CN102838987B - Europium and cerium co-doped yttrium oxide luminescent film, preparation method thereof, and organic electroluminescent device - Google Patents
Europium and cerium co-doped yttrium oxide luminescent film, preparation method thereof, and organic electroluminescent device Download PDFInfo
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- CN102838987B CN102838987B CN201110170063.8A CN201110170063A CN102838987B CN 102838987 B CN102838987 B CN 102838987B CN 201110170063 A CN201110170063 A CN 201110170063A CN 102838987 B CN102838987 B CN 102838987B
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- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052684 Cerium Inorganic materials 0.000 title abstract description 4
- 229910052693 Europium Inorganic materials 0.000 title abstract description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 title abstract 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 title abstract 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 12
- IZCUOLNYELHOEC-UHFFFAOYSA-N [Eu].[Ce] Chemical compound [Eu].[Ce] IZCUOLNYELHOEC-UHFFFAOYSA-N 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000005401 electroluminescence Methods 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000001816 cooling Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229960000935 dehydrated alcohol Drugs 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 2
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
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- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the field of luminescent materials, and discloses a europium and cerium co-doped yttrium oxide luminescent film, a preparation method thereof, and an organic electroluminescent device. The luminescent film has a chemical general formula of Y2O3:xEu<+3>,yCe<+3>, wherein Y2O3 is a substrate, Ce<+3> and Eu<+3> are doped elements, x ranges from 0.0006 to 0.0327, and y ranges from 0.00007 to 0.007. According to the invention, a magnetron sputtering equipment is adopted for preparing the europium and cerium co-doped yttrium oxide luminescent film. The film has strong luminescence peak in 530nm and 610nm wavelength regions, and is a development material of electroluminescent devices.
Description
Technical field
The present invention relates to photo-electroluminescence film field, relate in particular to a kind of europium cerium codoped yttrium oxide light-emitting film and preparation method thereof.The invention still further relates to a kind of organic electroluminescence device of this europium cerium codoped yttrium oxide light-emitting film as luminescent layer that use.
Background technology
Compared with the display screen made from traditional luminescent powder, light-emitting film contrast gradient, resolving power, thermal conduction, homogeneity, and the aspect such as tack, outgas speed of substrate all demonstrate stronger superiority.Therefore,, as functional materials, light-emitting film has broad application prospects in the flat pannel display field such as such as cathode tube (CRTs), electroluminescent demonstration (ELDs) and Field Emission Display (FEDs).
In the research of LED fluorescent material, rear-earth-doped yttrium oxide fluorescent luminescent powder, the emmission spectrum that its excitation spectrum can mate existing near ultraviolet LED preferably can obtain good ruddiness exciting to blue light.But, be prepared into the film of electroluminescent device with europium cerium doped yttrium oxide class luminescent material, have not yet to see report.
Summary of the invention
It is a kind of with Y that the object of the invention is to provide
2o
3for matrix, Ce and the Eu element europium cerium codoped yttrium oxide light-emitting film that is main luminescence center.
Europium cerium codoped yttrium oxide light-emitting film of the present invention, the chemical general formula of film is Y
2o
3: xEu
+ 3, yCe
+ 3; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element; The span of x is that the span of 0.0006～0.0327, y is 0.00007～0.007; The value that preferably value of x is 0.0049, y is 0.00056.
Another goal of the invention of the present invention is to provide the preparation method of above-mentioned europium cerium codoped yttrium oxide light-emitting film, and its preparation technology is as follows:
The preparation of step S1, ceramic target: according to chemical general formula Y
2o
3: xEu
+ 3, yCe
+ 3each element chemistry metering ratio, selects Y
2o
3, Eu
2o
3and CeO
2powder, after even mixing, at 900～1300 DEG C, (preferably sintering at 1250 DEG C, obtains target; Wherein, the span that the span of x is 0.0006～0.0327, y is 0.00007～0.007; Preferably, the value that the value of x is 0.0049, y is 0.00056;
Step S2, the target in step S1 and substrate are packed into the vacuum cavity of magnetic-controlled sputtering coating equipment, the vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa～1.0 × 10
-5pa, preferably vacuum tightness is 5.0 × 10
-4pa;
Step S3, adjustment magnetron sputtering plating processing parameter are: base target spacing is 45～90mm, preferably 60mm; Underlayer temperature is 250 DEG C～750 DEG C, preferably 500 DEG C; Gas flow 10～the 35sccm of argon gas working gas, preferably 25sccm; Magnetron sputtering operating pressure 0.2～4Pa, preferably 2.0Pa; After processing parameter has been adjusted, be then filmed, obtain film sample;
Step S4, the film sample that step S3 is obtained are placed in vacuum oven, (being 0.01Pa) anneal 1～3h under 500～800 DEG C (preferably 600 DEG C), vacuum state (preferably 2h), and obtaining chemical general formula is Y
2o
3: xEu
+ 3, yCe
+ 3europium cerium codoped yttrium oxide light-emitting film; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element.
