CN102903467B - Micro-resistance element with soft material layer and manufacturing method thereof - Google Patents
Micro-resistance element with soft material layer and manufacturing method thereof Download PDFInfo
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- CN102903467B CN102903467B CN201110214863.5A CN201110214863A CN102903467B CN 102903467 B CN102903467 B CN 102903467B CN 201110214863 A CN201110214863 A CN 201110214863A CN 102903467 B CN102903467 B CN 102903467B
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- 239000007779 soft material Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 196
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical group [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 2
- 239000000788 chromium alloy Substances 0.000 claims description 2
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 claims description 2
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 claims description 2
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000003365 glass fiber Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
技术领域 technical field
本发明有关微电阻元件，特别有关于具有软性材料层的微电阻元件。The present invention relates to micro-resistance elements, in particular to micro-resistance elements with soft material layers.
背景技术 Background technique
随着电子电路技术的持续发展，对于电阻元件的电阻值的稳定度要求日益增高。传统的晶片电阻元件的电阻温度系数(TemperatureCoefficientofResistance，TCR)等性能已逐渐无法满足高稳定性的要求，导致其在应用上受到限制。With the continuous development of electronic circuit technology, the requirement for the stability of the resistance value of the resistance element is increasingly higher. The temperature coefficient of resistance (Temperature Coefficient of Resistance, TCR) and other performances of traditional chip resistance elements have gradually been unable to meet the requirements of high stability, which has limited its application.
为了提升电阻元件的电阻值的热稳定度，如图1所示，一种公知的微电阻元件10，具有一陶瓷材料制成的基板11、一位于基板11的下表面的电阻层12、一位于基板11的上表面的铜箔层13、分别位于基板11的两端的端面电极14，以及一位于铜箔层13上的保护层15。藉由散热性佳的铜箔层13，辅助消散微电阻元件在操作时的热能，以达到提升微电阻元件的操作功率的目的。In order to improve the thermal stability of the resistance value of the resistance element, as shown in Figure 1, a kind of known micro-resistance element 10 has a substrate 11 made of a ceramic material, a resistance layer 12 positioned on the lower surface of the substrate 11, a A copper foil layer 13 is located on the upper surface of the substrate 11 , end electrodes 14 are respectively located at two ends of the substrate 11 , and a protection layer 15 is located on the copper foil layer 13 . The copper foil layer 13 with good heat dissipation can assist in dissipating the heat energy of the micro-resistance element during operation, so as to achieve the purpose of increasing the operating power of the micro-resistance element.
然而，在电子装置持续追求轻薄短小的趋势下，微电阻元件势必追随此趋势，朝更小的尺寸发展。但上述微电阻元件的基板，采用陶瓷材料所制成，由于陶瓷材料属硬脆，在加工时容易碎裂，因此难以使微电阻元件再进一步的缩小尺寸。However, under the trend of continuous pursuit of thinner and smaller electronic devices, the micro-resistive element is bound to follow this trend and develop towards a smaller size. However, the substrate of the above-mentioned micro-resistor element is made of ceramic material. Since the ceramic material is hard and brittle, it is easy to break during processing, so it is difficult to further reduce the size of the micro-resistor element.
此外，以往常用于粘合基板11与电阻层12或铜箔层13的胶材通常含有玻纤材质，以便在其硬化后提供较佳的支撑性，但由于玻纤材质在硬化后不具可挠性，也使得此微电阻元件在应用上受到限制。并且，玻纤材质的散热性较差，也阻挡热量由基板11朝电阻层12或铜箔层13传递，不利提升微电阻元件的操作功率。In addition, the adhesive materials commonly used to bond the substrate 11 and the resistance layer 12 or copper foil layer 13 usually contain glass fiber material to provide better support after hardening, but the glass fiber material is not flexible after hardening. It also limits the application of this micro-resistance element. Moreover, the heat dissipation of the glass fiber material is poor, and it also prevents heat from being transmitted from the substrate 11 to the resistive layer 12 or the copper foil layer 13 , which is not conducive to improving the operating power of the micro-resistive element.
发明内容 Contents of the invention
本发明的一目的，在于提供一种微电阻元件，无须采用陶瓷材料所制成的基板，以便可进一步缩小其尺寸。An object of the present invention is to provide a micro-resistor element without using a substrate made of ceramic material, so that its size can be further reduced.
