[go: up one dir, main page]

CN102955741A - Memory device and writing method thereof - Google Patents

Memory device and writing method thereof Download PDF

Info

Publication number
CN102955741A
CN102955741A CN2011102522996A CN201110252299A CN102955741A CN 102955741 A CN102955741 A CN 102955741A CN 2011102522996 A CN2011102522996 A CN 2011102522996A CN 201110252299 A CN201110252299 A CN 201110252299A CN 102955741 A CN102955741 A CN 102955741A
Authority
CN
China
Prior art keywords
page
data
block
memory device
management information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102522996A
Other languages
Chinese (zh)
Inventor
王金龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Novatek Microelectronics Corp
Original Assignee
Novatek Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novatek Microelectronics Corp filed Critical Novatek Microelectronics Corp
Priority to CN2011102522996A priority Critical patent/CN102955741A/en
Publication of CN102955741A publication Critical patent/CN102955741A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)

Abstract

一种存储器装置及其写入方法。存储器装置包括数据储存单元及管理单元。数据储存单元包括多个区块，且该多个区块当中每一者分别包括多个分页。管理单元根据管理信息找出分页，并根据管理信息将分页数据写入至分页，管理信息至少包括区块编号及分页编号。

Figure 201110252299

A memory device and a writing method thereof. The memory device includes a data storage unit and a management unit. The data storage unit includes a plurality of blocks, and each of the plurality of blocks includes a plurality of pages. The management unit finds the pages according to management information, and writes the page data into the pages according to the management information, wherein the management information includes at least a block number and a page number.

Figure 201110252299

Description

Storage arrangement and wiring method thereof
Technical field
The invention relates to a kind of storer, and particularly relevant for a kind of storage arrangement and wiring method thereof.
Background technology
Sheffer stroke gate (NAND) flash memory common in the flash memory comprises single-order storage element (Single-Level Cell, SLC) flash memory, multistage storage element (Multi-Level Cell, MLC) flash memory or three rank storage elements (Triple-Level Cell, TLC) flash memory.Flash memory is the unit of erasing take block as data.Flash memory comprises that several blocks and each block comprise several pagings.It must be sequentially to be write by paramount minute page number of low minute page number (page number) that conventional flash memory requires the write sequence of paging.
In the Data renewal mechanism of flash memory, in the time data need to being write to certain specific paging of certain block, must judge then whether this paging has had data writing, if this paging still is space state, then can directly these data be write.Otherwise, if this paging has had data, then can't take the method that directly overrides, and must carry out with the storage block of another blank the renewal of data.
Yet the Data Update of conventional flash memory must all be copied to the data of all page numbers before and after in the same block new block old data of erasing again.Thus, not only expend working time and can reduce serviceable life of flash memory.
Summary of the invention
The invention relates to a kind of storage arrangement and wiring method thereof.
According to an aspect of the present invention, a kind of storage arrangement is proposed.Storage arrangement comprises data storage element and administrative unit.Data storage element comprises that block and block comprise paging.Administrative unit is found out paging according to management information, and according to management information paged data is write to paging, and management information comprises block numbering (Block Number) and minute page number (Page Number) at least.
A kind of wiring method of storage arrangement is proposed according to a further aspect in the invention.The wiring method of storage arrangement comprises: find out the paging of the block of data storage element according to management information; And according to management information paged data is write to paging.
According on the other hand of the present invention, a kind of storage arrangement is proposed, comprising: a data storage element, comprise a plurality of physical blocks, respectively this physical blocks comprises a plurality of pagings; An and administrative unit, in order to one first paged data is write to a paging of one first physical blocks of this data storage element, and a paging that one second paged data is write to one second physical blocks of this data storage element, wherein this first paged data corresponds to identical logical blocks numbering with this second paged data system.
Propose a kind of wiring method of storage arrangement more on the other hand according to of the present invention, comprising: receive the first paged data and one second paged data corresponding to identical logical blocks numbering; This first paged data is write to a paging of one first physical blocks of a data storage element; An and paging that this second paged data is write to one second physical blocks of this data storage element.
For foregoing of the present invention can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Fig. 1 illustrates and is the schematic diagram according to the storage arrangement of the embodiment of the invention.
Fig. 2 illustrates and is the schematic diagram before the Data Update.
Fig. 3 illustrates and is the schematic diagram after the Data Update.
[main element label declaration]
10: storage arrangement
11: data storage element
12: administrative unit
121: data processing unit
122: memory manage unit
123: the management information record cell
Embodiment
Following embodiment provides a kind of storage arrangement and wiring method thereof.Storage arrangement comprises data storage element and administrative unit.Data storage element comprises that block and block comprise paging.Administrative unit is found out paging according to management information, and according to management information paged data is write to paging.
The wiring method of storage arrangement comprises: find out the paging of the block of data storage element according to management information; And according to management information paged data is write to paging.
Please be simultaneously with reference to Fig. 1, Fig. 2 and Fig. 3, Fig. 1 illustrates and is that the schematic diagram according to the storage arrangement of the embodiment of the invention, Fig. 2 illustrate and is that the schematic diagram before the Data Update, Fig. 3 illustrate and is the schematic diagram after the Data Update.Storage arrangement 10 comprises data storage element 11 and administrative unit 12.Storage arrangement 10 for example is nonvolatile memory, and nonvolatile memory for example is flash memory in one embodiment.To data storage element 11, and management information for example comprises block numbering (Block Number), minute page number (Page Number) to administrative unit 12 according to the management information data writing.More preferably, management information can also comprise multi-tiling addressing (Multi-Block Addressing, MBA) numbering.Data storage element 11 for example is Sheffer stroke gate (NAND) storage arrangement, and the Sheffer stroke gate storage arrangement for example is single-order storage element (Single-Level Cell, SLC) storage arrangement, multistage storage element (Multi-Level Cell, MLC) storage arrangement or three rank storage elements (Triple-Level Cell, TLC) storage arrangement.
