CN103022152A - Thin film transistor - Google Patents
Thin film transistor Download PDFInfo
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- CN103022152A CN103022152A CN201210583089XA CN201210583089A CN103022152A CN 103022152 A CN103022152 A CN 103022152A CN 201210583089X A CN201210583089X A CN 201210583089XA CN 201210583089 A CN201210583089 A CN 201210583089A CN 103022152 A CN103022152 A CN 103022152A
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- film transistor
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- active layer
- transistor according
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- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229910005265 GaInZnO Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- Thin Film Transistor (AREA)
Abstract
The invention relates to a thin film transistor device and a production method thereof. The device comprises a substrate 11, a source drain 19, an active layer 17, an insulating layer 15 and a grid 13, wherein the active layer is oxide containing VB group metal. The structural layers are prepared through vacuum evaporation and sputtering. The thin film transistor is much simpler in process, and more excellent in performance.
Description
Technical field
The invention belongs to field of thin film transistors, be specifically related to a kind of oxide thin film transistor.
Background technology
Thin-film transistor (TFT) is a kind of field-effect transistor of making by the film of deposited semiconductor material in the insulating supporting substrate.Now, commercially available product (such as notebook, PC monitor, TV, mobile device etc.) major part comprises amorphous silicon film transistor (a-Si TFT).The increase of the demand of and display unit that picture quality higher larger along with size needs electron mobility than the electron mobility of a-Si TFT (0.5cm for example
2/ Vs to 1cm
2/ Vs) high high performance thin film transistor and manufacturing technology.
Multi-crystal TFT has the performance that is better than a-Si TFT.Polysilicon (polycrystalline Si) TFT has tens cm
2/ Vs is to hundreds of cm
2The mobility of/Vs, so required data drive circuit or the peripheral circuit of high mobility can be embedded in the substrate.In addition, the raceway groove of such TFT can be manufactured into short, so the aperture opening ratio of screen can be high.In addition, because drive circuit is embedded in the substrate, thus arranging aspect the wiring that connects drive circuit there is not the restriction of pitch according to the increase of number of pixels, so can realize high-resolution, can reduce turn-on voltage and power consumption, and polycrystalline Si TFT can have less deterioration in characteristics.Yet, complicated for the manufacture of the crystallization process of polycrystalline Si TFT, so manufacturing cost can increase.In addition, because technical problem does not also realize using polycrystalline Si TFT to the manufacturing of large-scale substrate up to date.
The amorphous oxide semiconductor device that oxide semiconductor devices can be divided into the crystalline oxides semiconductor device that comprises crystalline oxides (for example ZnO) and comprise amorphous oxides (for example GIZO (GaInZnO)).The amorphous oxide semiconductor device can be made at low temperatures, can easily make large size, and has high mobility and excellent electrical characteristics as polycrystalline Si TFT.Therefore, in order in the channel region of TFT, to use oxide semiconductor layer, currently study.
Summary of the invention
The invention provides a kind of thin-film transistor, comprise substrate, source-drain electrode, active layer, insulating barrier and grid, wherein active layer is for containing the VB family metal oxide.
Above-mentioned VB family metal oxide comprises one or more of V, Nb and Ta.
Above-mentioned substrate is the flexibility or rigidity substrate.
Above-mentioned resilient coating is organic substance or inorganic matter.
Above-mentioned organic substance is epoxy resin and light-sensitive material.
Above-mentioned inorganic matter is Si oxide, silicon nitride.
A kind of manufacture craft of thin-film transistor is used for making above-mentioned transistor, it is characterized in that each structure sheaf adopts respectively following method successively to prepare successively by the structure sheaf order:
(1) adopt vacuum evaporation or sputtering technology to prepare grid.
(2) adopt magnetron sputtering Si generating silicon dioxide as dielectric insulation layer.
(3) adopt magnetically controlled sputter method to prepare the oxide active layer.
(4) form one deck ITO or metal as source electrode and drain electrode by vacuum evaporation or sputtering technology.
The present invention has proposed brand-new active layer material compared with prior art, has improved device performance, has widened the range of choice of active layer material.Manufacture craft innovation of the present invention is to utilize magnetron sputtering technique to prepare resilient coating
Description of drawings
Fig. 1 is thin-film transistor structure schematic diagram of the present invention.
Embodiment
Referring to Fig. 1, Fig. 1 shows the structural representation of thin-film transistor 10 of the present invention, comprises substrate 11, source-drain electrode 19, active layer 17, insulating barrier 15 and grid 13, and wherein active layer is for containing the VB family metal oxide.Above-mentioned VB family metal oxide comprises one or more of V, Nb and Ta, is preferably VInZnO.This substrate is the flexibility or rigidity substrate, is preferably glass, plastics.Resilient coating is organic substance or inorganic matter, and organic substance is for being preferably epoxy resin and light-sensitive material.Inorganic matter is preferably Si oxide, silicon nitride.
Above-mentioned each structure sheaf preparation method is as follows:
(1) adopt vacuum evaporation or sputtering technology to prepare grid.
(2) adopt magnetron sputtering Si generating silicon dioxide as dielectric insulation layer.
(3) adopt magnetically controlled sputter method to prepare the oxide active layer.
(4) form one deck ITO or metal as source electrode and drain electrode by vacuum evaporation or sputtering technology.
Among the present invention, propose brand-new active layer material, improved device performance, widened the range of choice of active layer material.
In the technique of preparation thin-film transistor of the present invention, device is out compared with traditional devices, and maximum difference is that insulating barrier adopts magnetron sputtering technique, and it is simple to have technique than the preparation method of PECVD, and finished product is cheap, the many advantages such as environmental protection.Technology that this experiment is used comprises vacuum evaporation technology, magnetron sputtering technique.The prepared device of the present invention is improved in performance: mobility increases by 20%, reaches 1.28cm
2/ Vs, devices switch compares I
On/ I
OffIncrease by 3 orders of magnitude, and order of magnitude of the reduction of the film surface trap states density between active layer and the insulating barrier, reach 2.25 * 10
11Cm
-2Therefore, above-mentioned device architecture and preparation method, it is simple to have technique, with low cost, is easy to the plurality of advantages such as industrialization.
Claims (7)
1. a thin-film transistor comprises substrate, source-drain electrode, active layer, insulating barrier and grid, and wherein active layer is for containing the VB family metal oxide.
2. thin-film transistor according to claim 1 is characterized in that above-mentioned VB family metal oxide comprises one or more of V, Nb and Ta.
3. thin-film transistor according to claim 1 is characterized in that above-mentioned substrate is the flexibility or rigidity substrate.
4. thin-film transistor according to claim 1 is characterized in that above-mentioned resilient coating is organic substance or inorganic matter.
5. thin-film transistor according to claim 4 is characterized in that above-mentioned organic substance is epoxy resin and light-sensitive material.
6. thin-film transistor according to claim 4 is characterized in that above-mentioned inorganic matter is Si oxide, silicon nitride.
7. the manufacture craft of a thin-film transistor is used for making the thin-film transistor of claim 1-6, it is characterized in that each structure sheaf adopts respectively following method preparation:
(1) adopt vacuum evaporation or sputtering technology to prepare grid.
(2) adopt magnetron sputtering Si generating silicon dioxide as dielectric insulation layer.
(3) adopt magnetically controlled sputter method to prepare the oxide active layer.
(4) form one deck ITO or metal as source electrode and drain electrode by vacuum evaporation or sputtering technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210583089XA CN103022152A (en) | 2012-12-26 | 2012-12-26 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210583089XA CN103022152A (en) | 2012-12-26 | 2012-12-26 | Thin film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103022152A true CN103022152A (en) | 2013-04-03 |
Family
ID=47970516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210583089XA Pending CN103022152A (en) | 2012-12-26 | 2012-12-26 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103022152A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681925A (en) * | 2007-06-19 | 2010-03-24 | 三星电子株式会社 | Oxide semiconductors and thin film transistors comprising the same |
| CN102270644A (en) * | 2010-06-04 | 2011-12-07 | 三星电子株式会社 | Thin film transistor display panel and manufacturing method thereof |
| CN102420289A (en) * | 2011-10-28 | 2012-04-18 | 华南理工大学 | Tantalum-doped oxide semiconductor material and preparation method and application thereof |
-
2012
- 2012-12-26 CN CN201210583089XA patent/CN103022152A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101681925A (en) * | 2007-06-19 | 2010-03-24 | 三星电子株式会社 | Oxide semiconductors and thin film transistors comprising the same |
| CN102270644A (en) * | 2010-06-04 | 2011-12-07 | 三星电子株式会社 | Thin film transistor display panel and manufacturing method thereof |
| CN102420289A (en) * | 2011-10-28 | 2012-04-18 | 华南理工大学 | Tantalum-doped oxide semiconductor material and preparation method and application thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130403 |