CN102914927A - Array substrate and method for manufacturing same - Google Patents
Array substrate and method for manufacturing same Download PDFInfo
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- CN102914927A CN102914927A CN2012104177247A CN201210417724A CN102914927A CN 102914927 A CN102914927 A CN 102914927A CN 2012104177247 A CN2012104177247 A CN 2012104177247A CN 201210417724 A CN201210417724 A CN 201210417724A CN 102914927 A CN102914927 A CN 102914927A
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- derby
- data line
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Abstract
An embodiment of the invention provides an array substrate and a method for manufacturing the same. The array substrate comprises a substrate, grid scanning lines, grid insulating layers, data lines, maintenance metal blocks, passivation layers and connecting electrodes, wherein the grid scanning lines are positioned on the substrate, the grid insulating layers are positioned on the grid scanning lines and the substrate, the data lines are positioned on the grid insulating layers, the maintenance metal blocks are positioned on the grid insulating layers and are electrically connected with the data lines, the passivation layers are positioned on the grid insulating layers and the maintenance metal blocks and are provided with passivation layer via holes or grooves, the connecting electrodes are used for being electrically connected with maintenance metal lines used for maintenance, and are connected with the maintenance metal blocks by the passivation layer via holes or grooves, and sufficiently large contact areas are provided by the connecting electrodes for being connected with the maintenance metal lines. When the data lines are broken, the maintenance metal lines are directly deposited on the connecting electrodes of the maintenance metal blocks, as the sufficiently large contact areas are provided by the connecting electrodes, contact areas among the maintenance metal lines and connecting electrodes of maintenance points are enlarged, and the maintenance success rate is increased.
Description
Technical field
The present invention relates to the liquid crystal panel manufacturing technology, refer to especially the method for a kind of array base palte and manufacturing array substrate.
Background technology
(TFT-LCD) is low in energy consumption for the Thin Film Transistor (TFT) array base palte, low cost of manufacture and radiationless, by array base palte and color membrane substrates box is formed, in the prior art, as shown in Figure 1, comprise on the array base palte: controlling grid scan line 1 and vertical with it data line 5, adjacent controlling grid scan line 1 and data line 5 have defined pixel region, each pixel region includes a TFT switch, the public electrode 11 of pixel electrode 10 and part, gate insulator 4, semiconductor active layer 3, the grid 2 of TFT switch, source electrode 6 and drain electrode 7, passivation layer 8 covers on above-mentioned each device, and above drain electrode 7, forming passivation layer via hole or groove 9, pixel electrode 10 is connected with the drain electrode 7 of TFT switch by passivation layer via hole or groove 9; For reducing the light leak in the pixel behind the box, the both sides that are parallel to data line in pixel form shield bars 12.TFT-LCD can lower the photic leakage current in the raceway groove, and shield bars 12 adopts the material identical with grid 2, finishes making in same photo-mask process (Mask); Wherein, can form memory capacitance 13 between the part of pixel electrode 10 and the controlling grid scan line 1.
When data line 5 fracture, as shown in Figure 2, need to be in data line 5 punchings, deposition maintenance metal wire 16 reconnects data line 5 by maintenance metal wire 16.
There are the following problems for prior art: during data line 5 fracture, as shown in Figures 2 and 3, need to break connecting hole 17 and deposition maintenance metal wire 16 at data line 5, by maintenance metal wire 16 data line 5 is reconnected, but connecting hole 17 is little with the contact area of maintenance metal wire 16, easily causes keeping in repair unsuccessfully.
Summary of the invention
The technical problem to be solved in the present invention provides the method for a kind of array base palte and manufacturing array substrate, be used for solving prior art beats connecting hole and deposition at data line and keeps in repair metal wire and reconnect in the process of data line, because the contact area between connecting hole and the maintenance metal wire is too small, easily causes keeping in repair failed defective.
The embodiment of the invention provides a kind of array base palte, comprising: substrate; Controlling grid scan line is positioned on the described substrate; Gate insulator is positioned on described controlling grid scan line and the substrate; Data line is positioned on the described gate insulator; The maintenance derby is positioned on the described gate insulator, is electrically connected with described data line; Passivation layer is positioned on described gate insulator and the maintenance derby, and has passivation layer via hole or groove; Connecting electrode, described connecting electrode is connected with described maintenance derby by described passivation layer via hole or groove, is used for being electrically connected between the contact area that provides enough large and the maintenance metal wire that keeps in repair usefulness.
