CN103014651A - Thin-film solar cell annealing device, and preparation method of copper indium gallium selenide thin-film cell absorption layer and copper zinc tin sulfide thin-film cell absorption layer - Google Patents

Abstract

A thin-film solar cell annealing device, used for selenizing or vulcanizing a metal thin film prefabricated layer on a substrate, comprising an annealing furnace, a substrate frame and a first heating lamp tube; the annealing furnace is a hollow structure, and its interior is airtight the annealing chamber; the substrate rack is arranged on the side wall of the annealing chamber, and the substrate can be loaded on the substrate rack; one end of the first heating lamp is arranged on the side wall of the annealing chamber , the first heating lamp is located on the side of the substrate provided with the metal thin film prefabricated layer, the first heating lamp is spaced from the substrate, and the first heating lamp is connected to the base The plane where the film holder is located is parallel, and the first heating lamp tube and the substrate holder can move relative to each other. In the above-mentioned annealing device for thin-film solar cells, the heat emitted by the first heating lamp is directly radiated to the surface of the substrate, which increases its rapid temperature-raising capability. At the same time, it also provides the preparation method of the copper indium gallium selenium thin film battery and the copper zinc tin sulfur thin film battery absorption layer.

Description

Thin film solar cell annealing device, copper indium gallium selenium thin film battery and method for preparing absorbing layer of copper zinc tin sulfur thin film battery

technical field

The invention relates to thin-film solar cell preparation technology, in particular to a thin-film solar cell annealing device, a copper indium gallium selenium thin film cell and a method for preparing an absorbing layer of a copper zinc tin sulfur thin film cell. the

Background technique

Thin film solar cells include copper indium gallium selenide thin film batteries and copper zinc tin sulfur thin film batteries. Copper indium gallium selenide thin-film battery is a new type of green energy with both high efficiency and low cost advantages, and its photovoltaic conversion efficiency has exceeded 20% in the laboratory. Compared with existing silicon-based photovoltaic solar cells, mass production of copper indium gallium selenide thin film cells will bring greater cost advantages. the

Copper-zinc-tin-sulfur thin-film battery is a new energy source with great potential under research. Its advantage is that various elements required for raw materials have high earth mineral abundance and are easy to obtain, so the cost can be further reduced. the

The key process for manufacturing CIGS thin-film batteries is to prepare CIGS light-absorbing layer. In large-scale production, sputtering method is generally used. The specific method of a sputtering method includes: firstly adopting the magnetron sputtering method to prepare a metal thin film prefabricated layer, respectively alternately sputtering multiple times to obtain multilayer copper, indium, and gallium, and then vapor-depositing a metal thin film prefabricated layer on the metal thin film prefabricated layer. layer selenium to obtain a substrate, and then perform high-temperature annealing on the substrate to form a copper indium gallium selenide thin film. The selenization process requires a relatively high temperature to ensure that the crystal quality of the copper indium gallium selenide thin film is relatively good, and the crystal particles are relatively large. the

Similar to the manufacture of copper indium gallium selenide thin film batteries, copper zinc tin sulfur thin film batteries also need to evaporate a layer of sulfur on the metal thin film prefabricated layer to obtain a substrate, and then perform high temperature annealing on the substrate to form a copper zinc tin sulfur thin film. the

In the traditional thin-film solar cell annealing device, the substrate to be selenized or vulcanized is placed in a graphite box, and a plurality of heating lamps are distributed on the outer surface of the graphite box. However, since the heat needs to be transferred to the substrate through the graphite box, the temperature-raising capability of the entire thin-film solar cell annealing device is insufficient, resulting in low annealing efficiency. the

Contents of the invention

Based on this, it is necessary to provide an annealing device for thin-film solar cells with strong rapid heating capability. the

An annealing device for a thin film solar cell, used for selenizing or vulcanizing a metal thin film prefabricated layer on a substrate, comprising:

The annealing furnace is a hollow structure with a closed annealing chamber inside;

A substrate frame is arranged on the side wall of the annealing chamber, and the substrate can be loaded on the substrate frame;

A first heating lamp tube, one end of which is arranged on the side wall of the annealing chamber, the first heating lamp tube is located on the side where the metal thin film prefabricated layer is provided on the substrate, the first heating lamp tube is connected to the said annealing chamber The substrates are spaced apart from each other, and the first heating lamp tube is parallel to the plane where the substrate holder is located, and the first heating lamp tube and the substrate holder can move relative to each other. the

