CN102916675A - Piezoelectric acoustic-wave filter and chip packaging structure - Google Patents
Piezoelectric acoustic-wave filter and chip packaging structure Download PDFInfo
- Publication number
- CN102916675A CN102916675A CN2012103451155A CN201210345115A CN102916675A CN 102916675 A CN102916675 A CN 102916675A CN 2012103451155 A CN2012103451155 A CN 2012103451155A CN 201210345115 A CN201210345115 A CN 201210345115A CN 102916675 A CN102916675 A CN 102916675A
- Authority
- CN
- China
- Prior art keywords
- inductor
- packaging
- chip
- base plate
- piezoelectricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Filters And Equalizers (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a piezoelectric acoustic-wave filter and a chip packaging structure, wherein a mutual inductor is led between inductors used for connecting the piezoelectric acoustic-wave filter, so as to regulate the position of transmission zero of the piezoelectric acoustic-wave filter. The piezoelectric acoustic-wave filter comprises a plurality of piezoelectric acoustic-wave resonators and a plurality of inductors connected with the piezoelectric acoustic-wave resonators, and the mutual inductance value of at least two of the inductors is in the interval of 0.01-1nH. In the chip packaging structure, the mutual inductance value of at least two of series-connection bodies of bonding wires or substrate wires and the inductors is in the interval of 0.01-1nH. With the adoption of the technical scheme, the high-frequency performance of the filter is improved, and the occupied space of the inductors can be saved.
Description
Technical field
The present invention relates to the semiconductor integrated circuit technical field, relate to especially piezoelectricity acoustic wave filter and chip-packaging structure.
Background technology
Piezoelectricity acoustic wave filter (being designated hereinafter simply as " filter ") is widely semiconductor device of a kind of use.In order to make filter in the frequency ranges such as specific frequency range such as ISM band, GSM frequency range, to input signal stronger inhibitory action be arranged, usually can make filter in these frequency ranges, have transmission zero.By the inductance value of the inductor in the selective filter, can regulate Frequency point corresponding to these transmission zeros, this action can be called again regulates the filter transmission zero.
Fig. 1 is the schematic diagram according to the circuit theory of a kind of piezoelectricity acoustic wave filter of the prior art.Shown in Figure 1 is a kind of common ladder network structure, and this network configuration is made of piezoelectricity acoustic resonator (X11, X12, X13) and several piezoelectricity acoustic resonators in parallel (Y11, Y12, Y13) of several series connection.In the ladder network structure of reality, also may comprise more piezoelectricity acoustic resonator.Use ic manufacturing technology circuit shown in Figure 1 can be manufactured in the chip, namely obtain a filtering chip.Also comprise several inductance elements in the circuit theory shown in Figure 1.This inductance element can be the inductor of expression filtering chip inside.
When placing transmission zero away from the low frequency place of filter passband, thereby when realizing signal suppressing, often need inductor (for example L11 among Fig. 1, L12, L13) to have larger inductance value.The inventor finds that this larger inductance value can be brought many unfavorable factors in realizing process of the present invention, as makes high frequency performance variation, the inductor of filter take than large space etc.
Summary of the invention
In view of this, the invention provides piezoelectricity acoustic wave filter and chip-packaging structure, to overcome above-mentioned unfavorable factor.
Piezoelectricity acoustic wave filter provided by the invention comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, in described inductor, have at least two mutual inductance inductance value between the inductor to be positioned in the interval [0.01nH, 1nH].