The present invention also provides a kind of organic electroluminescence device, and this device is straticulate structure, and this straticulate structure is followed successively by substrate, anode layer, luminescent layer and cathode layer; Wherein, luminescent layer is that (chemical general formula of this film is Y to europium cerium codoped yttrium oxide light-emitting film
2o
3: xEu
+ 3, yCe
+ 3; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element; The span of x is that the span of 0.0006～0.0327, y is 0.00007～0.007; Preferably, the value that the value of x is 0.0049, y is 0.00056), substrate is glass, and anode layer is ITO, and cathode layer is Ag layer, and Ag layer adopts evaporation process to prepare at film surface.
The present invention adopts magnetron sputtering equipment, prepares europium cerium codoped yttrium oxide light-emitting film, obtains, in the electroluminescent spectrum (EL) of film, having very strong glow peak at 530nm and 610nm wavelength zone, is the development material of electroluminescent device.
Brief description of the drawings
Fig. 1 is preparation technology's schema of europium cerium codoped yttrium oxide light-emitting film of the present invention;
Fig. 2 is the structural representation of organic electroluminescence device of the present invention;
Fig. 3 is the electroluminescent spectrum that embodiment 4 obtains europium cerium codoped yttrium oxide light-emitting film sample.
Embodiment
The present invention is in a kind of europium cerium codoped yttrium oxide light-emitting film providing, and it is Y that this europium cerium codoped yttrium oxide light-emitting film comprises film general formula
2o
3: xEu
+ 3, yCe
+ 3; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element, be also active element, and serve as main luminescence center; The span of x is that the span of 0.0006～0.0327, y is 0.00007～0.007; The value that preferably value of x is 0.0049, y is 0.00056.
Above-mentioned europium cerium codoped yttrium oxide light-emitting film preparation method provided by the invention, as shown in Figure 1, its preparation technology is as follows:
The preparation of step S1, ceramic target: according to chemical general formula Y
2o
3: xEu
+ 3, yCe
+ 3each element chemistry metering ratio, selects Y
2o
3, Eu
2o
3and CeO
2powder, after even mixing, at 900～1300 DEG C (preferably 1250 DEG C) lower sintering, naturally cooling, obtains target sample, and it is the target that 50mm, thickness are 2mm that target sample is cut into diameter; Wherein, the span that the span of x is 0.0006～0.0327, y is 0.00007～0.007; The value that preferably value of x is 0.0049, y is 0.00056;
Step S2, the target in step S1 and substrate are packed into the vacuum cavity of magnetic-controlled sputtering coating equipment, the vacuum tightness of cavity is evacuated to 1.0 × 10 with mechanical pump and molecular pump
-3pa～1.0 × 10
-5pa, preferably 5.0 × 10
-4pa;
Step S3, adjustment magnetron sputtering plating processing parameter are: base target spacing is 45～90mm, preferably 60mm; Underlayer temperature is 250 DEG C～750 DEG C, preferably 500 DEG C; Gas flow 10～the 35sccm of argon gas working gas, preferably 25sccm; Magnetron sputtering operating pressure 0.2～4Pa, preferably 2.0Pa; Processing parameter is then filmed after adjusting, and obtains film sample;
Step S4, the film sample that step S3 is obtained are placed in vacuum oven, (being 0.01Pa) anneal 1～3h under 500～800 DEG C (preferably 600 DEG C), vacuum state (preferably 2h), and obtaining chemical general formula is Y
2o
3: xEu
+ 3, yCe
+ 3described europium cerium codoped yttrium oxide light-emitting film; Wherein, Y
2o
3. be matrix, Ce
+ 3and Eu
+ 3for doped element.
