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CN103021779A - Plasma reactor - Google Patents

Plasma reactor Download PDF

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Publication number
CN103021779A
CN103021779A CN2012103922666A CN201210392266A CN103021779A CN 103021779 A CN103021779 A CN 103021779A CN 2012103922666 A CN2012103922666 A CN 2012103922666A CN 201210392266 A CN201210392266 A CN 201210392266A CN 103021779 A CN103021779 A CN 103021779A
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Prior art keywords
gas
plasma
reactor
stream
plasma reactor
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Granted
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CN2012103922666A
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CN103021779B (en
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G.P.奈特
A.钱伯斯
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BOC Group Ltd
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BOC Group Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/10—Treatment of gases
    • H05H2245/17—Exhaust gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treating Waste Gases (AREA)
  • Plasma Technology (AREA)

Abstract

A plasma reactor comprises a reaction chamber and an inlet head connected to the reaction chamber. The inlet head comprises an open end connected to the reaction chamber, a plasma inlet located opposite to the open end, an inner surface tapering from the open end towards the plasma inlet, and first and second gas inlets each located between the plasma inlet and the open end. A plasma torch injects a plasma stream into the reaction chamber through the plasma inlet, which is shaped to cause the plasma stream to spread outwardly towards the first and second gas inlets. This shaping of the inlet head and the plasma inlet can enable the plasma stream to impinge upon gas streams as they exit from the gas inlets and thereby cause a significant proportion of at least one component of the gas streams to be reacted before the gas streams begin to mix within the chamber.