Alternatively, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in a kind of chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, a plurality of concatermers for described inductor and described metallic bond zygonema formation, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
Alternatively, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in the another kind of chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, described metallic bond zygonema is connected with the inductor on the described base plate for packaging respectively, a plurality of concatermers for described inductor and described metallic bond zygonema formation, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
Alternatively, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, weld is connected with the substrate cabling of described inductor and described base plate for packaging simultaneously, a plurality of concatermers for described inductor and described substrate cabling formation, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
Alternatively, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, each weld is connected with the substrate cabling of described substrate, each bar substrate cabling is connected with the inductor on the described base plate for packaging respectively, a plurality of concatermers for described inductor and described substrate cabling formation, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
Alternatively, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, has many strip metals bonding line between described piezoelectricity sound wave filtering chip and the described base plate for packaging, described metallic bond zygonema is connected with the inductor on the described base plate for packaging respectively, for the inductor that is connected with described piezoelectricity acoustic resonator, described metallic bond zygonema, the a plurality of concatermers that connect and compose successively with inductor on the described base plate for packaging, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
The inductance value of the inductor that is connected with described piezoelectricity acoustic resonator further, be positioned at the interval (0nH, 10nH] in; And/or, the inductance value of the inductor on the described base plate for packaging be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, described piezoelectricity sound wave filtering chip is welded on the described base plate for packaging, each weld is connected with the substrate cabling of described substrate, each bar substrate cabling is connected with the inductor on the described base plate for packaging respectively, for the inductor that is connected with described piezoelectricity acoustic resonator, described substrate cabling, the a plurality of concatermers that connect and compose successively with inductor on the described base plate for packaging, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
The inductance value of the inductor that is connected with described piezoelectricity acoustic resonator further, be positioned at the interval (0nH, 10nH] in; And/or, the inductance value of the inductor on the described base plate for packaging be positioned at the interval (0nH, 10nH] in.
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, have at least two mutual inductance inductance value between the described metallic bond zygonema to be positioned in the interval [0.01nH, 1nH].
Comprise piezoelectricity sound wave filtering chip and base plate for packaging in another chip-packaging structure provided by the invention, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, each weld is connected with the substrate cabling of described substrate, have at least two mutual inductance inductance value between the described substrate cabling to be positioned in the interval [0.01nH, 1nH].
According to technical scheme of the present invention, can be by between inductance, introducing the transmission zero of the mode designing filter of mutual inductance.In the situation of having utilized above-mentioned mutual inductance, signal suppressing performance impact to filter is little, but relevant inductor can be selected small electric sense value, be conducive to obtain better filter high frequency performance, and the space that the inductor of small electric sense value takies is also less, also helps the debugging in research and development of products stage simultaneously.
Description of drawings
Accompanying drawing is used for understanding the present invention better, does not consist of improper restriction of the present invention.Wherein:
Fig. 1 is the schematic diagram according to the circuit theory of a kind of piezoelectricity acoustic wave filter of the prior art;
Fig. 2 A is the schematic diagram that has a kind of situation of mutual inductance in the filter circuit relevant with the embodiment of the invention;
Fig. 2 B is the schematic diagram that has the another kind of situation of mutual inductance in the filter circuit relevant with the embodiment of the invention;
Fig. 3 is the schematic diagram according to the filtering chip general structure relevant with the embodiment of the invention;
Fig. 4 A is the schematic diagram according to the first chip-packaging structure of the embodiment of the invention;
Fig. 4 B is the schematic diagram according to the second chip-packaging structure of the embodiment of the invention;
Fig. 4 C is the schematic diagram according to the third chip-packaging structure of the embodiment of the invention;
Fig. 5 A is the schematic diagram according to the 4th kind of chip-packaging structure of the embodiment of the invention;
Fig. 5 B is the schematic diagram according to the 5th kind of chip-packaging structure of the embodiment of the invention;
Fig. 5 C is the schematic diagram according to the 6th kind of chip-packaging structure of the embodiment of the invention;
Fig. 6 A is the schematic diagram according to the 7th kind of chip-packaging structure of the embodiment of the invention;
Fig. 6 B is the schematic diagram according to the 8th kind of chip-packaging structure of the embodiment of the invention;
Fig. 7 A is a schematic diagram of the filter freguency response relevant with the embodiment of the invention;
Fig. 7 B is another schematic diagram of the filter freguency response relevant with the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing example embodiment of the present invention is explained, to help understanding, they should be thought it only is exemplary comprising the various details of the embodiment of the invention.Therefore, those of ordinary skills will be appreciated that, can make various changes and modification to the embodiments described herein, and can not deviate from scope and spirit of the present invention.Equally, for clarity and conciseness, omitted the description to known function and structure in the following description.