为了达成上述目的，本发明的具有软性材料层的微电阻元件，包含一电阻层、一软性材料层以及一电极层。软性材料层位于该电阻层上方。电极层具有位于该电阻层下方且相互分离的第一电极部及第二电极部。In order to achieve the above object, the micro-resistor element with a soft material layer of the present invention includes a resistance layer, a soft material layer and an electrode layer. A layer of soft material is located above the resistive layer. The electrode layer has a first electrode portion and a second electrode portion which are located below the resistance layer and separated from each other.
本发明提供的具有软性材料层的微电阻元件的制造方法，包含：提供一电阻层；将一软性材料层贴合至该电阻层上方；以及将一电极层形成于该电阻层下方，该电极层具有相互分离的第一电极部及第二电极部。The method for manufacturing a micro-resistance element with a soft material layer provided by the present invention includes: providing a resistance layer; pasting a soft material layer above the resistance layer; and forming an electrode layer below the resistance layer, The electrode layer has a first electrode part and a second electrode part separated from each other.
此外，本发明提供的另一具有软性材料层的微电阻元件的制造方法，包含：提供直接相互接合的一软性材料层以及一电阻层；以及将一电极层形成于该电阻层下方，该电极层具有相互分离的第一电极部及第二电极部。In addition, another method for manufacturing a micro-resistance element with a flexible material layer provided by the present invention includes: providing a flexible material layer and a resistance layer directly bonded to each other; and forming an electrode layer under the resistance layer, The electrode layer has a first electrode part and a second electrode part separated from each other.
本发明的有益效果在于，无须采用陶瓷材料所制成的基板，在制作上可较不受限制，可进一步缩小其尺寸。The beneficial effect of the present invention is that there is no need to use a substrate made of ceramic material, and the production is relatively unlimited, and its size can be further reduced.
以下结合附图和具体实施例对本发明进行详细描述，但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
附图说明 Description of drawings
图1为公知微电阻元件的剖面示意图；Fig. 1 is a schematic cross-sectional view of a known micro-resistance element;
图2为本发明微电阻元件的第一实施例的剖视图；Fig. 2 is the sectional view of the first embodiment of the micro-resistance element of the present invention;
图3为本发明微电阻元件的第二实施例的剖视图；Fig. 3 is the sectional view of the second embodiment of the micro-resistance element of the present invention;
图4为本发明微电阻元件的第三实施例的剖视图；Fig. 4 is the cross-sectional view of the third embodiment of the micro-resistance element of the present invention;
图5为本发明微电阻元件的第四实施例的剖视图；Fig. 5 is the cross-sectional view of the fourth embodiment of the micro-resistance element of the present invention;
图6A至图6G为本发明微电阻元件的制造方法的各步骤示意图；以及6A to 6G are schematic diagrams of each step of the manufacturing method of the micro-resistance element of the present invention; and
图7A至图7E为本发明微电阻元件的另一制造方法的各步骤示意图。7A to 7E are schematic diagrams of steps of another manufacturing method of the micro-resistor element of the present invention.
其中，附图标记Among them, reference signs
10微电阻元件10 micro-resistive elements
11基板11 substrate
12电阻层12 resistive layers
13铜箔层13 copper foil layers
14端面电极14 end electrode
15保护层15 layers of protection
100软性材料层100 layers of soft material
110电阻层110 resistance layer
111缺口111 gap
120电极层120 electrode layers
121第一电极部121 first electrode part
122第二电极部122 second electrode part
126第一外焊层126 first outer welding layer
127第二外焊层127 second outer welding layer
130胶层130 glue layer
140第一保护层140 first protective layer
150第二保护层150 second protective layer
160金属层160 metal layers
161沟槽161 Groove
162第一金属片162 first metal sheet
164第二金属片164 second metal sheet
170离形膜170 release film
20微电阻元件20 microresistive elements
30微电阻元件30 microresistive elements
40微电阻元件40 microresistive elements
50微电阻元件50 microresistive elements
具体实施方式 detailed description
下面结合附图和具体实施例对本发明技术方案进行详细的描述，以更进一步了解本发明的目的、方案及功效，但并非作为本发明所附权利要求保护范围的限制。The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments to further understand the purpose, solution and effect of the present invention, but it is not intended to limit the scope of protection of the appended claims of the present invention.
