CN102995088A - Preparation method for lead telluride-based thermoelectric coating material - Google Patents
Preparation method for lead telluride-based thermoelectric coating material Download PDFInfo
- Publication number
- CN102995088A CN102995088A CN2012105611572A CN201210561157A CN102995088A CN 102995088 A CN102995088 A CN 102995088A CN 2012105611572 A CN2012105611572 A CN 2012105611572A CN 201210561157 A CN201210561157 A CN 201210561157A CN 102995088 A CN102995088 A CN 102995088A
- Authority
- CN
- China
- Prior art keywords
- pbte
- preparation
- thermoelectric
- mol
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 239000011248 coating agent Substances 0.000 title claims abstract description 30
- 238000000576 coating method Methods 0.000 title claims abstract description 30
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910002665 PbTe Inorganic materials 0.000 claims abstract description 28
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 23
- 239000010439 graphite Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 11
- 238000004070 electrodeposition Methods 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002019 doping agent Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000008021 deposition Effects 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 2
- 229910018321 SbTe Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 229910018989 CoSb Inorganic materials 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
Images
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
The invention belongs to the field of a thermoelectric material and in particular relates to a preparation method for a lead telluride-based thermoelectric coating material. The preparation method comprises the following steps of: using graphite as an anode, Cu, Ni, Al, Au, Ag or graphite as a cathode; carrying out electro-deposition for 3-8 hours in an electrolyte solution at a temperature of 25 DEG C to 65 DEG C; depositing on the surface of the cathode to obtain a PbTe or PbTeTl thermoelectric coating. The electro-deposition method provided by the invention has high efficiency, can obtain PbTe with a controllable thickness and uniform components and a PbTe-based thermoelectric material containing dopant; the electric potential of the electro-deposition or current density is controlled to realize the co-deposition of two or more metals, and to form the PbTe or the PbTeTl coating. The preparation method has low cost, high efficiency and strong operability.
Description
Technical field
The invention belongs to the thermoelectric material field, be specifically related to the preparation method of the thermoelectric coated material of a kind of lead telluride base.
Background technology:
Thermoelectric material is a kind of functional materials that utilizes thermoelectric effect (also being the Peltier Seebeck effect) directly heat deflection to be become electricity or conversely electricity is changed into the temperature difference.Thermoelectric material can be changed electric energy and heat energy mutually, can be used for thermoelectricity and magneto-electric functional material, is the important materials of preparation solid-state electric refrigeration device, thermoelectric power generation device and magnetoelectricity device.The index that characterizes pyroelectric material performance is material " figure of merit " (figure of merit)
Z, it is defined as:
Z=
α 2 σ/κ, wherein:
αBe the Seebeck coefficient,
σBe specific conductivity,
κBe thermal conductivity, the figure of merit of thermoelectric material can be divided into two portions: power factor (power factor)
α 2 σThe electrical property of reflection material, thermal conductivity
κThe heat conductivility of reflection material.
Thermoelectric material has oxide type and alloy-type, wherein metal oxide has high thermostability and chemical stability, can in high temperature and oxygen atmosphere, use, and most of oxide compounds are all nontoxic, pollution-free, environmental friendliness, it is a kind of environmentally friendly thermoelectric material with broad prospect of application, the advantage of oxide type thermoelectric material is that the environment for use temperature is high, can under the 500-1100K environment, use, shortcoming is poorly conductive, so that figure of merit is lower, and conversion efficiency of thermoelectric is not high yet, and 6 %～11% is only arranged, and oxide type thermoelectric material commonly used has (Zn
1-xAl
x) O, (Zn
1-yMg
y)
1-xAlO, (Ca
1-xBi
x) MnO
3CdIn
2-xSn
xO
4, Cd
2SnO
3, Cd
2Sn
1-xSb
xO
4, In
2Te
1-xRe
xO
4, NaCo
2O
4And CuAlO
2Alloy or intermetallic compound electric material hot in nature has: β-Zn
4Sb
3, Β-FeSi, Mg
2Si
,Bi
1-xSb
x, Bi
2Te
3, Sb
2Te
3And (Bi
1-xSb
x)
2Te
3, Bi
2Se
3And Bi
2Te
3-ySe
y, PbSe and PbSe
1-xTe
x, CoSb
3With SiGe etc., its great advantage is that the good conductivity figure of merit is high, thermoelectric conversion efficiency is also higher, reach 10%～15%, but can not in the stronger environment of very high temperature and oxidisability, use, its suitable temperature is 300-500K, and a remarkable defective of intermetallic compound is that thermal conductivity is higher, and general displacement or the multi-element alloyed method of adopting reduces its thermal conductivity.