The inventor finds in realizing process of the present invention, and the transmission zero of filter is subject to the impact of the mutual inductance between the inductance device in the circuit.With reference to figure 2A and Fig. 2 B, Fig. 2 A is the schematic diagram that has a kind of situation of mutual inductance in the filter circuit relevant with the embodiment of the invention.Shown in Fig. 2 A, there is mutual inductance M1 between inductance L 21 and the inductance L 22, Same Name of Ends is shown in the end of each inductance with stain, and for example stain 20.Like this, the transmission zero of filter moves to the low direction of frequency when M1 increases, and the filter transmission zero moved to the high direction of frequency when M1 reduced.Fig. 2 B is the schematic diagram that has the another kind of situation of mutual inductance in the filter circuit relevant with the embodiment of the invention.Among Fig. 2 B, have mutual inductance M2 between inductance L 22 and the inductance L 25, the transmission zero of filter moves to the high direction of frequency when M2 increases, and the filter transmission zero moved to the low direction of frequency when M2 reduced.Regulate the transmission zero of filter so can utilize mutual inductance.
The mode of utilizing mutual inductance to regulate the transmission zero of filter can be applied in the various practical structures of piezoelectricity acoustic wave filter, below illustrates.
Can regulate with the mutual inductance between the inductance in the filtering chip transmission zero of filter.Fig. 3 is the schematic diagram according to the filtering chip general structure relevant with the embodiment of the invention.
As shown in Figure 3, a plurality of piezoelectricity acoustic resonators are arranged in the filtering chip 30, whole with square frame 31 these piezoelectricity acoustic resonators of expression.Fig. 3 shows two that have a mutual inductance and whole 31 inductors that are connected 32,33 of piezoelectricity acoustic resonator.By adjusting the mutual inductance between the inductor 32,33, the transmission zero that can regulate filter.Other inductors are not shown.
For the filtering chip that is connected on the base plate for packaging, can select corresponding mutual inductance regulative mode according to packaged type.Common a kind of connected mode is to adopt metallic bond zygonema (hereinafter to be referred as making " bonding line ") between filtering chip and the base plate for packaging.Because in radio frequency (RF) frequency range, bonding line not only plays the effect that electricity connects filtering chip and base plate for packaging, and it also presents inductance characteristic, for example about 2GHz, diameter is that the inductance value of the bonding line of 1mil is about 1nH/mm, so bonding line can serve as the partial inductance of filtering chip.At radio frequency band, bonding line can outside radiation field, so has between the bonding line that to intercouple be the mutual inductance effect.So can regulate by the mutual inductance between the adjusting key zygonema transmission zero of filter.And the mutual inductance between the bonding line can realize by the relative position of adjusting between the bonding line.
With reference to figure 2A or Fig. 2 B, 5 inductance among the figure can be the inductors and the bonding line of outside and the concatermer of external inductors of expression filtering chip inside, it also can be the filtering chip that does not have the pattern of inductor for inside, the concatermer of the inductor of the bonding line that expression is outside and the outside (pin that also has chip between bonding line and the inductor, easy for describing, omit the description of pin, lower same).When the relative position between the adjusting key zygonema, just changed the mutual inductance between the concatermer that bonding line and inductor form.
Fig. 4 A is the schematic diagram according to the first chip-packaging structure of the embodiment of the invention.Shown in Fig. 4 A, be fixed with a filtering chip 41 on the base plate for packaging 40, inductor 421 and inductor 431 and unshowned other inductors are arranged in the filtering chip 41.Inductor 421 consists of concatermer 42 with the bonding line 422 of connecting, and inductor 431 consists of concatermer 43 with the bonding line 432 of connecting.Relative position between the adjusting key zygonema 422,432 just can change the size of mutual inductance between the concatermer 42,43.Other bonding lines are not shown.