Description

Plasma reactor
The application be application number 200880025328.1, the applying date are July 14 in 2008 day, be called the dividing an application of application for a patent for invention of " plasma reactor ".
The present invention relates to plasma reactor.Described device can be used in particular for plasma and eliminate (abatement) system, for the treatment of the gas stream of discharging from process chamber.
The key step of making semiconductor equipment is that the chemical reaction by vapor precursor forms film at semiconductor substrate.A kind of known technology of deposit film on substrate is chemical vapour deposition (CVD) (CVD).In this technology, process gas is offered the process chamber of laying substrate, and the reaction and form film at substrate surface.Offer process chamber and the example of film forming gas includes, but are not limited to:
Silane and ammonia are used to form silicon nitride film;
Silane, ammonia and nitrous oxide (nitrous oxide) are used to form the SiON film;
One of TEOS and oxygen and ozone are used to form silicon oxide film; With
Al (CH 3) 3And steam, be used to form aluminum oxide film.
Plasma etch process also carries out with the etched circuit feature in process chamber usually.Etching gas generally is perfluorochemical (perfluorocompound) gas such as CF 4, C 2F 6, CHF 3, NF 3And SF 6
The inner surface of process chamber also cleans termly and remove unwanted deposition materials from described chamber.A kind of method of cleaning described chamber provides the perfluorochemical purge gas, such as NF 3Or C 2F 6, in order to react with unwanted deposition materials.
Process tool has a plurality of process chambers usually, and each can be in the corresponding different phase of deposition, etching or cleaning.The composition of the gas stream of discharging from process chamber typically comprises the gas that offers process chamber of surplus and from the accessory substance of technique.Therefore, during processing, can have various the composition by the waste stream that is combined to form of the gas of discharging from each chamber.
Process gas such as silane and TEOS, and purge gas such as perfluorochemical be breakneck, if be discharged to atmosphere, and therefore, before Exhaust Gas was discharged into atmosphere, they were sent to cancellation element.Cancellation element changes into component more dangerous in the Exhaust Gas can easily to scrub the material of removing and/or the material that can be discharged to safely atmosphere by routine.
Current trends are towards the technology for eliminating development without fuel, and use as everyone knows plasma abatement apparatus, can be removed expeditiously and at lower cost from the material of not expecting in the Exhaust Gas of etch process chamber.Eliminate in the technique at plasma, so that the bump that gas stream flows into high-density plasma and the plasma species in the gas stream stands high energy electron under intensified condition, so that resolve into reactive materials, it can be combined with oxygen or hydrogen and produce metastable accessory substance.For example, C 2F 6Can be converted into CO, CO 2And HF, it can be removed in other treatment step.Therefore be desirable to the expansion plasma abatement technique in order to can make single abatement apparatus without fuel for the treatment of the Exhaust Gas from the process chamber of certain limit.
Yet, depending on the technique of in each chamber, carrying out, different Exhaust Gas may comprise chemical substance incompatible with each other.For example, the Exhaust Gas from the chamber of wherein carrying out the silica depositing operation may comprise TEOS, oxygen and SiO 2Particle (it produces in this chamber).On the other hand, from wherein carrying out NF 3The Exhaust Gas of the chamber of cleaning may comprise fluorine gas (F 2).TEOS will spontaneously burn when contacting with fluorine gas, and this causes fire or blast potentially in the Exhaust Gas pipe-line system.Although these gas streams can be processed respectively with corresponding cancellation element, this has increased the cost relevant with the elimination system.
In addition, in order to optimize the destruction efficient of microwave plasma abatement apparatus, about 1 square millimeter typically of gas access.Therefore, diameter may cause the rapid obstruction of the entrance of plasma abatement apparatus for several microns the existence of particle only in Exhaust Gas.
The target of preferred at least embodiment of the present invention is to manage to address these and other problems.
In first aspect, the invention provides plasma reactor, it comprises:
Reative cell;
Enter oral, it has the openend that is connected to reative cell, be positioned at the plasma entrance relative with openend, the inner surface that diminishes gradually to the plasma entrance from openend, and the first and second gas accesses between plasma entrance and openend separately; With
Be used for by the plasma entrance plasma stream being injected the plasmatorch of reative cell;
Wherein, the plasma entrance is so shaped that plasma stream outwards scatters (spread outwardly) towards the gas access.
Enter oral and plasma entrance this shaping can so that plasma stream can strike on the gas stream, when gas stream leaves from the gas access.Plasma stream can provide energy source, and its at least a component that can cause the gas stream of suitable vast scale begins to react before indoor mixing at gas stream.
For example, if a kind of component of gas stream is flammable and is transported in the reactor with the oxidant of q.s, plasma stream can be in reactor gas stream mix with other gas stream prerequisite for be used for causing this combustible components basically completely, the ignition energy of controlled burning.This combustible components that may be suppressed at a kind of gas stream is for example uncontrolled reaction that occurs in plasma reactor between the fluorine gas of component of TEOS and other gas stream for example.This component of other gas streams can with for example steam (offer separately reative cell or before in gas stream, carried secretly) reaction of reactant, wherein plasma stream provides the energy source that promotes this reaction.
As a result, plasma reactor can be used for processing simultaneously the gas stream of discharging from two process chambers with the power consumption that reduces and cost, than the elimination system that comprises plasma reactor for each gas stream.
The high-temperature reactor that can not assemble for producing technique powder wherein, reative cell preferably include circumferential body and provide the device (means) of gas in order to suppress deposit accumulation thereon to the inner surface of circumferential body.This feature can not have above-mentionedly to enter in the oral plasma reactor to provide, and therefore in second aspect, the invention provides plasma reactor, and it comprises:
Reative cell;
At least one is used for providing to reaction chamber plasma the gas access of gas; With
Be used for plasma stream is injected the plasmatorch of reative cell;
Wherein reative cell comprises circumferential body and provides the device of gas in order to suppress deposit accumulation thereon to the inner surface of circumferential body.
Circumferential body can comprise the porous annular construction member, and wherein the gas generator comprises the plenum chamber (plenum chamber) that extends for receiver gases around annular construction member.Gas is from plenum chamber by annular construction member and evict any deposit that may accumulate on the annular construction member inner surface under pressure.
Can generator (means) so that heating offers the gas of the inner surface of circumferential body.Device can be provided by the resistance heater that is arranged in plenum chamber, is perhaps alternatively provided by the heater around plenum chamber.Heating the gas that offers reactor chamber can be so that high temperature can be held along the length of reactor chamber, and the component that improves thus gas stream is exposed to the time span of the hot conditions that produces and therefore improves the elimination performance of reactor in the chamber.
