CN102903746B - 一种大电流密度的横向超薄绝缘栅双极型晶体管 - Google Patents
一种大电流密度的横向超薄绝缘栅双极型晶体管 Download PDFInfo
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Abstract
一种大电流密度的横向超薄绝缘栅双极型晶体管，包括P型衬底，在P型衬底上设有埋氧层，在埋氧层上设有N型外延层，在N型外延层内设有N型阱区及P型基区，在P型基区内设有第一P型接触区和N型源区，在N型阱区内设有N型缓冲区，在N型阱区上设有场氧化层，在N型缓冲区内设有P型漏区，在N型外延层内设有由P型环形基区构成的P型基区阵列，所述P型基区阵列位于N型阱区与P型基区之间，在所述P型环形基区内设有第二P型接触区和N型环形源区，第二P型接触区位于N型环形源区内，本发明大大的增加了横向超薄绝缘栅双极型晶体管的电流密度，可以极大的提高智能功率模块的性能。
Description
技术领域
本发明涉及功率半导体器件，特别是涉及一种集成在超薄工艺平台上的大电流密度的横向超薄绝缘栅双极型晶体管。
背景技术
高压功率集成电路中的智能功率模块可用于各种领域，如驱动和控制各种工业与民用、单相与三相电机。而智能功率模块中的功率开关元件为整个智能功率模块的关键部分，作为功率开关元件的IGBT不仅具有MOSFET工作速度快、输入阻抗大、驱动电路简单，还具有双极性晶体管载流量大的优点。正因为如此，这些年，IGBT频繁的应用在功率集成电路中。在IGBT中，L-IGBT引起了我们的关注，因为它比较适合集成在高密度集成电路中。在功率器件中，大容量的输出电流能力是很重要的。但是对于超薄L-IGBT由于电导调制效应不够明显，电流密度很难提高。如何在超薄L-IGBT源端和漏端获得大电流和大击穿电压成为提高整个集成电路性能的关键。所以作为功率开关元件中的超薄L-IGBT如何获得大电流密度无疑是智能功率模块电路及工艺研究的重要内容。
现有L-IGBT已有各种提高电流密度的方法，在这些提高电流密度方法中最为有效和突出的为东芝公司的美国专利US5731603提到的采用双沟道来提高厚膜L-IGBT的电流密度。该结构中P型基区两侧都有N型外延层，因此在N型源区两侧形成导电沟道之后，N型外延层可以提供电流流动的路径，但是，由于超薄膜结构中P型基区很容易延伸到下面的埋氧层而导致能够提供电流流动路径的N型外延层被夹断，因此，US5731603专利中提到的提高电流密度的方法在超薄结构中是行不通的。
发明内容
本发明提供一种大电流密度的横向超薄绝缘栅双极型晶体管，本发明解决了超薄L-IGBT电流密度较小的问题，在不牺牲击穿电压的条件下提高了电流密度。
本发明采用如下技术方案：
一种大电流密度的横向超薄绝缘栅双极型晶体管，包括P型衬底，在P型衬底上设有埋氧层，在埋氧层上设有N型外延层且N型外延层的厚度为0.1~2μm，在N型外延层内设有N型阱区及P型基区，在N型阱区内设有N型缓冲区，在N型阱区上设有场氧化层，并且，N型缓冲区的一个边界与场氧化层的一个边界相抵，在N型缓冲区内设有P型漏区，在P型基区内设有第一P型接触区和N型源区，在N型外延层内设有由P型环形基区构成的P型基区阵列，所述P型基区阵列位于N型阱区与P型基区之间，在所述P型环形基区内设有第二P型接触区和N型环形源区，第二P型接触区位于N型环形源区内，在场氧化层的与N型环形源区相邻的边界区域表面设有第一多晶硅栅，且第一多晶硅栅自场氧化层的边界朝N型环形源区方向延伸至N型环形源区的上方，在第一多晶硅栅的延伸区域下方设有第一栅氧化层，在N型外延层的上方设有第二多晶硅栅，并且，第二多晶硅栅的一个边界延伸至N型环形源区的上方，第二多晶硅栅的另一个边界延伸至N型源区的上方，在第二多晶硅栅的下方设有第二栅氧化层，在场氧化层、第一多晶硅栅、第二多晶硅栅、P型基区、P型环形基区、第一P型接触区、N型源区、第二P型接触区、N型环形源区、N型缓冲区及P型漏区上设有介质隔离氧化层，在第一P型接触区、N型源区、第二P型接触区及N型环形源区上连接发射极金属连线，在P型漏区上连接集电极金属连线，在第一多晶硅栅和第二多晶硅栅上连接栅极金属连线。
