CN102832123A - Power electric switch device and manufacturing method thereof - Google Patents
Power electric switch device and manufacturing method thereof Download PDFInfo
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- CN102832123A CN102832123A CN2011101584764A CN201110158476A CN102832123A CN 102832123 A CN102832123 A CN 102832123A CN 2011101584764 A CN2011101584764 A CN 2011101584764A CN 201110158476 A CN201110158476 A CN 201110158476A CN 102832123 A CN102832123 A CN 102832123A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003760 hair shine Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000004380 ashing Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 5
- 239000007772 electrode material Substances 0.000 abstract 2
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a manufacturing method of a high electron mobility transistor device, which comprises the following steps: (a) coating a layer of photoresist on one substrate; (b) drying the photoresist; (c) illuminating the photoresist by a beam of parallel light, wherein the parallel light beam is distributed on the cross section in the way that the light intensity in the central part is greater than that in the peripheral part; (d) developing the photoresist layer, so that a deep groove which is deep to the substrate is formed at a part of the photoresist layer, which is illuminated by the light beam central part, and a shallow groove which is shallower than the deep groove is formed at a part which is illuminated by the light beam peripheral part; (e) depositing a polycrystalline silicon gate electrode material on the photoresist layer by a chemical vapor deposition method, thereby forming a T-shaped gate electrode pattern in the deep groove and the shallow groove; and (f) removing the photoresist layer and the gate electrode material which is deposited outside the T-shaped gate electrode pattern by the plasma oxygen ashing process.
Description
Technical field
The present invention relates to a kind of HEMT (High Electron Mobility Transistor; Be HEMT) device and manufacture method; Particularly gate material is made up of conducting inorganic material, device and manufacturing approach thereof that T type gate electrode adopts photoresist of coating and single exposure photoetching process to accomplish.
Background technology
HEMT (HEMT) has fast, the withstand voltage height of speed, ends advantages such as high frequency is high, environmental stability is good.Along with the raising with frequency that reduces of device size, T type gate electrode structure is widely used in the HEMT device.
A kind of method of the T type gate electrode structure manufacture method of prior art is to adopt three layers of different photobehavior photoresist of coating and electron beam exposure method to form the first half 12, transition portion 13 and the latter half 11 of T type gate electrode, and Fig. 1 is the grid groove structural representation of this manufacture method.Plated metal grid again, the unwanted part of stripping photoresist and gate electrode forms T type gate electrode.
The another kind of method of prior art is to be coated with one deck photoresist earlier; Adopt the latter half 11 of the method making T type gate electrode of X ray; Then be coated with one deck photoresist, adopt optical lithography method to make the first half 12 of T type gate electrode, Fig. 2 is the grid groove structural representation of this manufacture method.Deposit the grid metal again, the unwanted part of stripping photoresist and gate electrode forms T type gate electrode.
Above-mentioned these methods need repeatedly be coated with photoresist; Increased processing step; And liquid flux and ultrasonic method that lift-off technology adopts be easy to have influence on T type gate electrode the first half in the process of peeling off T type gate electrode the latter half photoresist, and the HEMT device is in high pressure, high frequency, hot operation in addition, and the metal material of gate electrode is easy to be diffused into following semiconductor layer; Influence the performance of device, even lost efficacy.
Fig. 1 is the grid groove structural representation of first kind of manufacture method of prior art, and wherein 1 is substrate, and 11 is T type gate electrode the latter half, and 12 is T type gate electrode the first half, and 13 is T type gate electrode transition portion.These three parts are formed by three layer photoetching glue respectively.
Fig. 2 is the grid groove structural representation of second kind of manufacture method of prior art, and wherein 1 is substrate, and 11 is T type gate electrode the latter half, and 12 is T type gate electrode the first half.These two parts are formed by two layer photoetching glue respectively.
Summary of the invention
It is simple to the purpose of this invention is to provide a kind of manufacture craft, HEMT device and manufacturing approach that production efficiency is high.
Another object of the present invention provides a kind of HEMT device and manufacturing approach of stable work in work.
For realizing above-mentioned one or more purpose, the present invention provides a kind of manufacture method of HEMT devices, comprises the following steps:
(a) coating one deck photoresist on a substrate;
(b) dry this layer photoetching glue;
(c) with a branch of this layer photoetching glue of directional light irradiation, wherein this bundle directional light distribution on its cross section is: the light intensity of its core is greater than the light intensity of periphery;
(d) above-mentioned photoresist layer is given development treatment, photoresist layer receives deep trouth that is deep to substrate of position formation that said beam center partly shines thus, forms the shallow slot of a degree of depth less than said deep trouth and receive said light beam periphery irradiated site;
(e) with chemical vapor deposition method to said photoresist layer deposit spathic silicon gate material, in said deep trouth and shallow slot, form " T " shape gate electrode figure thus;
(f) utilize plasma oxygen cineration technics to remove above-mentioned photoresist layer and be deposited on the gate material outside said " T " shape gate electrode figure.
