CN102830457B - Color filter substrate - Google Patents

Abstract

The invention provides a color filter substrate, which can effectively reduce the phenomenon of oblique color cast under the condition of meeting the requirements of high resolution and high color saturation. The color filter substrate is provided with a plurality of color light resistors, adjacent color light resistors are contacted with each other, the plurality of color light resistors are designed into a cambered surface shape, namely the upper surface of each color light resistor is in an arc shape, and the black matrix is positioned between the adjacent color light resistors, covers part of the color light resistors and is positioned on the edge part of the color light resistors. When the color filter substrate is manufactured, a plurality of color light resistances are firstly formed on the substrate, then a black matrix is formed between the color light resistances and on the edge part of the color light resistances, and then a flat layer is formed on the color light resistances and the black matrix.

Description

A color filter substrate

【Technical field】

The invention relates to a color filter substrate, in particular to a thin color filter substrate capable of effectively reducing oblique color shift phenomenon under the condition of high resolution and high color saturation.

【Background technique】

Color filter substrates are widely used in display devices. In the general process of color filter substrates, firstly, a black matrix is set on the substrate, and then a plurality of color photoresists are set on the black matrix and the substrate, and then the colored light A flat layer is provided on the resistive upper layer. Among them, there are three kinds of color photoresists, which can pass through three different colors of light, such as red, green, and blue light. Among them, the black matrix is located between adjacent color photoresists, which mainly plays the role of blocking stray light and preventing color mixing.

As shown in FIG. 1 , it is a cross-sectional view of a color filter substrate 100 in the prior art. In the prior art, the black matrix 120 is located on the substrate 110; the color photoresist 130, including the first color photoresist 131, the second color photoresist 132 and the third color photoresist 133, is located between the black matrix 120 and is located on the substrate 110 and the black matrix 120; the flat layer 140 is located above the color photoresist 130. When forming the first color photoresist 131, the second color photoresist 132, and the third color photoresist 133 in sequence, if the color photoresist 130 has a climbing phenomenon above the black matrix 120, that is, the adjacent color photoresist 131 is on the black matrix 120. A part of the overlapping protrusion 134 is formed above the matrix 120. The overlapping protrusion 134 is a protrusion, which will cause insufficient flatness of the subsequently formed flat layer 140, so that the flat layer needs to be enlarged to achieve a certain flatness. 140 thickness.

Meanwhile, the color filter substrate shown in FIG. 1 is prone to the problem of oblique color shift. FIG. 2 is a schematic diagram of the oblique color shift phenomenon produced by the color filter substrate in the prior art. Because in the prior art, the black matrix 120 is located on the substrate 110 , the color photoresist 130 is located between the black matrix 120 and on the substrate 110 and the black matrix 120 . The middle portion 135 of the upper surface of the color photoresist 130 after removing the overlapping protrusions 134 is flat, that is, the middle portion 135 is parallel to the interface between the color photoresist 130 and the substrate 110 . When the viewer observes the light transmitted from the color photoresist 130 through the color filter substrate 100, the viewer can look upright (the line of sight is perpendicular to the substrate 110) and squint (the line of sight forms a certain angle with the substrate 110, such as greater than 0° and less than 90°) °) When displaying the display, the optical path of the light passing through the color photoresist 130 from the display is different. The optical path of the light when squinting is generally greater than that of the light when looking squarely, that is, when the observer looks squarely and squints at the display , will produce optical path difference, resulting in oblique color shift phenomenon. At present, the color saturation of the display panel can be improved by increasing the film thickness of the color photoresist, but the larger the film thickness of the color photoresist, the more prone to oblique color shift. In this way, even though the high film thickness of the color photoresist can improve the color saturation, it is still impossible to design the high film thickness of the color photoresist.

【Content of invention】

The invention provides a color filter substrate, which can reduce the problem of oblique color shift while satisfying high resolution and high color saturation.

The present invention provides a color filter substrate, the color filter substrate includes a plurality of color photoresist located on the substrate, the plurality of color photoresist has a curved surface shape; a black matrix located in the adjacent color photoresist between and on the edge of the color photoresist; a flat layer is on the color photoresist and the black matrix.

