CN102842485B - Silicon chip processing unit and processing method thereof - Google Patents
Silicon chip processing unit and processing method thereof Download PDFInfo
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- CN102842485B CN102842485B CN201110172219.6A CN201110172219A CN102842485B CN 102842485 B CN102842485 B CN 102842485B CN 201110172219 A CN201110172219 A CN 201110172219A CN 102842485 B CN102842485 B CN 102842485B
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- filter plate
- prealignment
- silicon chip
- exposure
- light
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 100
- 239000010703 silicon Substances 0.000 title claims abstract description 100
- 238000012545 processing Methods 0.000 title claims abstract description 30
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000007687 exposure technique Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 238000004422 calculation algorithm Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention discloses a kind of silicon chip processing unit and processing method thereof, in order to carry out prealignment and edge exposure to silicon chip.Silicon chip processing unit comprises light source and optical lens along light path.Optical lens comprises filter plate unit, filter plate unit comprises prealignment filter plate and exposure filter plate, the prealignment light of filter plate by prealignment wave band, the exposure light of filter plate by exposure wave band, one of prealignment filter plate and exposure filter plate are placed in operating state.The silicon chip processing unit that the present invention proposes, silicon chip edge exposure and prealignment use same light source and same optical lens, transducer and silicon slice rotating platform, improve capacity usage ratio, reduce the cost of whole system, also improve reliability and the compactedness of whole system simultaneously.
Description
Technical field
The present invention relates to a kind of silicon chip processing unit, and in particular to a kind of silicon chip processing unit of integrated several functions, its silicon slice processing method also proposes in the lump.
Background technology
Plating encapsulates one of very important technique after IC circuit, it utilizes the edge of silicon chip to do anode, plating window in the middle of silicon chip does negative electrode, then between negative and positive the two poles of the earth, add certain direct-current working volts, controlled the height of metal coupling by the concentration controlling electroplate liquid in size of current and electroplating bath.
Because photoresist is non-conductive, before electroplating technology, therefore need the photoresist of silicon chip edge to remove, trimming width size depends on the trimming width of front road silicon chip edge exposure (WaferEdgeExclusion, WEE) technique.
Traditional silicon chip Deriming method is a lot, but total has been summed up two large classes: chemical change-edge method and edge exposure method.Chemistry change-edge method utilizes silicon chip in gluing process, by spraying solvent to eliminate silicon chip edge photoresist to silicon chip edge, the shortcoming of the method is that the trimming time is long, solvent consumables cost is high and solvent is easily sprayed onto silicon chip intermediate pattern region, has a strong impact on graphical quality.Edge exposure method be by silicon chip by vacuum suction on rotation platform, above silicon chip edge, fix a set of uv-exposure camera lens to produce the Uniform Illumination hot spot of a certain size size, then utilize the rotation of rotating platform to realize silicon chip edge exposure.Compare chemical change-edge method, edge exposure method has that production efficiency is high, installation cost is low and process is easy to the advantages such as control.
Meanwhile, in edge exposure process, silicon chip is transferred to after on silicon slice rotating platform, will be completed the centering of silicon chip by wafer pre-alignment, to reach uniform trimming effect.
In prior art, wafer pre-alignment and silicon chip edge exposure are by two cover light sources and two cover optical lens, and the object controlled is more, and system is complicated, and energy resource consumption is higher, and cost is also higher.
Summary of the invention
The present invention proposes a kind of silicon chip processing unit and processing method thereof, can solve the problem.
In order to achieve the above object, the present invention discloses a kind of silicon chip processing unit, in order to carry out prealignment and edge exposure to silicon chip.Silicon chip processing unit comprises light source and optical lens along light path.Optical lens comprises filter plate unit, filter plate unit comprises prealignment filter plate and exposure filter plate, the prealignment light of filter plate by prealignment wave band, the exposure light of filter plate by exposure wave band, one of prealignment filter plate and exposure filter plate are placed in operating state.
Furtherly, the spectral band of light source covers prealignment wave band and exposure wave band.