Of the present invention have a following beneficial effect:
In device of the present invention, gate material is made up of conducting inorganic material, and the metal material of having avoided in the existing technology constituting gate electrode is easy to be diffused into the shortcoming of following semiconductor conducting layer, has improved stability, the reliability of device work.
In manufacture method of the present invention, T type gate electrode adopts photoresist of coating and single exposure photoetching process to accomplish, and manufacture craft is simple, can reduce the unit interval of device preparation effectively, enhances productivity.
In manufacture method of the present invention, adopt oxygen ashing (O
2Ashing) method is removed photoresist and the unwanted part of gate electrode figure, can avoid liquid flux and ultrasonic method has influence on T type gate electrode the first half easily in the process of peeling off T type gate electrode the latter half photoresist the shortcoming of the lift-off technology employing of existing technology.Simultaneously, if oxygen ashing (O
2Ashing) in CVD that makes gate material or pvd chamber body, carry out, can reduce the unit interval of device preparation effectively, enhance productivity.
Description of drawings
Fig. 1 is the grid groove structural representation of first kind of manufacture method of prior art.
Fig. 2 is the grid groove structural representation of second kind of manufacture method of prior art.
Fig. 3 is the grid groove structural representation according to first kind of execution mode of the present invention.
Fig. 4 is the manufacture method sketch map according to second kind of execution mode of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present invention is described.
Execution mode one
The manufacture craft of substrate 1 comprises: the heterojunction of the method that adopts metal oxide chemical vapor deposition growing gallium nitride aluminium and gallium nitride on (0001) of sapphire substrate face; The heterojunction concrete structure from bottom to top is followed successively by: 2 microns undoped gallium nitride epitaxial loayers; 5 nanometer undoped gallium nitride aluminium separators; 12 nano-silicon doped gallium nitride aluminium laminations, 5 nanometer undoped gallium nitride aluminium cap layers.
Fig. 3 is the manufacture craft structure chart according to the HEMT device of a kind of execution mode of present embodiment.
The manufacturing process of the HEMT of present embodiment:
(101) coating one deck photoresist AZ1500 (being used to form the latter half 11 and the first half 12) on substrate 1, thickness is 3 microns, baking 50 seconds (i.e. oven dry) on hot plate.Adopt the semi-transparent part 21 of half transmitance reticle (Half tone mask); Through exposure and development; Make the first half 12 of T type gate electrode photoresist figure, make the latter half 11 of T type gate electrode photoresist figure simultaneously through the full impregnated light part 22 of above reticle, developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%; Developing time 30 seconds is seen Fig. 3 (1).
(102) Fig. 3 (2) is a grid groove structural representation, comprising: substrate 1, T type gate electrode the latter half 11, T type gate electrode the first half 12.
(103) make heavily doped polygate electrodes material 21 through chemical vapor deposition method; Because the first half 12 of T type gate electrode photoresist figure is an inverted trapezoidal structure; The heavily doped polysilicon gate material is discontinuous at the edge of this inverted trapezoidal structure, shown in Fig. 3 (3).
(104) under the situation of not destroying the chemical vapor depsotition equipment vacuum, aerating oxygen (O
2), utilize plasma to carry out oxygen ashing (O
2Ashing) technology is removed photoresist and the unwanted part of gate electrode figure, shown in Fig. 3 (4).
Execution mode two
The manufacture craft of substrate is with embodiment one.
(201) coating one deck photoresist AZ1500 (being used to form the latter half 11 and the first half 12) on substrate, thickness is 3 microns, baking is 50 seconds on hot plate.Adopt the semi-transparent part 21 of half transmitance reticle (Half tone mask); Make the first half 12 of T type gate electrode photoresist figure through the method for exposure and development; The first half 12 is an inverted trapezoidal structure, makes the latter half 11 of T type gate electrode photoresist figure simultaneously through the full impregnated light part 22 of above reticle, and developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%; Developing time 30 seconds is seen Fig. 3 (1).
(202) Fig. 3 (2) is a grid groove structural representation, comprising: substrate 1, T type gate electrode the latter half 11, T type gate electrode the first half 12.
