CN103107247A - Manufacturing method and structure of LED chip - Google Patents

Abstract

The present invention relates to a method for manufacturing an LED chip and its structure. The method includes the following steps: providing a conductive block; providing an epitaxial block; combining; removing the epitaxial layer substrate; making an independent light-emitting diode; forming a second insulating layer; and electrically connecting. A first, second, and third light-emitting diode are formed on the conductive block, wherein the first and second light-emitting diodes are connected in parallel, and the second and third light-emitting diodes are connected in series. Therefore, the present invention can form a basic unit structure of light-emitting diode series-parallel connection with flexible design, thereby greatly improving the diversity and application of the derivative design of the light-emitting diode chip.

Description

Manufacturing method and structure of LED chip

technical field

The invention relates to a method for manufacturing an LED chip and its structure, in particular to a method for manufacturing an LED chip used in lighting and its structure.

Background technique

FIG. 1 is a cross-sectional view of a conventional LED with a horizontal structure. The conventional parallel light-emitting diode 101 with a horizontal structure is to form an N-type semiconductor layer 111 on a gallium arsenide (GaAs) insulating substrate 10; and then form a P-type semiconductor layer on the N-type semiconductor layer 111. Layer 112 ; then forming a plurality of light emitting diodes 11 by etching; and finally forming a parallel structure between different light emitting diodes 11 by means of the first insulating material 12 and the conductive layer 13 . For the light emitting diodes 11 fabricated by the TD process, different light emitting diodes 11 can only be connected in parallel but not in series.

FIG. 2 is a cross-sectional view of a light-emitting diode horizontal structure under a conventional wafer bonding (Wafer Bonding, WB) process. Existing conventional parallel light-emitting diodes 102 made with WB process technology, which is to form a second insulating material 15 on a metal or silicon substrate 14; then form a P-type semiconductor layer 112 on the second insulating material 15; and then An N-type semiconductor layer 111 is formed on the P-type semiconductor layer 112 ; then a plurality of light-emitting diodes 11 are formed by etching; finally, different light-emitting diodes 11 are formed in parallel through the first insulating material 12 and the conductive layer 13 . The vertical light emitting diodes 11 fabricated by the WB process can only form different light emitting diodes 11 in a parallel structure but cannot form a series structure.

FIG. 3 is a cross-sectional view of a serial LED in a conventional WB process. The horizontal structure light-emitting diode under the existing conventional WB process can form a series light-emitting diode 103, which is to form a second insulating material 15 on a metal or silicon substrate 14; and then form a P on the second insulating material 15. type semiconductor layer 112; then an N-type semiconductor layer 111 is formed on the P-type semiconductor layer 112; then a plurality of light-emitting diodes 11 are formed by etching; finally different light-emitting diodes are made by the first insulating material 12 and the conductive layer 13 11 to form a series structure.

The existing conventional horizontal light-emitting diodes can only form a parallel light-emitting diode 101 structure, and the existing horizontal light-emitting diodes under the conventional WB process can only form a parallel light-emitting diode 102 structure or can only form a series light-emitting diode The diode 103 structure cannot simultaneously form a series-parallel structure in a single process, so the use of the prior art is greatly limited.

It can be seen that the above-mentioned existing LED chip manufacturing method and its structure obviously still have inconveniences and defects in terms of method, product structure and use, and need to be further improved urgently. In order to solve the above-mentioned existing problems, relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable method and structure for general methods and products to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve. Therefore, how to create a new manufacturing method and structure of LED chips is one of the current important research and development topics, and has also become a goal that the industry needs to improve.

Contents of the invention

The purpose of the present invention is to overcome the defects of the existing LED chip manufacturing method and its structure, and provide a new LED chip manufacturing method and its structure. The technical problem to be solved is to enable it to The process achieves the formation of at least one set of LED structures connected in series and parallel on the same base material, thereby greatly improving the diversity and application of subsequent derivative designs of LED chips, which is very suitable for practical use.

