CN102916107A - Composite cooling plate structure and method for packaging light-emitting diodes using it - Google Patents
Composite cooling plate structure and method for packaging light-emitting diodes using it Download PDFInfo
- Publication number
- CN102916107A CN102916107A CN2011102234804A CN201110223480A CN102916107A CN 102916107 A CN102916107 A CN 102916107A CN 2011102234804 A CN2011102234804 A CN 2011102234804A CN 201110223480 A CN201110223480 A CN 201110223480A CN 102916107 A CN102916107 A CN 102916107A
- Authority
- CN
- China
- Prior art keywords
- ceramic
- layer
- metal
- substrate
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 title claims description 6
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 105
- 239000002184 metal Substances 0.000 claims abstract description 105
- 239000000919 ceramic Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000003292 glue Substances 0.000 claims abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 claims 10
- 238000007747 plating Methods 0.000 claims 7
- 238000001459 lithography Methods 0.000 claims 4
- 230000008719 thickening Effects 0.000 claims 3
- 238000001312 dry etching Methods 0.000 claims 2
- 238000009713 electroplating Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 5
- 230000032683 aging Effects 0.000 abstract description 3
- 230000000191 radiation effect Effects 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 6
- 238000007493 shaping process Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 239000004568 cement Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
Abstract
A composite heat radiation plate structure and a method for packaging a light emitting diode by applying the same, the composite heat radiation plate structure comprises a metal substrate, at least one ceramic heat radiation structure and at least one welding layer, wherein the ceramic heat radiation structure is connected on the metal substrate through the welding layer, the ceramic heat radiation structure comprises a ceramic substrate, a first metal layer and a second metal layer, the first metal layer is arranged on the upper surface of the ceramic substrate and is a patterned circuit, the second metal layer is arranged on the lower surface of the ceramic substrate, the light emitting diode is directly arranged on the metal substrate and is connected to the first metal layer through a wire, and by means of metalizing the ceramic substrate and then connecting the ceramic substrate with the metal substrate, a good heat radiation effect is achieved, an insulating glue is not needed, the heat radiation property is improved, high voltage impact resistance is achieved, the aging problem is avoided, and the.
Description
Technical field
The present invention relates to a kind of composite radiating board structure, be particularly useful for encapsulation LED.
Background technology
With reference to figure 1, the schematic diagram of prior art cooling plate structure.Prior art cooling plate structure 1 comprises a metal substrate 10, a line layer 31 and an insulating cement 33, line layer 31 is to see through insulating cement 33 to be adhered on the metal substrate 10, and light-emitting diode 100 is connected on the line layer 31, and is connected with other line layer 31 through routing.
The problem of prior art maximum is that insulating cement 33 is the not good material of heat transfer property matter, and not high voltage withstanding impact, and high-voltage impact can be reached improvement with the thickness that increases insulating cement 33, but so that the relative variation of heat transfer property matter.Therefore, need a kind of cooling plate structure with good heat transfer property matter and high voltage withstanding impact.
Summary of the invention
Main purpose of the present invention is to provide a kind of composite radiating board structure, this composite radiating board structure comprises metal substrate, at least one ceramic heat-dissipating structure and at least one weld layer, composite radiating board structure of the present invention is mainly used in encapsulation LED, the ceramic heat-dissipating structure sees through weld layer and is connected on the metal substrate, each ceramic heat-dissipating structure comprises ceramic substrate, the first metal layer and the second metal level, the first metal layer is arranged at the upper surface of ceramic substrate, circuit for patterning, the second metal level is arranged at the lower surface of ceramic substrate, can be the circuit of patterning or the metal level of the whole lower surface of covering ceramic substrate.Light-emitting diode directly is arranged on the metal substrate, and is connected to the first metal layer through wire.