(203) make zinc oxide (ZnO) gate material 21 through sputter (Sputter) technology; Because the first half 12 of T type gate electrode photoresist figure is an inverted trapezoidal structure; The zinc oxide gate material is discontinuous at the edge of this inverted trapezoidal structure, shown in Fig. 3 (3).
(204) under the situation of not destroying Sputter equipment vacuum, aerating oxygen (O
2), utilize plasma to carry out oxygen ashing (O
2Ashing) technology is removed photoresist and the unwanted part of gate electrode figure, shown in Fig. 3 (4).
Execution mode three
The manufacture craft of substrate is with embodiment one.
(301) coating one deck photoresist AZ1500 (being used to form the latter half 11 and the first half 12) on substrate, thickness is 3 microns, baking is 50 seconds on hot plate.Adopt the cut blocks for printing interference fringe gray scale part 21 of (Gray tone mask) of interference fringe gray-level light; Make the first half 12 of T type gate electrode photoresist figure through the method for photoetching and development; The first half 12 is an inverted trapezoidal structure, makes the latter half 11 of T type gate electrode photoresist figure simultaneously through the full impregnated light part 22 of above reticle, and developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%; Developing time 30 seconds is seen Fig. 4 (1).
(302) Fig. 4 (2) is a grid groove structural representation, comprising: substrate 1, T type gate electrode the latter half 11, T type gate electrode the first half 12.
(303) make zinc oxide (ZnO) gate material 21 through sputter (Sputter) skill; Because the first half 12 of T type gate electrode photoresist figure is an inverted trapezoidal structure; The zinc oxide gate material is discontinuous at the edge of this inverted trapezoidal structure, shown in Fig. 4 (3).
(304) under the situation of not destroying Sputter equipment vacuum, aerating oxygen (O
2), utilize plasma to carry out oxygen ashing (O
2Ashing) technology is removed photoresist and the unwanted part of gate electrode figure, shown in Fig. 4 (4).
Embodiment four
The manufacture craft of substrate is with embodiment one.
(401) coating one deck photoresist AZ1500 (being used to form the latter half 11 and the first half 12) on substrate, thickness is 3 microns, baking is 50 seconds on hot plate.Adopt the cut blocks for printing interference fringe gray scale part 21 of (Gray tone mask) of interference fringe gray-level light; Make the first half 12 of T type gate electrode photoresist figure through the method for photoetching and development; Make the latter half 11 of T type gate electrode photoresist figure simultaneously through the full impregnated light part 22 of above reticle; Developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%, and developing time 30 seconds is seen Fig. 4 (1).
(402) Fig. 4 (2) is a grid groove structural representation, comprising: substrate 1, T type gate electrode the latter half 11, T type gate electrode the first half 12.
(403) make heavily doped polygate electrodes material 21 through chemical vapor deposition method, because the first half 12 of T type gate electrode photoresist figure is an inverted trapezoidal structure, the heavily doped polysilicon gate material is discontinuous at the edge of this inverted trapezoidal structure.
The device that (404) will deposit gate material is immersed in the stripper, removes unwanted metal and all photoresists, and stripper is the N-methyl pyrrolidone, adopts acetone and ethanol to clean afterwards.
Embodiment five
The manufacture craft of substrate is with embodiment one.
(501) coating one deck photoresist AZ1500 (being used to form the latter half 11 and the first half 12) on substrate, thickness is 3 microns, baking is 50 seconds on hot plate.Adopt the cut blocks for printing interference fringe gray scale part 21 of (Gray tone mask) of interference fringe gray-level light; Make the first half 12 of T type gate electrode photoresist figure through the method for photoetching and development; Make the latter half 11 of T type gate electrode photoresist figure simultaneously through the full impregnated light part 22 of above reticle; Developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%, and developing time 30 seconds is seen Fig. 4 (1).
(502) Fig. 4 (2) is a grid groove structural representation, comprising: substrate 1, T type gate electrode the latter half 11, T type gate electrode the first half 12.
(503) make the gate material 21 of heavily doped nickel and golden double-level-metal (thickness is respectively 30 nanometers and 200 nanometers) through chemical vapor deposition method, shown in Fig. 4 (3).
The device that (504) will deposit gate material is immersed in the stripper, removes unwanted metal and all photoresists, and stripper is the N-methyl pyrrolidone, adopts acetone and ethanol to clean afterwards, shown in Fig. 4 (3).