Furtherly, also comprise control unit, be electrically connected filter plate unit, in order to switch prealignment filter plate and exposure filter plate is placed in operating state.
The present invention also provides a kind of silicon slice processing method, silicon chip processing unit is adopted to process silicon chip, silicon chip processing unit comprises filter plate unit, filter plate unit comprises prealignment filter plate and exposure filter plate, the prealignment light of filter plate by prealignment wave band, the exposure light of filter plate by exposure wave band, it is characterized in that, silicon slice processing method comprises the following steps:
Open light source; And
Switch the light path that prealignment filter plate is arranged in light source, prealignment is carried out to silicon chip.
Furtherly, silicon slice processing method also comprises:
Switch the light path that exposure filter plate is arranged in light source, edge exposure is carried out to silicon chip.
The present invention also provides a kind of silicon slice processing method, silicon chip processing unit is adopted to process silicon chip, silicon chip processing unit comprises filter plate unit, filter plate unit comprises prealignment filter plate and exposure filter plate, the prealignment light of filter plate by prealignment wave band, the exposure light of filter plate by exposure wave band, it is characterized in that, silicon slice processing method comprises the following steps:
Open light source; And
Switch the light path that exposure filter plate is arranged in light source, edge exposure is carried out to silicon chip.
Furtherly, silicon slice processing method also comprises:
Switch the light path that prealignment filter plate is arranged in light source, prealignment is carried out to silicon chip.
The silicon chip processing unit that the present invention proposes, silicon chip edge exposure and prealignment use same light source and same optical lens, transducer and silicon slice rotating platform, improve capacity usage ratio, reduce the cost of whole system, also improve reliability and the compactedness of whole system simultaneously.
Accompanying drawing explanation
Figure 1 shows that the structural representation of silicon chip processing unit of the present invention.
Figure 2 shows that the silicon chip processing unit of present pre-ferred embodiments is to the processing method of silicon chip.
Embodiment
In order to more understand technology contents of the present invention, illustrate as follows appended by also coordinating especially exemplified by specific embodiment.
Please refer to Fig. 1, Figure 1 shows that the structural representation of silicon chip processing unit of the present invention.
Silicon chip processing unit is in order to process the silicon chip 9 be fixed on silicon slice rotating platform 8.
Silicon chip processing unit comprises following element along light path: light source 6, light source shutter 5, optical lens 4, photodetector shutter 2, photodetector 1.
Silicon chip processing unit also comprises control unit 7, is electrically connected at light source 6, light source shutter 5, optical lens 4, photodetector shutter 2, photodetector 1, silicon slice rotating platform 8, in order to control above element.
Light source 6 is high-pressure mercury lamp light source, and spectral band is wider, covers prealignment wave band and exposure wave band.
Light source shutter 5, opens during system works.Close when system does not work, avoid light in optical lens.
Optical lens 4 comprises hot spot diaphragm 3, can form the hot spot of given shape to the exposure light of wave band and the light of prealignment wave band at silicon chip 9 upper surface place plane and photodetector 1 test surface simultaneously.The Energy distribution of this hot spot has good uniformity.
Optical lens 4 also comprises filter plate unit 400.Filter plate unit 400 comprises two kinds of filter plates: prealignment filter plate 401 and exposure filter plate 402.Filter plate 401 through light be the light of prealignment wave band, be visible ray, for the prealignment of silicon chip 9, avoid the light exposing wave band to be exposed by the photoresist on silicon chip 9 surface.Filter plate 402 through light for exposure wave band, for the edge exposure of silicon chip 9.
Photodetector shutter 2, closes in silicon chip edge exposure process, avoids exposure light to incide in photodetector 1 and goes, and extends the life-span of photodetector 1.
Photodetector 1 pair of exposure light and prealignment light all responsive, the coherent signal of prealignment and edge exposure is gathered, and is sent to control unit 7 and processes.
