CN102983232A - Manufacture method for vertical light-emitting diode - Google Patents
Manufacture method for vertical light-emitting diode Download PDFInfo
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- CN102983232A CN102983232A CN201210436414XA CN201210436414A CN102983232A CN 102983232 A CN102983232 A CN 102983232A CN 201210436414X A CN201210436414X A CN 201210436414XA CN 201210436414 A CN201210436414 A CN 201210436414A CN 102983232 A CN102983232 A CN 102983232A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000012670 alkaline solution Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 238000007788 roughening Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 73
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Abstract
The invention discloses a manufacture method for a vertical light-emitting diode. Surface roughening layers are formed on the upper surface, a lower surface and all the lateral faces of the vertical light-emitting diode manufactured through the manufacture method, and the vertical light-emitting diode is further provided with two rows of reflection layers which are parallel and abreast. The structure can greatly improve light-emitting efficiency and further can improve light-emitting evenness of the light-emitting diode.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of manufacture method of light-emitting diode of vertical-type.
Background technology
Semiconductor light-emitting-diode is used increasingly extensive, and the trend that replaces incandescent lamp and fluorescent lamp is particularly arranged aspect illumination, but also faces at present some technical problems, and particularly light taking-up efficient is lower.
In recent years, for luminous power and the efficient that improves light-emitting diode, developed the light-emitting diode of vertical stratification, with respect to the light-emitting diode of positive assembling structure, the light-emitting diode plurality of advantages of vertical stratification.For the light-emitting diode of positive assembling structure because n, p electrode are in the same side of substrate, so electric current must be between the n of homonymy, p-type electrode lateral flow, so just cause current crowding, caloric value is high.And two electrodes of light emitting diode with vertical structure are in respectively the both sides of light-emitting diode, and electric current almost whole vertical currents is crossed epitaxial loayer, do not have the electric current of lateral flow, so CURRENT DISTRIBUTION is even, and the heat of generation is relatively less.And because two electrodes of vertical stratification are in both sides, therefore go out can not be subject in the photoreduction process stopping that with lateral electrode its light extraction efficiency is higher.
In the practical work process of light-emitting diode, when light leaves diode inside, in any case it all can't avoid occuring loss, cause the main cause of loss, be to have high index of refraction owing to form the semi-conducting material of LED surface layer.High optical refractive index can cause light to produce total reflection at this semiconductor material surface, thereby the light that light-emitting diode inside is sent can't be launched fully.At present, improve light in the total reflection of diode inside by the surface coarsening technology in the industry, thereby raising luminous efficiency, yet, because roughening treatment is carried out on the surface that prior art usually only is grouped into structure to diode portion, therefore this has caused its roughened surface skewness, effective improving luminous efficiency.
Simultaneously, light-emitting diode sends is only produced by the luminescent layer in its internal structure, the light that luminescent layer sends mainly is to send by the front of light-emitting diode, and the light that sends from its side must first through the total reflection of light-emitting diode internal structure, make the light path of light change and could be sent by the side.Side bright dipping is not enough with regard to having caused the positive bright dipping of existing light-emitting diode too much for this, therefore also just causes the inhomogeneous of light-emitting diode bright dipping.
Fig. 1 is existing vertical type light emitting diode.Among Fig. 1, substrate 101 belows are formed with transparent metal ohmic contact layer 100, and N-shaped electrode 111 is realized being electrically connected with this substrate 101 by this transparent metal ohmic contact layer 100.And substrate 101 tops form GaN resilient coating 102, N-shaped GaN layer 103, multiple quantum well light emitting layer (MQW) 104, p-type AlGaN layer 105, p-type GaN layer 106, transparent electrode layer 107 successively, p metal electrode 112; Wherein GaN resilient coating 102 surfaces are by roughening treatment, to form nano level jagged surface coarsening layer 122.
In light emitting diode construction shown in Figure 1, because roughened layer only is formed at the inside of light-emitting diode, be on the surface of GaN resilient coating 102, therefore, although passed through the reflection of roughened layer 122 by the light of multiple quantum well light emitting layer 104 generation, can improve in certain degree the luminous efficiency of side, still, this roughened layer that is in the light-emitting diode inside also is not enough to further improve luminous efficiency.
And, light-emitting diode referring to structure shown in Figure 1, what as seen multiple quantum well light emitting layer 104 sent wide is manyly appeared by the front of light-emitting diode, namely the upper surface by transparent electrode layer 107 appears, and only has a small amount of light to be appeared by the side of light-emitting diode through after the total reflection of transparent electrode layer 107.Therefore, the uniformity of luminance of the light-emitting diode of structure shown in Figure 1 is still waiting to improve.
Summary of the invention
The present invention is directed to the problem of prior art, proposed a kind of manufacture method with the vertical type light emitting diode in coarse surface and reflector, thereby improve luminous efficiency and the uniformity of luminance of light-emitting diode.
The manufacture method of the vertical type light emitting diode that the present invention proposes comprises the steps:
(1) adopts MOCVD epitaxial growth GaN resilient coating at substrate;
(2) utilize alkaline solution that the surface of GaN resilient coating is corroded, thereby form nano level jagged described surface coarsening layer at the GaN buffer-layer surface;
(3) adopted MOCVD or molecular beam epitaxy technique (MBE) to form successively N-shaped GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer, p-type GaN layer at the GaN resilient coating by the surface of alligatoring;
(4) spin coating photoresist on p-type GaN layer surface utilizes photoetching process that photoetching is carried out on p-type GaN layer surface, in order to form groove in the both sides of p-type GaN layer;
(5) utilize sputtering process or electron beam evaporation process to form the first reflector and the second reflector at the groove of p-type GaN layer both sides;
(6) chemico-mechanical polishing (CMP) technique is carried out on the p-type GaN layer surface behind sputter the first reflector and the second reflector, so that the flattening surface of the first reflector, the second reflector and p-type GaN layer;
(7) adopt sputtering process to form transparent electrode layer on p-type GaN layer surface;
(8) lower surface at substrate adopts sputtering process to form described transparent ohmic contact metal level;
(9) vertical type light emitting diode with the complete layer stack structure is immersed in the alkaline solution, in order to all surface alligatoring of this stepped construction, form described surface coarsening layer;
(10) lower surface at the transparent ohmic contact metal level forms the N-shaped electrode, at the upper surface formation p-type electrode of transparent electrode layer.
Wherein, the material of substrate is sapphire, carborundum, zinc sulphide or GaAs;
Wherein, the surface coarsening layer can also utilize the plasma etching machine that dry etching is carried out on the surface of GaN resilient coating or carry out wet etching in the alkaline solution and then utilize the plasma etching machine to carry out dry etching combining to finish by being immersed in first;
Wherein, the material in the first reflector and the second reflector is Al/Ag alloying metal reflector, AlAs/Al
xGa
1-xAs or AlInP/ (Al
xGa
1-x)
yIn
1-yP distributed Bragg reflecting layer (DBR).
Description of drawings
Accompanying drawing 1 is for only there being the light emitting diode construction schematic diagram of part coarse surface in the prior art.
The light emitting diode construction schematic diagram with coarse surface and reflector that accompanying drawing 2 proposes for the present invention.
Accompanying drawing 3 is the planar structure schematic diagram of light-emitting diode shown in Figure 2.
Embodiment
The manufacture method of the vertical type light emitting diode that the present invention proposes may further comprise the steps:
(1) adopt MOCVD epitaxial growth GaN resilient coating 202 at substrate 201, the material of described substrate is sapphire, carborundum, zinc sulphide or GaAs;
(2) utilize alkaline solution that the surface of GaN resilient coating 202 is corroded, thereby form nano level jagged surface coarsening layer 222 on GaN resilient coating 202 surfaces; In the present invention, except utilizing alkaline solution to corrode the surface of GaN resilient coating 202 with the formation surface coarsening layer 222, also can utilize the plasma etching machine that dry etching is carried out on the surface of GaN resilient coating 202 and finish, can also carry out wet etching in the alkaline solution and then utilize the plasma etching machine to carry out dry etching combining to finish by being immersed in first.Combine to form the technique of surface coarsening layer for wet etching and dry etching, the present invention do not limit must first wet etching after dry etching, adopt first dry etching equally also to be fine at wet etching;
(3) adopted MOCVD or molecular beam epitaxy technique (MBE) to form successively N-shaped GaN layer 203, multiple quantum well light emitting layer (MQW) 204, p-type AlGaN layer 205, p-type GaN layer 206 at GaN resilient coating 202 by the surface of alligatoring;
(4) spin coating photoresist on p-type GaN layer 206 surface utilizes photoetching process that photoetching is carried out on p-type GaN layer 206 surface, in order to form groove (Fig. 2 232 and 231 position) in the both sides of p-type GaN layer 206;
(5) utilize sputtering process or electron beam evaporation process to form reflector 231 and 232 at the groove of p-type GaN layer 206 both sides, this reflector 231 and 232 material can be Al/Ag alloying metal reflector, also can be AlAs/Al
xGa
1-xAs or AlInP/ (Al
xGa
1-x)
yIn
1-yP distributed Bragg reflecting layer (DBR); Overlooked by the top of Fig. 2 and to see over, reflector 231 and 232 is two parallel array structures and is arranged in the both sides of p-type GaN layer 206, i.e. as shown in Figure 3 dash area;
(6) chemico-mechanical polishing (CMP) technique is carried out on p-type GaN layer 206 surface behind sputter reflector 231 and 232, so that reflector 231,232 and the flattening surface of p-type GaN layer 206;
(7) adopt sputtering process to form transparent electrode layer 207 on p-type GaN layer 206 surface;
(8) below substrate 201, adopt sputtering process to form transparent ohmic contact metal level 200;
(9) vertical type light emitting diode with the complete layer stack structure is immersed in the alkaline solution, so that with all surface alligatoring of this stepped construction, forms surface coarsening layer 221;
(10) lower surface at transparent ohmic contact metal level 200 forms N-shaped electrode 211, at the upper surface formation p-type electrode 212 of transparent electrode layer 207; Electrode 211 and 212 formation method can adopt the technique of this area routine to form, such as spin coating photoresist on the surface of transparent electrode layer 207 at first, the surface of exposing the transparent electrode layer 207 that will form electrode 212 after the development, after this by sputtering process to form electrode 212; The formation method of electrode 211 is identical therewith.
So far, form vertical type light emitting diode 2 by method of the present invention, referring to Fig. 2, the structure of light-emitting diode 2 comprises:: be formed with transparent ohmic contact metal level 200 below substrate 201, N-shaped electrode 211 is realized being electrically connected with this substrate 201 by this transparent metal ohmic contact layer 200.At substrate 201 upper surfaces, it forms GaN resilient coating 202, N-shaped GaN layer 203, multiple quantum well light emitting layer (MQW) 204, p-type AlGaN layer 205, p-type GaN layer 206, transparent electrode layer 207, p metal electrode 212, surface coarsening layer 221 successively.
After carrying out roughening treatment by the whole outer surface to light-emitting diode 2, the light that multiple quantum well light emitting layer 204 sends is behind each surface that arrives light-emitting diode 2, light outside the transmission critical angle is because the repeatedly refraction of process surface coarsening layer, can enter at last in the critical angle and be transmitted by each surface, thereby so that light-emitting diode 2 sends more light, therefore also just improved luminous efficiency.
In addition, manufacture method of the present invention also further is provided with the reflector in vertical type light emitting diode 2.This reflector 231 and 232 can be arranged on the upper surface (as shown in Figure 2) of p-type GaN layer 206, also can be arranged on the upper surface (not shown among Fig. 2) of p-type AlGaN layer 205, and the lower surface that perhaps is arranged on p-type GaN layer 206 or p-type AlGaN layer 205 also can.
Referring to Fig. 2, by reflector 231 and 232 are set, the part of the light that is sent by multiple quantum well light emitting layer 204 is directly appeared by the front of light-emitting diode 2, and another part is then through being appeared by the side of light-emitting diode 2 after the reflection of reflector 231 and 232.Because the existence of reflector 231 and 232 is arranged, the light that can arrive so light-emitting diode 2 fronts just is restricted to the part between the reflector 231 and 232 among Fig. 2, and can only be appeared from the side of light-emitting diode 2 by the light of reflector 231 and 232 reflections, therefore, this design just can improve the uniformity of luminance of light-emitting diode front and side.
Fig. 3 is the floor map of Fig. 2, namely overlooked by the top of Fig. 2 and schematic diagram.Referring to Fig. 3, reflector 231 and 232 is two parallel array structures, the part of the light that the multiple quantum well light emitting layer 204 of light-emitting diode 2 sends is appeared by the zone 300 among Fig. 3, and another part light appears from the side of light-emitting diode owing to the reflection of reflector 232 and 231.
So far, detailed explanation of foregoing description the manufacture method of vertical type light emitting diode of the present invention, when the vertical type light emitting diode by method manufacturing of the present invention can increase substantially luminous efficiency, can also further improve the uniformity of luminance of light-emitting diode.The embodiment of the description of preamble only is the preferred embodiments of the present invention, and it is not for limiting the present invention.Those skilled in the art can make any modification to the present invention, and protection scope of the present invention are limited to the appended claims under the prerequisite that does not break away from spirit of the present invention.
Claims (4)
1. the manufacture method of a vertical type light emitting diode may further comprise the steps:
(1) adopts MOCVD epitaxial growth GaN resilient coating at substrate;
(2) utilize alkaline solution that the surface of GaN resilient coating is corroded, thereby form nano level jagged described surface coarsening layer at the GaN buffer-layer surface;
(3) adopted MOCVD or molecular beam epitaxy technique (MBE) to form successively N-shaped GaN layer, multiple quantum well light emitting layer (MQW), p-type AlGaN layer, p-type GaN layer at the GaN resilient coating by the surface of alligatoring;
(4) spin coating photoresist on p-type GaN layer surface utilizes photoetching process that photoetching is carried out on p-type GaN layer surface, in order to form groove in the both sides of p-type GaN layer;
(5) utilize sputtering process or electron beam evaporation process to form the first reflector and the second reflector at the groove of p-type GaN layer both sides;
(6) chemico-mechanical polishing (CMP) technique is carried out on the p-type GaN layer surface behind sputter the first reflector and the second reflector, so that the flattening surface of the first reflector, the second reflector and p-type GaN layer;
(7) adopt sputtering process to form transparent electrode layer on p-type GaN layer surface;
(8) lower surface at substrate adopts sputtering process to form described transparent ohmic contact metal level;
(9) vertical type light emitting diode with the complete layer stack structure is immersed in the alkaline solution, in order to all surface alligatoring of this stepped construction, form described surface coarsening layer;
(10) lower surface at the transparent ohmic contact metal level forms the N-shaped electrode, at the upper surface formation p-type electrode of transparent electrode layer.
2. the manufacture method of vertical type light emitting diode as claimed in claim 1 is characterized in that:
The material of described substrate is sapphire, carborundum, zinc sulphide or GaAs.
3. the manufacture method of vertical type light emitting diode as claimed in claim 1 or 2 is characterized in that:
Described surface coarsening layer can also utilize the plasma etching machine that dry etching is carried out on the surface of GaN resilient coating or carry out wet etching in the alkaline solution and then utilize the plasma etching machine to carry out dry etching combining to finish by being immersed in first.
4. such as the manufacture method of one of any described vertical type light emitting diode of claim 1-3, it is characterized in that:
The material in described the first reflector and described the second reflector is Al/Ag alloying metal reflector, AlAs/Al
xGa
1-xAs or AlInP/ (Al
xGa
1-x)
yIn
1yP distributed Bragg reflecting layer (DBR).
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| CN201210436414.XA CN102983232B (en) | 2012-11-05 | 2012-11-05 | The manufacture method of vertical type light emitting diode |
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| CN201210436414.XA CN102983232B (en) | 2012-11-05 | 2012-11-05 | The manufacture method of vertical type light emitting diode |
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| CN102983232B CN102983232B (en) | 2016-04-13 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111200046A (en) * | 2020-01-13 | 2020-05-26 | 广东省半导体产业技术研究院 | LED chip structure and manufacturing method thereof |
| KR20210088558A (en) * | 2019-12-31 | 2021-07-14 | 충칭 콘카 포토일렉트릭 테크놀로지 리서치 인스티튜트 컴퍼니 리미티드 | Micro light emitting diode chip, manufacturing method thereof, and display device |
| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
| CN115579436A (en) * | 2022-09-30 | 2023-01-06 | 华灿光电(苏州）有限公司 | Light emitting diode with improved brightness and preparation method thereof |
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| CN113328013A (en) * | 2020-02-28 | 2021-08-31 | 山东浪潮华光光电子股份有限公司 | Preparation method of high-brightness infrared light emitting diode core and diode core |
| CN115579436A (en) * | 2022-09-30 | 2023-01-06 | 华灿光电(苏州）有限公司 | Light emitting diode with improved brightness and preparation method thereof |
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