CN102856188A - Wet etching method for gallium nitride-based device - Google Patents
Wet etching method for gallium nitride-based device Download PDFInfo
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- CN102856188A CN102856188A CN2012102779073A CN201210277907A CN102856188A CN 102856188 A CN102856188 A CN 102856188A CN 2012102779073 A CN2012102779073 A CN 2012102779073A CN 201210277907 A CN201210277907 A CN 201210277907A CN 102856188 A CN102856188 A CN 102856188A
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- gallium
- nitride
- based devices
- wet etching
- etching method
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 53
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000001039 wet etching Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 230000003647 oxidation Effects 0.000 claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000012670 alkaline solution Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 17
- 230000006378 damage Effects 0.000 abstract description 5
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000000089 atomic force micrograph Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- LUMVCLJFHCTMCV-UHFFFAOYSA-M potassium;hydroxide;hydrate Chemical compound O.[OH-].[K+] LUMVCLJFHCTMCV-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种氮化镓基器件的湿法腐蚀方法，其步骤包括：在氮化镓基器件表面淀积保护层；在保护层上涂敷光刻胶，并对待腐蚀区域进行光刻；刻蚀待腐蚀区域的保护层；去除剩余光刻胶；对氮化镓基器件在高温条件下进行氧化处理；将氧化处理后的氮化镓基器件置于腐蚀性溶液中进行腐蚀。本发明可制得槽底平整、台阶边缘光滑的腐蚀槽，并能有效减少对器件造成的损伤，适用于氮化镓基器件的隔离工艺以及其它腐蚀工艺。
The invention provides a wet etching method for gallium nitride-based devices, the steps of which include: depositing a protective layer on the surface of the gallium nitride-based device; coating photoresist on the protective layer, and performing photoetching on the area to be etched; Etching the protective layer of the area to be etched; removing the remaining photoresist; oxidizing the gallium nitride-based device under high temperature conditions; placing the oxidized gallium nitride-based device in a corrosive solution for etching. The invention can produce an etching groove with a flat groove bottom and a smooth step edge, can effectively reduce damage to devices, and is suitable for the isolation process and other corrosion processes of gallium nitride-based devices.
Description
Technical field
The invention belongs to microelectronics technology, relate to the lithographic technique of semiconductor device, be specifically related to a kind of wet etching method of gallium-nitride-based devices.
Background technology
Device take AlGaN/GaN as material foundation is referred to as gallium-nitride-based devices, AlGaN/GaN hetero junction field effect pipe (heterostructure field effect transistors for example, HFET), heterojunction bipolar transistor (heterostructure bipolar transistor, HBT) etc.Gallium-nitride-based devices has the advantages such as working temperature height, breakdown field is powerful, cut-off frequency is high, power density is large, is the first-selection in the high-power field of future microwave, more becomes the nearly during the last ten years research emphasis in microwave power device field.
Be different from the traditional Si device system, the chemistry of GaN sill and physical property are all highly stable, to such an extent as to current its etching technics mainly is take ion etching as main dry etch process, but this technique can be given GaN base device injury inevitably, and device performance is descended.
Summary of the invention
The object of the present invention is to provide a kind of wet etching method of gallium-nitride-based devices, can make the etching tank that bottom land is smooth, step edge is smooth, and can effectively reduce the damage that device is caused.
For achieving the above object, the present invention adopts following technical scheme:
A kind of wet etching method of gallium-nitride-based devices, its step comprises:
1) at gallium-nitride-based devices surface deposition protective layer:
2) apply photoresist at described protective layer, and the photoetching corrosion figure;
3) etching is treated the protective layer of corrosion area;
4) remove the residue photoresist;
5) gallium-nitride-based devices is carried out oxidation processes under hot conditions;
6) place corrosive solution to corrode the gallium-nitride-based devices after the oxidation processes.
Further, described gallium-nitride-based devices comprises that AlGaN/GaN heterojunction device, LED device etc. are based on the semiconductor device of gallium nitride material characteristic.
Further, described protective layer can adopt SiO
2Or the material such as SiN.
Further, the method for described etching includes but not limited to: 1) RIE(reactive ion etching, Reactive Ion Etching) process; 2) BOE(Buffer Oxide Etch, the buffering etching solution) the solution immersion treatment.
Further, the method for described deposit includes but not limited to: PECVD(Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition), low-pressure chemical vapor deposition, optical thin film deposition; The preferred PECVD method that adopts.
Further, described photoresist can adopt the materials such as AZ5214; The modes such as contact photolithography are adopted in described photoetching.
Further, carry out described oxidation processes by oxidation furnace, Temperature Setting is 600-900 ℃, and the time is 30min-10h.Can according to the groove depth that will corrode and application, make corresponding modification to the temperature and time of oxidation processes.