Photodetector 1 is mainly used in the prealignment of silicon chip 9, also can on a spinstand without the size and the position that calculate hot spot when silicon chip, can also detect exposure spot in the process of silicon chip 9 edge exposure, in order to the online exposed width calculating silicon chip 9 edge in real time.
Control unit 7 is electrically connected to photoelectric sensor 1, light source 6, silicon slice rotating platform 8, light source shutter 5, hot spot diaphragm 3, photodetector shutter 2, filter plate switching device shifter 400, and stores spot size and position calculation algorithm (comprising the demarcation relation between silicon chip upper surface and photodetector test surface given shape hot spot), wafer pre-alignment signal processing algorithm and edge exposure width measure algorithm.In prealignment technique, prealignment filter plate 401 is placed in operating state by control unit 7; In edge exposure technique, exposure filter plate 402 is placed in operating state.
Silicon slice rotating platform 8 is controlled by control unit 7, realizes the absorption to silicon chip 9, and then by rotating the prealignment and the edge exposure that realize silicon chip 9.
Figure 2 shows that the silicon chip processing unit of present pre-ferred embodiments is to the processing method of silicon chip, incorporated by reference to reference to figure 1, Fig. 2.
Step 201 ~ 204: prealignment filter plate 401 is placed in operating state, open light source shutter 5 and light source 6, measure spot size and position.
Step 205 ~ 207: whether correctly to judge spot size, position, if so, open photodetector shutter 2, carry out wafer pre-alignment; If not, then after adjusting hot spot diaphragm 3, open photodetector shutter 2, carry out wafer pre-alignment.
Step 208 ~ 209: judge whether to need to carry out edge exposure, if so, exposure filter plate 402 is placed in operating state,
Step 210 ~ 211: judge whether to need to measure exposed width, if need to measure, carry out exposure and measure width simultaneously.
Step 212: if width is incorrect, then perform step 206, adjustment hot spot diaphragm 3.
Step 213 ~ 214: measure exposed width if do not need, close photodetector shutter 2, carry out edge exposure.
Step 215 ~ 217: judge whether silicon chip in addition, if had, perform step 207, enter wafer pre-alignment, if do not had, close light source 6, close light source shutter 5, device powers down.
According to the above description, those skilled in the art are known, when prealignment technique completes, if desired carry out edge exposure to silicon chip 9, then can directly carry out steps 208, namely without prealignment technique, directly carry out edge exposure to silicon chip 9.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (4)
1. a silicon chip processing unit, in order to carry out prealignment and edge exposure to silicon chip, the centering of silicon chip is completed by above-mentioned prealignment, by above-mentioned edge exposure, utilize the edge of silicon chip to do anode, the plating window in the middle of silicon chip does negative electrode, then between negative and positive the two poles of the earth, certain direct-current working volts are added, controlled the height of metal coupling by the concentration controlling electroplate liquid in size of current and electroplating bath, it is characterized in that, described silicon chip processing unit comprises along light path:
Light source; And
Optical lens, comprise filter plate unit, described filter plate unit comprises prealignment filter plate and exposure filter plate, described prealignment filter plate is by the light of prealignment wave band, described exposure filter plate is by the light of exposure wave band, and one of described prealignment filter plate and described exposure filter plate are placed in operating state;
Also comprise control unit, be electrically connected described filter plate unit, in order to switch described prealignment filter plate and described exposure filter plate is placed in operating state, in prealignment technique, prealignment filter plate is placed in operating state by control unit, in edge exposure technique, exposure filter plate is placed in operating state by control unit.
2. silicon chip processing unit according to claim 1, is characterized in that, the spectral band of described light source covers prealignment wave band and exposure wave band.
3. a silicon slice processing method, silicon chip processing unit is adopted to process silicon chip, described silicon chip processing unit comprises filter plate unit, described filter plate unit comprises prealignment filter plate and exposure filter plate, described prealignment filter plate is by the light of prealignment wave band, described exposure filter plate is by the light of exposure wave band, and it is characterized in that, described silicon slice processing method comprises the following steps successively:
Open light source; And
Switch the light path that described prealignment filter plate is arranged in described light source, prealignment is carried out to described silicon chip;
Switch the light path that described exposure filter plate is arranged in described light source, edge exposure is carried out to described silicon chip.