According to the present invention, a plurality of color photoresist is firstly formed on the substrate, the color photoresist has an arc shape, the lower surface of the color photoresist is attached to the substrate, the upper surface of the color photoresist is arc-shaped, That is, the arc of the upper surface of the color photoresist is an upwardly convex arc, the color photoresist has an edge portion, and adjacent color photoresists are in contact with each other, and there is a concave portion between adjacent color photoresists. The black matrix is located in the recessed part between adjacent color photoresist and covers part of the color photoresist, that is, the black matrix is located on the edge of the color photoresist, so that the adjacent color photoresist produces protrusions due to the overlap of the edge. It will be covered by the black matrix after forming the black matrix, and will not directly affect the flatness of the subsequent flat layer, that is, the thickness of the flat layer can be reduced while ensuring that the flat layer has better flatness, thereby Form thinner color filter substrates.

According to the present invention, the color photoresist has an arc shape, and the upper surface of the color photoresist is an arc, that is, the arc of the upper surface of the color photoresist is an upwardly convex arc, and the upper surface of the color photoresist is curved. The radius of curvature is small, the radius of curvature of the upper surface of the color photoresist is smaller than the length of the lower surface of the color photoresist, even if the center of curvature of the upper surface of the color photoresist is located near the lower surface of the color photoresist, the best, the color photoresist The center of curvature of the upper surface of the photoresist is exactly located at the lower surface of the color photoresist. In this way, when the observer looks straight and obliquely at the display, the path of the light transmitted from the color filter substrate when passing through the color photoresist is similar or the same, that is, the light passes through The optical path of the color photoresist is similar or the same, which can reduce or eliminate the oblique color shift.

According to the present invention, since the color photoresist has an arc shape and the upper surface of the color photoresist is arc-shaped, the color saturation of the color photoresist can be improved by properly increasing the thickness of the color photoresist. At the same time, because the color photoresist has a curved shape, the black matrix is located in the concave part between adjacent color photoresists and on the edge of the color photoresist, that is, the black matrix is arranged along the edge of the color photoresist. In this way, under the condition of ensuring the visible range, it can effectively save space and produce a smaller size and more color photoresists, so as to produce a color filter substrate that meets the high-resolution requirements.

The invention provides a method for manufacturing a color filter substrate. Firstly, a substrate is provided, and a first color-resist material is formed on the substrate; a photomask is arranged above the first color-resist material; The color resist material is exposed, and the exposure method adopted is weak exposure; the first color resist material is etched; after the etching is completed, the first color photoresist is formed, and the first color photoresist has an arc shape; then, sequentially A second color photoresist and a third color photoresist are formed on the substrate, so that a plurality of color photoresists are formed on the entire substrate, the plurality of color photoresists all have an arc shape, and the upper surface of the color photoresist is an arc shape, the radius of curvature of the upper surface is small, the radius of curvature of the upper surface of the color photoresist is smaller than the length of the lower surface of the color photoresist, that is, the center of curvature of the upper surface of the color photoresist is located on the lower surface of the color photoresist Nearby, preferably, the center of curvature of the upper surface of the color photoresist is just at the lower surface of the color photoresist, and the adjacent color photoresists are in contact with each other, and a concave part will be formed between the adjacent color photoresists; then A black matrix is formed on the color photoresist, the black matrix is located in the recessed part between adjacent color photoresists and covers part of the color photoresist, and is located on the edge of the color photoresist; finally a black matrix is formed above the color photoresist and the black matrix flat layer.

A method for manufacturing the above-mentioned color filter substrate is to use a color-resist material to make a color photoresist. When the film thickness of the color photoresist is increased to meet the requirements of high color saturation, the light transmittance of the color photoresist In order to solve the problem of lower light transmittance of color photoresists under high color saturation, color resist materials with smaller color molecules (paste molecules) are used.

A method for manufacturing the above-mentioned color filter substrate is to use a color-resist material to make a color photoresist, and the color-resist material is a color-resist material with low sensitivity.

A method for manufacturing the above-mentioned color filter substrate is to place a photomask with an opening and a light-shielding portion above the color-resist material, reduce the intensity of exposure light, and weakly expose the color-resist material. The sensitivity of the color resist material is low, the fully photosensitive part of the color resist material is retained in the subsequent etching process, the unphotosensitive part is etched away during the etching process, and the weak photosensitive part is partially etched away during the etching process while partially preserved.