In the described array base palte, described data line and maintenance derby adopt same material.
In the described array base palte, the material of connecting electrode is tin indium oxide, indium zinc oxide or aluminum zinc oxide.
In the described array base palte, also comprise: shield bars, be positioned on the described substrate, be parallel to described data line.
In the described array base palte, the maintenance derby comprises the organic material bead, and this organic material bead contains conductive silver glue.
A kind of method of manufacturing array substrate comprises: deposit the first metallic film at substrate, and form controlling grid scan line at described the first metallic film; Deposit gate insulator, described gate insulator are positioned on described controlling grid scan line and the substrate; Deposit the second metallic film forms data line and maintenance derby at described the second metallic film; Deposit passivation layer, described passivation layer is positioned on the described gate insulator, and has passivation layer via hole or groove; The connecting electrode that is connected with described maintenance derby through described passivation layer via hole or groove is set, and the contact area that described connecting electrode is used for providing enough large is electrically connected with keeping in repair between the metal wire.
In the described method, also comprise: by photoetching process and chemical etching technology, when forming described controlling grid scan line, described the first metallic film forms the grid of described controlling grid scan line, and public electrode and shield bars; The process of deposit gate insulator also comprises: deposit one thin film transistor (TFT); And, by photoetching process and chemical etching technology, the raceway groove above described grid forms active layer and described grid.
The beneficial effect of technique scheme of the present invention is as follows: maintenance derby 15 is electrically connected with data line 5, when data line 5 fracture, to keep in repair metal wire 16 Direct precipitations on the connecting electrode 14 of maintenance derby 15, because connecting electrode 14 provides enough large contact area, thereby increased contact area between the connecting electrode 14 of maintenance metal wire 16 and maintenace point, this has guaranteed that maintenance metal wire 16 can be enough large with the contact area of maintenance derby 15, so that data line 5 work after the maintenance are good, improved repairable rate.
Description of drawings
Fig. 1 represents the structural representation of prior art TFT-LCD array base palte;
Fig. 2 represents prior art repair data line schematic diagram;
Fig. 3 represents the cross-sectional schematic in prior art repair data line C-C cross section;
Fig. 4 represents the structural representation of a kind of array base palte of the embodiment of the invention;
Fig. 5 represent the embodiment of the invention will keep in repair metal wire be deposited on the maintenance derby connecting electrode on schematic diagram one;
Fig. 6 represent the embodiment of the invention will keep in repair metal wire be deposited on the maintenance derby connecting electrode on schematic diagram two;
Fig. 7 represents the method flow schematic diagram of embodiment of the invention manufacturing array substrate;
Controlling grid scan line 1
Semiconductor active layer 3
Passivation layer via hole or groove 9
Connecting electrode 14
Connecting hole 17.
Embodiment
For making the technical problem to be solved in the present invention, technical scheme and advantage clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
As shown in Figure 4, the single pixel vertical view of amorphous silicon film transistor (TFT) structure, the bottom grating structure that adopts back of the body raceway groove to corrode; One group of controlling grid scan line 1 and parallel with it public electrode 11 are arranged on the array base palte of TFT-LCD, and vertical with controlling grid scan line 1 one group of data line 5 and shield bars 12; Adjacent controlling grid scan line 1 and data line 5 have intersected to form pixel region, comprise in the pixel region: TFT switching device, pixel electrode 10 and a public electrode 11; Wherein, the TFT switching device is comprised of grid 2, source electrode 6, drain electrode 7, gate insulator 4 and semiconductor active layer 3, and pixel electrode 10 is connected with drain electrode 7 by passivation layer via hole or groove 9.
The embodiment of the invention provides a kind of array base palte, as shown in Figure 4, comprising:
Substrate;
Controlling grid scan line 1 is positioned on the described substrate;
Be used for realizing between the maintenance metal wire 16 with maintenance usefulness being connected the connecting electrode 14 that is electrically connected with described maintenance derby 15 by passivation layer via hole or groove 9, be electrically connected for enough large contact area being provided and keeping in repair between the maintenance metal wire 16 of usefulness.
