CN102832320A - LED chip eutectic bonding process - Google Patents
LED chip eutectic bonding process Download PDFInfo
- Publication number
- CN102832320A CN102832320A CN201210308270XA CN201210308270A CN102832320A CN 102832320 A CN102832320 A CN 102832320A CN 201210308270X A CN201210308270X A CN 201210308270XA CN 201210308270 A CN201210308270 A CN 201210308270A CN 102832320 A CN102832320 A CN 102832320A
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- Prior art keywords
- led chip
- eutectic
- temperature
- frequency
- operation platform
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Links
- 230000005496 eutectics Effects 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 13
- 238000004026 adhesive bonding Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000003784 tall oil Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 208000034189 Sclerosis Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The invention discloses an LED chip eutectic bonding process. An LED chip is bonded to an LED chip support by bonding. The LED chip eutectic bonding process includes steps of coated part preparation, adhering, die bonding, charging, temperature increasing and frequency increasing, and temperature decreasing and frequency decreasing. The LED chip eutectic bonding process is easy to implement and operate, and requirements for large-scale assembly of LED chips can be met.
Description
Technical field
The present invention relates to led chip assembly technology field, be specially a kind of led chip eutectic and cohere technology.
Background technology
Led chip need take into full account heat dissipation problem when cohering assembling, and prior art generally adopts the method for heat sink processing when guaranteeing heat dissipation problem, to realize fixing between led chip and the led chip support.
It is elargol that glue is cohered in the general employing of prior art, and because of elargol is cohering on heat radiation copper post that sclerosis glue event chip bottom can not be smooth fully, chip and copper post have certain slit, and radiating effect has just been had a greatly reduced quality.And this tradition is cohered the light source of technology and is had certain light decay.
Because the restriction of semiconductor light-emitting-diode wafer technologies at present, the photoelectric conversion efficiency of LED are still waiting to improve, especially great power LED; Because of its power higher; Nearly electric energy more than 10% will become heat energy and discharge (along with development of semiconductor, photoelectric conversion efficiency can improve gradually), and this just requires terminal client in utilizing high power LED product; Carry out heat radiation work, to guarantee great power LED product operate as normal.
Summary of the invention
The object of the invention provides a kind of led chip eutectic and coheres technology; The Yin Xiyin mixture can first liquefy just harden when solidifying then; Just make seamless being fixed on the led chip support of led chip; Effectively raise of the contact of led chip bottom, improved heat sink greatly and life-span led light source at the led chip support.It is elargol that glue is cohered in the general employing of prior art, and because of elargol is cohering on heat radiation copper post that sclerosis glue event chip bottom can not be smooth fully, chip and copper post have certain slit, and radiating effect has just been had a greatly reduced quality.And this tradition is cohered the light source of technology and is had certain light decay.
In order to achieve the above object, the technical scheme that the present invention adopted is:
A kind of led chip eutectic coheres technology, adopts the gluing mode that led chip is cohered on the led chip support, it is characterized in that: may further comprise the steps:
(1) being coated with part prepares: adopt supersonic wave cleaning machine; At first in the container of supersonic wave cleaning machine, pour absolute ethyl alcohol into; The container that the led chip support that will treat gluing is then put into supersonic wave cleaning machine cleans, and after the cleaning led chip support is put into drying box and handles 1 hour with 100 ℃ temperature drying;
(2) gluing: the led chip support after handling through step (1) is evenly smeared eutectic glue;
(3) solid brilliant: as on the led chip support behind (2) gluing set by step, to place sapphire structures and be coated with the led chip of metal substrate;
(4) charging: will set by step (3) led chip support of consolidating behind crystalline substance be fixed on the eutectic machine operation platform, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature that will be fixed with the eutectic machine operation platform of the led chip behind the solid crystalline substance is heated to 300 ℃ gradually, and design temperature rises with the speed of 1.5 ℃ of per seconds since 60 ℃ gradually in the temperature-rise period; The ultrasonic signal frequency of sending to eutectic machine operation platform is risen, and setpoint frequency rises to 1500 hertz gradually from 0 hertz in the raising frequency process, and raising frequency process and temperature-rise period step are consistent;
(6) cooling frequency reducing: sink to fully and led chip support closely after seamless the contacting through led chip on the microscopic examination eutectic machine operation platform; Adopt the ion fan that eutectic machine operation platform temperature is descended gradually; The ultrasonic signal frequency of sending to eutectic machine operation platform is descended gradually; And cooling and frequency reducing process step are consistent, and according to temperature that sets in advance and ultrasonic frequency, when arriving set point, automatically reset to initial point.
Described a kind of led chip eutectic coheres technology, it is characterized in that: eutectic glue is mixed and is obtained by silver powder, tin grain, liquid rosin in the step (2), and each composition weight branch is respectively in the eutectic glue:
Silver powder 38
Tin grain 52
Liquid rosin 10.
The present invention is easy to realize, processing ease can seamless being fixed on the led chip support with led chip securely when guaranteeing heat radiation, improved the heat conduction of led chip, improved the life-span of LED greatly.And can satisfy the extensive requirement of assembling of led chip.
Description of drawings
Fig. 1 is a method flow diagram of the present invention.
Embodiment
As shown in Figure 1.A kind of led chip eutectic coheres technology, adopts the gluing mode that led chip is cohered on the led chip support, may further comprise the steps:
(1) being coated with part prepares: adopt supersonic wave cleaning machine; At first in the container of supersonic wave cleaning machine, pour absolute ethyl alcohol into; The container that the led chip support that will treat gluing is then put into supersonic wave cleaning machine cleans, and after the cleaning led chip support is put into drying box and handles 1 hour with 100 ℃ temperature drying;
(2) gluing: the led chip support after handling through step (1) is evenly smeared eutectic glue;
(3) solid brilliant: as on the led chip support behind (2) gluing set by step, to place sapphire structures and be coated with the led chip of metal substrate;
(4) charging: will set by step (3) led chip support of consolidating behind crystalline substance be fixed on the eutectic machine operation platform, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature that will be fixed with the eutectic machine operation platform of the led chip behind the solid crystalline substance is heated to 300 ℃ gradually, and design temperature rises with the speed of 1.5 ℃ of per seconds since 60 ℃ gradually in the temperature-rise period; The ultrasonic signal frequency of sending to eutectic machine operation platform is risen, and setpoint frequency rises to 1500 hertz gradually from 0 hertz in the raising frequency process, and raising frequency process and temperature-rise period step are consistent;
(6) cooling frequency reducing: sink to fully and led chip support closely after seamless the contacting through led chip on the microscopic examination eutectic machine operation platform; Adopt the ion fan that eutectic machine operation platform temperature is descended gradually; The ultrasonic signal frequency of sending to eutectic machine operation platform is descended gradually; And cooling and frequency reducing process step are consistent, and according to temperature that sets in advance and ultrasonic frequency, when arriving set point, automatically reset to initial point.
Eutectic glue is mixed and is obtained by silver powder, tin grain, liquid rosin in the step (2), and each composition weight branch is respectively in the eutectic glue:
Silver powder 38
Tin grain 52
Liquid rosin 10.
Claims (2)
1. a led chip eutectic coheres technology, adopts the gluing mode that led chip is cohered on the led chip support, it is characterized in that: may further comprise the steps:
(1) being coated with part prepares: adopt supersonic wave cleaning machine; At first in the container of supersonic wave cleaning machine, pour absolute ethyl alcohol into; The container that the led chip support that will treat gluing is then put into supersonic wave cleaning machine cleans, and after the cleaning led chip support is put into drying box and handles 1 hour with 100 ℃ temperature drying;
(2) gluing: the led chip support after handling through step (1) is evenly smeared eutectic glue;
(3) solid brilliant: as on the led chip support behind (2) gluing set by step, to place sapphire structures and be coated with the led chip of metal substrate;
(4) charging: will set by step (3) led chip support of consolidating behind crystalline substance be fixed on the eutectic machine operation platform, and open temperature and ultrasonic sensing device knob;
(5) intensification raising frequency: the temperature that will be fixed with the eutectic machine operation platform of the led chip behind the solid crystalline substance is heated to 300 ℃ gradually, and design temperature rises with the speed of 1.5 ℃ of per seconds since 60 ℃ gradually in the temperature-rise period; The ultrasonic signal frequency of sending to eutectic machine operation platform is risen, and setpoint frequency rises to 1500 hertz gradually from 0 hertz in the raising frequency process, and raising frequency process and temperature-rise period step are consistent;
(6) cooling frequency reducing: sink to fully and led chip support closely after seamless the contacting through led chip on the microscopic examination eutectic machine operation platform; Adopt the ion fan that eutectic machine operation platform temperature is descended gradually; The ultrasonic signal frequency of sending to eutectic machine operation platform is descended gradually; And cooling and frequency reducing process step are consistent, and according to temperature that sets in advance and ultrasonic frequency, when arriving set point, automatically reset to initial point.