【Description of drawings】

FIG. 1 is a cross-sectional view of a color filter substrate in the prior art.

FIG. 2 is a schematic diagram of the oblique color shift phenomenon produced by the color filter substrate in the prior art.

FIG. 3 is a cross-sectional view of a color filter substrate in the present invention.

4a and 4b are cross-sectional views of specific shapes of a single color photoresist.

5, 6a, 6b are schematic diagrams of the color filter substrate improving oblique color shift in the present invention.

7 to 10 are flowcharts of manufacturing the color filter substrate in the present invention.

FIG. 11 is a schematic diagram of the exposure process for making the color photoresist and realizing the arc shape of the color photoresist in the present invention.

【Detailed ways】

FIG. 3 is a cross-sectional view of a color filter substrate in the present invention. As shown in FIG. 3 , the color filter substrate 200 in the present invention includes a substrate 210, wherein the substrate 210 is made of a light-transmitting material; a color photoresist 230 is arranged on the substrate 210, wherein, The color photoresist 230 has an arc shape, its lower surface 202 is in contact with the substrate 210, and its upper surface 201 is arc-shaped. The color photoresist 230 has an edge portion 204, and the adjacent color photoresist 230 is mutually Contact, a recessed portion 203 is formed between adjacent color photoresists 230; a black matrix 220 is arranged between two adjacent color photoresists 230, that is, the black matrix 220 is arranged between adjacent color photoresists 230 The formed concave portion 203 ; a flat layer 240 is disposed above the color photoresist 230 and the black matrix 220 .

Wherein, the above-mentioned color photoresist 230 further includes a first color photoresist 231, a second color photoresist 232, and a third color photoresist 233, which are disposed on the substrate 210 and arranged alternately in sequence. As an example, but not limited to three kinds of color photoresist, for example: four color photoresist of R (red), green (G), blue (B), white (W) or other combination of color photoresist can also be used. The three color photoresists are made of three different color resist materials (such as resin materials), which can filter the incident light through different color photoresists to filter out light of different wavelengths, such as Red, green, blue light, etc., wherein the color photoresist 230 is designed to have a curved shape, its lower surface 202 is in contact with and bonded to the substrate 210, and its upper surface 201 is an arc, that is, the color photoresist 230 The arc of the upper surface 201 is an upwardly convex arc, as shown in Figures 4a and 4b, which are cross-sectional views of the specific shape of a single color photoresist 230. The radius of curvature R of the upper surface 201 of the color photoresist 230 is relatively small, and the curvature The radius R is less than the length H of the lower surface 202 of the color photoresist 230, that is, the center of curvature O of the upper surface 201 is located near the lower surface 202 of the color photoresist 230, the closer the center of curvature O is to the lower surface 202, the better, and the best Preferably, the radius of curvature R of the upper surface 201 of the color photoresist 230 is equal to half of the length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is just located at the lower surface 202, even if the color photoresist 230 is A hemisphere, the radius of curvature R of the upper surface 201 of the color photoresist 230 in FIG. The radius of curvature R of the upper surface 201 of the resistance 230 is equal to half of the length H of the lower surface 202 (the center of curvature O of the upper surface 201 is just located at the lower surface 202), of course, this is between the upper surface 201 of the color photoresist 230 The condition that the arc is a standard arc (with a radius of curvature) needs to be satisfied, and in many cases, the arc of the upper surface 201 of the color photoresist 230 can also be a non-standard arc (with a radius of curvature). Multiple radii of curvature, such as an elliptical arc or arc formed by other continuous curves), at this time, the radii of curvature of the non-standard arc can also be set to be smaller than the color photoresist 230 The length of 202 of the surface, or at least the center of curvature of a section of arc in the center of the non-standard arc is set near the lower surface 202 of the color photoresist 230, so that it can be achieved by appropriately increasing the film thickness of the color photoresist 230 Improve the color saturation of the color photoresist 230. At this time, due to the increase of the film thickness of the color photoresist 230, its light transmittance will be affected by the increase of the film thickness and decrease. In order to solve the problem of low efficiency, the color photoresist 230 uses a color resist material with small color molecules (paste molecules), that is, the light transmittance of the color photoresist 230 will not be affected when the film thickness of the color photoresist 230 is increased. Since the upper surface 201 of the color photoresist 230 is arc-shaped, the first color photoresist 231, the second color photoresist 232 and the third color photoresist 233 are arranged alternately in sequence when they are arranged on the substrate 210. , and the adjacent color photoresists 230 are in contact with each other, so a concave portion 203 is formed between the adjacent color photoresists 230 .

