CN102931287A - N-type battery slice and preparation method thereof - Google Patents
N-type battery slice and preparation method thereof Download PDFInfo
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- CN102931287A CN102931287A CN2012104751994A CN201210475199A CN102931287A CN 102931287 A CN102931287 A CN 102931287A CN 2012104751994 A CN2012104751994 A CN 2012104751994A CN 201210475199 A CN201210475199 A CN 201210475199A CN 102931287 A CN102931287 A CN 102931287A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 claims abstract description 58
- 229910052796 boron Inorganic materials 0.000 claims abstract description 39
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002002 slurry Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000007639 printing Methods 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000007747 plating Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 10
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000005297 pyrex Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- -1 boron ions Chemical class 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910015845 BBr3 Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a preparation method of an N-type battery slice, which comprises the following steps of: preparing velvet on the surface of an N-type substrate; printing boron slurry on the front surface of the N-type battery slice to carry out boron diffusion and form a selective emitter structure, locating a heavily doped region of a selective emitter in a position of an electrode to be printed, and carrying out phosphorus diffusion on the back of the battery slice to form an N-type back surface field; and plating reflecting films on two surfaces of the battery slice, and then printing electrodes on two surfaces of the battery slice. A selective emitter structure with alternated high and low concentrations of boron ions is formed on the surface of the N-type substrate by using the preparation method; few carriers of the N-type substrate have longer service life and are insensitive to metal impurities; and the N-type battery slice has high efficiency and good stability. Meanwhile, the preparation method has the advantages of simple process, high production efficiency and low energy consumption so as to be suitable for large-scale production. The invention also discloses an N-type battery slice with a selective emitter structure and an N-type back surface field; and the N-type battery slice can be prepared by using the preparation method.
Description
Technical field
The present invention relates to the photovoltaic technology field, particularly relate to a kind of N-type cell piece and preparation method thereof.
Background technology
In the photovoltaic field, usually adopt different doping processs, by diffusion, P type semiconductor and N type semiconductor are produced on the same semiconductor chip, the space charge region that forms at their interface is PN junction, PN junction has unilateral conduction.
Selective emitting electrode structure is a kind ofly in the PN junction crystal-silicon solar cell production technology can realize high efficiency structure.Selective emitting electrode structure has two features: the one, under gate electrode line and near the highly doped dark diffusion region of formation; The 2nd, form low-doped shallow diffusion region in other zones.
Selective emitting electrode structure under the gate electrode line of battery and near the formation heavily doped region, form easily ohmic contact when doing electrode, and this regional volume resistance is less, thereby reduces the series resistance of solar cell, improve the fill factor, curve factor of battery.
Form light doping section in the active region, the low-doped bluk recombination probability that can reduce minority carrier, and can carry out preferably surface passivation, reduce the surface recombination probability of minority carrier, thereby reduce the reverse saturation current of battery, improve open circuit voltage and the short circuit current of battery.
Simultaneously, tie the collection rate that can improve photo-generated carrier at the horizontal height of light doping section and the formation of heavily doped region intersection, thereby improve the short circuit current of battery.Selective emitting electrode structure can improve the open circuit voltage of solar cell, short circuit current and fill factor, curve factor, thus make battery obtain higher photoelectric conversion efficiency.
At present, usually adopt P-type material to make the P type cell piece with selective emitting electrode structure.In the manufacture method of P type cell piece, a kind of mode is oxide mask One Diffusion Process method, cell piece experience oxidation and twice pyroprocess of diffusion in the method, and high-temperature damage is larger than common process, and is higher to the cell piece quality requirement; Another kind of mode is to utilize to return carving technology, but the method is restive, and cost is higher, and plant maintenance bothers; Also having a kind of mode is ion implantation, and the method is one chip technique, and production capacity is restricted, and cost is also higher.
Simultaneously, the efficient of P type battery can decay gradually with the increase of light application time, mainly be owing to mix boron atom in the P type substrate right result of generation boron oxygen that combines with oxygen atom in the substrate, boron oxygen is to being equivalent to carrier traps, reduce the life-span of minority carrier, thereby cause the decay of battery efficiency.
In view of this, demand urgently for above-mentioned technical problem, prepare a kind of cell piece with selective emitting electrode structure, make it have higher efficient and stable preferably.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of N-type cell piece, the N-type cell piece of this preparation method's preparation has selective emitting electrode structure, the minority carrier lifetime of its N-type substrate is higher and insensitive to metal impurities, has higher efficient and stable preferably.Another object of the present invention provides a kind of N-type solar battery sheet.
