CN103017946B - A MEMS piezoresistive multi-axis force sensor and its preparation method - Google Patents
A MEMS piezoresistive multi-axis force sensor and its preparation method Download PDFInfo
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- CN103017946B CN103017946B CN201210518572.XA CN201210518572A CN103017946B CN 103017946 B CN103017946 B CN 103017946B CN 201210518572 A CN201210518572 A CN 201210518572A CN 103017946 B CN103017946 B CN 103017946B
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- 238000002360 preparation method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 238000002513 implantation Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000005452 bending Methods 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005662 electromechanics Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention discloses a micro-electromechanical system (MEMS) piezoresistive multi-axis force sensor and a production method thereof. The MEMS piezoresistive multi-axis force sensor comprises a substrate, a cantilever beam and a piezoresistive strip, wherein one end of the cantilever beam is fixed on the substrate through an anchor point, the other end of the cantilever beam is suspended in the air, and the integrated piezoresistive strip is arranged on the vertical surface and the parallel surface of the cantilever beam. According to the MEMS piezoresistive multi-axis force sensor, the integrated piezoresistive strip is produced in a slanting injection method and is simultaneously arranged on the vertical surface and the parallel surface of the cantilever beam, accordingly when a certain tiny action force is exerted, the cantilever beam is transversely and vertically sensitively bent, and the resistance change during bending indirectly reflects the conditions of the tiny action force in the vertical direction and the horizontal direction. Therefore, the MEMS piezoresistive multi-axis force sensor can measure the multi-directional tiny action force accurately in the condition of small system volume, is small in volume and high in sensitivity, and has wide application prospect in the industries such as automobiles, electrons, household appliances and the machine electricity and the military field.
Description
Technical field
The present invention relates to semiconductor fabrication, be specifically related to a kind of MEMS (micro electro mechanical system) (Micro-Electro-MechanicalSystems) MEMS pressure resistance type multi-axis force transducer and preparation method thereof.
Background technology
Research and development to multi-axis force transducer start from early 1980s, are second micro mechanical sensors coming into the market after micropressure sensor.As the core devices of minitype inertial combination metering system, multi-axis force transducer is the micro device that can simultaneously measure mutually orthogonal a plurality of axial forces.MEMS multi-axis force transducer is the forward position hi-tech of having applied MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems) MEMS that multiple subject crossing merges and have strategic importance, because MEMS multi-axis force transducer has microminiaturized advantage, in the industries such as automobile, electronics, household electrical appliances, electromechanics and military field, having very wide application prospect, is one of following leading industry.
MEMS twin shaft of the prior art or triaxial force sensor can be divided into two classes from structure forms: a class is to realize and measure 2 or 3 axial acceleration at same silicon chip, the simplest way is on same silicon chip, to make independently responsive meta structure of 2 or 3, then is equipped with corresponding testing circuit; Another kind of is that the sensor quadrature of 2 or 3 single-degree-of-freedoms is placed, then is packaged together, and this only actually is the composite module of Miniature dual-shaft or triaxial force sensor.This multi-axis force transducer is just combined the sensor of single-degree-of-freedom simply, and not only volume is large, and precision is low.Although, also occurred adopting a responsive meta structure to realize the multi-axis force transducer that force vector is measured, yet this sensor is difficult to solve the cross-couplings between each axle.
Summary of the invention
For the deficiencies in the prior art set forth above, the invention provides a kind of MEMS pressure resistance type multi-axis force transducer and preparation method thereof, sensor production technique of the present invention is advanced, highly sensitive, volume is relatively little, monolithic integrated micro-mechano electric system (Micro-Electro-Mechanical Systems) MEMS multi-axis force transducer, improves the measuring-signal stability of sensor in use procedure and measures reliability.
One object of the present invention is to provide a kind of MEMS pressure resistance type multi-axis force transducer.
MEMS pressure resistance type multi-axis force transducer of the present invention comprises: substrate, semi-girder and pressure drag bar; Wherein, one end of semi-girder is fixed on substrate by anchor point, and the other end is unsettled; The method that pressure drag strip adoption tiltedly injects is formed on the vertical plane and parallel surface of semi-girder, the pressure drag bar being integrated.
In order to make semi-girder and bottom fix more firmly, increase the area of anchor point, the floorage of anchor point is rectangle, and long limit is vertical with unsettled one end of semi-girder, thus the horizontal cross-section of semi-girder is T shape.This structure has increased the floorage of anchor point, thereby makes the fixing more stable of semi-girder and substrate.
The material of substrate adopts semiconductor material.The ion tiltedly injecting adopts trivalent ion.
MEMS pressure resistance type multi-axis force transducer of the present invention, adopt the method for tiltedly injecting, with the vertical plane of semi-girder certain angle that tilts, vertical plane at semi-girder carries out Implantation, prepare pressure drag bar, vertical plane and surface level form pressure drag bar simultaneously, thereby form the pressure drag bar of the one that section is leg-of-mutton spatial structure.Vertical plane and parallel surface at semi-girder are provided with pressure drag bar, thus the pressure of detection of vertical direction and parallel direction simultaneously.And, be of the present inventionly arranged on the vertical plane of semi-girder and the pressure drag bar of parallel surface is as a whole, simple in structure, easy to prepare, and precision is higher.
Because the relevant maximum stress value of each xsect is along with forming linear change to free-ended distance, pressure drag bar should be placed on the surface of semi-girder and near stiff end.
Tiltedly injection is 20 °～45 ° with the angle of the inclination of the vertical plane of semi-girder.
Further, MEMS pressure resistance type multi-axis force transducer of the present invention connects external circuits, the pressure drag bar on semi-girder and reference resistance is linked to be to simple Hui Sitong resistance bridge, and connects signal processing circuit.
There is certain relation with the size that is applied to the micro-power on semi-girder in the variation of the resistance value of the pressure drag bar on semi-girder.Semi-girder be subject to the effect of external force can along continuous straight runs and vertical direction bend, when crooked, the variation of resistance value has reflected the micro-acting force situation that comes from horizontal direction and vertical direction.By the pressure drag bar and the reference resistance that detect on semi-girder are linked to be to simple Hui Sitong resistance bridge, and just can obtain the situation of change of resistance through signal processing circuit, thereby indirect calculation goes out the size of micro-acting force on semi-girder.
Another object of the present invention is to provide a kind of preparation method of MEMS pressure resistance type multi-axis force transducer.
The preparation method of MEMS pressure resistance type multi-axis force transducer of the present invention, comprises the following steps:
1) provide semi-conductive substrate;
2) adopt MEMS technology machined cantilever beam;
3) with the vertical plane of semi-girder certain angle that tilts, at the vertical plane of semi-girder, carry out Implantation, prepare pressure drag bar;
4) by semi-girder, by anchor point, the method with bonding is fixed on substrate, completes the preparation of MEMS pressure resistance type multi-axis force transducer.
Wherein, in step 3), the angle of the inclination of the vertical plane of Implantation and semi-girder is 20 °～45 °.
Beneficial effect of the present invention:
MEMS pressure resistance type multi-axis force transducer of the present invention, owing to adopting the method for tiltedly injecting, prepare pressure drag bar, vertical plane and surface level at semi-girder are prepared shape all-in-one-piece pressure drag bar simultaneously, make when applying certain micro-acting force, semi-girder is crooked by horizontal and vertical sensitivity, and when crooked, the variation of resistance value has reflected the situation of the micro-acting force that comes from vertical direction and horizontal direction indirectly.Thereby in the situation that system bulk is smaller, can measure more accurate multidirectional micro-acting force, be relatively little, the highly sensitive sensor of a kind of volume, in the industries such as automobile, electronics, household electrical appliances, electromechanics and military field, have very wide application prospect.
Accompanying drawing explanation
Fig. 1 is the structural representation of MEMS pressure resistance type multi-axis force transducer of the present invention;
Fig. 2 is the sectional view along the semi-girder of A-A ' line in Fig. 1 (a).
Embodiment
Below in conjunction with accompanying drawing, by embodiment, further set forth the present invention.
As shown in Figure 1, MEMS pressure resistance type multi-axis force transducer of the present invention comprises: substrate 1, semi-girder 2 and pressure drag bar 3; One end of semi-girder 2 is bonded on substrate 1 by anchor point 21.
In the present embodiment, the anchor point of semi-girder is vertical with unsettled one end, and the horizontal cross-section of semi-girder is T font.
Adopt the method for tiltedly injecting, with the angle of the inclination of the vertical plane of semi-girder be 30 °.The section of pressure drag bar 3 is triangle, as shown in Figure 2.
The preparation method of MEMS pressure resistance type multi-axis force transducer of the present invention:
1) providing material is the substrate of silicon;
2) adopt MEMS technology machined cantilever beam, the horizontal cross-section of semi-girder is T font;
3) angle tilting with the vertical plane of semi-girder is 30 °, at the vertical plane of semi-girder, carries out Ge+ implantation, prepares pressure drag bar;
4) by semi-girder, by anchor point, the method with bonding is fixed on substrate, completes the preparation of MEMS pressure resistance type multi-axis force transducer.
Finally it should be noted that: although this instructions is described design parameter of the present invention and structure in detail by specific embodiment; but it should be appreciated by those skilled in the art; implementation of the present invention is not limited to the description scope of embodiment; within not departing from essence of the present invention and spiritual scope; can carry out various modifications and replacement to the present invention, so protection scope of the present invention defines depending on claim scope.
Claims (9)
1. a MEMS pressure resistance type multi-axis force transducer, is characterized in that, described multi-axis force transducer comprises: substrate (1), semi-girder (2) and pressure drag bar (3); Wherein, one end of described semi-girder (2) is fixed on described substrate (1) by anchor point (21), and the other end is unsettled; Described pressure drag bar (3) adopts the method for tiltedly injecting to be formed on the vertical plane and parallel surface of described semi-girder (2), the pressure drag bar (3) being integrated.
2. multi-axis force transducer as claimed in claim 1, is characterized in that, the material of described substrate (1) adopts semiconductor material.
3. multi-axis force transducer as claimed in claim 1, is characterized in that, the method for described oblique injection is vertical plane with semi-girder certain angle that tilts, and at the vertical plane of semi-girder, carries out Implantation, and ion adopts trivalent ion.
4. multi-axis force transducer as claimed in claim 1, is characterized in that, tiltedly injection is 20 °～45 ° with the angle of the inclination of the vertical plane of described semi-girder (2).
5. multi-axis force transducer as claimed in claim 1, is characterized in that, the horizontal cross-section of described semi-girder (2) is T shape.
6. multi-axis force transducer as claimed in claim 5, is characterized in that, described multi-axis force transducer connects external circuits, the pressure drag bar (3) on described semi-girder (2) and reference resistance is linked to be to simple Hui Sitong resistance bridge, and connects signal processing circuit.
7. multi-axis force transducer as claimed in claim 1, is characterized in that, described pressure drag bar is placed on surface the close stiff end of semi-girder.
8. a preparation method for MEMS pressure resistance type multi-axis force transducer claimed in claim 1, is characterized in that, described method, comprises the following steps:
1) provide semi-conductive substrate;
2) adopt MEMS technology machined cantilever beam;
3) with the vertical plane of semi-girder certain angle that tilts, at the vertical plane of semi-girder, carry out Implantation, prepare pressure drag bar;
4) by semi-girder, by anchor point, the method with bonding is fixed on substrate, completes the preparation of MEMS pressure resistance type multi-axis force transducer.
9. preparation method as claimed in claim 8, is characterized in that, in step 3), the angle of the inclination of the vertical plane of Implantation and semi-girder is 20 °～45 °.
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| CN201210518572.XA CN103017946B (en) | 2012-12-05 | 2012-12-05 | A MEMS piezoresistive multi-axis force sensor and its preparation method |
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| CN103303862B (en) * | 2013-06-14 | 2015-10-07 | 中国科学院半导体研究所 | Based on the preparation method of the highly sensitive biochemical sensor of resonance type micro-cantilever structure |
| CN106644259A (en) * | 2016-12-26 | 2017-05-10 | 哈尔滨工业大学 | Posture influenced compensation method for cantilever beam type sensor |
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| US6720267B1 (en) * | 2003-03-19 | 2004-04-13 | United Microelectronics Corp. | Method for forming a cantilever beam model micro-electromechanical system |
| CN201083760Y (en) * | 2007-10-19 | 2008-07-09 | 中国电子科技集团公司第十三研究所 | Three axis integrated piezoresistance type acceleration sensor |
| CN101251426A (en) * | 2007-12-28 | 2008-08-27 | 中国科学院上海微系统与信息技术研究所 | Piezoresistive structure and detection method of MOS capacitor substrate on nanobeam |
| CN102768291A (en) * | 2012-07-21 | 2012-11-07 | 中北大学 | Piezoresistive monolithic integrated four-beam tri-axial accelerometer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10142089A (en) * | 1996-11-08 | 1998-05-29 | Copal Electron Co Ltd | Piezo resistance pressure device |
| WO2004059306A1 (en) * | 2002-12-27 | 2004-07-15 | Cantion A/S | A cantilever sensor using both the longitudinal and the transversal piezoresistive coefficients |
| CN2630796Y (en) * | 2003-07-06 | 2004-08-04 | 中国科学院合肥智能机械研究所 | Silicon micromechanical inclination angle sensor |
| US7381582B2 (en) * | 2005-10-31 | 2008-06-03 | Honeywell International Inc. | Method and structure of ion implanted elements for the optimization of resistance |
| CN102331513A (en) * | 2011-06-16 | 2012-01-25 | 沈阳工业大学 | An Ultrathin Sensitive Beam Piezoresistive Acceleration Sensor |
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Patent Citations (4)
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|---|---|---|---|---|
| US6720267B1 (en) * | 2003-03-19 | 2004-04-13 | United Microelectronics Corp. | Method for forming a cantilever beam model micro-electromechanical system |
| CN201083760Y (en) * | 2007-10-19 | 2008-07-09 | 中国电子科技集团公司第十三研究所 | Three axis integrated piezoresistance type acceleration sensor |
| CN101251426A (en) * | 2007-12-28 | 2008-08-27 | 中国科学院上海微系统与信息技术研究所 | Piezoresistive structure and detection method of MOS capacitor substrate on nanobeam |
| CN102768291A (en) * | 2012-07-21 | 2012-11-07 | 中北大学 | Piezoresistive monolithic integrated four-beam tri-axial accelerometer |
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| 李烨等.微机电系统（MEMS）硅压阻式压力传感器分析研究.《真空》.2011,第48卷(第6期),72-75. * |
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