Fig. 4 B is the schematic diagram according to the second chip-packaging structure of the embodiment of the invention.The difference of Fig. 4 B and Fig. 4 A is do not have inductor in the filtering chip 45 among Fig. 4 B, and inductor 462,472 is positioned on the base plate for packaging 44, consists of respectively concatermer 46,47 thereby be connected with bonding line 461,471 respectively.Relative position between the adjusting key zygonema 461,471 just can change the size of mutual inductance between the concatermer 46,47.Other bonding lines are not shown.
Fig. 4 C is the schematic diagram according to the third chip-packaging structure of the embodiment of the invention.Among Fig. 4 C, all do not have inductor inside and outside the filtering chip 49, connect by bonding line base plate for packaging 48.Can come by the relative position between the adjusting key zygonema size of mutual inductance between the adjusting key zygonema, for example the relative position between the adjusting key zygonema 491,492 just can change the size of mutual inductance between the bonding line 491,492.Other bonding lines are not shown.
Also can adopt the mode of flip-chip between filtering chip and the base plate for packaging, namely the pin of chip directly is welded on the base plate for packaging towards the base plate for packaging surface.Because the substrate cabling also has the physical property of the relevant inductance that is similar to bonding line, so just can regulate mutual inductance between the substrate cabling by regulating relative position between the substrate cabling.Inductance among Fig. 2 A or Fig. 2 B can represent the inductor and the substrate cabling of outside and the concatermer of external inductors of filtering chip inside, also can be the filtering chip that does not have the pattern of inductor for inside, the concatermer of the inductor of the substrate cabling that expression is outside and outside.When the relative position regulated between the substrate cabling, just changed the mutual inductance between the concatermer that substrate cabling and inductor form.
Fig. 5 A is the schematic diagram according to the 4th kind of chip-packaging structure of the embodiment of the invention.Shown in Fig. 5 A, be fixed with a filtering chip 51 on the base plate for packaging 50, inductor 521 and inductor 531 and unshowned other inductors are arranged in the filtering chip 51.Inductor 521 consists of concatermer 52 with the substrate cabling 522 of connecting, and inductor 531 consists of concatermer 53 with the substrate cabling 532 of connecting.Relative position between the adjusting substrate cabling 522,532 just can change the size of mutual inductance between the concatermer 52,53.Other substrate cablings are not shown.
Fig. 5 B is the schematic diagram according to the 5th kind of chip-packaging structure of the embodiment of the invention.The difference of Fig. 5 B and Fig. 5 A is do not have inductor in the filtering chip 55 among Fig. 5 B, and inductor 562,572 is positioned on the base plate for packaging 54, consists of respectively concatermer 56,57 thereby be connected with substrate cabling 561,571 respectively.Relative position between the adjusting substrate cabling 561,571 just can change the size of mutual inductance between the concatermer 56,57.
Fig. 5 C is the schematic diagram according to the 6th kind of chip-packaging structure of the embodiment of the invention.Shown in Fig. 5 C, filtering chip 59 is welded on the base plate for packaging 58, and the substrate cabling is arranged on the base plate for packaging 58.The size that can regulate mutual inductance between the substrate cabling by the relative position of regulating between the substrate cabling is for example regulated the size that relative position between the substrate cabling 591,592 just can change mutual inductance between the substrate cabling 591,592.Other substrate cablings are not shown.
Fig. 6 A is the schematic diagram according to the 7th kind of chip-packaging structure of the embodiment of the invention.As shown in Figure 6A, be fixed with a filtering chip 61 on the base plate for packaging 60, inductor 621 and inductor 631 and unshowned other inductors are arranged in the filtering chip 61.Inductor 623 on inductor 621, bonding line 622 and the base plate for packaging consists of concatermer 62; Inductor 633 on inductor 631, bonding line 632 and the base plate for packaging consists of concatermer 63.Relative position between the adjusting key zygonema 622,632 just can change the size of mutual inductance between the concatermer 62,63.Other bonding lines are not shown.
