CN103035590A - Insulated gate bipolar translator (IGBT) power module - Google Patents
Insulated gate bipolar translator (IGBT) power module Download PDFInfo
- Publication number
- CN103035590A CN103035590A CN2012105692635A CN201210569263A CN103035590A CN 103035590 A CN103035590 A CN 103035590A CN 2012105692635 A CN2012105692635 A CN 2012105692635A CN 201210569263 A CN201210569263 A CN 201210569263A CN 103035590 A CN103035590 A CN 103035590A
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- China
- Prior art keywords
- substrate
- power module
- layer
- igbt
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 7
- 238000005476 soldering Methods 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 10
- 239000011247 coating layer Substances 0.000 claims 3
- 229910000679 solder Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明提供一种具有高散热性能的IGBT功率模块，包括芯片、导热绝缘基板、基板，导热绝缘基板由上敷铜层、陶瓷层、下敷铜层组成，下敷铜层的厚度为1.5-2.0mm。本发明通过改变传统IGBT模块结构中材料的尺寸参数，提高了IGBT模块的散热性能，克服了背景技术中传统的IGBT模块存在的缺陷。本发明的IGBT功率模块和传统的IGBT功率模块相比，散热面积增大2-3倍，散热效率提高2-3倍。
The invention provides an IGBT power module with high heat dissipation performance, which includes a chip, a thermally conductive insulating substrate, and a substrate. The thermally conductive insulating substrate is composed of an upper copper layer, a ceramic layer, and a lower copper layer, and the thickness of the lower copper layer is 1.5-2.0mm. The invention improves the heat dissipation performance of the IGBT module by changing the size parameter of the material in the traditional IGBT module structure, and overcomes the defects of the traditional IGBT module in the background technology. Compared with the traditional IGBT power module, the IGBT power module of the present invention has 2-3 times larger heat dissipation area and 2-3 times higher heat dissipation efficiency.
Description
Technical field
The present invention relates to the IGBT power model.
Background technology
The fast development of power electronic technology is day by day urgent to the modular requirement of power electronic device, also the performance of module is had higher requirement simultaneously, and nowadays, power model is just towards high-power, high frequency, high reliability, low-loss future development.Therefore, challenge has been proposed the performance of heat conductive insulating substrate.The IGBT power model is as a kind of compound full-control type voltage driven type power semiconductor, has the advantage of low conduction voltage drop two aspects of the high input impedance of MOSFET and GTR concurrently.The structure of IGBT power model generally is made of the heat conductive insulating substrate between chip, substrate and chip and the substrate, at present, heat conductive insulating substrate in the IGBT modular structure adopts scale copper and pottery to consist of, yet, the employing of scale copper is unfavorable for scattering of heat, thereby has limited the radiating efficiency of IGBT module.
Summary of the invention
Technical problem to be solved by this invention provides a kind of IGBT power model, and it has high heat dispersion.
Technical solution technical scheme that problem adopts of the present invention is: a kind of IGBT power model, comprise chip, heat conductive insulating substrate, substrate, be fixedly connected with by the first soldering layer between chip and the heat conductive insulating substrate, be fixedly connected with by the second soldering layer between substrate and the heat conductive insulating substrate, the heat conductive insulating substrate is comprised of upper copper-clad, ceramic layer, lower copper-clad, and the thickness of lower copper-clad is 1.5-2.0mm.The heat conductive insulating substrate is with chip and substrate insulation, and between chip and substrate transferring heat, the heat conductive insulating substrate not only plays insulating effect, also play a part the conduction heat, be about to the heat that insulated gate bipolar transistor and diode chip for backlight unit produce and be transmitted to from top to down substrate, and then be transmitted to radiator by substrate, power model is dispelled the heat, about the heat conductive insulating substrate increases by 500 than the lower copper-clad thickness of the heat conductive insulating substrate in the conventional I GBT power model among the present invention, increased area of dissipation, overcome thin copper layer and be unfavorable for the defective that heat scatters, greatly improved the heat dispersion of IGBT power model.
When adopting technique scheme, further technical scheme below the present invention can also adopt or make up and adopt:
Substrate is the copper substrate.
The thickness of the first soldering layer is 0.05mm.
The thickness of the second soldering layer is 0.1mm.
The thickness of upper copper-clad is 0.3mm.
The thickness of ceramic layer is 0.6-0.65mm.
