CN103077884B - A kind of method solving film separation - Google Patents
A kind of method solving film separation Download PDFInfo
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- CN103077884B CN103077884B CN201310011946.3A CN201310011946A CN103077884B CN 103077884 B CN103077884 B CN 103077884B CN 201310011946 A CN201310011946 A CN 201310011946A CN 103077884 B CN103077884 B CN 103077884B
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- layer
- reflecting layer
- oxide
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- radio
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000000926 separation method Methods 0.000 title claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to field of semiconductor manufacture, particularly a kind of method solving film separation.Comprise the following steps: step one: in the upper surface deposit layer of oxide layer of wafer; Step 2: at the upper surface deposit one floor height dielectric layer of described oxide layer; Step 3: at upper surface deposit one deck anti-reflecting layer of described high dielectric layer, the oxide of described anti-reflecting layer and tantalum, as tantalum oxide, the power of the radio freqnency generator that anti-reflecting layer described in deposit uses is 1000 ~ 2000W.Power 4000 ~ the 6000W of the radio freqnency generator that existing technique uses, due to RF(Radio Frequency) radio-frequency power and membrane stress show stronger correlation, present invention optimizes this technological parameter, decrease the interfacial stress between anti-reflecting layer and bottom, the problem can effectively avoiding anti-reflecting layer to come off in reality is produced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method solving film separation.
Background technology
Tantalum oxide uses as anti-reflecting layer at backside illuminated image transducer, but it has the problem of peeling off, and to be considered between the oxide of tantalum and bottom heavily stressed causes for this problem, and this problem that comes off is in the urgent need to address.
Present stage, solution not relevant temporarily.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method solving film separation and solves the problem.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method solving film separation, comprises the following steps:
Step one: in the upper surface deposit layer of oxide layer of wafer, described deposit refers to that the mode of being piled up by chemical reaction or physics is increased;
Step 2: at the upper surface deposit one floor height dielectric layer of described oxide layer, described high dielectric layer refers to the layer that the material that dielectric constant is higher is formed, such as: PECVD(plasma enhanced CVD) SiO
2dielectric constant be 4.1 ~ 4.3;
Step 3: pass through radio freqnency generator deposit one deck anti-reflecting layer at the upper surface of described high dielectric layer.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described in deposit, the power of the radio freqnency generator of anti-reflecting layer use is 1000 ~ 2000W.
Further, described anti-reflecting layer is the oxide of tantalum.
The invention has the beneficial effects as follows: the power 4000 ~ 6000W of the radio freqnency generator that existing technique uses, due to RF(Radio Frequency: radio frequency) radio-frequency power and membrane stress show stronger correlation, present invention optimizes this technological parameter, power 4000 ~ the 6000W of the radio freqnency generator existing technique used is improved to 1000 ~ 2000W, decrease the interfacial stress between anti-reflecting layer and bottom, the problem can effectively avoiding film (anti-reflecting layer) to come off in reality is produced.
Accompanying drawing explanation
Fig. 1 is operational flowchart of the present invention;
Fig. 2 is structural representation of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, wafer, 2, oxide layer, 3, high dielectric layer, 4, anti-reflecting layer.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of method solving film separation, comprises the following steps:
Step 01: be structural representation of the present invention in the upper surface deposit layer of oxide layer 2, Fig. 2 of wafer 1, its structure is as shown in Figure 2;
Step 02: at the upper surface deposit one floor height dielectric layer 3 of described oxide layer 2, described high dielectric layer 3 refers to the layer that the higher material of dielectric constant is formed, such as: PECVD(plasma enhanced CVD) dielectric constant of SiO2 is 4.1 ~ 4.3;
Step 03: pass through radio freqnency generator deposit one deck anti-reflecting layer 4 at the upper surface of described high dielectric layer 3.
The power of the radio freqnency generator that anti-reflecting layer 4 described in deposit uses is 1000 ~ 2000W.
Described anti-reflecting layer is the oxide of tantalum, such as tantalum oxide.
Power 4000 ~ the 6000W of the radio freqnency generator that existing technique uses by the present invention is improved to 1000 ~ 2000W, decreases the interfacial stress between anti-reflecting layer and bottom, the problem can effectively avoiding film (anti-reflecting layer) to come off in reality is produced.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (1)
1. solve a method for film separation, it is characterized in that, comprise the following steps:
Step one: in the upper surface deposit layer of oxide layer of wafer;
Step 2: at the upper surface deposit one floor height dielectric layer of described oxide layer, described high dielectric layer is silicon oxide layer;
Step 3: pass through radio freqnency generator deposit one deck anti-reflecting layer at the upper surface of described high dielectric layer, described anti-reflecting layer is the oxide of tantalum, the power 2000W of the radio freqnency generator that anti-reflecting layer described in deposit uses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011946.3A CN103077884B (en) | 2013-01-14 | 2013-01-14 | A kind of method solving film separation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310011946.3A CN103077884B (en) | 2013-01-14 | 2013-01-14 | A kind of method solving film separation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103077884A CN103077884A (en) | 2013-05-01 |
| CN103077884B true CN103077884B (en) | 2015-09-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310011946.3A Active CN103077884B (en) | 2013-01-14 | 2013-01-14 | A kind of method solving film separation |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106148917B (en) * | 2015-04-03 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | Utilize the method and PECVD device of pecvd process deposit film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125783B2 (en) * | 2001-04-18 | 2006-10-24 | Integrated Device Technology, Inc. | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
| CN101065834A (en) * | 2004-08-24 | 2007-10-31 | 应用材料股份有限公司 | Low temperature process to produce low-k dielectrics with low stress by plasma-enhanced chemical vapor deposition(pecvd) |
| CN102280459A (en) * | 2010-06-11 | 2011-12-14 | 台湾积体电路制造股份有限公司 | Backside illuminated sensor processing |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050112876A1 (en) * | 2003-11-26 | 2005-05-26 | Chih-Ta Wu | Method to form a robust TiCI4 based CVD TiN film |
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2013
- 2013-01-14 CN CN201310011946.3A patent/CN103077884B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7125783B2 (en) * | 2001-04-18 | 2006-10-24 | Integrated Device Technology, Inc. | Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean |
| CN101065834A (en) * | 2004-08-24 | 2007-10-31 | 应用材料股份有限公司 | Low temperature process to produce low-k dielectrics with low stress by plasma-enhanced chemical vapor deposition(pecvd) |
| CN102280459A (en) * | 2010-06-11 | 2011-12-14 | 台湾积体电路制造股份有限公司 | Backside illuminated sensor processing |
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| CN103077884A (en) | 2013-05-01 |
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