CN102842681A - Organic electroluminescent device and preparation method thereof - Google Patents
Organic electroluminescent device and preparation method thereof Download PDFInfo
- Publication number
- CN102842681A CN102842681A CN2011101679355A CN201110167935A CN102842681A CN 102842681 A CN102842681 A CN 102842681A CN 2011101679355 A CN2011101679355 A CN 2011101679355A CN 201110167935 A CN201110167935 A CN 201110167935A CN 102842681 A CN102842681 A CN 102842681A
- Authority
- CN
- China
- Prior art keywords
- layer
- compound layer
- organic electroluminescence
- electroluminescence device
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 45
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims abstract description 69
- -1 aluminum 8-hydroxyquinoline Chemical compound 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 42
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 62
- 238000005401 electroluminescence Methods 0.000 claims description 54
- 239000004411 aluminium Substances 0.000 claims description 20
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 abstract 2
- 239000002202 Polyethylene glycol Substances 0.000 abstract 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical group [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 abstract 1
- 229920001223 polyethylene glycol Polymers 0.000 abstract 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 174
- 239000002346 layers by function Substances 0.000 description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000035882 stress Effects 0.000 description 6
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 6
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000027756 respiratory electron transport chain Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 2
- LVDRREOUMKACNJ-BKMJKUGQSA-N N-[(2R,3S)-2-(4-chlorophenyl)-1-(1,4-dimethyl-2-oxoquinolin-7-yl)-6-oxopiperidin-3-yl]-2-methylpropane-1-sulfonamide Chemical compound CC(C)CS(=O)(=O)N[C@H]1CCC(=O)N([C@@H]1c1ccc(Cl)cc1)c1ccc2c(C)cc(=O)n(C)c2c1 LVDRREOUMKACNJ-BKMJKUGQSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic electroluminescent device comprising a conductive substrate with an anode pattern, a luminescent layer, a cathode, an intermediate layer, a silicon-oxygen compound layer and a nitrogen-silicon compound layer, which are overlapped sequentially, wherein the material of the intermediate layer is copper phthalocyanine or aluminum 8-hydroxyquinoline; the organic electroluminescent device further comprises a packaging cover which packages the luminescent layer, the cathode, the intermediate layer, the silicon-oxygen compound layer and the nitrogen-silicon compound layer on the conductive substrate; and the material of the packaging cover is an aluminum polyethylene glycol terephthalate film. The organic electroluminescent device disclosed by the invention has a longer service life. The invention further provides a preparation method of the organic electroluminescent device.
Description
[technical field]
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
[background technology]
Organic electroluminescence device (OLED) is based on a kind of current mode light emitting semiconductor device of organic material.Its typical structure is that the luminous organic material of on ito glass, making one deck tens nanometer thickness is made luminescent layer, and there is the metal electrode of one deck low work function the luminescent layer top.When being added with voltage on the electrode, luminescent layer just produces light radiation.
After organic electroluminescence device receives moisture and moisture erosion, can cause that the material of organic electroluminescence device inner member takes place aging and then inefficacy, thereby the life-span of this organic electroluminescence device is shorter.
[summary of the invention]
Based on this, be necessary to provide a kind of life-span long organic electroluminescence device and method for packing thereof.
A kind of organic electroluminescence device; Comprise the conductive substrates that anode pattern is arranged, luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and the nitrogen silicon compound layer that stack gradually; The material in this intermediate layer is titanium cyanines copper or oxine aluminium; This organic electroluminescence device also comprises cap, and this cap is packaged in this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer on this conductive substrates, and the material of this cap is the PETG film of aluminium.
In a preferred embodiment, this cap is formed with the resettlement section, and this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer all are contained in this resettlement section.
In a preferred embodiment, this conductive substrates is formed with the resettlement section, and this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer all are contained in this resettlement section.
In a preferred embodiment, the material of this silicon oxide layer is SiO or SiO
2
In a preferred embodiment, the material of this nitrogen silicon compound layer is SiN or Si
3N
4
In a preferred embodiment, the edge of this cap is tightly connected through packaging plastic and this electrically-conductive backing plate.