Continuing from the above, wherein the black matrix 220 is arranged in the recessed portion 203 formed between adjacent color photoresists 230 and covers part of the color photoresist 230, and is located on the edge portion 204 of the color photoresist 230, due to the black The matrix 220 is located in the recessed portion 203 between adjacent color photoresists 230, which can effectively save space and expand the visible range of the color photoresist 230, that is, the black matrix 220 follows the edge 204 of the color photoresist 230 And set, and this upper surface 201 is an arc shape, makes the visible range of the bottom of its color photoresist 230 expand, so just can reduce the size of color photoresist 230 under the situation of ensuring the same size visible range and make A greater number of color photoresists 230 enables the color filter substrate 200 to meet the requirement of high resolution. Wherein the black matrix 220 is an opaque material, and the opaque material at least blocks visible light.

The flat layer 240 is located above the color photoresist 230 and the black matrix 220, and the flat layer 240 is a transparent insulating material. Usually, when the color photoresist 230 is formed, a part of the overlapping area is formed between the adjacent color photoresist 230, but in the present invention, even if a part of the overlapping area is formed between the adjacent color photoresist 230, However, the overlapping area will be covered by the black matrix 220 at first, and will not directly affect the formation of the subsequent flat layer, that is, in the present invention, the overlapping protrusions as shown in FIG. 1 will not be generated before the flat layer is formed ( As shown in Fig. 1, overlapping protrusions 134 need to form a thicker flat layer 140 to make the flatness of the flat layer 140 better.) In this way, it is possible to ensure that the flat layer 240 has better flatness. The thickness of the formed flat layer 240 is reduced, thereby reducing the thickness of the formed color filter substrate 200 .

As shown in FIGS. 5, 6a and 6b, they are schematic diagrams of improving oblique color shift by the color filter substrate in the present invention. As shown in Figure 5, the color photoresist 230 on the color filter substrate 200 of the present invention is located on the substrate 210, because each color photoresist 230 includes a first color photoresist 231, a second color photoresist 232 and The third color photoresist 233 has an arc shape on its upper surface 201, that is, the upper surface 201 of the color photoresist 230 is an upwardly convex arc shape, and the curvature radius R of the upper surface 201 is relatively small, and the curvature radius R is less than The length H of the lower surface 202 of the color photoresist 230, even if the center of curvature O of the upper surface 201 is located near the lower surface 202 of the color photoresist 230, the closer the center of curvature O is to the lower surface 202, the better, the best, The radius of curvature R of the upper surface 201 of the color photoresist 230 is equal to half the length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is just located at the lower surface 202, even if the color photoresist 230 is a hemisphere, In this way, when the observer looks straight (the line of sight is perpendicular to the substrate 210) and squints (the line of sight is at a certain angle to the substrate 210, such as greater than 0° and less than 90°) the display, the light transmitted from the color filter substrate 200 passes through the colored light The distances of the resistance 230 are L1 and L2 respectively (generally, the size of the color photoresist 230 is on the order of microns, no matter looking straight up or squinting at the display, most of the light received by the human eye through the color photoresist 230 will pass through the color photoresist 230 Near the center point of the lower surface 202 of the photoresist 230), L1 and L2 are similar or the same, and optimally, the distances L1 and L2 have the same size and are the size of the radius of curvature R of the upper surface 201 of the color photoresist 230, such as As shown in Figure 6a, the radius of curvature of the upper surface 201 of the color photoresist 230 is less than the length H of the lower surface 202 and greater than 1/2H (the center of curvature O of the upper surface 201 is located near the lower surface 202), when the display is viewed frontally and obliquely , the distances L1 and L2 of light passing through the color photoresist 230 are similar in size. As shown in FIG. The center is just at the lower surface 202), when the display is viewed frontally and obliquely, the distances L1 and L2 of the light passing through the color photoresist 230 are equal in size and equal to the radius of curvature R of the upper surface 201, so, from the color filter substrate 200 The optical path of the transmitted light passing through the color photoresist 230 is similar or the same, that is, the optical path difference generated by the observer is small or does not occur when the observer looks straight or obliquely at the display. Therefore, the color filter substrate 200 can effectively improve oblique color shift.