PbTe is a kind of preferably thermoelectric material, have the NaCl crystalline structure and be widely used in the interior traditional hot electric material of mesophilic range, its use temperature can reach 673K, 15%～21%, but figure of merit is not high, and other elements that therefore often need to mix are filled, the atom of filling is less, quality is larger, the scattering effect that they produce is just larger, more unordered, and the reduction of lattice thermal conductivity is just more obvious, just can improve figure of merit.The PbTe that for example mixes behind Ag and the Sb is its derivative AgPb
mSbTe
2+mAnd AgSbTe
2The sosoloid that forms, AgPb
18SbTe
20The ZT value of block materials when 800K reaches 2.2, and this is because Ag
+, Sb
3+Replaced the Pb in the lattice
2+, so that there is the nanocrystalline zone of rich Ag-Sb in the lattice distorted in the PbTe lattice, the quantum dot of formation can effectively reduce lattice thermal conductivity, thereby improves the ZT value.
The method for preparing at present PbTe has alloying, solid-phase synthesis, magnetron sputtering method and physical vaporous deposition, the PbTe of front two kinds of methods preparation adopts Bridgman sintering or mechanical alloy to be combined to after both components in certain proportion are mixed, and causes uneven components when reaction is incomplete; It is very low that rear two kinds of magnetron sputtering methods and physical vaporous deposition are produced recoating efficiency, and coating performance descends.
Summary of the invention
The present invention is directed to the problem that prior art exists, the preparation method of the thermoelectric coated material of a kind of lead telluride base is provided, purpose is by adopting electrodip process to add tellurium dioxide, lead nitrate and thallous nitrate TlNO in nitric acid or sodium hydroxide solution
3Preparation lead telluride and the thermoelectric coated material of PbTe base that contains hotchpotch.
The technical scheme of realization the object of the invention is carried out according to following steps:
Take graphite as anode, take Cu, Ni, Al, Au, Ag or graphite as negative electrode, in being 25-65 ℃ electrolyte solution, temperature carries out galvanic deposit 3-8h, obtain PbTe or the thermoelectric coating of PbTeTl in the cathode surface deposition;
When described electrolyte solution chemical ingredients is TeO
20.01-0.06mol/L, Pb (NO
3)
2: 0.01-0.05 mol/L, HNO
30.1-0.4 during mol/L, the control cathode current density is 0.01-0.04A/cm
2, obtain the thermoelectric coating of PbTe;
When described electrolyte solution chemical ingredients is TeO
20.01-0.06mol/L, Pb (NO
3)
20.01-0.05mol/L, during NaOH0.1-0.3mol/L, control cathode current density 0.016-0.04A/cm
2, obtain the thermoelectric coating of PbTe;
When described electrolyte solution chemical ingredients is TeO
20.01-0.06mol/L, Pb (NO
3)
20.01-0.05mol/L, HNO
30.1-0.4mol/L, TlNO
30.01-0.05mol/L, or TeO
20.01-0.06 mol/L, Pb (NO
3)
20.01-0.05 mol/L, NaOH0.1-0.3 mol/L, TlNO
30.01-0.05 during mol/L, control cathode current density 0.015-0.06A/cm
2, obtain the thermoelectric coating of PbTeTl.
Compared with prior art, characteristics of the present invention and beneficial effect are:
The inventive method both can be selected acidic electrolyte solution on the electrolyte solution composition, can select alkaline electrolyte solution again, the TeO in the electrolyte solution composition
2Be intermediate oxide, both can in acidic conditions, dissolved also and can in alkaline condition, dissolve that the product that dissolves is also different in acid and alkalescence, pass through to control corresponding NaOH and HNO in the inventive method
3Concentration makes in the certain acidity scope and can make TeO
2When effectively dissolving, the sedimentation potential and the acidity control that guarantee PbTe are containing the Te ion and are containing in current potential-acidity (E-pH) scope of Pb ion codeposition, higher acidity can only deposit Pb, cross low acid concentration, can only deposit Te or other products, can not get expecting product P bTe, thereby, by calculating and make pH-Electric Potential Graph
Draw and to make acidity and the current potential that contains the Te ion and contain Pb ion codeposition, thereby the optimal components of determining electrolyte solution is chosen.