A kind of preparation method of organic electroluminescence device may further comprise the steps: step 1, a conductive substrates is provided; Step 2, on this conductive substrates, form luminescent layer; Step 3, on this luminescent layer, form negative electrode; Step 4, on this negative electrode the vapor deposition intermediate layer, the material in this intermediate layer is titanium cyanines copper or oxine aluminium; Step 5, on this intermediate layer, form the silicon oxide compound layer; Step 6, on this silicon oxide compound layer, form the nitrogen silicon compound layer; Reach step 7, on this nitrogen silicon compound layer, form cap, this cap is packaged in this luminescent layer, negative electrode, silicon oxide compound layer and nitrogen silicon compound layer on this conductive substrates, and the material of this cap is the PETG film of aluminium.
In a preferred embodiment, through the coating packaging plastic this cap and this conductive substrates are tightly connected.
In a preferred embodiment, this cap is formed with the resettlement section, and this luminescent layer, negative electrode, silicon oxide compound layer and nitrogen silicon compound layer are contained in this resettlement section.
In a preferred embodiment, repeat this step 5 and this step 6 repeatedly to form a plurality of silicon oxide compound layers and the nitrogen silicon compound layer that is provided with at interval.
Above-mentioned organic electroluminescence device and manufacturing approach thereof, the nitrogen silicon compound layer of formation has the high resistant water-based, can improve the water resistance of organic electroluminescence device, thereby effectively reduces the erosion to luminescent layer and negative electrode of external water, oxygen isoreactivity material; The relative nitrogen silicon compound layer of the silicon oxide compound layer water preventing ability water preventing ability that forms is poor, but internal stress is little, non-friable, therefore combines silicon oxide compound layer and nitrogen silicon compound layer can effectively reduce stress; Cap adopts the PETG film of aluminium can effectively improve waterproof oxygen ability, and the intermediate layer of being processed by titanium cyanines copper or oxine aluminium is equivalent to provide a resilient coating, has prolonged the life-span of organic electroluminescence device greatly.
[description of drawings]
Through the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is the structural representation of the organic electroluminescence device of an embodiment;
Fig. 2 is preparation method's the flow chart of the organic electroluminescent of an embodiment;
Fig. 3 is the life curve figure of embodiment one and embodiment two preparation organic electroluminescence devices.
[embodiment]
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.A lot of details have been set forth in the following description so that make much of the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed practical implementation.
See also Fig. 1, an embodiment organic electroluminescence device 100 comprises the conductive substrates that anode pattern is arranged 10, functional layer 20, negative electrode 30, intermediate layer 40, silicon oxide layer 50, nitrogen silicon compound layer 60 and the cap 70 that stacks gradually.
Silicon oxide compound layer 50 is formed at the surface in intermediate layer 40.The material of silicon oxide compound layer 50 is SiO or SiO
2The thickness of silicon oxide compound layer 50 is 100nm～150nm.
Nitrogen silicon compound layer 60 is formed at silicon oxide compound layer 50 surface.The material of nitrogen silicon compound layer 60 is SiN or Si
3N
4The thickness of nitrogen silicon compound layer 60 is 100nm～150nm.
Nitrogen silicon compound layer 60 has the high resistant water-based in the above-mentioned organic electroluminescence device 100, can improve the water resistance of organic electroluminescence device 100, thereby effectively reduces the erosion to functional layer 20, negative electrode 30 of external water, oxygen isoreactivity material; Relative nitrogen silicon compound 60 water preventing abilities of silicon oxide compound 50 water preventing abilities are poor, but internal stress is little, non-friable, therefore combine silicon oxide compound layer 50 and nitrogen silicon compound layer 60 can effectively reduce stress; Cap 70 adopts the PETG film of aluminium can effectively improve waterproof oxygen ability; Intermediate layer 40 by CuPc or Alq3 process adopts vapor deposition to make; Rete compactness is high, is equivalent to provide a resilient coating, has prolonged the life-span of organic electroluminescence device 100 greatly.
Be appreciated that a plurality of alternately the silicon oxide compound layer 50 and the nitrogen silicon compound layers 60 of stack can also be set in organic electroluminescence device 100,, further increase the life-span of organic electroluminescent device 100 to reach good packaging effect.The resettlement section 72 of cap 70 can be omitted, and directly makes this moment cap 70 coat functional layer 20, negative electrode 30, intermediate layer 40, silicon oxide layer 50 and nitrogen silicon compound layer 60 or on conductive substrates 10, the resettlement section is set and gets final product.
