CN102969343B - The protection ring structure and its manufacture method of a kind of high tension apparatus - Google Patents
The protection ring structure and its manufacture method of a kind of high tension apparatus Download PDFInfo
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- CN102969343B CN102969343B CN201210405330.XA CN201210405330A CN102969343B CN 102969343 B CN102969343 B CN 102969343B CN 201210405330 A CN201210405330 A CN 201210405330A CN 102969343 B CN102969343 B CN 102969343B
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 83
- 239000007924 injection Substances 0.000 claims abstract description 83
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000005684 electric field Effects 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004134 energy conservation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
Present invention is disclosed protection ring structure and manufacture method in a kind of high-voltage semi-conductor power device.The protection ring structure includes oxide layer, n type single crystal silicon substrate, Metal field plate, device region, multiple P+ type injection diffuser ring and the equal potential belts of interruption; complete depletion of N-type injects complete depletion of p-type injection diffuser ring under diffuser ring and zero-bias under also including zero-bias; N-type injection diffuser ring is embedded in the ring of P+ type injection diffuser ring, to provide positive charge；And p-type injection diffuser ring, it is embedded in n type single crystal silicon substrate, between two P+ type injection diffuser rings or P+ type injection diffuser ring and equal potential belt, and in the outside of Metal field plate, to provide negative electrical charge, so as to produce an outwardly directed and direction electric field opposite with surface field.Therefore, in the case of identical pressure voltage, protection ring structure of the invention not only reduces the number of diffuser ring, meanwhile, also reduce influence of the positive charge in oxidation technology to breakdown voltage.
Description
Technical field
The present invention relates to the protection ring structure in semiconductor applications, more particularly to a kind of high-voltage semi-conductor power device and
Manufacture method.
Background technology
As oil coal reserve is ceaselessly reduced, and the energy resource consumption of the mankind is continuously increased, and energy-conservation turns into 21
Century the mankind common recognition.Estimate there is 2/3rds electric power to be used in motor and drive according to USDOE.And be mainly used in
In the electronic circuits such as Switching Power Supply, PWM pulse width modulators, frequency converter, as high-frequency rectification diode, fly-wheel diode or damping
Diode uses constant power device, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, letter
Claim IGBT) and matched fast recovery diode（Abbreviation FRD）, motor can be made to drive energy-conservation 20%~30%.Can be pre-
Meter, power device can be in following rapid growth.
The structure of semiconductor power device be unable to do without PN junction（PN junction）.Using different doping process, by expanding
Effect is dissipated, P-type semiconductor and N-type semiconductor are produced on same block semiconductor（Typically silicon or germanium）On substrate, they
Interface just forms space-charge region and claims PN junction.
However, the PN junction depth for diffuseing to form is generally several microns, its curvature can cause electric field to be concentrated, and make breakdown voltage
It is low more than planar junction.Such as the pressure-resistant device more than 1200V of planar junction, 5 microns of deep knots are such as used, its curvature can cause electric field
Concentration makes breakdown voltage less than 400V, and far below the breakdown voltage of planar junction, therefore the periphery of the need in device needs protection ring.
Field plate field limiting ring structure is wherein to develop earlier, and technics comparing is simple, while the method for not increasing photoetching level, wide so far
General application.
Fig. 1 is referred to, Fig. 1 is the schematic diagram of field plate extra show limiting ring structure of the prior art.As illustrated, zone line
It is device region 9, protection ring is made up of a series of diffuser ring 5 of P+ type injection diffusion regions being embedded in n type single crystal silicon area 3, outermost
The N+ injection diffusion layers area 4 for enclosing is equal potential belt（High pressure or suspension are connect during work）.P+ type close to device region 9 injects diffusion region
Diffuser ring 5 be nullring, the diffuser ring 5 connecting to neutral when device region 9 work, then an outer circle P+ type injection diffusion region diffusion
Ring 5 is the first ring, is suspended during work, the like, i.e. the P+ type of Fig. 1 injects the diffuser ring 5 (field limiting ring part) of diffusion region
Continuously repeat, can obtain second and third, Fourth Ring so that more rings, to meet pressure-resistant demand.The manufacturing process of protection ring is substantially
In this way, on substrate, photoetching P+ type injects the diffuser ring 5 of diffusion region, inject, then, photoetching equipotential ring region 4 is injected and pushed away
Trap.
Fig. 2 is referred to, Fig. 2 is structural representation of the field plate extra show limiting ring structure of prior art after pressurization in oxidizing process
Figure.Because oxidizing process inevitably introduces positive charge in oxide layer or silicon oxide layer interface, make the depletion region border on surface
Inside lateral bend, as illustrated, dotted line is the depletion region boundary after deformation, so as to cause surface field to increase, breakdown potential pressure drop
It is low.
It is well known that with the increase of breakdown voltage, the area of protection ring increases therewith needed for field plate extra show limiting ring structure,
To make up because the positive charge that oxidation technology is introduced can increase surface field, breakdown voltage is reduced, as maintains breakdown voltage,
The number of increase ring is needed to make up.
Therefore, how to avoid introducing positive charge in oxide layer or silicon oxide layer interface in oxidizing process, make exhausting for surface
The inside lateral bend in area border, the number for reducing ring is current industry urgent problem.
The content of the invention
It is a primary object of the present invention to provide the high voltage protective ring structure in a kind of semiconductor power device, by changing
Ring structure of the prior art, under identical pressure voltage, by shortening interannular away from so as to reduce protection ring area or excellent
Change each interannular away from, make each interannular away from pressure-resistant increase, to reduce the number of ring, reduce protection ring area and shorten guarantor simultaneously
Retaining ring design time.
To reach above-mentioned purpose, the present invention provides a kind of protection ring structure of high tension apparatus, and it includes：Have in its surface
There is the n type single crystal silicon substrate of the oxide layer of interruption, it is partially covered on the n type single crystal silicon substrate surface and oxide layer for exposing
Metal field plate, the device region being embedded in n type single crystal silicon substrate, the multiple P+ types being embedded in n type single crystal silicon substrate injection are expanded
Ring and the equal potential belt being embedded in the n type single crystal silicon substrate are dissipated, wherein, the P+ type injection diffuser ring close to device region is nullring,
And with device region be zone line around distribution, the connecting to neutral when device region works；Other P+ types inject diffuser ring in the device
Suspended when area works, and with nullring as zone line, a ring is surrounded on the outer ring of another ring；Equal potential belt is surrounded on multiple P+ types
Inject the periphery of diffuser ring；Complete depletion of N-type injects complete depletion of p-type under diffuser ring and zero-bias under also including zero-bias
Injection diffuser ring, complete depletion of N-type injection diffuser ring is embedded in the ring of the P+ type injection diffuser ring under zero-bias, to provide
Positive charge；And complete depletion of p-type injection diffuser ring under zero-bias, it is embedded in n type single crystal silicon substrate, positioned at two P+ type notes
Enter between diffuser ring or P+ type injection diffuser ring and equal potential belt, and in the outside of Metal field plate, to provide negative electrical charge, so as to produce
One outwardly directed and direction electric field opposite with surface field.
High voltage protective ring structure of the invention, the N-type injection diffuser ring is located in P+ type injection diffuser ring and leans on
Near-ring outer boundaries.
High voltage protective ring structure of the invention, the base of the N-type injection diffuser ring is injected in diffuser ring with P+ type
Depletion region border base it is concordant.
High voltage protective ring structure of the invention, the N-type injection diffuser ring is that N-type injection is lightly doped diffusion region.
High voltage protective ring structure of the invention, the p-type injection diffuser ring is that p-type injection is lightly doped diffusion region.
High voltage protective ring structure of the invention, the p-type injection diffuser ring is near P+ type injection diffuser ring
Inner ring border is set.
High voltage protective ring structure of the invention, the sectional area of the p-type injection diffuser ring is noted less than or equal to the N-type
Enter the sectional area of diffuser ring.
High voltage protective ring structure of the invention, the thickness of the oxide layer is more than 1 micron.
To reach above-mentioned purpose, the present invention also provides the manufacture method that a kind of high tension apparatus protect ring structure, including as follows
Step：
Step S01：A thin layer oxide layer is grown on zone-melted silicon single crystal, the oxygen with interruption is formed on silicon single crystal upper surface
Change layer；
Step S02：Photoetching N-type injection diffusion ring region, injects N-type impurity；Photoetching p-type injection diffusion ring region, injects P
Type impurity；Photoetching equipotential ring region, injects N-type impurity again；
Step S03：Growth field oxide, make Metal field plate be partially covered on the n type single crystal silicon substrate for exposing surface and
In oxide layer；
Step S04：Lithographic device area；
Step S05：Photoetching multiple P+ type injection diffusion ring region, and P+ type impurity is injected to form P+ type injection diffusion
Ring, remove photoresist pusher trap；
Step S06：Metal deposit is etched, passivation layer precipitation etching；
Step S07：Thinning back side, implanted dopant is simultaneously activated, back metal deposition.
From above-mentioned technical proposal as can be seen that field plate extra show limiting ring structure of the invention has drawn to enter complete depletion of N or p-type
Silicon, there is provided the electric field in opposite direction with surface field, to weaken the surface field for causing punch through, improves breakdown voltage.Therefore,
In the case of identical pressure voltage, field plate extra show limiting ring structure of the invention not only reduces the number of ring, saves area,
Meanwhile, also reduce influence of the positive charge in oxidation technology to breakdown voltage.
Brief description of the drawings
Fig. 1 is the schematic cross-section for being applied to field plate extra show limiting ring structure of the prior art
Fig. 2 is to be applied to the schematic diagram after field limiting ring of the prior art pressurizes in oxidizing process；Wherein, fine dotted line is
On the border of p-type ring, chain-dotted line is border of the depletion region in NXing Qingcan areas to depletion region.
Fig. 3 is the field plate plus field limiting ring sectional view schematic diagram of a specific embodiment of the invention
Fig. 4 is the schematic diagram after field limiting ring structure of the present invention pressurizes in oxidizing process；Wherein, fine dotted line is that depletion region exists
The border of p-type ring, chain-dotted line is border of the depletion region in NXing Qingcan areas
Specific embodiment
Embodying feature of present invention will in detail describe with some exemplary embodiments of advantage in the explanation of back segment.It should be understood that
It is that the present invention can have various changes in different examples, it is neither departed from the scope of the present invention, and explanation therein
And diagram is illustrated as being used in itself, and it is not used to the limitation present invention.
Above and other technical characteristic and beneficial effect, will in conjunction with the embodiments and accompanying drawing 3- Fig. 4 adds to field plate of the invention
The protection ring structure of field limiting ring is described in detail.
Fig. 3 is referred to, Fig. 3 is the protection ring structural section schematic diagram of specific embodiment field plate of the invention plus field limiting ring.
For sake of convenience, in an embodiment of the present invention, the protection ring outside device region 9 only includes two P+ type injection diffuser rings 5
With an equal potential belt 4, in other embodiments, P+ type injection diffuser ring 5 can according to set the need for pressure-resistant 3,4,5 or
It is more, will not be repeated here.
As shown in figure 3, being with prior art institute application structure identical：The protection ring structure includes n type single crystal silicon substrate
3rd, the device region 9 in n type single crystal silicon substrate 3, the oxide layer 1 with interruption on the surface of n type single crystal silicon substrate 3 and gold are embedded in
Category field plate 2；Metal field plate 2 is partially covered on the surface and oxide layer 1 of the n type single crystal silicon substrate 3 for exposing.Each device region
9 protection ring structure injects diffuser ring 5 and an equal potential belt 4 by 2 P+ types being embedded in n type single crystal silicon substrate 3, and with device
Area 9 is zone line around distribution.Preferably, the thickness of oxide layer 1 is more than 1 micron.
P+ type injection diffuser ring 5 close to device region 9 is nullring, the connecting to neutral when device region 9 works；Another P+ type is injected
Diffuser ring 5, with nullring as zone line, and is surrounded on the outer ring of nullring, is suspended when device region 9 works；N+ injection diffusions etc.
Position ring 4 is surrounded on the outer ring that P+ type injects diffuser ring 5, and when device region 9 works, equal potential belt 4 connects high pressure or suspension.
It is with prior art institute application structure is differed：Present invention includes complete depletion of N-type under zero-bias
Complete depletion of p-type injection diffuser ring 7 under injection diffuser ring 6 and zero-bias, to produce an outwardly directed and direction and surface
The opposite electric field of electric field.Wherein, N-type injection diffuser ring 6 is embedded in the ring of P+ type injection diffuser ring 5, to provide positive charge；And
P-type injects diffuser ring 7, is embedded in n type single crystal silicon substrate 3, also, between two P+ type injection diffuser rings 5, or, position
Injected between diffuser ring 5 and equal potential belt 4 in P+ type, to provide negative electrical charge.
Further, complete depletion of N-type injects complete depletion of p-type injection under diffuser ring 6 and zero-bias under zero-bias
Diffuser ring 7 is paired appearance, it is preferable that inject diffuser ring 6, each two P+ comprising N-type in each P+ type injection diffuser ring 5
Between type injection diffuser ring 5, and between P+ type injection diffuser ring 5 and equal potential belt 4, a p-type injection diffuser ring 7 is respectively provided with.
It is emphasized that p-type injection diffuser ring 7 must be in the outside of Metal field plate 1, so, there is provided negative electrical charge just may be used
All to point to the electric field of equal potential belt for producing, otherwise can cancel out each other.In addition, N-type injection diffuser ring 6 must completely depleted
Positive charge can be provided, equally, p-type injection diffuser ring 7 must be completely depleted, could provide negative electrical charge.
As can be seen that N-type injection diffuser ring 6 and two P+ type injection diffuser rings 5 that P+ type injection diffuser ring 5 area introduces
P-type injection diffuser ring 7 between area is apart from nearer, and additional electric field is stronger.Shorten N-type injection diffuser ring 6 and P as far as possible in the design
The distance between the two regions of type injection diffuser ring 7.
In some embodiments of the invention, N-type injection diffuser ring 6 is located at P+ type injection diffuser ring（5）It is interior and lean on
Near-ring outer boundaries.Further, p-type injection diffuser ring 7 is close to the inner ring border that diffuser ring 5 is injected positioned at P+ type, and, P+
Type injects the p-type injection diffuser ring 7 set between diffuser ring 5 and equal potential belt 4, is injected in diffuser ring 5 and equal potential belt 4 positioned at P+ type
Between.
It is well known that the electric charge number in the N areas of P+ type ring region introducing is more, in the n type single crystal silicon between P+ type ring region
The electric charge number of p type island region is more, and additional electric field is stronger.Therefore the area in the two regions is increased as far as possible in the design, in reality
Design in, typically by N-type injection diffuser ring 6 base try one's best be designed to and P+ type injection diffuser ring 5 in depletion region border
Base is concordant.And, completely depleted because needing, doping can not be very high, therefore, N-type injection diffuser ring 6 is that N-type injection is gently mixed
Miscellaneous diffusion region.P-type injection diffuser ring 7 is that p-type injection is lightly doped diffusion region.
In some embodiments of the invention, the sectional area of p-type injection diffuser ring 7 is less than or equal to N-type injection diffuser ring 6
Sectional area.
Fig. 4 is referred to, Fig. 4 is the schematic diagram after field limiting ring structure of the present invention pressurizes in oxidizing process；Wherein, fine dotted line
Be depletion region on the border of p-type ring, chain-dotted line is border of the depletion region in NXing Qingcan areas.As illustrated, due to additional electric field
Influence, comparison diagram 2 be can see, and silicon silicon oxide interface depletion region boundary is elapsed toward outside, i.e., protection ring structure of the invention draws
Positive and negative charge is entered, there is provided point to the electric field of equal potential belt 4, the direction of the electric field is with surface field conversely, it is possible thereby to reducing
Surface field, increases breakdown voltage.
In one embodiment of the invention, above-mentioned high tension apparatus protect the manufacture method of ring structure, comprise the following steps：
Step S01：A thin layer oxide layer is grown on zone-melted silicon single crystal, the oxygen with interruption is formed on silicon single crystal upper surface
Change layer；
Step S02：Photoetching N-type injection diffusion ring region, injects N-type impurity；Photoetching p-type injection diffusion ring region, injects P
Type impurity；Photoetching equipotential ring region, injects N-type impurity again；
Step S03：Growth field oxide, make Metal field plate be partially covered on the n type single crystal silicon substrate for exposing surface and
In oxide layer；
Step S04：Lithographic device area；
Step S05：Photoetching multiple P+ type injection diffusion ring region, and P+ type impurity is injected to form P+ type injection diffusion
Ring, remove photoresist pusher trap；
Step S06：Metal deposit is etched, passivation layer precipitation etching；
Step S07：Thinning back side, implanted dopant is simultaneously activated, back metal deposition.
In sum, protection ring structure of the invention has drawn to enter complete depletion of N or P-type silicon, there is provided with surface field side
To opposite electric field, to weaken the surface field for causing punch through, breakdown voltage is improve.Therefore, in the feelings of identical pressure voltage
Under condition, field plate extra show limiting ring structure of the invention not only reduces the number of ring, saves area, meanwhile, also reduce in oxidation
The influence of positive charge in technique to breakdown voltage.
Above-described is only embodiments of the invention, and the embodiment simultaneously is not used to limit patent protection model of the invention
Enclose, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in this hair
In bright protection domain.
Claims (9)
1. the protection ring structure of a kind of high tension apparatus, it includes：
N type single crystal silicon substrate (3), in its surface with the oxide layer (1) of interruption；
Metal field plate (2), it is partially covered on the surface and oxide layer (1) of the n type single crystal silicon substrate (3) exposed,
Device region (9), is embedded in n type single crystal silicon substrate (3)；
Multiple P+Type injects diffuser ring (5), is embedded in the n type single crystal silicon substrate (3), wherein, close to the P of the device region (9)+It is nullring that type injects diffuser ring (5), and is that zone line surround distribution with the device region (9), in the device region (9) work
It is grounded when making；Other P+Type injects diffuser ring (5), is suspended when the device region (9) works, and with nullring as zone line,
One ring is surrounded on the outer ring of another ring；
Equal potential belt (4), is embedded in the n type single crystal silicon substrate (3), and be surrounded on the multiple P+Outside type injection diffuser ring (5)
Enclose；
It is characterized in that：
Complete depletion of N-type injects diffuser ring (6) under zero-bias, is embedded in the P+In the ring of type injection diffuser ring (5), to provide
Positive charge；And
Complete depletion of p-type injects diffuser ring (7) under zero-bias, is embedded in n type single crystal silicon substrate (3), positioned at two P+Type
Injection diffuser ring (5) or the P+Type is injected between diffuser ring (5) and the equal potential belt (4), and in the Metal field plate (2)
Outside, to provide negative electrical charge, so as to produce an outwardly directed and direction electric field opposite with surface field.
2. protection ring structure according to claim 1, it is characterised in that the N-type injects diffuser ring (6) positioned at the P+
Type is injected in diffuser ring (5) and near ring outer boundaries.