Another object of the present invention is to provide a kind of method of using the composite radiating board structure encapsulation LED, the method comprises ceramic heat-dissipating shaping structures step, engagement step, crystal grain Connection Step and rubber seal step.Ceramic heat-dissipating shaping structures step is to form metal level at the upper surface of at least one ceramic substrate and lower surface, and forms at least the circuit of patterning at upper surface, and forms at least one ceramic heat-dissipating structure.Engagement step is that the ceramic heat-dissipating structure is connected with metal substrate, and the crystal grain Connection Step is that light-emitting diode is directly connected on the metal substrate, and light-emitting diode is connected with the circuit of patterning.The rubber seal step is to finish the light-emitting diode of connection with resin-encapsulated.
Characteristics of the present invention are, composite radiating board structure of the present invention is with the upper and lower surface metallization of ceramic substrate, and at the surface of ceramic substrate formation individual layer or double-deck circuit, and the metal level of lower surface or circuit are so that can use welding manner to be connected with metal substrate, combine the great heat radiation effect of metal and ceramic substrate, and do not need to use insulating cement, and promote heat dissipating, high pressure resistant impact, more avoided aging problem, more reduced cost of manufacture.In addition, light-emitting diode directly is connected on the metal substrate, so that under the situation that increases high pressure resistant impact, also reach good radiating effect.
Description of drawings
Fig. 1 is the schematic diagram of prior art heat-radiating substrate;
Fig. 2 is the schematic diagram of composite radiating board structure of the present invention;
Fig. 3 is the flow chart that the present invention uses the method for composite radiating board structure encapsulation LED;
Fig. 4 is the thin section flow chart of ceramic heat-dissipating shaping structures step the first embodiment of the present invention;
Fig. 5 is the thin section flow chart of ceramic heat-dissipating shaping structures step the second embodiment of the present invention.
Embodiment
Below cooperation is graphic does more detailed description to embodiments of the present invention, and those of ordinary skill in the art can be implemented after studying this specification carefully according to this.
With reference to figure 2, the schematic diagram of composite radiating board structure of the present invention.As shown in Figure 2, composite radiating board structure 2 of the present invention, comprise metal substrate 10, at least one ceramic heat-dissipating structure 20 and at least one weld layer 40, composite radiating board structure 2 of the present invention is mainly used in encapsulation LED 100, metal substrate 10 is mainly copper or aluminium is made, ceramic heat-dissipating structure 20 sees through weld layer 40 and is connected on the metal substrate 10, each ceramic heat-dissipating structure 20 comprises ceramic substrate 21, the first metal layer 23 and the second metal level 25, the first metal layer 23 is arranged at the upper surface of ceramic substrate 21, circuit for patterning, the second metal level 25 is arranged at the lower surface of ceramic substrate 21, can be the circuit of patterning or the metal level of covering ceramic substrate 21 whole lower surfaces, the material of the first metal layer 23 and the second metal level 25 is copper, aluminium at least one of them, further, form a Gold plated Layer or a silver coating (not shown) on the surface of the first metal layer 23 and the second metal level 25.Weld layer 40 is generally tin cream for the welding material of conduction, and the second metal level 25 of ceramic heat-dissipating structure 20 bottoms is connected with metal substrate 10.Light-emitting diode 100 directly is arranged on the metal substrate 10, and is connected to the first metal layer 23 through wire.
With reference to figure 3, the present invention uses the flow chart of the method for composite radiating board structure encapsulation LED.The method S1 that the present invention uses the composite radiating board structure encapsulation LED comprises ceramic heat-dissipating shaping structures step S10, engagement step S30, crystal grain Connection Step S50 and rubber seal step S70.Ceramic heat-dissipating shaping structures step S10 forms metal level at the upper surface of at least one ceramic substrate and lower surface, and forms the circuit of patterning in the image transfer mode to the metal level of major general's upper surface, and forms at least one ceramic heat-dissipating structure.Engagement step S30 is connected the ceramic heat-dissipating structure with metal substrate, normally print solder paste heats and makes metal substrate and ceramic heat-dissipating structural engagement on the surface of metal substrate, crystal grain Connection Step S50 is directly connected in light-emitting diode on the metal substrate, and routing is connected light-emitting diode with the circuit of patterning.Rubber seal step S70 will finish the light-emitting diode of connection and routing with resin-encapsulated.