与现有技术相比，本发明具有如下优点：
（1）本发明的一种大电流密度的横向超薄绝缘栅双极型晶体管采用了新结构，即在N型外延层（3）内设有由P型环形基区（6b）构成的P型基区阵列（17），所述P型基区阵列（17）位于N型阱区（4）与P型基区（6a）之间。相对于传统的源端只有1个P型基区的横向超薄绝缘栅双极型晶体管（图3），本发明实现了在栅压不断加大后，P型基区（6a）和P型环形基区（6b）的栅氧化层下面先出现耗尽层，当栅压达到阈值电压以后，P型基区（6a）和P型环形基区（6b）的栅氧化层下面出现反型层，这相当于增加了横向超薄绝缘栅双极型晶体管中寄生NMOS管的导电沟道，即增加了寄生NMOS管电流。由图1所示，在x方向和y方向的N型外延层（3）又可以提供电流流动的路径，那么寄生NMOS管电流就可以作为横向超薄绝缘栅双极型晶体管中PNP管的基区电流，使P型基区（6a）和P型环形基区（6b）内的第一P型接触区（7a）和第二P型接触区（7b）增加了收集空穴的能力，最终提高了横向超薄绝缘栅双极型晶体管的电流密度。
（2）本发明的一种大电流密度的横向超薄绝缘栅双极型晶体管，由于P型基区（6a）和由P型环形基区（6b）构成的P型基区阵列（17）导致导电沟道数目增加，与传统的只有1个P型基区的横向超薄绝缘栅双极型晶体管相比，在相同耐压下电流密度大，或相同电流密度时，具有更高的耐压。
（3）本发明的一种大电流密度的横向超薄绝缘栅双极型晶体管，完全基于现有的制备横向超薄绝缘栅双极型晶体管工艺，不增加额外的工艺步骤，制备简单。
附图说明
图1是本发明所述的一种大电流密度的横向超薄绝缘栅双极型晶体管示意图；
图2是为沿图1的I-I’线的横向剖面图；
图3为沿图1的II-II’线的横向剖面图；
图4是传统的横向超薄绝缘栅双极型晶体管结构的横向剖面图；
图5是本发明所述的一种大电流密度的横向超薄绝缘栅双极型晶体管（proposed structure）与传统的横向超薄绝缘栅双极型晶体管（conventionalstructure）的电流密度比较图；
图6是本发明所述的一种大电流密度的横向超薄绝缘栅双极型晶体管P型环形基区（P annular base region）构成的P型基区阵列行数增加后电流密度比较图；
图7是本发明所述的一种大电流密度的横向超薄绝缘栅双极型晶体管P型基区（P base region）与P型环形基区（P annular base region）间距变化后的电流密度比较图；
图8是本发明所述的一种大电流密度的横向超薄绝缘栅双极型晶体管P型环形基区（P annular base region）相邻边界间距变化后的电流密度比较图。
具体实施方式