Gas can be inert purge gas, for example nitrogen or argon gas, and can comprise reactant, and steam for example, oxygen, hydrogen or methane are used for and the component reaction that enters the gas stream of reactor by one of gas access.This can be provided for reactant is offered the suitable mechanism of reactor chamber, because require that other gas provides reactant is not offered reactor chamber.
Cooling tower can provide under reative cell and with the reative cell fluid communicatively with being used for the device of maintenance along the discharge of the inner surface of cooling tower.This can be so that leave the reaction product stream of reative cell and can be cooled, simultaneously so that in the gas stream contained sour gas such as HF can be brought into solution by the current that coat the tower inner surface, and in addition so that solid particulate matter can be caught by this current.Cooling tower also can comprise heat exchanger in order to reclaim the other parts that heat offers reactor.
The first gas access is preferably located in relative on diameter with the second gas access.Preferably select the shape of inner surface so that it strictly meets the shape of plasma stream, be minimized in thus the length of the gas path between gas access and the plasma stream.For example, entering oral inner surface can be conical or Frusto-conical (frustro-conical) basically, and wherein the cone angle of inner surface is selected as strictly match plasma logistics and expands outwardly (flare outwardly) residing angle from the plasma entrance.
Each gas access comprises the nozzle for the treatment of the gas stream processed at reative cell for reception, and is used for receiving the circular passage of extending around nozzle of purge gas.This purge gas can be used for cooling enter oral, additional advantage be by purge gas from enter oral the heat of taking-up again introduced by purge gas and got back to reative cell.Purge gas can comprise relative inertness gas, such as nitrogen or argon gas, and can comprise reactant, such as hydrogen, and steam, oxygen or methane are used for and the component reaction that is transported to the gas stream of reactor by the gas access.Nozzle can stop in the gas access so that the chance that provides reactant to mix with gas stream before it leaves the gas access.Entrance also can comprise the reactant gas inlet tube, and it extends in the nozzle, is centered on one heart by nozzle and circular passage.The reactant gas that leads to the reactant gas inlet tube can comprise, for example, and hydrogen, steam, methane or oxygen.The reactant gas that leads to the reactant gas inlet tube can be except any reactant that leads to the circular passage, or substitutes any reactant that leads to the circular passage.
Enter the oral device that can comprise between plasma entrance and reative cell, be used for towards the first and second gas access directing plasma logistics, further reduce to extend to from the gas access thus the gas path of plasma stream.For example, ceramic main body can enter oral among and be so shaped that plasma stream is directed in main body and enter in the taper shape or conical butt passage between the oral inner surface.Can generator in order to produce gas blanket at the main body outer surface.For example, ceramic main body can be porous, thereby wherein gas stream is provided for this main body and produces gas blanket at the outer surface of main body.This gas blanket can provide the protective gas border for ceramic main body.Gas also can comprise reactant, is used for and the component reaction that enters the gas stream of reactor by one of gas access.If cooling water is offered main body, this can provide source of water vapor, and it is used for the component reaction with gas stream.
With reference to the accompanying drawings, as just for example, now preferred feature of the present invention will be described, in the accompanying drawings:
Fig. 1 is the cutaway view of the first embodiment of plasma reactor;
Fig. 2 is the cutaway view of the second embodiment of plasma reactor; With
Fig. 3 is the cutaway view of the 3rd embodiment of plasma reactor.
Fig. 4 is the cutaway view of the 4th embodiment of plasma reactor.
At first referring to Fig. 1, the first embodiment of plasma reactor comprises reactor chamber 12.Reactor chamber 12 is columniform basically, and by inner surface 14 gauges of circumferential body 16.In this embodiment, circumferential body 16 is provided by the porous ceramic annular construction member, and it is centered on by the filled volume 18 that forms between circumferential body outer surface and cylinder blanket 20.As hereinafter in greater detail, by one or more inlet nozzles 22, gas is introduced into filled volume 18, so that during use, gas enters reactor chamber 12 by circumferential body 16, points out such as 24 places among Fig. 1.
The lower end of reactor chamber 12 (as shown) is open in order to allow product from reactor chamber 12 outputs.The upper end of reactor chamber 12 (as shown) is connected to into oral 30, in order to provide pending gas to reactor chamber 12.Enter oral 30 and comprise the open lower end 32 that is connected to reative cell 12 and be positioned at the plasma entrance 34 relative with openend 32, wherein enter oral 30 inner surface 36 and diminish gradually towards plasma entrance 34 from openend 32.
Dc plasmatorch 38 is positioned at into oral 30 outside so that by the 34 injected plasma logistics of plasma entrance.Plasma stream can be by any ionogenic plasma source gas will, for example argon gas or nitrogen gas generation.Plasma entrance 34 is so shaped that plasma stream outwards scatters, when it leaves plasma entrance 34.In this embodiment, plasma entrance 34 has inwall, it has the converging portion adjacent with plasmatorch 38, and with entering oral 30 inner surface 36 adjacent diffuser so that plasma stream expands outwardly from plasma entrance 34 with plasma expansion angle α.Enter the shape that oral 30 inner surface 36 is shaped to strictly meet plasma stream.In this embodiment, inner surface 36 is Frusto-conical basically, and it has cone angle beta, and this cone angle beta is match plasma angle of flare α strictly.
Enter oral 30 and also comprise the first gas access 40 and the second gas access 42, separately at plasma entrance 34 with enter between oral 30 the openend 32 and with substantially parallel direction to extend through into oral 30.Each gas access 40,42 is connected to corresponding gas pipeline 44,46 is provided, and it will treat that the gas of processing is provided to its corresponding gas access 40,42 in plasma reactor.As Figure 1-3, entrance 40,42 can be arranged in order to provide along the downward direction parallel with the inner surface 14 of circumferential body 16 and treat the gas processed by plasma reactor.Entrance 40,42 also can be arranged so that by guiding at an angle entrance 40,42 to provide pending gas by plasma reactor to entering (not shown) in oral 30 along the downward hand of spiral, and has therefore improved the time of staying of gas in reactor.Nozzle 48 be provided in each gas access 40,42 in case receive from gas supply pipe road 44,46 gas and with gas inject in reative cell 12.Each nozzle 48 is centered on by the annular gas passage 50 that limits between the outer surface of nozzle 48 and gas access 40,42 inner surface, and to wherein providing purge gas so that cooling enters oral 30 between the operating period of plasma reactor.
Offer gas access 40,42 gas can comprise the Exhaust Gas from semiconductor process chamber, wherein each gas access 40,42 is arranged to receive the gas from different process chambers.For example, in certain moment, the gas that is transported to gas pipeline 44 can be from wherein carrying out the Exhaust Gas of the process chamber of silica depositing operation, and the gas that is transported to gas pipeline 46 can be the Exhaust Gas from the different process chamber that wherein carries out cleaning.Therefore, the gas that is provided for reactor can be inconsistent; In this embodiment, a kind of gas can comprise TEOS, and other gases can comprise fluorine gas.
Enter oral 30 design can so that plasma stream can strike on these gases, when they from the gas access 40,42 when entering plasma reactor.The shape of inner surface 36 mean each gas access 40,42 and plasma stream between only have relatively short gas path, and therefore before by the plasma stream bump chance of gas mixing very little.Plasma stream can provide energy source, and its at least a component that can cause the gas of suitable vast scale begins to react before reative cell 12 interior mixing at gas.For example, plasma stream can be provided for eliminating the imflammable gas that comprises with the Exhaust Gas from deposition chamber such as the ignition source of TEOS.TEOS discharges from have the chamber of a certain amount of oxidant as oxygen or ozone so usually, and therefore prerequisite is to have enough oxidants in gas, and the basically completing combustion of imflammable gas can be carried out in reactor.If for the completing combustion of imflammable gas, contained oxidant is not enough in Exhaust Gas, other oxidant can be offered purge gas, and this purge gas is provided for around the gas access circular passage 50 of 44 nozzle 48.
As mentioned above, the gas that is transported to gas pipeline 46 can be from the Exhaust Gas that wherein carries out the process chamber of cleaning, and therefore can comprise purge gas, such as NF 3, and the fluorine gas (F that during cleaning, produces 2) and SiF 4By realizing F by plasma stream heated air to enough temperature 2And SiF 4Elimination, the reaction of these materials and steam is rapidly and completely.In addition, steam can be provided for reactor, is entrained in the purge gas, and this purge gas is provided for around the gas access gas passage 50 of 46 nozzle, so that reaction can enter beginning in oral 30.Perhaps, when imflammable gas when being eliminated near gas access 44 parts very much, in reative cell 12, will there be imflammable gas seldom, if any, and therefore steam can be provided for reative cell 12, be entrained in the purge gas that is provided for plenum chamber 18, so that fluorine gas and SiF 4Carry out in reative cell 12 with reacting completely of steam.NF 3With temperature and the long time of staying that the elimination of other perfluorochemical need to improve, this offers plenum chamber 18 (moisture) purge gas by heating and realizes.Purge gas can heat with the resistance heater that is arranged in plenum chamber 18 or by the heating jacket around plenum chamber 18.
When one of gas that enters plasma reactor can be Exhaust Gas from the process chamber that wherein carries out silica deposit, the particle of silicon dioxide can enter reactor.This is because during depositing operation, and is optimised in order to minimize gas-phase reaction and maximize surface reaction in order to form continuous film at substrate in the condition that is right after substrate.Yet, the condition at other place and do not optimized like this in the condition in downstream, chamber in the chamber, and the gas-phase nucleation effect can cause forming particle.These particles form with the certain size scope usually, diameter be several microns until diameter is tens of or hundreds of microns, and thinner particle may often be assembled and forms larger particle.Purge gas provided by circumferential body 16 be used for from the inner surface 14 of circumferential body 16, evicting from any such particle, thus so that reative cell 12 can between the operating period of reactor, be maintained in the relative clean conditions.
Therefore the gas stream of discharging from the open bottom end of reative cell 12 will comprise coming the accessory substance of the reaction of carrying out the comfortable reactor, and other gas by reactor such as purge gas and the not reactant of consumption, and solid particulate matter.The open bottom end of reative cell is connected to columniform after-burner 60, and it comprises the water-cooling tower 62 for the gas stream that receives stream autoreaction chamber 12.By the pipe (not shown) water extraction is supplied with the cannelure 64 that centers on cooling tower 62, so that water overflows from the top of groove 64 and the inner surface of suitable cooling tower 62 flows down.Water is used for refrigerating gas logistics and prevent that solid particulate matter is deposited on the surface of cooling tower 62.In addition, any acidic components of gas stream can be brought into solution by water.If need any other quenching, the spray injection device can be arranged on the lower end of chamber 60 in order to introduce water smoke.
The gas stream of the outlet discharging by chamber 60 and water can be transported to the separator (not shown) in case from gas stream Separation of Water, it comprises solid particulate matter and acidic materials now.Then gas stream can be transferred by wet scrubber and remove remaining acidic materials from gas stream, then it is discharged in the atmosphere.
The second embodiment of plasma reactor illustrates in Fig. 2.The second embodiment comprises whole features of the first embodiment, comprise in addition being positioned at the conical ceramic main body 70 relative with plasma entrance 34, in order to be directed to plasma stream in main body 70 and enter in the conical passage 72 between oral 30 the inner surface 36.Main body 70 can be connected to the bottom into oral 30, circumferential body 16 or shell 20.The direction that plasma stream enters conicylindrical passage 72 has also reduced the gas path that extends to plasma stream from each gas access 40,42, thus so that gas processed and before basically from gas, removing at least a component gas in reactor, mix and become more difficult.
The 3rd embodiment of plasma reactor illustrates in Fig. 3.The 3rd embodiment comprises whole features of the first embodiment, and comprise enter oral 30 and circumferential body 16 between the second circumferential body 80.This second circumferential body is also preferably provided by the porous ceramic annular construction member, and described porous ceramic annular construction member is centered on by the filled volume 82 that forms between the outer surface of circumferential body 80 and cylinder blanket 84.As for circumferential body 16, by one or more inlet nozzles 86, gas is introduced into filled volume 82, so that, during use, gas enters reactor chamber 12 by the second circumferential body 80, points out such as 88 places among Fig. 3, in order to particle is evicted from from the inner surface 90 of the second circumferential body 80.As in the first embodiment, before entering reative cell 12, this gas preferably is heated.
Except the length that improves reative cell 12, with therefore gas outside the time of staying in plasma reactor, comprise that this second circumferential body 80 and relevant plenum chamber 82 can so that can use different flow of sweep gas speed, purge gas to form and temperature along the length of reative cell 12, eliminate chemical process in order to can treat the gas optimization of processing in reactor.For example, plenum chamber 82 can charging with the purge gas of the enrichment oxidant that is used for eliminating hydrogen, and the purge gas of enrichment steam can be provided for plenum chamber 18 in order to eliminate oxidant such as fluorine gas or NF 3
The 4th embodiment of plasma reactor illustrates in Fig. 4.The 4th embodiment comprises whole features of the 3rd embodiment, and comprises reactant gas inlet tube 100, and it is provided in nozzle 48 and the annular gas passage 50 and by it and centers on one heart.With any reactant gas that provides by gas passage 50, any reactant gas that provides by gas passage 50 perhaps is provided, reactant gas offers pending gas by reactant gas inlet tube 100.Should be understood that reactant gas inlet tube 100 can have any in the described embodiment herein among Fig. 1 to 3, and be not limited to the embodiment shown in Fig. 4.In addition, the arrangement with respect to the reactant gas inlet tube of purge gas entrance is not limited to the arrangement shown in Fig. 4.For example, reactant gas inlet tube 100 can be arranged like this, so that before entering chamber 12, all gas mixes mutually.

Claims (14)

1. a plasma is eliminated reactor, comprising:
Reative cell;
Enter oral, it has the openend that is connected to reative cell, be positioned at the plasma entrance relative with openend, the inner surface that diminishes gradually to the plasma entrance from openend, and the first and second gas accesses between plasma entrance and openend separately; With
Be used for by the plasma entrance plasma stream being injected the plasmatorch of reative cell;
Wherein, the plasma entrance is so shaped that plasma stream outwards scatters towards the gas access.
2. according to claim 1 plasma reactor, wherein the first gas access is positioned at relative on diameter with the second gas access.
3. according to claim 1 and 2 plasma reactor, wherein entering oral inner surface is Frusto-conical basically.
4. according to each plasma reactor in the aforementioned claim, wherein the gas access extends through into oral with substantially parallel direction.
5. according to each plasma reactor in the aforementioned claim, wherein each gas access comprises the nozzle for the treatment of the gas stream processed at reative cell for reception, and is used for receiving the circular passage of extending around nozzle of purge gas.
6. according to each plasma reactor in the aforementioned claim, its applying plasma entrance has inwall, and it has the converging portion adjacent with plasmatorch, and with entering oral inner surface adjacent diffuser.
7. according to each plasma reactor in the aforementioned claim, comprise being positioned at relative with the plasma entrance device that is used for towards the first and second gas access directing plasma logistics.
8. according to claim 7 plasma reactor, wherein guiding device comprises main body, it is used for being directed to plasma stream in main body and entering conicylindrical passage between the oral inner surface.
9. according to claim 8 plasma reactor, wherein main body is formed by ceramic material.
10. comprise for the device that produces gas blanket at the main body outer surface according to claim 8 or 9 plasma reactor.
11. plasma reactor according to claim 10, wherein gas blanket comprise for the reactant of the component reaction of the gas stream that enters reactor by one of gas access.
12. each plasma reactor according to claim 8-11 comprises the device for the cools body outer surface.
13. plasma reactor according to claim 12, wherein the main body cooling device is configured to main body water is provided.
14. according to each plasma reactor in the aforementioned claim, wherein reative cell comprises circumferential body and provides the device of gas in order to suppress deposit accumulation thereon to the inner surface of circumferential body.
CN201210392266.6A 2007-07-19 2008-07-14 Plasma reactor Expired - Fee Related CN103021779B (en)