Through said embodiment and accompanying drawing, generally speaking, the present invention provides a kind of manufacture method of HEMT devices, comprises the following steps:
(a) coating one deck photoresist (for example, photoresist AZ1500) on a substrate;
(b) dry this layer photoetching glue (for example through 50 seconds time of baking);
(c) with a branch of this layer photoetching glue of directional light irradiation, wherein this bundle directional light distribution on its cross section is: the light intensity of its core is greater than the light intensity of periphery;
(d) above-mentioned photoresist layer (is for example given development treatment; Developer solution is the tetramethyl-ammonium hydroxide solution of concentration 2.38%; Developing time 30 seconds); Photoresist layer receives deep trouth that is deep to substrate of position formation that said beam center partly shines thus, forms the shallow slot of a degree of depth less than said deep trouth and receive said light beam periphery irradiated site;
(e) with chemical vapor deposition method to said photoresist layer deposit spathic silicon gate material, like tin oxide (In
2O
3), antimony oxide (SbO), zinc oxide (ZnO), (GaO) etc. sowed in oxidation, and the oxide of above-mentioned alloy such as tin indium oxide (ITO), indium oxide are sowed zinc (IGZO) etc., inorganic conductive materials such as heavily doped polysilicon, germanium.In said deep trouth and shallow slot, form " T " shape gate electrode figure thus; With
(f) utilize plasma oxygen cineration technics to remove above-mentioned photoresist layer and be deposited on the gate material outside said " T " shape gate electrode figure.
Best, the intensity distributions of said collimated light beam is through the realization of cutting blocks for printing of semi-transparent rate photolithography plate or interference fringe gray-level light.
More than be described to preferred implementation of the present invention, it should be appreciated by those skilled in the art that not breaking away from the scope basis of spirit of the present invention and claims and can carry out variations and modifications.
Claims (3)
1. the manufacture method of a HEMT devices comprises the following steps:
(a) coating one deck photoresist on a substrate;
(b) dry this layer photoetching glue;
(c) with a branch of this layer photoetching glue of directional light irradiation, wherein this bundle directional light distribution on its cross section is: the light intensity of its core is greater than the light intensity of periphery;
(d) above-mentioned photoresist layer is given development treatment, photoresist layer receives deep trouth that is deep to substrate of position formation that said beam center partly shines thus, forms the shallow slot of a degree of depth less than said deep trouth and receive said light beam periphery irradiated site;
(e) with chemical vapor deposition method to said photoresist layer deposit spathic silicon gate material, in said deep trouth and shallow slot, form " T " shape gate electrode figure thus;
(f) utilize plasma oxygen cineration technics to remove above-mentioned photoresist layer and be deposited on the gate material outside said " T " shape gate electrode figure.
2. method as claimed in claim 1 is characterized in that, said gate material comprises: conducting metal oxide, and like tin oxide (In
2O
3), antimony oxide (SbO), zinc oxide (ZnO), (GaO) etc. sowed in oxidation, and the oxide of above-mentioned alloy such as tin indium oxide (ITO), indium oxide are sowed zinc (IGZO) etc., inorganic conductive materials such as heavily doped polysilicon, germanium.
3. like the method for claim 1 or 2, it is characterized in that the intensity distributions of said collimated light beam is through the realization of cutting blocks for printing of semi-transparent rate reticle or interference fringe gray-level light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101584764A CN102832123A (en) | 2011-06-14 | 2011-06-14 | Power electric switch device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101584764A CN102832123A (en) | 2011-06-14 | 2011-06-14 | Power electric switch device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102832123A true CN102832123A (en) | 2012-12-19 |
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ID=47335199
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|---|---|---|---|
| CN2011101584764A Pending CN102832123A (en) | 2011-06-14 | 2011-06-14 | Power electric switch device and manufacturing method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543253A (en) * | 1994-08-08 | 1996-08-06 | Electronics & Telecommunications Research Inst. | Photomask for t-gate formation and process for fabricating the same |
| CN1700418A (en) * | 2004-05-19 | 2005-11-23 | 上海宏力半导体制造有限公司 | Method for manufacturing T-shaped polysilicon gate using dual damascene process |
| CN101330010A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | A method of making T-type HBT emitter/HEMT grid |
-
2011
- 2011-06-14 CN CN2011101584764A patent/CN102832123A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543253A (en) * | 1994-08-08 | 1996-08-06 | Electronics & Telecommunications Research Inst. | Photomask for t-gate formation and process for fabricating the same |
| CN1700418A (en) * | 2004-05-19 | 2005-11-23 | 上海宏力半导体制造有限公司 | Method for manufacturing T-shaped polysilicon gate using dual damascene process |
| CN101330010A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | A method of making T-type HBT emitter/HEMT grid |
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Application publication date: 20121219 |