7 to 10 are flow charts of manufacturing a color filter substrate in the present invention. As shown in FIG. 7 , firstly, a substrate 210 is provided, and the substrate 210 is made of a transparent material that can transmit visible light. Then a layer of first color resist material 250 is formed on the substrate 210, the first color resist material 250 is a negative photoresist, wherein the first color resist material 250 is a color resist material with lower sensitivity, that is, the first color resist material The first color-resist material 250 is mainly less sensitive to light, that is, the light intensity needs to reach a certain value before the first color-resist material 250 can fully respond. Small or less responsive or slower to respond.

Continue to the next step, please refer to Figure 8 and Figure 11 at the same time. As shown in FIG. 8 , a photomask 900 is arranged above the first color-resist material 250. The photomask 900 has an opening 901 and a light-shielding portion 903. The opening 901 allows light to pass through, and the light-shielding portion 903 does not allow light to pass through. pass. Next, the first color-resist material 250 is exposed through the photomask 900. The exposure method is to use weak exposure, that is, the intensity of exposure is relatively weak, and the first color-resist material 250 is a color-resist material with a lower sensitivity, that is, The first color-resist material 250 is less sensitive to light. During the weak exposure process, the part of the first color-resist material 250 whose received light intensity does not reach a certain intensity will have a lower reactivity. small or unable to fully react or react slowly, and the part of the first color resist material 250 that receives a certain intensity of light can fully react. At this time, please refer to FIG. 11 at the same time. The first color-resist material 250 directly under the center of the opening 901 of the photomask 900 receives the strongest light intensity and becomes the fully photosensitive part 251 , and the first color-resist material below the junction of the opening 901 and the light-shielding part 903 of the photomask 900 The light intensity received by 250 is small and becomes the weakly photosensitive part 252 , while the first color resist material 250 under the light shielding part 903 of the mask 900 does not receive light and becomes the non-photosensitive part 253 .

Subsequently, the first color resist material 250 after weak exposure is etched, wherein the fully photosensitive part 251 is completely retained, the unphotosensitive part 253 is completely etched away, and the weakly photosensitive part 252 is partially etched and partially retained down. After the etching is completed, a plurality of first color photoresists 231 are formed, as shown in FIG. The upper surface 201 of the color photoresist 231 is an arc, and the arc is an upwardly convex arc. The radius of curvature R of the upper surface 201 of the first color photoresist 231 is relatively small, and the radius of curvature R is smaller than that of the color photoresist. 231 The length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is located near the lower surface 202 of the first color photoresist 231, the closer the center of curvature O is to the lower surface 202, the better, and the best, the The radius of curvature of the upper surface 201 of the color photoresist 231 is equal to half of the length H of the lower surface 202, that is, the center of curvature O of the upper surface 201 is exactly located at the lower surface 202, even though the color photoresist 231 is a hemisphere. Subsequently, a plurality of second color photoresists 232 and a plurality of third color photoresists 233 are successively formed on the substrate 210 by the same method, and the second color photoresists 232 and the third color photoresists 233 are also in an arc shape , that is, the upper surface 201 of the second color photoresist 232 and the third color photoresist 233 is an arc, the arc is an upwardly convex arc, the radius of curvature R of the upper surface 201 is relatively small, and the radius of curvature R Less than the length H of the lower surface 202 of the color photoresist 230, that is, the center of curvature O of the upper surface 201 is located near the lower surface 202 of the second color photoresist 232 and the third color photoresist 233, preferably, the center of curvature O is just located on the lower surface 202 , and the shape and size of the first color photoresist 231 , the second color photoresist 232 and the third color photoresist 233 are the same. In the present invention, the color resist materials used in the color photoresist 230 are all negative photoresist as an example to explain the present invention, but it is not limited to the use of negative photoresist. If a positive photoresist is used, a person skilled in the art can also use a similar Principle implementation. The first color photoresist 231 , the second color photoresist 232 and the third color photoresist 233 use different color resist materials, and the three color photoresist can respectively filter the incident light into light of different wavelength bands. The first color photoresist 231, the second color photoresist 232 and the third color photoresist 233 are alternately arranged in sequence on the substrate 210, and adjacent color photoresist 230 are in contact with each other. The color photoresists 230 are filled, and a concave portion 203 is formed between adjacent color photoresists 230 .