请参见图2，为本发明的微电阻元件的第一实施例。该微电阻元件20主要包括有一电阻层110、一位于电阻层110上方的软性材料层100、一位于电阻层110下方的电极层120，以及一用以将电阻层110黏合至软性材料层100的下表面的胶层130。Please refer to FIG. 2 , which is the first embodiment of the micro-resistance element of the present invention. The micro-resistance element 20 mainly includes a resistance layer 110, a soft material layer 100 above the resistance layer 110, an electrode layer 120 below the resistance layer 110, and a bonding resistance layer 110 to the soft material layer. The glue layer 130 on the lower surface of 100.
电阻层110为镍铜合金、镍铬合金、铁铬合金或铜锰合金所制成。于本实施例中，电阻层110以厚度为50～150μm之间的镍铜合金片材为例说明。电阻层110可为一完整的矩形片材，或者，其上更可形成有特定形状的开孔或凹槽，使具有预设的电阻值。The resistance layer 110 is made of nickel-copper alloy, nickel-chromium alloy, iron-chromium alloy or copper-manganese alloy. In this embodiment, the resistive layer 110 is illustrated by taking a nickel-copper alloy sheet with a thickness of 50-150 μm as an example. The resistance layer 110 can be a complete rectangular sheet, or can be formed with holes or grooves of a specific shape, so as to have a preset resistance value.
软性材料层100的材质为聚酰亚胺(Polyimide，PI)或聚乙烯对苯二甲酸酯(polyethyleneTerephthalate，PET)等化学稳定性佳的可挠性材质，其厚度可在12～45μm之间。The soft material layer 100 is made of a flexible material with good chemical stability such as polyimide (PI) or polyethylene terephthalate (PET), and its thickness can be between 12-45 μm. between.
胶层130的材质可为环氧树脂或压克力树脂等，厚度约为13～102μm。The material of the adhesive layer 130 can be epoxy resin or acrylic resin, etc., and the thickness is about 13-102 μm.
电极层120包含有设置于电阻层110下表面的相反两侧的一第一电极部121与一第二电极部122。第一电极部121及第二电极部122的材质为铜或铜合金。此外，本实施例的微电阻元件可进一步包含包覆第一电极部121的一第一外焊层126，以及包覆第二电极部122的一第二外焊层127，用于与其他外部元件焊接。第一外焊层126及第二外焊层127可包含利用电镀、溅镀等工艺形成的单层或多层焊锡层，例如镍层及锡层。The electrode layer 120 includes a first electrode portion 121 and a second electrode portion 122 disposed on opposite sides of the lower surface of the resistance layer 110 . The material of the first electrode part 121 and the second electrode part 122 is copper or copper alloy. In addition, the micro-resistor element of this embodiment may further include a first outer solder layer 126 covering the first electrode portion 121, and a second outer solder layer 127 covering the second electrode portion 122 for connecting with other external Component soldering. The first outer solder layer 126 and the second outer solder layer 127 may include single or multiple layers of solder, such as nickel and tin, formed by electroplating, sputtering and other processes.
为了避免电阻层110受到环境的污染或氧化，可在电阻层110的下表面上，且位于第一电极部121及第二电极部122之间的位置处，覆盖第一保护层140。此外，本实施例的微电阻元件20更可于软性材料层100的上表面上覆盖一第二保护层150。第一保护层140及第二保护层150的材质可为环氧树脂或压克力树脂。In order to prevent the resistance layer 110 from being polluted or oxidized by the environment, the first protection layer 140 may be covered on the lower surface of the resistance layer 110 at a position between the first electrode portion 121 and the second electrode portion 122 . In addition, the microresistive element 20 of this embodiment can further cover a second protection layer 150 on the upper surface of the soft material layer 100 . The material of the first protective layer 140 and the second protective layer 150 can be epoxy resin or acrylic resin.
由于本发明的微电阻元件不具有难以加工的陶瓷基板，其在制作上可较不受限制，可进一步缩小其尺寸。此外，由于软性材料层100具有可挠性，配合使用的胶层130也具有可挠性，使得微电阻元件20整体可获得较佳的可挠性，因此增加了其可应用的范围。Since the micro-resistor element of the present invention does not have a difficult-to-process ceramic substrate, its production is less limited, and its size can be further reduced. In addition, since the soft material layer 100 is flexible, the adhesive layer 130 used in conjunction is also flexible, so that the micro-resistor element 20 as a whole can obtain better flexibility, thus increasing its applicable range.