The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. A method for manufacturing an LED chip according to the present invention includes the following steps: providing a conductive bulk material, the conductive bulk material comprising: a conductive substrate having a first region and a second region; a first An insulating layer is formed on the first region; and a first metal layer is formed on the second region and the first insulating layer; an epitaxial bulk material is provided, and the epitaxial bulk material includes: an epitaxial layer substrate ; an epitaxial layer is formed on the epitaxial layer substrate; and a second metal layer is formed on a semiconductor side of the epitaxial layer opposite to the other side of the epitaxial layer substrate; bonding is performed by Combining the first metal layer and the second metal layer to integrate the conductive bulk material and the epitaxial bulk material into a combined bulk material; removing the epitaxial layer substrate is to use the epitaxial layer substrate Remove from the combined block to form a light-emitting diode block; making an independent light-emitting diode is to etch the light-emitting diode block, so that at least one first light-emitting diode is formed on the first region, and at least one first light-emitting diode is formed on the second region. forming at least one second light emitting diode and at least one third light emitting diode; forming a second insulating layer, which is to form the second insulating layer between the first light emitting diode, the second light emitting diode and the third light emitting diode; And for electrical connection, it is on the second insulating layer, by forming a first conductive layer so that each of the first light emitting diodes and each of the second light emitting diodes are connected in series with each other, by forming a second The conductive layer connects each of the second light emitting diodes and each of the third light emitting diodes in parallel with each other.

The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned method of manufacturing an LED chip, the conductive base material is a semiconductor wafer base material.

The aforementioned method for manufacturing an LED chip, wherein the semiconductor wafer substrate is a semiconductor conductive substrate of Group IV-IV, Group III-IV, Group II-VI, silicon, germanium, gallium nitride or gallium arsenide.

The aforementioned method for manufacturing an LED chip, wherein the conductive substrate is a conductive substrate made of copper tungsten, molybdenum, copper, tungsten or manganese.

The aforementioned method of manufacturing an LED chip, wherein the conductive base material includes: a non-conductive base material; and a plurality of first conductive posts penetrate the non-conductive base material and make the first conductive posts and the first metal layer electrical connections.

The aforementioned method of manufacturing an LED chip, wherein a reflective layer is formed between the semiconductor side and the second metal layer, and a plurality of second conductive pillars are formed in the reflective layer to electrically connect the semiconductor side and the second metal layer. layer.

The purpose of the present invention and the solution to its technical problem also adopt the following technical solutions to achieve. According to an LED chip structure proposed by the present invention, it includes: a conductive block material, the conductive block material includes: a conductive base material, which has a first region and a second region; a first insulating layer is formed on the On the first region; and a plurality of first metal layers are independently combined with each other on the second region and the first insulating layer; at least one first light-emitting diode, through one of the plurality of second metal layers and one of the first first metal layers The metal layer is combined and fixed on the first insulating layer; at least one second light-emitting diode is fixed on the second region through the combination of the second metal layer and the first metal layer, and the second The light emitting diode and the first light emitting diode are connected in series through one of a plurality of second insulating layers and a first conductive layer; and at least one third light emitting diode is connected in series through a second metal layer and a first metal layer After being combined, it is fixed on the second region and connected in parallel with the second light emitting diode through one of the second insulating layers and a second conductive layer.

The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.

In the aforementioned LED chip structure, the conductive base material is a semiconductor wafer base material.

The aforementioned LED chip structure, wherein the semiconductor wafer substrate is a semiconductor conductive substrate of Group IV-IV, Group III-IV, Group II-VI, silicon, germanium, gallium nitride or gallium arsenide.

The aforementioned LED chip structure, wherein the conductive substrate is a conductive substrate made of copper tungsten, molybdenum, copper, tungsten or manganese.

The aforementioned LED chip structure, wherein the conductive substrate includes: a non-conductive substrate; and a plurality of first conductive pillars penetrate the non-conductive substrate and are electrically connected to the first metal layer on the second region connect.

The aforementioned LED chip structure, wherein each of the first light emitting diodes, each of the second light emitting diodes and each of the third light emitting diodes is respectively provided with a reflective layer between the corresponding second metal layer, and the second region A plurality of second conductive pillars are arranged in the reflective layer above to electrically connect the second light-emitting diode and the third light-emitting diode with the corresponding second metal layer respectively.