As shown in FIG. 10 , subsequently, a black matrix 220 is formed on the color filter substrate 200. The black matrix 220 is located in the recessed portion 203 between adjacent color photoresists 230 and covers part of the color photoresist 230, and is located in the color photoresist. Above the edge portion 204 of the resist 230, the black matrix 220 can prevent color mixing between different color resists 230 and block stray light at the same time. The black matrix 220 is made of opaque material, which can be metal material or other opaque materials. Next, a flat layer 240 is formed on the color photoresist 230 and the black matrix 220, and the flat layer 240 is made of a transparent insulating material, such as silicon nitride.

As shown in FIG. 11 , it is a principle diagram of the exposure process of making the color photoresist in the present invention and realizing the arc shape of the color photoresist. The present invention takes the color resist material adopted in the color photoresist (color filter) as an example to explain the principle of the present invention to realize the arc shape of the color photoresist. Of course, when the color resist material used in the color photoresist is When the photoresist is positive, it can also be explained by the same basic principle and idea. In the present invention, when exposing the color resist material, the exposure method is to use weak exposure, that is, the intensity of exposure is relatively weak. Taking the exposure and etching of the first color resist material 250 to form the first color photoresist 231 as an example, the principle of forming the second color photoresist 232 and the third color photoresist 233 is the same. Weak light is irradiated on the first color resist material 250 through the opening 901 of the mask 900, and diffraction occurs when the light passes through the opening 901. The range of light is shown by the long dotted line in FIG. The light intensity received by the material 250 is not uniform, and the distribution of the light intensity received by the first color-resist material 250 is shown as a dotted line in FIG. 11 , where the vertical axis Y indicates the light intensity. It can be seen from FIG. 11 that the light intensity is the largest at the center of the opening 901 , and the light intensity decreases toward the side. At the same time, because the sensitivity of the first color-resist material 250 is low, the light intensity must reach a certain value before the first color-resist material 250 can fully react. was preserved. Since the light intensity is the highest at the center of the opening 901 , the part of the first color-resist material 250 directly below the center of the opening 901 can be fully sensitive to light and react fully, and this part becomes the fully photosensitive part 251 . The part of the first color-resist material 250 located below the junction of the opening 901 and the light-shielding part 903 of the mask 900 is weakly sensitive to light. The first color-resist material 250 located under the light-shielding portion 903 of the mask 900 is not sensitive to light and cannot react, and this portion becomes the unsensitized portion 253 . Therefore, in the subsequent etching process, the fully photosensitive part 251 is completely retained in the etching process due to the strongest light intensity received during exposure and fully reacts, and because the sensitivity of the color resist material 250 is low, When the light intensity received by the weakly photosensitive part 252 is relatively weak, the weakly photosensitive part 252 reacts insufficiently and is partially retained and partially etched away during the etching process, while the non-photosensitive part 253 does not receive light when it is exposed. , there is no reaction, and is completely etched away during the etching process to form a first color photoresist 231 with an arc shape, as shown by the dotted line in FIG. 11 . After the color photoresist 231 is formed, the same principle is used to sequentially form the color photoresist 232 and the color photoresist 233 on the substrate 210 , and adjacent color photoresist 230 are in contact with each other.

Although the present invention has disclosed a specific embodiment, it is not intended to limit the present invention. Any person skilled in the art may make equivalent structure or step replacements without departing from the concept and scope of the present invention, or follow the present invention. The equivalent changes and modifications made in the protection scope of the invention patent shall still fall within the scope of this patent.

