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CN103014844A - Tellurium-cadmium-mercury vertical liquid-phase extension sample holder - Google Patents

Tellurium-cadmium-mercury vertical liquid-phase extension sample holder Download PDF

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Publication number
CN103014844A
CN103014844A CN2012105061445A CN201210506144A CN103014844A CN 103014844 A CN103014844 A CN 103014844A CN 2012105061445 A CN2012105061445 A CN 2012105061445A CN 201210506144 A CN201210506144 A CN 201210506144A CN 103014844 A CN103014844 A CN 103014844A
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Prior art keywords
sample holder
substrate
fixture
plane
main body
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Inventor
孙权志
魏彦锋
杨建荣
孙瑞贇
仇光寅
陈倩男
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

本发明公开了一种碲镉汞垂直液相外延样品架。它是在样品架平面上,存在顶端和左右两侧三条闭合的覆盖压条,以及底端固定夹具。三条覆盖压条和夹具都有与样品架平面成45度的斜面,与衬底边缘接触。夹具通过紧固螺丝固定在样品架平面上。该样品架适用于碲镉汞垂直液相外延生长,衬底夹持固定时,覆盖压条包覆压紧衬底的上部和左右两侧,能从正面就开始阻止外延时母液渗入到衬底背面,夹具压紧衬底底端,覆盖压条和夹具的共同作用能把衬底紧紧地平贴在样品架平面上,减小衬底背面与样品架平面的间隙,阻止外延生长时母液渗入到衬底背面,从而消除外延片背面残留沾液。

Figure 201210506144

The invention discloses a HgCdTe vertical liquid phase epitaxy sample holder. It is on the plane of the sample holder, and there are three closed covering strips on the top, left and right sides, and a fixed fixture at the bottom. The three covering bead and clamps all have slopes at 45 degrees to the plane of the sample holder and contact the edge of the substrate. The fixture is fixed on the plane of the sample holder by fastening screws. This sample holder is suitable for HgCdTe vertical liquid phase epitaxial growth. When the substrate is clamped and fixed, the covering bar covers the upper part and the left and right sides of the substrate, which can prevent the mother liquid from penetrating into the substrate during epitaxy from the front. On the back side, the clamp presses the bottom of the substrate, and the combined action of the covering bar and the clamp can tightly attach the substrate to the plane of the sample holder, reduce the gap between the back of the substrate and the plane of the sample holder, and prevent the mother liquid from penetrating into the substrate during epitaxial growth. The back of the substrate, so as to eliminate the residual liquid on the back of the epitaxial wafer.