In one embodiment, the distance between the first heating lamp and the substrate is less than 5 mm. the

In one embodiment, one end of the first heating lamp tube is fixed on the side wall of the annealing chamber; the annealing device for thin film solar cells also includes a horizontal slide rail and a transmission device, and the horizontal slide rail is fixed on the side wall of the annealing chamber. On the side wall of the annealing chamber, the transmission device is slidably arranged in the horizontal slide rail, the substrate holder is arranged on the transmission device, and the transmission device can drive the substrate holder in the horizontal direction sports. the

In one embodiment, the transmission device drives the substrate holder to move on the horizontal slide rail at a speed of 0.3 mm/s. the

In one of the embodiments, the substrate frame is fixed on the side wall of the annealing chamber; the thin-film solar cell annealing device further includes a horizontal slide rail and a transmission device, and the horizontal slide rail is fixed on the side of the annealing chamber On the wall, the transmission device is slidably arranged in the horizontal slide rail, one end of the first heating lamp tube is arranged on the transmission device, and the transmission device can drive the first heating lamp tube to Movement in the horizontal direction. the

In one of the embodiments, it further includes a second heating lamp, one end of which is arranged on the side wall of the annealing chamber, and the second heating lamp is located on the side of the substrate away from the first heating lamp , the second heating lamp tube and the substrate are spaced apart from each other, and the second heating lamp tube is parallel to the plane where the substrate holder is located. the

In one of the embodiments, there are multiple second heating lamp tubes, and the multiple second heating lamp tubes are evenly distributed on the same horizontal plane. the

In one embodiment, the first heating lamp is a halogen lamp with a power of 1kW. the

In the above annealing device for thin-film solar cells, the first heating lamp tube is arranged in the annealing chamber. Compared with the traditional thin-film solar cell annealing device, the first heating lamp tube is closer to the substrate. The heat emitted by the first heating lamp tube is directly radiated to the surface of the substrate, thereby increasing the rapid temperature rise capability of the thin film solar cell annealing device. the

In addition, it is also necessary to provide a method for preparing the absorption layer of the copper indium gallium selenium thin film battery. the

A method for preparing an absorber layer of a copper indium gallium selenide thin film battery, comprising the following steps:

providing a substrate deposited with a back electrode layer;

Depositing a metal thin film prefabricated layer composed of copper, indium and gallium on the back electrode layer by evaporation or sputtering;

Evaporate a layer of selenium on the metal thin film prefabricated layer to obtain a substrate;

Provide the thin-film solar cell annealing device described in any one of claim 1 to claim 7, the substrate is loaded on the substrate frame;

moving the first heating lamp tube and the substrate at a relatively constant speed, and moving the first heating lamp tube from one end to the other end of the side where the metal thin film prefabricated layer is provided on the substrate, so as to The surface of the substrate is uniformly heated, and an absorption layer of a copper indium gallium selenium thin film battery is prepared on the back electrode layer. the

In the method for preparing the absorbing layer of the CIGS thin film battery, the first heating lamp tube is closer to the substrate. The heat emitted by the first heating lamp tube is directly radiated to the surface of the substrate, which meets the requirement of rapid temperature rise in the annealing process. In addition, the relatively uniform motion between the first heating lamp and the substrate frame makes the surface of the substrate evenly heated, and the selenization reaction is also more uniform, and finally the quality of the absorption layer of the copper indium gallium selenium thin film battery is better. the

In addition, it is also necessary to provide a method for preparing the absorption layer of the copper indium gallium selenium thin film battery. the

A method for preparing an absorber layer of a copper-zinc-tin-sulfur thin film battery, comprising the following steps:

providing a substrate deposited with a back electrode layer;

Depositing a metal thin film prefabricated layer composed of copper, zinc and tin on the back electrode layer by evaporation or sputtering;

A layer of sulfur is vapor-deposited on the metal thin film prefabricated layer to obtain a substrate;

Provide the thin-film solar cell annealing device described in any one of claim 1 to claim 7, the substrate is loaded on the substrate frame;

moving the first heating lamp tube and the substrate at a relatively constant speed, and moving the first heating lamp tube from one end to the other end of the side where the metal thin film prefabricated layer is provided on the substrate, so as to The surface of the substrate is uniformly heated, and a copper-zinc-tin-sulfur thin-film battery absorption layer is prepared on the back electrode layer. the

