that can be mounted on a device with simpler wiring.

用于解决课题的方法method used to solve the problem

本说明书所公开的半导体模块具有：半导体装置、第一电极板、第二电极板、第一布线部件。半导体装置具有半导体基板、被形成在半导体基板的一侧表面上的第一电极、以及被形成在半导体基板的与所述一侧表面相反的表面上的第二电极。第一电极板与第一电极相接。第二电极板与第二电极相接。第一布线部件以与第一电极板绝缘的状态贯穿第一电极板，并与第二电极板相连接。通过向第一电极板以及第二电极板施加对半导体装置进行加压的压力，从而使第一电极板、半导体装置以及第二电极板相互固定。A semiconductor module disclosed in this specification includes a semiconductor device, a first electrode plate, a second electrode plate, and a first wiring member. A semiconductor device has a semiconductor substrate, a first electrode formed on one side surface of the semiconductor substrate, and a second electrode formed on a surface of the semiconductor substrate opposite to the one side surface. The first electrode plate is in contact with the first electrode. The second electrode plate is in contact with the second electrode. The first wiring member penetrates the first electrode plate while being insulated from the first electrode plate, and is connected to the second electrode plate. The first electrode plate, the semiconductor device, and the second electrode plate are fixed to each other by applying a pressure for pressing the semiconductor device to the first electrode plate and the second electrode plate.

在该半导体模块中通过压力而使第一电极板、半导体装置、以及第二电极板相互连接。在该半导体模块中，由于未使用通过焊料而进行的接合，因此在半导体装置发热时，应力不易施加于半导体装置上。此外，第二电极板与贯穿第一电极板的第一布线部件连接。因此，在第一电极板侧，不仅可以设置相对于第一电极板的布线，还可以设置相对于第二电极板的布线。因此，在将该半导体模块安装到设备上时，能够通过更加简单的布线来实现连接。In the semiconductor module, the first electrode plate, the semiconductor device, and the second electrode plate are connected to each other by pressure. Since this semiconductor module does not use solder bonding, stress is less likely to be applied to the semiconductor device when the semiconductor device generates heat. In addition, the second electrode plate is connected to the first wiring member penetrating through the first electrode plate. Therefore, on the first electrode plate side, not only wiring to the first electrode plate but also wiring to the second electrode plate can be provided. Therefore, when the semiconductor module is mounted on a device, connection can be realized with simpler wiring.

在上述的半导体模块中，优选为，还具有：筒体，其包围半导体装置和第二电极板，并被固定在第一电极板上，且在外周面或内周面上形成有第一螺纹槽；罩，其上形成有第二螺纹槽，并且通过第二螺纹槽与第一螺纹槽卡合从而被固定在筒体上，且朝向半导体装置而对第二电极板进行加压。In the above-mentioned semiconductor module, it is preferable to further include: a cylindrical body that surrounds the semiconductor device and the second electrode plate, is fixed on the first electrode plate, and has a first screw thread formed on the outer peripheral surface or the inner peripheral surface. The groove; the cover, on which the second thread groove is formed, and the second thread groove is engaged with the first thread groove so as to be fixed on the cylindrical body and pressurize the second electrode plate toward the semiconductor device.

另外，罩既可以与第二电极板直接接触而朝向半导体装置对第二电极板进行加压，也可以隔着其他的部件而朝向半导体装置对第二电极板进行加压。In addition, the cover may directly contact the second electrode plate to press the second electrode plate toward the semiconductor device, or may press the second electrode plate toward the semiconductor device through another member.

该半导体模块中，通过使罩进行旋转而使第二螺纹槽与第一螺纹槽卡合，从而能够将罩和筒体组装在一起。由于相对于第二电极板的布线通过第一布线部件而贯穿第一电极板并向外侧被引出，因此无需穿过罩而设置相对于第二电极的布线。因此，即使采用使罩进行旋转的组装方式，在使罩进行旋转时布线部件也不会造成阻碍。此外，通过这种结构，通过使罩进行旋转，从而能够通过罩而朝向半导体装置对第二电极板进行加压。即，通过将罩安装于筒体上，从而能够使第一电极板、半导体装置、以及第二电极板相互固定。因此，该半导体模块能够容易地进行组装。In this semiconductor module, the cover and the cylindrical body can be assembled together by rotating the cover to engage the second thread groove with the first thread groove. Since the wiring for the second electrode plate passes through the first electrode plate through the first wiring member and is drawn out, it is not necessary to provide the wiring for the second electrode through the cover. Therefore, even if the cover is rotated in an assembly method, the wiring member does not hinder the rotation of the cover. Moreover, with such a configuration, by rotating the cover, the second electrode plate can be pressurized toward the semiconductor device through the cover. That is, by attaching the cover to the cylindrical body, the first electrode plate, the semiconductor device, and the second electrode plate can be fixed to each other. Therefore, the semiconductor module can be easily assembled.

在上述的半导体模块中，优选为，在罩上固定有冷却器。In the semiconductor module described above, preferably, a cooler is fixed to the cover.

由于如上所述那样无需在罩上设置布线，因此能够理想地对罩和冷却器进行连接。因此，能够理想地对半导体装置进行冷却。Since it is not necessary to provide wiring on the cover as described above, it is possible to ideally connect the cover and the cooler. Therefore, the semiconductor device can be ideally cooled.

