CN102842644A - Preparation method of silicon-based thin film solar battery - Google Patents
Preparation method of silicon-based thin film solar battery Download PDFInfo
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Abstract
The invention discloses a preparation method of a silicon-based thin film solar battery, comprising the following steps of: utilizing a picosecond laser beam to etch a first groove in a light-transmitting conductive oxide layer, wherein the conductive oxide layer and a substrate are overlapped; plating a semiconductor photoelectric conversion layer on each one of the conductive oxide layer etched with the first groove and the surface opposite to the substrate; etching the semiconductor photoelectric conversion layer to form a second groove; plating a back electrode layer on each one of the semiconductor photoelectric conversion layer etched with the second groove and the surface opposite to the conductive oxide layer; and etching the semiconductor photoelectric conversion layer and an upper back electrode layer to form third grooves. According to the preparation method of the silicon-based thin film solar battery, the etched grooves are smooth and uniform; the etching speed is high and the quality is high; the method improves the production efficiency and reduces the production cost; and the method has a simple procedure and is suitable for industrial production.
Description
Technical field
The invention belongs to the technical field of thin-film solar in the new forms of energy, relate to a kind of silicon-based film solar cells preparation method specifically.
Background technology
Along with the expansion day by day in thin film solar market, silicon-based film solar cells has also occupied critical role in market.Usually, in the whole component package process of silicon-based film solar cells, need carry out the laser scoring technology more than three times altogether.It is reported that the effect of photoetching for the first time (P1) is with oxidic, transparent, conductive layers (TCO) merogenesis, with the substrate as sub-battery; The effect of photoetching for the second time (P2) is with a-Si rete etching groove, fills for back electrode and prepares; The effect of photoetching for the third time (P3) is the separation of accomplishing sub-battery, form the plurality of sub battery series connection, cut away silicon layer and back electrode; Also to carry out laser at last and play a minor role, sweep off finished product battery chip edge, make edge insulation reach edge-protected requirement, after be used for assembly workshop lamination.
Current ultrashort pulse laser is used to the high-precision configuration production and processing of a lot of materials, this be since the ultrashort laser technology neither thermal ablation, also non-" cold " processing characteristic of ablating.Processing for thin-film solar cells at present all also is based on nanosecond laser ablation and mechanical groove, and this conventional laser light source can't satisfy the requirement of ablation quality.
Summary of the invention
Technical problem to be solved by this invention is to overcome the defective of prior art, provides a kind of delineation quality high, can satisfy the demand of process velocity on the industry, and operation is simple, the silicon-based film solar cells preparation method that production cost is low.
In order to realize the foregoing invention purpose, technical scheme of the present invention is following:
A kind of silicon-based film solar cells preparation method comprises the steps:
Be provided at the substrate that the surface is coated with the printing opacity of light transmitting conductive oxide layer;
Apply the picosecond laser bundle, make said picosecond laser bundle pass said substrate and arrive said conductive oxide layer, and draw and carve said conductive oxide layer, run through first groove of said conductive oxide layer with formation;
Conductive oxide layer and said substrate facing surfaces plating semiconductor optoelectronic conversion coating that first groove is arranged in said delineation;
Apply the picosecond laser bundle, make said picosecond laser bundle pass said substrate and conductive oxide layer arrives said semiconductor optoelectronic conversion coating, and draw and carve said semiconductor optoelectronic conversion coating, run through second groove of said semiconductor optoelectronic conversion coating with formation;
Semiconductor optoelectronic conversion coating and said conductive oxide layer facing surfaces plating dorsum electrode layer that second groove is arranged in said delineation;
Apply the picosecond laser bundle; Make said picosecond laser bundle pass said substrate, conductive oxide layer and semiconductor optoelectronic conversion coating and arrive said dorsum electrode layer; And draw and carve said semiconductor optoelectronic conversion coating and dorsum electrode layer, run through the 3rd groove of said semiconductor optoelectronic conversion coating and dorsum electrode layer with formation;
Wherein, said picosecond laser bundle is launched by picosecond laser.
Silicon-based film solar cells preparation method of the present invention adopts the picosecond laser bundle that conductive oxide layer, semiconductor optoelectronic conversion coating and dorsum electrode layer are delineated, and the groove that makes delineation form is smooth, even, and delineation speed is fast, quality is high.Because; Picosecond laser system is functional; This picosecond laser light source repetition rate can satisfy the demand of process velocity on the industry, has improved the production efficiency of this silicon-based film solar cells, has reduced production cost; This silicon-based film solar cells preparation method operation is simple, is suitable for suitability for industrialized production.