The technical scheme that provides is provided, maintenance derby 15 is electrically connected with data line 5, when data line 5 fracture, to keep in repair metal wire 16 Direct precipitations on the connecting electrode 14 of maintenance derby 15, because connecting electrode 14 provides enough large contact area, thereby increased contact area between the connecting electrode 14 of maintenance metal wire 16 and maintenace point, this has guaranteed that maintenance metal wire 16 can be enough large with the contact area of maintenance derby 15, so that data line 5 work after the maintenance are good, improved repairable rate.
In the TFT-LCD array base palte, public electrode 11 is positioned on described controlling grid scan line 1 and the gate insulator 4, and parallel with described controlling grid scan line 1;
In a preferred embodiment, data line 5 and maintenance derby 15 adopt same material.
In a preferred embodiment, the material of connecting electrode 14 is tin indium oxide, indium zinc oxide or aluminum zinc oxide.
The material of pixel electrode 10 is tin indium oxide, indium zinc oxide or aluminum zinc oxide; Connecting electrode 14 is identical with the material that pixel electrode 10 adopts, and finishes making in same plated film, mask lithography and chemical etching technology.
In a preferred embodiment, shield bars 12 is positioned on the array base palte, is parallel to data line 5.
In the TFT-LCD array base palte, thin film transistor (TFT) is positioned at the intersection of controlling grid scan line 1 and data line 5, is coated with passivation layer 8 on this thin film transistor (TFT), is formed with described passivation layer via hole or groove 9 in the drain electrode 7 of described thin film transistor (TFT); The source electrode 6 of described thin film transistor (TFT) and described data line 5 are electrically connected;
In the array base palte, have several passivation layer via hole or groove 9, the effect of each passivation layer via hole or groove 9 is not quite similar.Wherein, the passivation layer via hole in the drain electrode of thin film transistor (TFT) or groove 9 are used for being connected with the drain electrode 7 of thin film transistor (TFT); Then be used to the direct connection between connecting electrode 14 and the maintenance derby 15 that interface channel is provided at least two passivation layer via hole or groove 9 near data line 5 positions.
In a preferred embodiment, the source electrode 6 of controlling grid scan line 1, data line 5, thin film transistor (TFT) and drain 7, and described maintenance derby 15 is individual layer or lamination layer structure that one of aluminium, chromium, tungsten, tantalum, titanium, molybdenum and aluminium nickel or combination in any consist of.Data line 5 is identical with the material that maintenance derby 15 adopts, and completes in same plated film, mask lithography and chemical etching technology.
Each embodiment provide is provided, as shown in Figure 4, on the array base palte of the TFT-LCD that makes, has one group of controlling grid scan line 1 and the public electrode 11 parallel with controlling grid scan line 1, and vertical with controlling grid scan line 1 one group of data line 5 and shield bars 12.
Adjacent controlling grid scan line 1 and data line 5 have intersected to form pixel region, and a pixel region includes a TFT switching device-thin film transistor (TFT), pixel electrode 10 and public electrode 11, gate insulator 4, semiconductor active layer 3; Thin film transistor (TFT) is by grid 2, source electrode 6 and drain and 7 form, and pixel electrode 10 is connected with drain electrode 7 by passivation layer via hole or groove 9.
Based on above-mentioned array base-plate structure, increased maintenance derby 15 in data line 5 one sides, and maintenance derby 15 is electrically connected with data line 5, keep in repair the identical metal material of derby 15 employings and data line 5.
As shown in Figure 5, use the metal identical with data line 5 to make in data line 5 one sides and keep in repair derby 15, and be electrically connected with data line 5.When data line 5 fracture, in the process of mantenance data line 5, to keep in repair metal wire 16 Direct precipitations on the connecting electrode 14 of maintenance derby 15, because maintenance derby 15 comprises the organic material bead, this organic material bead contains conductive silver glue, adopts laser that bead is smashed, so that the maintenance metal wire 16 that conductive silver glue is connected with color membrane substrates connects, to increase the contact area of maintenance metal wire 16 and data line 5, improved maintenance rate.
Wherein, connecting electrode 14 has conducting function, and covering on the maintenance derby 15 is in order to protect passivation layer via hole or the groove 9 on the maintenance derby 15.When the organic material bead that adopts laser will include conductive silver glue smashes, just can will keep in repair derby 15 by connecting electrode 14 and link together with maintenance metal wire 16.Conductive silver glue is the adhesive that has certain electric conductivity after a kind of curing or the drying, usually take matrix resin and conductive filler-conducting particles as principal ingredient, bonding effect by matrix resin is combined together to form conductive path to conducting particles, realizes being connected by the conduction of sticking material.