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CN200880025328.1A CN101755322B (en) 2007-07-19 2008-07-14 Plasma reactor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113371679A (en) * 2021-05-27 2021-09-10 中国矿业大学 Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102125818B (en) * 2010-12-31 2013-12-11 武汉凯迪工程技术研究总院有限公司 Method and device for preparing high-temperature active particle-rich water vapor by plasma
GB2493752A (en) 2011-08-17 2013-02-20 Edwards Ltd Apparatus for treating a gas stream
US9240308B2 (en) * 2014-03-06 2016-01-19 Applied Materials, Inc. Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
GB2534890A (en) * 2015-02-03 2016-08-10 Edwards Ltd Thermal plasma torch
GB2536905B (en) * 2015-03-30 2020-01-08 Edwards Ltd Radiant burner
GB2625846A (en) * 2022-12-27 2024-07-03 Csk Inc Scrubber burner
CN118692887B (en) * 2024-08-22 2024-12-17 巨玻固能(苏州)薄膜材料有限公司 Ionization device for nitrogen and coating equipment

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846275A (en) * 1996-12-31 1998-12-08 Atmi Ecosys Corporation Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system
TW442842B (en) * 1996-12-31 2001-06-23 Atmi Ecosys Corp Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases
US6617538B1 (en) * 2000-03-31 2003-09-09 Imad Mahawili Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements
JP2005205330A (en) 2004-01-23 2005-08-04 Kanken Techno Co Ltd Plasma decomposition method of perfluoro compound exhaust gas, plasma decomposition apparatus using the method, and exhaust gas treating system mounted with the apparatus
GB0416385D0 (en) * 2004-07-22 2004-08-25 Boc Group Plc Gas abatement
GB0502495D0 (en) * 2005-02-07 2005-03-16 Boc Group Plc Ejector pump

Cited By (1)

* Cited by examiner, † Cited by third party
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CN113371679A (en) * 2021-05-27 2021-09-10 中国矿业大学 Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method

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