Compared with the prior art, the present invention has obvious advantages and beneficial effects. By virtue of the above-mentioned technical solution, the manufacturing method and the structure of the LED chip of the present invention have at least the following advantages and beneficial effects: The present invention can simultaneously complete the LED series-parallel structure on a conductive block with the most simplified process, so that a large Improve the diversity and application of light-emitting diode chip derivative design.

To sum up, the present invention relates to a method for manufacturing an LED chip and its structure. Wherein the method comprises the following steps: providing a conductive block; providing an epitaxial block; combining; removing the epitaxial layer substrate; making an independent light emitting diode; forming a second insulating layer; and making electrical connection. First, second and third light emitting diodes are formed on the conductive block, wherein the first and second light emitting diodes are connected in parallel, and the second and third light emitting diodes are connected in series. Therefore, the present invention can form a basic unit structure with a series-parallel connection of light-emitting diodes that can be flexibly designed, thereby greatly improving the diversity and application of derivative designs of light-emitting diode chips. The present invention has significant progress in technology, has obvious positive effects, and is a novel, progressive and practical new design.

The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.

Description of drawings

FIG. 1 is a cross-sectional view of a conventional LED with a horizontal structure.

FIG. 2 is a cross-sectional view of a horizontal structure of a light-emitting diode under a conventional WB process.

FIG. 3 is a cross-sectional view of a serial LED in a conventional WB process.

Fig. 4 is a flowchart of a method for manufacturing an LED chip according to an embodiment of the present invention.

FIG. 5A is a cross-sectional view of a first structure of a conductive bulk material according to an embodiment of the present invention.

FIG. 5B is a cross-sectional view of a second structure of a conductive bulk material according to an embodiment of the present invention.

Fig. 6 is a cross-sectional view of an epitaxial bulk material according to an embodiment of the present invention.

Fig. 7 is a cross-sectional view of a bonding block according to an embodiment of the present invention.

8 is a cross-sectional view of an epitaxial bulk material after removing the epitaxial layer substrate according to an embodiment of the present invention.

FIG. 9 is a schematic diagram of an etched independent light emitting diode according to an embodiment of the present invention.

FIG. 10 is a schematic diagram of forming a second insulating layer on an independent light emitting diode according to an embodiment of the present invention.

FIG. 11A is a schematic diagram of a first structure in which a series-parallel electrical connection is performed on a second insulating layer with a conductive layer according to an embodiment of the present invention.

FIG. 11B is a schematic diagram of a second structure in which series-parallel electrical connections are performed on the second insulating layer with a conductive layer according to an embodiment of the present invention.

12 is a cross-sectional view of an epitaxial block further provided with a reflective layer according to an embodiment of the present invention.

FIG. 13 is a cross-sectional view of an LED chip structure using a non-conductive substrate provided with a first conductive post according to an embodiment of the present invention.

101: Parallel light-emitting diodes 102: Parallel light-emitting diodes

103: Series light-emitting diodes 10: Insulating substrate

11: Light-emitting diode 111: N-type semiconductor layer

112: P-type semiconductor layer 12: The first insulating material

13: Conductive layer 14: Metal or silicon substrate

15: Second insulating material 200: LED chip structure

20: Conductive Block 21: Conductive Substrate

22: The first area 23: The second area

24: The first insulating layer 25: The first metal layer

26: Non-conductive substrate 27: The first conductive column

30, 30': Epitaxy bulk material 31: Epitaxy layer substrate

32: Epitaxial layer 33: Second metal layer

34: Semiconductor side 35: Reflective layer

36: The second conductive column 40: Combined blocks

50: Light-emitting diode block 60: The first light-emitting diode

70: The second light-emitting diode 80: The third light-emitting diode

90: Second insulating layer 91: First conductive layer

92: Second conductive layer

Detailed ways

In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the following in conjunction with the accompanying drawings and preferred embodiments, the specific implementation methods, methods, Steps, structures, features and effects thereof are described in detail below.

The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation, it should be possible to obtain a deeper and more specific understanding of the technical means and effects of the present invention to achieve the intended purpose, but the attached drawings are only for reference and description, not for the purpose of the present invention. be restricted.

Fig. 4 is a flowchart of a method for manufacturing an LED chip according to an embodiment of the present invention. FIG. 5A is a cross-sectional view of a first structure of a conductive bulk material according to an embodiment of the present invention. FIG. 5B is a cross-sectional view of a second structure of a conductive bulk material according to an embodiment of the present invention. Fig. 6 is a cross-sectional view of an epitaxial bulk material according to an embodiment of the present invention. Fig. 7 is a cross-sectional view of a bonding block according to an embodiment of the present invention. 8 is a cross-sectional view of an epitaxial bulk material after removing the epitaxial layer substrate according to an embodiment of the present invention. FIG. 9 is a schematic diagram of an etched independent light emitting diode according to an embodiment of the present invention. FIG. 10 is a schematic diagram of forming a second insulating layer on an independent light emitting diode according to an embodiment of the present invention. FIG. 11A is a schematic diagram of a first structure in which a series-parallel electrical connection is performed on a second insulating layer with a conductive layer according to an embodiment of the present invention. FIG. 11 b is a schematic diagram of a second structure in which series and parallel electrical connections are performed on the second insulating layer with a conductive layer according to an embodiment of the present invention. 12 is a cross-sectional view of an epitaxial block further provided with a reflective layer according to an embodiment of the present invention. FIG. 13 is a cross-sectional view of an LED chip structure using a non-conductive substrate provided with a first conductive post according to an embodiment of the present invention.

As shown in FIG. 4 , a manufacturing method S200 of an LED chip in this embodiment includes the following steps: providing a conductive bulk (step S10); providing an epitaxial bulk (step S20); performing bonding (step S30); Removing the epitaxial layer substrate (step S40); fabricating an independent light emitting diode (step S50); forming a second insulating layer (step S60); and performing electrical connection (step S70).

As shown in FIG. 5A, a conductive block material is provided (step S10). The conductive block material 20 includes a conductive substrate 21. In order to simultaneously form light-emitting diodes with horizontal and vertical structures, the conductive substrate 21 is divided into having a first area 22 and a second area 23 . Next, a first insulating layer 24 is formed on the first region 22 , thereby providing conditions for subsequent fabrication of horizontal light-emitting diodes. Then a first metal layer 25 is formed on the second region 23 and the first insulating layer 24. In addition to providing the subsequent bonding step, the first metal layer 25 on the second region 23 also provides Subsequent conditions for fabricating light-emitting diodes with a vertical structure.

As shown in Figure 5B, when selecting the conductive substrate 21, the conductive substrate 21 can be a semiconductor wafer substrate, for example, the semiconductor wafer substrate can be IV-IV, III-IV, II-VI, Semiconductor conductive substrate 21 of silicon, germanium, gallium nitride or gallium arsenide; or conductive substrate 21 can be a conductive substrate 21 with good conductivity such as copper tungsten, molybdenum, copper, tungsten or manganese material... . In addition, the conductive base material can also use a non-conductive base material 26 and become a conductive base material after processing, for example, the conductive base material includes a non-conductive base material 26 and has a plurality of first conductive pillars 27 in the non-conductive base material 26, Each of the first conductive pillars 27 penetrates the non-conductive substrate 26 and is electrically connected to the first metal layer 25 , while the first conductive pillars 27 also provide the function of heat conduction.

As shown in Figure 6, an epitaxial block is provided (step S20), the epitaxial block 30 is a light-emitting diode epitaxial block, and the epitaxial block 30 includes an epitaxial layer substrate 31; an epitaxial layer 32 and a second metal layer 33 . The epitaxial layer substrate 31 is a substrate for supporting and growing LEDs, and the epitaxial layer 32 of the LED is formed on the epitaxial layer substrate 31 . For subsequent bonding, the semiconductor side 34 of the epitaxial layer 32 , that is, the other side of the epitaxial layer 32 relative to the epitaxial layer substrate 31 , is formed with a second metal layer 33 .