In the method for preparing the absorption layer of the copper-zinc-tin-sulfur thin film battery, the first heating lamp is closer to the substrate. The heat emitted by the first heating lamp tube is directly radiated to the surface of the substrate, which meets the requirement of rapid temperature rise in the annealing process. In addition, the relatively uniform movement between the first heating lamp and the substrate frame makes the surface of the substrate evenly heated, and the vulcanization reaction is also more uniform, and finally the quality of the absorbing layer of the copper-zinc-tin-sulfur thin film battery is better. the

Description of drawings

Fig. 1 is the structural diagram of the thin-film solar cell annealing device of preferred embodiment of the present invention;

Fig. 2 is a structural diagram of another angle of the thin-film solar cell annealing device shown in Fig. 1;

Fig. 3 is the structural diagram of the thin-film solar cell annealing device of another embodiment;

Fig. 4 is the structural diagram of the thin-film solar cell annealing device of another embodiment;

Fig. 5 is the flowchart of the preparation method of the absorption layer of copper indium gallium selenium thin film battery of preferred embodiment of the present invention;

Fig. 6 is the structural diagram of the substrate of an embodiment;

Fig. 7 is the specific structural diagram of the copper indium gallium selenium thin film battery of an embodiment;

Fig. 8 is the flow chart of the preparation method of the absorbing layer of copper-zinc-tin-sulfur thin film battery of preferred embodiment of the present invention;

Fig. 9 is the structural diagram of the substrate of another embodiment;

FIG. 10 is a specific structural diagram of a copper-zinc-tin-sulfur thin film battery according to an embodiment. the

Detailed ways

In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive. the

It should be noted that when an element is referred to as being "fixed" to another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only and are not intended to represent the only embodiments. the

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is only for the purpose of describing specific embodiments, and is not intended to limit the present invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. the

Please refer to FIG. 1 , a thin-film solar cell annealing device 100 in a preferred embodiment of the present invention is used to selenize or vulcanize the metal thin film prefabricated layer on the substrate 200 . The thin film solar cell annealing device 100 includes an annealing furnace 110 , a substrate frame 130 and a first heating lamp 150 . the

The annealing furnace 110 is a hollow structure with a closed annealing chamber 112 inside. The substrate holder 130 and the first heating lamp tube 150 are all accommodated in the annealing chamber 112, and the space of the annealing chamber 112 can be compressed as much as possible to meet the necessary elements such as the substrate holder 130 and the first heating lamp tube 150. During the annealing process, the saturated vapor pressure of selenium or sulfur is quickly reached, and the amount of selenium or sulfur is reduced. the

The substrate holder 130 is generally a hollow structure, which is disposed on the side wall of the annealing chamber 112 . The substrate 200 may be loaded on the substrate holder 130 . the

Please also refer to FIG. 2 , the first heating lamp 150 is a halogen lamp with a power of 1kW. One end of the first heating lamp tube 150 is disposed on the side wall of the annealing chamber 112 , and the first heating lamp tube 150 is located on the side of the substrate 200 provided with the metal thin film prefabricated layer. The first heating lamp 150 and the substrate 200 are spaced apart from each other, and the first heating lamp 150 is parallel to the plane where the substrate holder 130 is located. The first heating lamp tube 150 and the substrate holder 130 can move relative to each other. the

Specifically, in this embodiment, one end of the first heating lamp 150 is fixed on the side wall of the annealing chamber 112 . The thin-film solar cell annealing device 100 also includes a horizontal slide rail (not shown in the figure) and a transmission device (not shown in the figure). The horizontal slide rail is fixed on the side wall of the annealing chamber 112 . The transmission device is slidably disposed on the horizontal slide rail, and the substrate frame 130 is disposed on the transmission device. The transmission device can drive the substrate holder 130 to move in the horizontal direction, so that the first heating lamp tube 150 and the substrate holder 130 can move relative to each other. the

The distance between the first heating lamp 150 and the substrate 200 is less than 5mm. When carrying out the annealing process, the transmission device drives the substrate holder 130 to move on the horizontal slide rail at a speed of 0.3 mm/s, so that the first heating lamp tube 150 moves from one end of the side of the substrate 200 provided with the metal thin film prefabricated layer to the other end to evenly heat the surface of the substrate 200. It can be understood that the power of the first heating lamp tube 150 is not limited to 1kW, it depends on the actual process. The distance between the first heating lamp 150 and the substrate 200 and the moving speed of the substrate holder 130 will also change due to the power of the first heating lamp 150 , the required selenization or vulcanization efficiency and other factors. the

