CN103078493B - Boosted circuit - Google Patents
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Abstract
The invention discloses a boosted circuit which is composed of four unit circuits including a surge suppression circuit, a linear voltage stabilizing circuit, an oscillator circuit and a voltage doubling rectifying circuit, wherein after power voltage is filtered and reduced by the surge suppression circuit, stable voltage is output by the linear voltage stabilizing circuit; through the oscillator circuit, a square wave or a sine wave of which a peak-to-peak value is close to the output voltage of the linear voltage stabilizing circuit is generated; and after capacitive coupling of the voltage doubling rectifying circuit is performed on the square wave or the sine wave, voltage high than the power voltage is output through voltage doubling rectification and used for driving a power MOS (Metal Oxide Semiconductor) tube. The boosted circuit is characterized in that the output voltage of the linear voltage stabilizing output end of the linear voltage stabilizing circuit is slightly greater than the driving voltage of a grid electrode of the MOS tube, and the working current of the oscillator circuit is lower than 2 mA, so as to implement boosting with no-load power consumption lower than 100 milliwatt and satisfy the energy saving requirement of the new age.
Description
Technical field
The present invention relates to booster circuit, particularly for the low consumption circuit of driving power metal-oxide-semiconductor.
Background technology
Because the application's circuit is used for protective circuit, so first from protective circuit, current-limiting circuit describes.Current-limiting circuit or device have a variety of, American inventor Edison (Thomas Alva Edison, 1847-1931 years) before more than 100 years invention fuse be exactly current limiting device, fuse (fuse) is also referred to as current insurance silk, and it is defined as by IEC127 standard " fuse-link (fuse-link) ".
Table one gives the electrical characteristic of special quick break fuse in prior art, and this characteristic meets CCC, the U.S. UL Valuation Standard of China.
Table one
| Electric current | Fusing time |
| 100% | Minimum 4 hours |
| 200% | Maximum 1S |
| 275% | Maximum 300mS |
| 400% | Maximum 30mS |
| 1000% | Maximum 4mS |
The characteristic of prior art fuse can be seen from table one, when electric current is rated current 200%, fusing time allows to reach 1 second, actual measurement is all at more than 300mS, namely more than 0.3 second, and once fusing, even if follow-up short circuit or over current fault are got rid of, circuit re-powers, and also will change fuse could normal work.
It is long to there is fusing time in prior art fuse, the shortcoming can not recovered voluntarily after fusing.
The resettable fuse occurred afterwards is a kind of overcurrent Electronic Protection components and parts, adopts macromolecule organic polymer at high pressure, high temperature, under the condition of vulcanization reaction, after doping particulate materials, forms through special processes.Also resettable fuse is traditionally PPTC (Polyer Positive Temperature Coefficent).Stricti jurise is said: PPTC is not resettable fuse, and Resettable Fuse is only resettable fuse.
Resettable fuse by through special processing polymer resin (Polymer) and be distributed in the inside conducting particles (Carbon Black) form.Conducting particles is closely strapped in outside crystalloid structure by polymer resin under normal operation, form chain conductive path, resettable fuse is now low resistive state, and the heat energy that electric current circuit flowing through resettable fuse produces is little, can not change crystal structure.When circuit be short-circuited or over current fault time, flow through resettable fuse big current produce heat polymer resin is melted, volume increases rapidly, formation high-impedance state, operating current reduces rapidly, thus limits circuit and protect.When after failture evacuation, resettable fuse is crystallisation by cooling again, volume contraction, and conducting particles forms conductive path again, and resettable fuse reverts to low resistive state, thus completes the protection to circuit, need not manually change.
PPTC is high molecular polymer positive coefficient temperature element (TE, and be commonly called as semistor, protection effect is poor.When circuit is short-circuited or transship, the heat that the big current flowing through resettable fuse produces makes resistance value raise, thus the voltage of PPTC undertaken is also raised, and device meeting Automatic-searching, to a current-limiting points, guarantees that its heating maintains its high-impedance state.
Just because of this, resettable fuse all utilizes temperature to raise work, and the rising of temperature needs the time; this also determines resettable fuse and reacts slow when overcurrent; after playing protection, still there is larger maintenance electric current, its role guarantees not cause fire.
Especially in low pressure (being less than 60V) DC circuit; inevitably there is jumbo filter capacitor in a lot of feeder ear; resettable fuse is difficult to obtain good protective effect; resettable fuse is often misapplied by Electronics Engineer and burns subsequent conditioning circuit; voltage adaptation is poor, for different operating voltages, often will recalculate caloric value and sustainable Minimal Protective electric current; reselect resettable fuse, in use very inconvenient.The classical blown fuse time is long, and it is irrecoverable to break, and just occurs electrical type fuse afterwards.
China's publication number is the patent " a kind of electronic fuse " of CN1110836A, application number is 201210408514 " a kind of current-limiting circuit " is all a kind of fireballing protective circuit, adopts transistor as electronic switch, effectively solves the problem.And be easy to more additional circuit, realize Anti-surging function.
Along with the development of industrial electronic technology; require more and more stricter to the insertion loss of protective circuit; therefore adopt metal-oxide-semiconductor to be popularized as the circuit of electronic switch; metal-oxide-semiconductor belongs to voltage-controlled device; control section power consumption is minimum; after conducting, internal resistance is extremely low, and the MOS being low to moderate a few milliohm is at present also very common, and Fig. 1 shows the symbol of metal-oxide-semiconductor in schematic diagram of N raceway groove.Have three electrodes, grid G, source S, drain D, when the voltage applied between grid and source electrode is greater than the door capable of being opened voltage limit of metal-oxide-semiconductor, door capable of being opened voltage limit makes cut-in voltage again, the drain electrode of metal-oxide-semiconductor and source conduction.Fig. 2 shows the inside equivalent electric circuit of metal-oxide-semiconductor, and in source S, between drain D, also there is a parasitic diode Da, part metal-oxide-semiconductor also exists the voltage stabilizing didoe Db between a grid G to source S, to prevent the grid G of MOS breakdown.
Just because of the existence of parasitic diode in metal-oxide-semiconductor, in a lot of occasion, its connection in circuit and drive and just seem very careful.Fig. 3 shows a kind of basic topology of metal-oxide-semiconductor application of N raceway groove, just because of the parasitic diode of metal-oxide-semiconductor T0 inside exists, its source S just need connect output, namely the Vout in Fig. 3, if the source S of metal-oxide-semiconductor T0, drain D has been exchanged and has been applied in circuit, and the parasitic diode of its inside is just in conducting state, and metal-oxide-semiconductor T0 cannot turn off because of the forward conduction of parasitic diode.When normal use, for the consideration of efficiency, General Requirements Vout voltage is as much as possible close to input voltage vin, therefore Vout ≈ Vin, so the voltage of the grid G of metal-oxide-semiconductor T1 is just higher than Vin, conducting internal resistance in order to ensure metal-oxide-semiconductor T1 is minimum, and the voltage of the grid G of driven MOS pipe T1 is higher than more than the cut-in voltage of a Vin metal-oxide-semiconductor T1, generally about 5V to 15V.As U.S. Patent number US6,985,341 and US7, the invention of 233,469 is exactly this application.
Namely the operating voltage of the circuit of the grid G of control or driven MOS pipe T1, is higher than Vin input voltage 5V to 15V, generally, with accessory power supply to this circuit supply, hereinafter referred to as boost voltage.The way that industry is commonly used is powered to a time-base integrated circuit NE555 with voltage stabilizing circuit, and time-base integrated circuit NE555 produces vibration, then carries out voltage multiplying rectifier to its vibration output, thus produce the boost voltage of control or driven MOS pipe T1.