In above-described embodiment, the source electrode 6 of controlling grid scan line 1, data line 5, thin film transistor (TFT) and drain 7, public electrode 11, maintenance derby 15 and shield bars 12 materials can be one of the metal such as aluminium, chromium, tungsten, tantalum, titanium, molybdenum and aluminium nickel or alloy or combination in any, structure can be individual layer or lamination layer structure.Controlling grid scan line 1, public electrode 11 and shield bars 12 are finished making in same plated film, mask lithography and chemical etching technology, and adopt identical material; Data line 5 and maintenance derby 15 adopt same material, complete in same plated film, mask lithography and chemical etching technology; Gate insulator 4 adopts the materials such as silicon nitride or aluminium oxide, and pixel electrode 10 and connecting electrode 14 adopt the materials such as tin indium oxide, indium zinc oxide or aluminum zinc oxide.
As shown in Figure 6, the TFT-LCD array base palte obviously can have various modifications and variations, specifically can be by increasing or reducing exposure frequency and select different materials or combination of materials to make TFT-LCD of the present invention.
The embodiment of the invention provides a kind of method of manufacturing array substrate, as shown in Figure 7, comprising:
Step 705 arranges the connecting electrode 14 that is connected with described maintenance derby 15 through described passivation layer via hole or groove 9, and described connecting electrode 14 provides between enough large contact area and the maintenance metal wire 16 and is electrically connected.
In a preferred embodiment, also comprise: by photoetching process and chemical etching technology, form controlling grid scan line 1, grid 2, public electrode 11 and shield bars 12 at the first metallic film; Grid 2 is parts of controlling grid scan line 1, provides cut-in voltage for opening thin film transistor (TFT);
The process of deposit gate insulator 4 also comprises: the deposition film transistor; And, by photoetching process and chemical etching technology, the raceway groove above described grid 2 forms semiconductor active layer 3 and described grid 2.
Forming data line 5 at described the second metallic film also comprises: form the source electrode 6 of described data line 5, thin film transistor (TFT) and drain 7 at described the second metallic film by photoetching process and chemical etching technology, wherein, part source electrode 6 and part drain and 7 are overlapped on the described semiconductor active layer 3.
By photoetching process and chemical etching technology, the drain electrode 7 described passivation layer via hole of formation or the grooves 9 at thin film transistor (TFT) are connected with pixel electrode 10 by this passivation layer via hole or groove 9.
The technology that Application Example provides is made TFT-LCD, and manufacture process comprises:
Step 801 at array base palte deposition the first metallic film, forms controlling grid scan line 1, grid 2, public electrode 11 and shield bars 12 by photoetching process and chemical etching technology;
Step 802, consecutive deposition gate insulator 4 and amorphous silicon membrane on the array base palte of completing steps 801, by photoetching process and chemical etching technology grid 2 form semiconductor active layers 3 and above raceway groove.
Step 803, deposit the second metallic film on the array base palte of completing steps 802 forms data line 5, source electrode 6, drain electrode 7 by photoetching process and chemical etching technology, and wherein part source electrode 6 and part drain and 7 are overlapped on the semiconductor active layer 3; Thin film transistor (TFT) forms after making source electrode 6 and drain electrode 7 are finished.
Step 804, deposit passivation layer 8 on the array base palte of completing steps 803, form passivation layer via hole or groove 9 and the connecting hole 17 that is positioned at drain electrode 7 by photoetching process and chemical etching technology; Passivation layer via hole or groove 9 are delivered to drain voltage on the pixel electrode 10.
Step 805, the layer that is used for etching pixel electrode 10 in the array base palte deposition of completing steps 804, by photoetching process and chemical etching technology, form pixel electrode 10, connecting electrode 14 and maintenance derby 15, and pixel electrode 10 and drain electrode 7 are linked together.Wherein, the maintenance derby 15 formation integrative-structure that is connected with data line 5.
Compare with prior art, the array base palte of finishing is provided with maintenance derby 15 in data line 5 one sides, and maintenance derby 15 is connected with data line 5.Maintenance derby 15 contains the organic material bead of conductive silver glue, by laser bead is smashed, so that conductive silver glue is connected connections with the maintenance metal wire, to increase the contact area of maintenance metal wire 16 and data line 5, has improved repairable rate.
TFT-LCD of the present invention can also by following method manufacturing, comprise:
Step 901 is used magnetically controlled sputter method, exists in array base palte preparation a layer thickness
Extremely
Metallic film as the grid metallic film.
The material of grid metallic film adopts the metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, also can use the unitized construction of above-mentioned different materials film.By exposure technology and chemical etching technique, form controlling grid scan line 1, public electrode 11 and shield bars 12 at the certain area of array base palte with the gate mask version.
Step 902 is utilized chemical vapor deposition method consecutive deposition on array base palte
Arrive
Gate insulator 4, and
Arrive
Amorphous silicon membrane-semiconductor active layer 3; The material of gate insulator 4 is silicon nitride normally, also can use monox and silicon oxynitride etc.
After exposing with the mask of semiconductor active layer 3 amorphous silicon is carried out dry etching, form the silicon isolated island, and the gate insulator 4 between grid metal and the amorphous silicon plays the effect that stops etching.
Step 903 adopts and preparation controlling grid scan line 1 similar method, and the thickness that deposit one deck is similar to the grid metallic film on array base palte exists
Arrive
The second metallic film.
By forming data line 5, source electrode 6, drain electrode 7 and maintenance derby 15 in the certain area of mask on the second metallic film of source-drain electrode; Wherein, data line 5, source electrode 6, drain electrode 7 have identical thickness with shield bars 12, because adopt identical etching technics, so have the same metal wire angle of gradient after the etching, source electrode 6 and drain electrode 7 contact with the two ends of semiconductor active layer 3 respectively, form thin film transistor (TFT).
Step 904 adopts the method similar with preparing gate insulator 4 and semiconductor active layer 3, deposits a layer thickness at whole array base palte
Arrive
Passivation layer 8, the material of passivation layer 8 is silicon nitride or silicon dioxide normally.This moment controlling grid scan line 1, public electrode 11 and be coated with gate insulator 4 and passivation layer 8 above the shield bars 12, and data line 5 and be coated with the passivation layer 8 of same thickness above the maintenance derby 15; By the mask of passivation layer 8, utilize exposure and etching technics to form passivation layer via hole or groove 9 and the connecting hole 17 of drain electrode 7 parts.
Step 905 adopts the method similar with prepare gate insulator 4 and semiconductor active layer 3, deposits one deck pixel electrode layer at whole glass substrate;
Use the mask of transparency electrode, by identical processing step, finally form pixel electrode 10, connecting electrode 14, maintenance derby 15 and memory capacitance 13, transparency electrode commonly used is ITO or IZO, and thickness exists
Extremely
Between.
In the process of making TFT-LCD, also can be by increasing or reducing exposure frequency and select different materials or combination of materials to realize corresponding step, therefore, the structure of TFT-LCD obviously can have various modifications and variations.
Make among the TFT-LCD that forms, maintenance derby 15 is positioned at same layer with data line 5, maintenance derby 15 and data line 5 structure that is connected to form one, data line 5, public electrode 11 and shield bars 12 are finished in chemical etching process at same plated film, mask lithography, and have adopted identical material.The source electrode 6 of controlling grid scan line 11, data line 5, thin film transistor (TFT) and drain 7, individual layer or lamination layer structure that public electrode 11 or shield bars 12 consist of for one of aluminium, chromium, tungsten, tantalum, titanium, molybdenum and aluminium nickel or combination in any, the material of gate insulator 4 is silicon nitride, silicon dioxide or aluminium oxide etc., and the material of pixel electrode 10 and connecting electrode 14 is tin indium oxide, indium zinc oxide or aluminum zinc oxide etc.
Compared with prior art, make maintenance derby 15 by use the metal identical with data line 5 in data line 5 one sides, keep in repair derby 15 and be connected with data line 5.When the data line 5 of maintenance fracture, do not need drilling technology, but will keep in repair metal wire 16 Direct precipitations on the connecting electrode 14 of maintenance derby 15, owing to comprising the organic material bead on the maintenance derby 15, the organic material bead contains conductive silver glue, bead is smashed so that conductive silver glue is connected connection with the maintenance metal wire by laser, to increase the contact area of maintenance metal wire 16 and data line 5, improved repairable rate.
Adopt the TFT-LCD of the technology made that the embodiment of the invention provides obviously can carry out various forms of accommodations, so long as increase the maintenance metal in data line 5 one sides, and the maintenance metal is connected with data line 5 get final product.
The above is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. an array base palte is characterized in that, comprising:
Substrate;
Controlling grid scan line is positioned on the described substrate;
Gate insulator is positioned on described controlling grid scan line and the substrate;
Data line is positioned on the described gate insulator;
The maintenance derby is positioned on the described gate insulator, is electrically connected with described data line;
Passivation layer is positioned on described gate insulator and the maintenance derby, and has passivation layer via hole or groove;
Connecting electrode, described connecting electrode is connected with described maintenance derby by described passivation layer via hole or groove, is used for being electrically connected between the contact area that provides enough large and the maintenance metal wire that keeps in repair usefulness.
2. array base palte according to claim 1 is characterized in that,
Described data line and maintenance derby adopt same material.
3. array base palte according to claim 1 is characterized in that,
The material of described connecting electrode comprises tin indium oxide, indium zinc oxide or aluminum zinc oxide.
4. array base palte according to claim 1 is characterized in that, also comprises:
Shield bars is positioned on the described substrate, is parallel to described data line.
5. array base palte according to claim 1 is characterized in that,
The maintenance derby comprises the organic material bead, and this organic material bead contains conductive silver glue.
6. the method for a manufacturing array substrate is characterized in that, comprising:
Deposit the first metallic film at substrate, and form controlling grid scan line at described the first metallic film;
Deposit gate insulator, described gate insulator are positioned on described controlling grid scan line and the substrate;
Deposit the second metallic film forms data line and maintenance derby at described the second metallic film;
Deposit passivation layer, described passivation layer is positioned on the described gate insulator, and has passivation layer via hole or groove;
The connecting electrode that is connected with described maintenance derby through described passivation layer via hole or groove is set, and the contact area that described connecting electrode is used for providing enough large is electrically connected with keeping in repair between the metal wire.
7. method according to claim 6 is characterized in that, also comprises:
By photoetching process and chemical etching technology, when forming described controlling grid scan line, described the first metallic film forms the grid of described controlling grid scan line, and public electrode and shield bars;
The process of deposit gate insulator also comprises: the deposition film transistor; And, by photoetching process and chemical etching technology, the raceway groove above described grid forms active layer and described grid.
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| CN201210417724.7A CN102914927B (en) | 2012-10-26 | 2012-10-26 | Array substrate and method for manufacturing same |
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| CN201210417724.7A CN102914927B (en) | 2012-10-26 | 2012-10-26 | Array substrate and method for manufacturing same |
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| CN107068918A (en) * | 2017-05-12 | 2017-08-18 | 京东方科技集团股份有限公司 | A kind of preparation method of oled panel |
| CN108538853A (en) * | 2018-03-29 | 2018-09-14 | 武汉华星光电技术有限公司 | Display device and array substrate thereof |
| CN112631003A (en) * | 2020-12-30 | 2021-04-09 | 成都中电熊猫显示科技有限公司 | Array substrate and broken line repairing method of array substrate |
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| US20010035920A1 (en) * | 2000-05-01 | 2001-11-01 | Lg. Philips Lcd Co., Ltd. | Repair structure for liquid crystal display and method of repairing the same |
| CN101561598A (en) * | 2008-04-14 | 2009-10-21 | 北京京东方光电科技有限公司 | Array basal plate of liquid crystal display as well as manufacturing method and maintaining method thereof |
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| US5684547A (en) * | 1994-08-05 | 1997-11-04 | Samsung Electronics Co., Ltd. | Liquid crystal display panel and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107068918A (en) * | 2017-05-12 | 2017-08-18 | 京东方科技集团股份有限公司 | A kind of preparation method of oled panel |
| CN108538853A (en) * | 2018-03-29 | 2018-09-14 | 武汉华星光电技术有限公司 | Display device and array substrate thereof |
| WO2019184071A1 (en) * | 2018-03-29 | 2019-10-03 | 武汉华星光电技术有限公司 | Display device and array substrate thereof |
| CN108538853B (en) * | 2018-03-29 | 2019-12-31 | 武汉华星光电技术有限公司 | Display device and array substrate thereof |
| CN112631003A (en) * | 2020-12-30 | 2021-04-09 | 成都中电熊猫显示科技有限公司 | Array substrate and broken line repairing method of array substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102914927B (en) | 2015-06-24 |
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