并且，也因为软性材料层100容易制作及加工，可达成更薄的厚度，亦使得本发明的微电阻元件20可具有更低的热阻抗。本发明的胶层130也由于无须采用玻纤材质，具有较佳的导热特性。Moreover, because the soft material layer 100 is easy to manufacture and process, it can achieve a thinner thickness, which also makes the micro-resistance element 20 of the present invention have lower thermal resistance. The adhesive layer 130 of the present invention also has better thermal conductivity because it does not need to use glass fiber material.
请参见图3，为本发明的微电阻元件的第二实施例，与第一实施例的差异处在于，本实施例的微电阻元件30更包含夹置在软性材料层100与第二保护层150之间的一金属层160。藉金属层160的较佳导热特性，提高微电阻元件30的散热效果。本实施例中，金属层160可为厚度8～35μm的铜或铜合金，或其他散热较佳的金属材质。Please refer to FIG. 3 , which is the second embodiment of the micro-resistance element of the present invention. The difference with the first embodiment is that the micro-resistance element 30 of this embodiment further includes a soft material layer 100 and a second protective layer. A metal layer 160 between layers 150 . The heat dissipation effect of the micro-resistor element 30 is improved by virtue of the better thermal conductivity of the metal layer 160 . In this embodiment, the metal layer 160 can be copper or copper alloy with a thickness of 8-35 μm, or other metal materials with better heat dissipation.
请参见图4，为本发明的第三实施例的微电阻元件40，与第二实施例的差异处在于，本实施例的微电阻元件40夹置在软性材料层100与第二保护层150之间的金属层为相互分离的一第一金属片162和一第二金属片164。第一金属片162和第二金属片164的形状不限，可依实际散热需求所设计。在本实施例中，第二保护层150同时覆盖第一金属片162和第二金属片164，且填入第一金属片162和第二金属片164之间的区域。实际实施时，第二保护层150也可仅填入第一金属片162和第二金属片164之间的区域，而不覆盖第一金属片162和第二金属片164。第一金属片162及第二金属片164的材质可为铜或铜合金，厚度可在8μm到35μm之间。Please refer to FIG. 4 , which is the micro-resistance element 40 of the third embodiment of the present invention. The difference from the second embodiment is that the micro-resistance element 40 of this embodiment is sandwiched between the soft material layer 100 and the second protective layer. The metal layers between 150 are a first metal sheet 162 and a second metal sheet 164 separated from each other. The shapes of the first metal sheet 162 and the second metal sheet 164 are not limited, and can be designed according to actual cooling requirements. In this embodiment, the second protection layer 150 covers both the first metal sheet 162 and the second metal sheet 164 , and fills the area between the first metal sheet 162 and the second metal sheet 164 . In practice, the second protection layer 150 may also only fill in the area between the first metal sheet 162 and the second metal sheet 164 , without covering the first metal sheet 162 and the second metal sheet 164 . The material of the first metal sheet 162 and the second metal sheet 164 can be copper or copper alloy, and the thickness can be between 8 μm and 35 μm.
请参见图5，为本发明的微电阻元件的第四实施例，与第一实施例的差异处在于，本实施例的微电阻元件50不具有用以将电阻层110黏合至软性材料层100的下表面的胶层，电阻层110是直接的与软性材料层100接合。Please refer to FIG. 5 , which is the fourth embodiment of the micro-resistance element of the present invention. The difference from the first embodiment is that the micro-resistance element 50 of this embodiment does not have a function for bonding the resistance layer 110 to the soft material layer. The adhesive layer on the lower surface of 100 , the resistance layer 110 is directly bonded to the soft material layer 100 .
以下，详述上述本发明的微电阻元件的制造方法。参阅图6A至图6G，首先，如图6A所示，提供一软性材料层100，以及一胶层130。软性材料层100上表面附着有一金属层160。胶层130附着在一离形膜170上，当将胶层130贴附在软性材料层100上后，可将离形膜170撕除。然后，如图6B所示，将软性材料层100藉由胶合层130贴合至电阻层110上，并热压合软性材料层100及电阻层110，使软性材料层100与电阻层110藉胶合层130紧密粘合，形成一如图6C所示的组合板体。Hereinafter, the manufacturing method of the microresistor element of the present invention described above will be described in detail. Referring to FIGS. 6A to 6G , firstly, as shown in FIG. 6A , a soft material layer 100 and an adhesive layer 130 are provided. A metal layer 160 is attached to the upper surface of the soft material layer 100 . The adhesive layer 130 is attached to a release film 170 , and after the adhesive layer 130 is attached to the soft material layer 100 , the release film 170 can be torn off. Then, as shown in FIG. 6B, the flexible material layer 100 is bonded to the resistance layer 110 through the adhesive layer 130, and the flexible material layer 100 and the resistance layer 110 are thermocompressed to make the soft material layer 100 and the resistance layer 110 are closely bonded by the glue layer 130 to form a combined board body as shown in FIG. 6C .