As a protective circuit; operating voltage is 36V to 72V; use above-mentioned NE555 to boost, because the operating current of time-base integrated circuit NE555 is about 7.5mA, the extra power consumption brought is 0.27W to 0.54W; this is pursuing the today of " unloaded low-power consumption " day by day; can not be accepted by client, as a lot of Switching Power Supplies of Alternating Current Power Supply, be required that the no-load power consumption of Switching Power Supply is less than 0.4W; for the equipment of low-voltage DC supply, a lot of customer requirement no-load power consumption is less than 0.2W.The enterprise of the state-owned electronic industry of part claims, requires that no-load power consumption is less than 0.1W, i.e. 100mW.
Up to the present, also there is not low cost both at home and abroad, low-loss booster circuit carrys out driven MOS pipe.
Summary of the invention
In view of this, the present invention overcomes above-mentioned deficiency, provides a kind of booster circuit: realize boosting, driving power metal-oxide-semiconductor with the no-load power consumption lower than 100 milliwatts.
The object of the invention is to be achieved through the following technical solutions: a kind of booster circuit, comprises surge restraint circuit, linear voltage-stabilizing circuit, pierce circuit, voltage doubling rectifing circuit; Surge restraint circuit comprises three ports, Surge suppression input, Surge suppression output, Surge suppression earth terminal; Linear voltage-stabilizing circuit comprises three ports, linear voltage stabilization input, linear voltage stabilization output, linear voltage stabilization earth terminal; Pierce circuit comprises three ports, oscillator input, oscillator output end, oscillator earth terminal; Voltage doubling rectifing circuit comprises three ports, and voltage multiplying rectifier input, voltage multiplying rectifier output, voltage multiplying rectifier are held floatingly; Its annexation is as follows: Surge suppression input is that the power supply of circuit of the present invention inputs positive port, and power supply input negative terminal mouth is ground wire, and ground wire is connected with Surge suppression earth terminal, linear voltage stabilization earth terminal, oscillator earth terminal; Surge suppression output connecting linear voltage stabilizing input, linear voltage stabilization output connection oscillator input, oscillator output end connects voltage multiplying rectifier input, and voltage multiplying rectifier holds connection power supply to input positive port floatingly, and voltage multiplying rectifier output exports the output voltage of circuit of the present invention; Voltage doubling rectifing circuit comprises the 7th resistance, the second diode, the 3rd diode, the 5th electric capacity; Its annexation is: the 7th resistance and the 5th capacitances in series, the one end of two terminals formed after series connection is voltage multiplying rectifier input, the other end of two terminals formed after series connection connects the negative electrode of the second diode, connect the anode of the 3rd diode simultaneously, the anode of the second diode is that voltage multiplying rectifier is held floatingly, and the negative electrode of the 3rd diode is voltage multiplying rectifier output; It is characterized by: the output voltage of the linear voltage stabilization output of linear voltage-stabilizing circuit is slightly larger than the gate drive voltage of metal-oxide-semiconductor; The operating current of pierce circuit is at below 2mA.
Be below the first concrete scheme:
Surge restraint circuit comprises the first resistance, the first electric capacity; One end of first resistance is Surge suppression input, and the other end connects the first electric capacity, and tie point is Surge suppression output, and the other end of the first electric capacity is Surge suppression earth terminal;
Linear voltage-stabilizing circuit comprises the second resistance, the first N-type triode, the first voltage stabilizing didoe, the second electric capacity; The current collection very linear voltage stabilization input of the first N-type triode, one end of second resistance connects the collector electrode of the first N-type triode, the other end of the second resistance connects the negative electrode of the first voltage stabilizing didoe, tie point connects the base stage of the first N-type triode, the anode of the first voltage stabilizing didoe is linear voltage stabilization earth terminal, linear voltage stabilization earth terminal connects one end of the second electric capacity simultaneously, and the other end of the second electric capacity connects the emitter of the first N-type triode, and tie point is linear voltage stabilization output;
Pierce circuit is a two-tube multivibrator, comprises the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the second N-type triode, the 3rd N-type triode, the 3rd electric capacity, the 4th electric capacity; Its annexation is: the emitter of the second N-type triode, the 3rd N-type triode is connected, and tie point forms oscillator earth terminal; One end of 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance is connected, and tie point forms oscillator input; The other end of the 3rd resistance connects the collector electrode of the second N-type triode, the other end of the 4th resistance connects the base stage of the second N-type triode, the other end of the 5th resistance connects the base stage of the 3rd N-type triode, and the other end of the 6th resistance connects the collector electrode of the 3rd N-type triode; The collector electrode of the second N-type triode also connects one end of the 3rd electric capacity, and the other end of the 3rd electric capacity connects the base stage of the 3rd N-type triode; The collector electrode of the 3rd N-type triode also connects one end of the 4th electric capacity, and the other end of the 4th electric capacity connects the base stage of the second N-type triode; Wherein, the current collection very oscillator output end of the 3rd N-type triode;
The present invention also provides a kind of scheme be equal to technique scheme, is below the concrete scheme of the second:
Surge restraint circuit, linear voltage-stabilizing circuit, voltage doubling rectifing circuit are identical with the first concrete scheme, difference is pierce circuit is single tube sinusoidal oscillator, comprise the 5th resistance, the 6th resistance, 8th resistance, the 9th resistance, the 3rd N-type triode, the 6th electric capacity, the 7th electric capacity, the 8th electric capacity; Its annexation is: the emitter of the 3rd N-type triode is connected with one end of the 8th resistance, the 9th resistance, and tie point forms oscillator earth terminal; One end of 5th resistance, the 6th resistance is connected, and tie point forms oscillator input; The other end of the 5th resistance connects the base stage of the 3rd N-type triode, and the other end of the 6th resistance connects the collector electrode of the 3rd N-type triode; The current collection very oscillator output end of the 3rd N-type triode; The collector electrode of the 3rd N-type triode connects one end of the 6th electric capacity, the other end of the 6th electric capacity is connected with the 7th electric capacity, the other end of the 7th electric capacity is connected with the 8th electric capacity, the other end of the 8th electric capacity is connected with the base stage of the 3rd N-type triode, 6th electric capacity is connected the other end of the 8th resistance with the tie point of the 7th electric capacity, and the 7th electric capacity is connected the other end of the 9th resistance with the tie point of the 8th electric capacity.
As the further improvement of such scheme, one end of the second resistance in linear voltage-stabilizing circuit connects Surge suppression input, the other end of the second resistance still connects the negative electrode of the first voltage stabilizing didoe, because one end of the second resistance connects Surge suppression input, when operating voltage is lower, first voltage-stabiliser tube can obtain relatively large operating current, is still in voltage stabilizing state, makes the voltage adaptation scope of booster circuit of the present invention wider.
As the further improvement of such scheme, voltage doubling rectifing circuit is that the voltage doubling rectifing circuit of more than three multiplication of voltages is formed.
Operation principle of the present invention illustrates:
Fig. 4 is the functional block diagram of a kind of booster circuit of the present invention, draws according to technical scheme form completely, comprise surge restraint circuit 20, linear voltage-stabilizing circuit 30, pierce circuit 40, voltage doubling rectifing circuit 50.The effect of surge restraint circuit 20 suppresses the surge voltage in power supply Vin, prevent from damaging other circuit of the present invention, supply voltage Vin is after surge restraint circuit 20 filtering, step-down, a comparatively stable voltage is exported by linear voltage-stabilizing circuit 30, the operating frequency of pierce circuit 40 follow-up is like this relatively stable, pierce circuit 40 produces a square wave or sine wave, its peak-to-peak value is close to linear voltage-stabilizing circuit output voltage, this square wave or sine wave, after capacitive coupling in voltage doubling rectifing circuit 50, export the voltage higher than supply voltage through voltage multiplying rectifier.
Because grid to the source electrode of metal-oxide-semiconductor all exists an electric capacity, be input capacitance, be generally denoted as C
iss, this electric capacity is enough to the output voltage of circuit of the present invention to be filtered into good direct voltage.
The operation principle of the above-mentioned concrete technical scheme of the present invention is similar to above-mentioned principle, in an embodiment can the operation principle of labor technical scheme.
By technique scheme, circuit of the present invention obtains the voltage higher than power input voltage, and operating current is minimum, in the embodiment of the application, the circuit of wastage in bulk or weight electric current ability 0.25mA can be shown, even if the direct voltage of input 400V, the power consumption just 100mW of circuit of the present invention.Compared with prior art, the present invention has following significant effect:
1, low in energy consumption: power consumption lower than 100mW, can meet the New Times to energy-conservation requirement.
2, cost is low: from above-mentioned connection relationship, and device used is all comparatively common, and cost is low.
3, be easy to integrated: due to low in energy consumption, do not use inductance component, so can be integrated in a slice IC, add a small amount of peripheral components, complete and can realize Highgrade integration, easy to use.
Accompanying drawing explanation
Fig. 1 is the symbol of metal-oxide-semiconductor in schematic diagram of N raceway groove;
Fig. 2 is the inside equivalent electric circuit of the metal-oxide-semiconductor of N raceway groove;
Fig. 3 be N-channel MOS pipe because of parasitic diode, its source S need connect and exports positive basic topology;
Fig. 4 is the functional block diagram of a kind of booster circuit of the present invention;
Fig. 5 is the schematic diagram of first embodiment of the invention;
To the schematic diagram that electric capacity C5 charges when Fig. 6 is triode T3 saturation conduction in the first embodiment;
Fig. 7 is the principle schematic producing boosting, rectification when triode T3 ends in the first embodiment;
Fig. 8 is the schematic diagram of second embodiment of the invention;
Fig. 9 is the schematic diagram of third embodiment of the invention;
Figure 10 is the schematic diagram of the another kind of execution mode of third embodiment of the invention;
Figure 11 is the schematic diagram of fourth embodiment of the invention;
Figure 12 is the voltage doubling rectifing circuit of three multiplication of voltages.
Embodiment
first embodiment
Fig. 4 is the functional block diagram of a kind of booster circuit of the present invention, and draw according to technical scheme form completely, Fig. 5 is the schematic diagram of first embodiment of the invention, and its annexation observes the annexation in technical scheme completely, specific as follows:
A kind of booster circuit, see Fig. 5, comprises surge restraint circuit 20, is surge restraint circuit in dotted line frame 20, linear voltage-stabilizing circuit 30, pierce circuit 40, voltage doubling rectifing circuit 50; Surge restraint circuit 20 comprises three ports, Surge suppression input 21, Surge suppression output 23, Surge suppression earth terminal 22; Linear voltage-stabilizing circuit 30 comprises three ports, linear voltage stabilization input 31, linear voltage stabilization output 33, linear voltage stabilization earth terminal 32; Pierce circuit 40 comprises three ports, oscillator input 41, oscillator output end 43, oscillator earth terminal 42; Voltage doubling rectifing circuit 50 comprises three ports, and voltage multiplying rectifier input 51, voltage multiplying rectifier output 53, voltage multiplying rectifier hold 52 floatingly; Its annexation is as follows: Surge suppression input 21 is that the power supply of circuit of the present invention inputs positive port Vin, and power supply input negative terminal mouth is ground wire GND, and ground wire GND is connected with Surge suppression earth terminal 22, linear voltage stabilization earth terminal 32, oscillator earth terminal 42; Surge suppression output 23 connecting linear voltage stabilizing input 31, linear voltage stabilization output 33 connection oscillator input 41, oscillator output end 43 connects voltage multiplying rectifier input 51, voltage multiplying rectifier holds 52 connection power supplys to input positive port Vin floatingly, and voltage multiplying rectifier output 53 exports the output voltage of circuit of the present invention.
Be below the scheme that the first embodiment is concrete:
As shown in Figure 5, surge restraint circuit 20 comprises the first resistance R1, the first electric capacity C1; One end of first resistance R1 is Surge suppression input 21, and the other end connects the first electric capacity C1, and tie point is the other end of Surge suppression output 23, first electric capacity C1 is Surge suppression earth terminal 22;
Linear voltage-stabilizing circuit 30 comprises the second resistance R2, the first N-type triode T1, the first voltage stabilizing didoe D1, the second electric capacity C2; The current collection very linear voltage stabilization input 31 of the first N-type triode T1, one end of second resistance R2 connects the collector electrode of the first N-type triode T1, the other end of the second resistance R2 connects the negative electrode of the first voltage stabilizing didoe D1, tie point connects the base stage of the first N-type triode T1, the anode of the first voltage stabilizing didoe D1 is linear voltage stabilization earth terminal 32, linear voltage stabilization earth terminal 32 connects one end of the second electric capacity C2 simultaneously, the other end of the second electric capacity C2 connects the emitter of the first N-type triode T1, and tie point is linear voltage stabilization output 33;
Pierce circuit 40 is a two-tube multivibrator, comprises the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the second N-type triode T2, the 3rd N-type triode T3, the 3rd electric capacity C3, the 4th electric capacity C4; Its annexation is: the emitter of the second N-type triode T2, the 3rd N-type triode T3 is connected, and tie point forms oscillator earth terminal 42; One end of 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6 is connected, and tie point forms oscillator input 41; The other end of the 3rd resistance R3 connects the collector electrode of the second N-type triode T2, the other end of the 4th resistance R4 connects the base stage of the second N-type triode T2, the other end of the 5th resistance R5 connects the base stage of the 3rd N-type triode T3, and the other end of the 6th resistance R6 connects the collector electrode of the 3rd N-type triode T3; The collector electrode of the second N-type triode T2 also connects one end of the 3rd electric capacity C3, and the other end of the 3rd electric capacity C3 connects the base stage of the 3rd N-type triode T3; The collector electrode of the 3rd N-type triode T3 also connects one end of the 4th electric capacity C4, and the other end of the 4th electric capacity C4 connects the base stage of the second N-type triode T2; Wherein, the current collection very oscillator output end 43 of the 3rd N-type triode T3;
As shown in Figure 5, voltage doubling rectifing circuit 50 comprises the 7th resistance R7, the second diode D2, the 3rd diode D3, the 5th electric capacity C5; Its annexation is: the 7th resistance R7 and the 5th electric capacity C5 connects, the one end of two terminals formed after series connection is voltage multiplying rectifier input 51, the other end of two terminals formed after series connection connects the negative electrode of the second diode D2, connect the anode of the 3rd diode D3 simultaneously, the anode of the second diode D2 is that voltage multiplying rectifier holds 52 floatingly, and the negative electrode of the 3rd diode is voltage multiplying rectifier output 53.