Please consult Fig. 2 simultaneously, the preparation method of the organic electroluminescence device 100 of an embodiment, it may further comprise the steps:
Step S110, a conductive substrates 10 is provided, preparation has anode pattern on the conductive substrates 10.Conductive substrates 10 can be glass conductive substrates or organic PETG (PET) film substrate that conducts electricity.Conductive substrates 10 adopts liquid detergent, ethanol, acetone and pure water to clean to remove the organic pollution on substrate 10 surfaces; Carry out surface activation process after the oven dry,, improve the work function of conductive layer surface to increase the oxygen content of conductive surface layer.The conductive layer thickness of conductive substrates 10 is 100nm～150nm.
Step S120, on conductive substrates 10, form functional layer 20.Functional layer 20 comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, the electron injecting layer that stacks gradually.Functional layer 20 can adopt the method preparation of vapor deposition or coating.
Step S130, at functional layer 20 surperficial vapor deposition negative electrodes 30.The material of negative electrode 30 is selected from a kind of in aluminium, silver and the gold.
Step S140, form intermediate layers 40 on negative electrode 30 surface.The material in intermediate layer 40 is titanium cyanines copper (CuPc) or oxine aluminium (Alq3).Intermediate layer 40 is formed by vacuum evaporation, and vacuum degree is 3 * 10
-5Pa～5 * 10
-5Pa, evaporation rate does
The thickness in intermediate layer 40 is 100nm～150nm.
Step S150,40 surfaces form silicon oxide compound layers 50 in the intermediate layer.The material of silicon oxide compound layer 50 is SiO or SiO
2Silicon oxide compound layer 50 can adopt the method preparation of vacuum evaporation, magnetron sputtering or PCVD (PECVD).The thickness of silicon oxide compound layer 50 is 100nm～150nm.
Step S160, form nitrogen silicon compound layers 60 on silicon oxide compound layer 50 surface.The material of nitrogen silicon compound layer 60 is SiN or Si
3N
4Nitrogen silicon compound layer 60 can adopt the method preparation of magnetron sputtering or PECVD.The thickness of nitrogen silicon compound layer 60 is 100nm～150nm.
Step S170, form caps 70 on nitrogen silicon compound layer 60 surface.The material of cap 70 is the PETG film of aluminium.Cap 70 covering function layers 20, negative electrode 30, intermediate layer 40, silicon oxide layer 50 and nitrogen silicon compound layer 60, and the edge of cap 70 supports conductive substrates 10.
Step S180, the coating packaging plastic is tightly connected cap 70 and conductive substrates 10 at the edge of cap 70, and cap 70 is encapsulated in functional layer 20, negative electrode 30, intermediate layer 40, silicon oxide layer 50 and nitrogen silicon compound layer 60 on the conductive substrates 10.Packaging plastic can be ultraviolet curing glue.
The preparation method of above-mentioned organic electroluminescence device; Preparation technology is simple; The nitrogen silicon compound layer 60 that forms has the high resistant water-based, can improve the water resistance of organic electroluminescence device 100, thereby effectively reduces the erosion to functional layer 20, negative electrode 30 of external water, oxygen isoreactivity material; Relative nitrogen silicon compound 60 water preventing abilities of silicon oxide compound 50 water preventing abilities are poor, but internal stress is little, non-friable, therefore combine silicon oxide compound layer 50 and nitrogen silicon compound layer 60 can effectively reduce stress; Cap 70 adopts the PETG film of aluminium can effectively improve waterproof oxygen ability; Intermediate layer 40 by CuPc or Alq3 process adopts vapor deposition to make; Rete compactness is high, is equivalent to provide a resilient coating, has prolonged the life-span of organic electroluminescence device 100 greatly.
Be appreciated that in order further to optimize packaging effect, thus can repeating step S150 and step S160 at least twice form a plurality of alternately the silicon oxide compound layer 50 and the nitrogen silicon compound layers 60 of stack.
Below in conjunction with specific embodiment organic electroluminescent preparation method provided by the invention is elaborated.
