CN103088411A - Seed crystal fixing method for growth of silicon carbide crystals - Google Patents
Seed crystal fixing method for growth of silicon carbide crystals Download PDFInfo
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- CN103088411A CN103088411A CN201310025126XA CN201310025126A CN103088411A CN 103088411 A CN103088411 A CN 103088411A CN 201310025126X A CN201310025126X A CN 201310025126XA CN 201310025126 A CN201310025126 A CN 201310025126A CN 103088411 A CN103088411 A CN 103088411A
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Abstract
The invention relates to a seed crystal fixing method for the growth of silicon carbide crystals. The method comprises the following steps: firstly, carrying out film plating on the opposite surface of the growth surface of a seed crystal so as to obtain a seed crystal subjected to film plating; and then, enabling the growth surface of the seed crystal subjected to film plating to face a silicon carbide raw material, and bracing the seed crystal by using a bracket on a seed crystal holder. Through carrying out film plating on the opposite surface of the growth surface of the seed crystal, a situation that the seed crystal has no reverse sublimation phenomenon is guaranteed. A bracket is arranged on the seed crystal holder and used for bracing the seed crystal subjected to film plating, so that the meteorological transmission between the seed crystal and the seed crystal holder can be effectively suppressed, meanwhile, the heat conduction difference between the seed crystal and a back material is reduced, and the heat stress in the process of seed crystal growth is released better, and thereby defects are reduced, and the quality of crystals is improved.
Description
Technical field
The present invention relates to a kind of seed crystal fixing means for growing silicon carbice crystals.
Background technology
The SiC semiconductor material is the representative of third generation broad-band gap (Wide Band-gap Semiconductor, the WBS) semiconductor material that grows up after first-generation elemental semiconductors (Si) and s-generation compound semiconductor materials (GaAs, GaP, InP etc.).With front two generation semiconductor material compare, SiC has broad-band gap, high critical breakdown electric field, high heat conductance, high carrier saturation drift velocity and the fabulous characteristics such as chemical stability, at photoelectron and microelectronic, has huge application potential.
At present, be proved to be can the most effective standard method of growing large-size SiC monocrystalline for the PVT method.Typical SiC crystal growing chamber is comprised of seed crystal support and crucible body, and the effect of seed crystal support is to place seed crystal, and the effect of crucible body pot is to place powder.In the growing silicon carbice crystals process, silicon carbide seed is bonded on seed crystal support by tackiness agents such as epoxy resin glue or Phenol aldehyde resins, because the seed crystal support working accuracy is relatively poor, the factors such as binding agent adheres to inhomogeneous and binding agent is exitted after high temperature cabonization cause existing between the seed crystal back side and seed crystal support some pores.The thermal conductivity of the binding agent after pore and high temperature cabonization is different, make the warm field distribution of seed crystal inhomogeneous, in addition due to the existence of pore, in the growing silicon carbice crystals process, warm field gradient does not only form between raw material and seed crystal, has equally thermograde in the crystal of growth and between the crystal back side and seed crystal support.Owing to having thermograde between the crystal back side and seed crystal support, the crystal back side will thermal evaporation, and at first the gas that evaporation produces accumulate in pore.In the growing silicon carbice crystals process, although the three high graphite that crucible adopts are prepared from, it still has more pore, so accumulate in the hole effusion that the gas in pore will exist from seed crystal support.It is a time-continuing process that gas is overflowed, and constantly evaporate at the crystal back side, and the gas of generation is constantly overflowed from the graphite seed holder, causes producing plane hexagonal defective in crystal growing process.This defective has a strong impact on quality and the productive rate of wafer.
Summary of the invention
But technical problem to be solved by this invention is to provide a kind of reduce injection defect, improves the seed crystal fixing means that is used for growing silicon carbice crystals of crystal quality.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of seed crystal fixing means for growing silicon carbice crystals comprises the following steps: at first the reverse side with seeded growth face carries out coating film treatment, obtains the seed crystal after plated film; Then with the aufwuchsplate of the seed crystal after plated film towards sic raw material, utilize the support that seed crystal support is provided with that seed crystal is held up.
The invention has the beneficial effects as follows: the reverse side of seeded growth face is carried out coating film treatment, to ensure that seed crystal the phenomenon that oppositely distils can not occur.Seed crystal support is provided with support, and the seed crystal after plated film is held up, and can effectively suppress the meteorology transmission between seed crystal and seed crystal support, reduce simultaneously the thermal conduction difference between seed crystal and backing material, better discharge the thermal stresses in crystal growing process, thereby reduce injection defect improves crystal quality.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the described material that carries out plated film comprises any one in metal carbide material, polycrystal carborundum or noncrystalline silicon carbide.
Preferably, described metal carbide material comprises tantalum carbide or molybdenum carbide.
Further, the thickness of described plated film is 0.5 μ m～5 μ m.
Further, the support of described seed crystal support is circular seed crystal support support or hook-shaped seed crystal support support.
Further, the quantity of described hook-shaped seed crystal support support is more than or equal to three.
Description of drawings
Fig. 1 is the vertical schematic diagram of seed crystal support of physical vapor method grow silicon carbide crystals;
Fig. 2 is seed crystal support and the seed crystal elevational schematic view of physical vapor method grow silicon carbide crystals, and the support of seed crystal support is circular seed crystal support support;
Fig. 3 is seed crystal support and the seed crystal elevational schematic view of physical vapor method grow silicon carbide crystals, and the support of seed crystal support is hook-shaped seed crystal support support;
In accompanying drawing, the list of parts of each label representative is as follows:
1, heat preservation carbon felt, 2, seed crystal support, 2-1, circular seed crystal support support, 2-2, hook-shaped seed crystal support support, 3, seed crystal, 4, plated film.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example only is used for explaining the present invention, is not be used to limiting scope of the present invention.
A kind of seed crystal fixing means for growing silicon carbice crystals comprises the following steps:
As shown in Figure 1, adopt the silicon carbide seed 3 of thickness＞700 μ m, at the reverse side plating skim of its aufwuchsplate, plated film 4 materials can select the metal carbide material such as tantalum, molybdenum, also can select polycrystalline or noncrystalline silicon carbide, its thickness is generally at 0.5 μ m～5 μ m; Seed crystal after plated film towards raw material, utilizes support 2-1 or the 2-2 of seed crystal support 2 that seed crystal is held up aufwuchsplate, and the material of seed crystal support 2 can be selected tantalum carbide, molybdenum carbide etc., also can select graphite, and carry out the coating film treatment same with seed crystal on graphite; Seed crystal support 2 is connected with crucible by screw thread, and heat preservation carbon felt 1 is placed in above seed crystal 3.
Figure 2 shows that a kind of circular seed crystal support support 2-1 structure, its thickness is at 0.5mm～5mm, and width X is at 0.5mm～5mm;
Be illustrated in figure 3 as hook-shaped seed crystal support support 2-2 structure, its quantity usually 〉=3, thickness is at 0.5mm～5mm, width X is at 0.5mm～5mm.
The above is only preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. a seed crystal fixing means that is used for growing silicon carbice crystals, is characterized in that, comprise the following steps: at first the reverse side with seeded growth face carries out coating film treatment, obtains the seed crystal after plated film; Then with the aufwuchsplate of the seed crystal after plated film towards sic raw material, utilize the support that seed crystal support is provided with that seed crystal is held up.
2. the seed crystal fixing means for growing silicon carbice crystals according to claim 1, it is characterized in that: the described material that carries out plated film comprises any one in metal carbide material, polycrystal carborundum or noncrystalline silicon carbide.
3. the seed crystal fixing means for growing silicon carbice crystals according to claim 2, it is characterized in that: described metal carbide material comprises tantalum carbide or molybdenum carbide.
4. the seed crystal fixing means for growing silicon carbice crystals according to claim 1, it is characterized in that: the thickness of described plated film is 0.5 μ m～5 μ m.
5. the described seed crystal fixing means for growing silicon carbice crystals of according to claim 1 to 4 any one, it is characterized in that: the support of described seed crystal support is circular seed crystal support support or hook-shaped seed crystal support support.
6. the seed crystal fixing means for growing silicon carbice crystals according to claim 5, it is characterized in that: the quantity of described hook-shaped seed crystal support support is more than or equal to three.