Claims (18)

1. A color filter substrate, comprising: a substrate; A plurality of color photoresists, which are located on the substrate and include an upper surface and a lower surface, the lower surface is in contact with the substrate, the upper surface is arc-shaped, and the end of the arc-shaped edge of the upper surface is in contact with the lower surface , and adjacent color photoresists are in contact with each other; a black matrix, located on the curved edges of the upper surfaces of two adjacent color photoresists; and a flat layer located on the color photoresist and the black matrix. 2. The color filter substrate as claimed in claim 1, wherein the arc shape of the upper surface of each color photoresist is an upwardly convex arc shape. 3. The color filter substrate as claimed in claim 2, the arc of the upper surface of the color photoresist is a standard arc, that is, the arc has a radius of curvature which is smaller than that of the lower surface of the color photoresist. The length of the surface, that is, the center of curvature of the upper surface of the color photoresist is located near the lower surface of the color photoresist. 4. The color filter substrate as claimed in claim 2, the arc of the upper surface of the color photoresist is a standard arc, that is, the arc has a radius of curvature, and the radius of curvature is Half of the surface length, that is, the center of curvature of the upper surface of the color photoresist is located exactly at the lower surface of the color photoresist. 5. The color filter substrate as claimed in claim 2, the arc of the upper surface of the color photoresist is a non-standard arc, that is, the arc has a plurality of radii of curvature, and the plurality of radii of curvature are all less than the length of the lower surface of the color photoresist. 6. The color filter substrate as claimed in claim 2, the arc of the upper surface of the color photoresist is a non-standard arc, that is, the arc has a plurality of radii of curvature, wherein at least one of the radii of curvature corresponds to The center of curvature of is located at the lower surface of the color photoresist. 7. The color filter substrate as claimed in claim 1, wherein a concave portion is formed between adjacent color photoresists. 8. The color filter substrate as claimed in claim 7, wherein the black matrix is located in a concave portion between adjacent color photoresists. 9. A method of manufacturing a color filter substrate comprising: providing a substrate; forming a layer of color resist material on the substrate; setting a photomask above the color resist material; Expose the color resist material through the mask, and the exposure method is weak exposure; Etching and developing the color resist material, patterning the color resist material to form a plurality of color photoresists, and adjacent color photoresists are in contact with each other; The lower surface of the color photoresist is in contact with the substrate, the upper surface is arc-shaped, the arc-shaped edge end of the upper surface is in contact with the lower surface, and adjacent color photoresists are in contact with each other; forming a black matrix on the curved edges of the upper surfaces of two adjacent color photoresists; A planarization layer is formed over the color photoresist and black matrix. 10. The method for manufacturing a color filter substrate as claimed in claim 9, wherein the color-resist material is a color-resist material with smaller color molecules, so that the color-resist material has better light transmittance. 11. The method for manufacturing a color filter substrate as claimed in claim 9, wherein the color-resist material is a color-resist material with low sensitivity. 12. The method of manufacturing a color filter substrate as claimed in claim 9, wherein the mask has a light shielding portion and an opening portion. 13. The method for manufacturing a color filter substrate as claimed in claim 9, after patterning the color-resist material, the color-resist material has an arc shape, that is, the upper surface of the color-resist material is arc-shaped. 14. The method for manufacturing a color filter substrate according to claim 13, after patterning the color resist material, the color photoresist is formed, and the color photoresist has an arc shape, that is, the color photoresist The upper surface is an arc. 15. The method for manufacturing a color filter substrate as claimed in claim 14, the arc of the upper surface of the color photoresist is a standard arc, that is, the arc has a radius of curvature smaller than that of the colored photoresist The length of the lower surface of the color photoresist, that is, the center of curvature of the upper surface of the color photoresist is located near the lower surface of the color photoresist. 16. The method for manufacturing a color filter substrate as claimed in claim 14, the arc of the upper surface of the color photoresist is a standard arc, that is, the arc has a radius of curvature, and the radius of curvature is equal to the color of the colored light. Half of the length of the lower surface of the color photoresist, that is, the center of curvature of the upper surface of the color photoresist is exactly located at the lower surface of the color photoresist. 17. The method for manufacturing a color filter substrate as claimed in claim 14, the arc of the upper surface of the color photoresist is a non-standard arc, that is, the arc has a plurality of radii of curvature, and the plurality of curvatures The radii are all smaller than the length of the lower surface of the color photoresist. 18. The method for manufacturing a color filter substrate as claimed in claim 14, the arc of the upper surface of the color photoresist is a non-standard arc, that is, the arc has multiple radii of curvature, wherein at least one curvature The center of curvature corresponding to the radius is located at the lower surface of the color photoresist.