It should be noted that, in other embodiments, the substrate holder 130 can be fixed on the side wall of the annealing chamber 112 . One end of the first heating lamp tube 150 is disposed on the transmission device. The transmission device can drive the first heating lamp tube 150 to move in the horizontal direction, so that the first heating lamp tube 150 and the substrate holder 130 can move relative to each other. The above structure does not need to move the substrate 200 and can prevent the substrate 200 from falling off the substrate holder 130 due to movement. the

In the above annealing device 100 for thin film solar cells, the first heating lamp tube 150 is disposed in the annealing chamber 112 . Compared with the traditional annealing device for thin film solar cells, the first heating lamp tube 150 is closer to the substrate 200 . The heat emitted by the first heating lamp tube 150 is directly radiated to the surface of the substrate 200 , thereby increasing the rapid heating capability of the thin film solar cell annealing device 100 . the

In addition, the relative movement between the first heating lamp 150 and the substrate frame 130 makes the surface of the substrate 200 evenly heated, and the selenization or sulfurization reaction is also more uniform, and finally the quality of the absorbing layer of the thin film solar cell is better. At the same time, compared with the traditional thin-film solar cell annealing device, only one first heating lamp tube 150 is needed to ensure the uniformity of heating on the surface of the substrate 200, which saves energy. the

Please also refer to FIG. 3 , the thin film solar cell annealing device 100 further includes a second heating lamp 170 . One end of the second heating lamp 170 is disposed on the side wall of the annealing chamber 112 , and the second heating lamp 170 is located on a side of the substrate 200 away from the first heating lamp 150 . The second heating lamp 170 is spaced from the substrate 200 , and the second heating lamp 170 is parallel to the plane where the substrate holder 130 is located. Please also refer to FIG. 4 , there may be multiple second heating lamp tubes 170 , and the multiple second heating lamp tubes 170 are evenly distributed on the same horizontal plane. the

Since the substrate 200 has a layered structure, when heated, the temperature on one side rises rapidly, and stress occurs between the layered structures, which may cause the substrate in the substrate 200 away from the first heating lamp 150 to break. The second heating lamp 170 is arranged on the side of the substrate 200 away from the first heating lamp 150, and the second heating lamp 170 heats the substrate 200 together with the first heating lamp 150, thereby improving the uniformity of temperature distribution , effectively prevent the substrate from cracking. the

In the above-mentioned embodiments, it is also possible that the base substrate reciprocates rapidly relative to all the heating lamps, so that the temperature of the entire substrate rises uniformly at the same time. the

The present invention also provides a method for preparing an absorbing layer of a copper indium gallium selenide thin film battery, which uses the above-mentioned thin film solar cell annealing device 100 . the

Please also refer to Fig. 5, the preparation method of the absorption layer of the copper indium gallium selenium thin film battery in the preferred embodiment of the present invention, comprises the following steps:

Step S510, providing a substrate deposited with a back electrode layer. Please also refer to Fig. 6, a substrate 610 is provided, the material of the substrate 610 can be made of soda-lime glass, flexible stainless steel or polyimide plastic, and a layer of molybdenum can be deposited on the surface of the substrate 610 as the back electrode layer 620 . the

Step S520, depositing a prefabricated metal thin film layer composed of copper, indium and gallium on the back electrode layer by vapor deposition or sputtering. Specifically, in this embodiment, a sputtering method, such as a magnetron sputtering method, is used to bombard the corresponding metal target with argon ions in a vacuum chamber, and deposit it on the back electrode layer 620 to form a copper, indium, and gallium metal target. Metal thin film prefabricated layer 630 . the

In other embodiments, the evaporation method can also be used to heat the copper source, indium source, gallium source, etc., and form vapor, which is deposited on the back electrode layer 620 to form a metal thin film prefabricated layer composed of copper, indium, and gallium. 630. the

In step S530, a layer of selenium is vapor-deposited on the metal thin film prefabricated layer to obtain a substrate. Using the evaporation method, the selenium source is heated and deposited on the metal thin film prefabricated layer 630 to form the selenium layer 640 . The substrate 610 , the back electrode layer 620 , the prefabricated metal thin film layer 630 and the selenium layer 640 are stacked in sequence to form the substrate 200 . the

