CN102820614B - A kind of semiconductor laser - Google Patents
A kind of semiconductor laser Download PDFInfo
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- CN102820614B CN102820614B CN201210296684.5A CN201210296684A CN102820614B CN 102820614 B CN102820614 B CN 102820614B CN 201210296684 A CN201210296684 A CN 201210296684A CN 102820614 B CN102820614 B CN 102820614B
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Abstract
The invention provides a kind of semiconductor laser.This semiconductor laser comprises the protector of laser head, and the protector of described laser head is provided with the first through hole, laser light protective goggles and the second through hole successively along laser emitting direction; Cooling light barrier is provided with along laser emitting direction in the protector outside of described laser head, third through-hole is provided with in described cooling light barrier, described third through-hole and described second through hole align, be provided with the cooling duct extended in described cooling light barrier around described third through-hole, in described cooling duct, be filled with coolant.Semiconductor laser of the present invention, the coolant of its cooling duct can cool the high temperature produced during whole laser head work, thus heat of high temperature when preventing work arrives laser head by heat transfer, fire damage is caused to the precise part in laser head, affects laser head and normally work.
Description
Technical field
The present invention relates to a kind of semiconductor laser, belong to laser equipment field.
Background technology
Laser is a kind of device of energy Emission Lasers.Within 1954, make First maser, obtain highly relevant microbeam.A.L. Xiao Luo in 1958 and this laser-microwave quantum amplifier principle of C.H. soup promote the use of optical frequency range, and indicate lasing method.The people such as nineteen sixty T.H. Mei Man have made first ruby laser.The people such as A. Jia Wen in 1961 have made helium neon laser.The people such as R.N. Halls in 1962 have formulated gallium arsenide semiconductor laser.
The kind of current laser is a lot.Difference according to operation material states of matter can be divided into all lasers following a few class: the first kind, solid-state laser (crystal and glass) laser; Equations of The Second Kind, gas laser, gas laser can atomize gas laser, ion gas laser, molecular gas laser, quasi-molecule gas laser etc. further; 3rd class, liquid laser, the operation material that this kind of laser adopts mainly comprises two large classes, and a class is organic fluorescent dye solution, and another kind of is inorganic compound solution containing rare earth ion; 4th class, semiconductor laser; 5th class, free electron laser.
Wherein the semiconductor laser of the 4th class is that due to the difference in the structure of matter, lasing detailed process is more special with the class laser of semi-conducting material as operation material.Common used material has GaAs (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS) etc.Energisation mode has electrical pumping, electron beam excitation and optical pumping three kinds of forms.Semiconductor laser device, can be divided into homojunction, single heterojunction, double heterojunction etc. several.
Usually on the protector of the laser head of semiconductor laser, be provided with laser light protective goggles, this laser light protective goggles is used for through the laser coming from laser light emitting host, and the laser through laser light protective goggles can directly act on surface of the work.But, semiconductor laser is when carrying out laser melting coating processing, because needs utilize high-energy beam by required alloy powder cladding at surface of the work, therefore alloy powder melts splashing under high energy laser, this melted alloy powder splash likely can reach the surface of laser light protective goggles, thus pollutes or calcination laser light protective goggles.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of semiconductor laser that can prevent the contaminated or calcination of the laser light protective goggles of semiconductor laser.
Particularly, technical scheme provided by the present invention is as follows:
Technical scheme 1.
A kind of semiconductor laser, comprise the protector of laser head, the protector of described laser head is provided with the first through hole, laser light protective goggles and the second through hole successively along laser emitting direction, described laser light protective goggles can through laser, be formed with the first cavity between described first through hole and described laser light protective goggles, between described laser light protective goggles and described second through hole, be formed with the second cavity;
Cooling light barrier is provided with along laser emitting direction in the protector outside of described laser head, third through-hole is provided with in described cooling light barrier, described third through-hole and described second through hole align, be provided with the cooling duct extended in described cooling light barrier around described third through-hole, in described cooling duct, be filled with coolant.
Technical scheme 2.
Semiconductor laser according to technical scheme 1, it changes part and is, described cooling duct is combined by multistage linear pattern expanding channels.
Technical scheme 3.
Semiconductor laser according to technical scheme 2, it changes part and is, described multistage linear pattern passage comprises at least one section of changeover portion passage of inducer passage, outlet block channel, connection described inducer passage and described outlet block channel,
At least one end of described changeover portion passage has the aperture of through described cooling light barrier, is shaped with internal thread in described aperture.
Technical scheme 4.
Semiconductor laser according to technical scheme 3, it changes part and is, described coolant is water.
Technical scheme 5.
Semiconductor laser according to technical scheme 4, it changes part and is, the internal diameter of described third through-hole is less than or equal to the internal diameter of described second through hole.
Technical scheme 6.
Semiconductor laser according to any one of technical scheme 1 to 5, it changes part and is, gas purging device is provided with, the region described in the gas flow purging coming from described gas purging device between the second through hole and described third through-hole between the protector and described cooling light barrier of described laser head.
Technical scheme 7.
Semiconductor laser according to any one of technical scheme 1 to 5, it changes part and is, gas purging device is provided with along laser emitting direction, the region below third through-hole described in the gas flow purging coming from described gas purging device in the outside of described cooling light barrier.
Technical scheme 8.
Semiconductor laser according to any one of technical scheme 1 to 5, it changes part and is, described first cavity have the first gas access and the first gas vent, described second cavity have the second gas access and the second gas vent, described first gas vent is communicated with described second gas access, and described second gas vent is described second through hole.
Technical scheme 9.
Semiconductor laser according to technical scheme 8, its improvements are, described second cavity is cone-shaped cavity.
According to the semiconductor laser of technical scheme 1 of the present invention, because the protector outside at described laser head is provided with cooling light barrier along laser emitting direction, and be provided with cooling duct in described cooling light barrier, coolant is filled with in described cooling duct, therefore this cooling light barrier can cool the high temperature produced during whole laser head work, thus heat of high temperature when preventing work arrives laser head by heat transfer, fire damage is caused to the precise part in laser head, affects laser head and normally work.
According to the semiconductor laser of technical scheme 2 of the present invention, the form of described cooling duct is limited, due to cooling light barrier be generally tetragonal writing board shape, around the third through-hole of this cooling light barrier disposable processing be interconnected cooling duct time, processing difficulties.Therefore can around third through-hole processing multistage linear pattern passage, be then interconnected by this multistage linear pattern passage and form overall cooling duct, process simple and convenient.
According to the semiconductor laser of technical scheme 3 of the present invention, carry out limiting further to the form of described cooling duct, such as described multistage linear pattern passage can comprise at least one section of changeover portion passage of inducer passage, outlet block channel, connection described inducer passage and described outlet block channel, at least one end of wherein said changeover portion passage has the aperture of through described cooling light barrier, is shaped with internal thread in described aperture.Like this, when filling coolant in described cooling duct, by bolt, described aperture can be blocked, thus being namely convenient to the processing of this changeover portion passage, described inducer passage can be communicated with described outlet block channel by this changeover portion passage again.
In technical scheme 4 of the present invention, as coolant, prioritizing selection water.Due to water wide material sources, cost is lower, and specific heat capacity is comparatively large simultaneously, in the use of reality, preferentially selects.
In technical scheme 5 of the present invention, carry out preferably, preferably making the internal diameter of described third through-hole be less than or equal to the internal diameter of described second through hole to the size of described third through-hole and the size of described second through hole.This is because, in the process of laser melting coating processing, the divergence range of laser is less, and due to the high temperature of laser melting coating, to swash the sputtering scope of the alloy powder of fusing larger, when the internal diameter of third through-hole is set to the internal diameter being less than or equal to the second through hole, not only do not affect the injection of laser, but also can stop that the splash of fusing sputtering crosses third through-hole and the second through hole enters into the second inside cavity, and and then arrive described laser light protective goggles, avoid pollute laser light protective goggles.
According to the semiconductor laser of technical scheme 6 ~ 7 of the present invention, further improvement has been carried out to described semiconductor laser, gas purging device is added in described semiconductor laser, carrying out in the laser processing procedures such as laser melting coating, the air-flow coming from gas purging device constantly can purge the region between described second through hole and described third through-hole or the region below described third through-hole, namely the region below described second through hole can constantly be purged, thus described second through hole that polluter or molten alloy splash can be blown off, polluter or molten alloy splash is avoided to arrive described laser light protective goggles by described second through hole, thus avoid described laser light protective goggles polluted or destroy.
As gas purging device, have employed compressed air blowing cleaner, this adopts for the requirement reduced costs.Because air source is extensive, can obtain with air compressor.
According to the semiconductor laser of technical solution of the present invention 8, by arranging the first gas access and the first gas vent in the first cavity, and the second gas access and the second gas vent are set in the second cavity, and be communicated with described first gas vent and be communicated with described second cavity to make described first cavity with described second gas access, like this except the polluter around described second through hole or molten alloy splash blow off by use gas purging device, for ensureing the drying of laser head and cleaning that to pass into gas in described first cavity and described second cavity be inert nitrogen gas, make to remain malleation in the second cavity, prevent entering of polluter or molten alloy splash.Particularly; when passing into gas in described first cavity; gas can be made to enter described second cavity, thus make polluter or molten alloy powder away from described laser light protective goggles, thus play the protective effect to described laser light protective goggles further.
According to the semiconductor laser of technical solution of the present invention 9, because described second cavity is the cone-shaped cavity surrounding described laser light protective goggles, the internal diameter of the bottom of cone-shaped cavity is less than the internal diameter on the top of cone-shaped cavity.Namely diminishing structure from top to bottom, such structure not only can improve blows power from described protection cone through hole air-flow out, and decreases the probability that laser reflection enters cavity scaling loss protection glass.
Accompanying drawing explanation
Fig. 1 is the composition schematic diagram of the semiconductor laser of the first execution mode of the present invention.
Fig. 2 is the schematic diagram cooling light barrier in semiconductor laser shown in Fig. 1.
Fig. 3 is the left view of the light barrier of cooling shown in Fig. 2.
Fig. 4 is the composition schematic diagram of the semiconductor laser of the second execution mode of the present invention.
Each label in accompanying drawing represents respectively:
1---the protector of laser head, 101---the first through hole, 102---laser light protective goggles, 103---the second through hole, 104---gas purging device, 2---workpiece, 3---molten alloy powder, 4---the first cavity, 401---the first gas access, 402---the first gas vent, 5---the second cavity, 501---the second gas access, 6---connecting pipeline, 7---cooling light barrier, 71---third through-hole, 72---cooling duct, 721---inducer passage, 722---outlet block channel, 723---changeover portion passage, 724---aperture, 73---coolant.
Embodiment
In order to make those skilled in the art can clearly understand technical scheme of the present invention, be described in detail below in conjunction with drawings and embodiments.
Refer to Fig. 1 or Fig. 4, Fig. 1 and Fig. 4 is the composition schematic diagram of the semiconductor laser of two kinds of execution modes of the present invention.In Fig. 1 or Fig. 4, this semiconductor laser comprises the protector 1 of laser head, the protector 1 of laser head is provided with successively the first through hole 101, laser light protective goggles 102 and the second through hole 103 along laser emitting direction, laser light protective goggles 103 can through laser, be formed with the first cavity 4 between first through hole 101 and laser light protective goggles 102, between laser light protective goggles 102 and the second through hole 103, be formed with the second cavity 5.Be provided with cooling light barrier 7 along laser emitting direction in the outside of the protector 1 of laser head, third through-hole 71 is provided with in cooling light barrier 7, third through-hole 71 and the second through hole 103 align, known see Fig. 2 and Fig. 3, be provided with the cooling duct 72 extended in described cooling light barrier 7 around third through-hole 71, in described cooling duct 72, be filled with coolant 73.At the workpiece 2 that the below of the protector 1 of laser head is to be processed, as can be seen from Fig. 1 or Fig. 4, position workpiece 2 accepting laser easily forms the molten alloy powder 3 of sputtering of burning because of laser high temperature.
Wherein due to the existence of the second through hole 103 and third through-hole 71; laser light protective goggles 102 is directly exposed in air as the eyeglass eventually to outside injection laser; so in the present invention, in order to protect the surface of laser light protective goggles 102 not encroached on, be provided with cooling light barrier 7.When being provided with cooling light barrier 7, the coolant be filled in the cooling duct of cooling light barrier 7 can cool the high temperature produced during whole laser head work, thus heat of high temperature when preventing work arrives laser head by heat transfer, fire damage is caused to the precise part in laser head, affects laser head and normally work.
As shown in Figure 2, cooling duct 72 in cooling light barrier 7 in the embodiment of the present invention is combined by three sections of linear pattern expanding channels, these three sections of linear pattern passages can individually process, and be communicated with the cooling duct forming entirety, this linear pattern passageway machining is simple and convenient, has good processability.It should be noted that, described cooling duct is not limited to be combined by three sections of linear pattern expanding channels, in other embodiments of the invention, can by four sections, five sections, or more section linear pattern expanding channels combine.Such as, when the shape cooling light barrier 7 is pentagon, four sections of linear pattern expanding channels just can be used to be combined to form cooling duct.
Further, described multistage linear pattern passage can comprise inducer passage 721, outlet block channel 722, connect at least one section of changeover portion passage 723 of described inducer passage 721 and described outlet block channel 722, in the state of fig. 2, the lower end of changeover portion passage 723 has the aperture 724 of through described cooling light barrier 7, is shaped with internal thread in described aperture 724.In aperture 724, be screwed into bolt (not shown), aperture 724 can be blocked, avoid the coolant be filled in cooling duct 72 to be revealed by aperture 724.Wherein be threaded closely reliable, sealing property is better.In addition, in other embodiments of the invention, also can not need to make internal thread, but unthreaded hole is made in described aperture, and then use seal to be sealed by this unthreaded hole.Be understandable that, described inducer passage 721 and described outlet block channel 722 are only the differences of title, are not limited to the position shown in Fig. 2, and the two can be replaced.
Coolant 73 in described cooling duct 72 can select water or fluid.In the use of reality, can select according to user demand.
Again known referring to Fig. 1, the internal diameter of third through-hole 71 equals the internal diameter of the second through hole 103, so not only do not affect the injection of laser, but also can stop that the fine powder of burning sputtering enters into the second inside cavity by third through-hole and the second through hole, and and then arrive described laser light protective goggles, avoid pollute laser light protective goggles.More preferably, the internal diameter of third through-hole 71 can also be made to be less than the internal diameter of the second through hole 103.
Improve as to the one of the embodiment of the present invention, gas purging device 104 can be increased in semiconductor laser, the air-flow coming from gas purging device 104 constantly can purge the region below the second through hole 103, thus second through hole 103 that polluter or molten alloy powder can be blown off, avoid polluter or molten alloy powder to arrive laser light protective goggles 102 by the second through hole 103, thus avoid laser light protective goggles 102 polluted or destroy.In the first execution mode of the semiconductor laser shown in Fig. 1, described gas purging device 104 can be located between the protector 1 of laser head and cooling light barrier 7, come from the region between gas flow purging second through hole 103 of gas purging device 104 and third through-hole 71, namely purge the region below the second through hole 103.In the second execution mode of the semiconductor laser shown in Fig. 4, described gas purging device 104 can be located at the below of cooling light barrier 7, region below the gas flow purging third through-hole 71 coming from gas purging device 104, namely can purge the region below the second through hole 103.
In addition, as can be seen from the execution mode shown in Fig. 1 or Fig. 4 of the present invention, the first cavity 4 has the first gas access 401 and the first gas vent 402, the second cavity 5 has the second gas access 501 and the second gas vent.Wherein, described first gas vent 402 is communicated with described second gas access 501, such as, can be communicated with by connecting pipeline 6, and described second gas vent is described second through hole 103.
By arranging the first cavity and the second cavity above and below described laser light protective goggles, and described first cavity is communicated with described second cavity, like this except the polluter around described second through hole or molten alloy powder blow off by use gas purging device, gas such as nitrogen can also be passed into, with the polluter that will enter in described second cavity or the blowout of molten alloy powder in described first cavity and described second cavity.Particularly; when passing into gas in described first cavity; gas can be made to enter described second cavity, thus make polluter or molten alloy powder away from described laser light protective goggles, thus play the protective effect to described laser light protective goggles further.
Further, described second cavity 5 is cone-shaped cavity, and because described second cavity is the cone-shaped cavity surrounding described laser light protective goggles, the internal diameter of the bottom of cone-shaped cavity is less than the internal diameter on the top of cone-shaped cavity.Namely diminishing structure from top to bottom, such structure can improve blows power from described second through hole air-flow out.
Claims (5)
1. a semiconductor laser, it comprises the protector of laser head, it is characterized in that:
The protector of described laser head is provided with the first through hole, laser light protective goggles and the second through hole successively along laser emitting direction, described laser light protective goggles can through laser, be formed with the first cavity between described first through hole and described laser light protective goggles, between described laser light protective goggles and described second through hole, be formed with the second cavity;
Cooling light barrier is provided with along laser emitting direction in the protector outside of described laser head, third through-hole is provided with in described cooling light barrier, described third through-hole and described second through hole align, be provided with the cooling duct extended in described cooling light barrier around described third through-hole, in described cooling duct, be filled with water;
The internal diameter of described third through-hole is less than or equal to the internal diameter of described second through hole;
Gas purging device is provided with, the region described in the gas flow purging coming from described gas purging device between the second through hole and described third through-hole between the protector and described cooling light barrier of described laser head;
Gas purging device is provided with along laser emitting direction, the region below third through-hole described in the gas flow purging coming from described gas purging device in the outside of described cooling light barrier.
2. semiconductor laser according to claim 1, is characterized in that, described cooling duct is combined by multistage linear pattern expanding channels.
3. semiconductor laser according to claim 2, is characterized in that, described multistage linear pattern passage comprises at least one section of changeover portion passage of inducer passage, outlet block channel, connection described inducer passage and described outlet block channel,
At least one end of described changeover portion passage has the aperture of through described cooling light barrier, is shaped with internal thread in described aperture.
4. semiconductor laser according to claim 1, it is characterized in that, described first cavity have the first gas access and the first gas vent, described second cavity have the second gas access and the second gas vent, described first gas vent is communicated with described second gas access, and described second gas vent is described second through hole.
5. semiconductor laser according to claim 4, is characterized in that, described second cavity is cone-shaped cavity.
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| CN201210296684.5A CN102820614B (en) | 2012-08-21 | 2012-08-21 | A kind of semiconductor laser |
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| CN201210296684.5A CN102820614B (en) | 2012-08-21 | 2012-08-21 | A kind of semiconductor laser |
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| CN102820614B true CN102820614B (en) | 2015-08-05 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102090708B1 (en) * | 2013-01-22 | 2020-04-16 | 삼성디스플레이 주식회사 | Laser annealing apparatus |
| CN105403238A (en) * | 2015-12-08 | 2016-03-16 | 徐州华恒机器人系统有限公司 | Protection structure of four-eye laser device and four-eye laser device adopting the same |
| CN105403237A (en) * | 2015-12-08 | 2016-03-16 | 徐州华恒机器人系统有限公司 | Protection structure of binocular laser device and binocular laser device adopting the same |
| TWI632015B (en) * | 2017-01-03 | 2018-08-11 | 財團法人工業技術研究院 | Protective device |
| CN108620390A (en) * | 2018-06-26 | 2018-10-09 | 武汉华星光电技术有限公司 | Radium-shine laser module, radium-shine laser and radium-shine laser means |
| CN111360394B (en) * | 2018-12-25 | 2021-09-17 | 杭州海康微影传感科技有限公司 | Laser adjusting mechanism |
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| CN200969481Y (en) * | 2006-10-12 | 2007-10-31 | 沈阳大陆激光成套设备有限公司 | Compound cold laser mirror base |
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| CN202752750U (en) * | 2012-08-21 | 2013-02-27 | 山东能源机械集团大族再制造有限公司 | Semiconductor laser |
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| CN2683306Y (en) * | 2004-02-25 | 2005-03-09 | 中国航空工业第一集团公司北京航空制造工程研究所 | Gas protection device for YAG laser welding flat welding joint |
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