In above-mentioned preparation method step S1, according to chemical general formula Y
2o
3: xEu
+ 3, yCe
+ 3each element chemistry metering ratio, the actual Y that weighs
2o
3, CeO
2and Eu
2o
3when powder, by mass percentage: CeO
2account for 0.01～1wt% of total amount, preferably 0.08wt%; Eu
2o
3account for 0.01～5wt% of total amount, preferably 0.75wt%; Y
2o
3account for 94～99.98wt% of total amount, preferably 99.17wt%.
The present invention also provides a kind of organic electroluminescence device, and as shown in Figure 2, this device is straticulate structure, and this straticulate structure is followed successively by substrate 1, anode layer 2, luminescent layer 3 and cathode layer 4; Wherein, substrate 1 is glass, and anode layer is ITO layer, i.e. ito glass can be bought acquisition; For europium cerium codoped yttrium oxide light-emitting film layer, (chemical general formula of this film is Y to luminescent layer 3
2o
3: xEu
+ 3, yCe
+ 3; Wherein, Y
2o
3for matrix, Ce and Eu are doped element; The span of x is that the span of 0.0006～0.0327, y is 0.00007～0.007; Preferably, the value that the value of x is 0.0049, y is 0.00056); Cathode layer 4 is Ag layer, and Ag layer adopts evaporation process to prepare at film surface.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1
1, select purity to be respectively 99.99% Y
2o
3, CeO
2and Eu
2o
3powder (wherein, Y
2o
3quality be 198.34g, CeO
2quality be 0.16g, Eu
2o
3quality be 1.5g), after even mixing, sintering at 1250 DEG C, naturally cooling, obtains target sample, it is the target that 50mm, thickness are 2mm that target sample is cut into diameter;
2, target is packed in the vacuum cavity of magnetic-controlled sputtering coating equipment;
3, successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass, and it is carried out to oxygen plasma treatment, put into the vacuum cavity of magnetic-controlled sputtering coating equipment after complete; Wherein, the base target spacing setting of target and glass is 60mm;
4, with mechanical pump and molecular pump, the vacuum tightness of the vacuum cavity of magnetic-controlled sputtering coating equipment is extracted into 5.0 × 10
-4pa;
5, adjust magnetron sputtering plating processing parameter: argon gas working gas flow is 25sccm; Magnetron sputtering operating pressure is 2.0Pa; Underlayer temperature is 500 DEG C; Then be filmed the film sample obtaining;
6, film sample is annealed in 0.01Pa vacuum oven 2h, annealing temperature is 600 DEG C, obtains europium cerium codoped yttrium oxide light-emitting film, i.e. Y
2o
3: 0.0049Eu
+ 3, 0.00056Ce
+ 3.
Embodiment 2
1,, select purity to be respectively 99.99% Y
2o
3, CeO
2and Eu
2o
3powder (wherein, Y
2o
3quality be 199.96g, CeO
2quality be 0.002g, Eu
2o
3quality be 0.002g), after even mixing, sintering at 900 DEG C, naturally cooling, obtains target sample, it is the target that 50mm, thickness are 2mm that target sample is cut into diameter;
2, target is packed in the vacuum cavity of magnetic-controlled sputtering coating equipment;
3, successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning glass, and it is carried out to oxygen plasma treatment, put into the vacuum cavity of magnetic-controlled sputtering coating equipment after complete; Wherein, the base target spacing setting of target and glass is 45mm;
4, with mechanical pump and molecular pump, the vacuum tightness of the vacuum cavity of magnetic-controlled sputtering coating equipment is extracted into 1.0 × 10
-3pa;
5, adjust magnetron sputtering plating processing parameter: argon gas working gas flow is 10sccm; Magnetron sputtering operating pressure is 4Pa; Underlayer temperature is 250 DEG C; Then be filmed the film sample obtaining;
6, film sample is annealed in 0.01Pa vacuum oven 1h, annealing temperature is 500 DEG C, obtains europium cerium codoped yttrium oxide light-emitting film, i.e. Y
2o
3: 0.0006Eu
+ 3, 0.00007Ce
+ 3.