Electro-deposition method efficient of the present invention is high, can access that thickness is controlled, the PbTe of homogeneous chemical composition and the PbTe base thermoelectricity material that contains hotchpotch, the way of crossing the current potential of controlling galvanic deposit or current density reaches two or more metal and jointly deposits, and forming PbTe or PbTeTl coating, the method cost is low, efficient is high, workable.
Description of drawings
Fig. 1 is the photomacrograph of the PbTe coating of the embodiment of the invention 1 preparation;
Fig. 2 is the TEM figure of the PbTe coating of the embodiment of the invention 1 preparation.
Embodiment
Below by embodiment content of the present invention is described in further details.
Embodiment 1
Take graphite as anode, take Cu as negative electrode, be 25 ℃ in temperature, composition is TeO
20.01mol/L, Pb (NO
3)
20.03 mol/L, HNO
30.2 carry out galvanic deposit 8h in the electrolyte solution of mol/L, the control cathode current density is 0.04A/cm
2, obtain the thermoelectric coating of PbTe in cathode surface deposition, its photomacrograph as shown in Figure 1, as can be seen from Figure 1, coatingsurface is smooth evenly, its TEM figure as shown in Figure 2, as can be seen from the figure PbTe uniform particles.
Embodiment 2
Take graphite as anode, take Ni as negative electrode, be 50 ℃ in temperature, composition is TeO
20.03mol/L, Pb (NO
3)
20.01 mol/L, HNO
30.4 carry out galvanic deposit 5h in the electrolyte solution of mol/L, the control cathode current density is 0.02A/cm
2, obtain the thermoelectric coating of PbTe in the cathode surface deposition.
Embodiment 3
Take graphite as anode, take Al as negative electrode, be 65 ℃ in temperature, composition is TeO
20.06mol/L, Pb (NO
3)
20.05 mol/L, HNO
30.1 carry out galvanic deposit 3h in the electrolyte solution of mol/L, the control cathode current density is 0.01A/cm
2, obtain the thermoelectric coating of PbTe in the cathode surface deposition.
Embodiment 4
Take graphite as anode, take Au as negative electrode, be 45 ℃ in temperature, composition is TeO
20.01mol/L, Pb (NO
3)
20.04mol/L, HNO
30.3mol/L, TlNO
30.02mol/L electrolyte solution in carry out galvanic deposit 5h, the control cathode current density is 0.03A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 5
Take graphite as anode, take Ag as negative electrode, be 25 ℃ in temperature, composition is TeO
20.05mol/L, Pb (NO
3)
20.05mol/L, HNO
30.1mol/L, TlNO
30.05mol/L electrolyte solution in carry out galvanic deposit 8h, the control cathode current density is 0.015A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 6
Take graphite as anode, take graphite as negative electrode, be 65 ℃ in temperature, composition is TeO
20.06mol/L, Pb (NO
3)
20.01mol/L, HNO
30.4mol/L, TlNO
30.01mol/L electrolyte solution in carry out galvanic deposit 3h, the control cathode current density is 0.06A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 7
Take graphite as anode, take Au as negative electrode, be 30 ℃ in temperature, composition is TeO
20.01 mol/L, Pb (NO
3)
20.01mol/L, NaOH 0.3 mol/L, TlNO
30.05 carry out galvanic deposit 4h in the electrolyte solution of mol/L, the control cathode current density is 0.06A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 8
Take graphite as anode, take Cu as negative electrode, be 25 ℃ in temperature, composition is TeO
20.06 mol/L, Pb (NO
3)
20.05 mol/L, NaOH0.1 mol/L, TlNO
30.03 carry out galvanic deposit 3h in the electrolyte solution of mol/L, the control cathode current density is 0.015A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 9
Take graphite as anode, take Ag as negative electrode, be 50 ℃ in temperature, composition is TeO
20.04 mol/L, Pb (NO
3)
20.02mol/L, NaOH0.2 mol/L, TlNO
30.01 carry out galvanic deposit 8h in the electrolyte solution of mol/L, the control cathode current density is 0.02A/cm
2, obtain the thermoelectric coating of PbTeTl in the cathode surface deposition.