Fig. 6 B is the schematic diagram according to the 8th kind of chip-packaging structure of the embodiment of the invention.Shown in Fig. 6 B, be fixed with a filtering chip 65 on the base plate for packaging 64, inductor 661 and inductor 671 and unshowned other inductors are arranged in the filtering chip 65.Inductor 663 on inductor 661, substrate cabling 662 and the base plate for packaging consists of concatermer 66; Inductor 673 on inductor 671, substrate cabling 672 and the base plate for packaging consists of concatermer 67.Relative position between the adjusting substrate cabling 662,672 just can change the size of mutual inductance between the concatermer 66,67.Other substrate cablings are not shown.
As can be seen from the above description, by the relative position between adjusting key zygonema or the substrate cabling, can change the size of mutual inductance between the concatermer of bonding line or substrate cabling and inductor.In fact, for example also may there be mutual inductance between the inductor 421,431 or between the inductor 462,472 between the inductor, after devices such as planar spiral inductor, surface mount inductance of selected inductor and position are fixing, the mutual inductance that they cause is namely thereupon fixing, the position of adjusting key zygonema or substrate cabling again, change be exactly mutual inductance between the above-mentioned concatermer.When debugging, can keep or eliminate the mutual inductance between the inductor, again the position of adjusting key zygonema or substrate cabling.Result that generally speaking can the combined circuit simulation analysis selects regulative mode.
Through overtesting, the inductance value of the mutual inductance between the inductor 32,33 shown in Figure 3 can be adjusted in the interval [0.01nH, 1nH].Like this, the inductance value of inductor can interval (0nH, 10nH] in choose.The inductance value of the mutual inductance between the bonding line among Fig. 4 A to Fig. 5 B or the concatermer of substrate cabling and inductor can be adjusted in the interval [0.01nH, 1nH].Like this, the inductance value of inductor can interval (0nH, 10nH] in choose.
Illustrate that below in conjunction with Fig. 7 A and Fig. 7 B the above-mentioned mutual inductance that utilizes regulates the effect at the zero point of filter.Fig. 7 A is a schematic diagram of the filter freguency response relevant with the embodiment of the invention.Among Fig. 7 A, abscissa is frequency, and unit is GHz, and ordinate represents the insertion loss of filter, and unit is dB.Frequency response curve when curve 71 expressions do not utilize mutual inductance, this moment, a transmission zero of filter was positioned at the 1.905GHz place, and filter is about 55dB to the inhibition of signal, shown in the open circles on the curve 71.In inductance L 21 in utilizing Fig. 2 A and the situation of the mutual inductance M1 between the inductance L 22, the frequency response curve of filter is shown in curve 72, this moment, a transmission zero of filter was positioned at 1.864GHz frequency place, the inhibition of signal was about 54dB, shown in the filled circles on the curve 72.Can find out and utilize after the mutual inductance, obviously displacement of transmission zero, but the signal suppressing effect on the transmission zero differs very little.
Fig. 7 B is another schematic diagram of the filter freguency response relevant with the embodiment of the invention.Shown in Fig. 7 B is to utilize when having mutual inductance M2 between the inductance L 22 shown in Fig. 2 B and the inductance L 25 frequency response curve of filter.
Among Fig. 7 B, abscissa is frequency, and unit is GHz, and ordinate represents the insertion loss of filter, and unit is dB.Frequency response curve when curve 73 expressions do not utilize mutual inductance, this moment, a transmission zero of filter was positioned at the 1.905GHz place, and filter is about 55dB to the inhibition of signal, shown in the open circles on the curve 72.In the situation of utilizing the mutual inductance M2 between the inductance L 22 shown in Fig. 2 B and the inductance L 25, the frequency response curve of filter is shown in curve 74, this moment, a transmission zero of filter was positioned at 1.943GHz frequency place, the inhibition of signal was about 57dB, shown in the filled circles on the curve 72.Can find out and utilize after the mutual inductance, obviously displacement of transmission zero, but the signal suppressing effect on the transmission zero differs very little.