Embodiment 3
1, select purity to be respectively 99.99% Y
2o
3, CeO
2and Eu
2o
3powder (wherein, Y
2o
3quality be 188g, CeO
2quality be 6g, Eu
2o
3quality be 10g), after even mixing, sintering at 1300 DEG C, naturally cooling, obtains target sample, it is the target that 50mm, thickness are 2mm that target sample is cut into diameter;
2, target is packed in the vacuum cavity of magnetic-controlled sputtering coating equipment;
3, successively by acetone, dehydrated alcohol and deionized water ultrasonic cleaning band glass substrate, and it is carried out to oxygen plasma treatment, put into the vacuum cavity of magnetic-controlled sputtering coating equipment after complete; Wherein, the base target spacing setting of target and glass is 90mm;
4, with mechanical pump and molecular pump, the vacuum tightness of the vacuum cavity of magnetic-controlled sputtering coating equipment is extracted into 1.0 × 10
-5pa;
5, adjust magnetron sputtering plating processing parameter: argon gas working gas flow is 35sccm; Magnetron sputtering operating pressure is 0.2Pa; Underlayer temperature is 750 DEG C; Then be filmed the film sample obtaining;
6, film sample is annealed in 0.01Pa vacuum oven 3h, annealing temperature is 800 DEG C, obtains europium cerium codoped yttrium oxide light-emitting film, i.e. Y
2o
3: 0.0327Eu
+ 3, 0.007Ce
+ 3.
In following embodiment 4, substrate is glass, and anode layer is ITO, plays electric action, and both are combined, and are called ito glass, can buy acquisition.
Embodiment 4
1, select purity to be respectively 99.99% Y
2o
3, CeO
2and Eu
2o
3powder (wherein, Y
2o
3quality be 193.8g, CeO
2quality be 6g, Eu
2o
3quality be 0.02g), after even mixing, sintering at 1250 DEG C, naturally cooling, obtains target sample, it is the target that 50mm, thickness are 2mm that target sample is cut into diameter;
2, target is packed in the vacuum cavity of magnetic-controlled sputtering coating equipment;
3, successively with acetone, dehydrated alcohol and deionized water ultrasonic cleaning band ito glass, and it is carried out to oxygen plasma treatment, put into the vacuum cavity of magnetic-controlled sputtering coating equipment after complete; Wherein, the base target spacing setting of target and ito glass is 60mm;
4, with mechanical pump and molecular pump, the vacuum tightness of the vacuum cavity of magnetic-controlled sputtering coating equipment is extracted into 5.0 × 10
-4pa;
5, adjust magnetron sputtering plating processing parameter: argon gas working gas flow is 25sccm; Magnetron sputtering operating pressure is 2.0Pa; Underlayer temperature is 500 DEG C; Then be filmed the film sample obtaining, i.e. Y
2o
3: 0.0006Eu
+ 3, 0.007Ce
+ 3;
6, film sample is annealed in 0.01Pa vacuum oven 2h, annealing temperature is 700 DEG C, obtains europium cerium codoped yttrium oxide light-emitting film;
7, adopt evaporation coating technique, the light-emitting film surface evaporation Ag layer in (6), as cathode layer, makes organic electroluminescence device.
Fig. 3 is electroluminescent spectrum (EL) figure that embodiment 4 obtains europium cerium codoped yttrium oxide light-emitting film sample.As shown in Figure 3, obtaining, in the electroluminescent spectrum (EL) of film, having very strong glow peak at 530nm and 610nm wavelength zone, is the development material of electroluminescent device.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (10)
1. an europium cerium codoped yttrium oxide light-emitting film, is characterized in that, the chemical general formula of this light-emitting film is Y
2o
3: xEu
+ 3, yCe
+ 3; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element; The span of x is that the span of 0.0006～0.0327, y is 0.00007～0.007.
2. europium cerium codoped yttrium oxide light-emitting film according to claim 1, is characterized in that, the value that the value of x is 0.0049, y is 0.00056.