Figure 201210506144

Description

The vertical rheotaxy specimen holder of a kind of Te-Cd-Hg
Technical field
This patent relates to a kind of novel specimen holder, is applicable to the vertical rheotaxial growth technique of Te-Cd-Hg, can solve the residual liquid problem of being stained with at the epitaxial wafer back side.
Background technology
Te-Cd-Hg is the adjustable semiconductor material of a kind of band gap, by regulating the component of element cadmium, can cover short-wave infrared to the very wide wave band of very long wave infrared (0.7~30 μ m).As a kind of important infra-red material, Te-Cd-Hg has been made into focal plane device, and the general space remote sensing that is applied to of light plays an important role in aerological sounding, aerospace applications and military detecting field.Cadmium-telluride-mercury infrared detector is present most advanced infrared eye.
The growth of Hg-Cd-Te material, the most ripe method is rheotaxy, can grow material parameter uniform and stable, the epitaxial material of superior performance.What wherein can form extensive mass growth is exactly vertical liquid phase epitaxial technique.The use of specimen holder plays a part sample clamping in vertical liquid phase epitaxial method.At present, being applicable to the specimen holder of the vertical rheotaxial growth of Te-Cd-Hg, generally is simply substrate to be flattened on the specimen holder peripheral planar, and two ends are fixed with clamp up and down.This specimen holder is dipped vertically into growth mother liquid can carry out epitaxy.But, in actual growth technique, because during substrate pre-treatment polishing, can't guarantee that the back side is very smooth, the specimen holder plane also can't guarantee to process very smoothly simultaneously, like this, when substrate back is attached on the specimen holder plane, always there is the slit, when immersing growth mother liquid, mother liquor can creep into the slit, thereby solidifies at substrate back and produce the residual liquid of being stained with.
The residual liquid of being stained with mainly contains three disadvantageous effects for the rheotaxial growth technique of Te-Cd-Hg: (1) is because residual existence of being stained with liquid, cause epitaxial wafer to be combined closely with the specimen holder plane, can't take off, can cause the epitaxial wafer sliver if take off by force, can reduce the epitaxial wafer useful area even full wafer is scrapped; (2) cause can't transmitted infrared light in residual existence of being stained with liquid, can't characterize with the quality of infrared transmission spectra to epitaxial wafer; (3) residual removal of being stained with liquid needs the complicated etch polishing technology of a cover, use in a large number manpower and materials.
Summary of the invention
Be stained with the liquid problem for the epitaxial wafer back side that overcomes in the vertical liquid phase epitaxial method of Te-Cd-Hg, this patent provides a kind of novel specimen holder, and this specimen holder is the growing epitaxial thin-film material in batches, can also solve the epitaxial wafer back side and be stained with the liquid problem, enhances productivity.
The technical scheme that its technical problem that solves this patent adopts is: design and produce novel specimen holder, this specimen holder so all component adopt high purity graphite, prevents from polluting growing environment because will be applied to the Te-Cd-Hg semiconductor material growing system.This specimen holder mainly is three parts: specimen holder main body, anchor clamps and fastening screw.
The body profile of described specimen holder main body 1 is rectangular parallelepiped, be of a size of 36mm * 36mm * 73mm, on the side of four 36mm * 73mm, all be designed to such structure: at 36mm minor face place, top and two 73mm long edge positions have three to cover press strips, it is the flat rectangular parallelepiped that is of a size of 40mm * 12mm * 2mm that the top covers press strip, upper surface and the specimen holder top upper surface of this press strip rectangular parallelepiped 40mm * 2mm are same planes, the mid point of contact edge overlaps, be processed to the inclined-plane in the middle of the lower surface, this inclined-plane and specimen holder side angle are 45 degree, and length is 32mm; It is to be symmetrically distributed in the both sides, side that both sides cover press strip, be of a size of 39mm * 6mm * 2mm, the end face of top 6mm * 2mm is connected with press strip bottom surface, top, and, the outer side of the outer side of 39mm * 2mm and top press strip 12mm * 6mm is same plane, medial surface is processed to the inclined-plane, and inclined-plane and specimen holder side angle are 45 degree, and length is 39mm; In bottom, specimen holder side, apart from the central authorities at 36mm minor face 11mm place, bottom, the standard female hole of the M4 that a degree of depth is arranged is 5mm;
Described anchor clamps 2 are the prolate cube structure, are of a size of 14mm * 15mm * 2mm, have the rectangular groove that runs through at the face of 14mm * 15mm, and this groove is parallel with the long limit of 15mm, and width is 4.4mm, and length is 10mm, and wherein two ends are the semicircle of radius 2.2mm; The end face of a 15mm * 2mm therein, there are two projections rectangular, rectangular 3mm * 4mm * the 2mm that is of a size of, lay respectively at anchor clamps end face both sides, wherein, the rectangular bottom surface of 3mm * 2mm is to overlap with the anchor clamps end face, and the rectangular side of 4mm * 2mm and the anchor clamps side of 14mm * 2mm are same planes, rectangular end face is processed to the inclined-plane, and the angle of inclined-plane and rectangular adjacent 3mm * 4mm face is 45 degree;