In the situation of having utilized above-mentioned mutual inductance, little for the inhibition impact of signal, but inductor can be selected small electric sense value, is conducive to obtain better filter high frequency performance, and the space that the inductor of small electric sense value takies is also less.
Above-mentioned embodiment does not consist of limiting the scope of the invention.Those skilled in the art should be understood that, depend on designing requirement and other factors, and various modifications, combination, sub-portfolio and alternative can occur.Any modification of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., all should be included within the protection range of the present invention.
Claims (16)
1. piezoelectricity acoustic wave filter, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, it is characterized in that,
In described inductor, have at least two mutual inductance inductance value between the inductor to be positioned in the interval [0.01nH, 1nH].
2. piezoelectricity acoustic wave filter according to claim 1 is characterized in that, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
3. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, it is characterized in that
A plurality of concatermers for described inductor and described metallic bond zygonema formation have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
4. chip-packaging structure according to claim 3 is characterized in that, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
5. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, described metallic bond zygonema is connected with the inductor on the described base plate for packaging respectively, it is characterized in that
A plurality of concatermers for described inductor and described metallic bond zygonema formation have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
6. chip-packaging structure according to claim 5 is characterized in that, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
7. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, weld is connected with the substrate cabling of described inductor and described base plate for packaging simultaneously, it is characterized in that
A plurality of concatermers for described inductor and described substrate cabling formation have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
8. chip-packaging structure according to claim 7 is characterized in that, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
9. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, each weld is connected with the substrate cabling of described substrate, each bar substrate cabling is connected with the inductor on the described base plate for packaging respectively, it is characterized in that
A plurality of concatermers for described inductor and described substrate cabling formation have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
10. chip-packaging structure according to claim 9 is characterized in that, the inductance value of described inductor be positioned at the interval (0nH, 10nH] in.
11. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, has many strip metals bonding line between described piezoelectricity sound wave filtering chip and the described base plate for packaging, described metallic bond zygonema is connected with the inductor on the described base plate for packaging respectively, it is characterized in that
For a plurality of concatermers that the inductor on the inductor that is connected with described piezoelectricity acoustic resonator, described metallic bond zygonema and the described base plate for packaging connects and composes successively, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
12. chip-packaging structure according to claim 11 is characterized in that,
The inductance value of the inductor that is connected with described piezoelectricity acoustic resonator be positioned at the interval (0nH, 10nH] in; And/or,
The inductance value of the inductor on the described base plate for packaging be positioned at the interval (0nH, 10nH] in.
13. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, and the inductor that is connected of a plurality of and described piezoelectricity acoustic resonator, described piezoelectricity sound wave filtering chip is welded on the described base plate for packaging, and each weld is connected with the substrate cabling of described substrate, and each bar substrate cabling is connected with the inductor on the described base plate for packaging respectively, it is characterized in that
For a plurality of concatermers that the inductor on the inductor that is connected with described piezoelectricity acoustic resonator, described substrate cabling and the described base plate for packaging connects and composes successively, have at least two mutual inductance inductance value between the concatermer to be positioned in the interval [0.01nH, 1nH].
14. chip-packaging structure according to claim 13 is characterized in that,
The inductance value of the inductor that is connected with described piezoelectricity acoustic resonator be positioned at the interval (0nH, 10nH] in; And/or,
The inductance value of the inductor on the described base plate for packaging be positioned at the interval (0nH, 10nH] in.
15. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, has many strip metals bonding line between described piezoelectricity acoustic wave filter and the described base plate for packaging, it is characterized in that, have at least two mutual inductance inductance value between the described metallic bond zygonema to be positioned in the interval [0.01nH, 1nH].