Further, described corrosive solution can be alkaline solution, can be acid solution also, includes but not limited to:
A) potassium hydroxide solution or sodium hydroxide solution: its mass concentration is 15%-25%, and its temperature is 50 ℃-100 ℃, and etching time is 5-60 minute;
B) strong acid class solution, such as rare nitric acid, watery hydrochloric acid, hydrofluoric acid and dilute sulfuric acid etc.: its mass concentration is the laboratory typical concentrations, and its temperature is 50 ℃-100 ℃, and etching time is 5-60 minute.
The wet etching method of gallium-nitride-based devices of the present invention for gallium nitride-based material, can obtain the deep trouth greater than 150nm, and its bottom land is smooth, and step edge is smooth, can effectively avoid the damage that causes to device as main dry etch process take ion etching.The inventive method can be applied to the isolation technology of gallium-nitride-based devices, also can be applicable to other etching process of gallium nitride-based material, such as corrosion of enhancement device grid groove etc.
Description of drawings
Fig. 1 is the flow chart of steps of the wet etching method of gallium-nitride-based devices of the present invention.
Fig. 2 is the atomic force microscope images of the isolation channel shoulder height of the embodiment of the invention.
Fig. 3 is the atomic force microscope images of the isolation channel bottom land pattern of the embodiment of the invention.
Fig. 4 is the atomic force microscope images of the isolation channel three-dimensional structure of the embodiment of the invention.
Embodiment
Below by specific embodiment and cooperate accompanying drawing, the present invention is described in detail.
The present invention to the principle that gallium-nitride-based devices carries out wet etching is: at first carry out oxidation processes under hot conditions; Then be soaked in the alkaline solution of constant temperature and corrode.The GaN material at high temperature (is generally more than 600 ℃), can be oxidized, form the oxide of Ga, and the N element is then with N
2Form leave.And the oxide of Ga is amphoteric oxide, can be dissolved in highly basic or strong acid solution at a certain temperature, thereby stays the etching tank structure.
Fig. 1 is the flow chart of steps of wet etching method of the gallium-nitride-based devices of present embodiment.The below is specifically described the method take the isolation technology of AlGaN/GaN HMET as example.The preparation process of this isolation channel comprises:
1) adopt the PECVD method to prepare the SiO that thickness is 500nm on GaN base device surface
2Protective layer.
This step prepares SiO
2The purpose of layer is the non-isolation channel of protection zone, i.e. device area not oxidized and damage under the high-temperature oxygen environment.
2) at described SiO
2Coating photoresist on the layer, and photoetching corrosion figure.
The domain that present embodiment adopts is the isolation structure domain, and the photoresist of employing is AZ5214; Adopt the contact photolithography method to carry out photoetching.
3) etching is treated the SiO of corrosion area
2Protective layer.
The purpose of this step is to etch away the SiO that treats corrosion area
2Protective layer exposes out the isolation channel zone, is convenient to follow-up oxidation, but not the SiO of corrosion area
2Protective layer can not be etched away because the protection of photoresist is arranged.This step employing RIE(reactive ion etching) method is carried out etching.
4) remove the residue photoresist.Adopt the method for organic washing to remove photoresist, solvent is acetone and other organic solvent.
5) step 4) gained gallium-nitride-based devices is put in the oxidation furnace under the purity oxygen environment and carries out oxidation processes.
The purpose in front four steps is before the print oxidation, will not need the zone SiO of oxidation
2Protective layer protects, and needs the zone of oxidation exposed out, carries out oxidation in this step.The Temperature Setting of oxidation is 900 ℃, and the time is 9 hours.
6) gallium-nitride-based devices after the oxidation processes is soaked in potassium hydroxide solution and corrodes, namely make isolation channel after the taking-up.
In this step, the temperature constant of potassium hydroxide solution is 70 ℃; Wherein the ratio of saturated potassium hydroxide solution and water is 1:4, and being converted into mass concentration is 19.7%; Etching time is 30 minutes.
Fig. 2,3 and 4 is for adopting atomic force microscope (AFM) that above-described embodiment gained isolation channel is detected the image of gained, and wherein: Fig. 2 is for being the shoulder height image of isolation channel; The bottom land feature image of Fig. 3 isolation channel; Fig. 4 is the three-dimensional structure image of isolation channel.Can find out, the isolation channel (isolation channel) of this wet etching method preparation, its shoulder height is about 150nm, shown in Fig. 2 upper right corner; Its trench bottom is smooth, and average roughness Ra is 10.7nm; And step edge is neatly smooth.
In above-described embodiment, described gallium-nitride-based devices can be that AlGaN/GaN heterojunction device, LED device etc. are based on the semiconductor device of gallium nitride material characteristic.
In above-described embodiment, described protective layer is except adopting SiO
2Can also adopt the materials such as SiN outward.
In above-described embodiment, step 3) can also adopt BOE(Buffer Oxide Etch except adopting the RIE method to carry out the etching, the buffering etching solution) etc. solution carry out immersion treatment, finish etching.
In above-described embodiment, described deposit can also be adopted the methods such as low-pressure chemical vapor deposition, optical thin film deposition except adopting the PECVD method.
In above-described embodiment, when carrying out oxidation processes by oxidation furnace, temperature can be adjusted in 600-900 ℃ of scope, and the time is 30min-10h.Can according to the groove depth that will corrode and application, make corresponding modification to the temperature and time of oxidation processes.
In above-described embodiment, step 6) can adopt alkaline solution to corrode, and can be acid solution also, includes but not limited to:
A) potassium hydroxide solution or sodium hydroxide solution: its mass concentration is 15%-25%, and its temperature is 50 ℃-100 ℃, and etching time is 5-60 minute;
B) strong acid class solution, such as rare nitric acid, watery hydrochloric acid, hydrofluoric acid and dilute sulfuric acid etc.: its mass concentration is the laboratory typical concentrations, and its temperature is 50 ℃-100 ℃, and etching time is 5-60 minute.
Above embodiment is only in order to technical scheme of the present invention to be described but not limit it; those of ordinary skill in the art can make amendment or is equal to replacement technical scheme of the present invention; and not breaking away from the spirit and scope of the present invention, protection scope of the present invention should be as the criterion so that claim is described.
Claims (10)
1. the wet etching method of a gallium-nitride-based devices, its step comprises:
1) at gallium-nitride-based devices surface deposition protective layer:
2) apply photoresist at described protective layer, and the photoetching corrosion figure;
3) etching is treated the protective layer of corrosion area;
4) remove the residue photoresist;
5) gallium-nitride-based devices is carried out oxidation processes under hot conditions;
6) place corrosive solution to corrode the gallium-nitride-based devices after the oxidation processes.
2. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, described gallium-nitride-based devices comprises the AlGaN/GaN heterojunction device, based on the LED device of gallium nitride material characteristic.
3. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, the method for described deposit comprises: plasma enhanced chemical vapor deposition, low-pressure chemical vapor deposition, optical thin film deposition.
4. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, described protective layer is SiO
2Or SiN.
5. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, adopts RIE method or BOE solution immersion treatment method to carry out described etching.
6. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, carries out described oxidation processes by oxidation furnace.
7. the wet etching method of gallium-nitride-based devices as claimed in claim 6 is characterized in that, the temperature of carrying out described oxidation processes is 600-900 ℃, and the time is 30min-10h.
8. the wet etching method of gallium-nitride-based devices as claimed in claim 1 is characterized in that, described corrosive solution is alkaline solution or acid solution.
9. the wet etching method of gallium-nitride-based devices as claimed in claim 8, it is characterized in that: described corrosive solution is potassium hydroxide solution or sodium hydroxide solution, and its mass concentration is 15%-25%, and temperature is 50 ℃-100 ℃, and etching time is 5-60 minute.
10. the wet etching method of gallium-nitride-based devices as claimed in claim 8 is characterized in that, described corrosive solution is a kind of in the following acid solution: rare nitric acid, watery hydrochloric acid, hydrofluoric acid, dilute sulfuric acid.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258739A (en) * | 2013-05-13 | 2013-08-21 | 北京大学 | Grooved-gate gallium-nitride-based enhancement device preparation method based on self-stopped etch |
| CN104282548A (en) * | 2014-09-12 | 2015-01-14 | 电子科技大学 | Etching method for III-V-group compound semiconductor materials |
| CN106257624A (en) * | 2016-08-29 | 2016-12-28 | 北京代尔夫特电子科技有限公司 | A kind of caustic solution of compound semiconductor |
| CN106444293A (en) * | 2016-09-27 | 2017-02-22 | 易美芯光（北京）科技有限公司 | Preparation method of metal pattern |
| WO2017101535A1 (en) * | 2015-12-18 | 2017-06-22 | 北京代尔夫特电子科技有限公司 | Wet corrosion method of group iii nitride |
| CN107045975A (en) * | 2016-02-05 | 2017-08-15 | 北京大学 | The preparation method for Ohmic contact of being slotted based on the gallium nitride-based material that self-stopping technology is etched |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258739A (en) * | 2013-05-13 | 2013-08-21 | 北京大学 | Grooved-gate gallium-nitride-based enhancement device preparation method based on self-stopped etch |
| CN103258739B (en) * | 2013-05-13 | 2016-12-28 | 北京大学 | The preparation method of notched gates nitridation gallio enhancement device based on self-stopping technology etching |
| CN104282548A (en) * | 2014-09-12 | 2015-01-14 | 电子科技大学 | Etching method for III-V-group compound semiconductor materials |
| WO2017101535A1 (en) * | 2015-12-18 | 2017-06-22 | 北京代尔夫特电子科技有限公司 | Wet corrosion method of group iii nitride |
| CN107045975A (en) * | 2016-02-05 | 2017-08-15 | 北京大学 | The preparation method for Ohmic contact of being slotted based on the gallium nitride-based material that self-stopping technology is etched |
| CN106257624A (en) * | 2016-08-29 | 2016-12-28 | 北京代尔夫特电子科技有限公司 | A kind of caustic solution of compound semiconductor |
| CN106444293A (en) * | 2016-09-27 | 2017-02-22 | 易美芯光（北京）科技有限公司 | Preparation method of metal pattern |
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