The screw thread of described fastening screw 3 is the outside screw of M4, and spiro rod length 6mm, the diameter of nut are Φ 5.6, and nut thickness is 2mm, and it is 1.5mm that there is width at nut end face middle part along diametric(al), and the degree of depth is 1mm, the groove that length direction runs through;
Four anchor clamps 2 are close to four sides of specimen holder main body 1 respectively, outstanding rectangular inclined-plane is towards specimen holder main body 1 side, and become 45 degree with the side angle, rectangular groove is covered in directly over the threaded hole, anchor clamps 2 bottom surfaces are parallel with specimen holder main body 1 bottom surface, then, the rectangular groove that fastening screw 3 passes anchor clamps 2 is screwed into the side internal thread hole, consists of the vertical rheotaxy specimen holder of whole Te-Cd-Hg.
Adopt such specimen holder, after having loaded substrate, the rectangular substrate base is clamped and is close on the specimen holder plane by anchor clamps 2, and without producing in conjunction with the slit, mother liquor is difficult to infilter; Other three limits cover press strip with three limits respectively and contact, and the place of contact is the top surface edge of substrate, rather than lower surface edge, and mother liquor contacts with upper surface, is difficult to penetrate into lower surface.Thereby when growth, mother liquor can't enter substrate back, does not exist so the epitaxial wafer back side does not have the residual liquid of being stained with.
The beneficial effect of this patent is, can not produce the residual liquid of being stained with in the epitaxial wafer back side in the mercury cadmium telluride rheotaxial sheet of growing in batches, greatly improves yield rate, enhances productivity.
Description of drawings
Below in conjunction with drawings and Examples this patent is further specified.
Fig. 1 is the specimen holder structural representation of this patent.
Fig. 2 is the schematic three dimensional views of this specimen holder.
Fig. 3 is the embodiment schematic three dimensional views of this specimen holder clamp substrate.
1. specimen holder main bodys among the figure, 2. anchor clamps, 3. fastening screw, 4. press strip groove, 5. clip groove, 6. covering press strip, 7. substrate.
Embodiment
In Fig. 1, mainly contain 3 parts: specimen holder main body 1, anchor clamps 2 and fastening screw 3.Fastening screw 3 is fixed on anchor clamps 2 on the specimen holder main body 1.Specimen holder main body 1 has four orthogonal planes, is used for smooth substrate 7, and substrate 7 usefulness anchor clamps 2 and fastening screw 3 are fixed on the specimen holder.
In the schematic three dimensional views of Fig. 2, can know the profile structure of seeing specimen holder.Specimen holder has four orthogonal planes, and being used for 7, epitaxys of smooth 4 substrates can output 4 sheet epitaxy sheet, realizes mass production, thereby realizes the beneficial effect of this patent.Exert pressure to substrate 7 bottoms by anchor clamps 2 and to clamp substrate 7,3 stationary fixtures 2 of fastening screw.Be the semicircular rectangular groove in two in the middle of the anchor clamps 2, its position with respect to fastening screw 3 is not fixed, and can move up and down certain distance, like this, can realize the clamping of different lengths substrate 7, widens the usage range of this specimen holder.
Fig. 3 is the schematic three dimensional views of embodiment, can be clear that substrate 7 is clamped on the specimen holder.During use, first fastening screw 3 and anchor clamps 2 are taken off, substrate 7 is flattened on the plane of specimen holder main body 1 side, and tightly fill in the covering press strip 6, then in place anchor clamps 2 and fastening screw 3, at this moment outstanding rectangular inclined-plane, the upper end of anchor clamps 2 and the side of specimen holder main body 1 become miter angle, and rectangular groove is covered in directly over the internal thread hole of side fully, fastening screw 3 passes the rectangular groove of anchor clamps 2, is tightened in the internal thread hole a little.Then anchor clamps 2 are up pressed a little with strength, prop up substrate 7, at last fastening screw 3 is tightened.Like this, just finished gripping of substrate 7.Because three existence that cover press strips 6, mother liquor is blocked in the process that enters substrate 7 back sides, just can't enter also the overleaf residual liquid of being stained with, thus the beneficial effect of realization this patent.The base of substrate 7 is compressed by anchor clamps 2, the capped press strip 6 in other 3 limits is tightly pushed down simultaneously, and namely substrate 7 can be fixed between press strip groove 4 and the clip groove 5, thereby can tightly touch with the specimen holder plane, also stop mother liquor to enter substrate 7 back sides residual, realized the beneficial effect of this patent.After specimen holder has loaded substrate 7 as shown in Figure 3, can enter epitaxial system and carry out rheotaxial growth.

Claims (1)

1.一种碲镉汞垂直液相外延样品架,它由样品架主体(1)、夹具(2)和紧固螺丝(3)构成,其特征在于:1. A HgCdTe vertical liquid phase epitaxy sample holder, which is composed of a sample holder main body (1), clamps (2) and fastening screws (3), characterized in that: 所述的样品架主体(1)的主体轮廓是长方体,尺寸为36mm×36mm×73mm,在四个36mm×73mm的侧面上均设计成这样的结构:在顶端36mm短边处及两条73mm长边处有三条覆盖压条,顶端覆盖压条是尺寸为40mm×12mm×2mm的扁长方体,该压条长方体40mm×2mm的上端面与样品架顶端上表面是同一平面,接触边的中点是重合的,下端面中间被加工成斜面,该斜面与样品架侧面夹角为45度,长度为32mm;两侧覆盖压条是对称分布于侧面两侧,尺寸为39mm×6mm×2mm,上部6mm×2mm的端面与顶端压条底面连接,并且,39mm×2mm的外侧面与顶端压条12mm×6mm的外侧面是同一平面,内侧面被加工成斜面,斜面与样品架侧面夹角为45度,长度为39mm;在样品架侧面底端,距离底端36mm短边11mm处的中央,有一个深度为5mm的M4的标准内螺纹孔;The outline of the main body of the sample holder (1) is a cuboid with a size of 36mm×36mm×73mm, and the four sides of 36mm×73mm are designed to have such a structure: the top 36mm short side and two 73mm long sides There are three covering bead at the side, and the top covering bead is a flat cuboid with a size of 40mm×12mm×2mm. The upper end surface of the bead cuboid of 40mm×2mm is the same plane as the upper surface of the top of the sample holder, and the midpoint of the contact edge is coincident. The middle of the lower end surface is processed into a bevel, the angle between the bevel and the side of the sample holder is 45 degrees, and the length is 32mm; the covering strips on both sides are symmetrically distributed on both sides of the side, the size is 39mm×6mm×2mm, and the upper end surface is 6mm×2mm It is connected to the bottom surface of the top bead, and the outer surface of 39mm×2mm is the same plane as the outer surface of the top bead 12mm×6mm, and the inner surface is processed into a bevel, the angle between the bevel and the side of the sample holder is 45 degrees, and the length is 39mm; At the bottom of the side of the sample holder, there is a standard M4 internal thread hole with a depth of 5mm in the center of the short side 11mm away from the bottom 36mm; 所述的夹具(2)为扁长方体结构,尺寸为14mm×15mm×2mm,在14mm×15mm的面上开有贯穿的长条槽,该槽与15mm长边平行,宽度为4.4mm,长度为10mm,其中两端为半径2.2mm的半圆;在其中一个15mm×2mm的顶面,有两条突起长条,长条尺寸为3mm×4mm×2mm,分别位于夹具顶面两侧,其中,3mm×2mm的长条底面是和夹具顶面重合,4mm×2mm的长条侧面和14mm×2mm的夹具侧面是同一平面,长条顶面被加工成斜面,斜面与长条相邻3mm×4mm面的夹角为45度;The fixture (2) is a flat cuboid structure with a size of 14mm x 15mm x 2mm. There is a long slot running through the surface of 14mm x 15mm. The slot is parallel to the long side of 15mm, the width is 4.4mm, and the length is 10mm, the two ends of which are semicircles with a radius of 2.2mm; on one of the top surfaces of 15mm×2mm, there are two protruding strips with a size of 3mm×4mm×2mm, which are respectively located on both sides of the top surface of the fixture, of which 3mm The bottom surface of the strip of ×2mm coincides with the top surface of the fixture, the side of the strip of 4mm×2mm and the side of the fixture of 14mm×2mm are the same plane, the top surface of the strip is processed into a slope, and the slope is adjacent to the strip of 3mm×4mm The included angle is 45 degrees; 所述的紧固螺丝(3)的螺纹为M4的外螺纹,螺杆长度6mm,螺帽的直径为Φ5.6,螺帽厚度为2mm,螺帽顶面中部沿直径方向有宽度为1.5mm,深度为1mm,长度方向贯穿的槽;The thread of the fastening screw (3) is an M4 external thread, the length of the screw is 6mm, the diameter of the nut is Φ5.6, the thickness of the nut is 2mm, and the width of the middle part of the top surface of the nut is 1.5mm along the diameter direction. Grooves with a depth of 1mm and running through the length direction; 四个夹具(2)分别和样品架主体(1)的四个侧面紧贴,突出长条的斜面是面向样品架主体(1)侧面的,并与侧面夹角成45度,长条槽覆盖于螺纹孔正上方,夹具(2)底面和样品架主体(1)底面平行,然后,紧固螺丝(3)穿过夹具(2)的长条槽拧进侧面内螺纹孔,构成整个碲镉汞垂直液相外延样品架。The four clamps (2) are respectively attached to the four sides of the main body of the sample holder (1). The slope of the protruding strip faces the side of the main body of the sample holder (1) and forms an angle of 45 degrees with the side. The long groove covers the Right above the threaded hole, the bottom surface of the fixture (2) is parallel to the bottom surface of the sample holder main body (1), and then the fastening screw (3) is screwed into the side internal threaded hole through the long slot of the fixture (2) to form the entire CdTe Mercury vertical liquid phase epitaxy sample holder.
CN2012105061445A 2012-11-30 2012-11-30 Tellurium-cadmium-mercury vertical liquid-phase extension sample holder Pending CN103014844A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103849929A (en) * 2014-01-17 2014-06-11 中国科学院上海技术物理研究所 Sample holder for immersion type tellurium-cadmium-mercury rheotaxy
CN112160024A (en) * 2020-09-02 2021-01-01 中国电子科技集团公司第十一研究所 Graphite boat for multi-sheet type film vertical liquid phase epitaxy, growth device and growth method
CN112251814A (en) * 2020-09-02 2021-01-22 中国电子科技集团公司第十一研究所 Multi-piece substrate boat loading mold, multi-piece substrate loading device and method
CN113897667A (en) * 2021-09-28 2022-01-07 北京科技大学 A kind of equipment and method for growing bismuth-tellurium-based alloy epitaxial thin film
CN114481304A (en) * 2020-10-26 2022-05-13 昆明物理研究所 Graphite boat for vertical liquid phase epitaxy tellurium cadmium mercury film for reducing surface defects and application
CN115458630A (en) * 2022-09-14 2022-12-09 中国电子科技集团公司第十一研究所 A device for corrosion process of cadmium zinc telluride substrate

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US3648653A (en) * 1970-06-01 1972-03-14 Bell Telephone Labor Inc Liquid phase crystal growth apparatus
US4033291A (en) * 1973-03-09 1977-07-05 Tokyo Shibaura Electric Co., Ltd. Apparatus for liquid-phase epitaxial growth
JPS554947A (en) * 1978-06-28 1980-01-14 Fujitsu Ltd Method of growing liquid phase epitaxial
JPS60113925A (en) * 1983-11-26 1985-06-20 Mitsubishi Electric Corp Liquid phase epitaxial growth device
EP0810306A2 (en) * 1996-05-31 1997-12-03 Kabushiki Kaisha Toshiba Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648653A (en) * 1970-06-01 1972-03-14 Bell Telephone Labor Inc Liquid phase crystal growth apparatus
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EP0810306A2 (en) * 1996-05-31 1997-12-03 Kabushiki Kaisha Toshiba Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103849929A (en) * 2014-01-17 2014-06-11 中国科学院上海技术物理研究所 Sample holder for immersion type tellurium-cadmium-mercury rheotaxy
CN112160024A (en) * 2020-09-02 2021-01-01 中国电子科技集团公司第十一研究所 Graphite boat for multi-sheet type film vertical liquid phase epitaxy, growth device and growth method
CN112251814A (en) * 2020-09-02 2021-01-22 中国电子科技集团公司第十一研究所 Multi-piece substrate boat loading mold, multi-piece substrate loading device and method
CN112251814B (en) * 2020-09-02 2021-12-17 中国电子科技集团公司第十一研究所 Multi-piece substrate boat loading mold, multi-piece substrate loading device and method
CN112160024B (en) * 2020-09-02 2021-12-17 中国电子科技集团公司第十一研究所 Graphite boat for multi-sheet type film vertical liquid phase epitaxy, growth device and growth method
CN114481304A (en) * 2020-10-26 2022-05-13 昆明物理研究所 Graphite boat for vertical liquid phase epitaxy tellurium cadmium mercury film for reducing surface defects and application
CN113897667A (en) * 2021-09-28 2022-01-07 北京科技大学 A kind of equipment and method for growing bismuth-tellurium-based alloy epitaxial thin film
CN115458630A (en) * 2022-09-14 2022-12-09 中国电子科技集团公司第十一研究所 A device for corrosion process of cadmium zinc telluride substrate

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Application publication date: 20130403