参照图1、2、3，一种大电流密度的横向超薄绝缘栅双极型晶体管，包括：P型衬底1，在P型衬底1上设有埋氧层2，在埋氧层2上设有N型外延层3且N型外延层3的厚度为0.1~1.5μm，在N型外延层3内设有N型阱区4及P型基区6a，在N型阱区4内设有N型缓冲区5，在N型阱区4上设有场氧化层11，并且，N型缓冲区5的一个边界与场氧化层11的一个边界相抵，在N型缓冲区5内设有P型漏区9，在P型基区6a内设有第一P型接触区7a和N型源区8a，在N型外延层3内设有由P型环形基区6b构成的P型基区阵列17，所述P型基区阵列17位于N型阱区4与P型基区6a之间，在所述P型环形基区6b内设有第二P型接触区7b和N型环形源区8b，第二P型接触区7b位于N型环形源区8b内，在场氧化层11的与N型环形源区8b相邻的边界区域表面设有第一多晶硅栅12a，且第一多晶硅栅12自场氧化层11的边界朝N型环形源区8b方向延伸至N型环形源区8b的上方，在第一多晶硅栅12a的延伸区域下方设有第一栅氧化层10a，在N型外延层3的上方设有第二多晶硅栅12b，并且，第二多晶硅栅12b的一个边界延伸至N型环形源区8b的上方，第二多晶硅栅12的另一个边界延伸至N型源区8a的上方，在第二多晶硅栅12b的下方设有第二栅氧化层10b，在场氧化层11、第一多晶硅栅12a、第二多晶硅栅12b、P型基区6a、P型环形基区6b、第一P型接触区7a、N型源区8a、第二P型接触区7b、N型环形源区8b、N型缓冲区5及P型漏区9上设有介质隔离氧化层13，在第一P型接触区7a、N型源区8a、第二P型接触区7b及N型环形源区8b上连接发射极金属连线14，在P型漏区9上连接集电极金属连线15，在第一多晶硅栅12a和第二多晶硅栅12b上连接栅极金属连线16。
P型基区阵列17可以采用多行多列，也可以采用多行单列，在本实施例中，由P型环形基区6b构成的P型基区阵列17选择采用列数是1的P型基区阵列，行数不限，既可以是2行、3行、…、10行或者更多。只要保证P型环形基区的相邻边界之间的间距不变也就是可供电流流动的路径区域不变，随着P型环形基区6b构成的P型基区阵列17行数的增加，对电流密度影响不大。
参照图6，P型环形基区6b构成的P型基区阵列17行数的增加后的电流密度比较图。
本实施例还可以采用以下技术措施来进一步提高电流密度：
（1）P型基区（6a）与P型环形基区（6b）的相邻边界之间的间距为0.5~3μm，P型基区（6a）与P型环形基区（6b）的相邻边界之间的间距小于0.5μm，可供电流流动的区域过小，可以增加电流密度但是提升效果不明显，P型基区（6a）与P型环形基区（6b）的相邻边界之间的间距大于3μm，电流流动的路径过长，也可以增加电流密度但是提升效果不明显。参照图7，P型基区（6a）与P型环形基区（6b）的相邻边界之间的间距变化的电流密度比较图。
（2）相邻P型环形基区的相邻边界之间的间距为1~6μm，相邻P型环形基区的相邻边界之间的间距小于1μm，可供电流流动的区域过小，可以增加电流密度但是提升效果不明显，相邻P型环形基区的相邻边界之间的间距大于6μm，也可以增加电流密度但是提升效果不明显。参照图8，相邻P型环形基区的相邻边界之间的间距变化的电流密度比较图。
本发明采用如下方法来制备：
1、选择一块P型硅衬底，对其进行清洗，淀积氧化层，之后进行外延，淀积氮化硅、光刻、离子注入磷生成N型阱区，退火、去掉氮化硅、光刻、离子注入硼生成P型基区和P型环形基区；
2、然后离子注入砷和磷形成N型缓冲层，淀积氮化硅、光刻形成有源区，刻蚀氮化硅，接着进行场氧的生长，并进行场注，调整沟道阈值电压，然后进行栅氧化层生长，淀积刻蚀多晶硅形成第一多晶硅栅、第二多晶硅栅和多晶硅场板，源漏注入形成N型源区、N型环形源区、第一P型接触区、第二P型接触区和P型漏区，然后淀积场氧化层。
3、刻蚀场氧化层，形成N型源区、N型环形源区、第一P型接触区、第二P型接触区、第一多晶硅栅、第二多晶硅栅及P型漏区的金属电极引出孔，淀积金属层，刻蚀金属层形成横向超薄绝缘栅双极型晶体管的N型源区、N型环形源区、第一P型接触区、第二P型接触区的引出电极，第一多晶硅栅、第二多晶硅栅的引出电极和P型漏区的引出电极。最后，进行钝化处理。
Claims (1)
1.一种大电流密度的横向超薄绝缘栅双极型晶体管，包括：P型衬底（1），在P型衬底（1）上设有埋氧层（2），在埋氧层（2）上设有N型外延层（3）且N型外延层（3）的厚度为0.1~1.5μm，在N型外延层（3）内设有N型阱区（4）及P型基区（6a），在N型阱区（4）内设有N型缓冲区（5），在N型阱区（4）上设有场氧化层（11），并且，N型缓冲区（5）的一个边界与场氧化层（11）的一个边界相抵，在N型缓冲区（5）内设有P型漏区（9），在P型基区（6a）内设有第一P型接触区（7a）和N型源区（8a），其特征在于，在N型外延层（3）内设有由P型环形基区（6b）构成的P型基区阵列（17），所述P型基区阵列（17）位于N型阱区（4）与P型基区（6a）之间，在所述P型环形基区（6b）内设有第二P型接触区（7b）和N型环形源区（8b），第二P型接触区（7b）位于N型环形源区（8b）内，在场氧化层（11）与N型环形源区（8b）相邻的边界区域表面设有第一多晶硅栅（12a），且第一多晶硅栅（12 a）自场氧化层（11）的边界朝N型环形源区（8b）方向延伸至N型环形源区（8b）的上方，在第一多晶硅栅（12a）的延伸区域下方设有第一栅氧化层（10a），在N型外延层（3）的上方设有第二多晶硅栅（12b），并且，第二多晶硅栅（12b）的一个边界延伸至N型环形源区（8b）的上方，第二多晶硅栅（12b）的另一个边界延伸至N型源区（8a）的上方，在第二多晶硅栅（12b）的下方设有第二栅氧化层（10b），在场氧化层（11）、第一多晶硅栅（12a）、第二多晶硅栅（12b）、P型基区（6a）、P型环形基区（6b）、第一P型接触区（7a）、N型源区（8a）、第二P型接触区（7b）、N型环形源区（8b）、N型缓冲区（5）及P型漏区（9）上设有介质隔离氧化层（13），在第一P型接触区（7a）、N型源区（8a）、第二P型接触区（7b）及N型环形源区（8b）上连接发射极金属连线（14），在P型漏区（9）上连接集电极金属连线（15），在第一多晶硅栅（12a）和第二多晶硅栅（12b）上连接栅极金属连线（16）。
2. 根据权利要求1所述的大电流密度的横向超薄绝缘栅双极型晶体管，其特征在于，由P型环形基区（6b）构成的P型基区阵列（17）采用列数是1的P型基区阵列。
3. 根据权利要求1或2所述的大电流密度的横向超薄绝缘栅双极型晶体管，其特征在于，P型环形基区（6b）呈六边形、四边形或圆形。
4. 根据权利要求1所述的大电流密度的横向超薄绝缘栅双极型晶体管，其特征在于，P型基区（6a）与P型环形基区（6b）的相邻边界之间的间距为0.5~3μm。
5. 根据权利要求1所述的大电流密度的横向超薄绝缘栅双极型晶体管，其特征在于，相邻P型环形基区的相邻边界之间的间距为1~6μm。
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| CN101969050A (zh) * | 2010-08-27 | 2011-02-09 | 东南大学 | 一种绝缘体上硅可集成大电流n型组合半导体器件 |
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| CN102903746A (zh) | 2013-01-30 |
| US20150270377A1 (en) | 2015-09-24 |
| US9240469B2 (en) | 2016-01-19 |
| WO2014071673A1 (zh) | 2014-05-15 |
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