Be below the first embodiment operation principle:
Purposes of the present invention is exactly the accessory power supply in protective circuit, therefore be provided with one-level surge restraint circuit 20, to guarantee that linear voltage-stabilizing circuit 30 is not damaged, because the operating current of follow-up pierce circuit 40 is at below 2mA, why select the current limit of 2mA, because in industrial circle, the voltage of DC bus mostly is 48V, the power consumption constraints of 100mW requires that operating current is less than 100mW/48V=2.083mA, consider that linear voltage-stabilizing circuit 30 also can consume some electric currents, so require that the operating current of pierce circuit 40 is at below 2mA, just can guarantee that total power consumption of the present invention is at below 100mW.
The quiescent current needs of linear voltage-stabilizing circuit 30 is less than 100uA, and namely during no-output, the power consumption of resistance R2 is at below 100uA.The input of linear voltage-stabilizing circuit 30, output current are also at below 2mA, therefore the first resistance R1 value in surge restraint circuit 20 can be larger, the filter circuit that first resistance R1 and the first electric capacity C1 forms can also suppress surge effectively, and this utilizes the terminal voltage of electric capacity not suddenly change to realize.Just because of the Main Function of this circuit of surge restraint circuit 20 suppresses surge, so be called surge restraint circuit.
Filtered direct voltage is added on the linear voltage stabilization input 31 of linear voltage-stabilizing circuit 30 through Surge suppression output 23, this level power supply have employed very simple voltage stabilizing circuit, to realize extremely low oneself power consumption, because its maximum output current only needs about 2mA, use single tube voltage stabilizing circuit, electric current is provided to be only the multiplication factor of output current 2mA divided by the first N-type triode T1 to the first N-type triode T1 base stage, at present, the multiplication factor of N-type silicon triode can easily accomplish more than 100 times, as 2N5551, withstand voltage 160V, multiplication factor is between 150 to 300 times.So, first N-type triode T1 base current maximum is: 2mA/100=20uA, circuit of the present invention is under minimum operating voltage, ensure that the electric current flowing through the first voltage stabilizing didoe D1 is non-vanishing, as being 5uA, at this moment the voltage stabilizing value of the first voltage stabilizing didoe D1 is lower than nominal value, so, circuit of the present invention is under whole operating voltage range, can guarantee that the first voltage stabilizing didoe D1 has the overcurrent being greater than 5uA, it is interval that first voltage stabilizing didoe D1 is operated in linearly bad voltage stabilizing, but subsequent conditioning circuit is less demanding to the precision of voltage regulation, linear voltage-stabilizing circuit 30 can with competent.Even if input voltage range is wider 1:4, at maximum operating voltage, flow through the limiting value of the electric current of the second resistance for (20uA+5uA) × 4=100uA, this ensures the low-power consumption of linear voltage-stabilizing circuit 30.When designing; the output voltage of the linear voltage stabilization output 33 of linear voltage-stabilizing circuit is slightly larger than the gate drive voltage of metal-oxide-semiconductor; as 10V to 20V is better; this is due to common metal-oxide-semiconductor; expect good low conducting internal resistance, its gate drive voltage of General Requirements, at more than 10V, surpasses after reaching 20V; the antistatic protection diode Db meeting conducting of metal-oxide-semiconductor inside, also easily damages metal-oxide-semiconductor.The linear voltage-stabilizing circuit of 10V exports the driving voltage that just can obtain a little less than 10V through pierce circuit 40, voltage doubling rectifing circuit 50, and this causes because diode D3 exists pressure drop, is enough to competent most metal-oxide-semiconductor driving; The linear voltage-stabilizing circuit of 20V exports the driving voltage that just can obtain a little less than 20V through pierce circuit 40, voltage doubling rectifing circuit 50, is enough to the metal-oxide-semiconductor of competent partial high pressure driving.
Linear voltage-stabilizing circuit exports comparatively galvanic current pressure, after the second electric capacity C2 filtering, use to the oscillator input 41 of pierce circuit 40 from linear voltage stabilization output 33, pierce circuit 40 is two-tube multivibrator in a first embodiment, this is known technology, a lot of textbook there is its principles illustrated, no longer describe in detail here.Due to triode T2, T3 conducting in turn, notice that its collector load resistor is enough large in use, namely the resistance of the 3rd resistance R3, the 6th resistance R6 is enough large, to guarantee that the current sinking of pierce circuit 40 is at below 2mA, certainly, after the resistance of collector resistance is enough large, the load capacity of triode T2, T3 also can be very weak, due to finally driven be the grid of metal-oxide-semiconductor, its input impedance is very big, general all at more than 100M Ω, therefore, there is not any problem.
As shown in Figure 5, when in pierce circuit 40 during triode T3 saturation conduction, power supply inputs positive port Vin and has an electric current and hold 52 with floating, through the anode of the second diode D2, the negative electrode of the second diode D2 through voltage multiplying rectifier, through the series connection two-terminal network of the 7th resistance R7 and the 5th electric capacity C5, arrive the collector electrode of the 3rd N-type triode T3, again through the emitting stage of the 3rd N-type triode T3 to ground wire GND, i.e. power supply input negative terminal mouth.Fig. 6 shows the path of this electric current.3rd N-type triode T3 is hereinafter referred to as triode T3, during saturation conduction, because pressure drop is less, direct in the drawings with wire connection, to facilitate understanding.This electric current diminishes gradually, until be zero, this electric current can be charged to the terminal voltage of the 5th electric capacity C5 the voltage that power supply inputs positive port Vin to negative terminal mouth GND, i.e. supply voltage, this value is designated as U1, equal the operating voltage of circuit of the present invention, in Fig. 6, designate the voltage U 1 after the 5th electric capacity C5 charging and polarity.
When triode T3 in pierce circuit 40 ends, as shown in Figure 7, when triode T3 ends, be equivalent to open circuit, be drawn as dotted line in Fig. 7 to show that triode T3 ends, near the terminal 44 of the collector electrode of the 3rd N-type triode T3 in the 5th electric capacity C5, being ground connection in figure 6, is no-voltage.In the figure 7, because triode T3 ends, terminal 44 is raised to the voltage of oscillator input 41 through the 6th resistance R6, known in conjunction with annexation, this voltage equals the output voltage of linear voltage-stabilizing circuit 30, be denoted as U2, because electric capacity both end voltage can not be suddenlyd change, near the terminal 45 of the negative electrode of the second diode in 5th electric capacity C5, its voltage is just raised to voltage U 1 and adds linear voltage-stabilizing circuit output voltage U2, namely in the figure 7, the voltage to earth U3=U1+U2 of 45 ends, voltage U 3 is through the anode of the 3rd diode D3, the negative electrode rectification of the 3rd diode D3, the negative electrode of the 3rd diode D3 is exactly voltage multiplying rectifier output 53, when load open circuit, its output voltage is exactly the output voltage of circuit of the present invention.
In fact, because resistance R6 and resistance R7 resistance are comparatively large, obtain stable output voltage completely, often need multiple cycle, because operating frequency is higher, all within 1mA, circuit exports satisfactory driving voltage, does not have an impact to use.
Because grid to the source electrode of metal-oxide-semiconductor all exists an electric capacity, be input capacitance, be generally denoted as C
iss, and input impedance is up to 100M Ω, input capacitance is enough to the output voltage of circuit of the present invention to be filtered into good direct voltage.Certainly, also artificially filter capacitor can be connected over the ground or to input voltage vin at the negative electrode of the 3rd diode D3, as the electric capacity Ca in Fig. 7.
Therefore, the output voltage of the linear voltage stabilization output 33 of linear voltage-stabilizing circuit 30 is slightly larger than the gate drive voltage of metal-oxide-semiconductor, and this loss of voltage is because the pressure drop of diode D3 and resistance R6, resistance R7 cause.After the gate drive voltage of metal-oxide-semiconductor, the driving that guarantee is good.
From above-mentioned operation principle, the present invention can realize the object of boosting.With one group of real data, the first embodiment is described below.
As shown in Figure 5, it is 24V to 48V that a kind of booster circuit is designed to input direct voltage, and power consumption is less than 100mW, and output voltage is all the time higher than input voltage 10V; The design parameter of Fig. 5 circuit is as follows:
Resistance R1 is 4.3K Ω, and resistance R2 is 220K Ω, and resistance R3, R6 are 6.2K Ω, and resistance R4, R5 are 220K Ω, and resistance R7 is 2.2K Ω; Electric capacity C1 is the patch capacitor of 1uF/50V, and electric capacity C2 is the patch capacitor of 0.1uF/16V, and electric capacity C3, C4 are the patch capacitor of 680pF, and electric capacity C5 is the patch capacitor of 6800pF/100V; First voltage stabilizing didoe D1 is 1N6004, and nominal voltage stabilizing value is 15V, and the second diode D2, the 3rd diode D3 are 1N4148; First triode is 2N5551 to the 3rd triode, and the actual measurement of its multiplication factor is about 200.
After circuit welds, the operating frequency of actual measurement pierce circuit 40 is 9.82KHz, operating frequency is selected in low-frequency range, because frequency is low, be not easy to occur the problem such as electromagnetic radiation, conduction interference, actual measurement is at 24V to 48V operation interval, the output voltage of linear voltage stabilization output 33 is between 10.4V to 11.5V, this is due under the first voltage stabilizing didoe D1 is operated in small area analysis, its voltage stabilizing value causes lower than nominal value, and first embodiment of the invention connects filter capacitor 1000pF and resistance 1M Ω as after load, actual measurement output voltage:
(1) under 24V direct-current working volts, output voltage is than operating voltage height 10.1V;
(2) under 48V direct-current working volts, output voltage is than operating voltage height 11.2V;
Under the operating voltage range of 24V to 48V, the power consumption of whole circuit is: 1.803mA to 1.996mA, and so power consumption is 43.3mW to 96mW, realizes object of the present invention completely.
second embodiment
Fig. 4 is the functional block diagram of a kind of booster circuit of the present invention, complete drafting according to technical scheme forms, Fig. 8 is the schematic diagram of second embodiment of the invention, its annexation observes the annexation in technical scheme completely, see Fig. 8, comprise surge restraint circuit 20, in dotted line frame 20, be surge restraint circuit, linear voltage-stabilizing circuit 30, pierce circuit 40, voltage doubling rectifing circuit 50; The annexation of these four element circuits is identical with embodiment one.
Surge restraint circuit 20, linear voltage-stabilizing circuit 30, voltage doubling rectifing circuit 50 are identical with the first concrete scheme, difference is pierce circuit 40 is single tube sinusoidal oscillator, comprise the 5th resistance R5, the 6th resistance R6,8th resistance R8, the 9th resistance R9, the 3rd N-type triode T3, the 6th electric capacity C6, the 7th electric capacity C7, the 8th electric capacity C8; Its annexation is: the emitter of the 3rd N-type triode T3 is connected with one end of the 8th resistance R8, the 9th resistance R9, and tie point forms oscillator earth terminal 42; One end of 5th resistance R5, the 6th resistance R6 is connected, and tie point forms oscillator input 41; The other end of the 5th resistance R5 connects the base stage of the 3rd N-type triode T3, and the other end of the 6th resistance R6 connects the collector electrode of the 3rd N-type triode T3; The current collection very oscillator output end 43 of the 3rd N-type triode T3; The collector electrode of the 3rd N-type triode T3 connects one end of the 6th electric capacity C6, the other end of the 6th electric capacity C6 is connected with the 7th electric capacity C7, the other end of the 7th electric capacity C7 is connected with the 8th electric capacity C8, the other end of the 8th electric capacity C8 is connected with the base stage of the 3rd N-type triode T3,6th electric capacity C6 is connected the other end of the 8th resistance R8 with the tie point of the 7th electric capacity C7, and the 7th electric capacity C7 is connected the other end of the 9th resistance with the tie point of the 8th electric capacity C8.
In common application, it is that electric capacity C6 is identical with electric capacity C8 value with electric capacity C7 that its value is closed, and resistance R8 is identical with resistance R9 value, and certainly, value is different, also can vibrate, and just frequency computation part is inconvenient.
In a second embodiment, triode T3 waveform is sinusoidal wave, and the collector voltage of triode T3 is when sinusoidal wave top, and triode T3 is in cut-off state substantially; And when the collector voltage of triode T3 is in sinusoidal wave the lowest point, triode T3 is in saturation condition substantially; So rectification obtains the operation principle of this part of boosting, substantially identical with the first embodiment, repeats no more here.
With one group of real data, the second embodiment is described below.
As shown in Figure 8, it is 36V to 72V that a kind of booster circuit is designed to input direct voltage, and power consumption is less than 100mW, and output voltage is all the time higher than input voltage 10V; The design parameter of Fig. 8 circuit is as follows:
Resistance R1 is 10K Ω, resistance R2 is 1M Ω, resistance R5 is 2M Ω, resistance R6, resistance R7, resistance R8, resistance R9 are 5.1K Ω, electric capacity C1 is the patch capacitor of 0.068uF/100V, electric capacity C2 is the patch capacitor of 0.1uF/16V, and electric capacity C6, C7, C8 are the patch capacitor of 1000pF, and electric capacity C5 is the patch capacitor of 0.01uF/100V; First voltage stabilizing didoe D1 is 1N6006, and nominal voltage stabilizing value is 18V, and the second diode D2, the 3rd diode D3 are 1N4148; First triode T1 is 2N5551, and the actual measurement of its multiplication factor is about 200, and the 3rd triode T3 is S8050, and the actual measurement of its multiplication factor is about 250.
After circuit welds, the operating frequency of actual measurement pierce circuit 40 is 6.92KHz, and operating frequency is selected in low-frequency range, is because frequency is low, is not easy to occur the problem such as electromagnetic radiation, conduction interference.Under 72V direct-current working volts, in Fig. 8, the output voltage of linear voltage-stabilizing circuit 30 is 14.3V, and the sinusoidal wave peak value of collector electrode of actual measurement the 3rd triode T3 is 13.61V, and the lowest point voltage is 0.52V, and sinusoidal wave peak-to-peak value is 13.09V.Actual measurement is at 36V to 72V operation interval, the output voltage of linear voltage stabilization output 33 is between 13.1V to 14.3V, this is due under the first voltage stabilizing didoe D1 is operated in small area analysis, its voltage stabilizing value causes lower than nominal value 18V, and second embodiment of the invention connects filter capacitor 1000pF and resistance 1M Ω as after load, actual measurement output voltage:
(1) under 36V direct-current working volts, output voltage is than operating voltage height 11.8V;
(2) under 72V direct-current working volts, output voltage is than operating voltage height 12.1V;
Under the operating voltage range of 36V to 72V, the power consumption of whole circuit is: 1.267mA to 1.413mA, and so power consumption is 45.6mW to 101.7mW, and 101.7mW exceedes target 100mW, in 5% range of tolerable variance allowed, realizes object of the present invention completely.
In fact, pierce circuit 40 is changed to low consumed power operational amplifier, if static working current is at below 2mA, is connected into Wien-bridge oscillator, equally realizes goal of the invention.
3rd embodiment
Fig. 9 is the schematic diagram of third embodiment of the invention, its annexation observes the annexation in technical scheme completely, see Fig. 9, comprises surge restraint circuit 20, surge restraint circuit is, linear voltage-stabilizing circuit 30, pierce circuit 40, voltage doubling rectifing circuit 50 in dotted line frame 20; The annexation of these four element circuits and embodiment one, embodiment two are identical.
Surge restraint circuit 20, linear voltage-stabilizing circuit 30, voltage doubling rectifing circuit 50 are identical with the first concrete scheme, difference is pierce circuit 40 is CMOS integrated circuit, comprise the tenth resistance R10,9th electric capacity C9, with the first integrated circuit (IC) 1, comprise two not gate A and B, 14 pin of integrated circuit (IC) 1 are feeder ear V
dD, the 7th pin is earth terminal Vss.Its annexation is: the feeder ear V of the first integrated circuit (IC) 1
dDfor oscillator input 41; The earth terminal Vss of the first integrated circuit (IC) 1 is oscillator earth terminal 42; The input of not gate A connects one end of the tenth resistance R10, connect one end of the 9th electric capacity C9 simultaneously, the output of not gate A is connected with the other end of the tenth resistance R10, connect the input of not gate B simultaneously, the output of not gate B is connected with the other end of the 9th electric capacity C9, and tie point is oscillator output end 43.
In the third embodiment; oscillator output end 43 output waveform is square wave; the maximum operating voltage of CMOS integrated circuit is 18V, be generally operational in about 15V to 3V, and quiescent current is minimum; at normal temperatures less than 1uA; and at high temperature, less than 30uA, and load capacity has about 0.5mA; be used in circuit of the present invention, be enough to the grid of metal-oxide-semiconductor in competent Drive Protecting Circuit.Rectification obtains the operation principle of this part of boosting, substantially identical with the first embodiment, repeats no more here.
With one group of real data, the 3rd embodiment is described below.
As shown in Figure 9, it is 48V to 200V that a kind of booster circuit is designed to input direct voltage, and power consumption is less than 100mW, and output voltage is all the time higher than input voltage 10V; The design parameter of Fig. 9 circuit is as follows:
Resistance R1 is 75K Ω, and resistance R2 is 3.9M Ω, and resistance R7 is 10K Ω, and resistance R10 is 1M Ω; Electric capacity C1 is the patch capacitor of 0.022uF/250V, and electric capacity C2 is the patch capacitor of 0.1uF/25V, and electric capacity C9 is the patch capacitor of 100pF, and electric capacity C5 is the patch capacitor of 0.01uF/250V; First voltage stabilizing didoe D1 is 1N4745, and nominal voltage stabilizing value is 16V, and the second diode D2, the 3rd diode D3 are 1N4148; First triode T1 is A42, and the actual measurement of its multiplication factor is about 80; First integrated circuit (IC) 1 is CC4011, and its 14 pin is power supply pin V
dD, its 7 pin is grounding leg Vss, 1, the 2 pin input as not gate A in Fig. 9 in parallel, and its 3 pin is the output of not gate A, 5, the 6 pin input as not gate B in parallel, and its 4 pin is the output of not gate B.
After circuit welds, the operating frequency of actual measurement pierce circuit 40 is 5.5KHz.Under 200V direct-current working volts, in Fig. 9, the output voltage of linear voltage-stabilizing circuit 30 is 15.6V, actual measurement is at 48V to 200V operation interval, the output voltage of linear voltage stabilization output 33 is between 13.4V to 15.3V, and this is that its voltage stabilizing value causes lower than nominal value 18V due under the first voltage stabilizing didoe D1 is operated in small area analysis, and third embodiment of the invention connects filter capacitor 1000pF and resistance 1M Ω as after load, actual measurement output voltage:
(1) under 48V direct-current working volts, output voltage is than operating voltage height 11.9V;
(2) under 100V direct-current working volts, output voltage is than operating voltage height 12.8V;
(3) under 200V direct-current working volts, output voltage is than operating voltage height 14.2V;
Under the operating voltage range of 48V to 200V, the power consumption of whole circuit is: 0.043mA to 0.107mA, and so power consumption is 2.07mW to 21.4mW, realizes object of the present invention completely.When third embodiment of the invention being connected filter capacitor 10nF and resistance 100K Ω after load, under the operating voltage range of 48V to 200V, the power consumption of whole circuit rises to: 0.161mA to 0.257mA, and power consumption is 7.728mW to 51.4mW.
Clearly, one end of the resistance R2 former connecting triode T1 collector electrode in Fig. 9 neutral line voltage stabilizing circuit 30, change into and be connected to Surge suppression input 21, i.e. input voltage vin, the other end of resistance R2 still connects the negative electrode of voltage stabilizing didoe D1, this method of attachment, reduce the voltage change range at resistance R2 two ends, value can more greatly a bit, namely because one end of resistance R2 is connected to Surge suppression input, when operating voltage is lower, voltage stabilizing didoe D1 can obtain relatively large operating current, is still in voltage stabilizing state.At present at the high-quality voltage-stabiliser tube of more than 10V, operating current is when 1uA, and its voltage stabilizing value can reach 96% of nominal value.Resistance R2 value becomes greatly, so also just reduces the current sinking of resistance R2 under maximum operating voltage, makes the voltage adaptation scope of booster circuit of the present invention wider.Figure 10 just shows this application, after triode T1 is changed to withstand voltage higher triode, is the metal-oxide-semiconductor of 600V as withstand voltage, and Figure 10 circuit can easily work 500V, and the power consumption of circuit of the present invention is still not more than 100mW.
The brief description of Figure 10:
Operating voltage range: 48V to 500V; Resistance R1 is 100K Ω, and resistance R2 is 9.1M Ω, and resistance R7 is 10K Ω, resistance R10 is 1M Ω, and electric capacity C1 is the CBB electric capacity of 0.015uF/630V, and electric capacity C2 is the patch capacitor of 0.1uF/25V, electric capacity C9 is the patch capacitor of 100pF, and electric capacity C5 is the CBB electric capacity of 0.01uF/630V; First voltage stabilizing didoe D1 is the wireless LBZT52B18T1G in Leshan, and the voltage stabilizing value of nominal is 18V, and the second diode D2, the 3rd diode D3 are 1N4148; First triode T1 is metal-oxide-semiconductor, and model is STD1NK60T4, and withstand voltage is 600V, cut-in voltage V
gSfor about 2.7V to 3.3V.First integrated circuit (IC) 1 is CC4011, and its 14 pin is power supply pin V
dD, its 7 pin is grounding leg Vss, 1, the 2 pin input as not gate A in Fig. 9 in parallel, and its 3 pin is the output of not gate A, 5, the 6 pin input as not gate B in parallel, and its 4 pin is the output of not gate B.
Because metal-oxide-semiconductor is voltage-controlled device, its grid not consumed DC current, so resistance R2 value is very large, and under 48V operating voltage, current sinking is about 3.3uA, and under 500V, under operating voltage, current sinking is about 53uA, to guarantee the low-power consumption of Figure 10 circuit realiration; This electric current flows through voltage stabilizing didoe D1 completely, just because of the operating current of voltage stabilizing didoe D1 is little, so select nominal voltage stabilizing value to be the LBZT52B18T1G voltage stabilizing didoe of 18V, under the electric current that 3.3uA to 53uA is so little, its actual voltage stabilizing value is 17.42V to 18.0V, after metal-oxide-semiconductor T1 voltage stabilizing, voltage reduces " cut-in voltage a V
gS", between 14.3V to 14.88V, ensure the normal work of follow-up CMOS integrated circuit (IC) 1 completely.Actual measurement is under the operating voltage of 500V, and the total working electric current of Figure 10 is 0.206mA, and power consumption is 103mW, achieves goal of the invention.
Equally, adopt discrete component also can realize low-power consumption, the 4th embodiment illustrates to be exactly this application.
4th embodiment
Figure 11 is the schematic diagram of the 4th embodiment, the place different with the first embodiment, one end of the resistance R2 former connecting triode T1 collector electrode in Fig. 5 neutral line voltage stabilizing circuit 30, change into and be connected to Surge suppression input 21, i.e. input voltage vin, the other end of resistance R2 still connects the negative electrode of voltage stabilizing didoe D1, this method of attachment, reduce the voltage change range at resistance R2 two ends, resistance R2 value can more greatly a bit, namely because one end of resistance R2 is connected to Surge suppression input 21, when operating voltage is lower, voltage stabilizing didoe D1 can obtain relatively large operating current, still be in voltage stabilizing state.Resistance R2 value becomes greatly, so also just reduces the current sinking of resistance R2 under maximum operating voltage, makes the voltage adaptation scope of booster circuit of the present invention wider.
As shown in figure 11, it is 100V to 200V that a kind of booster circuit is designed to input direct voltage, and power consumption is less than 100mW, and output voltage is all the time higher than input voltage 10V; The design parameter of Figure 11 circuit is as follows:
Resistance R1 is 100K Ω, and resistance R2 is 6.2M Ω, and resistance R3 is 47 K Ω, and resistance R4, R5 are 330K Ω, and resistance R6 is 24K Ω, and resistance R7 is 10K Ω; Electric capacity C1 is the electric capacity of 0.33uF/250V, and electric capacity C2 is the patch capacitor of 0.1uF/16V, and electric capacity C3, C4 are the patch capacitor of 680pF, and electric capacity C5 is the patch capacitor of 6800pF/250V; First voltage stabilizing didoe D1 is BZT52C13S, and nominal voltage stabilizing value is 13V, and the second diode D2, the 3rd diode D3 are 1N4148; First triode T1 is A42, and the actual measurement of its multiplication factor is about 80, and triode T2, triode T3 are 2N5551, and the actual measurement of its multiplication factor is about 200.
After circuit welds, the operating frequency of actual measurement pierce circuit 40 is 6.5KHz, actual measurement is at 100V to 200V operation interval, the output voltage of linear voltage stabilization output is between 12.00V to 12.44V, this is due under the first voltage stabilizing didoe D1 is operated in small area analysis, its voltage stabilizing value causes lower than nominal value, and first embodiment of the invention connects filter capacitor 1000pF and resistance 1M Ω as after load, actual measurement output voltage:
(1) under 100V direct-current working volts, output voltage is than operating voltage height 11.20V;
(2) under 200V direct-current working volts, output voltage is than operating voltage height 11.65V;
Under the operating voltage range of 100V to 200V, the power consumption of whole circuit is: 0.473mA to 0.506mA, and so power consumption is 47.3mW to 101.2mW, realizes object of the present invention completely.
5th embodiment
5th embodiment is on the basis of above-mentioned front four embodiments, voltage doubling rectifing circuit 50 part of the correspondence of Fig. 5, Fig. 8, Fig. 9, Figure 10, Figure 11, replace with 3 voltage doubling rectifing circuits shown in Figure 12,3 multiplication of voltages and above rectification circuit, be multiply background images circuit.The operation principle of multiply background images circuit is known technology, can with reference to People's Telecon Publishing House publish " stabilized power supply " first edition in 1984, standard book number is: 15045 total 2790-without 6260, the 28th page of final stage to 29 page the 5th row of this book.
As shown in figure 12, multiply background images circuit 50 comprises the 7th resistance R7, the second diode D2, the 3rd diode D3, the 4th diode D4, 5th electric capacity C5, the tenth electric capacity C10, the 11 electric capacity C11, its annexation is: the 7th resistance R7 and the 5th electric capacity C5 connects, the one end of two terminals formed after series connection is voltage multiplying rectifier input 51, the other end of two terminals formed after series connection connects the negative electrode of the second diode D2, connect the anode of the 3rd diode D3 simultaneously, the anode of the second diode D2 is that voltage multiplying rectifier holds 52 floatingly, the anode of the second diode D2 connects one end of the tenth electric capacity C10 simultaneously, the other end of the tenth electric capacity C10 connects the negative electrode of the 3rd diode D3, connect the anode of the 4th diode D4 simultaneously, between the anode of the 3rd diode D3 and the negative electrode of the 4th diode D3 and upper 11 electric capacity C11, the negative electrode of the 4th diode D4 is multiply background images output 53.
The multiply background images circuit of Figure 12 is changed to voltage doubling rectifing circuit 50 part of the correspondence of Fig. 5, Fig. 8, Fig. 9, Figure 10, Figure 11, equally realize goal of the invention, it should be noted that, after Figure 12 has substituted, the U2 of high about two times of the operating voltage of the output ratio input of circuit of the present invention, U2 is the output voltage of linear voltage-stabilizing circuit 30, i.e. circuit of the present invention output voltage U3=U1+2 × U2 over the ground.
For Figure 11 etc., if make integrated circuit, resistance R3, resistance R4, resistance R5, resistance R6 can realize with mirror-image constant flow source completely, thus realize integrated, picture resistance R1, resistance R2, electric capacity C1, electric capacity C5 equal-volume are large, can be external, thus the small package integrated circuit that realization SOP-8 is such.
In above-mentioned circuit; substitute electric capacity C1 with a voltage-stabiliser tube or be connected in parallel on electric capacity C1; also can normally work; described voltage-stabiliser tube is not in when circuit of the present invention normally works and punctures voltage stabilizing state; only have when input Vin has higher surge voltage, electric fast wink impulse train, described voltage-stabiliser tube is in and punctures voltage stabilizing state, like this; the input voltage of linear voltage-stabilizing circuit 30 is unlikely too high, and described voltage-stabiliser tube shields.
Below be only the preferred embodiment of the present invention, it should be noted that, above-mentioned preferred implementation should not be considered as limitation of the present invention, for those skilled in the art, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, as electric power polarity conversely, N-type triode is changed into P type triode, realize the booster circuit of positive pole altogether, these improvements and modifications also should be considered as protection scope of the present invention, here no longer repeat by embodiment, protection scope of the present invention should be as the criterion with claim limited range.
Claims (9)
1. a booster circuit, comprises surge restraint circuit, linear voltage-stabilizing circuit, pierce circuit, voltage doubling rectifing circuit; Described surge restraint circuit comprises three ports, Surge suppression input, Surge suppression output, Surge suppression earth terminal; Described linear voltage-stabilizing circuit comprises three ports, linear voltage stabilization input, linear voltage stabilization output, linear voltage stabilization earth terminal; Described pierce circuit comprises three ports, oscillator input, oscillator output end, oscillator earth terminal; Described voltage doubling rectifing circuit comprises three ports, and voltage multiplying rectifier input, voltage multiplying rectifier output, voltage multiplying rectifier are held floatingly; Its annexation is: described Surge suppression input is that power supply inputs positive port, and power supply input negative terminal mouth is ground wire, and described ground wire is connected with described Surge suppression earth terminal, described linear voltage stabilization earth terminal, described oscillator earth terminal; Linear voltage stabilization input described in described Surge suppression output connects, oscillator input described in described linear voltage stabilization output connects, voltage multiplying rectifier input described in described oscillator output end connects, described voltage multiplying rectifier holds the power supply described in connection to input positive port with floating, and described voltage multiplying rectifier output exports output voltage; Described voltage doubling rectifing circuit comprises the 7th resistance, the second diode, the 3rd diode, the 5th electric capacity; Its annexation is: the 7th described resistance and the 5th described capacitances in series, the one end of two terminals formed after series connection is described voltage multiplying rectifier input, the negative electrode of second diode described in other end connection of two terminals formed after series connection, connect the anode of the 3rd described diode simultaneously, the anode of the second described diode is that described voltage multiplying rectifier is held floatingly, and the negative electrode of the 3rd described diode is described voltage multiplying rectifier output; It is characterized in that: the output voltage of the linear voltage stabilization output of described linear voltage-stabilizing circuit is slightly larger than the gate drive voltage of metal-oxide-semiconductor; The operating current of described pierce circuit is at below 2mA.
2. booster circuit according to claim 1, is characterized in that: described surge restraint circuit comprises the first resistance, the first electric capacity; One end of the first described resistance is described Surge suppression input, and first electric capacity described in other end connection of the first described resistance, tie point is described Surge suppression output, and the other end of the first described electric capacity is described Surge suppression earth terminal.
3. booster circuit according to claim 1, is characterized in that: described linear voltage-stabilizing circuit comprises the second resistance, the first N-type triode, the first voltage stabilizing didoe, the second electric capacity, the linear voltage stabilization input that the current collection of the first described N-type triode is very described, the collector electrode of the first N-type triode described in the connection of one end of the second described resistance, the negative electrode of first voltage stabilizing didoe described in other end connection of the second described resistance, the base stage of the first N-type triode described in tie point connects, the anode of the first described voltage stabilizing didoe is described linear voltage stabilization earth terminal, described linear voltage stabilization earth terminal connects one end of the second described electric capacity simultaneously, the emitter of the first N-type triode described in other end connection of the second described electric capacity, tie point is described linear voltage stabilization output.
4. booster circuit according to claim 3, is characterized in that: the Surge suppression input described in the connection of one end of the second described resistance, other annexation is identical.
5. booster circuit according to claim 1, it is characterized in that: described pierce circuit is a two-tube multivibrator, comprise the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the second N-type triode, the 3rd N-type triode, the 3rd electric capacity, the 4th electric capacity; Its annexation is: the emitter of the second described N-type triode, the 3rd described N-type triode is connected, and tie point forms described oscillator earth terminal; One end of the 3rd described resistance, the 4th described resistance, the 5th described resistance, the 6th described resistance is connected, and tie point forms described oscillator input; The collector electrode of the second N-type triode described in other end connection of the 3rd described resistance, the base stage of the second N-type triode described in other end connection of the 4th described resistance, the base stage of the 3rd N-type triode described in other end connection of the 5th described resistance, the collector electrode of the 3rd N-type triode described in other end connection of the 6th described resistance; The collector electrode of the second described N-type triode also connects one end of the 3rd described electric capacity, the base stage of the 3rd N-type triode described in other end connection of the 3rd described electric capacity; The collector electrode of the 3rd described N-type triode also connects one end of the 4th described electric capacity, the base stage of the second N-type triode described in other end connection of the 4th described electric capacity; Wherein, the oscillator output end that the current collection of the 3rd described N-type triode is very described.
6. booster circuit according to claim 5, is characterized in that: by the 3rd described resistance, the 4th described resistance, the 5th described resistance or the 6th described active component or all replace with mirror-image constant flow source.
7. booster circuit according to claim 1, it is characterized in that: described pierce circuit is single tube sinusoidal oscillator, comprise the 5th resistance, the 6th resistance, the 8th resistance, the 9th resistance, the 3rd N-type triode, the 6th electric capacity, the 7th electric capacity, the 8th electric capacity; Its annexation is: the emitter of the 3rd described N-type triode is connected with one end of the 8th described resistance, the 9th described resistance, and tie point forms described oscillator earth terminal; One end of the 5th described resistance, the 6th described resistance is connected, and tie point forms described oscillator input; The base stage of the 3rd N-type triode described in other end connection of the 5th described resistance, the collector electrode of the 3rd N-type triode described in other end connection of the 6th described resistance; The oscillator output end that the current collection of the 3rd described N-type triode is very described; One end of the 6th electric capacity described in collector electrode connection of the 3rd described N-type triode, the other end of the 6th described electric capacity is connected with the 7th described electric capacity, the other end of the 7th described electric capacity is connected with the 8th described electric capacity, the other end of the 8th described electric capacity is connected with the base stage of the 3rd described N-type triode, the other end of the 8th resistance described in the 6th described electric capacity is connected with the tie point of the 7th described electric capacity, the other end of the 9th resistance described in the 7th described electric capacity is connected with the tie point of the 8th described electric capacity.
8. booster circuit according to claim 1, is characterized in that: described pierce circuit is CMOS integrated circuit, comprises the tenth resistance, the 9th electric capacity, the first integrated circuit, the first not gate and the second not gate; Described the first integrated circuit the 14th pin is feeder ear V
dD, the 7th pin is earth terminal Vss; Its annexation is: the feeder ear V of the first described integrated circuit
dDfor described oscillator input; The earth terminal Vss of the first described integrated circuit is described oscillator earth terminal; One end of the tenth resistance described in input connection of the first described not gate, connect one end of the 9th described electric capacity simultaneously, the output of the first described not gate is connected with the other end of the tenth described resistance, connect the input of the second described not gate simultaneously, the output of the second described not gate is connected with the other end of the 9th described electric capacity, and tie point is described oscillator output end.
9. booster circuit according to claim 1, is characterized in that: described voltage doubling rectifing circuit is that the voltage doubling rectifing circuit of more than three multiplication of voltages is formed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310020900.8A CN103078493B (en) | 2013-01-18 | 2013-01-18 | Boosted circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310020900.8A CN103078493B (en) | 2013-01-18 | 2013-01-18 | Boosted circuit |
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| CN103078493A CN103078493A (en) | 2013-05-01 |
| CN103078493B true CN103078493B (en) | 2015-02-25 |
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| CN103762968B (en) * | 2014-01-26 | 2017-09-15 | 深圳Tcl新技术有限公司 | Condenser type touch-switch, on-off circuit and key system |
| CN103746586A (en) * | 2014-02-16 | 2014-04-23 | 吴建堂 | Four hundred watt direct current inverter |
| EP3376659A1 (en) * | 2017-03-17 | 2018-09-19 | Fronius International GmbH | Welding current source |
| CN110676951B (en) * | 2019-09-05 | 2023-03-03 | 宁波大学 | Self-powered system based on ambient RF energy harvesting |
| CN111220890B (en) * | 2020-01-16 | 2022-05-27 | 河北工业大学 | Parameter characteristic detection device of power semiconductor device |
| CN112134258A (en) * | 2020-09-30 | 2020-12-25 | 深圳市振华微电子有限公司 | A DC power filter circuit with multiple protection functions |
| CN117748936B (en) * | 2024-02-19 | 2024-04-26 | 成都麦特斯科技有限公司 | Low-power consumption boost system |
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| US6985341B2 (en) * | 2001-04-24 | 2006-01-10 | Vlt, Inc. | Components having actively controlled circuit elements |
| JP5146011B2 (en) * | 2008-02-28 | 2013-02-20 | ダイキン工業株式会社 | Direct AC power converter |
| CN101499654B (en) * | 2008-10-23 | 2010-10-06 | 天水华天微电子股份有限公司 | Instant voltage peak and instant voltage surge suppressor |
| CN202650234U (en) * | 2012-04-27 | 2013-01-02 | 航天科工惯性技术有限公司 | Current carrier control-based signal transmission device |
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