Embodiment one
A kind of preparation method of organic electroluminescence device may further comprise the steps:
Step S210, a conductive substrates is provided.Preparation has anode pattern on the conductive substrates.Conductive substrates adopts liquid detergent, ethanol, acetone and pure water to clean to remove the organic pollution of substrate surface; Carry out surface activation process after the oven dry,, improve the work function of conductive layer surface to increase the oxygen content of conductive surface layer.The conductive layer thickness of conductive substrates is 100.
Step S220, on conductive substrates, form functional layer.Functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, the electron injecting layer that stacks gradually.Functional layer can be according to the method preparation with vapor deposition or coating of the different mining of layers of material.
Step S230, on functional layer surface the vapor deposition negative electrode.The material of negative electrode is an aluminium.
Step S240, in cathode surface vapor deposition intermediate layer.The material in intermediate layer is a titanium cyanines copper (CuPc), and the vacuum degree during vapor deposition is 3 * 10
-5Pa, evaporation rate does
The thickness in intermediate layer is 100nm.
Step S250, form the silicon oxide compound layer in interlayer surfaces.The material of silicon oxide compound layer is SiO.The silicon oxide compound layer adopts the method preparation of vacuum evaporation, and vacuum degree is 5 * 10
-5Pa, evaporation rate does
The thickness of silicon oxide compound layer is 100nm.
Step S260, form the nitrogen silicon compound layer at the silicon oxide compound laminar surface.The material of nitrogen silicon compound layer is Si
3N
4The nitrogen silicon compound layer can adopt the method preparation of sputter, base vacuum degree 2 * 10
-3Pa, the thickness of nitrogen silicon compound layer are 100nm.
Step S270, form the second silicon oxide compound layer at nitrogen silicon compound laminar surface.The material of the second silicon oxide compound layer is SiO.The second silicon oxide compound layer adopts the method preparation of vacuum evaporation, and vacuum degree is 5 * 10
-5Pa, evaporation rate does
The thickness of the second silicon oxide compound layer is 100nm.
Step S280, the second silicon oxide compound laminar surface form the second nitrogen silicon compound layer.The material of the second nitrogen silicon compound layer is Si
3N
4The second nitrogen silicon compound layer can adopt the method preparation of sputter, base vacuum degree 2 * 10
-3Pa, the thickness of the second nitrogen silicon compound layer are 100nm.
Step S290, form the 3rd silicon oxide compound layer at the second nitrogen silicon compound laminar surface.The material of the 3rd silicon oxide compound layer is SiO.The 3rd silicon oxide compound layer adopts the method preparation of vacuum evaporation, and vacuum degree is 5 * 10
-5Pa, evaporation rate does
The thickness of the 3rd silicon oxide compound layer is 100nm.
Step S300, the 3rd silicon oxide compound laminar surface form the 3rd nitrogen silicon compound layer.The material of the 3rd nitrogen silicon compound layer is Si
3N
4The 3rd nitrogen silicon compound layer can adopt the method preparation of sputter, base vacuum degree 2 * 10
-3Pa, the thickness of the 3rd nitrogen silicon compound layer are 100nm.
Step S310, form cap at the 3rd nitrogen silicon compound laminar surface.The material of cap is the PETG film of aluminium.Cap covering function layer and luminescent layer, negative electrode, intermediate layer, silicon oxide layer and nitrogen silicon compound layer, and the edge of cap supports conductive substrates.
Step S320, at the edge of cap the coating ultraviolet curing glue; And cap and conductive substrates are tightly connected by the mode drying of ultraviolet curing; Cap is packaged in functional layer, negative electrode, intermediate layer, silicon oxide layer and nitrogen silicon compound layer on the conductive substrates, thereby obtains required organic electroluminescence device.
Embodiment two
The organic electroluminescence device preparation method that embodiment two provides is identical substantially with the preparation method of the organic electroluminescence device that embodiment one provides; Its difference is: omit step S240 among the organic electroluminescence device preparation method that embodiment two provides, promptly the organic electroluminescence device of preparation does not have the intermediate layer among the embodiment two.
See also Fig. 3, be depicted as the life curve (curve 1) of the organic electroluminescence device of preparation among the embodiment one and the life curve (curve 2) of embodiment two organic electroluminescence devices.
As can beappreciated from fig. 3, the organic electroluminescence device brightness in use for some time of embodiment one preparation is higher than the organic electroluminescence that does not contain the intermediate layer of implementing preparation in two device of giving out light, and the life-span of the organic electroluminescence device of embodiment one preparation is longer.
Embodiment three
The preparation method of the organic electroluminescence device that the organic electroluminescence device preparation method that embodiment three provides and embodiment one provide is identical substantially, and its difference is: among the organic electroluminescence device preparation method that embodiment three provides among the step S210 conductive layer thickness be 150nm; Intermediate layer material adopts Alq3, thickness 150nm among the step S240; Silicon oxide compound is SiO among the step S250
2, adopt magnetron sputtering to make base vacuum degree 2 * 10
-3Pa, thickness are 150nm; The material of nitrogen silicon compound layer is SiN among the step S300, adopts the method preparation of sputter, base vacuum degree 2 * 10
-3Pa, thickness are 150nm.
Embodiment four
The preparation method of the organic electroluminescence device that the organic electroluminescence device preparation method that embodiment three provides and embodiment one provide is identical substantially, and its difference is: among the organic electroluminescence device preparation method that embodiment four provides among the step S210 conductive layer thickness be 130nm; Intermediate layer material adopts Alq3, thickness 120nm among the step S240; Silicon oxide compound is SiO among the step S250
2, adopt magnetron sputtering to make base vacuum degree 2 * 10
-3Pa, thickness are 120nm; The material of nitrogen silicon compound layer is SiN among the step S300, adopts the method preparation of sputter, base vacuum degree 2 * 10
-3Pa, thickness are 120nm.
The above embodiment has only expressed several kinds of execution modes of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. organic electroluminescence device; Comprise the conductive substrates that anode pattern is arranged, luminescent layer and the negative electrode that stack gradually; It is characterized in that: this organic electroluminescence device also comprises intermediate layer, silicon oxide compound layer and the nitrogen silicon compound layer that stacks gradually on this negative electrode; The material in this intermediate layer is titanium cyanines copper or oxine aluminium; This organic electroluminescence device also comprises cap, and this cap is packaged in this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer on this conductive substrates, and the material of this cap is the PETG film of aluminium.
2. organic electroluminescence device according to claim 1 is characterized in that: this cap is formed with the resettlement section, and this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer all are contained in this resettlement section.
3. organic electroluminescence device according to claim 1 is characterized in that: this conductive substrates is formed with the resettlement section, and this luminescent layer, negative electrode, intermediate layer, silicon oxide compound layer and nitrogen silicon compound layer all are contained in this resettlement section.
4. organic electroluminescence device according to claim 1 is characterized in that: the material of this silicon oxide layer is SiO or SiO
2
5. organic electroluminescence device according to claim 1 is characterized in that: the material of this nitrogen silicon compound layer is SiN or Si
3N
4
6. organic electroluminescence device according to claim 1 is characterized in that: the edge of this cap is tightly connected through packaging plastic and this electrically-conductive backing plate.
7. the preparation method of an organic electroluminescence device may further comprise the steps:
Step 1, a conductive substrates is provided;
Step 2, on this conductive substrates, form luminescent layer;
Step 3, on this luminescent layer, form negative electrode;
Step 4, on this negative electrode the vapor deposition intermediate layer, the material in this intermediate layer is titanium cyanines copper or oxine aluminium;
Step 5, on this intermediate layer, form the silicon oxide compound layer;
Step 6, on this silicon oxide compound layer, form the nitrogen silicon compound layer; And
Step 7, on this nitrogen silicon compound layer, form cap, this cap is packaged in this luminescent layer, negative electrode, silicon oxide compound layer and nitrogen silicon compound layer on this conductive substrates, and the material of this cap is the PETG film of aluminium.
8. the preparation method of organic electroluminescence device according to claim 7 is characterized in that: through the coating packaging plastic this cap and this conductive substrates are tightly connected.
9. the preparation method of organic electroluminescence device according to claim 7, it is characterized in that: this cap is formed with the resettlement section, and this luminescent layer, negative electrode, silicon oxide compound layer and nitrogen silicon compound layer are contained in this resettlement section.