4. a silicon slice processing method, silicon chip processing unit is adopted to process silicon chip, described silicon chip processing unit comprises filter plate unit, described filter plate unit comprises prealignment filter plate and exposure filter plate, described prealignment filter plate is by the light of prealignment wave band, described exposure filter plate is by the light of exposure wave band, and it is characterized in that, described silicon slice processing method comprises the following steps successively:
Open light source; And
Switch the light path that described exposure filter plate is arranged in described light source, edge exposure is carried out to described silicon chip;
Switch the light path that described prealignment filter plate is arranged in described light source, prealignment is carried out to described silicon chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110172219.6A CN102842485B (en) | 2011-06-23 | 2011-06-23 | Silicon chip processing unit and processing method thereof |
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| CN201110172219.6A CN102842485B (en) | 2011-06-23 | 2011-06-23 | Silicon chip processing unit and processing method thereof |
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| CN102842485A CN102842485A (en) | 2012-12-26 |
| CN102842485B true CN102842485B (en) | 2016-01-20 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015135782A1 (en) * | 2014-03-12 | 2015-09-17 | Asml Netherlands B.V. | Sensor system, substrate handling system and lithographic apparatus |
| CN105762101B (en) * | 2014-12-19 | 2019-02-19 | 北京北方华创微电子装备有限公司 | Wafer locating device and method |
| CN104991426B (en) * | 2015-08-12 | 2017-03-08 | 西安工业大学 | Auxiliary exposure device for multi-beam interference lithography |
| CN108605080B (en) | 2016-02-17 | 2021-06-08 | 深圳市大疆创新科技有限公司 | Mode selection assembly and method for selecting imaging mode |
| CN105629679B (en) * | 2016-03-22 | 2017-11-10 | 武汉华星光电技术有限公司 | Edge exposure machine and edge exposure region code printing method |
| CN107561864B (en) | 2016-06-30 | 2019-10-25 | 上海微电子装备（集团）股份有限公司 | Edge exposure device and method |
| CN108387174A (en) * | 2017-02-03 | 2018-08-10 | 山东华光光电子股份有限公司 | A kind of semiconductor laser chip encapsulation precision detection method and device |
| CN107463070B (en) * | 2017-09-22 | 2019-08-30 | 深圳市华星光电技术有限公司 | Exposure light source system |
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| CN1573406A (en) * | 2003-05-30 | 2005-02-02 | 株式会社Orc制作所 | Apparatus and method for projection exposure |
| TWI283436B (en) * | 2005-10-17 | 2007-07-01 | Advanced Semiconductor Eng | Photolithography system for semiconductor process |
| CN101458453A (en) * | 2007-12-11 | 2009-06-17 | 上海华虹Nec电子有限公司 | Projection aligner |
| CN101498897A (en) * | 2008-12-17 | 2009-08-05 | 上海微电子装备有限公司 | Edge exposure device and its control method |
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| KR20040079493A (en) * | 2003-03-07 | 2004-09-16 | 주식회사 하이닉스반도체 | Expose device and method thereof |
| NL1035970A1 (en) * | 2007-09-28 | 2009-04-03 | Asml Holding Nv | Lithographic Apparatus and Device Manufacturing Method. |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1573406A (en) * | 2003-05-30 | 2005-02-02 | 株式会社Orc制作所 | Apparatus and method for projection exposure |
| TWI283436B (en) * | 2005-10-17 | 2007-07-01 | Advanced Semiconductor Eng | Photolithography system for semiconductor process |
| CN101458453A (en) * | 2007-12-11 | 2009-06-17 | 上海华虹Nec电子有限公司 | Projection aligner |
| CN101498897A (en) * | 2008-12-17 | 2009-08-05 | 上海微电子装备有限公司 | Edge exposure device and its control method |
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Address after: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Pudong New Area East Road, No. 1525, Shanghai Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |