CN102935994A - Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method - Google Patents
Novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method Download PDFInfo
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- CN102935994A CN102935994A CN2012102854784A CN201210285478A CN102935994A CN 102935994 A CN102935994 A CN 102935994A CN 2012102854784 A CN2012102854784 A CN 2012102854784A CN 201210285478 A CN201210285478 A CN 201210285478A CN 102935994 A CN102935994 A CN 102935994A
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Abstract
The present invention relates to a novel CMOS-MEMS compatible uncooled infrared sensor pixel level packaging method, which can be performed according to the following steps: preparing a second sacrificial layer on a first sacrificial layer of a device wafer, and carrying out a graphical treatment; respectively preparing an infrared antireflection film and an infrared permeation layer on the second sacrificial layer by using a film preparation technology, and respectively etching a small hole on the infrared antireflection film and the infrared permeation layer; preparing a third sacrificial layer on the infrared permeation layer, and carrying out a graphical treatment; preparing an infrared antireflection film on the third sacrificial layer, and etching a small hole on the infrared antireflection film to be adopted as a release hole; and removing all the sacrificial layers through the release hole, sealing the release hole by using a hole filling material, and carrying out scribing to prepare the finished product. With the process, packaging cost of the uncooled infrared detector can be further reduced, and mass applications of the uncooled infrared detector can be easily achieved.
Description
Technical field
The present invention relates to the Pixel-level method for packing for a kind of Non-refrigeration infrared focal plane array detector of infrared imaging system technical field.
Background technology
For non-refrigerated infrared detector, traditional encapsulated type mainly is wafer-level package, usually adopts metal or ceramic cartridge.Technical process comprises the steps: reading circuit and the sensitive structure of preparation non-refrigerated infrared detector on (1) Silicon Wafer; (2) the above-mentioned wafer for preparing is cut into the single detector chip; (3) paster, routing; (4) vacuum capping.Above-mentioned steps (3) and (4) are for one single chip, owing to can cut out up to a hundred detector chips on a wafer, therefore, this packing forms is inefficiency but also with high costs not only.At present, utilize the packaging cost of the non-refrigerated infrared detector of conventional package type to account for 90% of whole detector cost.The cost of non-refrigerated infrared detector is high, and encapsulation is a very important reason.Therefore, realize the high volume applications of non-refrigerated infrared detector, must reduce the cost of non-refrigerated infrared detector, at first just must reduce the cost of encapsulation.
The way of generally using at present is to adopt wafer-level packaging (WLP) thereby the mass reduction packaging cost of realizing encapsulating.Wafer-level packaging is to utilize semiconductor fabrication that whole detector array is encapsulated in the vacuum chamber, and technical process is fairly simple, and can make in batches, but poor reliability, in case the whole detector of vacuum failure can't work.Novel Pixel-level encapsulation will address this problem, the Pixel-level encapsulation is that each pixel of non-refrigerated infrared detector is carried out respectively Vacuum Package, each pixel can independently work, even certain pixel vacuum failure is arranged, whole detector still can work.The Pixel-level encapsulation is to adopt semiconductor fabrication to realize equally, can realize equally in batches encapsulation, reduces the cost of whole non-refrigerated infrared detector.
Summary of the invention
The invention provides the non-refrigerating infrared sensor Pixel-level method for packing of a kind of New-type CMOS-MEMS compatibility, and can realize that CMOS-MEMS is compatible, than traditional handicraft and wafer-level packaging, performance is better, reliability is higher, be easier to realize producing in enormous quantities and reducing packaging cost.
In order to achieve the above object, technical scheme of the present invention is achieved in that
The non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS-MEMS compatibility is characterized in that carrying out according to the following steps: the first sacrifice layer preparation the second sacrifice layer in device wafers is also graphical; Utilize film preparing technology on the second sacrifice layer, to prepare respectively infrared anti-reflection film and the infrared layer that sees through, and etch an aperture at infrared anti-reflection film and the infrared layer that sees through; At infrared layer preparation the 3rd sacrifice layer and graphical that see through; Prepare infrared anti-reflection film at the 3rd sacrifice layer, etch an aperture as release aperture at infrared anti-reflection film simultaneously; Remove all sacrifice layers and with release aperture filling perforation material seal, scribing makes the non-refrigerating infrared sensor of New-type CMOS-MEMS compatibility by release aperture.
Described device wafers has reading circuit, the responsive unit of detector, the first sacrifice layer and degasifier.
The material of described infrared anti-reflection film is ZnS.
The described infrared material that sees through layer is Ge.
Described filling perforation material is metal material.
The material of described degasifier is titanium.
Technique of the present invention can further reduce the packaging cost of non-refrigerated infrared detector, the high volume applications of easier realization non-refrigerated infrared detector.
Description of drawings
Fig. 1 is used for the device wafers schematic diagram before the Pixel-level encapsulation process;
Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9, Figure 10 are Pixel-level packaging technology flow chart.
Reference numeral among the figure: 1: device wafers; 2: the responsive unit of detector; 3: the first sacrifice layers; The 3 ': the second sacrifice layer; 4: infrared anti-reflection film and the infrared layer that sees through; 5: the three sacrifice layers; 6: infrared anti-reflection film; 7: the filling perforation material; 8: degasifier.
The specific embodiment
The invention will be further described by reference to the accompanying drawings.
Below in conjunction with instantiation, purpose of the present invention, technical scheme are elaborated.
As shown in Figure 1, described device wafers has reading circuit, detector responsive unit the 2, first sacrifice layer and degasifier 8.
The first sacrifice layer 3 of the device wafers 1 that sensing element 2 machines does not discharge, and is with the different place of common process, will prepare in advance degasifier 8 in the process of making the responsive unit 2 of detector, and the material of described degasifier is titanium; At the first sacrifice layer 3 preparations the second sacrifice layer 3 ', as shown in Figure 2, the height of the first sacrifice layer 3 and the second sacrifice layer 3 ' is 2.5um, and the material of the first sacrifice layer 3 and the second sacrifice layer 3 ' is polyimides or polysilicon;
Utilize deep trouth dry etch process etching the first sacrifice layer 3 and the second sacrifice layer 3 ', form the dark deep hole of 2.5um at crystal column surface, as shown in Figure 3;
Prepare long wave (8-14um) infrared anti-reflection film and the infrared layer 4 that sees through at above-mentioned wafer, as shown in Figure 4, infrared anti-reflection film and the infrared infrared anti-reflection membrane material that sees through in the layer 4 adopt ZnS, and the infrared layer material that sees through adopts Ge, also can be the combination of other materials;
Infrared anti-reflection film and the infrared layer 4 that sees through at above-mentioned wafer etch an aperture, and as shown in Figure 5, this etching technics preferably adopts dry etch process;
Infrared anti-reflection film and infrared layer 4 preparation the 3rd sacrifice layer 5 and it is graphical that sees through at above-mentioned wafer, infrared anti-reflection film and infraredly see through the aperture that etches on the layer 4 so that form the microchannel, as shown in Figure 6, the material of the 3rd sacrifice layer 5 can be polyimides or polysilicon;
At infrared anti-reflection film and infrared layer the 4 and the 3rd sacrifice layer 5 preparation infrared anti-reflection films 6 that see through of above-mentioned wafer, as shown in Figure 7, the material of this infrared anti-reflection film is ZnS or other antireflection material.Infrared anti-reflection film and infraredly see through layer 4 and infrared anti-reflection film 6 mainly is in order to form the vacuum capping of single pixel, can to see through LONG WAVE INFRARED simultaneously;
Infrared anti-reflection film 6 at above-mentioned wafer etches an aperture, and as shown in Figure 8, this aperture is used for discharging the first sacrifice layer 3, the second sacrifice layer 3 ' and the 3rd sacrifice layer 5;
Utilize dry etch process to remove the first sacrifice layer 3, the second sacrifice layer 3 ' and the 3rd sacrifice layer 5, as shown in Figure 9;
Preparation filling perforation material 7 under the high vacuum environment condition, the thickness of filling perforation material 7 should satisfy the requirement of the above-mentioned release aperture of sealing, filling perforation material 7 is infrared anti-reflection membrane material or non-infrared anti-reflection membrane material, if the infrared anti-reflection membrane material, filling perforation material 7 just can be graphical; If be that non-infrared anti-reflection film material then filling perforation material 7 still need graphically, as shown in figure 10;
Scribing makes the non-refrigerating infrared sensor of New-type CMOS-MEMS compatibility.
Claims (6)
1. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS-MEMS compatibility is characterized in that carrying out according to the following steps: at the first sacrifice layer preparation second sacrifice layer of device wafers and graphical; Utilize film preparing technology on the second sacrifice layer, to prepare respectively infrared anti-reflection film and the infrared layer that sees through, and etch an aperture at infrared anti-reflection film and the infrared layer that sees through; At infrared layer preparation the 3rd sacrifice layer and graphical that see through; Prepare infrared anti-reflection film at the 3rd sacrifice layer, etch an aperture as release aperture at infrared anti-reflection film simultaneously; Remove all sacrifice layers and with release aperture filling perforation material seal, scribing makes the non-refrigerating infrared sensor of New-type CMOS-MEMS compatibility by release aperture.
2. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS according to claim 1-MEMS compatibility is characterized in that: described device wafers has reading circuit, the responsive unit of detector, the first sacrifice layer and degasifier.
3. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS according to claim 1-MEMS compatibility, it is characterized in that: the material of described infrared anti-reflection film is ZnS.
4. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS according to claim 1-MEMS compatibility is characterized in that: the described infrared material that sees through layer is Ge.
5. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS according to claim 1-MEMS compatibility, it is characterized in that: described filling perforation material is metal material.
6. the non-refrigerating infrared sensor Pixel-level method for packing of New-type CMOS according to claim 1-MEMS compatibility, it is characterized in that: the material of described degasifier is titanium.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104310300A (en) * | 2014-09-23 | 2015-01-28 | 杭州大立微电子有限公司 | Infrared detector integrated with pixel-level condensing lenses and preparation method thereof |
| CN105070733A (en) * | 2015-07-28 | 2015-11-18 | 昆明物理研究所 | Airtight packaging method of non-refrigeration infrared focal plane detector |
| EP3196615A1 (en) | 2016-01-20 | 2017-07-26 | Ulis | Method for manufacturing an electromagnetic-radiation detector with microencapsulation |
| CN107055456A (en) * | 2017-04-14 | 2017-08-18 | 上海华虹宏力半导体制造有限公司 | The encapsulating structure and method of mems device |
| CN108313973A (en) * | 2017-12-27 | 2018-07-24 | 武汉高德红外股份有限公司 | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector |
| TWI675444B (en) * | 2017-09-27 | 2019-10-21 | 台灣積體電路製造股份有限公司 | Mems device and method for packaging mems |
| CN112539846A (en) * | 2020-12-04 | 2021-03-23 | 武汉高芯科技有限公司 | Uncooled infrared detector and pixel level packaging structure thereof |
| CN113621374A (en) * | 2021-06-22 | 2021-11-09 | 武汉高芯科技有限公司 | Corrosive liquid and method for corrosion of infrared detector small hole |
| CN113677618A (en) * | 2019-04-01 | 2021-11-19 | 迈瑞迪创新科技有限公司 | Monolithic post-complementary metal oxide-semiconductor integration of pyroelectric-based infrared detectors |
| US11279615B2 (en) | 2017-09-27 | 2022-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer |
| WO2024138656A1 (en) * | 2022-12-28 | 2024-07-04 | 烟台睿创微纳技术股份有限公司 | Uncooled infrared focal plane detector module and manufacturing method therefor |
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| CN104310300A (en) * | 2014-09-23 | 2015-01-28 | 杭州大立微电子有限公司 | Infrared detector integrated with pixel-level condensing lenses and preparation method thereof |
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| CN108313973A (en) * | 2017-12-27 | 2018-07-24 | 武汉高德红外股份有限公司 | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector |
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| CN113677618A (en) * | 2019-04-01 | 2021-11-19 | 迈瑞迪创新科技有限公司 | Monolithic post-complementary metal oxide-semiconductor integration of pyroelectric-based infrared detectors |
| CN112539846A (en) * | 2020-12-04 | 2021-03-23 | 武汉高芯科技有限公司 | Uncooled infrared detector and pixel level packaging structure thereof |
| CN113621374B (en) * | 2021-06-22 | 2022-05-31 | 武汉高芯科技有限公司 | Corrosive liquid and method for corrosion of infrared detector small hole |
| CN113621374A (en) * | 2021-06-22 | 2021-11-09 | 武汉高芯科技有限公司 | Corrosive liquid and method for corrosion of infrared detector small hole |
| WO2024138656A1 (en) * | 2022-12-28 | 2024-07-04 | 烟台睿创微纳技术股份有限公司 | Uncooled infrared focal plane detector module and manufacturing method therefor |
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Application publication date: 20130220 |