3. protection ring structure according to claim 2, it is characterised in that the base of N-type injection diffuser ring (6) and institute
State P+The depletion region border base that type is injected in diffuser ring (5) is concordant.
4. protection ring structure according to claim 1, it is characterised in that it is N-type injection that the N-type injects diffuser ring (6)
Diffusion region is lightly doped.
5. protection ring structure according to claim 1, it is characterised in that it is p-type injection that the p-type injects diffuser ring (7)
Diffusion region is lightly doped.
6. protection ring structure according to claim 1, it is characterised in that the p-type injects diffuser ring (7) positioned at the P+
Type injects diffuser ring (5) outward, and near the P+The inner ring border of type injection diffuser ring (5) is set.
7. protection ring structure according to claim 1, it is characterised in that the sectional area of p-type injection diffuser ring (7) is small
In the sectional area equal to N-type injection diffuser ring (6).
8. protection ring structure according to claim 1, it is characterised in that the thickness of the oxide layer (1) is micro- more than 1
Rice.
9. the method that high tension apparatus described in a kind of manufacturing claims 1 protect ring structure, it is characterised in that comprise the following steps：
Step S01：The molten n type single crystal silicon Grown a thin layer oxide layer in area, forms tool in n type single crystal silicon substrate top surface
There is the oxide layer of interruption；
Step S02：Photoetching N-type injection diffusion ring region, injects N-type impurity；Photoetching p-type injection diffusion ring region, implanting p-type is miscellaneous
Matter；Photoetching equipotential ring region, injects N-type impurity again；
Step S03：Growth field oxide；
Step S04：Lithographic device area；
Step S05：Photoetching multiple P+ type injection diffusion ring region, and P+ type impurity is injected to form P+ type injection diffuser ring, go
Glue pusher trap；
Step S06：Metal deposit is etched, and Metal field plate is partially covered on surface and the oxidation of the n type single crystal silicon substrate for exposing
On layer, passivation layer precipitation etching；
Step S07：Thinning back side, implanted dopant is simultaneously activated, back metal deposition.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210405330.XA CN102969343B (en) | 2012-10-22 | 2012-10-22 | The protection ring structure and its manufacture method of a kind of high tension apparatus |
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| CN201210405330.XA CN102969343B (en) | 2012-10-22 | 2012-10-22 | The protection ring structure and its manufacture method of a kind of high tension apparatus |
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| CN103367398B (en) * | 2013-07-23 | 2017-03-15 | 上海北车永电电子科技有限公司 | Terminal protection ring and its manufacture method |
| CN106024779B (en) * | 2016-07-14 | 2018-12-21 | 中国电子科技集团公司第五十八研究所 | A kind of two-way high voltage bearing ESD protective device structure |
| CN114220842B (en) * | 2021-12-15 | 2025-02-28 | 株洲中车时代半导体有限公司 | Junction termination of power transistor |
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| CN1979818A (en) * | 2005-12-06 | 2007-06-13 | 丰田自动车株式会社 | Semiconductor devices and manufacturing method thereof |
| CN201829504U (en) * | 2010-10-15 | 2011-05-11 | 无锡新洁能功率半导体有限公司 | Insulated gate bipolar transistor (IGBT) with improved terminal |
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| JP4736180B2 (en) * | 2000-11-29 | 2011-07-27 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| TW466747B (en) * | 2000-12-14 | 2001-12-01 | United Microelectronics Corp | Using inner field ring and complex multiple field plates to reduce surface breakdown of power LDMOSFET |
| JP2009289904A (en) * | 2008-05-28 | 2009-12-10 | Toshiba Corp | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1979818A (en) * | 2005-12-06 | 2007-06-13 | 丰田自动车株式会社 | Semiconductor devices and manufacturing method thereof |
| CN201829504U (en) * | 2010-10-15 | 2011-05-11 | 无锡新洁能功率半导体有限公司 | Insulated gate bipolar transistor (IGBT) with improved terminal |
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