16. chip-packaging structure, comprise piezoelectricity sound wave filtering chip and base plate for packaging in the described chip-packaging structure, described piezoelectricity acoustic wave filter comprises a plurality of piezoelectricity acoustic resonators, described piezoelectricity acoustic wave filter is welded on the described base plate for packaging, each weld is connected with the substrate cabling of described substrate, it is characterized in that having at least two mutual inductance inductance value between the described substrate cabling to be positioned in the interval [0.01nH, 1nH].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210345115.5A CN102916675B (en) | 2012-09-17 | 2012-09-17 | Piezoelectric acoustic-wave filter and chip-packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210345115.5A CN102916675B (en) | 2012-09-17 | 2012-09-17 | Piezoelectric acoustic-wave filter and chip-packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102916675A true CN102916675A (en) | 2013-02-06 |
| CN102916675B CN102916675B (en) | 2018-03-23 |
Family
ID=47614929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210345115.5A Active CN102916675B (en) | 2012-09-17 | 2012-09-17 | Piezoelectric acoustic-wave filter and chip-packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102916675B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104702242A (en) * | 2013-12-06 | 2015-06-10 | 株式会社村田制作所 | Variable-frequency resonance circuit and variable-frequency filter |
| CN108023564A (en) * | 2016-10-31 | 2018-05-11 | 三星电机株式会社 | Wave filter and its manufacture method including bulk acoustic wave resonator |
| CN108288959A (en) * | 2013-05-08 | 2018-07-17 | 天津大学 | Piezoelectric acoustic wave resonator and filter |
| CN108807343A (en) * | 2018-07-23 | 2018-11-13 | 江苏卓胜微电子股份有限公司 | A kind of RF switch chip |
| CN109167128A (en) * | 2018-08-20 | 2019-01-08 | 武汉衍熙微器件有限公司 | A kind of method and its filter improving performance of filter |
| CN111200418A (en) * | 2020-01-15 | 2020-05-26 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave filters and signal processing equipment |
| CN111342814A (en) * | 2020-02-10 | 2020-06-26 | 诺思(天津)微系统有限责任公司 | A bulk acoustic wave filter and multiplexer and electronic equipment |
| CN111525908A (en) * | 2020-04-30 | 2020-08-11 | 诺思(天津)微系统有限责任公司 | Method for adjusting out-of-band rejection of filter, multiplexer and communication device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0318104A (en) * | 1989-06-15 | 1991-01-25 | Nomura Denki Kk | Coaxial dielectric resonator and its inductance adjusting method |
| CN1870426A (en) * | 2005-05-25 | 2006-11-29 | 富士通媒体部品株式会社 | Acoustic wave filter and acoustic wave duplexer |
| US20070024392A1 (en) * | 2005-07-28 | 2007-02-01 | Fujitsu Media Devices Limited And Fujitsu Limited | Resonant circuit, filter, and antenna duplexer |
| JP2010028640A (en) * | 2008-07-23 | 2010-02-04 | Ykc:Kk | Lumped constant filter |
-
2012
- 2012-09-17 CN CN201210345115.5A patent/CN102916675B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0318104A (en) * | 1989-06-15 | 1991-01-25 | Nomura Denki Kk | Coaxial dielectric resonator and its inductance adjusting method |
| CN1870426A (en) * | 2005-05-25 | 2006-11-29 | 富士通媒体部品株式会社 | Acoustic wave filter and acoustic wave duplexer |
| US20070024392A1 (en) * | 2005-07-28 | 2007-02-01 | Fujitsu Media Devices Limited And Fujitsu Limited | Resonant circuit, filter, and antenna duplexer |