Embodiment 10
Take graphite as anode, take Ag as negative electrode, be 30 ℃ in temperature, composition is TeO
20.06mol/L, Pb (NO
3)
20.01mol/L, carry out galvanic deposit 3.5h in the electrolyte solution of NaOH0.1mol/L, the control cathode current density is 0.016A/cm
2, obtain the thermoelectric coating of PbTe in the cathode surface deposition.
Embodiment 11
Take graphite as anode, take Ni as negative electrode, be 50 ℃ in temperature, composition is TeO
20.01mol/L, Pb (NO
3)
20.05mol/L, carry out galvanic deposit 3.5h in the electrolyte solution of NaOH0.3mol/L, the control cathode current density is 0.04A/cm
2, obtain the thermoelectric coating of PbTe in the cathode surface deposition.
Embodiment 12
Take graphite as anode, take Au as negative electrode, be 70 ℃ in temperature, composition is TeO
20.05mol/L, Pb (NO
3)
20.02mol/L, carry out galvanic deposit 3h in the electrolyte solution of NaOH0.2mol/L, the control cathode current density is 0.025A/cm
2, obtain the thermoelectric coating of PbTe in the cathode surface deposition.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210561157.2A CN102995088B (en) | 2012-12-21 | 2012-12-21 | Preparation method for lead telluride-based thermoelectric coating material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210561157.2A CN102995088B (en) | 2012-12-21 | 2012-12-21 | Preparation method for lead telluride-based thermoelectric coating material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102995088A true CN102995088A (en) | 2013-03-27 |
| CN102995088B CN102995088B (en) | 2015-04-08 |
Family
ID=47924177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210561157.2A Expired - Fee Related CN102995088B (en) | 2012-12-21 | 2012-12-21 | Preparation method for lead telluride-based thermoelectric coating material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102995088B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106868563A (en) * | 2015-12-11 | 2017-06-20 | 中国海洋大学 | A kind of preparation method and application of selenide thin film modified nickel foam electrode |
| CN106935513A (en) * | 2017-02-26 | 2017-07-07 | 桂林理工大学 | A kind of preparation method of Te/PbTe hetero-junctions nano thin-film |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0481718A2 (en) * | 1990-10-19 | 1992-04-22 | Bp Solar Limited . | electrochemical process |
| CN101613867A (en) * | 2009-07-25 | 2009-12-30 | 天津大学 | Galvanic deposit Bi 2Te 3The preparation method of mixed with thin-film thermoelectric material |
| US20110226299A1 (en) * | 2009-01-02 | 2011-09-22 | Tarek Makansi | Device for energy conversion, electrical switching, and thermal switching |
| CN102392282A (en) * | 2011-11-26 | 2012-03-28 | 济南大学 | Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition |
| CN102569633A (en) * | 2010-12-24 | 2012-07-11 | 中国电子科技集团公司第十八研究所 | Preparation method for bismuth telluride temperature difference power generation device |
-
2012
- 2012-12-21 CN CN201210561157.2A patent/CN102995088B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0481718A2 (en) * | 1990-10-19 | 1992-04-22 | Bp Solar Limited . | electrochemical process |
| US20110226299A1 (en) * | 2009-01-02 | 2011-09-22 | Tarek Makansi | Device for energy conversion, electrical switching, and thermal switching |
| CN101613867A (en) * | 2009-07-25 | 2009-12-30 | 天津大学 | Galvanic deposit Bi 2Te 3The preparation method of mixed with thin-film thermoelectric material |
| CN102569633A (en) * | 2010-12-24 | 2012-07-11 | 中国电子科技集团公司第十八研究所 | Preparation method for bismuth telluride temperature difference power generation device |
| CN102392282A (en) * | 2011-11-26 | 2012-03-28 | 济南大学 | Method for electrochemical preparation of cadmium telluride semiconductor film under alkaline water phase condition |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106868563A (en) * | 2015-12-11 | 2017-06-20 | 中国海洋大学 | A kind of preparation method and application of selenide thin film modified nickel foam electrode |
| CN106868563B (en) * | 2015-12-11 | 2019-01-25 | 中国海洋大学 | Preparation method and application of selenide film modified foam nickel electrode |