In order to realize above-mentioned technical purpose, the invention provides a kind of preparation method of N-type cell piece, may further comprise the steps:
1) structuring is carried out on the surface of N-type substrate and processed, to form the matte of inverted pyramid on its surface;
2) carry out the boron diffusion at the front of cell piece printing boron slurry, form selective emitting electrode structure, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed;
3) carry out phosphorus at the back side of cell piece and diffuse to form the N-type back surface field;
4) to cell piece both side surface plating reflectance coating, then print electrode in the cell piece both side surface relative with the heavily doped region of selective emitter.
Preferably, specifically may further comprise the steps step 2):
21) at the front of cell piece printing boron slurry;
22) oven dry, 200 ℃ ~ 300 ℃ of bake out temperatures, drying time 2min ~ 3min;
23) boron diffusion forms selective emitting electrode structure in that cell piece is positive, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed, 900 ℃ ~ 950 ℃ of diffusion temperatures, diffusion time 30min ~ 60min.
Preferably, specifically may further comprise the steps in the step 3):
31) clean, remove Pyrex and the boron slurry on cell piece surface;
32) phosphorus diffusion forms the N-type back surface field at the cell piece back side.
Preferably, specifically may further comprise the steps in the step 4):
41) clean, remove the phosphorosilicate glass on cell piece surface;
42) plasma etching edge;
43) both side surface of cell piece is plated reflectance coating;
44) print electrode in the both side surface relative with the heavily doped region of the selective emitter of cell piece.
Preferably, step 23) in cell piece is put into quartz boat and sent into diffusion furnace, nitrogen carries Boron tribromide and enters diffusion furnace and carry out the boron diffusion.
Preferably, step 32) in cell piece is put into quartz boat and sent into diffusion furnace, nitrogen carries phosphorus oxychloride and enters diffusion furnace and carry out the phosphorus diffusion.
Preferably, using plasma strengthens chemical vapour deposition technique the both side surface of cell piece is carried out deposition plating step 43).
Preferably, clean cell piece with hydrogen fluoride solution, Pyrex and the boron slurry on removal cell piece surface step 31).
Preferably, clean cell piece with hydrogen fluoride solution, the phosphorosilicate glass on removal cell piece surface step 41).
The present invention also provides a kind of N-type cell piece, comprises N-type substrate 1, also comprises selective emitting electrode structure and N-type back surface field 4; Described selective emitting electrode structure is positioned at the front of cell piece, and described N-type back surface field 4 is positioned at the back side of cell piece; The outside of described selective emitter and described N-type back surface field 4 all has reflectance coating 5; Described reflectance coating 5 outsides of described cell piece both sides and the heavily doped region of described selective emitting electrode structure 2 relative positions have respectively front electrode 6 and backplate 7.
The preparation method of N-type cell piece provided by the invention, at first, to the surface wool manufacturing of N-type substrate; Secondly, carry out boron at the front of cell piece printing boron slurry and diffuse to form selective emitting electrode structure, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed, carries out phosphorus at the back side of cell piece and diffuse to form the N-type back surface field; Then, to cell piece both side surface plating reflectance coating, then print electrode in the cell piece both side surface relative with the heavily doped region of selective emitter, and sintering.
This preparation method forms the alternate selective emitting electrode structure of boron ion concentration high-concentration and low-concentration at the N-type substrate surface, and the minority carrier lifetime of N-type substrate is higher, and insensitive to metal impurities, and the N-type cell piece has higher efficient and stable preferably.Simultaneously, only in pyroprocess of boron diffusion process experience, its technique is simple for this preparation method, and production efficiency is high, and energy consumption is low, is applicable to large-scale production.
The present invention also provides a kind of N-type cell piece, and this N-type cell piece has selective emitting electrode structure and N-type back surface field, and the cell piece both side surface position relative with the heavily doped region of selective emitter has respectively front electrode and backplate.This N-type cell piece can make by above-mentioned preparation method.
Description of drawings
Fig. 1 is the flow chart of preparation method's the first embodiment of N-type cell piece provided by the present invention;
Fig. 2 is the flow chart of preparation method's the second embodiment of N-type cell piece provided by the present invention;
Fig. 3 is the flow chart of the third embodiment of preparation method of N-type cell piece provided by the present invention;
Fig. 4 is the structural representation of a kind of embodiment of N-type cell piece provided by the present invention.
Wherein, the Reference numeral among Fig. 4 is as follows:
N-type substrate 1; Heavily doped region 2; Light doping section 3; N-type back surface field 4; Reflectance coating 5; Front electrode 6; Backplate 7.
Embodiment
Core of the present invention provides a kind of preparation method of N-type cell piece, the N-type cell piece of this preparation method's preparation has selective emitting electrode structure, the minority carrier lifetime of its N-type substrate is higher and insensitive to metal impurities, has higher efficient and stable preferably.Another core of the present invention provides a kind of N-type solar battery sheet.
In order to make those skilled in the art person understand better the present invention program, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 1, Fig. 1 is the flow chart of preparation method's the first embodiment of N-type cell piece provided by the present invention.
In a kind of concrete execution mode, the invention provides a kind of preparation method of N-type cell piece, may further comprise the steps:
Step S1 carries out structuring to the surface of N-type substrate and processes, to form the matte of inverted pyramid on its surface;
Step S2 carries out the boron diffusion at the front of cell piece printing boron slurry, forms selective emitting electrode structure, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed;
Step S3 carries out phosphorus at the back side of cell piece and diffuses to form the N-type back surface field;
Step S4 to cell piece both side surface plating reflectance coating, then prints electrode in the cell piece both side surface relative with the heavily doped region of selective emitter.
This preparation method, only pyroprocess of experience in the boron diffusion process just forms the alternate selective emitting electrode structure of boron ion concentration height at the N-type substrate surface.Selective emitting electrode structure can improve the open circuit voltage of cell piece, short circuit current and fill factor, curve factor, thus make cell piece obtain higher photoelectric conversion efficiency.
Selective emitting electrode structure forms light doping section in the active region of cell piece, light doping section can reduce the bluk recombination probability of minority carrier, carry out preferably surface passivation, reduce the surface recombination probability of minority carrier, thereby reduce the reverse saturation current of battery, improve open circuit voltage and the short circuit current of battery.
Selective emitting electrode structure under the cell piece gate electrode line and near the formation heavily doped region, form easily ohmic contact during the work of its electrode, and this regional volume resistance is less, thereby can reduces the series resistance of cell piece, improve the fill factor, curve factor of cell piece.
Simultaneously, selective emitting electrode structure can improve the collection rate of photo-generated carrier at the horizontal height knot of light doping section and the formation of heavily doped region intersection, thereby improves the short circuit current of battery.
The minority carrier lifetime of N-type substrate is higher in the N-type cell piece, and insensitive to metal impurities, has higher efficient and stable preferably.Simultaneously, this preparation method is pyroprocess of experience in the boron diffusion process only, and technique is simple, and production efficiency is high, and energy consumption is low, is applicable to large-scale production.
Please refer to Fig. 2 and Fig. 3, Fig. 2 is the flow chart of preparation method's the second embodiment of N-type cell piece provided by the present invention, and Fig. 3 is the flow chart of the third embodiment of preparation method of N-type cell piece provided by the present invention.
In the concrete execution mode of another kind, the preparation method of N-type cell piece provided by the invention can may further comprise the steps:
Step S1 carries out structuring to the surface of N-type substrate and processes, to form the matte of inverted pyramid on its surface;
Can adopt the mode of chemical cleaning that the structuring processing is carried out on the surface of N-type substrate, this operation can form on the cell piece surface matte of inverted pyramid, thereby reduces surface reflection, improves the light absorption of cell piece inside.Chemical cleaning can also be removed damage layer and the impurity on cell piece surface simultaneously, guarantee the clean level on cell piece surface, avoid the impurity on cell piece surface in follow-up high-temperature diffusion process, to enter the inner complex centre that forms of cell piece battery performance is had a negative impact.Step S21 is at the front of cell piece printing boron slurry;
At the corresponding region of cell piece front electrode printing boron slurry, the zone of having printed the boron slurry in the boron diffusion forms heavily doped region, and the zone of not printing the boron slurry forms lightly doped region.
Step S22, oven dry, 200 ℃ ~ 300 ℃ of bake out temperatures, drying time 2min ~ 3min;
Step S23, boron diffusion forms selective emitting electrode structure in that cell piece is positive, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed, 900 ℃ ~ 950 ℃ of diffusion temperatures, diffusion time 30min ~ 60min;
The above-mentioned cell piece that has printed the boron slurry is put into quartz boat, adopt the BBr3(Boron tribromide) liquid source is by N2(nitrogen) mode of carrying enters diffusion furnace, diffusion furnace tube can adopt tubular diffusion furnace, diffusion temperature can be controlled between 900 ℃-950 ℃, and be 30min-60min diffusion time.Diffusion is to be tending towards uniform directed movement owing to a kind of concentration or temperature of making that the impurity concentration of interior of articles or non-uniform temperature produce, and the diffusion of impurity in semiconductor is to be tending towards uniform impurity directed movement by a kind of impurity concentration that makes that the impurity concentration gradient causes.