Step S540, loading the substrate on the substrate holder. Referring to FIG. 1 to FIG. 4 again, the substrate 200 is loaded on the substrate holder 130 . the

Step S550, moving the first heating lamp tube and the substrate at a relatively constant speed, and moving the first heating lamp tube from one end of the side of the substrate provided with the metal thin film prefabricated layer to the other end, so as to uniformly heat the surface of the substrate , the copper indium gallium selenium thin film battery absorption layer is prepared on the back electrode layer. The first heating lamp tube 150 moves from one end of the side of the substrate 200 provided with the metal thin film prefabricated layer 630 to the other end, and the surface of the substrate 200 is evenly heated. Please also refer to FIG. 7 , the metal thin film prefabricated layer 630 reacts with the selenium layer 640 , the metal thin film prefabricated layer 630 is uniformly selenized, and the absorption layer 650 of the CIGS thin film battery is formed on the back electrode layer 620 . the

In the method for preparing the absorbing layer of the above CIGS thin film battery, the first heating lamp tube 150 is closer to the substrate 200 . The heat emitted by the first heating lamp tube 150 is directly radiated to the surface of the substrate 200, which meets the requirement of rapid temperature rise in the annealing process. In addition, the relatively uniform motion between the first heating lamp tube 150 and the substrate holder 130 makes the surface of the substrate 200 evenly heated, and the selenization reaction is also more uniform, and finally the quality of the absorption layer of the copper indium gallium selenium thin film battery is better. good. the

In addition, the present invention also provides a method for preparing an absorbing layer of a copper-zinc-tin-sulfur thin-film battery, which uses the above-mentioned thin-film solar battery annealing device 100 . Please also refer to Fig. 8, the method for preparing the absorption layer of copper-zinc-tin-sulfur thin-film battery in the preferred embodiment of the present invention, comprises the following steps:

Step S810, providing a substrate deposited with a back electrode layer. Please also refer to FIG. 9, a substrate 910 is provided, the material of the substrate 910 can be made of soda-lime glass, flexible stainless steel or polyimide plastic, and a layer of molybdenum can be deposited on the surface of the substrate 910 as the back electrode layer 920 . the

Step S820, depositing a metal thin film prefabricated layer composed of copper, zinc and tin on the back electrode layer by vapor deposition or sputtering. Specifically, in this embodiment, a sputtering method, such as a magnetron sputtering method, is used to bombard the corresponding metal target with argon ions in a vacuum chamber, and deposit it on the back electrode layer 920 to form a copper, zinc, tin Metal thin film prefabricated layer 930 . the

In other embodiments, the evaporation method can also be used to heat the copper source, zinc source, tin source, etc., and form steam, which is deposited on the back electrode layer 920 to form a metal thin film prefabricated layer composed of copper, zinc, and tin. 930. the

Step S830, evaporating a layer of sulfur on the metal thin film prefabricated layer to obtain a substrate. Using the evaporation method, the sulfur source is heated and deposited on the metal thin film prefabricated layer 930 to form the sulfur layer 940 . The substrate 910 , the back electrode layer 920 , the prefabricated metal thin film layer 930 and the sulfur layer 940 are stacked sequentially to form the substrate 200 . the

Step S840, loading the substrate on the substrate holder. Referring to FIG. 1 to FIG. 4 again, the substrate 200 is loaded on the substrate holder 130 . the

Step S850, moving the first heating lamp tube and the substrate at a relatively constant speed, and moving the first heating lamp tube from one end of the side of the substrate provided with the metal thin film prefabricated layer to the other end, so as to uniformly heat the surface of the substrate , on the back electrode layer, the copper-zinc-tin-sulfur thin-film battery absorption layer is prepared. The first heating lamp tube 150 moves from one end of the side of the substrate 200 provided with the metal thin film prefabricated layer 930 to the other end, and the surface of the substrate 200 is evenly heated. Please also refer to FIG. 10 , the metal thin film prefabricated layer 930 reacts with the sulfur layer 940 , the metal thin film prefabricated layer 930 is uniformly vulcanized, and the absorber layer 950 of the CuZnSnS thin film battery is formed on the back electrode layer 920 . the

In the method for preparing the absorption layer of the copper-zinc-tin-sulfur thin film battery described above, the first heating lamp tube 150 is closer to the substrate 200 . The heat emitted by the first heating lamp tube 150 directly radiates to the surface of the substrate 200, which meets the requirement of rapid temperature rise in the annealing process. In addition, the relatively uniform motion between the first heating lamp tube 150 and the substrate holder 130 makes the surface of the substrate 200 evenly heated, and the vulcanization reaction is also more uniform, and finally the quality of the absorbing layer of the copper-zinc-tin-sulfur thin film battery is better. . the

The above-mentioned embodiments only express several implementation modes of the present invention, and the description thereof is relatively specific and detailed, but should not be construed as limiting the patent scope of the present invention. It should be pointed out that those skilled in the art can make several modifications and improvements without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent for the present invention should be based on the appended claims. the

Claims (10)

1. a thin-film solar cells annealing device is used for on-chip metallic film preformed layer is carried out selenizing or sulfuration, it is characterized in that, comprising:

Annealing furnace is hollow structure, and its inside is airtight anneal chamber;

Substrate frame is arranged on the described anneal chamber sidewall, and described substrate can be loaded on the described substrate frame;

The first heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the first heating fluorescent tube is positioned at the side that described substrate is provided with the metallic film preformed layer, described the first heating fluorescent tube and described substrate space, and described the first heating fluorescent tube and described substrate frame place plane parallel can be movable relatively between described the first heating fluorescent tube and the described substrate frame.

2. thin-film solar cells annealing device according to claim 1 is characterized in that, the interval between described the first heating fluorescent tube and described substrate is less than 5 millimeters.

3. thin-film solar cells annealing device according to claim 1 is characterized in that, described the first heating fluorescent tube one end is fixed on the described anneal chamber sidewall; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, described substrate frame is arranged on the described transmission mechanism, and described transmission mechanism can drive described substrate frame and move in the horizontal direction.

4. thin-film solar cells annealing device according to claim 3 is characterized in that, described transmission mechanism drives described substrate frame and moves at described horizontal slide rail with the speed of 0.3 mm/second.

5. thin-film solar cells annealing device according to claim 1 is characterized in that, described substrate frame is fixed on the described anneal chamber sidewall; Described thin-film solar cells annealing device also comprises horizontal slide rail and transmission mechanism, described horizontal slide rail is fixed on the described anneal chamber sidewall, described transmission mechanism is mounted slidably in described horizontal slide rail, one end of described the first heating fluorescent tube is arranged on the described transmission mechanism, and described transmission mechanism can drive described the first heating fluorescent tube and move in the horizontal direction.

6. thin-film solar cells annealing device according to claim 1, it is characterized in that, also comprise the second heating fluorescent tube, the one end is arranged on the described anneal chamber sidewall, described the second heating fluorescent tube is positioned at described substrate away from a side of described the first heating fluorescent tube, described the second heating fluorescent tube and described substrate space, and described the second heating fluorescent tube and described substrate frame place plane parallel.

7. thin-film solar cells annealing device according to claim 6 is characterized in that, described the second heating fluorescent tube is a plurality of, and described a plurality of the second heating fluorescent tube evenly distributes on the same level face.

8. thin-film solar cells annealing device according to claim 1 is characterized in that, described the first heating fluorescent tube is halogen lamp, and its power is 1kW.

9. a copper indium gallium selenide film battery absorption layer preparation method is characterized in that, may further comprise the steps:

The substrate that deposits dorsum electrode layer is provided;

Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, indium, gallium form on described dorsum electrode layer;

Evaporation one deck selenium obtains substrate on described metallic film preformed layer;

Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;

Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper indium gallium selenide film battery absorption layer at described dorsum electrode layer.

10. a copper-zinc-tin-sulfur film battery obsorbing layer preparation method is characterized in that, may further comprise the steps:

The substrate that deposits dorsum electrode layer is provided;

Adopt vapour deposition method or sputtering method, the metallic film preformed layer that deposited copper, zinc, tin form on described dorsum electrode layer;

Evaporation one deck sulphur obtains substrate on described metallic film preformed layer;

Provide claim 1 to the described thin-film solar cells annealing device of claim 7 any one, with described substrate load on substrate frame;

Make relative uniform motion between described the first heating fluorescent tube and described substrate, and make described the first heating fluorescent tube be provided with the end motion of a side of metallic film preformed layer from described substrate to the other end, with to described substrate surface homogeneous heating, make the copper-zinc-tin-sulfur film battery obsorbing layer at described dorsum electrode layer.

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