2. a kind of led chip eutectic according to claim 1 coheres technology, it is characterized in that: eutectic glue is mixed and is obtained by silver powder, tin grain, liquid rosin in the step (2), and each composition weight branch is respectively in the eutectic glue:
Silver powder 38
Tin grain 52
Liquid rosin 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210308270.XA CN102832320B (en) | 2012-08-27 | 2012-08-27 | LED chip eutectic bonding process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210308270.XA CN102832320B (en) | 2012-08-27 | 2012-08-27 | LED chip eutectic bonding process |
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| Publication Number | Publication Date |
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| CN102832320A true CN102832320A (en) | 2012-12-19 |
| CN102832320B CN102832320B (en) | 2015-01-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210308270.XA Active CN102832320B (en) | 2012-08-27 | 2012-08-27 | LED chip eutectic bonding process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280517A (en) * | 2013-06-05 | 2013-09-04 | 广州市鸿利光电股份有限公司 | Method for LED co-crystallizing technique |
| CN105118910A (en) * | 2015-08-06 | 2015-12-02 | 广州市鸿利光电股份有限公司 | LED solid crystal method, solid crystal glue and preparation method of the solid crystal glue |
| CN108167674A (en) * | 2018-01-30 | 2018-06-15 | 中国科学院工程热物理研究所 | The filament lamp of micron LED chip |
| CN110931395A (en) * | 2019-12-06 | 2020-03-27 | 马鞍山三投光电科技有限公司 | A kind of eutectic welding machine for LED chip solid crystal and its working method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008039573A1 (en) * | 2006-05-09 | 2008-04-03 | Semi-Photonics Co., Ltd. | Vertical led with eutectic layer |
| CN102593283A (en) * | 2012-03-01 | 2012-07-18 | 溧阳通亿能源科技有限公司 | High light-efficiency LED (light-emitting diode) packaging preparation method |
| CN102601477A (en) * | 2012-02-29 | 2012-07-25 | 深圳市因沃客科技有限公司 | Microwelding eutectic method for LED chips |
-
2012
- 2012-08-27 CN CN201210308270.XA patent/CN102832320B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008039573A1 (en) * | 2006-05-09 | 2008-04-03 | Semi-Photonics Co., Ltd. | Vertical led with eutectic layer |
| CN102601477A (en) * | 2012-02-29 | 2012-07-25 | 深圳市因沃客科技有限公司 | Microwelding eutectic method for LED chips |
| CN102593283A (en) * | 2012-03-01 | 2012-07-18 | 溧阳通亿能源科技有限公司 | High light-efficiency LED (light-emitting diode) packaging preparation method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280517A (en) * | 2013-06-05 | 2013-09-04 | 广州市鸿利光电股份有限公司 | Method for LED co-crystallizing technique |
| CN103280517B (en) * | 2013-06-05 | 2015-12-02 | 广州市鸿利光电股份有限公司 | A kind of LED eutectic technology method |
| CN105118910A (en) * | 2015-08-06 | 2015-12-02 | 广州市鸿利光电股份有限公司 | LED solid crystal method, solid crystal glue and preparation method of the solid crystal glue |
| CN105118910B (en) * | 2015-08-06 | 2019-02-19 | 鸿利智汇集团股份有限公司 | LED die-bonding method, die-bonding glue, and preparation method of die-bonding glue |
| CN108167674A (en) * | 2018-01-30 | 2018-06-15 | 中国科学院工程热物理研究所 | The filament lamp of micron LED chip |
| CN110931395A (en) * | 2019-12-06 | 2020-03-27 | 马鞍山三投光电科技有限公司 | A kind of eutectic welding machine for LED chip solid crystal and its working method |
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|---|---|
| CN102832320B (en) | 2015-01-28 |
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Effective date of registration: 20180214 Address after: 230000 Anhui city of Hefei province high tech Zone electromechanical Industrial Park Yang Lin Lu West C floor 4 Patentee after: Hefei inte energy saving Polytron Technologies Inc Address before: 230088 Anhui city of Hefei province high tech Zone electromechanical Industrial Park Road West Yang Patentee before: Hefei Yingte Electric Equipments Co., Ltd. |
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