| CN106935513A (en) * | 2017-02-26 | 2017-07-07 | 桂林理工大学 | A kind of preparation method of Te/PbTe hetero-junctions nano thin-film |
| CN106935513B (en) * | 2017-02-26 | 2019-08-13 | 桂林理工大学 | A kind of preparation method of Te/PbTe hetero-junctions nano thin-film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102995088B (en) | 2015-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Whittles et al. | Core levels, band alignments, and valence-band states in CuSbS2 for solar cell applications | |
| Nandy et al. | A review on Cu | |
| Rühle et al. | All-oxide photovoltaics | |
| TWI739759B (en) | Thermoelectric element and thermoelectric module comprising the same, and method of thermoelectric generation using the same | |
| CN103060750B (en) | Method for preparing bismuth, antimony and telluride base thermoelectric film | |
| Suryawanshi et al. | Improved photoelectrochemical performance of Cu2ZnSnS4 (CZTS) thin films prepared using modified successive ionic layer adsorption and reaction (SILAR) sequence | |
| CN102194989B (en) | Method for preparing thermoelectric material of ternary diamond structure | |
| WO2016192001A1 (en) | Aqueous-based method of preparing metal chalcogenide nanomaterials | |
| CN103545016A (en) | Crystalline silicon solar cell front electrode electrocondution slurry and preparation method thereof | |
| US20220131138A1 (en) | Materials and methods for components of zinc-ion batteries | |
| CN101613867B (en) | Preparation method of electrodeposited Bi2Te3 doped thin film thermoelectric material | |
| Latronico et al. | Effect of the annealing treatment on structural and transport properties of thermoelectric Sm y (Fe x Ni1− x) 4Sb12 thin films | |
| Ahmad et al. | Evolution of metal tellurides for energy storage/conversion: from synthesis to applications | |
| CN102637777A (en) | A chemical preparation process of Cu2O nanometer thin film for solar cell light absorption layer | |
| JP2017168609A (en) | Thermoelectric conversion element, thermoelectric conversion module, and thermoelectric conversion system | |
| Gapanovich et al. | New absorbers for third-generation thin-film solar cells based on Cu–A–B–S–Se (A= Ba, Sr, Fe, Ni, or Mn; B= Si, Ge, or Sn) quaternary copper compounds | |
| JP5348394B2 (en) | (Zn, Al) O-based transparent electrode layer for solar cell and ZnO-Al2O3-based sputtering target used for forming the same | |
| CN102995088A (en) | Preparation method for lead telluride-based thermoelectric coating material | |
| CN101420010A (en) | Liquid phase electric deposit N type or P type thin-film thermoelectric material and production method thereof | |
| CN104480508A (en) | A kind of preparation method of Bi2Te3 nanometer thermoelectric thin film of porous layer | |
| CN102447009B (en) | Preparation method of solar battery absorption layer thin film material | |
| Tu et al. | Fundamental understanding on selenium electrochemistry: from electrolytic cell to advanced energy storage | |
| CN101383384A (en) | Silver-copper composite oxide film material for optoelectronic semiconductor | |
| Le | Preparation of transition metal oxide thin films used as solar absorbers | |
| Mu et al. | One-step synthesis and photoelectrical performance of feather-like tellurium on nickel foil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151207 Address after: 111003 Liaoning, Hongwei District, Liaoyang Hongwei Road, room 9, No. 213 Patentee after: LIAOYANG TAIKE LEINUO SCIENCE & TECHNOLOGY Co.,Ltd. Address before: A street in Shenyang Hunnan New District of Liaoning province 110179 City No. 7-3 Shuguang building room 1004 Patentee before: Shenyang RKDA Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170328 Address after: Shen Liaoning Road 110870 in Liaoning province Shenyang City Economic and Technological Development Zone No. 111 Patentee after: SHENYANG University OF TECHNOLOGY Address before: 111003 Liaoning, Hongwei District, Liaoyang Hongwei Road, room 9, No. 213 Patentee before: LIAOYANG TAIKE LEINUO SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 |