| JP2010028640A (en) * | 2008-07-23 | 2010-02-04 | Ykc:Kk | Lumped constant filter |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108288959A (en) * | 2013-05-08 | 2018-07-17 | 天津大学 | Piezoelectric acoustic wave resonator and filter |
| CN104702242B (en) * | 2013-12-06 | 2017-11-21 | 株式会社村田制作所 | Frequency conversion resonance vibration circuit and variable frequency filter |
| CN104702242A (en) * | 2013-12-06 | 2015-06-10 | 株式会社村田制作所 | Variable-frequency resonance circuit and variable-frequency filter |
| CN108023564B (en) * | 2016-10-31 | 2021-06-15 | 三星电机株式会社 | Filter comprising a bulk acoustic wave resonator and method of manufacturing the same |
| CN108023564A (en) * | 2016-10-31 | 2018-05-11 | 三星电机株式会社 | Wave filter and its manufacture method including bulk acoustic wave resonator |
| CN108807343A (en) * | 2018-07-23 | 2018-11-13 | 江苏卓胜微电子股份有限公司 | A kind of RF switch chip |
| CN108807343B (en) * | 2018-07-23 | 2024-04-16 | 江苏卓胜微电子股份有限公司 | Radio frequency switch chip |
| CN109167128A (en) * | 2018-08-20 | 2019-01-08 | 武汉衍熙微器件有限公司 | A kind of method and its filter improving performance of filter |
| CN111200418A (en) * | 2020-01-15 | 2020-05-26 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave filters and signal processing equipment |
| CN111200418B (en) * | 2020-01-15 | 2021-01-08 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave filters and signal processing equipment |
| CN111342814A (en) * | 2020-02-10 | 2020-06-26 | 诺思(天津)微系统有限责任公司 | A bulk acoustic wave filter and multiplexer and electronic equipment |
| CN111525908A (en) * | 2020-04-30 | 2020-08-11 | 诺思(天津)微系统有限责任公司 | Method for adjusting out-of-band rejection of filter, multiplexer and communication device |
| CN111525908B (en) * | 2020-04-30 | 2021-12-28 | 诺思(天津)微系统有限责任公司 | Method for adjusting out-of-band rejection of filter, multiplexer and communication device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102916675B (en) | 2018-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102916675A (en) | Piezoelectric acoustic-wave filter and chip packaging structure | |
| EP2530838B1 (en) | Tunable filter | |
| CN106253877B (en) | Ladder-type acoustic wave filter and notch diplexer | |
| US7479846B2 (en) | Duplexer | |
| CN104662798B (en) | Acoustic wave filter device and duplexer | |
| US9998096B2 (en) | Wave separator | |
| CN105900337B (en) | High-frequency model | |
| EP1944867B1 (en) | Elastic wave filter apparatus | |
| CN111342814B (en) | Bulk acoustic wave filter, multiplexer and electronic equipment | |
| JP4640412B2 (en) | Elastic wave filter | |
| US8405472B2 (en) | Elastic wave filter device | |
| CN104221285B (en) | Ladder type acoustic surface wave filter | |
| CN104641556B (en) | Filter apparatus | |
| CN101180795B (en) | Saw splitter | |
| CN105453427A (en) | High-frequency module | |
| JP5804076B2 (en) | LC filter circuit and high frequency module | |
| US20200106419A1 (en) | Electro-acoustic rf filter with increased flank steepness, multiplexer and method of designing an electro-acoustic rf filter | |
| KR102329364B1 (en) | Acoustic wave filter unit, composite filter unit and multiplexer | |
| CN111162752A (en) | Bulk acoustic wave filter | |
| CN205792477U (en) | Low-pass filter with broadband suppression capability | |
| US9692388B2 (en) | High frequency module comprising a band-pass LC filter and a piezoelectric resonator | |
| WO2014156719A1 (en) | Band-pass filter | |
| WO2015098240A1 (en) | Filter device and duplexer | |
| JP5633708B2 (en) | Multilayer bandpass filter | |
| CN115986345B (en) | Filter, duplexer and multiplexer for improving nonlinear characteristics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |