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CN102961891B - Sublimating crystallizing device - Google Patents

Sublimating crystallizing device Download PDF

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CN102961891B
CN102961891B CN201210467753.4A CN201210467753A CN102961891B CN 102961891 B CN102961891 B CN 102961891B CN 201210467753 A CN201210467753 A CN 201210467753A CN 102961891 B CN102961891 B CN 102961891B
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crystallization
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sublimation
distillation
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CN102961891A (en
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于秋硕
马晓迅
徐龙
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Northwest University
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Abstract

本发明公开了一种升华结晶装置,包括恒温管、加热层、温度控制器和放气管,其活动的载料管置于恒温管的升华区,载料管内壁固定设置有测温管,与温度控制器连接的热电偶置于测温管内,恒温管的结晶区设置有结晶管,结晶管上部为平面结构,内部通有恒温循环液介质用于控制结晶管外表面温度。本发明可实现载气流升华结晶、真空升华结晶和目标杂质干预的升华结晶三种过程,操作简便,测温、控温准确,可以精确调节结晶的过饱和度,所得产品易移取,便于分析,有利于开发新的多晶型产品,研究结晶成核及生长机理。

The invention discloses a sublimation crystallization device, which comprises a constant temperature tube, a heating layer, a temperature controller and an air release tube. The movable material loading tube is placed in the sublimation area of the constant temperature tube, and the inner wall of the material loading tube is fixedly provided with a temperature measuring tube. The thermocouple connected to the temperature controller is placed in the temperature measuring tube. The crystallization area of the constant temperature tube is provided with a crystallization tube. The upper part of the crystallization tube is a planar structure, and a constant temperature circulating liquid medium is used to control the temperature of the outer surface of the crystallization tube. The invention can realize the three processes of sublimation crystallization with carrier gas flow, vacuum sublimation crystallization and target impurity intervention sublimation crystallization, easy to operate, accurate temperature measurement and temperature control, can precisely adjust the supersaturation of crystallization, and the obtained product is easy to pipet and analyze , which is conducive to the development of new polymorphic products and the study of crystallization nucleation and growth mechanisms.

Description

一种升华结晶装置A kind of sublimation crystallization device

技术领域 technical field

本发明涉及一种升华结晶装置,属于化工装备技术领域。 The invention relates to a sublimation crystallization device, belonging to the technical field of chemical equipment.

背景技术 Background technique

升华结晶不同于溶液结晶,结晶过程较少受到其他分子的影响,可直接由气态变为固态晶体。有些物质可通过升华结晶得以纯化或转化为其他结晶方式所不能获得的多晶型产品。 Sublimation crystallization is different from solution crystallization. The crystallization process is less affected by other molecules, and can directly change from gaseous state to solid crystal. Some substances can be purified by sublimation crystallization or converted into polymorphic products that cannot be obtained by other crystallization methods.

目前实验中的升华装置存在以下不足:(1)装置设计简单,仅仅对升华区进行适当地温度控制,缺乏对结晶区域精细的温度调节;(2)未考虑过饱和度对升华结晶形貌及晶型的影响;(3)结晶产品移取不方便,移取过程易造成晶体形貌破坏,不利于产品的进一步分析测试。 The sublimation device in the current experiment has the following deficiencies: (1) The design of the device is simple, only the temperature of the sublimation zone is properly controlled, and the fine temperature adjustment of the crystallization zone is lacking; (2) The effect of supersaturation on the sublimation crystal morphology and (3) It is inconvenient to pipette the crystalline product, and the pipetting process can easily cause damage to the crystal morphology, which is not conducive to further analysis and testing of the product.

随着对多晶型现象的广泛研究,升华结晶中外来目标杂质分子或结晶基质对晶习及晶型的影响越来越受到重视。外来杂质分子可以选择性地吸附到某些特定晶面上,从而改变晶体生长速率,最终引起晶习的改变;杂质分子也可以选择性地吸附到某些特定晶型上,抑制该晶型的生长,最终改变产品中不同晶型的数量比例。目前关于杂质分子对结晶过程的影响研究主要集中在溶液结晶领域,升华结晶过程则被较少关注,现有的升华装置也未考虑如何定量地将目标杂质分子以气态形式引入到结晶体系及升华结晶的沉降基质对结晶产品的影响。 With the extensive research on polymorphism, more and more attention has been paid to the influence of foreign target impurity molecules or crystallization matrix on crystal habit and crystal form in sublimation crystallization. Foreign impurity molecules can be selectively adsorbed on some specific crystal faces, thereby changing the crystal growth rate, and finally causing changes in the crystal habit; impurity molecules can also be selectively adsorbed on certain specific crystal forms, inhibiting the growth of the crystal form. Growth, ultimately changing the quantitative ratio of different crystalline forms in the product. At present, the research on the influence of impurity molecules on the crystallization process is mainly concentrated in the field of solution crystallization, and the sublimation crystallization process has received less attention. Effect of crystallized settling matrix on crystallized product.

发明内容 Contents of the invention

本发明的目的是提供一种温控精细、方便产品移取和开展科学实验的升华结晶装置,以解决现有结晶装置中存在的结晶区域温控不精细、结晶产品移取不方便、无法引入目标杂质分子及改变结晶基质的不足。 The purpose of the present invention is to provide a sublimation crystallization device with fine temperature control, convenient product transfer and scientific experiment, so as to solve the existing problems in the existing crystallization device, such as imprecise temperature control in the crystallization area, inconvenient transfer of crystallized products, and inability to introduce Target impurity molecules and alter crystal matrix deficiencies.

本发明实现过程如下: The realization process of the present invention is as follows:

一种升华结晶装置,包括恒温管、加热层、温度控制器和放气管,活动的载料管(7)置于恒温管(14)的升华区,载料管(7)内壁固定设置有测温管(5),热电偶置于测温管(5)内,热电偶与温度控制器(4)连接;恒温管(14)的结晶区设置有结晶管(15),结晶管(15)上部为平面结构,结晶管(15)内部通有恒温循环液介质用于控制结晶管(15)外表面温度。 A sublimation crystallization device, including a constant temperature tube, a heating layer, a temperature controller and an air release tube. The movable loading tube (7) is placed in the sublimation zone of the constant temperature tube (14), and the inner wall of the loading tube (7) is fixed with a measuring The temperature tube (5), the thermocouple is placed in the temperature measuring tube (5), and the thermocouple is connected to the temperature controller (4); the crystallization area of the thermostat tube (14) is provided with a crystallization tube (15), and the crystallization tube (15) The upper part is a planar structure, and a constant temperature circulating liquid medium is passed inside the crystallization tube (15) to control the temperature of the outer surface of the crystallization tube (15).

本发明的第一种实现方式是:恒温管(14)升华区的开口端设置有密封橡胶塞(13)。 The first implementation mode of the present invention is: the opening end of the sublimation zone of the thermostatic tube (14) is provided with a sealing rubber plug (13).

本发明的第二种实现方式是:载气钢瓶(8)通过导管连通至恒温管(14)的升华区。 The second implementation mode of the present invention is: the carrier gas cylinder (8) is connected to the sublimation zone of the thermostatic tube (14) through a conduit.

本发明的第三种实现方式是:物料储存器(2)通过导管连通至恒温管(14)的升华区,物料储存器(2)置于恒温槽(1)中。 The third implementation mode of the present invention is: the material storage (2) is connected to the sublimation zone of the thermostatic tube (14) through a conduit, and the material storage (2) is placed in the thermostatic bath (1).

本发明循环恒温槽(10)内的恒温循环液介质通过进液口(11)通入结晶管(15),从出液口(12)流回循环恒温槽(10)中。 The constant temperature circulating liquid medium in the circulating constant temperature tank (10) of the present invention is passed into the crystallization tube (15) through the liquid inlet (11), and flows back into the circulating constant temperature tank (10) from the liquid outlet (12).

本发明结晶管(15)上部为平面结构,放置有玻璃片、金属片、硅片或塑料片。 The upper part of the crystallization tube (15) of the present invention is a planar structure, and a glass sheet, a metal sheet, a silicon sheet or a plastic sheet is placed thereon.

本发明的优点及积极效果:1、本发明可通过改变连接方式方便实现载气流升华结晶、真空升华结晶和目标杂质干预的升华结晶三种过程。2、使用活动载料管可方便加入或移走物料,及对物料的质量变化进行测量,计算升华速率,实验结束后便于清洗处理。3、载料管内壁固定设置有测温管,热电偶置于测温管内,这种连接方式实现了对物料温度的近距离快速测量,所测温度更接近物料的真实温度数值。4、使用恒温循环液介质对结晶管精确温控,实现了对升华结晶过饱和度的控制,可由此获得在不同过饱和度下的结晶产品,有利于开发新的多晶型产品,便于对结晶成核及生长机理展开科学研究。5、结晶管上部平面结构设计可满足放置不同材质的薄片状结晶基质,以研究不同基质对结晶过程的影响,直接对薄片上的升华结晶产品进行显微镜观测则避免了再次转移产品的繁琐及由此带来的形貌破坏。 Advantages and positive effects of the present invention: 1. The present invention can conveniently realize three processes of carrier gas sublimation crystallization, vacuum sublimation crystallization and target impurity intervention sublimation crystallization by changing the connection mode. 2. The use of movable loading tube can easily add or remove materials, measure the quality change of materials, calculate the sublimation rate, and facilitate cleaning after the experiment. 3. The inner wall of the loading tube is fixed with a temperature measuring tube, and the thermocouple is placed in the temperature measuring tube. This connection method realizes the close-range and rapid measurement of the material temperature, and the measured temperature is closer to the real temperature value of the material. 4. Using the constant temperature circulating liquid medium to precisely control the temperature of the crystallization tube realizes the control of the supersaturation of sublimation crystallization, and thus obtains crystallization products at different supersaturations, which is conducive to the development of new polymorphic products and is convenient for Conduct scientific research on crystallization nucleation and growth mechanism. 5. The planar structure design of the upper part of the crystallization tube can meet the needs of placing thin-sheet crystal substrates of different materials to study the influence of different substrates on the crystallization process. Direct microscope observation of the sublimation crystal products on the thin slices avoids the tedious and troublesome process of transferring products again. This results in damage to the shape.

附图说明 Description of drawings

图1为真空升华结晶装置结构示意图。图中4-温度控制器,5-测温管,6-加热层,7-载料管,9-放气管,10-循环恒温槽,11-进液口,12-出液口,13-橡胶塞,14-恒温管,15-结晶管; Figure 1 is a schematic diagram of the structure of a vacuum sublimation crystallization device. In the figure, 4-temperature controller, 5-temperature measuring tube, 6-heating layer, 7-loading tube, 9-venting tube, 10-circulating constant temperature tank, 11-liquid inlet, 12-liquid outlet, 13- Rubber stopper, 14-thermostatic tube, 15-crystallization tube;

图2为载气流升华结晶装置结构示意图。图中 4-温度控制器,5-测温管,6-加热层,7-载料管,8-载气钢瓶,9-放气管,10-循环恒温槽,11-进液口,12-出液口,13-橡胶塞,14-恒温管,15-结晶管; Fig. 2 is a schematic diagram of the structure of a carrier gas sublimation crystallization device. In the figure 4-temperature controller, 5-temperature measuring tube, 6-heating layer, 7-loading tube, 8-carrier gas cylinder, 9-release tube, 10-circulating constant temperature tank, 11-liquid inlet, 12- Liquid outlet, 13-rubber plug, 14-thermostatic tube, 15-crystallization tube;

图3为目标杂质干预的升华结晶装置结构示意图。图中 1-恒温槽, 2-物料储存器,4-温度控制器,5-测温管,6-加热层,7-载料管,9-放气管,10-循环恒温槽,11-进液口,12-出液口,13-橡胶塞,14-恒温管,15-结晶管; Fig. 3 is a schematic structural diagram of a sublimation crystallization device intervened by target impurities. In the figure 1-constant temperature tank, 2-material storage, 4-temperature controller, 5-temperature measuring tube, 6-heating layer, 7-loading tube, 9-venting tube, 10-circulating constant temperature tank, 11-inlet Liquid port, 12-liquid outlet, 13-rubber plug, 14-thermostatic tube, 15-crystallization tube;

图4为丁二酸真空升华结晶照片(升华180度,结晶区95度); Figure 4 is a photo of succinic acid vacuum sublimation crystallization (sublimation 180 degrees, crystallization area 95 degrees);

图5为芘在氮气载气吹扫下玻璃上的结晶(升华区140度,结晶区35度); Figure 5 shows the crystallization of pyrene on glass under nitrogen carrier gas purging (sublimation zone 140 degrees, crystallization zone 35 degrees);

图6为芘在氮气载气吹扫下铝箔上的结晶(升华区140度,结晶区35度); Figure 6 shows the crystallization of pyrene on aluminum foil under nitrogen carrier gas purging (sublimation zone 140 degrees, crystallization zone 35 degrees);

图7在异丙醇分子存在下结晶升华区180度,结晶区95度)。 Figure 7 in the presence of isopropanol molecules in the crystallization sublimation zone 180 degrees, crystallization zone 95 degrees).

具体实施方式 Detailed ways

为了使本发明的内容更容易被清楚理解,下面根据本发明的具体实施例并结合附图对本发明做进一步详细的说明。 In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below according to specific embodiments of the present invention and in conjunction with the accompanying drawings.

升华结晶装置,活动的载料管7置于恒温管14的升华区,载料管7内壁固定设置有测温管5,热电偶置于测温管5内,热电偶与温度控制器4连接;恒温管14的结晶区设置有结晶管15,结晶管15上部为平面结构,结晶管15内部通有恒温循环液介质用于控制结晶管15外表面温度。 Sublimation crystallization device, the movable loading tube 7 is placed in the sublimation zone of the constant temperature tube 14, the inner wall of the loading tube 7 is fixed with a temperature measuring tube 5, the thermocouple is placed in the temperature measuring tube 5, and the thermocouple is connected to the temperature controller 4 The crystallization zone of the thermostatic tube 14 is provided with a crystallization tube 15, and the upper part of the crystallization tube 15 is a planar structure, and the inside of the crystallization tube 15 has a constant temperature circulating liquid medium for controlling the temperature of the crystallization tube 15 outer surfaces.

具体地说,本发明有以下三种实现方式: Specifically, the present invention has the following three implementations:

1、本发明所述恒温管14可直接与橡胶塞密闭相连,不与物料储存器2相连,这时所述放气管9与真空泵相连,构成真空升华结晶装置。 1. The thermostatic tube 14 of the present invention can be directly connected to the rubber stopper in an airtight manner, and not connected to the material storage 2. At this time, the air release pipe 9 is connected to a vacuum pump to form a vacuum sublimation crystallization device.

2、本发明所述恒温管14可与载气钢瓶8相连,所述载气钢瓶8为惰性气体钢瓶,放气管9与大气相通,构成载气流升华结晶装置。 2. The thermostatic tube 14 of the present invention can be connected with the carrier gas cylinder 8, the carrier gas cylinder 8 is an inert gas cylinder, and the gas release pipe 9 communicates with the atmosphere to form a carrier gas sublimation crystallization device.

3、本发明所述物料储存器2为存有液态目标杂质溶剂的圆柱形容器(保持横截面大小上下不变),这时所述放气管9与真空泵相连,通过恒温槽1控温及流量调节器实现匀速地向结晶体系引入目标杂质分子,构成目标杂质干预的升华结晶装置。 3. The material storage container 2 of the present invention is a cylindrical container containing a liquid target impurity solvent (keep the cross-sectional size unchanged up and down). At this time, the air release pipe 9 is connected to the vacuum pump, and the temperature and flow rate are controlled by the constant temperature tank 1. The regulator realizes the introduction of target impurity molecules into the crystallization system at a uniform speed, constituting a sublimation crystallization device intervened by target impurities.

所述载料管7外径略小于恒温管14内径,以使载料管7置于恒温管14内并保证气流全部经过载料管7。 The outer diameter of the loading tube 7 is slightly smaller than the inner diameter of the thermostatic tube 14, so that the loading tube 7 is placed in the thermostatic tube 14 and ensure that all air flows through the loading tube 7.

实施例1:真空升华结晶 Example 1: Vacuum sublimation crystallization

如图1所示,将称重约1g β-丁二酸晶体粉末装入载料管7,称总重为m0,将热电偶放入测温管5,将载料管7移至恒温管14升华区的中间部位,盖好橡胶塞13,将玻璃薄片置于结晶管15上方,调节温度控制器4,设定加热温度180℃,开启连接放气管9的真空泵,开启循环恒温槽10,保持到设定温度95℃,载料管7中的物料在减压条件下受热升华为气体,热气流流经结晶管15上方玻璃薄片时,热气流温度下降,所形成过饱和蒸汽慢慢在玻璃薄片上析出晶核,晶核逐渐长大。升华一段时间t后,关闭真空泵、循环恒温槽10、温度控制器4。取出结晶管15上方放置的玻璃薄片,置于显微镜下观测,得到晶体为针状(图4),通过XRD分析晶型为α晶型,晶型发生改变。取出载料管7称重为m1,可得升华速率=(m0-m1)/t。 As shown in Figure 1, put about 1g of β-succinic acid crystal powder into the loading tube 7, weigh the total weight as m0, put the thermocouple into the temperature measuring tube 5, and move the loading tube 7 to the thermostatic tube 14 In the middle of the sublimation zone, cover the rubber stopper 13, place the glass sheet above the crystallization tube 15, adjust the temperature controller 4, set the heating temperature to 180°C, turn on the vacuum pump connected to the vent pipe 9, and turn on the circulation constant temperature tank 10, Keeping the set temperature at 95°C, the material in the loading tube 7 is heated and sublimated into a gas under reduced pressure. When the hot air flows through the glass sheet above the crystallization tube 15, the temperature of the hot air drops, and the formed supersaturated steam slowly Crystal nuclei are precipitated on the glass flakes, and the crystal nuclei grow gradually. After sublimation for a period of time t, turn off the vacuum pump, the circulation constant temperature tank 10, and the temperature controller 4. The thin glass slice placed above the crystallization tube 15 was taken out and observed under a microscope, the obtained crystal was needle-shaped ( FIG. 4 ), and the crystal form was α crystal form by XRD analysis, and the crystal form changed. Take out the loading tube 7 and weigh it as m1, and the sublimation rate = (m0-m1)/t can be obtained.

实施例2:载气流升华结晶 Example 2: Carrier gas flow sublimation crystallization

如图2所示,将称重约1g芘晶体粉末装入载料管7,称总重为m0,将热电偶放入测温管5,将载料管7移至恒温管14升华区的中间部位,盖好橡胶塞13,连接好载气钢瓶8(氮气),固定氮气流量20 ml/min。将玻璃薄片或铝箔置于结晶管15上方,调节温度控制器4,设定加热温度140℃,放气管9与大气相连,开启循环恒温槽10,保持到设定温度35℃,调节流量调节器,载料管7中的物料在氮气流下受热升华为气体,蒸汽流经结晶管15上方玻璃薄片或铝箔时,热气流温度下降,所形成过饱和蒸汽慢慢在玻璃薄片上析出晶核,晶核逐渐长大。升华一段时间t后,关闭循环恒温槽10、温度控制器4。取出结晶管15上方放置的玻璃薄片或铝箔,置于显微镜下观测,在玻璃片上得到菱形片状晶体(图5),在铝箔上得到球形聚结体(图6),XRD分析表明晶型未发生变化。取出载料管7称重为m1,可得升华速率=(m0-m1)/t。 As shown in Figure 2, put about 1g of pyrene crystal powder into the loading tube 7, weigh the total weight as m0, put the thermocouple into the temperature measuring tube 5, and move the loading tube 7 to the sublimation zone of the thermostatic tube 14 Cover the middle part with the rubber stopper 13, connect the carrier gas cylinder 8 (nitrogen), and fix the nitrogen flow rate at 20 ml/min. Place the glass flake or aluminum foil above the crystallization tube 15, adjust the temperature controller 4, set the heating temperature to 140°C, connect the air release pipe 9 to the atmosphere, open the circulation constant temperature tank 10, keep the set temperature at 35°C, and adjust the flow regulator The material in the loading tube 7 is heated and sublimated into a gas under a nitrogen flow, and when the steam flows through the glass sheet or aluminum foil above the crystallization tube 15, the temperature of the hot air flow drops, and the formed supersaturated steam slowly precipitates crystal nuclei on the glass sheet, and the crystallization The nucleus grows gradually. After sublimation for a period of time t, the circulation constant temperature tank 10 and the temperature controller 4 are closed. Take out the glass flake or aluminum foil placed above the crystallization tube 15, place it under a microscope for observation, and get diamond-shaped flaky crystals on the glass flake (Figure 5), and spherical agglomerates on the aluminum foil (Figure 6). XRD analysis shows that the crystal form is not change. Take out the loading tube 7 and weigh it as m1, and the sublimation rate = (m0-m1)/t can be obtained.

实施例3:目标杂质干预的升华结晶 Example 3: Sublimation crystallization intervened by target impurities

如图3所示,将称重约1g β-丁二酸晶体粉末装入载料管7,称总重为m0,将热电偶放入测温管5,将载料管7移至恒温管14升华区的中间部位,盖好橡胶塞13,连接好物料储存器2(目标杂质为异丙醇溶剂),开启恒温槽1维持一定温度以确保异丙醇的蒸发压不变,将玻璃薄片置于结晶管15上方,调节温度控制器4,设定加热温度180℃,开启连接放气管9的真空泵,维持一定的真空度,保证流量调节器的流量固定。开启循环恒温槽10,保持到设定温度95℃,调节流量调节器,载料管7中的物料在氮气流下受热升华为气体,蒸汽流经结晶管15上方的玻璃薄片时,热气流温度下降,所形成过饱和蒸汽慢慢在玻璃薄片上析出晶核,晶核逐渐长大。升华一段时间t后,关闭真空泵、循环恒温槽10、温度控制器4。取出结晶管15上方放置的玻璃薄片,置于显微镜下观测,得到针状晶体(图7), XRD分析表明晶型未发生变化。取出载料管7称重为m1,可得升华速率=(m0-m1)/t。 As shown in Figure 3, put about 1g of β-succinic acid crystal powder into the loading tube 7, weigh the total weight as m0, put the thermocouple into the temperature measuring tube 5, and move the loading tube 7 to the thermostatic tube 14 In the middle part of the sublimation zone, cover the rubber stopper 13, connect the material storage 2 (the target impurity is isopropanol solvent), open the constant temperature tank 1 to maintain a certain temperature to ensure that the evaporation pressure of isopropanol remains constant, and place the glass sheet Place it above the crystallization tube 15, adjust the temperature controller 4, set the heating temperature to 180°C, turn on the vacuum pump connected to the air release pipe 9, maintain a certain degree of vacuum, and ensure that the flow rate of the flow regulator is fixed. Open the circulating constant temperature tank 10, keep the set temperature at 95°C, adjust the flow regulator, the material in the loading tube 7 is heated and sublimated into a gas under the nitrogen flow, and when the steam flows through the glass sheet above the crystallization tube 15, the temperature of the hot air flow drops , the formed supersaturated steam slowly precipitates crystal nuclei on the glass sheet, and the crystal nuclei grow up gradually. After sublimation for a period of time t, turn off the vacuum pump, the circulation constant temperature tank 10, and the temperature controller 4. The thin glass slice placed above the crystallization tube 15 was taken out and observed under a microscope to obtain needle-shaped crystals ( FIG. 7 ). XRD analysis showed that the crystal form had not changed. Take out the loading tube 7 and weigh it as m1, and the sublimation rate = (m0-m1)/t can be obtained.

Claims (6)

1. a distillation crystallization apparatus, comprise constant warm tube, zone of heating, temperature controller and bleeder pipe, it is characterized in that: movable material containing pipe (7) is placed in the distillation district of constant warm tube (14), material containing pipe (7) inwall is fixedly installed temperature tube (5), the thermocouple be connected with temperature controller (4) is placed in temperature tube (5), the crystal region of constant warm tube (14) is provided with crystallizer (15), crystallizer (15) top is planar structure, and inside is connected with constant temperature circulating liquid medium for crystallization control pipe (15) hull-skin temperature; Material storage storage (2) is communicated to the distillation district of constant warm tube (14) by conduit, and the material storage storage (2) for storing liquid target impurity solvent is placed in thermostat (1).
2. distillation crystallization apparatus according to claim 1, is characterized in that: described material containing pipe (7) external diameter is slightly less than constant warm tube (14) internal diameter, to be placed in constant warm tube (14) and to ensure air-flow all through material containing pipe (7) to make material containing pipe (7).
3. distillation crystallization apparatus according to claim 1, is characterized in that: the openend in constant warm tube (14) distillation district is provided with sealing rubber plug (13).
4. distillation crystallization apparatus according to claim 1, is characterized in that: material storage storage (2) is hydrostatic column.
5. according to one of any described distillation crystallization apparatus of Claims 1-4, it is characterized in that: the constant temperature circulating liquid medium in circulation thermostat (10) passes into crystallizer (15) by inlet (11), flows back to circulation thermostat (10) from liquid outlet (12).
6. distillation crystallization apparatus according to claim 5, is characterized in that: crystallizer (15) top is planar structure, is placed with sheet glass, sheet metal, silicon chip or plastic sheet.
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