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CN103094413B - The manufacturing installation of solar cell, solar cell and manufacture method thereof - Google Patents

The manufacturing installation of solar cell, solar cell and manufacture method thereof Download PDF

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Publication number
CN103094413B
CN103094413B CN201210422640.2A CN201210422640A CN103094413B CN 103094413 B CN103094413 B CN 103094413B CN 201210422640 A CN201210422640 A CN 201210422640A CN 103094413 B CN103094413 B CN 103094413B
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China
Prior art keywords
film forming
substrate
forming room
interarea
anode electrode
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CN201210422640.2A
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CN103094413A (en
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仲村恵右
山口晋作
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority claimed from JP2012202923A external-priority patent/JP5840095B2/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

A kind of manufacturing installation of solar cell, solar cell and manufacture method thereof are provided, reduce the manufacturing cost of heterojunction solar battery.The manufacturing installation of solar cell possesses: substrate holder, and the mode plane earth exposed with the 1st interarea and the 2nd both interareas that make substrate keeps multiple described substrate; Front film forming room, when described substrate holder is moved to anode electrode side, forms the 1st film at described 1st interarea of described substrate; Rear film forming room, when described substrate holder is moved to anode electrode side, forms the 2nd film at described 2nd interarea of described substrate; Mobile room, can not connect described front film forming room and described rear film forming room from described front film forming room to the mode that described substrate holder is carried by described rear film forming room to open atmosphere; And carrying mechanism, open atmosphere the major part of transport path, do not carrying described substrate holder along the direction of described 1st interarea from described front film forming room to described rear film forming room.

Description

The manufacturing installation of solar cell, solar cell and manufacture method thereof
Technical field
The present invention relates to the manufacture method of the manufacturing installation of solar cell, solar cell and solar cell.
Background technology
Along with fossil energy burning caused by carbon dioxide (CO 2) increase of gas, solar power system as the environment of preserving our planet of 21 century clean energy resource and be expected to, its output increases in the whole world explosively.
Use thickness is the p-type crystalline silicon substrates of about 200 μm, formed successively in the face side of this substrate and improve the superficial makings of absorptivity, N-shaped impurity diffusion layer, antireflection film and surface electrode (such as, combed Ag electrode), and define backplate (such as by silk screen printing in the rear side of this substrate, Al electrode) after, they are burnt till, thus manufactures current general crystal silicon solar energy battery.
In above-mentioned burning till, the solvent content volatilization of surface electrode and backplate, and in the sensitive surface side of this substrate, combed Ag electrode is broken antireflection film and is connected with N-shaped impurity diffusion layer, in addition, in the rear side of this substrate, a part of Al of Al electrode is diffused into this substrate and forms back surface field layer (BSF:BackSurfaceField).This BSF layer has following effect: form internal electric field on the composition surface with this silicon substrate and the minority carrier produced near BSF layer back into silicon substrate inside, suppresses the charge carrier at Al ate electrode place to combine again.But, about the thickness of the joint caused by this diffusion, BSF layer, if use the thermal process of concentration of dopant with appropriateness to be formed, then become the thickness that hundreds of nm ~ several μm is thick, the reduction of reducing in conjunction with caused open circuit voltage again in genetic horizon, short circuit current caused by light absorption.
Therefore, heterojunction (heterojunction) solar cell forming joint or the BSF layer be made up of doped silicon layer (impurity-dopedsiliconlayer) at the back side of crystalline silicon substrates across thin intrinsic semiconductor film (i layer) is developed.
In heterojunction solar battery, utilize film to form the doped silicon layer of rear side thus freely can set the impurities concentration distribution of doped silicon layer, in addition because impurity layer is thin, so the combining again of the charge carrier in film, light absorption can be suppressed, large short circuit current can be obtained.In addition, between the intrinsic semiconductor layer inserted can suppress to engage between Impurity Diffusion, formed and there is the joint of precipitous Impurity Distribution, so high open circuit voltage can be obtained by forming good joint interface.
And, in heterojunction solar battery, the intrinsic semiconductor film of rear side and doped silicon layer are formed under the low temperature of about 200 DEG C, even if so the thickness of substrate is thin, also can reduce due to heat and produce in a substrate stress (stress), substrate warpage.In addition, the reduction that also can suppress substrate quality for the crystalline silicon substrates being easy to deterioration due to heat can be expected.
In the manufacture of heterojunction solar battery, when such as using N-shaped crystalline silicon substrates, in face side, make intrinsic semiconductor film (i layer) and p-type doped silicon layer film forming, side overleaf, makes intrinsic semiconductor film (i layer) and N-shaped doped silicon layer film forming.
On the other hand, following content is recorded: possess in the manufacture of the semiconductor active layer of PIN junction in Photvoltaic device in patent documentation 1, the impurity layer that diborane (diborane) forms P type is added in the mist of silane (silane) and methane (methane), in silicon compound gas, be mixed into nitrogen source gas and oxygen source gas forcibly and form intrinsic layer, in silane, adding the impurity layer that hydrogen phosphide (phosphine) forms N-type.Thus, according to patent documentation 1, by making to contain nitrogen and oxygen forcibly in intrinsic layer simultaneously, the deteriorated ratio of irradiating the photoelectric conversion efficiency that high light causes for a long time can be suppressed.
In addition, as the device of the duplexer film forming of the semiconductive thin film having made multiple film stacked, the known CVD device being connected in series inline (in-line) type of multiple reative cell.
Following content is described: be continuously separated in plasma device what construct for the formation of pin in patent documentation 2, in series possess charging chamber, the 1st reative cell, the 2nd reative cell, the 3rd reative cell and take out room, glass substrate is being transported to successively in the process of each room, carry out the film forming of p-type, i type, N-shaped noncrystalline semiconductor film successively, thus form Photvoltaic device.Be continuously separated in the 2nd reative cell of plasma device at this, be set to that between upside sparking electrode and downside sparking electrode, the direct of travel be interposed between along glass substrate narrows after broadening gradually gradually.Thus, according to patent documentation 2, discharge energy density correctly can be changed along the direct of travel of substrate, so the i layer that the band gap (bandgap) with expectation constructs can be formed in each of multiple glass substrates of movement in the reaction chamber.
Patent documentation 1: Japanese Laid-Open Patent Publication 61-222277 publication
Patent documentation 2: Japanese Unexamined Patent Publication 6-151917 publication
Summary of the invention
The side of technology in 2 interareas only in glass substrate (insulative substrate) that patent documentation 1 and patent documentation 2 are recorded carries out premised on film forming.Therefore, in patent documentation 1 and patent documentation 2, about the film forming process how implemented efficiently to forming different films for the manufacture of 2 interareas in the semiconductor substrate (such as, silicon substrate) of heterojunction solar battery, without any record.
Suppose in order to manufacture heterojunction solar battery employ patent documentation 2 record be continuously separated plasma device when, in order to make the duplexer of different semiconductive thin films 2 interareas (surface and the back side) of semiconductor substrate each in film forming, need following operation: after the interarea of a side of semiconductor substrate defines semiconductive thin film, make semiconductor-based board reversal.Therefore, need to be formed face side, device that multiple CVD device and carrying out at the chien shih silicon substrate of each CVD device of semiconductor film layer of rear side is reversed.Thus, cause installation cost increase and manufacturing process complicated, likely make manufacturing cost surging.
The present invention, in view of above-mentioned and complete, its object is to obtain a kind of manufacture method of manufacturing installation, solar cell and the solar cell that can reduce the solar cell of the manufacturing cost of heterojunction solar battery.
In order to solve above-mentioned problem and realize object, the feature of the manufacturing installation of the solar cell involved by a side of the present invention is, possess: substrate holder, in the mode that described 1st interarea and described 2nd both interareas that make the substrate of the 2nd interarea of the opposition side with the 1st interarea and described 1st interarea expose, plane earth keeps multiple described substrate; Front film forming room, when described substrate holder is moved to anode electrode side, to touch on described anode electrode to make described substrate holder and described 2nd interarea isolated from the electric discharge that should occur and makes described 1st interarea be exposed to the mode of the described electric discharge that should occur, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make the 1st gas discharge, thus forming the 1st film at described 1st interarea of described substrate; Rear film forming room, when described substrate holder is moved to anode electrode side, to touch on described anode electrode to make described substrate holder and described 1st interarea isolated from the electric discharge that should occur and makes described 2nd interarea be exposed to the mode of described electric discharge, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make the 2nd gas discharge, thus forming the 2nd film at described 2nd interarea of described substrate; And carrying mechanism, carrying described substrate holder along the direction of described 1st interarea in the major part from described front film forming room to described rear film forming room in transport path under the state of not open atmosphere.
According to the present invention, there is no need for the operation that substrate holder is reversed, and compared to the situation of carrying out reversing, the size of the mobile room connecting front film forming room and rear film forming room can be reduced.Thereby, it is possible to shorten manufacturing process, and the maximization of manufacturing installation can be suppressed, so the manufacturing cost of heterojunction solar battery can be reduced.
Accompanying drawing explanation
Fig. 1 is the figure of the structure of the manufacturing installation of the solar cell that execution mode 1 is shown.
Fig. 2 is the vertical view of the structure of the solar cell substrate retainer illustrated in execution mode 1.
Fig. 3 is the profile of the structure of the solar cell substrate retainer illustrated in execution mode 1.
Fig. 4 is the figure of the structure of the film forming room illustrated in execution mode 1.
Fig. 5 is the structure of the carrying mechanism illustrated in execution mode 1 and the figure of action.
Fig. 6 is the structure of the manufacturing installation of the solar cell that execution mode 2 is shown and the figure of action.
Fig. 7 is the structure of the manufacturing installation of the solar cell that execution mode 2 is shown and the figure of action.
Fig. 8 is the figure of the structure of the film forming room illustrated in execution mode 2.
Fig. 9 is the top partial view diagram of the structure of the solar cell substrate pallet illustrated in execution mode 3.
Figure 10 is the fragmentary cross-sectional view of the structure of the solar cell substrate pallet illustrated in execution mode 3.
Figure 11 is the top partial view diagram having loaded the state of solar cell substrate pallet, substrate and solar cell substrate pressing plate illustrated in execution mode 3.
Figure 12 is the fragmentary cross-sectional view in the C-C direction in Figure 11.
Figure 13 is the fragmentary cross-sectional view in the D-D direction in Figure 11.
Figure 14 is the profile making the substrate of noncrystalline semiconductor layer film forming illustrated in execution mode 3.
Figure 15 is the top partial view diagram having loaded an example of the state of solar cell substrate pallet, substrate and solar cell substrate pressing plate illustrated in execution mode 3.
Figure 16 is the top partial view diagram having loaded an example of the state of solar cell substrate pallet, substrate and solar cell substrate pressing plate illustrated in execution mode 3.
Figure 17 is the top partial view diagram having loaded an example of the state of solar cell substrate pallet, substrate and solar cell substrate pressing plate illustrated in execution mode 3.
Figure 18 is the vertical view defining the solar cell substrate of collecting electrodes illustrated in execution mode 3.
Figure 19 is the fragmentary cross-sectional view in the E-E direction in Figure 18.
Figure 20 is the top partial view diagram of an example of the structure of the solar cell substrate pallet illustrated in execution mode 3.
Figure 21 is the top partial view diagram having loaded an example of the state of solar cell substrate pallet, substrate and solar cell substrate pressing plate illustrated in execution mode 3.
Figure 22 is the fragmentary cross-sectional view in the H-H direction in Figure 21.
Figure 23 is the fragmentary cross-sectional view in the I-I direction in Figure 21.
Figure 24 is the fragmentary cross-sectional view of an example of the structure illustrated in the film forming room in execution mode 4.
Figure 25 is the fragmentary cross-sectional view of an example of the structure illustrated in the film forming room in execution mode 4.
Figure 26 is the fragmentary cross-sectional view of an example of the structure illustrated in the film forming room in execution mode 4.
Figure 27 is the fragmentary cross-sectional view of an example of the structure illustrated in the film forming room in execution mode 4.
(symbol description)
1,201-1,201-2: load chamber; 3,203: mobile room; 4: relief chamber; 5-1 ~ 5-6,5-11 ~ 5-16,5-21 ~ 5-26: gate valve; 6,6-1,6-2: solar cell substrate retainer; 7: cathode electrode; 8: anode electrode; 9: substrate; 10: high frequency electric source; 11,412,413,415i: process gas control system; 14:i type noncrystalline silicon layer; 15:p type noncrystalline silicon layer; 16:n type noncrystalline silicon layer; 17: collecting electrodes; 18: transparency conducting layer; 19: non-film-forming region; 21, the 221-1,221-2: 1st film forming room; 22, the 222-1,222-2: 2nd film forming room; 23, the 223-1,223-2: 3rd film forming room; 24, the 224-1,224-2: 4th film forming room; 30,230: carrying mechanism; 31,231: the 1 carrying mechanisms; 32,232: the 2 carrying mechanisms; 33,233: the 3 carrying mechanisms; 61: solar cell substrate pallet; 62: solar cell substrate pressing plate; 100,200: manufacturing installation; 234: the 4 carrying mechanisms; 235: the 5 carrying mechanisms; 414: switching part; 415i1: control system main body; 415i2: heating arrangements; 416j: gas extraction system.
Embodiment
Below, with reference to the accompanying drawings, the execution mode of the manufacturing installation of solar cell of the present invention is described in detail.In addition, the invention is not restricted to present embodiment.In addition, the solar cell manufacturing installation figure used in the following embodiments is schematic figure, and the relation, respective ratio etc. of length, depth, height are different from reality.
execution mode 1.
Use Fig. 1 that the manufacturing installation 100 of the solar cell of execution mode 1 is described.Fig. 1 is the vertical view of an example of the structure of the manufacturing installation 100 schematically showing solar cell.
The manufacturing installation 100 of solar cell is that multiple film forming room is connected in series via multiple gate valve (gatevalve) such as the manufacture of the inline type plasma CVD equipment of heterojunction solar battery.Specifically, the manufacturing installation 100 of solar cell possesses solar cell substrate retainer 6, load chamber (loadingchamber) the 1, the 1st film forming room 21, the 2nd film forming room 22, mobile room 3, the 3rd film forming room 23, the 4th film forming room 24, relief chamber (unloadingchamber) 4, multiple gate valve 5-1 ~ 5-6 and carrying mechanism 30.
The mode that solar cell substrate retainer 6 exposes to make this two side of the surperficial 9a in each substrate 9 and back side 9b (with reference to Fig. 3), plane earth keeps multiple substrate 9-1 ~ 9-16(with reference to Fig. 2).Each substrate 9 is formed by the material being such as principal component with semiconductor (such as, silicon), is the substrate should piling up mutually different films in order to form heterojunction solar battery this two side of surperficial 9a and back side 9b.Load chamber 1, the 1st film forming room 21, the 2nd film forming room 22, mobile room 3, the 3rd film forming room 23, the 4th film forming room 24, relief chamber 4 are connected in series via multiple gate valve 5-1 ~ 5-6.
Under the state that gate valve 5-1 closes, from air, drop into load chamber 1 the solar cell substrate retainer 6 such as roughly vertically arranged.After the evacuation of having carried out load chamber 1, open gate valve 5-1, solar cell substrate retainer 6, along the surperficial 9a of substrate 9, is transported to the 1st film forming room 21 from load chamber 1 by carrying mechanism 30.Closed shutter valve 5-1,5-2, after the evacuation of having carried out the 1st film forming room 21, import to the 1st film forming room 21 by the 1st film forming gas, at surperficial 9a formation the 1st film of each substrate 9 that solar cell substrate retainer 6 keeps.Similarly, by carrying mechanism 30, solar cell substrate retainer 6 is moved to ensuing film forming room successively.After film forming in each film forming room (the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23, the 4th film forming room 24) terminates, by carrying mechanism 30, solar cell substrate retainer 6 is imported to relief chamber 4.After air is released to relief chamber 4, solar cell substrate retainer 6 is fetched into the outside of the manufacturing installation 100 of solar cell.
In each film forming room (the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23, the 4th film forming room 24), be provided with cathode electrode 7 and anode electrode 8.The position relationship of cathode electrode 7 and anode electrode 8 across the 1st film forming room 21 of mobile room 3 and the 2nd film forming room 22, with the 3rd film forming room 23 and the 4th film forming room 24 in reverse.That is, the 1st film forming room 21 and the 2nd film forming room 22 each in, cathode electrode 7 is positioned at downside in FIG, and anode electrode 8 is positioned at upside in FIG.In contrast, the 3rd film forming room 23 and the 4th film forming room 24 each in, cathode electrode 7 is positioned at upside in FIG, and anode electrode 8 is positioned at downside in FIG.Solar cell substrate retainer 6 is by the surperficial 9a(reference Fig. 3 along opposing substrate 9 mobile room 3 in) direction that intersects is (such as, substantially vertical direction) move abreast, thus all to carry out film forming close to the state on anode electrode 8 in which film forming room.
Solar cell substrate retainer 6 is carried in the direction of the surperficial 9a along substrate 9 in the major part of carrying mechanism 30 from the 1st film forming room 21 to the 4th film forming room 24 in transport path under the state of not open atmosphere.Specifically, carrying mechanism 30 has the 1st carrying mechanism 31, the 2nd carrying mechanism 32 and the 3rd carrying mechanism 33.
1st carrying mechanism 31 is can along the surperficial 9a(of substrate 9 with reference to Fig. 3) carry out the mechanism of carrying.Such as, solar cell substrate retainer 6 is transported to the 1st film forming room 21, the 2nd film forming room 22 and mobile room 3 from load chamber 1 along the surperficial 9a of substrate 9 by the 1st carrying mechanism 31 successively.Such as, the 1st carrying mechanism 31 has stator 31a, mover 31b and maintaining part 31c((a) with reference to Fig. 5).Stator 31a extends on the direction of the surperficial 9a along substrate 9.Mover 31b is configured to move along the length direction of stator 31a.Such as, stator 31a and mover 31b also can form that a side has permanent magnet and the opposing party has the such linear motor of electromagnet.Maintaining part 31c is combined with mover 31b, keeps solar cell substrate retainer 6 to move together with mover 31b.Near side 6a, 6b that maintaining part 31c also can keep the side of the length direction along manufacturing installation 100 in 4 side 6a ~ 6d of such as solar cell substrate retainer 6 ((a) with reference to Fig. 2, Fig. 5).
2nd carrying mechanism 32 is can along the surperficial 9a(with substrate 9 with reference to Fig. 3) direction (such as, substantially vertical direction) that intersects carries out the mechanism of carrying.Such as, the 2nd carrying mechanism 32 makes solar cell substrate retainer 6 move to the position corresponding with the anode electrode 8 of the 3rd film forming room 23 from the position corresponding with the anode electrode 8 of the 2nd film forming room 22 in mobile room 3.Such as, the 2nd carrying mechanism 32 has stator 32a, mover 32b and maintaining part 32c((b) with reference to Fig. 5).The direction (such as, substantially vertical direction) that stator 32a intersects at the surperficial 9a with substrate 9 is upper to be extended.Stator 32a is such as configured at the opposition side of stator 31a for solar cell substrate retainer 6.Mover 32b is configured to move along the length direction of stator 32a.Such as, stator 32a and mover 32b also can form that a side has permanent magnet and the opposing party has the such linear motor of electromagnet (linearmotor).Maintaining part 32c is combined with mover 32b, keeps solar cell substrate retainer 6 to move together with mover 32b.Near the side 6c that maintaining part 32c also can keep the side intersected with the length direction of manufacturing installation 100 in 4 of such as solar cell substrate retainer 6 side 6a ~ 6d ((b) with reference to Fig. 2, Fig. 5).
3rd carrying mechanism 33 is can along the surperficial 9a(of substrate 9 with reference to Fig. 3) carry out the mechanism of carrying.Such as, solar cell substrate retainer 6 is transported to the 3rd film forming room 23, the 4th film forming room 24, relief chamber 4 from mobile room 3 along the surperficial 9a of substrate 9 by the 3rd carrying mechanism 33 successively.Such as, the 3rd carrying mechanism 33 has stator 33a, mover 33b and maintaining part 33c((c) with reference to Fig. 5).Stator 33a extends on the direction of the surperficial 9a along substrate 9.Mover 33b is configured to move along the length direction of stator 33a.Such as, stator 33a and mover 33b also can form that a side has permanent magnet and the opposing party has the such linear motor of electromagnet.Maintaining part 33c is combined with mover 33b, keeps solar cell substrate retainer 6 to move together with mover 33b.Near side 6a, 6b that maintaining part 33c also can keep the side along direct of travel in 4 side 6a ~ 6d of such as solar cell substrate retainer 6 ((c) with reference to Fig. 2, Fig. 5).
Like this, solar cell substrate retainer 6 is carried in the direction of the surperficial 9a along substrate 9, so solar cell substrate retainer 6 need not be made significantly to reverse just can form film at two of substrate 9 face (surperficial 9a and back side 9b) in the major part of carrying mechanism 30 from the 1st film forming room 21 to the 4th film forming room 24 in transport path under the state of not open atmosphere.Thus, the operation that there is no need for solar cell substrate retainer 6 is reversed (for rotate atmosphere opening, evacuation operation etc.), and compared to the situation of carrying out reversing, the size of mobile room 3 can be reduced.Such as, the moving of transverse direction (direction substantially vertical with the surperficial 9a of the substrate 9) size of mobile room 3 can carried out with respect to the 2nd carrying mechanism 32 and be restricted to irreducible minimum.
Next, use Fig. 2 and Fig. 3 that the structure of solar cell substrate retainer 6 is described.Fig. 2 is the vertical view of the structure that solar cell substrate retainer 6 is shown, is the figure of the structure illustrated when such as observing solar cell substrate retainer 6 in FIG from below.Fig. 3 is the profile of the structure that solar cell substrate retainer 6 is shown, is the figure having carried out section when cutting with the A-A line of Fig. 2 is shown.
As shown in Figure 2, in solar cell substrate retainer 6, multiple substrate 9-1 ~ 9-16 can be loaded, and to multiple substrate 9-1 ~ 9-16 film forming simultaneously.Each substrate 9 is formed by the material (such as, crystal) being such as principal component with semiconductor (such as, silicon), is the substrate should piling up mutually different films in order to form heterojunction solar battery this two side of surperficial 9a and back side 9b.
Solar cell substrate retainer 6 as shown in Figure 3, has solar cell substrate pallet 61 and solar cell substrate pressing plate 62.Substrate 9 is fixed to its edge and is clamped by solar cell substrate pallet 61 and solar cell substrate pressing plate 62.In addition, solar cell substrate pallet 61 and solar cell substrate pressing plate 62 are all provided with peristome 61a, 62a, and substrate 9 exposes in the mode enabling surperficial 9a and back side 9b and be exposed to plasma respectively.That is, solar cell substrate retainer 6 keeps multiple substrate 9-1 ~ 9-16(with reference to Fig. 2 in the mode making this two side of the surperficial 9a in each substrate 9 and back side 9b (with reference to Fig. 3) and expose).Thereby, it is possible to film forming is carried out in surperficial 9a in each substrate 9 and these two faces of back side 9b.In solar cell substrate pallet 61 and solar cell substrate pressing plate 62, as the pottery such as aluminium (aluminum), aluminium oxide (alumina) (ceramics) class material, carbon compound (carboncomposite) material etc. that its material can use effects on surface to carry out alumite (alumite) to process.
Next, use Fig. 4 that the structure of each film forming room (the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23, the 4th film forming room 24) is described.Fig. 4 is the figure of the vertical view illustrated when the 1st film forming room 21 shown in Fig. 1 of sening as an envoy to have rotated 90 ° to the right.
1st film forming room 21 be by chamber (chamber) wall CH surround can the space of evacuation.In the wall CH of chamber, be formed with exhaust outlet CHa and supply port CHb.In the 1st film forming room 21, be configured with anode electrode 8 and cathode electrode 7 in mutually relative mode.In cathode electrode 7, be provided with multiple peristome 7a such as spurting.Cathode electrode 7 is such as electrically connected with high frequency electric source 10.Anode electrode 8 is such as electrically connected with ground connection (ground) current potential.
Via exhaust outlet CHa by vacuum pump to after having carried out evacuation in the 1st film forming room 21, as shown in Figure 4, by the 1st carrying mechanism 31 solar cell substrate retainer 6 moved into anode electrode 8 side and be configured near anode electrode 8.Solar cell substrate retainer 6 is such as loaded as to contact with anode electrode 8.Now, by solar cell substrate retainer 6 such as surperficial 9a in 2 interareas (surperficial 9a and back side 9b) in each substrate 9 of keeping towards cathode electrode 7 side.Then, space S P between anode electrode 8 and cathode electrode 7, passes through the peristome 7a of injection (shower) shape of supply port CHb and cathode electrode 7 from supplies for gas (not shown) through process gas control system 11 and supplies process gas (Processgas).In addition, the high frequency power supplied from high frequency electric source 10 (high frequency bias) is applied to cathode electrode 7, in the space S P between cathode electrode 7 and anode electrode 8, generates plasma P L.The chemically reactive substance generated in plasma P L becomes film forming precursor, carries out reacting and form the film of expectation at the interarea (being surperficial 9a in this case) of substrate 9.In addition, solar cell substrate retainer 6 is such as when being configured to contact with anode electrode 8, the interarea (being surperficial 9a in this case) being exposed to plasma P L only in 2 interareas of substrate 9 carries out film forming, does not carry out film forming at the interarea (being back side 9b in this case) of the opposition side contacted with anode electrode 8.In addition, although not shown, anode electrode 8 is controlled the temperature of solar cell substrate retainer 6 and substrate 9 by heater (heater) by heating.Contributive process gas, reaction product is not had to be discharged to outside film forming room via exhaust outlet CHa by vacuum pump to reaction.
In addition, about the 2nd film forming room 22, by solar cell substrate retainer 6 surperficial 9a in 2 interareas (surperficial 9a and back side 9b) in each substrate 9 of keeping also towards cathode electrode 7 side, this point carrying out film forming in the surperficial 9a side of each substrate 9 is same as described above.Relative to this, about the 3rd film forming room 23 and the 4th film forming room 24, by solar cell substrate retainer 6 back side 9b in 2 interareas (surperficial 9a and back side 9b) in each substrate 9 of keeping towards cathode electrode 7 side, this point carrying out film forming in the 9b side, the back side of each substrate 9 is different from above-mentioned.Other points are same as described above.
Next, use Fig. 1 and Fig. 5 that film formation process is described.The (a) and (b) of Fig. 5, (c) are the figure of action when observing the 1st carrying mechanism 31, the 2nd carrying mechanism 32 and the 3rd carrying mechanism 33 in FIG from below respectively.
Use N-shaped monocrystalline silicon substrate as substrate 9, N-shaped monocrystalline silicon substrate (substrate 9) is arranged at solar cell substrate retainer 6, using the sensitive surface (surperficial 9a) making the peristome 62a side of solar cell substrate pressing plate 62 become the side becoming sunlight incidence as solar cell plays a role when, and the peristome 61a side of solar cell substrate pallet 61 is made to become back side 9b.Under the state closing gate valve 5-1, drop into solar cell substrate retainer 6 to load chamber 1, and load chamber 1 is carried out evacuation.Afterwards, under the state opening gate valve 5-1, the 1st carrying mechanism 31 makes solar cell substrate retainer 6 move to the 1st film forming room 21.In the mode making the peristome 62a side of solar cell substrate pressing plate 62 be exposed to plasma P L, solar cell substrate retainer 6 is configured near anode electrode 8.Then, at closed shutter valve 5-1,5-2 by after carrying out evacuation in the 1st film forming room 21, in order to make i type noncrystalline silicon layer carry out film forming, in the 1st film forming room 21, import silane gas and hydrogen as process gas.Now, such as by process gas control system 11 etc., be set to the scope making the relative silane gas flow of the flow of hydrogen become 0 ~ 20 times, and carry out control and make pressure become certain value of the scope of 50 ~ 500Pa, certain value that control becomes 100 ~ 200 DEG C is carried out to substrate temperature.Such as, 10 ~ 100mW/cm is applied between target electrode 7 and anode electrode 8 2power density high frequency power (high frequency bias) and above-mentioned process gas is discharged.Thus, such as thickness is made to be that the i type noncrystalline silicon layer of 2 ~ 10nm carries out film forming in the surperficial 9a side of each substrate 9.
Next, under the state opening gate valve 5-2, the 1st carrying mechanism 31 makes solar cell substrate retainer 6 move to the 2nd film forming room 22.Then, at closed shutter valve 5-2,5-3 by after having carried out evacuation in the 2nd film forming room 22, in order to make p-type noncrystalline silicon layer film forming, silane gas, diborane gas and hydrogen are imported to as process gas in the 2nd film forming room 22.Now, such as by process gas control system 11 etc., set respectively, become 0.4 ~ 5.0% to make the diborane gas flow of relative silane gas flow and make the flow of the hydrogen of relative silane gas flow become the scope of 0 ~ 20 times, and control in the mode of certain value of the scope becoming 50 ~ 500Pa, certain value that control becomes 100 ~ 200 DEG C is carried out to substrate temperature.Such as, 10 ~ 100mW/cm is applied between target electrode 7 and anode electrode 8 2power density high frequency power (high frequency bias) and above-mentioned process gas is discharged.Thus, thickness is such as made to be the surperficial 9a side film forming of p-type noncrystalline silicon layer at each substrate 9 of 2 ~ 10nm.
In addition, in order to make band gap compared with p-type noncrystalline silicon layer wider and the p-type noncrystalline silicon carbide layer film forming that light transmission is higher, also methane (methane) gas, monomethylsilane (monomethylsilane) gas can be used as process gas.
Next, under the state opening gate valve 5-3, the 1st carrying mechanism 31 makes solar cell substrate retainer 6 move to mobile room 3.Specifically, as shown in (a) of Fig. 5, the 1st carrying mechanism 31 makes solar cell substrate retainer 6 move along the surperficial 9a of each substrate 9.That is, the 1st carrying mechanism 31 makes solar cell substrate retainer 6 move from the position near the anode electrode 8 the 2nd film forming room 22 to the position corresponding with the anode electrode 8 of the 2nd film forming room 22 in mobile room 3.
Then, the 2nd carrying mechanism 32, as shown in (b) of Fig. 5, remains in the solar cell substrate retainer 6 of the position corresponding with the anode electrode 8 of the 2nd film forming room 22 in mobile room 3.Afterwards, the 1st carrying mechanism 31 removes the maintenance of solar cell substrate retainer 6.2nd carrying mechanism 32 makes solar cell substrate retainer 6 transverse shifting in mobile room 3.Specifically, the 2nd carrying mechanism 32 makes solar cell substrate retainer 6 upper mobile in the direction (such as, relative to (b) paper of Fig. 5 direction of close front) substantially vertical with the surperficial 9a of each substrate 9.That is, the 2nd carrying mechanism 32 makes solar cell substrate retainer 6 move from the position corresponding with the anode electrode 8 of the 2nd film forming room 22 mobile room 3 to the position corresponding with the anode electrode 8 of the 3rd film forming room 23 in mobile room 3.In addition, now gate valve 5-3,5-4 also can close.
And then the 3rd carrying mechanism 33, as shown in (c) of Fig. 5, remains in the solar cell substrate retainer 6 of the position corresponding with the anode electrode 8 of the 3rd film forming room 23 in mobile room 3.Afterwards, the 2nd carrying mechanism 32 removes the maintenance of solar cell substrate retainer 6.Under the state opening gate valve 5-4, the 3rd carrying mechanism 33 makes solar cell substrate retainer 6 move to the 2nd film forming room 23.Specifically, as shown in (c) of Fig. 5, the 3rd carrying mechanism 33 makes solar cell substrate retainer 6 move along the surperficial 9a of each substrate 9.That is, the 3rd carrying mechanism 33 makes solar cell substrate retainer 6 move from the position corresponding with the anode electrode 8 of the 3rd film forming room 23 mobile room 3 to the position near the anode electrode 8 in the 3rd film forming room 23.
Solar cell substrate retainer 6 passes through in mobile room 3 horizontal (direction substantially vertical with the surperficial 9a of each substrate 9) and moves, thus in the mode making the peristome 61a side of solar cell substrate pallet 61 be exposed to plasma, solar cell substrate retainer 6 is configured near anode electrode 8.Then, at closed shutter valve 5-4,5-5 by after having carried out evacuation in the 3rd film forming room 23, in order to make i type noncrystalline silicon layer film forming, silane gas and hydrogen are imported in the 3rd film forming room 23 as process gas.Now, such as by process gas control system 11 etc., be set to the scope making the flow of the hydrogen of relative silane gas flow become 0 ~ 20 times, control in the mode making pressure become certain value of the scope of 50 ~ 500Pa, substrate temperature is controlled to the certain value becoming 100 ~ 200 DEG C.Such as, 10 ~ 100mW/cm is applied between target electrode 7 and anode electrode 8 2power density high frequency power (high frequency bias) and above-mentioned process gas is discharged.Thus, thickness is such as made to be the back side 9b side film forming of i type noncrystalline silicon layer at each substrate 9 of 2 ~ 10nm.
Next, under the state opening gate valve 5-5, the 3rd carrying mechanism 33 makes solar cell substrate retainer 6 move to the 4th film forming room 24.Then, at closed shutter valve 5-5,5-6 by after having carried out evacuation in the 4th film forming room 24, in order to make N-shaped noncrystalline silicon layer film forming, silane gas, phosphine gas and hydrogen are imported to as process gas in the 4th film forming room 24.Now, such as by process gas control system 11 etc., carry out respectively setting to make the phosphine gas flow of relative silane gas flow become 0.4 ~ 5.0% and making the flow of the hydrogen of relative silane gas flow become the scope of 0 ~ 20 times, and carry out controlling to make pressure become certain value of the scope of 50 ~ 500Pa, certain value that control becomes 100 ~ 200 DEG C is carried out to substrate temperature.Such as, 10 ~ 100mW/cm is applied between target electrode 7 and anode electrode 8 2power density high frequency power (high frequency bias) and above-mentioned process gas is discharged.Thus, thickness is such as made to be the back side 9b side film forming of N-shaped noncrystalline silicon layer at each substrate 9 of 2 ~ 20nm.
After film forming in the 4th film forming room 24 terminates, under the state opening gate valve 5-6, the 3rd carrying mechanism 33 makes solar cell substrate retainer 6 move to relief chamber 4.Then, under the state closing gate valve 5-6, after air is released to relief chamber 4, take out solar cell substrate retainer 6.Like this, form the duplexer of i type noncrystalline silicon layer and p-type noncrystalline silicon layer in the sensitive surface side of N-shaped monocrystalline silicon substrate, side forms the duplexer of i type noncrystalline silicon layer and N-shaped noncrystalline silicon layer overleaf.
According to more than, in the film formation device of the capacitive coupling plasma CVD mode of the plasma generated at the high-frequency electric field employed by putting between relative cathode electrode 7 and anode electrode 8, without the need to substrate 9 or solar cell substrate retainer 6 being fetched into the mechanism that device is outer or make substrate 9 or solar cell substrate retainer 6 reverse, and the noncrystalline silicon layer film forming of formation heterojunction solar battery can be made continuously on the two sides of substrate 9.
Capacitive coupling plasma CVD is compared to inductance coupling high type plasma CVD method, ionization in plasma is more steady, so to the reaction product matter such as silane gas superfluous the tendency of decomposing more weak, therefore favourable on this aspect of the high-quality amorphous film silicon layer film forming making defect in film few of applicable heterojunction type solar cell.
In addition, in the present embodiment, film forming is carried out for each layer in independently film forming room, but the film forming of continuous print film also can be carried out in same film forming room, such as also can by making i type noncrystalline silicon layer and p-type noncrystalline silicon layer film forming and omit the 2nd film forming room 22 continuously in the 1st film forming room 21.In addition, the film forming order of sensitive surface side and rear side also can be made contrary.And, also preparation heating chamber can be set between load chamber 1 and the 1st film forming room 21.
In addition, p-type monocrystalline silicon substrate, N-shaped polycrystalline silicon substrate, p-type polycrystalline silicon substrate also can be used as crystal substrate used for solar batteries.
As described above, in execution mode 1, solar cell substrate retainer 6 plane earth keeps multiple substrate 9-1 ~ 9-16(with reference to Fig. 2) to make this two side of the surperficial 9a in each substrate 9 and back side 9b (with reference to Fig. 3) expose.Then, solar cell substrate retainer 6 is carried in the direction of the surperficial 9a along substrate 9 in the major part of carrying mechanism 30 from the 1st film forming room 21 to the 4th film forming room 24 in transport path under the state of not open atmosphere.Thus, solar cell substrate retainer 6 need not be made significantly to reverse and can in two of substrate 9 face (surperficial 9a and back side 9b) film forming, so the operation that there is no need for making solar cell substrate retainer 6 reverse (for rotate atmosphere opening, evacuation operation etc.), and compared to the situation of carrying out reversing, the size of mobile room 3 can be reduced.Therefore, it is possible to shorten manufacturing process, and the maximization of manufacturing installation can be suppressed, so the manufacturing cost of heterojunction solar battery can be reduced.
In addition, in execution mode 1, the 1st film forming room 21 and the 2nd film forming room 22 separately in the position relationship of cathode electrode 7 and anode electrode 8 and the 3rd film forming room 23 and the 4th film forming room 24 separately in cathode electrode 7 contrary with the position relationship of anode electrode 8.Thus, substrate 9 need not be made to reverse, solar cell substrate retainer 6 is just transported to the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23 and the 4th film forming room 24 by carrying mechanism 30 successively, thus can carry out film forming to the surperficial 9a in each substrate 9 and this two sides of back side 9b.Thus, the operation that there is no need for solar cell substrate retainer 6 is reversed (for rotate atmosphere opening, evacuation operation etc.), and compared to the situation of carrying out reversing, the size of mobile room 3 can be reduced.Such as, relative to the moving of transverse direction (direction substantially vertical with the surperficial 9a of substrate 9) of being undertaken by the 2nd carrying mechanism 32, the size of mobile room 3 can be restricted to irreducible minimum.Therefore, it is possible to shorten manufacturing process, and the maximization of manufacturing installation can be suppressed, so the manufacturing cost of heterojunction crystal solar cell can be reduced.
In addition, in execution mode 1, in carrying mechanism 30, solar cell substrate retainer 6, along the surperficial 9a of substrate 9, is transported to the 1st film forming room 21, the 2nd film forming room 22 and mobile room 3 from load chamber 1 by the 1st carrying mechanism 31 successively.2nd carrying mechanism 32 makes solar cell substrate retainer 6 move to the position corresponding with the anode electrode 8 of the 3rd film forming room 23 from the position corresponding with the anode electrode 8 of the 2nd film forming room 22 in mobile room 3.Solar cell substrate retainer 6, along the surperficial 9a of substrate 9, is transported to the 3rd film forming room 23, the 4th film forming room 24, relief chamber 4 from mobile room 3 by the 3rd carrying mechanism 33 successively.Thereby, it is possible to realize making substrate 9 reverse by easy structure just can carry out the device of film forming to these two faces of the surperficial 9a in substrate 9 and back side 9b.
In addition, in execution mode 1,1st carrying mechanism 31 keeps near side 6a, 6b of the side of the length direction along manufacturing installation 100 in 4 side 6a ~ 6d of such as solar cell substrate retainer 6,2nd carrying mechanism 32 keeps near the side 6c of the side intersected with the length direction of manufacturing installation 100 in 4 of such as solar cell substrate retainer 6 side 6a ~ 6d, and the 3rd carrying mechanism 33 keeps near side 6a, 6b of the side along direct of travel in 4 side 6a ~ 6d of such as solar cell substrate retainer 6.Namely, 1st carrying mechanism 31 and the 2nd carrying mechanism 32 keep near the different side in 4 of solar cell substrate retainer 6 side 6a ~ 6d, and the 2nd carrying mechanism 32 and the 3rd carrying mechanism 33 keep near the different side in 4 of solar cell substrate retainer 6 side 6a ~ 6d.Thereby, it is possible to carry out the handing-over of the solar cell substrate retainer 6 of the 1st carrying mechanism 31 and the 2nd carrying mechanism 32 smoothly, and the space being used for joining can be suppressed for compact space.In addition, the handing-over of the solar cell substrate retainer 6 of the 2nd carrying mechanism 32 and the 3rd carrying mechanism 33 can be carried out smoothly, and can be compact space by the spatial limitation being used for joining.
In addition, in execution mode 1, mobile room 3, on the direction of the surperficial 9a along substrate 9, connects the 1st film forming room 21 and the 2nd film forming room 22 and the 3rd film forming room 23 and the 4th film forming room 24.Thus, the stroke (stroke) when easily being made by the 2nd carrying mechanism 32 of carrying mechanism 30 solar cell substrate retainer 6 move from the position corresponding with the anode electrode 8 of the 2nd film forming room 22 to the position corresponding with the anode electrode 8 of the 3rd film forming room 23 in mobile room 3 suppresses shorter.
execution mode 2.
Next, use Fig. 6 and Fig. 7 that the manufacturing installation 200 of the solar cell of execution mode 2 is described.Fig. 6 and Fig. 7 is the vertical view of the structure of the manufacturing installation 200 schematically showing solar cell and an example of action.Below, be described centered by the part different from execution mode 1.
The manufacturing installation 200 of the solar cell of execution mode 2 is inline type CVD device system L1, L2 that such as multiple film forming room is connected in series via multiple gate valve being arranged 2 row in parallel and obtains.In system L1, load chamber 201-1, the 1st film forming room 221-1, the 2nd film forming room 222-1, the 3rd film forming room 223-1, the 4th film forming room 224-1, relief chamber 204-1 are connected in series via multiple gate valve 5-11 ~ 5-16.Similarly, in system L2, load chamber 201-2, the 1st film forming room 221-2, the 2nd film forming room 222-2, the 3rd film forming room 223-2, the 4th film forming room 224-2, relief chamber 204-2 are connected in series via multiple gate valve 5-21 ~ 5-26.
Between the 2nd film forming room 222-1,222-2 and the 3rd film forming room 223-1,223-2, be connected with the shared mobile room 203 of two row via gate valve 5-13,5-23,5-14,5-24.Mobile room 203, on the direction that the surperficial 9a with substrate 9 intersects, is connected to the 3rd film forming room 223-2 of the 2nd film forming room 222-1 and system L2 of system L1.In addition, on the direction that mobile room 203 intersects in the side contrary with the surperficial 9a with substrate 9, the 3rd film forming room 223-1 of the 2nd film forming room 222-2 and system L1 of system L2 is connected to.
Carrying mechanism 230 has the 1st carrying mechanism 231, the 2nd carrying mechanism 232, the 3rd carrying mechanism 233, the 4th carrying mechanism 234 and the 5th carrying mechanism 235.
As shown in Figure 6, solar cell substrate retainer 6-1, along the surperficial 9a of substrate 9, is transported to the 1st film forming room 221-1, the 2nd film forming room 222-1 and mobile room 203 from the load chamber 201-1 system L1 by the 1st carrying mechanism 231 successively.2nd carrying mechanism 232 makes solar cell substrate retainer 6-1 move abreast from the position corresponding with the anode electrode 8 of the 2nd film forming room 222-1 of system L1 to the position corresponding with the anode electrode 8 of the 3rd film forming room 223-2 of system L2 in mobile room 203.Solar cell substrate retainer 6-1, along the surperficial 9a of substrate 9, is transported to the 3rd film forming room 223-2 system L2, the 4th film forming room 224-2, relief chamber 204-2 by the 3rd carrying mechanism 233 successively from mobile room 203.
Now, the 1st film forming room 221-1 of system L1 and the 2nd film forming room 222-1 separately in cathode electrode 7 and anode electrode 8 position relationship, with the 3rd film forming room 223-2, the 4th film forming room 224-2 of system L2 separately in cathode electrode 7 and the position relationship of anode electrode 8 contrary.
In addition, as shown in Figure 7, solar cell substrate retainer 6-2, along the surperficial 9a of substrate 9, is transported to the 1st film forming room 221-2, the 2nd film forming room 222-2 and mobile room 203 from the load chamber 201-2 system L2 by the 4th carrying mechanism 234 successively.2nd carrying mechanism 232 makes solar cell substrate retainer 6-2 move abreast from the position corresponding with the anode electrode 8 of the 2nd film forming room 222-2 of system L2 to the position corresponding with the anode electrode 8 of the 3rd film forming room 223-1 of system L1 in mobile room 203.Solar cell substrate retainer 6-2, along the surperficial 9a of substrate 9, is transported to the 3rd film forming room 223-1 system L1, the 4th film forming room 224-1, relief chamber 204-1 by the 5th carrying mechanism 235 successively from mobile room 203.
Now, the 1st film forming room 221-2 of system L2 and the 2nd film forming room 222-2 separately in cathode electrode 7 and anode electrode 8 position relationship, with the 3rd film forming room 223-1, the 4th film forming room 224-1 of system L1 separately in cathode electrode 7 and the position relationship of anode electrode 8 contrary.
Thus, different from execution mode 1, in each system L1, L2, about the position relationship of the cathode electrode 7 in film forming room with anode electrode 8, even if do not reverse across mobile room 203, also can, in two of substrate 9 face film forming respectively, so be configured to the inner side making cathode electrode 7 by manufacturing installation 200 in all film forming room, make anode electrode 8 than the outside of cathode electrode 7 by manufacturing installation 200.That is, the cathode electrode 7 of each film forming room in system L1 is configured at system L2 side, and the cathode electrode 7 of each film forming room in system L2 is configured at system L1 side.
Now, as shown in Figure 8, pass through by the film forming room of correspondence (such as in system L1 and system L2,1st film forming room 221-1 and the 1st film forming room 221-2) in cathode electrode 7 be set to the inner side of manufacturing installation 200, thus the equipment such as process gas control system 211 grade, high frequency electric source intensively can be configured to the inner side of manufacturing installation 200, manufacturing installation 200 can be made miniaturized.In addition, do not connect high frequency electric source, process gas system, and constructed simple anode electrode 8 and be configured to than cathode electrode 7 in the outer part, thus make film forming room's atmosphere opening and carry out the upkeep operation cleaned when waiting to become easy.
Like this, in execution mode 2, just can to two of substrate face film forming continuously, and be passed through to configure film forming room side by side without the need to the operation making substrate reverse by simple structure, disposal ability increases, and can reduce manufacturing cost.
execution mode 3.
Next, the manufacturing installation of the solar cell of execution mode 3 is described.Below, be described centered by the part different from execution mode 1 and execution mode 2.
In execution mode 1 and execution mode 2, specifically do not limit the shape of peristome 61a, 62a in solar cell substrate retainer 6, but in execution mode 3, research such below the shape of peristome 61a, 62a having been carried out in solar cell substrate retainer 306.
Solar cell substrate retainer 306 has the structure of such as Fig. 9 ~ as shown in Figure 13.
Fig. 9 illustrates to prepare solar cell substrate pallet 61 but the vertical view of the structure of solar cell substrate retainer 306 under the state not yet loading substrate 9 and solar cell substrate pressing plate 362.On solar cell substrate pallet 61, as shown in Figure 2, be configured to rectangular by multiple substrate 9-1 ~ 9-16, wherein, Fig. 9 illustrates the part corresponding with 1 substrate 9.Figure 10 illustrates the figure solar cell substrate pallet 61 shown in Fig. 9 having been carried out section when cutting along B-B line.As shown in Figure 10, near the edge portion 61a1 of the peristome 61a in solar cell substrate pallet 61, spot-facing (counterboring) portion 61b is formed with to frame-like.
Figure 11 be illustrate on solar cell substrate pallet 61, to load substrate 9 and mounting solar cell substrate pressing plate 362 and secure substrate 9 state under the vertical view of structure of solar cell substrate retainer 306.Figure 11 is the vertical view corresponding with Fig. 9, and the part corresponding with 1 substrate 9 is shown.Figure 12 illustrates the solar cell substrate pressing plate 362 shown in Fig. 9 and solar cell substrate pallet 61 to carry out the figure of section when cutting along C-C line, and Figure 13 illustrates the solar cell substrate pressing plate 362 shown in Fig. 9 and solar cell substrate pallet 61 to carry out the figure of section when cutting along D-D line.
As shown in figure 12, the width in the direction along C-C line of the peristome 362a of solar cell substrate pressing plate 362 is narrower than substrate 9, so substrate 9 is clamped at a pair edge part orthogonal with the direction along C-C line by solar cell substrate pallet 61 and solar cell substrate pressing plate 362 and fixed.On the other hand, as shown in figure 13, or than the substrate 9 wide 0.5 ~ 2.0mm degree identical with substrate 9 of the width along the peristome 362a of the solar cell substrate pressing plate 362 in the direction of D-D line, so the surperficial 9a of substrate 9 is all exposed to plasma.
In this condition in the same manner as execution mode 1, in the 1st film forming room 21, the 2nd film forming room 22, carry out film forming at the surperficial 9a of substrate 9, next in the 3rd film forming room 23, the 4th film forming room 24, carry out film forming (with reference to Fig. 1) at the back side 9b of substrate 9.Figure 14 illustrates the D-D section of the substrate 9 after film forming.To stack gradually and by film forming at surperficial 9a, the i type noncrystalline silicon layer 14 of substrate 9 and p-type noncrystalline silicon layer 15, at the back side 9b of substrate 9, i type noncrystalline silicon layer 14 and N-shaped noncrystalline silicon layer 16 stack gradually and by film forming.
As shown in figure 14, at surperficial 9a, carry out film forming in roughly all parts of substrate 9, but in the edge part 9b1 of 9b overleaf, existed and covered and the region of non-film forming by solar cell substrate pressing plate 362.Therefore, till near the end face arriving substrate 9, can not contact with the N-shaped noncrystalline silicon layer 16 of 9b film forming overleaf at the p-type noncrystalline silicon layer 15 of surperficial 9a film forming, the leakage current in end face portion can be suppressed thus.In addition, roughly all parts stacked i type noncrystalline silicon layer 14 in the surperficial 9a of substrate 9 and p-type noncrystalline silicon layer 15, the diode configuration of p-i-n type is formed with the silicon substrate of N-shaped, so overleaf on 9b the edge part of i type noncrystalline silicon layer 14 and the non-film forming of N-shaped noncrystalline silicon layer 16 also play function as solar cell, can the effective area as solar cell be guaranteed wider, so can battery conversion efficiency be improved.Such as, the width of the non-film-forming region of the edge part 9b1 of back side 9b is preferably 0.5 ~ 5mm.
As described above, in execution mode 3, surperficial 9a(sensitive surface at substrate 9) film forming time, make the width of the peristome 362a along the solar cell substrate retainer 306 on the 1st direction (direction along C-C line) of the surperficial 9a of substrate 9 narrower than the width of substrate 9, make the width of the peristome 362a along the solar cell substrate retainer 306 on the 2nd direction (direction along D-D line) of the surperficial 9a of substrate 9 equal with the width of substrate 9 or wider than substrate 9.Thus, film forming area can, while maintenance substrate 9, be guaranteed wider by solar cell substrate retainer 306.Its result, can guarantee wider using the effective area as solar cell, so can improve battery conversion efficiency.
In addition, the shape of the peristome 362ai of the solar cell substrate pressing plate 362i in solar cell substrate retainer 306i also can be made to become as shown in Figure 15, be only fixed in the bight of substrate 9.That is, peristome 362ai has: the main edge 362ai1 extended accordingly with the silhouette edge of substrate 9; And connect 2 main edge 362ai1 adjoining and the inclination edge 362ai2 extended in the mode of intersecting with the silhouette edge of substrate 9 at the adjacent corner of substrate 9.In this case, can reduce further, by the area of the non-film-forming region of the surperficial 9a of solar cell substrate pressing plate 362i covering, battery conversion efficiency can be improved further.
Or, also can as shown in figure 16, make the peristome 362aj of the solar cell substrate pressing plate 362j in solar cell substrate retainer 306j become the shape of the projection being provided with pawl (claw) shape.That is, peristome 362aj has: the main edge 362aj1 extended accordingly with the silhouette edge of substrate 9; And from main edge 362aj1 the raised 362aj2 outstanding to the inner side of peristome 362aj.In this case, can reduce further, by the area of the non-film-forming region of the surperficial 9a of solar cell substrate pressing plate 362i covering, battery conversion efficiency can be improved further.
Or, also as shown in figure 17, the peristome 362ak of the solar cell substrate pressing plate 362k in solar cell substrate retainer 306k can be made to become stair-stepping shape, fixes substrate 9.That is, peristome 362ak has: the main edge 362ak1 extended accordingly with the silhouette edge of substrate 9; And connect the end difference 36ak2 of 2 relative main edge 362ak1.In this case, also end difference 36ak2 can be set in the mode corresponding with the collecting electrodes 17 that should be formed in substrate 9.Such as, as shown in Figure 18 and Figure 19, in the surperficial 9a of substrate 9 by end difference 36ak2(with reference to Figure 17) form collecting electrodes 17 in the region (non-film-forming region 19) that covers.Figure 18 observes from surperficial 9a side the vertical view defining the substrate 9 of the state of collecting electrodes 17, and Figure 19 illustrates the figure substrate 9 of Figure 18 having been carried out section when cutting along E-E line.As shown in figure 19, above the i type noncrystalline silicon layer 14 of the surperficial 9a side of substrate 9 and the non-film-forming region 19 of the non-film forming of p-type noncrystalline silicon layer 15, collecting electrodes 17 is formed.That is, become the dash area of collecting electrodes 17 hardly as the solar cell baseplate part played under the non-film-forming region 19 of function, so sunlight is incident hardly, the effective area therefore as solar cell can not reduce.In other words, the effective area as solar cell can be guaranteed, and the material used in the film forming of i type noncrystalline silicon layer 14 and p-type noncrystalline silicon layer 15 can be saved.
In addition, i type noncrystalline silicon layer 14 and p-type noncrystalline silicon layer 15 are formed by indium tin oxide (tin-dopedindiumoxide) (ITO), zinc oxide (ZnO 2) etc. oxide conductor form transparency conducting layer 18, so the electric charge generated in substrate 9 is transported to collecting electrodes 17 via transparency conducting layer 18, even if therefore non-film-forming region 19 and collecting electrodes 17 connect, the conversion efficiency of solar cell also can not be made to reduce due to the increase of contact resistance.
In addition, in the end face portion of substrate 9, if p-type noncrystalline silicon layer 15 does not contact with N-shaped noncrystalline silicon layer 16, leakage current can not be there is, so arrange non-film-forming region without the need to a whole week fixing on the back side 9b of substrate 9.Such as, also can be as shown in figure 20, the spot-facing portion 361bp of the solar cell substrate pallet 361p in solar cell substrate retainer 306p is configured to be arranged at a pair edge part orthogonal with G-G line, and be not arranged at a pair edge part orthogonal with F-F line, and as shown in figure 21, make the peristome 362ap of the solar cell substrate pressing plate 362 in solar cell substrate retainer 306p be configured to as follows: the width in H-H direction is narrower than substrate 9, the width in I-I direction is identical with substrate 9 or wider than substrate 9.Figure 20 illustrates to prepare solar cell substrate pallet 361p but the vertical view of the structure of solar cell substrate retainer 306p under the state not yet loading substrate 9 and solar cell substrate pressing plate 362p.Figure 21 be illustrate on solar cell substrate pallet 61, to load substrate 9 and then mounting solar cell substrate pressing plate 362p and secure substrate 9 state under the vertical view of structure of solar cell substrate retainer 306p.
In this case, illustrate that the figure of the section carried out when cutting along H-H line by the solar cell substrate pressing plate 362p shown in Figure 21 and solar cell substrate pallet 361p becomes as shown in figure 22, illustrate that the figure of the section carried out when cutting along I-I line by the solar cell substrate pressing plate 362p shown in Figure 21 and solar cell substrate pallet 361p becomes as shown in figure 23.As shown in Figure 22 and Figure 23, connect with solar cell substrate pressing plate 362p at a pair edge part place orthogonal with H-H line with the surperficial 9a of substrate 9, shape that the back side 9b of substrate 9 connects with solar cell substrate pallet 361p at a pair edge part place orthogonal with I-I line secures substrate 9, so when the direction vertical from the surperficial 9a with substrate 9 has been had an X-rayed, the non-film-forming region in the non-film-forming region in the surperficial 9a of substrate 9 and the back side 9b of substrate 9 has extended in the mode at the edge mutually complementally surrounding substrate 9.Thus, in end face portion, p-type noncrystalline silicon layer 15 is difficult to contact with N-shaped noncrystalline silicon layer 16.
execution mode 4.
Next, use Figure 24 that the manufacturing installation of the solar cell of execution mode 4 is described.Figure 24 is the fragmentary cross-sectional view of the film forming room of the manufacturing installation of the solar cell forming execution mode 4.Below, be described centered by the point different from execution mode 1 and execution mode 2.
In execution mode 1 and execution mode 2, by carrying out heating the temperature controlling substrate 9 with heater antianode electrode 8, but in execution mode 4, controlled the temperature of substrate 9 by the side, the non-film face process gas of the temperature with regulation being supplied to substrate 9.
Specifically, each film forming room (the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23, the 4th film forming room 24), except process gas control system (the 1st process gas control system) 11, also has process control system (the 2nd process gas control system) 412, process control system (the 3rd process gas control system) 413 and switching part 414.Process gas control system 11, in the same manner as execution mode 1, supplies process gas (the 1st gas or the 2nd gas) via the peristome 7a of cathode electrode 7 to film forming room.
On the other hand, process control system 412 supplies process gas (the 3rd gas) via the peristome 8a of anode electrode 8.Process control system 413 supplies process gas (the 4th gas) via the peristome 8b of anode electrode 8.In the process gas supplied from process gas control system 412 and 413, do not comprise gas, PH that such as silane gas etc. contains silicon 3, B 2h 6gas etc. contain the gas of the element of the such alloy of phosphorus (P) boron (B), and use the gas being formed separately by hydrogen, carbon dioxide, rare gas etc. or be made up of their combination.That is, in the process gas supplied from process gas control system 412 and 413, some independent gas or their mist that cannot form the gaseous species of film is used.These process gass are fed into film forming room inside, so can suppress the SiH generated in film forming room thus from the side, non-film face of substrate 9 by the space part of solar cell substrate pallet 61, solar cell substrate pressing plate 62, substrate 9 xfilm formation reaction material, the PH such as base (radical) 3, B 2h 6such dopant gas turns back to side, non-film face.
In addition, about the process gas supplied from process gas control system 412 and 413, the gas that temperature is mutually different is employed.Such as, the temperature of the process gas supplied from process gas control system 412 is lower than the temperature of the process gas supplied from process gas control system 413.
Then, switching part 414, according to the temperature of the substrate 9 that should control, carries out switching to make the one party in the 2nd process gas control system 412 and the 3rd process gas control system 413 carry out action.Such as, switching part 414 is when the temperature of the close process gas from process gas control system 412 supply of the temperature of the substrate 9 that should control, carry out switching to make the 2nd process gas control system 412 carry out action, when the temperature of the close process gas from process gas control system 413 supply of the temperature of the substrate 9 that should control, carry out switching to make the 3rd process gas control system 413 carry out action.
Next, membrane process is illustrated as.First, supply the hydrogen of low temperature from process gas control system 412, and carry out the scope that controls to make the temperature of substrate 9 become 100 ~ 150 DEG C.In this condition, supply the mist of silane and hydrogen from process gas control system 11 via cathode electrode 7.The total amount of the hydrogen supplied from process gas control system 11 and 412 is set as the scope of 1 ~ 20 times of silane gas flow.Then, by target electrode 7 supply high frequency power, process gas is discharged, start the film forming of i type noncrystalline silicon layer.Then, in film forming way, process gas control system is switched to 413 from 412, from the hydrogen of side, the non-film face supply high temperature of substrate 9, thus the scope of heating temperatures to 150 ~ 200 of substrate 9 DEG C is proceeded the film forming of i type noncrystalline silicon layer, make total film thickness be the i type noncrystalline silicon layer film forming of 2 ~ 10nm.
Thus, film forming is carried out at relatively low temperatures by the silicon substrate interface portion strong in epitaxially grown tendency, the i type noncrystalline silicon layer film forming making epitaxial growth be adequately suppressed thus, and then by improving film-forming temperature after, the film forming of the higher i type noncrystalline silicon layer of quality that in film, defect is few can be carried out continuously.In addition, high-quality i type noncrystalline silicon layer is defined as follows herein: the Density of hydrogen atoms in the film utilizing fourier-transform infrared line absorption spectrum (FTIR) method to calculate is the scope of 10 ~ 20%, and SiH2 is less than 1/10 in conjunction with the ratio that relative SiH combines.
In addition, although do not record in fig. 24, also can by possessing heater electrode etc. in anode electrode 8, thus in anode electrode 8 self also set temperature controlling organization.
In addition, about the control method of the process gas temperature that the side, non-film face to the substrate 9 in film forming supplies, also can replace the supply of the process gas that switching temperature is different, and as shown in figure 25, the heating arrangements that heats process gas is set and changes its heating-up temperature to carry out.Namely, each film forming room (the 1st film forming room 21, the 2nd film forming room 22, the 3rd film forming room 23, the 4th film forming room 24) also can replace beyond process gas control system 412, process gas control system 413 and switching part 414, and has process gas control system 415i.Process gas control system 415i has control system main body 415i1 and heating arrangements 415i2.Process gas control system 415i is supplied process gas from control system main body 415i1 to heating arrangements 415i2 and is heated to the temperature that specifies by heating arrangements 415i2, and the process gas after heating is supplied to film forming room via the peristome 8a of anode electrode 8 from the side, non-film face of substrate 9.Such as, when the film forming of silicon substrate interface portion, the process gas of the lower temperature do not heated is supplied by making heating arrangements 415i2 stop, after the i type noncrystalline silicon layer film forming be adequately suppressed making epitaxial growth, by making heating arrangements 415i2 action heat, thus the process gas that can supply high temperature is to improve the temperature of silicon substrate.
In addition, also following structure can be set to as shown in figure 26: relative to the structure shown in Figure 24, the peristome 8c also possessed via anode electrode 8 discharges the process gas gas extraction system 416j of process gas from the side, non-film face of substrate 9, thus the process gas that the side, non-film face to substrate 9 supply circulates.By applying this structure, control the temperature of substrate 9, so the gas of large discharge above needed for film forming can be supplied to side, non-film face, therefore, it is possible to the temperature of more easily carrying out substrate 9 controls.
Or, also following structure can be set to as shown in figure 27: relative to the structure shown in Figure 25, the peristome 8c also possessed via anode electrode 8 discharges the process gas gas extraction system 416j of process gas from the side, non-film face of substrate 9, thus the process gas that the side, non-film face to substrate 9 supply circulates.By applying this structure, control the temperature of substrate 9, so the gas of large discharge above needed for film forming can be supplied to side, non-film face, therefore, it is possible to the temperature of more easily carrying out substrate 9 controls.
In addition, in above-mentioned execution mode 4, describe the film forming of i type noncrystalline silicon layer, but also can be applied to the microcrystal silicon layer of the noncrystalline silicon layer of p-type and N-shaped, p-type and N-shaped, also can by such as reducing the temperature of substrate 9 in film forming to the gas of the back side 9b of substrate 9 supply low temperature from process gas control system 412, and the Density of hydrogen atoms improved in film, thus control band gap improves the engagement characteristics with electrode material etc.
utilizability in industry
As described above, the manufacturing installation of solar cell of the present invention and the manufacture method of solar cell are applicable to the manufacture of heterojunction solar battery.

Claims (18)

1. a manufacturing installation for solar cell, is characterized in that, possesses:
Substrate holder, the mode exposed with described 1st interarea and described 2nd both interareas that make the substrate of the 2nd interarea of the opposition side with the 1st interarea and described 1st interarea, plane earth keeps multiple described substrate;
Front film forming room, when described substrate holder is moved to anode electrode side, with by making described substrate holder touch on described anode electrode thus making isolate from the electric discharge that should occur towards described 2nd interarea of described anode electrode and make described 1st interarea be exposed to the mode of the described electric discharge that should occur, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make the 1st gas discharge, thus forming the 1st film at described 1st interarea of described substrate;
Rear film forming room, when described substrate holder is moved to anode electrode side, with by making described substrate holder touch on described anode electrode thus making isolate from the electric discharge that should occur towards described 1st interarea of described anode electrode and make described 2nd interarea be exposed to the mode of described electric discharge, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make the 2nd gas discharge, thus forming the 2nd film at described 2nd interarea of described substrate; And
Carrying mechanism, carries described substrate holder from described front film forming room to described rear film forming room, carries in described front film forming room and described rear film forming room on the direction along described 1st interarea under the state of not open atmosphere.
2. the manufacturing installation of solar cell according to claim 1, is characterized in that,
Described cathode electrode in described front film forming room and the position relationship of described anode electrode contrary with the position relationship of the described cathode electrode in described rear film forming room and described anode electrode.
3. the manufacturing installation of solar cell according to claim 2, is characterized in that,
Described carrying mechanism is carrying described substrate holder along described 1st interarea of described substrate from described front film forming room to the mobile room connecting described front film forming room and described rear film forming room along the direction of described 1st interarea, mobile indoor to the position corresponding with the described anode electrode of described rear film forming room, to make the side that described substrate holder is intersecting with described 1st interarea move up from the position corresponding with the described anode electrode of described front film forming room described, described 1st interarea along described substrate is carrying described substrate holder from described mobile room to described rear film forming room along the direction of described 1st interarea.
4. the manufacturing installation of solar cell according to claim 3, is characterized in that,
Described mobile room connects described front film forming room and described rear film forming room on the direction of described 1st interarea along described substrate.
5. the manufacturing installation of solar cell according to claim 3, is characterized in that,
Described mobile room is connected described front film forming room and described rear film forming room on the direction intersected with described 1st interarea of described substrate.
6. the manufacturing installation of solar cell according to claim 5, is characterized in that, also possesses:
2nd substrate holder, the mode exposed with described 1st interarea and described 2nd both interareas that make the 2nd substrate of the 2nd interarea of the opposition side with the 1st interarea and described 1st interarea, keeps described 2nd substrate;
Film forming room before 2nd, when described 2nd substrate holder is moved to anode electrode side, with by making described substrate holder touch on described anode electrode thus making described 2nd interarea isolate from the electric discharge that should occur and make described 1st interarea be exposed to the mode of the described electric discharge that should occur, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make described 1st gas discharge, thus forming the 1st film at described 1st interarea of described 2nd substrate;
Film forming room after 2nd, when described 2nd substrate holder is moved to anode electrode side, with by making described substrate holder touch on described anode electrode thus making described 1st interarea isolate from the electric discharge that should occur and make described 2nd interarea be exposed to the mode of described electric discharge, load described substrate holder, apply high frequency power between target electrode and described anode electrode and make described 2nd gas discharge, thus forming the 2nd film at described 2nd interarea of described 2nd substrate; And
2nd carrying mechanism, under the state of not open atmosphere, described 2nd substrate holder is carried from film forming room before the described 2nd to film forming room after the described 2nd, carry on the direction along described 1st interarea in film forming room after film forming room and the described 2nd before the described 2nd, wherein
Described cathode electrode before described 2nd in film forming room and the position relationship of described anode electrode are contrary with the position relationship of the described cathode electrode in film forming room after the described 2nd and described anode electrode,
Described mobile room is connected described front film forming room and described rear film forming room on the direction intersected with described 1st interarea of described substrate, and film forming room after film forming room and the described 2nd connect the described 2nd on the direction intersected with the side contrary with described 1st interarea of described substrate before.
7. the manufacturing installation of solar cell according to claim 6, is characterized in that,
Described 2nd carrying mechanism is carrying described 2nd substrate holder along described 1st interarea of described substrate from film forming room before the described 2nd to described mobile room along the direction of described 1st interarea, mobile indoor to the position that the described anode electrode of film forming room after with the described 2nd is corresponding, to make from the position corresponding with the described anode electrode of film forming room before the described 2nd side that described 2nd substrate holder is intersecting with described 1st interarea move up described, carry described 2nd substrate holder along described 1st interarea of described substrate from described mobile room to film forming room after the described 2nd along the direction of described 1st interarea.
8. the manufacturing installation of the solar cell according to any one in claim 1 ~ 7, is characterized in that,
Described substrate holder has substrate tray and substrate pressing plate,
Described substrate tray and described substrate pressing plate by respectively with substrate contacts carry out clamping and keep substrate,
The contact portion of described substrate and described substrate tray or described substrate pressing plate is configured to as follows: can not touch described substrate tray and described substrate pressing plate at the semiconductor layer of two face film forming of described substrate in end face portion, and is provided with and optionally covers and do not form the region of described semiconductor layer.
9. the manufacturing installation of the solar cell according to any one in claim 1 ~ 7, is characterized in that, also possesses:
1st process gas control system, to each of described front film forming room and described rear film forming room, supplies described 1st gas or described 2nd gas via described cathode electrode;
2nd process gas control system, to each of described front film forming room and described rear film forming room, via described anode electrode from side, non-film face supply the 3rd gas of described substrate;
3rd process gas control system, to each of described front film forming room and described rear film forming room, via described anode electrode from the 4th gas that side, the non-film face supplying temperature of described substrate is different from described 3rd gas; And
Switching part, the temperature according to the described substrate that should control switches, and carries out action to make the one party in described 2nd process gas control system and described 3rd process gas control system.
10. the manufacturing installation of solar cell according to claim 9, is characterized in that,
Also possess gas extraction system, this gas extraction system discharges described 3rd gas and described 4th gas via described anode electrode.
The manufacturing installation of 11. solar cells according to any one in claim 1 ~ 7, is characterized in that also possessing:
1st process gas control system, via described cathode electrode to described 1st gas of described front film forming room's supply, and via described cathode electrode to described 2nd gas of described rear film forming room's supply; And
4th process gas control system, has heating arrangements, to each of described front film forming room and described rear film forming room, via described anode electrode from side, the non-film face supply of described substrate by warmed-up 3rd gas of described heating arrangements.
The manufacturing installation of 12. solar cells according to claim 11, is characterized in that,
Also possess gas extraction system, this gas extraction system discharges described 3rd gas via described anode electrode.
13. 1 kinds of solar cells, are the solar cells using the manufacturing installation of the solar cell described in claim 8 to manufacture, it is characterized in that possessing:
Collecting electrodes, is configured at 1st region corresponding with the contact portion of described substrate and described substrate tray or described substrate pressing plate; And
Semiconductor layer, is configured at described 1st region of removing in surface and the 2nd region of remainder.
The manufacture method of 14. 1 kinds of solar cells, the mode plane earth exposed with described 1st interarea and described 2nd both interareas that make the substrate of the 2nd interarea of the opposition side with the 1st interarea and described 1st interarea is used to keep the substrate holder of multiple described substrate, manufacture the solar cell comprising described substrate, it is characterized in that possessing:
Move into operation, described substrate holder is moved to the anode electrode side in front film forming room;
1st film formation process, with by making described substrate holder touch on described anode electrode thus making isolate from the electric discharge that should occur towards described 2nd interarea of described anode electrode and make described 1st interarea be exposed to the mode of the described electric discharge that should occur, load described substrate holder, in described front film forming room, apply high frequency power between target electrode and described anode electrode and make the 1st gas discharge, thus forming the 1st film at described 1st interarea of the described substrate moved into;
Carrying operation, under the state of not open atmosphere by described substrate holder from the anode electrode side in film forming room after the described anode electrode side described front film forming room is transported to; And
2nd film formation process, with by making described substrate holder touch on described anode electrode thus making towards described 1st interarea of described anode electrode from the electric discharge isolation that should occur and make described 2nd interarea be exposed to the mode of described electric discharge, load described substrate holder, apply bias voltage between target electrode and described anode electrode in film forming room in the rear and make the 2nd gas discharge, thus form the 2nd film at described 2nd interarea of described substrate, wherein
Described cathode electrode in described front film forming room and the position relationship of described anode electrode contrary with the position relationship of the described cathode electrode in described rear film forming room and described anode electrode.
The manufacture method of 15. solar cells according to claim 14, is characterized in that,
Described carrying operation comprises:
Take out of operation, take out of described substrate holder along described 1st interarea of described substrate from described front film forming room along the direction of described 1st interarea;
Mobile process, described take out of operation after, along the direction that described 1st interarea with described substrate is substantially vertical, described substrate holder is made to move to the position corresponding with the described anode electrode of described rear film forming room from the position corresponding with the described anode electrode of described front film forming room; And
Move into operation, after described mobile process, on the direction along described 1st interarea, move into described substrate holder along the 1st interarea of described substrate to described rear film forming room.
The manufacture method of 16. solar cells according to claim 14 or 15, is characterized in that,
Described substrate holder has substrate tray and substrate pressing plate,
Described substrate tray and described substrate pressing plate by respectively with substrate contacts carry out clamping and keep substrate,
Optionally covering to make the semiconductor layer in two face film forming of described substrate can not touch described substrate tray and described substrate pressing plate in end face portion and arrange and under state that the mode that do not form the region of described semiconductor layer is configured with the contact portion of described substrate and described substrate tray or described substrate pressing plate, carrying out described 1st film formation process or described 2nd film formation process.
The manufacture method of 17. solar cells according to claim 14 or 15, is characterized in that,
In described 1st film formation process, via described cathode electrode to described 1st gas of described front film forming room's supply,
In described 2nd film formation process, via described cathode electrode to described 2nd gas of described rear film forming room's supply,
Described 1st film formation process and described 2nd film formation process each in, according to the temperature of the described substrate that should control, switch and carry out via described anode electrode from the 1st action of the side, non-film face of described substrate supply the 3rd gas and via the one party the 2nd action of described anode electrode the 4th gas different from described 3rd gas from side, the non-film face supplying temperature of described substrate.
The manufacture method of 18. solar cells according to claim 14 or 15, is characterized in that,
In described 1st film formation process, via described cathode electrode to described 1st gas of described front film forming room's supply,
In described 2nd film formation process, via described cathode electrode to described 2nd gas of described rear film forming room's supply,
Described 1st film formation process and described 2nd film formation process each in, via described anode electrode, the side, non-film face from described substrate after being heated by heating arrangements by the 3rd gas is supplied.
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