在上述的半导体模块中，优选为，在半导体装置的所述一侧表面上还形成有第三电极，所述半导体模块还具有第二布线部件，所述第二布线部件以与第一电极板绝缘的状态贯穿第一电极板，并与第三电极相连接。In the above-mentioned semiconductor module, preferably, a third electrode is further formed on the one side surface of the semiconductor device, and the semiconductor module further has a second wiring member connected to the first electrode plate. The insulating state passes through the first electrode plate and is connected with the third electrode.

根据这种结构，能够向第一电极板侧引出相对于第三电极的布线。因此，能够在第一电极板侧设置相对于第三电极的布线。According to such a configuration, wiring for the third electrode can be drawn out to the first electrode plate side. Therefore, wiring for the third electrode can be provided on the first electrode plate side.

附图说明Description of drawings

图1为第一实施例的半导体模块10的简要剖视图。FIG. 1 is a schematic cross-sectional view of a semiconductor module 10 of the first embodiment.

图2为表示沿着图1中的箭头标记A1观察半导体模块10时的、半导体装置20、母线30的平板部30a和贯穿布线部30b、绝缘板80、第一电极板40的筒部40b之间的位置关系的图。2 is a view showing the semiconductor device 20, the flat plate portion 30a of the bus bar 30, the through wiring portion 30b, the insulating plate 80, and the cylindrical portion 40b of the first electrode plate 40 when the semiconductor module 10 is viewed along the arrow mark A1 in FIG. A diagram of the relationship between positions.

图3为半导体模块10的组装工序的说明图。FIG. 3 is an explanatory diagram of an assembly process of the semiconductor module 10 .

图4为第一实施例的第一改变例的半导体模块的简要剖视图。4 is a schematic cross-sectional view of a semiconductor module according to a first modified example of the first embodiment.

图5为第一实施例的第二改变例的半导体模块的简要剖视图。5 is a schematic cross-sectional view of a semiconductor module according to a second modified example of the first embodiment.

图6为第一实施例的第三改变例的半导体模块的简要剖视图。6 is a schematic cross-sectional view of a semiconductor module according to a third modified example of the first embodiment.

图7为第二实施例的半导体模块100的简要剖视图。FIG. 7 is a schematic cross-sectional view of the semiconductor module 100 of the second embodiment.

图8为表示沿着图7中的箭头标记A2观察半导体模块100时的、半导体装置20、罩150、外壳140、螺栓162的位置关系的图。FIG. 8 is a diagram showing the positional relationship of the semiconductor device 20 , the cover 150 , the case 140 , and the bolts 162 when the semiconductor module 100 is viewed along arrow A2 in FIG. 7 .

具体实施方式Detailed ways

（第一实施例）(first embodiment)

图1所示的半导体模块10为在外壳40和罩50内收纳了半导体装置20的组件。The semiconductor module 10 shown in FIG. 1 is a package in which a semiconductor device 20 is accommodated in a case 40 and a cover 50 .

外壳40由金属构成。外壳40具有平板部40a和筒部40b。平板部40a被形成为大致平面状。如图1、2所示，筒部40b被形成为，中心轴以相对于平板部40a而垂直的方式延伸的圆筒形状。筒部40b被固定于平板部40a上。筒部40b的外周面上，形成有螺纹槽40c。The housing 40 is made of metal. The housing 40 has a flat plate portion 40a and a cylindrical portion 40b. The flat plate portion 40a is formed in a substantially planar shape. As shown in FIGS. 1 and 2 , the cylindrical portion 40b is formed in a cylindrical shape in which a central axis extends perpendicular to the flat plate portion 40a. The cylindrical portion 40b is fixed to the flat plate portion 40a. A screw groove 40c is formed on the outer peripheral surface of the cylindrical portion 40b.

在筒部40b的内侧的平板部40a上，设置有金属板84、半导体装置20、金属板82、母线30、绝缘板80、销90。The metal plate 84 , the semiconductor device 20 , the metal plate 82 , the bus bar 30 , the insulating plate 80 , and the pin 90 are provided on the flat plate portion 40 a inside the cylindrical portion 40 b.

金属板84被设置于平板部40a上。金属板84由锡等较软的金属构成。The metal plate 84 is provided on the flat plate portion 40a. The metal plate 84 is made of soft metal such as tin.

在金属板84上设置有半导体装置20。半导体装置20具有由碳化硅（SiC）构成的半导体基板24。在半导体基板24上，形成有MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor：金属氧化层半导体场效晶体管）。半导体基板24的下表面上，形成有MOSFET的源极电极26、以及多个MOSFET的栅电极28。如图2所示，半导体基板24为长方形。多个栅电极28沿着半导体基板24的一条长边而并排设置。如图1所示，半导体基板24的上表面上形成有MOSFET的漏极电极22。半导体装置20以源极电极26与金属板84接触的方式，而设置于金属板84上。各个栅电极28不与金属板84接触。The semiconductor device 20 is provided on the metal plate 84 . The semiconductor device 20 has a semiconductor substrate 24 made of silicon carbide (SiC). A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor: Metal-Oxide-Semiconductor Field-Effect Transistor) is formed on the semiconductor substrate 24 . On the lower surface of the semiconductor substrate 24, a source electrode 26 of a MOSFET and gate electrodes 28 of a plurality of MOSFETs are formed. As shown in FIG. 2 , the semiconductor substrate 24 has a rectangular shape. A plurality of gate electrodes 28 are arranged side by side along one long side of the semiconductor substrate 24 . As shown in FIG. 1 , the drain electrode 22 of the MOSFET is formed on the upper surface of the semiconductor substrate 24 . The semiconductor device 20 is provided on the metal plate 84 so that the source electrode 26 is in contact with the metal plate 84 . Each gate electrode 28 is not in contact with the metal plate 84 .