10. the preparation method of organic electroluminescence device according to claim 7 is characterized in that: repeat this step 5 and this step 6 repeatedly to form a plurality of silicon oxide compound layers and the nitrogen silicon compound layer that is provided with at interval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101679355A CN102842681A (en) | 2011-06-21 | 2011-06-21 | Organic electroluminescent device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101679355A CN102842681A (en) | 2011-06-21 | 2011-06-21 | Organic electroluminescent device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102842681A true CN102842681A (en) | 2012-12-26 |
Family
ID=47369879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101679355A Pending CN102842681A (en) | 2011-06-21 | 2011-06-21 | Organic electroluminescent device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102842681A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887449A (en) * | 2013-12-16 | 2014-06-25 | 友达光电股份有限公司 | Organic light emitting device and method of fabricating the same |
| CN104938025A (en) * | 2013-03-08 | 2015-09-23 | 富士胶片株式会社 | Organic EL laminate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333927A (en) * | 1998-12-17 | 2002-01-30 | 剑桥显示技术有限公司 | Organic light-emitting devices |
| CN1452437A (en) * | 2002-04-17 | 2003-10-29 | 朱星厚 | Method for mfg. organic electroluminescent display panel covered with protective film |
| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
| CN101582489A (en) * | 2009-05-26 | 2009-11-18 | 上海大学 | Compound encapsulation structure and method of organic electroluminescence device |
| US20110140164A1 (en) * | 2009-12-14 | 2011-06-16 | Samsung Mobile Display Co., Ltd. | Organic light emitting apparatus and method of manufacturing organic light emitting apparatus |
-
2011
- 2011-06-21 CN CN2011101679355A patent/CN102842681A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333927A (en) * | 1998-12-17 | 2002-01-30 | 剑桥显示技术有限公司 | Organic light-emitting devices |
| CN1452437A (en) * | 2002-04-17 | 2003-10-29 | 朱星厚 | Method for mfg. organic electroluminescent display panel covered with protective film |
| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
| CN101582489A (en) * | 2009-05-26 | 2009-11-18 | 上海大学 | Compound encapsulation structure and method of organic electroluminescence device |
| US20110140164A1 (en) * | 2009-12-14 | 2011-06-16 | Samsung Mobile Display Co., Ltd. | Organic light emitting apparatus and method of manufacturing organic light emitting apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104938025A (en) * | 2013-03-08 | 2015-09-23 | 富士胶片株式会社 | Organic EL laminate |
| CN103887449A (en) * | 2013-12-16 | 2014-06-25 | 友达光电股份有限公司 | Organic light emitting device and method of fabricating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6836070B2 (en) | Organic electro-luminescent display and method of sealing the same | |
| EP2141962A1 (en) | Surface light emitting body | |
| TW200913344A (en) | Method for applying a thin-film encapsulation layer assembly to an organic device, and an organic device provided with a thin-film encapsulation layer assembly preferably applied with such a method | |
| CN1879238A (en) | Electronic device comprising a protective barrier layer stack | |
| CN103718324B (en) | Packaging structure for optoelectronic device and method for packaging optoelectronic device | |
| CN105576145A (en) | Quantum dot light emitting diode (QLED), display and preparation method | |
| CN206293441U (en) | Organic EL display panel and display device | |
| US9105874B2 (en) | Light-emitting components and method for producing a light-emitting component | |
| US20060202614A1 (en) | Organic electroluminescent devices and display device employing the same | |
| CN101222026A (en) | Organic light emitting diode display device and manufacturing method thereof | |
| CN102842683A (en) | Organic electroluminescence device and manufacturing method thereof | |
| CN102842681A (en) | Organic electroluminescent device and preparation method thereof | |
| CN102751442A (en) | Organic electroluminescence device and manufacture method of organic electroluminescence device | |
| CN103137882A (en) | Organic electroluminescent device and production method thereof | |
| CN1674745A (en) | Organic electroluminescence element and display device including same | |
| CN103594649A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103427038A (en) | Organic electroluminescence device and method for manufacturing same | |
| CN103427035A (en) | Organic electroluminescence device and method for manufacturing same | |
| CN110854285A (en) | An AC power driven excimer OLED emitter | |
| CN104103764A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN103594646A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104103768A (en) | Organic light-emitting display and manufacturing method thereof | |
| CN103594647A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104425754A (en) | Organic light-emitting device and preparation method for same | |
| CN103594650A (en) | Organic electroluminescent device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121226 |