Description of drawings
Fig. 1 is embodiment of the invention silicon-based film solar cells preparation method's a schematic flow sheet;
Fig. 2 is an embodiment of the invention silicon-based film solar cells structural representation;
Fig. 3 is the design sketch of first groove in the silicon-based film solar cells of embodiment 1 preparation;
Fig. 4 is the design sketch of first groove in the silicon-based film solar cells of comparative example's preparation, wherein,
Fig. 4 (a) has shown that common nanosecond laser emission 1064nm wavelength laser bundle draws the design sketch of carving conductive oxide layer; Fig. 4 (b) has shown that common nanosecond laser 355nm wavelength laser bundle draws the design sketch of carving conductive oxide layer.
Embodiment
Clearer for technical problem, technical scheme and beneficial effect that the present invention will be solved, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of delineation quality high, can satisfy the demand of process velocity on the industry, and operation is simple, the silicon-based film solar cells preparation method that production cost is low.This method process chart is as shown in Figure 1, simultaneously referring to Fig. 2.This method comprises the steps:
S1: be provided at the substrate 1 that the surface is coated with the printing opacity of light transmitting conductive oxide layer (tco layer) 2;
S2: apply the picosecond laser bundle, make this picosecond laser bundle pass substrate 1 and arrive conductive oxide layer 2, and draw and carve conductive oxide layer 2, run through first groove 51 of conductive oxide layer 2 with formation;
S3: conductive oxide layer 2 and substrate 1 facing surfaces plating semiconductor optoelectronic conversion coating 3 that first groove 51 is arranged in delineation;
S4: apply the picosecond laser bundle, make the picosecond laser bundle pass substrate 1 and arrive semiconductor optoelectronic conversion coating 3, and draw and carve semiconductor optoelectronic conversion coating 3, run through second groove 52 of semiconductor optoelectronic conversion coating 3 with formation with conductive oxide layer 2;
S5: semiconductor optoelectronic conversion coating 3 and conductive oxide layer 2 facing surfaces plating dorsum electrode layer 4 that second groove 52 is arranged in delineation;
S6: apply the picosecond laser bundle; Make the picosecond laser bundle pass substrate 1, conductive oxide layer 2 and semiconductor optoelectronic conversion coating 3 and arrive dorsum electrode layer 4; And draw and carve semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4, run through the 3rd groove 53 of semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4 with formation;
Wherein, the picosecond laser bundle among above-mentioned steps S2, step S4 and the step S6 is launched by picosecond laser.
Like this, above-mentioned silicon-based film solar cells preparation method adopts the picosecond laser bundle that conductive oxide layer, semiconductor optoelectronic conversion coating and dorsum electrode layer are delineated, and the groove that makes delineation form is smooth, even, and delineation speed is fast, quality is high.Because; Picosecond laser system is functional; This picosecond laser light source repetition rate can satisfy the demand of process velocity on the industry, has improved the production efficiency of this silicon-based film solar cells, has reduced production cost; This silicon-based film solar cells preparation method operation is simple, is suitable for suitability for industrialized production.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S1, substrate 1 should not have electric conductivity, like glass for present technique field material commonly used.Before plating conductive oxide layer 2, preferably this substrate 1 is carried out pre-process.This pre-process can comprise chemical reagent cleaning, ultrasonic waves for cleaning, water cleaning etc., and is after cleaning finishes, for use with the IR bake oven dry.This pre-process adsorptivity and its surperficial organic pollution of removal.