3. a preparation method for europium cerium codoped yttrium oxide light-emitting film, is characterized in that, comprises the steps:
Step S1, according to chemical general formula Y
2o
3: xEu
+ 3, yCe
+ 3each element chemistry metering ratio, takes Y
2o
3, Eu
2o
3and CeO
2powder, after even mixing, sintering at 900～1300 DEG C, makes target; Wherein, the span that the span of x is 0.0006～0.0327, y is 0.00007～0.007;
Step S2, packs the target obtaining in step S1 and substrate the vacuum cavity of magnetic-controlled sputtering coating equipment into, and the vacuum tightness of vacuum cavity is arranged on to 1.0 × 10
-3pa～1.0 × 10
-5between Pa;
Step S3, adjustment magnetron sputtering plating processing parameter is: base target spacing is 45～90mm, magnetron sputtering operating pressure 0.2～4Pa, the flow 10～35sccm of argon gas working gas, underlayer temperature is 250 DEG C～750 DEG C; Then be filmed, obtain film sample;
Step S4,1～3h is processed in the film sample that step S3 is obtained vacuum annealing at 500～800 DEG C, and obtaining chemical general formula is Y
2o
3: xEu
+ 3, yCe
+ 3described europium cerium codoped yttrium oxide light-emitting film; Wherein, Y
2o
3for matrix, Ce
+ 3and Eu
+ 3for doped element.
4. the preparation method of europium cerium codoped yttrium oxide light-emitting film according to claim 3, is characterized in that, in described step S1, the span that the span of x is 0.0049, y is 0.00056.
5. according to the preparation method of the europium cerium codoped yttrium oxide light-emitting film described in claim 3 or 4, it is characterized in that, in described step S1, the sintering temperature of described preparation of target materials is 1250 DEG C.
6. the preparation method of europium cerium codoped yttrium oxide light-emitting film according to claim 3, is characterized in that, in described step S2, the vacuum tightness of vacuum cavity is arranged on 5.0 × 10
-4pa.
7. the preparation method of europium cerium codoped yttrium oxide light-emitting film according to claim 3, is characterized in that, in described step S3, described base target spacing is 60mm; Described magnetron sputtering operating pressure is 2.0Pa; The flow of described argon gas working gas is 25sccm; Described underlayer temperature is 500 DEG C.
8. the preparation method of europium cerium codoped yttrium oxide light-emitting film according to claim 3, is characterized in that, in described step S4, the annealing temperature in described anneal process is 600 DEG C, and annealing time is 2h.
9. an organic electroluminescence device, this organic electroluminescence device is straticulate structure, and this straticulate structure is followed successively by substrate, anode layer, luminescent layer and cathode layer, it is characterized in that, described luminescent layer is europium cerium codoped yttrium oxide light-emitting film, and the chemical general formula of this light-emitting film is Y
2o
3: xEu
+ 3, yCe
+ 3; Wherein, the span that the span of x is 0.0006～0.0327, y is 0.00007～0.007.
10. organic electroluminescence device according to claim 9, is characterized in that, the value that the value of x is 0.0049, y is 0.00056.
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|---|---|---|---|
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|---|---|---|---|
| CN201110170063.8A CN102838987B (en) | 2011-06-22 | 2011-06-22 | Europium and cerium co-doped yttrium oxide luminescent film, preparation method thereof, and organic electroluminescent device |
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|---|---|
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| CN102838987B true CN102838987B (en) | 2014-07-23 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367172A (en) * | 1993-06-01 | 1994-11-22 | E. I. Du Pont De Nemours And Company | Radiological system employing phosphors of different densities |
| CN1523077A (en) * | 2003-09-05 | 2004-08-25 | �й���ѧԺ�����о��� | Preparation method of rare earth oxide-based nano-luminescent powder |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917148B2 (en) * | 1979-02-20 | 1984-04-19 | 双葉電子工業株式会社 | phosphor |
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2011
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367172A (en) * | 1993-06-01 | 1994-11-22 | E. I. Du Pont De Nemours And Company | Radiological system employing phosphors of different densities |
| CN1523077A (en) * | 2003-09-05 | 2004-08-25 | �й���ѧԺ�����о��� | Preparation method of rare earth oxide-based nano-luminescent powder |
Non-Patent Citations (1)
| Title |
|---|
| JP昭55-110181A 1980.08.25 |
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