在外壳40的平板部40a上，于与半导体装置20的栅电极28对置的位置处，形成有将平板部40a从上表面贯穿至下表面的贯穿孔94。贯穿孔94沿着多个栅电极28并排设置的方向延伸。即，以与全部栅电极28对置的方式，在俯视观察时具有大致长方形形状的一个贯穿孔94被形成于平板部40a上。在贯穿孔94内固定有绝缘部件92。绝缘部件92由聚苯硫醚（PPS）等的树脂材料构成。贯穿孔94通过绝缘部件92而被堵塞。在与栅电极28对置的位置处的绝缘部件92上，固定有金属制的销90。另外，虽然在图1中，仅图示了一个销90，但在与各个栅电极28对置的各位置处，分别固定有一个销90。即，在绝缘部件92上固定有多个销90。各个销90贯穿绝缘部件92。因此，各个销90的上端位于平板部40a的上侧，而各个销90的下端位于平板部40a的下侧。各个销90的与平板部40a相比靠上侧的部分90a为，发生弹性变形的弹簧部。各个弹簧部90a以弯曲的状态与所对应的栅电极28接触。各个销90通过绝缘部件92而与外壳40的平板部40a绝缘。On the flat plate portion 40 a of the case 40 , at a position facing the gate electrode 28 of the semiconductor device 20 , a through hole 94 penetrating the flat plate portion 40 a from the upper surface to the lower surface is formed. The through hole 94 extends along the direction in which the plurality of gate electrodes 28 are arranged side by side. That is, one through hole 94 having a substantially rectangular shape in plan view is formed in the flat plate portion 40 a so as to face all the gate electrodes 28 . An insulating member 92 is fixed in the through hole 94 . The insulating member 92 is made of a resin material such as polyphenylene sulfide (PPS). The through hole 94 is blocked by the insulating member 92 . A metal pin 90 is fixed to the insulating member 92 at a position facing the gate electrode 28 . In addition, although only one pin 90 is shown in FIG. 1 , one pin 90 is fixed to each position facing each gate electrode 28 . That is, a plurality of pins 90 are fixed to the insulating member 92 . Each pin 90 penetrates an insulating member 92 . Therefore, the upper end of each pin 90 is located on the upper side of the flat plate portion 40a, and the lower end of each pin 90 is located on the lower side of the flat plate portion 40a. A portion 90a above the flat plate portion 40a of each pin 90 is a spring portion elastically deformed. Each spring portion 90 a is in contact with the corresponding gate electrode 28 in a bent state. Each pin 90 is insulated from the flat plate portion 40 a of the case 40 by an insulating member 92 .

金属板82被设置于半导体装置20上。金属板82由锡等较软的金属构成。The metal plate 82 is provided on the semiconductor device 20 . The metal plate 82 is made of soft metal such as tin.

母线30为通过弯折金属制的平板而构成的部件。母线30具有平板部30a、贯穿布线部30b、和外侧布线部30c。平板部30a被形成为大致平面状，并被设置于金属板82上。贯穿布线部30b从平板部30a起向下方延伸。在外壳40的平板部40a上，于不与半导体装置20对置的位置处，形成有贯穿孔96。贯穿布线部30b穿过贯穿孔96而延伸至平板部40a的下侧。在贯穿孔96内，固定有绝缘部件88。绝缘部件88将贯穿孔96封闭。贯穿布线部30b被固定于绝缘部件88内，且通过绝缘部件88而与平板部40a绝缘。外侧布线部30c从贯穿布线部30b的下端起向侧方延伸。外侧布线部30c在与平板部40a的下侧，以与平板部40a平行的方式而延伸。The bus bar 30 is a member formed by bending a flat metal plate. The bus bar 30 has a flat plate portion 30a, a through wiring portion 30b, and an outer wiring portion 30c. The flat plate portion 30 a is formed in a substantially planar shape, and is provided on the metal plate 82 . The through wiring portion 30b extends downward from the flat plate portion 30a. A through hole 96 is formed at a position not facing the semiconductor device 20 in the flat plate portion 40 a of the housing 40 . The through wiring portion 30b extends to the lower side of the flat plate portion 40a through the through hole 96 . In the through hole 96, the insulating member 88 is fixed. The insulating member 88 closes the through hole 96 . The through wiring portion 30 b is fixed inside the insulating member 88 and is insulated from the flat plate portion 40 a by the insulating member 88 . The outer wiring portion 30c extends laterally from the lower end of the through wiring portion 30b. The outer wiring portion 30c extends below the flat plate portion 40a so as to be parallel to the flat plate portion 40a.

绝缘板80被设置于母线30的平板部30a上。绝缘板80由氮化铝（AlN）等绝缘体构成。The insulating plate 80 is provided on the flat plate portion 30 a of the bus bar 30 . The insulating plate 80 is made of an insulator such as aluminum nitride (AlN).

罩50由金属构成。罩50的外表面上被实施了绝缘涂装。罩50具有圆筒形状的侧壁部50b、和将该圆筒形状的中心孔的一端封闭的平板部50a。即，罩50具备杯形形状。侧壁部50b的内周面上形成有螺纹槽50c。罩50的螺纹槽50c与外壳40的螺纹槽40c卡合。即，利用螺纹槽40c、50c，而使罩50与外壳40连结。罩50的平板部50a的下表面与绝缘板80相接。即，由金属板84、半导体装置20、金属板82、母线30、绝缘板80构成的层叠体，通过罩50的平板部50a和外壳40的平板部40a而被夹持。罩50相对于外壳40以较高的扭矩而被连结。因此，所述层叠体通过平板部50a和平板部40a而被加压。通过该压力，而使构成所述层叠体的各个部件相互固定。另外，外壳40的平板部40a和金属板84之间的接触部分、金属板84和半导体装置20的源极电极26之间的接触部分、半导体装置20的漏极电极22和金属板82之间的接触部分、金属板82和母线30的平板部30a之间的接触部分、以及销90和半导体装置20的栅电极28之间的接触部分，未通过焊锡等焊料而被接合。因此，当从外壳40上拆下罩50时，能够使所述层叠体的各个部件彼此分离。The cover 50 is made of metal. The outer surface of the cover 50 is given insulating coating. The cover 50 has a cylindrical side wall portion 50b and a flat plate portion 50a closing one end of the cylindrical center hole. That is, the cover 50 has a cup shape. A screw groove 50c is formed on the inner peripheral surface of the side wall portion 50b. The screw groove 50c of the cover 50 is engaged with the screw groove 40c of the housing 40 . That is, the cover 50 and the housing 40 are connected by the screw grooves 40c and 50c. The lower surface of the flat plate portion 50 a of the cover 50 is in contact with the insulating plate 80 . That is, the laminated body composed of metal plate 84 , semiconductor device 20 , metal plate 82 , bus bar 30 , and insulating plate 80 is sandwiched by flat plate portion 50 a of cover 50 and flat plate portion 40 a of case 40 . The cover 50 is connected to the housing 40 with high torque. Therefore, the laminated body is pressurized by the flat plate portion 50a and the flat plate portion 40a. The respective members constituting the laminate are fixed to each other by this pressure. In addition, the contact portion between the flat plate portion 40 a of the housing 40 and the metal plate 84 , the contact portion between the metal plate 84 and the source electrode 26 of the semiconductor device 20 , and the contact portion between the drain electrode 22 of the semiconductor device 20 and the metal plate 82 The contact portion between the metal plate 82 and the flat plate portion 30a of the bus bar 30, and the contact portion between the pin 90 and the gate electrode 28 of the semiconductor device 20 are not joined by solder such as solder. Therefore, when the cover 50 is detached from the case 40, the respective components of the laminate can be separated from each other.

在罩50的平板部50a的上表面上，设置有绝缘片70。在绝缘片70的上表面上，设置有冷却器60。冷却器60为液体循环式冷却器。另外，在罩50和绝缘片70之间的接触部分、以及绝缘片70和冷却器60之间的接触部分上，涂布有润滑脂。由此，降低了冷却器60和罩50之间的热阻抗。On the upper surface of the flat plate portion 50a of the cover 50, an insulating sheet 70 is provided. On the upper surface of the insulating sheet 70, the cooler 60 is provided. The cooler 60 is a liquid circulation cooler. In addition, grease is applied to the contact portion between the cover 50 and the insulating sheet 70 and the contact portion between the insulating sheet 70 and the cooler 60 . Thereby, thermal resistance between the cooler 60 and the cover 50 is reduced.

如以上所进行的说明，在该半导体模块10中，与位于半导体基板24的下表面侧的源极电极26相对应的布线，通过外壳40的平板部40a而被构成。此外，作为与位于半导体基板24的上表面侧的漏极电极22相对应的布线的母线30，贯穿外壳40的平板部40a而向平板部40a的下侧被引出。此外，作为与栅电极28相对应的布线的销90，贯穿外壳40的平板部40a而向平板部40a的下侧被引出。因此，能够将相对于平板部40a（即，源极电极26）的外部布线、相对于母线30（即，漏极电极22）的外部布线、以及相对于销90（即，栅电极28）的外部布线，设置在半导体模块10的下表面侧。因此，在罩50的上表面上，未设置有外部布线。由于在罩50的上表面上不存在外部布线，因此能够使罩50的上表面整体隔着绝缘片70而与冷却器60连接。因此，能够通过冷却器60而理想地对半导体装置20进行冷却。此外，通过以这种方式将相对于各个电极的布线汇集在半导体模块10的下表面侧，从而能够降低这些布线之间的电感。此外，在该半导体模块10中，半导体装置20通过压力而相对于周围的部件被固定，并且半导体装置20和周围的部件未通过钎焊等方式而被接合。因此，在因半导体装置20发热而使半导体装置20与其周围的部件发生热膨胀时，应力不易施加在半导体装置20上。因此，该半导体模块10的寿命较长。As described above, in the semiconductor module 10 , the wiring corresponding to the source electrode 26 located on the lower surface side of the semiconductor substrate 24 is formed through the flat plate portion 40 a of the case 40 . In addition, the bus bar 30 , which is wiring corresponding to the drain electrode 22 located on the upper surface side of the semiconductor substrate 24 , penetrates the flat plate portion 40 a of the case 40 and is drawn out to the lower side of the flat plate portion 40 a. In addition, a pin 90 serving as wiring corresponding to the gate electrode 28 penetrates through the flat plate portion 40 a of the case 40 and is drawn out to the lower side of the flat plate portion 40 a. Therefore, the external wiring with respect to the flat plate portion 40 a (that is, the source electrode 26 ), the external wiring with respect to the bus bar 30 (that is, the drain electrode 22 ), and the external wiring with respect to the pin 90 (that is, the gate electrode 28 ) can be connected. The external wiring is provided on the lower surface side of the semiconductor module 10 . Therefore, no external wiring is provided on the upper surface of the cover 50 . Since no external wiring exists on the upper surface of the cover 50 , the entire upper surface of the cover 50 can be connected to the cooler 60 via the insulating sheet 70 . Therefore, the semiconductor device 20 can be ideally cooled by the cooler 60 . In addition, by gathering the wirings with respect to the respective electrodes on the lower surface side of the semiconductor module 10 in this way, it is possible to reduce the inductance between these wirings. In addition, in this semiconductor module 10 , the semiconductor device 20 is fixed to surrounding components by pressure, and the semiconductor device 20 and the surrounding components are not joined by soldering or the like. Therefore, when the semiconductor device 20 and its surrounding components thermally expand due to heat generated by the semiconductor device 20 , stress is less likely to be applied to the semiconductor device 20 . Therefore, the lifetime of the semiconductor module 10 is long.

此外，在该半导体模块10中，如图2所示，半导体装置20的平面形状为长方形。此外，沿着半导体装置20的一个长边，并排设置有多个栅电极28。此外，在半导体装置20的相反的长边附近，母线30的贯穿布线部30b贯穿外壳40的平板部40a。根据这种配置，如图2所示，能够将筒部40b内的母线30的平面形状设定为大致正方形，从而能够更加宽敞地利用筒部40b内的区域。In addition, in this semiconductor module 10 , as shown in FIG. 2 , the planar shape of the semiconductor device 20 is a rectangle. In addition, along one long side of the semiconductor device 20, a plurality of gate electrodes 28 are arranged side by side. Further, in the vicinity of the opposite long sides of the semiconductor device 20 , the through wiring portion 30 b of the bus bar 30 penetrates the flat plate portion 40 a of the case 40 . According to this arrangement, as shown in FIG. 2 , the planar shape of the bus bar 30 in the cylindrical portion 40 b can be set to be substantially square, and the area in the cylindrical portion 40 b can be more widely used.

接下来，对半导体模块10的制造方法进行说明。首先，在外壳40的平板部40a上装载金属板84。接下来，将多个销90和绝缘部件92一体化而形成的部件设置于平板部40a的贯穿孔94内。接下来，在金属板84上装载半导体装置20。此时，使源极电极26与金属板84接触，并使各个栅电极28与所对应的销90接触。接下来，在半导体装置20上装载金属板82。接下来，如图3所示，对母线30和绝缘部件88一体化而形成的部件进行设置。另外，在该阶段，母线30具有L字形的截面形状，而未形成图1中的外侧布线部30c（从绝缘部件88的下侧起折弯的部分）。此处，将母线30的贯穿布线部30b插入到外壳40的贯穿孔96内，直到绝缘部件88被设置于贯穿孔96内。此外，使母线30的平板部30a与金属板82接触。接下来，在母线30的平板部30a上装载绝缘板80。接下来，通过使罩50的螺纹槽50c与外壳40的螺纹槽40c卡合，从而将罩50固定在外壳40上。当通过使罩50绕其中心轴进行旋转从而使罩50向下侧移动时，罩50的平板部50a将与绝缘板80接触。之后，当使罩50进一步旋转时，罩50的平板部50a将朝向半导体装置20而对绝缘板80进行加压。由此，被罩50的平板部50a和外壳40的平板部40a夹持的层叠体（即，金属板84、半导体装置20、金属板82、母线30的平板部30a、以及绝缘板80），在其层叠方向上而被加压。由此，层叠体的各个部件被相互固定。Next, a method of manufacturing the semiconductor module 10 will be described. First, the metal plate 84 is mounted on the flat plate portion 40 a of the casing 40 . Next, a member formed by integrating the plurality of pins 90 and the insulating member 92 is installed in the through hole 94 of the flat plate portion 40a. Next, the semiconductor device 20 is mounted on the metal plate 84 . At this time, the source electrode 26 is brought into contact with the metal plate 84 , and each gate electrode 28 is brought into contact with the corresponding pin 90 . Next, the metal plate 82 is mounted on the semiconductor device 20 . Next, as shown in FIG. 3 , components formed integrally with the bus bar 30 and the insulating member 88 are provided. In addition, at this stage, the bus bar 30 has an L-shaped cross-sectional shape, and the outer wiring portion 30 c (portion bent from the lower side of the insulating member 88 ) in FIG. 1 is not formed. Here, the through-wiring portion 30 b of the bus bar 30 is inserted into the through-hole 96 of the case 40 until the insulating member 88 is installed in the through-hole 96 . In addition, the flat plate portion 30 a of the bus bar 30 is brought into contact with the metal plate 82 . Next, the insulating plate 80 is mounted on the flat plate portion 30 a of the bus bar 30 . Next, the cover 50 is fixed to the housing 40 by engaging the screw groove 50 c of the cover 50 with the screw groove 40 c of the housing 40 . When the cover 50 is moved downward by rotating the cover 50 around its central axis, the flat plate portion 50 a of the cover 50 comes into contact with the insulating plate 80 . Thereafter, when the cover 50 is further rotated, the flat plate portion 50 a of the cover 50 presses the insulating plate 80 toward the semiconductor device 20 . Thus, the laminated body (that is, the metal plate 84, the semiconductor device 20, the metal plate 82, the flat plate portion 30a of the bus bar 30, and the insulating plate 80) sandwiched between the flat plate portion 50a of the cover 50 and the flat plate portion 40a of the case 40, It is pressed in the stacking direction. Thus, the respective components of the laminate are fixed to each other.

另外，金属板84与邻接的源极电极26和外壳40的平板部40a相比较软。因此，当层叠体被加压时，金属板84的上表面将配合源极电极26的表面形状而发生塑性变形，从而金属板84与源极电极26紧贴。同样地，当层叠体被加压时，金属板84的下表面将配合平板部40a的表面形状而发生塑性变形，从而金属板84与平板部40a紧贴。由此，源极电极26和平板部40a可靠地被连接。In addition, the metal plate 84 is softer than the adjacent source electrode 26 and the flat plate portion 40 a of the case 40 . Therefore, when the laminate is pressed, the upper surface of the metal plate 84 is plastically deformed in accordance with the surface shape of the source electrode 26 , so that the metal plate 84 is in close contact with the source electrode 26 . Similarly, when the laminate is pressed, the lower surface of the metal plate 84 is plastically deformed in accordance with the surface shape of the flat plate portion 40a, so that the metal plate 84 is in close contact with the flat plate portion 40a. Thereby, the source electrode 26 and the flat plate part 40a are reliably connected.

此外，金属板82与邻接的漏极电极22和母线30的平板部30a相比较软。因此，当层叠体被加压时，金属板82的下表面将配合漏极电极22的表面形状而发生塑性变形，从而金属板82与漏极电极22紧贴。同样地，当层叠体被加压时，金属板82的上表面将配合平板部30a的表面形状而发生塑性变形，从而金属板82与平板部30a紧贴。由此，漏极电极22与平板部30a可靠地被电连接。In addition, the metal plate 82 is softer than the adjacent drain electrode 22 and the flat plate portion 30 a of the bus bar 30 . Therefore, when the laminate is pressed, the lower surface of the metal plate 82 is plastically deformed in accordance with the surface shape of the drain electrode 22 , so that the metal plate 82 is in close contact with the drain electrode 22 . Similarly, when the laminate is pressed, the upper surface of the metal plate 82 is plastically deformed in accordance with the surface shape of the flat plate portion 30a, so that the metal plate 82 is in close contact with the flat plate portion 30a. Thereby, the drain electrode 22 and the flat plate portion 30a are reliably electrically connected.

此外，当层叠体被加压时，销90的弹簧部90a将发生挠曲。由此，在销90和栅电极28之间施加有适当的压力，从而销90和栅电极28可靠地被连接。Furthermore, when the laminated body is pressurized, the spring portion 90a of the pin 90 will be deflected. Accordingly, an appropriate pressure is applied between the pin 90 and the gate electrode 28 , and the pin 90 and the gate electrode 28 are reliably connected.

将罩50固定在外壳40上之后，将母线30的下侧的部分折弯，从而形成外侧布线部30c。之后，通过隔着绝缘片70而将冷却器60安装在罩50上，从而完成图1所示的半导体模块10。After fixing the cover 50 to the case 40, the lower portion of the bus bar 30 is bent to form the outer wiring portion 30c. Thereafter, the semiconductor module 10 shown in FIG. 1 is completed by attaching the cooler 60 to the cover 50 through the insulating sheet 70 .

在该半导体模块10中，相对于半导体装置20的布线未贯穿罩50。因此，能够在组装时使罩50自由地进行旋转。因此，能够通过使螺纹槽40c和螺纹槽50c卡合，从而将罩50安装在外壳40上。此外，能够利用该螺纹构造，而通过罩50来对所述层叠体进行加压。因此，该半导体模块10能够容易地进行组装。In this semiconductor module 10 , wiring to the semiconductor device 20 does not penetrate the cover 50 . Therefore, the cover 50 can be freely rotated during assembly. Therefore, the cover 50 can be attached to the housing 40 by engaging the thread groove 40c and the thread groove 50c. In addition, using this thread structure, the laminated body can be pressurized through the cover 50 . Therefore, the semiconductor module 10 can be easily assembled.

另外，在第一实施例的半导体模块10中，通过外壳40的平板部40a和金属板84而构成了第一电极板（与源极电极26相接的电极板）。此外，通过母线30的平板部30a和金属板82而构成了第二电极板（与漏极电极22相接的电极板）。此外，通过母线30的贯穿布线部30b而构成了第一布线部（以与第一电极板绝缘的状态贯穿第一电极板，并与第二电极板连接的布线部）。此外，通过外壳40的筒部40b而构成了如下的筒体，该筒体包围半导体装置和第二电极板，并被固定在第一电极板上，且在外周面上形成有第一螺纹槽。此外，通过罩50而构成了如下的罩，该罩上形成有第二螺纹槽，并且通过第二螺纹槽与第一螺纹槽卡合从而被固定在筒体上，且朝向半导体装置而对第二电极板（经由绝缘板80）进行加压。此外，通过销90而构成了如下的第二布线部件，该第二布线部件以与第一电极板绝缘的状态贯穿第一电极板，并与第三电极（栅电极）连接。In addition, in the semiconductor module 10 of the first embodiment, the first electrode plate (the electrode plate in contact with the source electrode 26 ) is constituted by the flat plate portion 40 a of the case 40 and the metal plate 84 . In addition, the flat plate portion 30 a of the bus bar 30 and the metal plate 82 constitute a second electrode plate (an electrode plate in contact with the drain electrode 22 ). In addition, a first wiring portion (a wiring portion that penetrates the first electrode plate while being insulated from the first electrode plate and is connected to the second electrode plate) is formed by the penetrating wiring portion 30 b of the bus bar 30 . In addition, the cylinder part 40b of the housing 40 constitutes a cylinder that surrounds the semiconductor device and the second electrode plate, is fixed to the first electrode plate, and has a first screw groove formed on the outer peripheral surface. . In addition, the cover 50 constitutes a cover that has a second screw groove formed thereon, is fixed to the cylindrical body by engaging the second screw groove with the first screw groove, and faces the second screw groove toward the semiconductor device. The two electrode plates (via insulating plate 80 ) are pressurized. In addition, the pin 90 constitutes a second wiring member that penetrates the first electrode plate while being insulated from the first electrode plate, and is connected to the third electrode (gate electrode).

另外，在第一实施例中，罩50隔着绝缘片70而被固定于冷却器60上。但是，也可以在罩50的表面上形成有绝缘膜，并使罩50隔着该绝缘膜而被固定在冷却器60上。此外，如图4所示，也可以采用如下方式，即，外壳40和罩50的周围整体通过作为绝缘体的树脂74而被覆盖。此时，如图4所示，既可以在半导体装置20的周围的空间（被外壳40和罩50所包围的空间）内填充树脂74，也可以不在该空间内填充树脂。此外，如图5所示，也可以使绝缘性的盖72覆盖罩50，并隔着盖72而将罩50固定在冷却器60上。此外，虽然在第一实施例中，使平板部40a和筒部40b一体化，但也可以使它们由不同的部件构成。例如，如图6所示，也可以在金属制的平板40a上固定通过绝缘体而构成的筒40b。另外，在图4～图6中，对于与第一实施例为相同结构的部件，标注与第一实施例相同的符号。In addition, in the first embodiment, the cover 50 is fixed to the cooler 60 via the insulating sheet 70 . However, an insulating film may be formed on the surface of the cover 50, and the cover 50 may be fixed to the cooler 60 via the insulating film. In addition, as shown in FIG. 4 , an aspect may be adopted in which the entire periphery of the casing 40 and the cover 50 is covered with the resin 74 as an insulator. At this time, as shown in FIG. 4 , the space around the semiconductor device 20 (the space surrounded by the case 40 and the cover 50 ) may be filled with the resin 74 or may not be filled with the resin. In addition, as shown in FIG. 5 , the cover 50 may be covered with an insulating cover 72 and the cover 50 may be fixed to the cooler 60 through the cover 72 . In addition, although in the first embodiment, the flat plate portion 40a and the cylindrical portion 40b are integrated, they may be constituted by different members. For example, as shown in FIG. 6 , a cylinder 40 b formed of an insulator may be fixed to a metal flat plate 40 a. In addition, in FIGS. 4-6, the same code|symbol as 1st Example is attached|subjected to the member which has the same structure as 1st Example.

此外，虽然第一实施例的半导体模块10具有金属板84，但也可以不具有金属板84，而使源极电极26直接与平板部40a接触。此外，虽然第一实施例的半导体模块10具有金属板82，但也可以不具有金属板82，而使漏极电极22直接与平板部30a接触。此外，第一实施例的半导体模块10具有绝缘板80。但是，例如在罩50由绝缘体构成的情况等、能够确保母线30和外壳40之间的绝缘的情况下，也可以不具有绝缘板80。In addition, although the semiconductor module 10 of the first embodiment has the metal plate 84 , the metal plate 84 may not be provided, and the source electrode 26 may be directly in contact with the flat plate portion 40 a. In addition, although the semiconductor module 10 of the first embodiment has the metal plate 82 , the metal plate 82 may not be provided, and the drain electrode 22 may be directly in contact with the flat plate portion 30 a. Furthermore, the semiconductor module 10 of the first embodiment has an insulating plate 80 . However, if the insulation between the bus bar 30 and the case 40 can be ensured, for example, when the cover 50 is made of an insulator, the insulating plate 80 may not be provided.

（第二实施例）(second embodiment)

接下来，对图7、图8所示的第二实施例的半导体模块100进行说明。另外，第二实施例的半导体模块100除外壳40和罩50以外，具有与第一实施例的半导体模块10相同的结构。另外，在图7、图8中，对与第一实施例为相同结构的部件，标注与第一实施例相同的符号。Next, the semiconductor module 100 of the second embodiment shown in FIGS. 7 and 8 will be described. In addition, the semiconductor module 100 of the second embodiment has the same structure as the semiconductor module 10 of the first embodiment except for the case 40 and the cover 50 . In addition, in FIG. 7, FIG. 8, the same code|symbol as 1st Example is attached|subjected to the component which has the same structure as 1st Example.

在第二实施例的半导体模块100中，外壳140不具有筒部。即，外壳140仅由平板部构成。在外壳140上形成有三个螺纹孔142。In the semiconductor module 100 of the second embodiment, the case 140 does not have a cylindrical portion. That is, the housing 140 is constituted only by the flat plate portion. Three threaded holes 142 are formed on the housing 140 .

在第二实施例的半导体模块100中，罩150的侧壁部150b以呈大致长方形的方式而形成。此外，在侧壁部150b上形成有凸缘150c。在凸缘150c上，形成有贯穿孔152。In the semiconductor module 100 of the second embodiment, the side wall portion 150b of the cover 150 is formed in a substantially rectangular shape. In addition, a flange 150c is formed on the side wall portion 150b. A through hole 152 is formed in the flange 150c.

螺栓162穿过罩150的贯穿孔152，而与外壳140的螺纹孔142连结。通过三个螺栓162，从而罩150被固定在外壳140上，并对它们之间的层叠体进行加压。The bolt 162 passes through the through hole 152 of the cover 150 and is connected to the threaded hole 142 of the casing 140 . The cover 150 is fixed to the case 140 by three bolts 162, and the laminated body therebetween is pressurized.

以这种方式，由于通过加压从而半导体装置20相对于周围的部件而被固定，因此第二实施例的半导体模块100的寿命较长。此外，在半导体模块100中，与半导体装置20的源极电极26和栅电极28相对应的布线向外壳140的下侧被引出。因此，能够容易地对外部布线进行设置。In this way, since the semiconductor device 20 is fixed relative to the surrounding components by pressurization, the lifetime of the semiconductor module 100 of the second embodiment is long. In addition, in the semiconductor module 100 , wirings corresponding to the source electrode 26 and the gate electrode 28 of the semiconductor device 20 are led out to the lower side of the case 140 . Therefore, external wiring can be easily provided.

另外，虽然在上述的第一实施例和第二实施例中，半导体装置为MOSFET，但也可以将上述的实施例的结构应用于绝缘栅双极性晶体管、二极管等各种半导体装置中。In addition, in the above-mentioned first and second embodiments, the semiconductor device is a MOSFET, but the structure of the above-mentioned embodiments can also be applied to various semiconductor devices such as insulated gate bipolar transistors and diodes.

以上，虽然对实施方式进行了详细说明，但上述实施方式仅为示例，而并非对权利要求的范围进行限定的内容。权利要求书中所记载的技术中还包括对以上例示的具体示例进行各种变形、变更的内容。As mentioned above, although embodiment was described in detail, the above-mentioned embodiment is an example and does not limit the scope of a claim. Various modifications and changes to the specific examples illustrated above are included in the technology described in the claims.

本说明书或附图中所说明的技术要素通过单独或各种组合的方式而发挥技术上的有用性，而并不限定于申请时权利要求书中所记载的组合。此外，本说明书或附图所例示的技术为同时实现多个目的的内容，而实现其中的一个目的本身也具有技术上的有用性。The technical elements described in this specification or the drawings exhibit technical usefulness individually or in various combinations, and are not limited to the combinations described in the claims at the time of application. In addition, the techniques illustrated in this specification or the drawings are intended to achieve a plurality of purposes at the same time, and achieving one of the purposes itself is technically useful.

Claims (3)

1.一种半导体模块，具有：1. A semiconductor module having: 半导体装置，其具有半导体基板、被形成在半导体基板的一侧表面上的第一电极、以及被形成在半导体基板的与所述一侧表面相反的表面上的第二电极；a semiconductor device having a semiconductor substrate, a first electrode formed on one side surface of the semiconductor substrate, and a second electrode formed on a surface of the semiconductor substrate opposite to the one side surface; 第一电极板，其与第一电极相接；a first electrode plate connected to the first electrode; 第二电极板，其与第二电极相接；a second electrode plate connected to the second electrode; 筒体，其包围半导体装置和第二电极板，并被固定在第一电极板上，且在外周面或内周面上形成有第一螺纹槽；a cylinder, which surrounds the semiconductor device and the second electrode plate, is fixed on the first electrode plate, and has a first screw groove formed on the outer peripheral surface or the inner peripheral surface; 罩，其上形成有第二螺纹槽，并且通过第二螺纹槽与第一螺纹槽卡合从而被固定在筒体上，且经由罩用绝缘板而朝向半导体装置对第二电极板进行加压；The cover is formed with the second screw groove, is fixed to the cylindrical body by engaging the second screw groove with the first screw groove, and pressurizes the second electrode plate toward the semiconductor device via the cover insulating plate. ; 第一布线部件，其从第一电极板和罩之间向外侧延伸，并且一端部以与第一电极板绝缘的状态贯穿第一电极板，另一端部与第二电极板相连接，a first wiring member extending outward from between the first electrode plate and the cover, one end of which penetrates the first electrode plate in a state of being insulated from the first electrode plate, and the other end is connected to the second electrode plate, 通过使第一螺纹槽和第二螺纹槽紧固，从而向第一电极板以及第二电极板施加对半导体装置进行加压的压力，由此使第一电极板、半导体装置以及第二电极板相互固定。By tightening the first screw groove and the second screw groove, a pressure for pressing the semiconductor device is applied to the first electrode plate and the second electrode plate, thereby making the first electrode plate, the semiconductor device, and the second electrode plate fixed to each other. 2.如权利要求1所述的半导体模块，其特征在于，2. The semiconductor module according to claim 1, wherein 在罩上隔着冷却器用绝缘片或冷却器用绝缘膜而固定有冷却器。The cooler is fixed to the cover via an insulating sheet for a cooler or an insulating film for a cooler. 3.如权利要求1或2所述的半导体模块，其中，3. The semiconductor module according to claim 1 or 2, wherein, 在半导体基板的所述一侧表面上还形成有第三电极，A third electrode is further formed on the one side surface of the semiconductor substrate, 所述半导体模块还具有第二布线部件，所述第二布线部件以与第一电极板绝缘的状态贯穿第一电极板，并与第三电极相连接。The semiconductor module further includes a second wiring member that penetrates the first electrode plate while being insulated from the first electrode plate, and is connected to the third electrode.
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