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| CN201310025126XA CN103088411A (en) | 2013-01-23 | 2013-01-23 | Seed crystal fixing method for growth of silicon carbide crystals |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233458A (en) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | Graphite seed crystal support for silicon carbide crystal growth |
| CN105463575A (en) * | 2016-01-15 | 2016-04-06 | 北京天科合达半导体股份有限公司 | Seed crystal processing method for growing high-quality silicon carbide crystals |
| CN105780107A (en) * | 2014-12-18 | 2016-07-20 | 中国科学院物理研究所 | Seed crystal processing method for improving growth quality of silicon carbide crystals, and method for growing silicon carbide crystals |
| CN108048911A (en) * | 2017-12-20 | 2018-05-18 | 中国科学院上海硅酸盐研究所 | A kind of method using physical gas phase deposition technology growing large-size carborundum crystals |
| CN109137076A (en) * | 2018-10-17 | 2019-01-04 | 福建北电新材料科技有限公司 | A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide |
| CN111334863A (en) * | 2020-04-13 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Non-bonding seed crystal aluminum nitride crystal growth device and aluminum nitride crystal preparation method |
| CN111411395A (en) * | 2020-05-15 | 2020-07-14 | 南通大学 | Graphite crucible device for silicon carbide crystal growth and single crystal growth method thereof |
| CN113293437A (en) * | 2021-05-07 | 2021-08-24 | 南通大学 | Effective method for growing silicon carbide single crystal on ultrathin substrate |
| CN114395803A (en) * | 2022-01-13 | 2022-04-26 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
| CN119372772A (en) * | 2024-12-26 | 2025-01-28 | 浙江晶越半导体有限公司 | A seed crystal bonding method and a silicon carbide crystal growth method |
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| US20020088391A1 (en) * | 1999-07-07 | 2002-07-11 | Harald Kuhn | Seed crystal holder with lateral mount for an SiC seed crystal |
| US7300519B2 (en) * | 2004-11-17 | 2007-11-27 | Cree, Inc. | Reduction of subsurface damage in the production of bulk SiC crystals |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233458A (en) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | Graphite seed crystal support for silicon carbide crystal growth |
| CN105780107A (en) * | 2014-12-18 | 2016-07-20 | 中国科学院物理研究所 | Seed crystal processing method for improving growth quality of silicon carbide crystals, and method for growing silicon carbide crystals |
| CN105463575A (en) * | 2016-01-15 | 2016-04-06 | 北京天科合达半导体股份有限公司 | Seed crystal processing method for growing high-quality silicon carbide crystals |
| CN105463575B (en) * | 2016-01-15 | 2019-02-19 | 北京天科合达半导体股份有限公司 | A kind of seed crystal processing method for growing silicon carbide crystal with high quality |
| CN108048911A (en) * | 2017-12-20 | 2018-05-18 | 中国科学院上海硅酸盐研究所 | A kind of method using physical gas phase deposition technology growing large-size carborundum crystals |
| CN109137076A (en) * | 2018-10-17 | 2019-01-04 | 福建北电新材料科技有限公司 | A kind of fixed device of seed wafer and its application method of growth single-crystal silicon carbide |
| CN111334863A (en) * | 2020-04-13 | 2020-06-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Non-bonding seed crystal aluminum nitride crystal growth device and aluminum nitride crystal preparation method |
| CN111411395A (en) * | 2020-05-15 | 2020-07-14 | 南通大学 | Graphite crucible device for silicon carbide crystal growth and single crystal growth method thereof |
| CN113293437A (en) * | 2021-05-07 | 2021-08-24 | 南通大学 | Effective method for growing silicon carbide single crystal on ultrathin substrate |
| CN114395803A (en) * | 2022-01-13 | 2022-04-26 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
| CN114395803B (en) * | 2022-01-13 | 2023-08-22 | 浙江大学 | Bonding structure and bonding method for reducing back sublimation of silicon carbide seed crystal |
| CN119372772A (en) * | 2024-12-26 | 2025-01-28 | 浙江晶越半导体有限公司 | A seed crystal bonding method and a silicon carbide crystal growth method |
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Address after: 102206, Changping District, Shahe, Beijing Town, North Village Road, West Bridge, Shahe industrial city Applicant after: Hebei Tongguang Crystal Co., Ltd. Address before: Four building B, building 071051, building six, Science Park, 5699 North Second Ring Road, Hebei, Baoding, Applicant before: Baoding Kerui Crystal Co., Ltd. |
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Application publication date: 20130508 |