接着，如图6D，对电阻层110进行蚀刻形成缺口111，用以调整电阻层110的电阻值。并且，对金属层160进行蚀刻形成沟槽161，以形成两相互分离的第一金属片162及第二金属片164。Next, as shown in FIG. 6D , the resistive layer 110 is etched to form notches 111 for adjusting the resistance value of the resistive layer 110 . Moreover, the metal layer 160 is etched to form a trench 161 to form two separate first metal sheets 162 and second metal sheets 164 .
然后，如图6E所示，藉由电镀、压合或焊接等方式将具有导电功能的第一电极部121及第二电极部122形成于电阻层110的下表面的两相反侧。Then, as shown in FIG. 6E , the first electrode portion 121 and the second electrode portion 122 having a conductive function are formed on two opposite sides of the lower surface of the resistance layer 110 by means of electroplating, pressing or welding.
接着，如图6F所示，于第一电极部121与第二电极部122之间的电阻层110的下表面上形成第一保护层140，以避免电阻层110受到环境污染或氧化。并且，更可于该软性材料层100的上表面上形成第二保护层150，以进一步提供支撑微电阻元件的强度。Next, as shown in FIG. 6F , a first protection layer 140 is formed on the lower surface of the resistance layer 110 between the first electrode portion 121 and the second electrode portion 122 to prevent the resistance layer 110 from being polluted or oxidized by the environment. Furthermore, a second protection layer 150 can be formed on the upper surface of the soft material layer 100 to further provide strength for supporting the micro-resistor element.
最后，如图6G所示，形成分别包覆第一电极部121与第二电极部122的第一外焊层126及第二外焊层127，以增加第一电极部121与第二电极部122的接着强度以及增强微电阻元件与电路板之间的焊接强度。Finally, as shown in FIG. 6G, a first outer solder layer 126 and a second outer solder layer 127 covering the first electrode portion 121 and the second electrode portion 122 are formed to increase the number of first electrode portions 121 and the second electrode portion. 122 bonding strength and enhance the welding strength between the micro resistance element and the circuit board.
需特别说明的是，在上述制造方法中，一开始所提供的软性材料层100，其上表面附着有一金属层160。实际实施时，亦可仅保留软性材料层100本身进行上述制造方法。在具有金属层160的情况下，本实施例的制造方法可制造出图3或图4的微电阻元件。不具有金属层160的情况下，本实施例的制造方法可制造出图2的微电阻元件。It should be noted that, in the above manufacturing method, the soft material layer 100 provided at the beginning has a metal layer 160 attached to its upper surface. In actual implementation, only the soft material layer 100 itself may be retained to carry out the above-mentioned manufacturing method. In the case of having the metal layer 160 , the manufacturing method of this embodiment can manufacture the microresistive element shown in FIG. 3 or FIG. 4 . Without the metal layer 160 , the manufacturing method of this embodiment can manufacture the micro-resistor element shown in FIG. 2 .
如图7A至图7E所示，为本发明的微电阻元件的另一制造方法。如图7A所示，提供一直接相互接合的软性材料层100以及电阻层110。软性材料层100以及电阻层110之间不具有用以粘合两者的胶层。第一种方式，可将软性材料层100直接形成于电阻层110上，例如先将液态的软性材料涂布或印刷于电阻层110上，然后，使该液态软性材料固化，以形成附着于电阻层110上的软性材料层100。第二种方式，则可将电阻层110以成膜方法形成于软性材料层100上，例如可采用厚膜及薄膜工艺将电阻层110形成于软性材料层100上。As shown in FIG. 7A to FIG. 7E , it is another manufacturing method of the micro-resistor element of the present invention. As shown in FIG. 7A , a flexible material layer 100 and a resistive layer 110 are provided that are directly bonded to each other. There is no glue layer between the soft material layer 100 and the resistance layer 110 for bonding them together. In the first way, the flexible material layer 100 can be directly formed on the resistance layer 110, for example, a liquid soft material is first coated or printed on the resistance layer 110, and then the liquid soft material is solidified to form The soft material layer 100 attached to the resistance layer 110 . In the second way, the resistive layer 110 can be formed on the soft material layer 100 by a film-forming method, for example, the resistive layer 110 can be formed on the soft material layer 100 by thick film and thin film processes.
接着，如图7B所示，藉由电镀、压合或焊接等方式将具有导电功能的第一电极部121及第二电极部122形成于电阻层110的下表面的两相反侧。并且，在本实施例中，更在软性材料层100上形成金属层160。需说明的是，金属层160的目的是用以提高微电阻元件的散热性，可视实际需求加以移除。Next, as shown in FIG. 7B , the first electrode portion 121 and the second electrode portion 122 having a conductive function are formed on opposite sides of the lower surface of the resistance layer 110 by electroplating, pressing or welding. Moreover, in this embodiment, the metal layer 160 is further formed on the soft material layer 100 . It should be noted that the purpose of the metal layer 160 is to improve the heat dissipation of the micro-resistor element, and it can be removed according to actual needs.
如图7C所示，对电阻层110进行蚀刻形成缺口111，用以调整电阻层110的电阻值。并且，对金属层160进行蚀刻形成沟槽161，以形成两相互分离的第一金属片162及第二金属片164。As shown in FIG. 7C , the resistive layer 110 is etched to form notches 111 for adjusting the resistance value of the resistive layer 110 . Moreover, the metal layer 160 is etched to form a trench 161 to form two separate first metal sheets 162 and second metal sheets 164 .
如图7D所示，于第一电极部121与第二电极部122之间的电阻层110的下表面上形成第一保护层140，以避免电阻层110受到环境污染或氧化。并且，更可于该软性材料层100的上表面上形成第二保护层150，以进一步提供支撑微电阻元件的强度。As shown in FIG. 7D , a first protection layer 140 is formed on the lower surface of the resistance layer 110 between the first electrode portion 121 and the second electrode portion 122 to prevent the resistance layer 110 from being polluted or oxidized by the environment. Furthermore, a second protection layer 150 can be formed on the upper surface of the soft material layer 100 to further provide strength for supporting the micro-resistor element.
如图7E所示，形成分别包覆第一电极部121与第二电极部122的第一外焊层126及第二外焊层127，以增加第一电极部121与第二电极部122的接着强度以及增强微电阻元件与电路板之间的焊接强度。As shown in FIG. 7E , a first outer solder layer 126 and a second outer solder layer 127 covering the first electrode portion 121 and the second electrode portion 122 are formed to increase the bonding between the first electrode portion 121 and the second electrode portion 122. Then the strength and enhance the welding strength between the micro resistance element and the circuit board.
当然，本发明还可有其它多种实施例，在不背离本发明精神及其实质的情况下，熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形，但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Certainly, the present invention also can have other multiple embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and deformations according to the present invention, but these corresponding Changes and deformations should belong to the scope of protection of the appended claims of the present invention.
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| CN105590712A (en) * | 2014-11-15 | 2016-05-18 | 旺诠股份有限公司 | Manufacturing method of micro-impedance resistor and micro-impedance resistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201087845Y (en) * | 2007-10-31 | 2008-07-16 | 颜琼章 | Chip type current sensing assembly structure |
| CN101364463A (en) * | 2007-08-10 | 2009-02-11 | 斐成企业股份有限公司 | Chip resistor and manufacturing method thereof |
| CN101369478A (en) * | 2008-06-20 | 2009-02-18 | 杨金波 | Nickel or nickel base alloy electrode sheet type resistor and method of producing the same |
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| CN1695209A (en) * | 2002-09-30 | 2005-11-09 | 通用电气公司 | Techniques for fabricating a resistor on a flexible base material |
| CN101364463A (en) * | 2007-08-10 | 2009-02-11 | 斐成企业股份有限公司 | Chip resistor and manufacturing method thereof |
| CN201087845Y (en) * | 2007-10-31 | 2008-07-16 | 颜琼章 | Chip type current sensing assembly structure |
| CN101369478A (en) * | 2008-06-20 | 2009-02-18 | 杨金波 | Nickel or nickel base alloy electrode sheet type resistor and method of producing the same |
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