The invention has the beneficial effects as follows: by changing the dimensional parameters of material in the conventional I GBT modular structure, improved the heat dispersion of IGBT module, overcome the defective that traditional IGBT module exists in the background technology.IGBT power model of the present invention is compared with traditional IGBT power model, and area of dissipation increases 2-3 doubly, and radiating efficiency improves 2-3 doubly.
Description of drawings
Fig. 1 is the structural representation of IGBT power model of the present invention.
Embodiment
With reference to accompanying drawing.
IGBT module of the present invention comprises chip 1, heat conductive insulating substrate, copper substrate 7, be fixedly connected with by the first soldering layer 2 between chip 1 and the heat conductive insulating substrate, the thickness of the first soldering layer is 0.05mm, be fixedly connected with by the second soldering layer 6 between substrate 7 and the heat conductive insulating substrate, the thickness of the second soldering layer is 0.1mm, the heat conductive insulating substrate is formed by legal (DBC) between direct by upper copper-clad 3, ceramic layer 4, lower copper-clad 5, the thickness of lower copper-clad 5 is 1.5mm, is extended to 5 times than the lower copper-clad thickness 0.3mm in the conventional I GBT power model.The heat conductive insulating substrate is with chip 1 and substrate 7 insulation, and between chip 1 and substrate 7 transferring heat, the heat conductive insulating substrate is transmitted to substrate 7 from top to down with the heat that chip 1 produces, and then be transmitted to radiator by substrate 7, power model is dispelled the heat, the thickness of lower copper-clad 5 increases to 1.5mm by the 0.3mm in the conventional I GBT power model, and the heat radiation of the heat conductive insulating substrate of the lower copper-clad that adopts these two kinds of thickness is compared, and supposes that heat is with 45.Scatter under the angle, lower copper-clad thickness is increased to 1.5mm by 0.3mm after, area of dissipation will be increased to 2.3 times, namely radiating efficiency will be brought up to 2.3 times.
Above-mentioned specific embodiment is used for by reference to the accompanying drawings technical scheme of the present invention being further described in detail, but scope of the present invention can not be confined to the content of embodiment.One skilled in the art would recognize that the present invention contained all alternatives, improvement project and the equivalents that might comprise in claims scope.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105692635A CN103035590A (en) | 2012-12-25 | 2012-12-25 | Insulated gate bipolar translator (IGBT) power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105692635A CN103035590A (en) | 2012-12-25 | 2012-12-25 | Insulated gate bipolar translator (IGBT) power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103035590A true CN103035590A (en) | 2013-04-10 |
Family
ID=48022352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105692635A Pending CN103035590A (en) | 2012-12-25 | 2012-12-25 | Insulated gate bipolar translator (IGBT) power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103035590A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617967A (en) * | 2013-11-27 | 2014-03-05 | 浙江大学 | Power electronic module made of novel insulating materials |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5576934A (en) * | 1992-07-09 | 1996-11-19 | Robert Bosch Gmbh | Mounting unit for a multilayer hybrid circuit having power components including a copper coated ceramic center board |
| US20100295187A1 (en) * | 2007-12-20 | 2010-11-25 | Aisin Aw Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN102710102A (en) * | 2012-06-18 | 2012-10-03 | 南京银茂微电子制造有限公司 | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method |
| CN202585403U (en) * | 2012-03-05 | 2012-12-05 | 上海沪通企业集团有限公司 | Full-bridge single-tube IGBT packaging module |
-
2012
- 2012-12-25 CN CN2012105692635A patent/CN103035590A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5576934A (en) * | 1992-07-09 | 1996-11-19 | Robert Bosch Gmbh | Mounting unit for a multilayer hybrid circuit having power components including a copper coated ceramic center board |
| US20100295187A1 (en) * | 2007-12-20 | 2010-11-25 | Aisin Aw Co., Ltd. | Semiconductor device and method for fabricating the same |
| CN202585403U (en) * | 2012-03-05 | 2012-12-05 | 上海沪通企业集团有限公司 | Full-bridge single-tube IGBT packaging module |
| CN102710102A (en) * | 2012-06-18 | 2012-10-03 | 南京银茂微电子制造有限公司 | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617967A (en) * | 2013-11-27 | 2014-03-05 | 浙江大学 | Power electronic module made of novel insulating materials |
| CN103617967B (en) * | 2013-11-27 | 2017-01-04 | 浙江大学 | A kind of electric power electronic module using new insulation material |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130410 |