With reference to figure 4 and Fig. 5, be respectively the first embodiment and second embodiment of the thin section flow chart of ceramic heat-dissipating shaping structures step S10.As shown in Figure 4, the first embodiment of ceramic heat-dissipating shaping structures step S10 comprises ceramic substrate pre-treatment step S11, metal film forms step S13, coating thickens step S15, planarization step S17, first little shadow step S19, etching and stripping step S21, substrate surface treatment step S23, dividing processing step S25, ceramic substrate pre-treatment step S11 carries out the ultrasonic waves degreasing with a ceramic motherboard first, cleaning and baking, so that surface cleaning, metal film formation step S13 is the mode with evaporation or sputter, upper surface and lower surface at ceramic motherboard form respectively metal film, coating thickens step S15 and electroplates or the electroless plating mode, the thickness that thickens of metal film is the metal level greater than 5 μ m, and the thickness of metal level is preferably the scope of 20 μ m to 70 μ m.
Planarization step S17 is surface grinding to a flat surface with metal level.First little shadow step S19 is coated with first a wet film or a dry film is set on the metal level of the upper surface of ceramic motherboard at least, and form a photoresist layer, then expose with light shield, develop again and manifest the logicalnot circuit part of metal level, etching and stripping step S21 partly remove this logicalnot circuit with dry ecthing or wet etching mode, divest again photoresist layer and form circuit, further, first little shadow step S19 and etching and stripping step S21 carry out at the metal level of the lower surface of the metal level of the upper surface of ceramic motherboard and ceramic motherboard.Substrate surface treatment step S23 carries out gold-plated or silver-plated processing for this circuit, with the degree of adhering to of the routing that promotes light-emitting diode.Dividing processing step S25 is cut apart ceramic motherboard, and forms a plurality of ceramic heat-dissipating structures.
The second embodiment of ceramic heat-dissipating shaping structures step S10 comprises ceramic substrate pre-treatment step S11, metal film forms step S13, second little shadow step S27, coating thickens step S15, planarization step S17, substrate surface treatment step S23, etching and strip step S29, dividing processing step S25, ceramic substrate pre-treatment step S11, metal film forms step S13, dividing processing step S25 method is with the first embodiment, do not repeat them here, second little shadow step S27 is coated with first wet film at least or dry film is set and forms a photoresist layer on the metal level of the upper surface of ceramic motherboard, then expose with light shield, develop again and will manifest the circuit pack of metal level, coating thickens step S15, to electroplate or the electroless plating mode, circuit pack is thickened, planarization step S17, substrate surface treatment step S23 method is with the first embodiment, so difference is only at this circuit pack and this photoresist layer.Etching and strip step S29 remove logicalnot circuit metal level, photoresist layer partly, and the metal film of photoresist layer below, and form line layer.
Characteristics of the present invention are, composite radiating board structure of the present invention is with the upper and lower surface metallization of ceramic substrate, and at the surface of ceramic substrate formation individual layer or double-deck circuit, and the metal level of lower surface or circuit are so that can use welding manner to be connected with metal substrate, combine the great heat radiation effect of metal and ceramic substrate, and do not need to use insulating cement, and promote heat dissipating, more avoided aging problem, more reduced cost of manufacture.The present invention also is promoted to more than the 5KV from traditional 1.5KV, and light-emitting diode directly is connected on the substrate for the improvement of high-voltage impact, so that under the situation that increases high voltage withstanding impact, also reach good radiating effect.
The above person only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical spirit is lower do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234804A CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite cooling plate structure and method for packaging light-emitting diodes using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102234804A CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite cooling plate structure and method for packaging light-emitting diodes using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102916107A true CN102916107A (en) | 2013-02-06 |
Family
ID=47614408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102234804A Pending CN102916107A (en) | 2011-08-05 | 2011-08-05 | Composite cooling plate structure and method for packaging light-emitting diodes using it |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102916107A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956356A (en) * | 2014-04-29 | 2014-07-30 | 复旦大学 | Efficient heat conducting large-power LED integration package structure |
| CN113447052A (en) * | 2021-06-07 | 2021-09-28 | 武汉光迅科技股份有限公司 | Light receiving assembly and light sensing equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081562A (en) * | 1987-05-19 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Circuit board with high heat dissipations characteristic |
| US20060157862A1 (en) * | 2005-01-19 | 2006-07-20 | Fuji Electric Device Technology, Co., Ltd. | Semiconductor device and method for producing the same |
| CN102064265A (en) * | 2009-11-11 | 2011-05-18 | 钰桥半导体股份有限公司 | Semiconductor chip assembly with post/base heat spreader and substrate |
| CN102117877A (en) * | 2009-12-31 | 2011-07-06 | 钰桥半导体股份有限公司 | Semiconductor chip assembly |
| CN202178296U (en) * | 2011-08-09 | 2012-03-28 | 柏腾科技股份有限公司 | Composite cooling plate structure |
-
2011
- 2011-08-05 CN CN2011102234804A patent/CN102916107A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5081562A (en) * | 1987-05-19 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Circuit board with high heat dissipations characteristic |
| US20060157862A1 (en) * | 2005-01-19 | 2006-07-20 | Fuji Electric Device Technology, Co., Ltd. | Semiconductor device and method for producing the same |
| CN102064265A (en) * | 2009-11-11 | 2011-05-18 | 钰桥半导体股份有限公司 | Semiconductor chip assembly with post/base heat spreader and substrate |
| CN102117877A (en) * | 2009-12-31 | 2011-07-06 | 钰桥半导体股份有限公司 | Semiconductor chip assembly |
| CN202178296U (en) * | 2011-08-09 | 2012-03-28 | 柏腾科技股份有限公司 | Composite cooling plate structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956356A (en) * | 2014-04-29 | 2014-07-30 | 复旦大学 | Efficient heat conducting large-power LED integration package structure |
| CN113447052A (en) * | 2021-06-07 | 2021-09-28 | 武汉光迅科技股份有限公司 | Light receiving assembly and light sensing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5521130B1 (en) | Electronic component package and manufacturing method thereof | |
| CN102983124B (en) | Light emitting diode (LED) light source with cooling device | |
| TWI538591B (en) | Method for manufacturing multilayer ceramic heat dissipation circuit substrate and its product | |
| US9373762B2 (en) | Electronic part package | |
| JP6868455B2 (en) | Electronic component package and its manufacturing method | |
| JP2018049938A (en) | Semiconductor device | |
| US20100308707A1 (en) | Led module and method of fabrication thereof | |
| KR100917712B1 (en) | LED Array Module Using Aluminum Metal Substrate | |
| TW201225227A (en) | Method for manufacturing heat dissipation bulk of semiconductor device | |
| CN113241398B (en) | A COB light source package heat balance treatment process | |
| CN102916107A (en) | Composite cooling plate structure and method for packaging light-emitting diodes using it | |
| CN201887076U (en) | Improved Combination of Substrate and Heat Dissipation Structure | |
| CN105870113A (en) | LED light source structure and preparation method thereof | |
| TW201318235A (en) | Thermally enhanced optical package | |
| CN102447018A (en) | Improved combination of substrate and heat dissipation structure and method thereof | |
| CN202178296U (en) | Composite cooling plate structure | |
| TW201306332A (en) | Structure of composite heat dissipation plate and method of packaging light-emitting diode by applying the same | |
| US11152286B2 (en) | Power semiconductor module device | |
| CN202695550U (en) | Ceramic Heat Dissipation Substrate Structure for Light Emitting Diodes | |
| TWI506830B (en) | Heat dissipation substrate with insulating heat sink and its manufacturing method | |
| TWI576930B (en) | Circuit package of circuit component module and its product | |
| TWI600096B (en) | Circuit component packaging method and its products | |
| CN106931318B (en) | Light emitting component and manufacturing method thereof | |
| TWI538574B (en) | Electronic foundation with heat dissipation and method for making the same | |
| JP2017163130A (en) | Substrate and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130206 |