After the diffusion, the PN junction emitter of front electrode downside is heavily doped region, ties in substrate interior than the depths; Other regional PN junctions are launched very light doping section, and knot is at the more shallow place of substrate interior; The front of cell piece has namely formed selective emitting electrode structure.
Step S31 cleans, and removes Pyrex and the boron slurry on cell piece surface;
Form before the N-type back surface field, can use first HF(hydrogen fluoride) solution cleaning cell piece, remove Pyrex and the boron slurry on surface, for follow-up phosphorus diffusion preparation back surface field is prepared;
Step S32, the phosphorus diffusion forms the N-type back surface field at the cell piece back side;
Above-mentioned cell piece is put into quartz boat send diffusion furnace, by N2(nitrogen) carry the POCl3(phosphorus oxychloride) entering diffusion furnace, the back side of cell piece namely forms the N-type back surface field after the diffusion.
Step S41 cleans, and removes the phosphorosilicate glass on cell piece surface;
Can use HF(hydrogen fluoride) the solution cleaning, remove the phosphorosilicate glass that produces in the phosphorus diffusion process;
Step S42, the plasma etching edge;
This step is used for the PN junction that etching is removed the cell piece periphery;
Step S43 is to the both side surface plating reflectance coating of cell piece;
Can adopt PECVD method (plasma enhanced chemical vapor deposition method) that the both side surface of cell piece is carried out deposition plating;
Step S44 prints electrode in the both side surface relative with the heavily doped region of the selective emitter of cell piece.
The rear sintering that prints electrode has namely been finished the manufacturing of N-type cell piece.
In this preparation method, before the boron diffusion, adopt the mode of silk screen printing in the front electrode grid line of N-type substrate corresponding position printing boron slurry and oven dry, then the cell piece after will drying is placed on and enters diffusion furnace on the quartz boat, carry out High temperature diffusion, pass into the Boron tribromide gas of certain flow during diffusion, can form in the zone of not printing the boron slurry like this light doping section of low doping concentration, the zone of printing slurry is the heavily doped region of high-dopant concentration, has so just formed the selective emitting electrode structure in N-type cell piece front.
By the N-type cell piece that preparation method of the present invention obtains, its selective emitting electrode structure comprises the heavily doped region of metal area and the lightly doped region of non-metallic areas.The solar energy standard testing part of this structure has the incident Optical Absorption of 20% energy to occur in the diffusion layer approximately, and shallow diffusion can improve the quantum efficiency of short-wave band sunlight, improves short circuit current; Simultaneously, there is a horizontal height knot, can also improves open circuit voltage.
Please refer to Fig. 4, Fig. 4 is the structural representation of a kind of embodiment of N-type cell piece provided by the present invention.
The present invention also provides a kind of N-type cell piece, comprises N-type substrate 1, selective emitting electrode structure and N-type back surface field 4; Selective emitting electrode structure is positioned at the front of cell piece, and N-type back surface field 4 is positioned at the back side of cell piece; The outside of selective emitter and N-type back surface field 4 all has reflectance coating 5; Reflectance coating 5 outsides of cell piece both sides and the heavily doped region of selective emitting electrode structure 2 relative positions have respectively front electrode 6 and backplate 7.
Selective emitting electrode structure comprises gate electrode line downside and near heavily doped region 2 and other regional light doping sections 3 thereof.Selective emitting electrode structure can reduce series resistance, increases fill factor, curve factor; And reduce compound in emitter of charge carrier, improve surface passivation effect; The shortwave spectral response of battery be can also improve simultaneously, short circuit current and open circuit voltage improved.
More than N-type cell piece provided by the present invention and preparation method thereof is described in detail.Used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (10)
1. the preparation method of a N-type cell piece may further comprise the steps:
1) structuring is carried out on the surface of N-type substrate and processed, to form the matte of inverted pyramid on its surface;
2) carry out the boron diffusion at the front of cell piece printing boron slurry, form selective emitting electrode structure, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed;
3) carry out phosphorus at the back side of cell piece and diffuse to form the N-type back surface field;
4) to cell piece both side surface plating reflectance coating, then print electrode in the cell piece both side surface relative with the heavily doped region of selective emitter.
2. the preparation method of N-type cell piece as claimed in claim 1 is characterized in that step 2) in specifically may further comprise the steps:
21) at the front of cell piece printing boron slurry;
22) oven dry, 200 ℃ ~ 300 ℃ of bake out temperatures, drying time 2min ~ 3min;
23) boron diffusion forms selective emitting electrode structure in that cell piece is positive, and so that the heavily doped region of selective emitter is positioned at the position of electrode to be printed, 900 ℃ ~ 950 ℃ of diffusion temperatures, diffusion time 30min ~ 60min.
3. the preparation method of N-type cell piece as claimed in claim 2 is characterized in that, specifically may further comprise the steps in the step 3):
31) clean, remove Pyrex and the boron slurry on cell piece surface;
32) phosphorus diffusion forms the N-type back surface field at the cell piece back side.
4. the preparation method of N-type cell piece as claimed in claim 3 is characterized in that, specifically may further comprise the steps in the step 4):
41) clean, remove the phosphorosilicate glass on cell piece surface;
42) plasma etching edge;
43) both side surface of cell piece is plated reflectance coating;
44) print electrode in the both side surface relative with the heavily doped region of the selective emitter of cell piece.
5. the preparation method of N-type cell piece as claimed in claim 2 is characterized in that step 23) in cell piece is put into quartz boat and is sent into diffusion furnace, nitrogen carries Boron tribromide and enters diffusion furnace and carry out boron diffusion.
6. the preparation method of N-type cell piece as claimed in claim 3 is characterized in that step 32) in cell piece is put into quartz boat and is sent into diffusion furnace, nitrogen carries phosphorus oxychloride and enters diffusion furnace and carry out phosphorus diffusion.
7. the preparation method of N-type cell piece as claimed in claim 4 is characterized in that step 43) in using plasma strengthen chemical vapour deposition technique the both side surface of cell piece carried out deposition plating.
8. such as the preparation method of claim 3 or 6 described N-type cell pieces, it is characterized in that step 31) in clean cell piece with hydrogen fluoride solution, remove Pyrex and the boron slurry on cell piece surface.
9. such as the preparation method of claim 4 or 7 described N-type cell pieces, it is characterized in that step 41) in clean cell piece with hydrogen fluoride solution, remove the phosphorosilicate glass on cell piece surface.
10. a N-type cell piece comprises N-type substrate (1), it is characterized in that, also comprises selective emitting electrode structure and N-type back surface field (4); Described selective emitting electrode structure is positioned at the front of cell piece, and described N-type back surface field (4) is positioned at the back side of cell piece; The outside of described selective emitter and described N-type back surface field (4) all has reflectance coating (5); The position relative with the heavily doped region (2) of described selective emitting electrode structure, described reflectance coating (5) outside of described cell piece both sides has respectively front electrode (6) and backplate (7).
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| CN104617188A (en) * | 2015-02-12 | 2015-05-13 | 苏州徕士达新材料科技有限公司 | Boron-phosphorus low-crossing doping manufacturing process of solar cell |
| CN104733555A (en) * | 2014-12-31 | 2015-06-24 | 江苏顺风光电科技有限公司 | Efficient N-type double-sided solar cell and preparation method thereof |
| CN106158992A (en) * | 2016-08-02 | 2016-11-23 | 苏州金瑞晨科技有限公司 | A kind of N-type high-efficiency battery and preparation method thereof |
| CN106449383A (en) * | 2016-09-28 | 2017-02-22 | 北京金晟阳光科技有限公司 | Planar continuous boron expanding method |
| CN110265497A (en) * | 2019-06-28 | 2019-09-20 | 天合光能股份有限公司 | N-type crystalline silicon solar cell with selective emitter and preparation method thereof |
| CN111739957A (en) * | 2020-06-30 | 2020-10-02 | 常州时创能源股份有限公司 | Selective Doping Methods for N-Type Solar Cells |
| CN112201575A (en) * | 2020-09-11 | 2021-01-08 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | Selective boron source doping method and preparation method of double-sided battery |
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| CN116741892A (en) * | 2023-08-16 | 2023-09-12 | 常州亿晶光电科技有限公司 | Preparation method of boron doped selective emitter battery |
| CN116741892B (en) * | 2023-08-16 | 2023-11-07 | 常州亿晶光电科技有限公司 | Preparation method of boron doped selective emitter battery |
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