As shown in FIG. 7, the bonding (step S30) is carried out. Since there is a first metal layer 25 on the conductive bulk material 20 and a second metal layer 33 on the epitaxial bulk material 30, it can be based on the same material properties. , by combining the first metal layer 25 and the second metal layer 33 to further combine the conductive bulk material 20 and the epitaxial bulk material 30 into one, such a combination can make the conductive bulk material 20 and the epitaxial bulk material 30 a combination Block 40.

As shown in FIG. 8 , the epitaxial layer substrate is removed (step S40 ), and after the conductive block 20 and the epitaxial block 30 become a combined block 40 , the conductive block 20 can replace the epitaxial layer substrate 31 and Provide structural support for the epitaxial layer 32 . At this time, the epitaxial layer substrate 31 must be removed from the bonding block 40 so that the light-emitting diodes can emit light effectively. In addition, the removal of the epitaxial layer substrate 31 can also facilitate subsequent fabrication of each LED electrode. After the epitaxial layer 32 is transferred onto the conductive bulk 20 and the epitaxial layer substrate 31 is removed, the bulk 40 is combined to form an LED bulk 50 .

As shown in FIG. 9 , independent LEDs are manufactured (step S50 ). After the LED block 50 is formed, the LED block 50 is then etched. In order to subsequently fabricate series and parallel light emitting diode structures, the light emitting diode block 50 must first be etched to form a plurality of independent light emitting diodes. Layer 25 becomes a plurality of independent blocks that are not electrically connected to each other.

In the planning of etching, since the first insulating layer 24 on the first region 22 can provide the conditions for making a horizontal structure, at least one first light emitting diode 60 must be formed on the first region 22; The first metal layer 25 and the second metal layer 33 can be electrically connected to the conductive substrate 21, thus providing the conditions for making a vertical structure. Therefore, at least one second light emitting diode 70 and at least one first light emitting diode 70 must be formed on the second region 23. A parallel structure of three light emitting diodes 80; finally, the first light emitting diode 60, the second light emitting diode 70 and the third light emitting diode 80 connected in parallel form a series structure again.

As shown in Figure 10, a second insulating layer is formed (step S60). After making the independent light emitting diode (step S50), in order to form the subsequent series and parallel circuits, the first light emitting diode 60 and the second light emitting diode 70 A second insulating layer 90 must be formed at the etched portion between the third light-emitting diode 80 and the third light-emitting diode 80 to achieve necessary electrical isolation.

As shown in Fig. 11A and Fig. 11B, carry out electrical connection (step S70), after the second insulating layer 90 is made, then on the second insulating layer 90, make each first light emitting layer 91 by forming a first conductive layer 91 The diode 60 and each second light emitting diode 70 are connected in series with each other, and each second light emitting diode 70 and each third light emitting diode 80 are connected in parallel with each other by forming a second conductive layer 92 on the second insulating layer 90 In this way, LED circuits with series and parallel circuits can be formed on the same conductive block material 20 .

As shown in FIG. 12 , in order to increase the light extraction efficiency of the light-emitting diode, a reflective layer 35 may be formed between the semiconductor side 34 of the epitaxial layer 32 and the second metal layer 33 during fabrication of the epitaxial block 30 ′. The reflection of 35° can achieve the effect of increasing the light extraction efficiency of the light emitting diode. The reflective layer 35 is generally made of a dielectric (dielectric) material. Since the second light emitting diode 70 and the third light emitting diode 80 must have a vertical structure, at least the semiconductor side 34 of the second light emitting diode 70 and the third light emitting diode 80 It must be electrically connected to the second metal layer 33, so at least in the reflective layer 35 corresponding to the second light emitting diode 70 and the third light emitting diode 80, a plurality of second conductive pillars 36 must be formed, so that the second light emitting diode 70 and the semiconductor side 34 of the third LED 80 are electrically connected to the second metal layer 33 , and the second conductive pillar 36 also has the function of heat conduction.

In order to avoid process alignment and increase manufacturing complexity, the plurality of second conductive pillars 36 are not limited to the reflective layer 35 formed on the first region 22 or the second region 23, so that each first light emitting diode 60 , the semiconductor side 34 of the second LED 70 and the third LED 80 are electrically connected to the second metal layer 33 . Since the second metal layer 33 corresponding to the first light emitting diode 60 has been etched to be independent and not electrically connected to each other, such an approach will not affect the fabrication of the series circuit.

Please refer to FIG. 11A again. With the above manufacturing method, the present invention provides an embodiment of an LED chip structure 200, which includes: a conductive block 20; at least one first light emitting diode 60; at least one second light emitting diode Diode 70 ; at least one third LED 80 .

The conductive block 20 includes a conductive base material 21 . The conductive substrate 21 has a first region 22 and a second region 23, the first region 22 has a first insulating layer 24, and the second region 23 and the first insulating layer 24 have a plurality of independent first metal Layer 25. In the manufacturing process, the first metal layer 25 will become a plurality of blocks that are independent of each other and not electrically connected to each other after being etched, that is, a plurality of first metal layers 25, but these first metal layers 25 have the characteristics provided in the process. combined effect.

Similarly, when selecting the conductive substrate 21, the conductive substrate 21 can be a semiconductor wafer substrate, for example, the semiconductor wafer substrate can be IV-IV, III-IV, II-VI, silicon, germanium, The semiconductor conductive substrate 21 of gallium nitride or gallium arsenide; or the conductive substrate 21 may be a conductive substrate 21 with good conductivity such as copper tungsten, molybdenum, copper, tungsten, or manganese.

As shown in FIG. 11B, the conductive base material can also use a non-conductive base material 26 and become a conductive base material after processing. For example, the conductive base material includes a non-conductive base material 26 and has a plurality of first The conductive pillars 27 , each of the first conductive pillars 27 penetrate the non-conductive substrate 26 and are electrically connected with the first metal layer 25 , meanwhile, the first conductive pillars 27 also provide the function of heat conduction.

The first light emitting diode 60 can be fixed on the first insulating layer of the first region 22 by combining one of the plurality of second metal layers 33 with one of the plurality of first metal layers 25. on layer 24.

After the second light emitting diode 70 is combined with a first metal layer 25 through a second metal layer 33 , the second light emitting diode 70 can also be fixed on the second region 23 . In addition, the second light emitting diode 70 and the first light emitting diode 60 can be connected in series with each other through one of the second insulating layers 90 and a first conductive layer 91 .

The third light emitting diode 80 is fixed on the second region 23 after being combined with a second metal layer 33 and a first metal layer 25 by another set of the second metal layer 33 . The third light emitting diode 80 and the second light emitting diode 70 can also be connected in parallel to each other through one of the second insulating layers 90 and a second conductive layer 92 .

As shown in FIG. 13 , in order to increase the light extraction efficiency of the LEDs, a reflective layer 35 may be provided between each first LED 60 , second LED 70 , and third LED 80 and each second metal layer 33 respectively. , and because the second light emitting diode 70 and the third light emitting diode 80 will become a vertical structure, so at least the reflective layer 35 on the second region 23 must have a plurality of second conductive pillars 36, so that the second light emitting diode 70 and the third light emitting diode 80 are respectively electrically connected to the corresponding second metal layer 33 , and the same second conductive column 36 also has the function of heat conduction.

The above-mentioned embodiment of the LED chip structure 200 is a product manufactured according to the embodiment of the LED chip manufacturing method S200 , so details or parts of the same content will not be repeated one by one.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the technical content disclosed above to make some changes or modify them into equivalent embodiments with equivalent changes, but as long as they do not depart from the technical solution of the present invention, the Technical Essence Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

Claims (12)

1. A method for manufacturing an LED chip, characterized in that it comprises the following steps: A conductive block material is provided, the conductive block material includes: a conductive base material, which has a first region and a second region; a first insulating layer is formed on the first region; and a first metal layer is formed on the on the second region and the first insulating layer; An epitaxial bulk material is provided, and the epitaxial bulk material comprises: an epitaxial layer substrate; an epitaxial layer is formed on the epitaxial layer substrate; and a second metal layer is formed on the epitaxial layer opposite to the epitaxial layer a semiconductor side on the other side of the epitaxial layer substrate; performing bonding by combining the first metal layer and the second metal layer to integrate the conductive bulk and the epitaxial bulk to form a bonded bulk; removing the epitaxial layer substrate is removing the epitaxial layer substrate from the bonding bulk to form a light emitting diode bulk; Making an independent light-emitting diode is to etch the light-emitting diode block, so that at least one first light-emitting diode is formed on the first region, and at least one second light-emitting diode and at least one third light-emitting diode are formed on the second region; forming a second insulating layer between the first light emitting diode, the second light emitting diode and the third light emitting diode; and Conduct electrical connection, which is on the second insulating layer, by forming a first conductive layer so that each of the first light emitting diodes and each of the second light emitting diodes are connected in series with each other, by forming a second conductive layer The layer connects each of the second LEDs and each of the third LEDs in parallel with each other. 2. The method of manufacturing LED chips according to claim 1, wherein the conductive substrate is a semiconductor wafer substrate. 3. The manufacturing method of LED chips according to claim 2, wherein said semiconductor wafer base material is IV-IV group, III-IV group, II-VI group, silicon, germanium, gallium nitride or gallium arsenide semiconductor conductive substrate. 4. The method for manufacturing LED chips according to claim 1, wherein the conductive substrate is a conductive substrate made of copper tungsten, molybdenum, copper, tungsten or manganese. 5. The method of manufacturing an LED chip according to claim 1, wherein the conductive base material comprises: a non-conductive base material; and a plurality of first conductive pillars penetrate the non-conductive base material and make the The first conductive pillars are electrically connected with the first metal layer. 6. The manufacturing method of LED chips according to claim 1, wherein a reflective layer is formed between the semiconductor side and the second metal layer, and a plurality of second conductive pillars are formed in the reflective layer to electrically Sexually connect the semiconductor side with the second metal layer. 7. A LED chip structure, characterized in that it comprises: A conductive block material, the conductive block material includes: a conductive base material, which has a first region and a second region; a first insulating layer is formed on the first region; and a plurality of first metal layers are independent of each other bonded to the second region and the first insulating layer; At least one first light-emitting diode is fixed on the first insulating layer by combining one of the second metal layers with the first metal layer; At least one second light emitting diode is fixed on the second region by combining the second metal layer and the first metal layer, and the second light emitting diode and the first light emitting diode are connected by a plurality of second light emitting diodes. one of the insulating layers and a first conductive layer are connected in series; and At least one third light-emitting diode is fixed on the second region through the combination of the second metal layer and the first metal layer, and through one of the second insulating layers and a second conductive layer and The second light emitting diodes are connected in parallel. 8. The LED chip structure according to claim 7, wherein the conductive substrate is a semiconductor wafer substrate. 9. LED chip structure according to claim 8, is characterized in that wherein said semiconductor wafer base material is IV-IV group, III-IV group, II-VI group, silicon, germanium, gallium nitride or arsenic Gallium nitride semiconductor conductive substrate. 10. The LED chip structure according to claim 7, wherein the conductive substrate is a conductive substrate made of copper tungsten, molybdenum, copper, tungsten or manganese. 11. The LED chip structure according to claim 7, wherein the conductive substrate comprises: a non-conductive substrate; and a plurality of first conductive pillars penetrate the non-conductive substrate and connect with the second The first metal layer on the region is electrically connected. 12. The LED chip structure according to claim 7, wherein each of the first light-emitting diodes, each of the second light-emitting diodes, and each of the third light-emitting diodes is separated from the corresponding second metal layer. A reflective layer is provided, and a plurality of second conductive pillars are arranged in the reflective layer on the second area to electrically connect the second light emitting diode and the third light emitting diode with the corresponding second metal layer respectively.

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