Among this step S1, the method for plating conductive oxide layer 2 preferably adopts the method for vacuum magnetic-control sputtering (Magnetron Sputtering).The process conditions of this vacuum magnetic-control sputtering can be according to present technique field process conditions commonly used.The thickness of this conductive oxide layer 2 is preferably 0.5 μ m～1 μ m, and its material is preferably at least a in Al-Doped ZnO (AZO), fluorine doped tin oxide (FTO), the tin indium oxide (ITO).Adopt vacuum magnetic-control sputtering plating conductive oxide layer 2 can make conductive oxide layer 2 and substrate 1 combine closely, and even structure.Preferable material has like excellent conducting performance such as low resistances.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S2, the concrete steps (P1) of delineating first groove are: the substrate that provides among the step S1 1 is fixed on the horizontal table, simultaneously picosecond laser is fixed on the horizontal table top; Wherein, light transmitting conductive oxide layer 2 down, substrate 1 is fixing up; Horizontal table should in the vertical direction and horizontal direction on the position keep substantially constant; The vertical interval of picosecond laser and substrate 1 is fixed, and this picosecond laser can be parallel to laterally or vertically moving back and forth of substrate 1; Open picosecond laser then, make the picosecond laser bundle of this picosecond laser emission pass substrate 1 and arrive on the tco layer 2, and draw quarter this tco layer 2 until substrate 1 promptly until passing this tco layer 2 to form first groove 51.
Among this step S2, in the delineation technology of above-mentioned P1, wavelength is that the repetition rate of 1064nm picosecond laser bundle is preferably 100KHz, and the power output of picosecond laser is preferably 0.8W, and pulse energy is preferably 8 μ J, and delineation speed is 800mm/s.Like this; Picosecond laser bundle under this preferred technological parameter is not only the material ablation that effectively makes tco layer 2, but gasification is most or the material of all tco layers that contact with laser beam 2, thereby makes that first groove 51 that depicts is smooth; And accurately delineation cutting; And reduce perhaps and remove undesired flange and the projection in first groove 51, in addition, improved this first groove, 51 delineation efficient.
Among this step S2, above-mentioned picosecond laser bundle preferably includes for drawing and carves effective live part and carve invalid invalid part for drawing.Wherein, the live part of this picosecond laser bundle has certain distance range, in the power density of the picosecond laser bundle of this distance range inner focusing greater than given effective value.Said effective value can be that power density provides a distance range, in the power density of the laser beam of this distance range inner focusing greater than given effective value.This effective value can be a power density, and this power density that is to say that for evaporation and/or excision the part of delineation conductive oxide layer 2 is effective.Is effective like effective part in conductive oxide layer 2, draw carving first groove 51.The invalid part of this picosecond laser bundle is meant the picosecond laser bundle outside the certain distance range of aforementioned live part.The picosecond laser bundle of this zone inner focusing has lower power density and is not enough to be used for draws the ditch groove in conductive oxide layer 2, like substrate 1 residing picosecond laser bundle scope, is not delineated with protection substrate 1.
Among this step S2, being opened on the conductive oxide layer 2 of first groove, 51 preferred interval, and the spacing between the first adjacent in twos groove 51 is preferably 2mm～10mm.The width of this first groove 51 is preferably 25 μ m～50 μ m.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S3, the method for plating semiconductor optoelectronic conversion coating 3 preferably adopts the method for ion enhancing chemical vapour deposition (CVD) (PECVD), and the outer surface of semiconductor optoelectronic conversion coating 3 should be smooth.Adopt PECVD method plating semiconductor optoelectronic conversion coating 3 can make semiconductor optoelectronic conversion coating 3 and conductive oxide layer 2 combine closely, and even structure.The process conditions of this PECVD method can be according to present technique field process conditions commonly used.The thickness of this semiconductor optoelectronic conversion coating 3 is preferably 1～2 μ m, and its material is preferably a-Si.This semiconductor optoelectronic conversion coating 3 can be that one deck also can be the sandwich construction that stack is provided with, and wherein, semiconductor optoelectronic conversion coating 3 is preferably 2 or the 3-tier architecture that stack is provided with.The semiconductor optoelectronic conversion coating 3 of this preferred material and structure can effectively reduce ray refraction, strengthens the transmitance of light, improves the conversion efficiency to light.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S4, the concrete steps (P2) of delineating second groove are basic identical with the P1 among the above-mentioned steps S2.Difference is; Open picosecond laser; Make the picosecond laser bundle of this picosecond laser emission pass substrate 1 and arrive on the semiconductor optoelectronic conversion coatings 3 with conductive oxide layer 2, and draw quarter this semiconductor optoelectronic conversion coating 3 until conductive oxide layer 2 promptly until passing this semiconductor optoelectronic conversion coating 3 to form second groove 52.This second groove 52 and first groove 51 closely and are accurately offered mutually at interval, and all are to extend to relative another side from a side of silicon-based film solar cells.
Among this step S4, in the delineation technology of above-mentioned P2, wavelength is that the repetition rate of 532nm picosecond laser bundle is preferably 100KHz, and the power output of picosecond laser is preferably 0.2W, and pulse energy is preferably 2 μ J, and delineation speed is 900mm/s.Like this; Picosecond laser bundle under this preferred technological parameter is not only the material ablation that effectively makes semiconductor optoelectronic conversion coating 3, but gasification is most or the material of all semiconductor optoelectronic conversion coatings 3 that contact with laser beam, thereby makes that second groove 52 that depicts is smooth; And accurately delineation cutting; And reduce perhaps and remove undesired flange and the projection in second groove 52, in addition, improved this second groove, 52 delineation efficient.
Among this step S4, above-mentioned picosecond laser bundle preferably includes for drawing and carves effective live part and carve invalid invalid part for drawing.Wherein, the live part of this picosecond laser bundle is effectively in semiconductor optoelectronic conversion coating 3, draw carving second groove 52, and in like manner, substrate 1 and conductive oxide layer 2 are in the invalid part scope of this picosecond laser bundle.
Among this step S4, being opened on the semiconductor optoelectronic conversion coating 3 of second groove, 52 preferred interval, and the spacing between the second adjacent in twos groove 52 is preferably 2mm～10mm.The width of this second groove 52 is preferably 25 μ m～50 μ m.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S5, the method for plating dorsum electrode layer 4 preferably adopts the method for vacuum magnetic-control sputtering (Magnetron Sputtering), and the outer surface of dorsum electrode layer 4 should be smooth.Adopt vacuum magnetic-control sputtering method plating dorsum electrode layer 4 can make dorsum electrode layer 4 and semiconductor optoelectronic conversion coating 3 combine closely, and even structure.The process conditions of this vacuum magnetic-control sputtering method can be according to present technique field process conditions commonly used.The thickness of this dorsum electrode layer 4 is preferably 0.5～1 μ m, and its material can be a present technique field material commonly used.In addition, can this dorsum electrode layer 4 be made as and increase instead, can make light from these dorsum electrode layer 4 bottom side reflected back semiconductor optoelectronic conversion coatings 3, to improve electricity conversion.
Particularly, among above-mentioned silicon-based film solar cells preparation method's the step S6, the concrete steps (P3) of delineating the 3rd groove are basic identical with the P2 among the above-mentioned steps S4.Difference is; Open picosecond laser; Make the picosecond laser bundle of this picosecond laser emission pass substrate 1, conductive oxide layer 2 and semiconductor optoelectronic conversion coating 3 and arrive on the dorsum electrode layers 4, and draw carve this semiconductor optoelectronic conversion coating 3 with dorsum electrode layer 4 until conductive oxide layer 2 promptly until passing this semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4 to form the 3rd groove 53.The 3rd groove 53 and second groove 52, first groove 51 and all are to extend to relative another side from a side of silicon-based film solar cells mutually closely and offer at interval accurately.The 3rd groove 53 is identical with the bearing of trend of second groove 52, first groove 51, can form a plurality of series connection or silicon-based film solar cells spaced apart at substrate 1.
Among this step S6, in the delineation technology of above-mentioned P3, wavelength is that the repetition rate of 532nm picosecond laser bundle is preferably 100KHz, and the power output of picosecond laser is preferably 0.4W, and pulse energy is preferably 4 μ J, and delineation speed is 900mm/s.Equally; Picosecond laser bundle under this preferred technological parameter is not only the material of semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4 is melted, but gasification is most or the material of all semiconductor optoelectronic conversion coatings that contact with laser beam 3 and dorsum electrode layer 4, thereby makes that the 3rd groove 53 that depicts is smooth; And accurately delineation cutting; And reduce perhaps and remove undesired flange and the projection in the 3rd groove 53, in addition, improved the 3rd groove 53 delineation efficient.
Among this step S6, above-mentioned picosecond laser bundle preferably includes for drawing and carves effective live part and carve invalid invalid part for drawing.Wherein, to carve the 3rd groove 53 be effectively to the live part of this picosecond laser bundle in semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4, drawing, and in like manner, substrate 1 and conductive oxide layer 2 are in the invalid part scope of this picosecond laser bundle.
Among this step S6, the 3rd groove 53 preferred interval are offered, and the spacing between the 3rd adjacent in twos groove 53 is preferably 2mm～10mm.The width of the 3rd groove 53 is preferably 25 μ m～50 μ m.
The pulse duration of the picosecond laser bundle among above-mentioned steps S2, step S4, the step S6 is adjustable at 10ps～15ps, and repetition rate is adjustable at 100～500KHz.
Preferably; As shown in Figure 2; As the present invention's one specific embodiment, comprise that through the silicon-based film solar cells of above-mentioned silicon-based film solar cells preparation method preparation substrate 1, conductive oxide layer 2 and the semiconductor optoelectronic conversion coating 3 of stack setting successively arrives dorsum electrode layers 4.Wherein, conductive oxide layer 2 offers two first grooves 51; Semiconductor optoelectronic conversion coating 3 offers two second grooves 52; Offer two the 3rd grooves, 53, the three grooves 53 on semiconductor optoelectronic conversion coating 3 and the dorsum electrode layer 4 and pass semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4, semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4 are divided into discontinuous three parts side by side.This first groove 51, second groove 52 and the 3rd groove 53 closely and are accurately offered mutually at interval; And all be to extend to relative another side from a side of silicon-based film solar cells; In order to improve the utilance of silicon-based film solar cells, the overall width of these three grooves preferably is no more than 250 μ m.Wherein, Spacing between spacing between spacing between two first grooves 51, two second grooves 52 and two the 3rd grooves 53 is 10mm; The width of first groove 51, second groove 52 and the 3rd groove 53 is 25 μ m, and the three is in staggered distribution mutually.For simplicity, only show three independently batteries among Fig. 2, but for the battery that is connected in series of any desirable number, processing method is similar, simultaneously, and as required, each battery can be connected in parallel or not connect existence.
Combine instantiation, the preparation method is further elaborated to embodiment of the invention silicon-based film solar cells at present.
The silicon-based film solar cells structure of present embodiment is as shown in Figure 2, and this silicon-based film solar cells preparation method is:
S11: be provided at the substrate 1 that the surface is coated with the printing opacity of light transmitting conductive oxide layer (tco layer) 2;
S12: the substrate that provides among the step S11 1 is fixed on the horizontal table, simultaneously picosecond laser is fixed on the horizontal table top; Wherein, light transmitting conductive oxide layer 2 down, substrate 1 is fixing up; Horizontal table should in the vertical direction and horizontal direction on the position keep substantially constant; The vertical interval of picosecond laser and substrate 1 is fixed, and this picosecond laser can be parallel to laterally or vertically moving back and forth of substrate 1; Open picosecond laser then; Make the picosecond laser bundle of this picosecond laser emission pass on the substrate 1 arrival tco layer 2; And draw and carve this tco layer 2 until running through this tco layer 2, being spaced apart two first grooves 51 side by side of 10mm with formation, these two first groove 51 width are 25 μ m; Wherein, the wavelength of picosecond laser bundle is 1064nm, and its pulse is that 10ps, repetition rate are that 100KHz, power output are about 0.8W, pulse energy is about 8 μ J;
S13: adopt the PECVD method, it is the semiconductor optoelectronic conversion coating 3 of 2 μ m that the conductive oxide layer 2 of first groove 51 and substrate 1 facing surfaces plating thickness are arranged in delineation;
S14: according to the method for above-mentioned steps S12; Apply the picosecond laser bundle; Make the picosecond laser bundle pass substrate 1 and arrive semiconductor optoelectronic conversion coating 3 with conductive oxide layer 2; And draw to carve semiconductor optoelectronic conversion coating 3, run through two second grooves 52 side by side that are spaced apart 10mm of semiconductor optoelectronic conversion coating 3 with formation, these two second groove 52 width are 25 μ m; Wherein, the wavelength of picosecond laser bundle is 532nm, and its pulse is that 10ps, repetition rate are about that 100KHz, power output are about 0.2W, pulse energy is about 2 μ J;
S15: adopt vacuum magnetic-control sputtering method method, it is the dorsum electrode layer 4 of 1 μ m that the semiconductor optoelectronic conversion coating 3 of second groove 52 and conductive oxide layer 2 facing surfaces plating thickness are arranged in delineation;
S16: according to the method for above-mentioned steps S12; Apply the picosecond laser bundle; Make the picosecond laser bundle pass substrate 1, conductive oxide layer 2 and semiconductor optoelectronic conversion coating 3 and arrive dorsum electrode layer 4; And draw to carve semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4, run through two the 3rd grooves 53 side by side that are spaced apart 10mm of semiconductor optoelectronic conversion coating 3 and dorsum electrode layer 4 with formation, these two the 3rd groove 53 width are 25 μ m; Wherein, the wavelength of picosecond laser bundle is 532nm, and its pulse is that 10ps, repetition rate are about that 100KHz, power output are about 0.4W, pulse energy is about 4 μ J.
In the silicon-based film solar cells structure of present embodiment 1 preparation; First groove 51, second groove 52 and the 3rd groove 53 of delineation are smooth, even, and quality is high, and delineation thoroughly; Can not cause making the inner generation parallel connection of this silicon-based film solar cells, as shown in Figure 3.
The comparative example 1
The silicon-based film solar cells structure of present embodiment is as shown in Figure 2, and this silicon-based film solar cells preparation method is:
S21: be provided at the substrate 1 that the surface is coated with the printing opacity of light transmitting conductive oxide layer (tco layer) 2;
S22: according to the method for above-mentioned steps S12; Open existing common nanosecond laser then; Make this nanosecond laser emitted laser bundle pass substrate 1 and arrive on the tco layer 2, and draw and carve this tco layer 2, be spaced apart two first grooves 51 side by side of 10mm with formation until running through this tco layer 2; Promptly carry out the delineation operation of P1, these two first groove 51 width are 25 μ m; Wherein, the wavelength of laser beam is 1064nm;
S23: adopt the PECVD method, it is the semiconductor optoelectronic conversion coating 3 of 2 μ m that the conductive oxide layer 2 of first groove 51 and substrate 1 facing surfaces plating thickness are arranged in delineation;
S24: according to the method for above-mentioned steps S22, apply the laser beam of existing common nanosecond laser, carry out the delineation operation of P2;
S25: adopt vacuum magnetic-control sputtering method method, it is the dorsum electrode layer 4 of 1 μ m that the semiconductor optoelectronic conversion coating 3 of second groove 52 and conductive oxide layer 2 facing surfaces plating thickness are arranged in delineation;
S26: with reference to the method for above-mentioned steps S22, apply the laser beam of existing common nano laser, carry out the delineation operation of P3.
In the silicon-based film solar cells structure of this comparative example 1 preparation, first groove 51 of delineation is shown in Fig. 4 (a).Can know by Fig. 4 (a); Adopt the laser beam of existing common nanosecond laser to carry out the not thorough of P1 delineation first groove, 51 delineations that operation obtained; Rough, more inhomogeneous, of poor quality; Cause the inner generation parallel connection of this silicon-based film solar cells like this, thereby reduced this silicon-based film solar cells photoelectric conversion efficiency.
The comparative example 2
The silicon-based film solar cells structure of present embodiment is as shown in Figure 2, and this silicon-based film solar cells preparation method is:
S31: be provided at the substrate 1 that the surface is coated with the printing opacity of light transmitting conductive oxide layer (tco layer) 2;
S32: according to the method for above-mentioned steps S12; Open existing common nanosecond laser then; Make this nanosecond laser emitted laser bundle pass substrate 1 and arrive on the tco layer 2, and draw and carve this tco layer 2, be spaced apart two first grooves 51 side by side of 10mm with formation; Promptly carry out the delineation operation of P1, these two first groove 51 width are 25 μ m; Wherein, the wavelength of laser beam is 355nm;
S33: adopt the PECVD method, it is the semiconductor optoelectronic conversion coating 3 of 2 μ m that the conductive oxide layer 2 of first groove 51 and substrate 1 facing surfaces plating thickness are arranged in delineation;
S34: according to the method for above-mentioned steps S22, apply the laser beam of existing common nanosecond laser, carry out the delineation operation of P2;
S35: adopt vacuum magnetic-control sputtering method method, it is the dorsum electrode layer 4 of 1 μ m that the semiconductor optoelectronic conversion coating 3 of second groove 52 and conductive oxide layer 2 facing surfaces plating thickness are arranged in delineation;
S36: with reference to the method for above-mentioned steps S22, apply the laser beam of existing common nanosecond laser, carry out the delineation operation of P3.
In the silicon-based film solar cells structure of this comparative example 2 preparations, first groove 51 of delineation is shown in Fig. 4 (b).Can know that by Fig. 4 (b) quality that adopts the laser beam of existing common nanosecond laser to carry out P1 delineation first groove 51 that operation obtained is compared the quality of first groove 51 among the comparative example 1 and omit, still compares with Fig. 3; First groove 51 of the acquisition of this comparative example 2 delineations is still not thorough; Rough, inhomogeneous, of poor quality; Cause the inner generation parallel connection of this silicon-based film solar cells so equally, thereby reduced this silicon-based film solar cells photoelectric conversion efficiency.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a silicon-based film solar cells preparation method comprises the steps:
Be provided at the substrate that the surface is coated with the printing opacity of light transmitting conductive oxide layer;
Apply the picosecond laser bundle, make said picosecond laser bundle pass said substrate and arrive said conductive oxide layer, and draw and carve said conductive oxide layer, run through first groove of said conductive oxide layer with formation;
Conductive oxide layer and said substrate facing surfaces plating semiconductor optoelectronic conversion coating that first groove is arranged in said delineation;
Apply the picosecond laser bundle, make said picosecond laser bundle pass said substrate and conductive oxide layer arrives said semiconductor optoelectronic conversion coating, and draw and carve said semiconductor optoelectronic conversion coating, run through second groove of said semiconductor optoelectronic conversion coating with formation;
Semiconductor optoelectronic conversion coating and said conductive oxide layer facing surfaces plating dorsum electrode layer that second groove is arranged in said delineation;
Apply the picosecond laser bundle; Make said picosecond laser bundle pass said substrate, conductive oxide layer and semiconductor optoelectronic conversion coating and arrive said dorsum electrode layer; And draw and carve said semiconductor optoelectronic conversion coating and dorsum electrode layer, run through the 3rd groove of said semiconductor optoelectronic conversion coating and dorsum electrode layer with formation;
Wherein, said picosecond laser bundle is launched by picosecond laser.
2. according to the silicon-based film solar cells preparation method of claim 1, it is characterized in that: the pulse duration of said picosecond laser bundle is 10ps～15ps, and repetition rate is 100～500KHz.
3. silicon-based film solar cells preparation method according to claim 1 is characterized in that: when said first groove of delineation, the wavelength of said picosecond laser bundle is 1064nm; The power output of said picosecond laser is 0.8W, and pulse energy is 8 μ J.
4. silicon-based film solar cells preparation method according to claim 1 is characterized in that: when said second groove of delineation, and the wavelength 532nm of said picosecond laser bundle; The power output of said picosecond laser is 0.2W, and pulse energy is 2 μ J.
5. silicon-based film solar cells preparation method according to claim 1 is characterized in that: when said the 3rd groove of delineation, and the wavelength 532nm of said picosecond laser bundle; The power output of said picosecond laser is 0.4W, and pulse energy is 4 μ J.
6. silicon-based film solar cells preparation method according to claim 1 is characterized in that: said picosecond laser bundle comprises for drawing to be carved effective live part and carves invalid invalid part for drawing.
7. silicon-based film solar cells preparation method according to claim 1; It is characterized in that: said first groove, second groove and the 3rd groove all are to extend to relative another side from a side of said silicon-based film solar cells apart from one another by offering; Said first groove has two at least, and spaced apart being located on the conductive oxide layer; Said second groove has two at least, and spaced apart being located on the semiconductor optoelectronic conversion coating, and said the 3rd groove has two at least, and spaced apart being located on semiconductor optoelectronic conversion coating and the dorsum electrode layer.
8. silicon-based film solar cells preparation method according to claim 5 is characterized in that: the spacing of the spacing of said adjacent first groove, adjacent second groove and the spacing of adjacent the 3rd groove are respectively 2mm～10mm.
9. silicon-based film solar cells preparation method according to claim 1 is characterized in that: the width of the width of said first groove, second groove and the width of the 3rd groove are 25 μ m～50 μ m.
10. silicon-based film solar cells preparation method according to claim 1 is characterized in that: the mode of said plating conductive oxide layer and dorsum electrode layer is a vacuum magnetic-control sputtering; The mode of said plating semiconductor optoelectronic conversion coating is that ion strengthens chemical vapour deposition technique.
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| JP2019067914A (en) * | 2017-09-29 | 2019-04-25 | 積水化学工業株式会社 | Manufacturing method of solar battery and the same |
| CN112133787A (en) * | 2020-08-31 | 2020-12-25 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin film solar cell module and preparation method thereof |
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| CN112133787B (en) * | 2020-08-31 | 2021-06-11 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin-film solar cell module and preparation method thereof |
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