Administrative unit 12 for example comprises memory manage unit 122 and management information record cell 123.In addition, administrative unit also can except administrative unit 122 and management information record cell 123, further comprise data processing unit 121.For convenience of description, it is that the administrative unit 12 that comprises data processing unit 121, memory manage unit 122 and management information record cell 123 is the example explanation that Fig. 1 illustrates.Data processing unit 121 is disassembled the raw data of wanting to write to data storage element 11 and is block data or paged data.Memory manage unit 122 provides block numbering and minute page number of corresponding block data or paged data.Management information record cell 123 is in order to records management information, and management information record cell 123 can be recorded in management information in the storage arrangement, for example (Spare) for subsequent use of storer district or other external memory storage.
Administrative unit 12 can determine different writing modes according to wanting varying in size of data writing.Equal a block length when wanting data writing, then administrative unit 12 according to management information in mode corresponding to block with data data writing storage element 11.For instance, the data of data number 0 equal a block length, and administrative unit 12 will write to corresponding to the data of data number 0 the 0th block according to management information.Similarly, data number 4 and 7 data equal respectively a block length, and administrative unit 12 will write to block according to management information and be numbered 4 and 7 block corresponding to the data of data number 4 and 7.The configuration of this kind data only needs a small amount of storer to represent, and data access speed faster.
When wanting data writing less than a block length, then administrative unit 12 according to management information in mode corresponding to paging with data data writing storage element 11.For instance, the data of data number 1 are less than a block length, and the data of data number 1 comprise paged data 1.0, paged data 1.1 and paged data 1.3.Administrative unit 12 is found out numbering 3 pagings of corresponding block numbering 1 according to management information, and paged data 1.3 is write to numbering 3 pagings of corresponding block numbering 1 according to management information.Administrative unit 12 is found out numbering 0 paging of corresponding block numbering 9 according to management information, and paged data 1.0 is write to numbering 0 paging of corresponding block numbering 9 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 9 according to management information, and paged data 1.0 is write to numbering 1 paging of corresponding block numbering 9 according to management information.
Key character that it should be noted that this embodiment is that the paged data that corresponds to same data number can leave different blocks in, i.e. multi-tiling addressing (Multi-Block Addressing, MBA).With data number 1, the data of data number 1 are stored in block numbering 1 and block numbering 9, therefore the block degree of depth is 2.Namely be the shared block number of data of data numbering in this so-called block degree of depth.Logical blocks numbering and physical blocks numbering are respectively the block numbering that operating system and storage arrangement are seen.Therefore, the logical blocks numbering can be considered aforesaid data number, and the physical blocks numbering can be considered aforesaid block numbering.This embodiment can be with the corresponding relation of logical blocks numbering and physical blocks numbering by flexibly being adjusted into one to one one-to-many by the multi-tiling addressing.Because the logical blocks numbering can be one-to-many with the corresponding relation of physical blocks numbering, therefore can avoid the exchange of internal data too frequent, and then improve efficiency of storage and storage arrangement life-span.
The large I of multi-tiling addressing numbering is further confirmed the ageing of data.For instance, the multi-tiling addressing of block numbering 9 is numbered 1 and the multi-tiling addressing of block numbering 1 is numbered 0, and it is 9 old that the data of expression block numbering 0 ageing numbered than block.So although the legacy data that corresponds to data number 1 is deposited in numbering 0 paging of minute page number 0 to 2 of block numbering 1 and block numbering 9, but because the stored data of numbering 0 paging of numbering 0 to 2 paging of Data Update back zone block number 1 and block numbering 9 are with no longer effective property, so can be regarded as invalid data.After administrative unit 12 confirms that data are invalid, further by administrative unit 12 retrieval managements.
The data of data number 2 for example comprise paged data 2.0, paged data 2.1, paged data 2.2 and paged data 2.3.Administrative unit 12 is found out numbering 0 paging of corresponding block numbering 5 according to management information, and paged data 2.0 is write to numbering 0 paging of corresponding block numbering 5 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 5 according to management information, and paged data 2.2 is write to numbering 1 paging of corresponding block numbering 5 according to management information.Administrative unit 12 is found out numbering 2 pagings of corresponding block numbering 5 according to management information, and paged data 2.2 is write to numbering 2 pagings of corresponding block numbering 5 according to management information.Administrative unit 12 is found out numbering 3 pagings of corresponding block numbering 5 according to management information, and paged data 2.1 is write to numbering 3 pagings of corresponding block numbering 5 according to management information.Administrative unit 12 is found out numbering 0 paging of corresponding block numbering 8 according to management information, and paged data 2.2 is write to numbering 0 paging of corresponding block numbering 8 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 8 according to management information, and paged data 2.3 is write to numbering 1 paging of corresponding block numbering 8 according to management information.The paged data that corresponds to same data number can leave different blocks in.With data number 2, the data of data number 2 are stored in block numbering 2, block numbering 5 and block numbering 8, therefore the block degree of depth is 3.
The data of data number 6 for example comprise paged data 6.0, paged data 6.2 and paged data 6.3.Administrative unit 12 is found out numbering 0 paging of corresponding block numbering 10 according to management information, and paged data 6.0 is write to numbering 0 paging of corresponding block numbering 10 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 10 according to management information, and paged data 6.2 is write to numbering 1 paging of corresponding block numbering 10 according to management information.Administrative unit 12 is found out numbering 3 pagings of corresponding block numbering 10 according to management information, and paged data 6.3 is write to numbering 3 pagings of corresponding block numbering 10 according to management information.All data of factor data numbering 6 have all write to block numbering 10, so no longer effective property of block numbering 6 data of depositing, after administrative unit 12 confirms that data are invalid, further remove the block of depositing invalid data, use in order to follow-up data writing, therefore 6 of data numbers are present in block numbering 10, therefore the block degree of depth is 1.
It should be noted that administrative unit 12 except in order data being write the corresponding paging as aforementioned, also can non-ly write to data corresponding paging in order.For instance, the data of data number 3 comprise paged data 3.0, paged data 3.1, paged data 3.2 and paged data 3.3.For example, administrative unit 12 is found out numbering 0 paging of corresponding block numbering 3 according to management information, and paged data 3.0 is write to the 0th paging of corresponding block numbering 3 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 3 according to management information, and paged data 3.1 is write to numbering 1 paging of corresponding block numbering 3 according to management information.Administrative unit 12 is found out numbering 2 pagings of corresponding block numbering 3 according to management information, and paged data 3.3 is write to numbering 2 pagings of corresponding block numbering 3 according to management information.Administrative unit 12 is found out numbering 3 pagings of corresponding block numbering 3 according to management information, and paged data 3.2 is write to numbering 3 pagings of corresponding block numbering 3 according to management information.Hence one can see that, and administrative unit 12 does not need in order data writing, therefore can provide data to write larger elasticity.
When wanting data writing greater than a block length, then administrative unit 12 can be disassembled raw data first and be block data and paged data.Block data write then as aforementioned in mode corresponding to block with block data data writing storage element 11.Paged data write then as aforementioned in mode corresponding to paging with data data writing storage element 11.
Aforementioned data storage element 11 can also comprise that one merges (Merge) block.When the corresponding block degree of depth of several paged datas of same data number during greater than a threshold value, administrative unit 12 can be incorporated into several paged datas the merging block, to discharge more storage area.
Referring again to Fig. 1 and Fig. 2, administrative unit 12 is front wants respectively to write paged data 1.0, paged data 1.0 and paged data 1.1 upgrading in numbering 0 to 2 paging of block numbering 1.Before upgrading, administrative unit 12 is found out numbering 0 paging of corresponding block numbering 1 according to management information, and paged data 1.0 is write to numbering 0 paging of corresponding block numbering 1 according to management information.Administrative unit 12 is found out numbering 1 paging of corresponding block numbering 1 according to management information, and paged data 1.0 is write to numbering 1 paging of corresponding block numbering 1 according to management information.Administrative unit 12 is found out numbering 2 pagings of corresponding block numbering 1 according to management information, and paged data 1.1 is write to numbering 2 pagings of corresponding block numbering 1 according to management information.It should be noted that, administrative unit 12 can also illustrate the data of repeatedly upgrading certain data number such as Fig. 2 except data number can write not according to order, illustrate numbering 0 and 1 paging that data number 1.0 repeatedly is updated to block numbering 1 such as Fig. 2.Thus, with so that the renewal of frequently-used data becomes easily and fast.
In sum, although the present invention discloses as above with preferred embodiment, so it is not to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking appended the claim scope person of defining.

Claims (33)

1.一种存储器装置，包括：1. A memory device comprising: 一数据储存单元，包括一第一区块，该第一区块包括一第一分页；以及a data storage unit including a first block including a first page; and 一管理单元，用以根据一第一管理信息找出该第一分页，并根据该第一管理信息将一第一分页数据写入至该第一分页，该第一管理信息至少包括一第一区块编号及一第一分页编号。a management unit, configured to find the first page according to a first management information, and write a first page data into the first page according to the first management information, the first management information includes at least a first block number and a first page number. 2.根据权利要求1所述的存储器装置，其中该第一管理信息还包括一第一多区块寻址编号，该第一多区块寻址编号用以表示该第一分页数据的时效性。2. The memory device according to claim 1, wherein the first management information further comprises a first multi-block addressing number, and the first multi-block addressing number is used to represent the timeliness of the first page data . 3.根据权利要求1所述的存储器装置，其中该管理单元包括：3. The memory device according to claim 1, wherein the management unit comprises: 一地址管理单元，用以提供该第一区块编号及该第一分页编号；以及an address management unit for providing the first block number and the first page number; and 一管理信息记录单元，用以记录该第一管理信息。A management information recording unit is used to record the first management information. 4.根据权利要求1所述的存储器装置，其中该管理单元还包括：4. The memory device according to claim 1, wherein the management unit further comprises: 一数据处理单元，用以产生该第一分页数据。A data processing unit is used to generate the first paged data. 5.根据权利要求1所述的存储器装置，其中该管理单元还根据一第二管理信息将一第二分页数据写入至该数据储存单元，该第二管理信息还包括一第二区块编号及一第二分页编号。5. The memory device according to claim 1, wherein the management unit also writes a second page data into the data storage unit according to a second management information, and the second management information further includes a second block number and a second page number. 6.根据权利要求5所述的存储器装置，其中该第一区块还包括：6. The memory device according to claim 5, wherein the first block further comprises: 一第二分页，该管理单元根据该第二区块编号及该第二分页编号将该第二分页数据写入至该第二分页。A second page, the management unit writes the second page data into the second page according to the second block number and the second page number. 7.根据权利要求6所述的存储器装置，其中该第一分页与该第二分页内所储存的数据编号被非依序写入该第一分页及该第二分页。7. The memory device according to claim 6, wherein the data numbers stored in the first page and the second page are non-sequentially written into the first page and the second page. 8.根据权利要求6所述的存储器装置，其中该第一分页数据与该第二分页数据是对应至同一数据编号。8. The memory device according to claim 6, wherein the first page data and the second page data correspond to the same data number. 9.根据权利要求5所述的存储器装置，其中该数据储存单元还包括一第二区块，该第二区块包括一第二分页，该管理单元根据该第二区块编号及该第二分页编号将该第二分页数据写入至该第二分页。9. The memory device according to claim 5, wherein the data storage unit further includes a second block, the second block includes a second page, and the management unit according to the second block number and the second The page number writes the second page data into the second page. 10.根据权利要求9所述的存储器装置，其中该第一分页数据与该第二分页数据是对应至同一数据编号。10. The memory device according to claim 9, wherein the first page data and the second page data correspond to the same data number. 11.根据权利要求9所述的存储器装置，其中该数据储存单元还包括：11. The memory device according to claim 9, wherein the data storage unit further comprises: 一合并区块，当该第一分页数据与该第二分页数据所对应的一区块深度大于一临限值时，该管理单元将该第一分页数据及该第二分页数据合并至该合并区块。A merged block, when a block depth corresponding to the first paged data and the second paged data is greater than a threshold value, the management unit merges the first paged data and the second paged data into the merged blocks. 12.根据权利要求1所述的存储器装置，其中该管理单元还根据一第二管理信息将该第一分页数据写入至该数据储存单元，该第二管理信息至少包括一第二区块编号及一第二分页编号。12. The memory device according to claim 1, wherein the management unit further writes the first page data into the data storage unit according to a second management information, and the second management information includes at least a second block number and a second page number. 13.根据权利要求12所述的存储器装置，其中该第一区块还包括一第二分页，该管理单元根据该第二区块编号及该第二分页编号将该第一分页数据写入至该第二分页。13. The memory device according to claim 12, wherein the first block further includes a second page, and the management unit writes the first page data into the first page according to the second block number and the second page number The second pagination. 14.根据权利要求1所述的存储器装置，其中该存储器装置为闪存。14. The memory device of claim 1, wherein the memory device is a flash memory. 15.一种存储器装置的写入方法，包括：15. A writing method of a memory device, comprising: (a)根据一第一管理信息找出一数据储存单元的一第一区块的一第一分页；以及(a) finding a first page of a first block of a data storage unit according to a first management information; and (b)根据该第一管理信息将一第一分页数据写入至该第一分页，该第一管理信息至少包括一第一区块编号及一第一分页编号。(b) Write a first page data into the first page according to the first management information, where the first management information at least includes a first block number and a first page number. 16.根据权利要求15所述的存储器装置的写入方法，其中该第一管理信息还包括一第一多区块寻址编号，该第一多区块寻址编号用以表示该第一分页数据的时效性。16. The writing method of the memory device according to claim 15, wherein the first management information further includes a first multi-block addressing number, and the first multi-block addressing number is used to represent the first page Timeliness of data. 17.根据权利要求15所述的存储器装置的写入方法，包括：17. The writing method of the memory device according to claim 15 , comprising: (c)产生该第一分页数据；(c) generating the first paged data; (d)提供该第一区块编号及该第一分页编号；以及(d) provide the first block number and the first page number; and (e)记录该第一管理信息。(e) Recording the first management information. 18.根据权利要求15所述的存储器装置的写入方法，还包括：18. The writing method of the memory device according to claim 15, further comprising: (c)根据一第二管理信息将一第二分页数据写入至该数据储存单元，该第二管理信息至少包括一第二区块编号及一第二分页编号。(c) Writing a second page data into the data storage unit according to a second management information, the second management information at least including a second block number and a second page number. 19.根据权利要求18所述的存储器装置的写入方法，其中于该步骤(c)是根据该第二区块编号及该第二分页编号将该第二分页数据写入至该第一区块的一第二分页。19. The writing method of the memory device according to claim 18, wherein in the step (c), the second page data is written into the first area according to the second block number and the second page number A second page break of the block. 20.根据权利要求19所述的存储器装置的写入方法，其中该第一分页与该第二分页内所储存的数据编号被非依序写入该第一分页及该第二分页。20. The writing method of the memory device according to claim 19, wherein the data numbers stored in the first page and the second page are non-sequentially written into the first page and the second page. 21.根据权利要求19所述的存储器装置的写入方法，其中该第一分页数据与该第二分页数据是对应至同一数据编号。21. The writing method of a memory device according to claim 19, wherein the first page data and the second page data correspond to the same data number. 22.根据权利要求18所述的存储器装置的写入方法，其中该步骤(c)是根据该第二区块编号及该第二分页编号将该第二分页数据写入至该数据储存单元的一第二区块的一第二分页。22. The writing method of the memory device according to claim 18, wherein the step (c) is to write the second page data to the data storage unit according to the second block number and the second page number A second page of a second block. 23.根据权利要求22所述的存储器装置的写入方法，其中该第一分页数据与该第二分页数据是对应至同一数据编号。23. The writing method of the memory device according to claim 22, wherein the first page data and the second page data correspond to the same data number. 24.根据权利要求23所述的存储器装置的写入方法，还包括：24. The writing method of the memory device according to claim 23, further comprising: (e)当该第一分页数据与该第二分页数据所对应的一区块深度大于一临限值时，将该第一分页数据及该第二分页数据合并至该数据储存单元的一合并区块。(e) When the depth of a block corresponding to the first page data and the second page data is greater than a threshold value, merging the first page data and the second page data into the data storage unit blocks. 25.根据权利要求15所述的存储器装置的写入方法，还包括：25. The writing method of the memory device according to claim 15, further comprising: (c)根据一第二管理信息将该第一分页数据写入至该数据储存单元，该第二管理信息至少包括一第二区块编号及一第二分页编号。(c) writing the first page data into the data storage unit according to a second management information, the second management information at least including a second block number and a second page number. 26.根据权利要求25所述的存储器装置的写入方法，其中该步骤(c)是根据该第二区块编号及该第二分页编号将该第一分页数据写入至该第一区块的一第二分页。26. The writing method of the memory device according to claim 25, wherein the step (c) is to write the first page data into the first block according to the second block number and the second page number A second pagination of . 27.根据权利要求15所述的存储器装置的写入方法，其中该存储器装置为闪存。27. The method for writing a memory device according to claim 15, wherein the memory device is a flash memory. 28.一种存储器装置，包括：28. A memory device comprising: 一数据储存单元，包括多个物理区块，各该物理区块包括多个分页；以及a data storage unit including a plurality of physical blocks, each of which includes a plurality of pages; and 一管理单元，用以将一第一分页数据写入至该数据储存单元的一第一物理区块的一分页，以及将一第二分页数据写入至该数据储存单元的一第二物理区块的一分页，其中该第一分页数据与该第二分页数据是对应至相同的一第一逻辑区块编号。A management unit for writing a first page data into a page of a first physical block of the data storage unit, and writing a second page data into a second physical area of the data storage unit A page of the block, wherein the first page data and the second page data correspond to the same first logical block number. 29.根据权利要求28所述的存储器装置，其中该管理单元还将一第三分页数据写入至该数据储存单元的一第三物理区块的一第一分页，以及将一第四分页数据写入至该第三物理区块的一第二分页，其中该第三分页数据与该第四分页数据是对应至相同的一第二逻辑区块编号。29. The memory device according to claim 28, wherein the management unit also writes a third page data to a first page of a third physical block of the data storage unit, and writes a fourth page data Writing to a second page of the third physical block, wherein the third page data and the fourth page data correspond to the same second logical block number. 30.根据权利要求28所述的存储器装置，其中存储器装置为闪存。30. The memory device of claim 28, wherein the memory device is flash memory. 31.一种存储器装置的写入方法，包括：31. A method of writing to a memory device, comprising: 接收对应于相同的一第一逻辑区块编号的第一分页数据与一第二分页数据；receiving first page data and a second page data corresponding to the same first logical block number; 将该第一分页数据写入至一数据储存单元的一第一物理区块的一分页；以及writing the first page data to a page of a first physical block of a data storage unit; and 将该第二分页数据写入至该数据储存单元的一第二物理区块的一分页。The second page data is written into a page of a second physical block of the data storage unit. 32.根据权利要求31所述的存储器装置的写入方法，还包括：32. The writing method of the memory device according to claim 31, further comprising: 接收对应于相同的一第二逻辑区块编号的一第三分页数据与一第四分页数据；receiving a third page data and a fourth page data corresponding to the same second logical block number; 将该第三分页数据写入至该数据储存单元的一第三物理区块的一第一分页；以及writing the third page data into a first page of a third physical block of the data storage unit; and 将该第四分页数据写入至该第三物理区块的一第二分页。The fourth page data is written into a second page of the third physical block. 33.根据权利要求31所述的存储器装置的写入方法，其中该存储器装置为闪存。33. The method for writing a memory device according to claim 31, wherein the memory device is a flash memory.
CN2011102522996A 2011-08-30 2011-08-30 Memory device and writing method thereof Pending CN102955741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102522996A CN102955741A (en) 2011-08-30 2011-08-30 Memory device and writing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102522996A CN102955741A (en) 2011-08-30 2011-08-30 Memory device and writing method thereof

Publications (1)

Publication Number Publication Date
CN102955741A true CN102955741A (en) 2013-03-06

Family

ID=47764565

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102522996A Pending CN102955741A (en) 2011-08-30 2011-08-30 Memory device and writing method thereof

Country Status (1)

Country Link
CN (1) CN102955741A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103412779A (en) * 2013-08-14 2013-11-27 浙江大学 Patch file system implementation method of embedded real-time operating system
CN106959822A (en) * 2013-12-27 2017-07-18 威盛电子股份有限公司 Data storage device and data writing method thereof
WO2022156369A1 (en) * 2021-01-22 2022-07-28 苏州浪潮智能科技有限公司 Storage block management information synchronous recording method and system, and terminal and storage medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030163630A1 (en) * 2002-02-27 2003-08-28 Aasheim Jered Donald Dynamic data structures for tracking data stored in a flash memory device
CN1637721A (en) * 2003-12-30 2005-07-13 三星电子株式会社 Address mapping method and mapping information managing method for flash memory, and flash memory using the same
CN101216806A (en) * 2008-01-17 2008-07-09 北京中星微电子有限公司 Data updating method and device
CN101539887A (en) * 2009-05-06 2009-09-23 美商威睿电通公司 Flash memory management method and computer system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030163630A1 (en) * 2002-02-27 2003-08-28 Aasheim Jered Donald Dynamic data structures for tracking data stored in a flash memory device
CN1637721A (en) * 2003-12-30 2005-07-13 三星电子株式会社 Address mapping method and mapping information managing method for flash memory, and flash memory using the same
CN101216806A (en) * 2008-01-17 2008-07-09 北京中星微电子有限公司 Data updating method and device
CN101539887A (en) * 2009-05-06 2009-09-23 美商威睿电通公司 Flash memory management method and computer system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103412779A (en) * 2013-08-14 2013-11-27 浙江大学 Patch file system implementation method of embedded real-time operating system
CN103412779B (en) * 2013-08-14 2016-12-28 浙江大学 A kind of patch file network system realization of embedded real-time operating system
CN106959822A (en) * 2013-12-27 2017-07-18 威盛电子股份有限公司 Data storage device and data writing method thereof
CN106959822B (en) * 2013-12-27 2020-02-07 威盛电子股份有限公司 Data storage device and data writing method thereof
WO2022156369A1 (en) * 2021-01-22 2022-07-28 苏州浪潮智能科技有限公司 Storage block management information synchronous recording method and system, and terminal and storage medium

Similar Documents

Publication Publication Date Title
CN107168647B (en) FLASH data read-write method and system
US8909986B2 (en) Data storing method for solid state drive to preserve data integrity after power failure
US8041884B2 (en) Controller for non-volatile memories and methods of operating the memory controller
KR100806343B1 (en) Memory system including flash memory and its mapping table management method
CN101425041B (en) Optimizing method for establishing FAT file systems on NAND FLASH memory
TWI399644B (en) Block management method for a non-volatile memory
CN102779096B (en) Page, block and face-based three-dimensional flash memory address mapping method
CN105426315B (en) Method for maintaining entity storage comparison table and device using same
CN101901189B (en) Method of updating user data and method of restoring user data
TW200601040A (en) Management of non-volatile memory systems having large erase blocks
US9122586B2 (en) Physical-to-logical address map to speed up a recycle operation in a solid state drive
US20100146194A1 (en) Storage Device And Data Management Method
CN104077235A (en) Method and memory system for dividing physical blocks
CN101419573A (en) Storage management method, system and storage apparatus
CN110674056B (en) Garbage recovery method and device
US9176866B2 (en) Active recycling for solid state drive
US11334480B2 (en) Data storage device and non-volatile memory control method
SG193114A1 (en) Data storage device and method of managing a cache in a data storage device
US10168951B2 (en) Methods for accessing data in a circular block mode and apparatuses using the same
CN104598386A (en) Method for recycling solid state drive block by tracking and utilizing secondary mapping index
US10216571B2 (en) System and methodology for error management within a shared non-volatile memory architecture using bloom filters
CN109407985B (en) Data management method and related device
TWI450271B (en) Method for managing a plurality of blocks of a flash memory, and associated memory device and controller thereof
KR102144124B1 (en) Method and apparatus for managing data of non-volatile memory in hybrid main memory system
CN102955741A (en) Memory device and writing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130306