CN102820262A - Glass through hole manufacturing and interconnecting method - Google Patents
Glass through hole manufacturing and interconnecting method Download PDFInfo
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- CN102820262A CN102820262A CN2012103256576A CN201210325657A CN102820262A CN 102820262 A CN102820262 A CN 102820262A CN 2012103256576 A CN2012103256576 A CN 2012103256576A CN 201210325657 A CN201210325657 A CN 201210325657A CN 102820262 A CN102820262 A CN 102820262A
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- 239000011521 glass Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000005340 laminated glass Substances 0.000 claims abstract description 30
- 229920000642 polymer Polymers 0.000 claims abstract description 3
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000001465 metallisation Methods 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- 238000005488 sandblasting Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 6
- 238000005289 physical deposition Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010892 electric spark Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005553 drilling Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000003475 lamination Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Micromachines (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention discloses a glass through hole manufacturing and interconnecting method. The method comprises the following steps of: binding and linking a plurality of glass substrates in a laminated manner through a polymer; manufacturing through holes which are vertical with the surfaces of the laminated glass substrates; metallically filling the through holes of the laminated glass; and unlinking the laminated glass. The method provided by the invention has the advantages that the though holes are simultaneously manufactured in a plurality of the layers of the glass substrates by using a glass substrate laminated linking method, so that the problems of low manufacturing efficiency, expensive cost, low yield and the like caused by the traditional method for manufacturing the through hole by using a single substrate can be solved.
Description
Technical Field
The invention relates to a method for manufacturing and interconnecting glass through holes, and belongs to the technical field of microelectronic packaging.
Background
With the development of the demand of electronic products toward miniaturization, multifunction, environmental protection, etc., people strive to make electronic systems smaller and higher in integration and function more and more, thereby generating many new technologies, new materials and new designs, wherein the technologies of the stacked chip Package and the System-in-Package (SiP) are typical representatives of the technologies.
The three-dimensional packaging technology refers to a packaging technology of stacking more than two chips in the same package in a vertical direction without changing the size of the package, and the three-dimensional packaging technology is derived from the laminated packaging of a flash memory (NOR/NAND) and an SDRAM (synchronous dynamic random access memory). Through Silicon Vias (TSV) is one of the key technologies in realizing three-dimensional packaging. This is due to the fact that the TSV can achieve full silicon packaging, is compatible with semiconductor CMOS technology, can increase component density in equal proportion, reduces interconnection delay problems, and achieves high-speed interconnection compared with a traditional interconnection mode.
Compared with a common substrate, the silicon substrate TSV has the advantages that: 1) the aperture of the through hole of the silicon substrate is far smaller than that of the through hole of the printed circuit board; 2) the depth-to-width ratio of the through hole of the silicon substrate is far greater than that of the through hole of the printed circuit board; 3) the density of through-holes of the silicon substrate is much greater than that of through-holes of the printed circuit board. Based on the above characteristics, research thereof plays an extremely important role in the development of MEMS and semiconductor processes.
The Glass substrate TGV (through Glass Via) has the advantages compared with the common silicon substrate: 1) the cost is low; 2) the sealing performance is excellent; 3) the insulativity is better; 4) the high-frequency loss is low; 5) a high modulus; 6) transparent and shows excellent optical performance.
The traditional manufacturing process for TGV pore-forming of the single glass substrate comprises the following steps: 1) drilling holes by ultrasonic waves; 2) a sand blasting method; 3) wet etching; 4) dry etching; 5) laser etching; 6) and (6) mechanically drilling.
However, since the processes used are based on a single glass substrate, there is an impact on the price of the final product, and even many processes still have many problems, where high aspect ratio via fabrication is a key issue. Reliability studies for vias continue. For the through hole manufacturing of the single glass substrate, the manufacturing cost is high and the efficiency is low.
Due to various adverse factors of these single-chip conventional manufacturing methods, the yield and reliability of the product, as well as the final shipping price, are greatly affected. Various new process methods are gradually proposed and discussed, but the methods are all performed on the basis of a single-chip manufacturing process, and have the defects of low manufacturing efficiency, high cost and the like.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method for manufacturing and interconnecting glass through holes, which is used for laminating and bonding multiple layers of glass substrates together and realizing the glass through holes in a mechanical, laser, sand blasting or etching mode and the like so as to effectively finish an interconnection structure adopting a TGV technology in three-dimensional packaging or MEMS packaging.
The technical scheme adopted by the invention comprises a manufacturing method of glass through holes and a manufacturing method of interconnection of the glass through holes.
The manufacturing method of the glass through hole comprises the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) and debonding the laminated glass substrate to separate the glass substrate.
After step 3, each individual glass substrate is cleaned to remove the adhesive, so as to facilitate the subsequent interconnection manufacturing process.
The manufacturing method of the glass through hole interconnection comprises the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) manufacturing an adhesion layer on the side wall of the through hole by adopting a physical deposition or chemical deposition method;
4) filling the through hole of the laminated glass substrate with metallization;
5) and debonding the laminated glass substrate to separate the glass substrate.
Before step 3, the laminated glass substrate with the through hole structure is also cleaned to remove the adhesive.
Before step 5, chemical mechanical polishing is used to remove the metal on the upper surface of the laminated glass substrate after the metallization filling.
After step 5, each individual glass substrate is thinned to a desired thickness by cleaning and surface planarization polishing.
The material of the adhesion layer is at least one of Ni, Ta, Ti, Pt, Pd, AlN and TiN.
The through hole metallization filling of the laminated glass substrate is realized by means of electroplating, electroless plating, physical deposition or liquid metal filling. The metallization filling adopts one of Cu, Sn, W, Ti, Pt, Pd, Ni and Au as a filling material.
The glass substrate lamination bonding in step 1 of the two methods is realized by a polymer material bonding method, wherein the polymer material is one of Polyimide, SU8 and BCB, and a lamination structure of a multilayer glass substrate and the Polyimide, SU8 or BCB is formed. The through hole is manufactured by adopting one method of mechanical processing, laser processing, sand blasting and drilling or etching. The aperture range of the through hole is 5um-500 um.
In the two methods, the purpose of separating the glass substrate is achieved by dissolving the polymer by using a chemical solution; or the laminated glass substrate is split by using electric sparks, wire cutting, blade cutting and other modes.
The two methods can also comprise a procedure of manufacturing a pattern required by the through hole on the surface of one side of the laminated glass plate substrate before the step 2.
The invention has the advantages that: the method comprises the steps of realizing lamination bonding of the multilayer glass substrate, manufacturing a vertical through hole structure on the bonded multilayer glass substrate by adopting a mechanical processing method, a laser processing method, a sand blasting drilling method or an etching method, completing through hole metallization filling of the multilayer glass substrate by electroplating, chemical plating, physical deposition and liquid metal filling, and realizing through hole metallization filling of the multilayer glass substrate at one time. The method can greatly shorten the manufacturing time of the glass through hole and greatly reduce the production cost.
Drawings
FIGS. 1(a) - (d) are process flow diagrams of examples of through-glass vias according to the present invention. Wherein,
FIG. 1(a) is a first step of a glass via fabrication method and a glass via interconnect fabrication method;
FIG. 1(b) is a second step of the glass via fabrication method and the glass via interconnect fabrication method;
FIG. 1(c) shows step three of the glass via fabrication method;
fig. 1(d) shows a fourth step of the glass via hole formation method.
Fig. 2(a) - (d) are process flow diagrams of an example of a glass via interconnect of the present invention. Wherein,
FIG. 2(a) shows steps four and five of the method for fabricating a glass via interconnect;
FIG. 2(b) is step six of the glass via interconnect fabrication method;
FIG. 2(c) shows step eight of the glass via interconnect fabrication method;
fig. 2(d) shows a ninth step of the method for fabricating a glass via interconnect.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to specific embodiments and fig. 1 and 2.
A method for manufacturing a glass through hole comprises the following steps:
firstly, the method comprises the following steps: the glass substrate is 200 um glass, and the bonding material is Polyimide. Bonding the multiple layers of glass substrates together by adopting a hot pressing mode to form a laminated structure of the multiple layers of glass substrates and Polyimide 2, as shown in figure 1 (a);
II, secondly: making a pattern required by the through hole 3 on the surface of the glass substrate, and making a vertical through hole 3 structure on the bonded multilayer glass substrate 1 by using a mechanical processing, laser processing, sand blasting and drilling or etching method, as shown in fig. 1 (b);
thirdly, the method comprises the following steps: cutting and separating the laminated glass substrate along the middle part of the Polyimide by adopting methods such as chemistry, electric spark, wire cutting or blade cutting and the like to form a cutting path 4 shown in figure 1 (c);
fourthly, the method comprises the following steps: each individual glass substrate is cleaned for subsequent processing to make interconnections. As shown in fig. 1 (d).
A method for manufacturing glass through hole interconnection comprises the following steps:
firstly, the method comprises the following steps: the glass substrate is 200 um glass, and the bonding material is SU 8. Bonding the multiple glass substrates together by adopting a hot pressing mode to form a laminated structure of the multiple glass substrates and SU 87, as shown in figure 1 (a);
II, secondly: making a pattern required by the through hole 3 on the surface of the glass substrate, and making a vertical through hole 3 structure on the bonded multilayer glass substrate 1 by using a mechanical processing, laser processing, sand blasting and drilling or etching method, as shown in fig. 1 (b);
thirdly, the method comprises the following steps: using SC1 (NH)4+H2O2+H2O) cleaning the multilayer glass substrate with the manufactured through hole 3 structure to ensure that the surface cleanliness of the through hole 3 is more suitable for metal deposition;
fourthly, the method comprises the following steps: depositing an adhesion layer such as 200 nm Ti on the sidewall, as shown in FIG. 2 (a);
fifthly: depositing a layer of 1 um Cu as a seed layer on the surface of the adhesion layer, wherein the deposited adhesion layer and the seed layer 5 are shown in figure 2 (a);
sixthly, the method comprises the following steps: filling the through holes 3 of the laminated glass substrate with metal Cu 6 by electroplating, chemical plating or physical deposition, as shown in FIG. 2 (b);
seventhly, the method comprises the following steps: removing redundant Cu on the upper surface of the laminated glass substrate by adopting chemical mechanical polishing;
eighthly: cutting and separating the laminated glass substrate along the middle part of SU 87 by adopting methods such as electric spark, wire cutting or blade cutting, and the like to form a cutting channel 4 shown in figure 2 (c);
nine: each individual glass substrate was thinned to the desired thickness of 200 um using a cleaning and surface planarization polishing process, as shown in fig. 2 (d).
Claims (14)
1. A manufacturing method of a glass through hole is characterized by comprising the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) and debonding the laminated glass substrate to separate the glass substrate.
2. The method for forming a glass via according to claim 1, wherein the glass substrate is bonded by a polymer material bonding method, wherein the polymer material is one of Polyimide, SU8 and BCB, and a multi-layer glass substrate and a laminate of Polyimide, SU8 or BCB are formed.
3. The method for forming a glass via according to claim 1, further comprising a step of forming a desired pattern of the via on the surface of one side of the laminated glass substrate before the step 2.
4. The method of claim 1, wherein the through-glass via is formed by one of machining, laser machining, sand blasting, or etching.
5. The method for forming a glass via according to claim 1, wherein the diameter of the via is in the range of 5um to 500 um.
6. The method for forming a glass via according to claim 1, wherein the step 3 comprises dissolving the polymer in a chemical solution to separate the glass substrate; or the laminated glass substrate is split by using electric sparks, wire cutting, blade cutting and other modes.
7. The method for forming a glass via of claim 1 wherein after step 3, each individual glass substrate is cleaned for subsequent interconnection formation.
8. A manufacturing method of glass through hole interconnection is characterized by comprising the following steps:
1) laminating and bonding a plurality of glass substrates together by a hot pressing method to form a laminated bonding structure of the multilayer glass substrates;
2) manufacturing a through hole structure vertical to the surface of the laminated glass substrate on the bonded laminated glass substrate;
3) manufacturing an adhesion layer on the side wall of the through hole by adopting a physical deposition or chemical deposition method;
4) filling the through hole of the laminated glass substrate with metallization;
5) and debonding the laminated glass substrate to separate the glass substrate.
9. The method for forming a glass via interconnection of claim 8, wherein the laminated glass substrate having the via structure is cleaned before the step 3.
10. The method of claim 8, wherein said adhesion layer is at least one of Ni, Ta, Ti, Pt, Pd, AlN and TiN.
11. The method of claim 8, wherein the via metallization filling of the laminated glass substrate is performed by electroplating, electroless plating, physical deposition, or liquid metal filling.
12. The method of claim 8, wherein the metallization fill is one of Cu, Sn, W, Ti, Pt, Pd, Ni, and Au.
13. The method of claim 8, wherein prior to step 5, chemical mechanical polishing is used to remove metal from the top surface of the glass substrate after the metallization fill.
14. The method of claim 8, wherein after step 5, each individual glass substrate is thinned to a desired thickness by cleaning and surface planarization polishing.
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| CN2012103256576A CN102820262A (en) | 2012-09-05 | 2012-09-05 | Glass through hole manufacturing and interconnecting method |
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| CN2012103256576A CN102820262A (en) | 2012-09-05 | 2012-09-05 | Glass through hole manufacturing and interconnecting method |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| CN105160337A (en) * | 2015-08-31 | 2015-12-16 | 上海箩箕技术有限公司 | Manufacturing method for glass outer cover plate |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US9889635B2 (en) | 2012-12-13 | 2018-02-13 | Corning Incorporated | Facilitated processing for controlling bonding between sheet and carrier |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
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| CN112340694A (en) * | 2020-11-03 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| CN113488431A (en) * | 2021-05-24 | 2021-10-08 | 北京大学 | Preparation method of glass substrate comprising through hole with high depth-to-width ratio |
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| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
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| CN114686234A (en) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | Thinning agent for rear cover of glass mobile phone |
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| US11999135B2 (en) | 2017-08-18 | 2024-06-04 | Corning Incorporated | Temporary bonding using polycationic polymers |
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|---|---|---|---|---|
| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| US10538452B2 (en) | 2012-12-13 | 2020-01-21 | Corning Incorporated | Bulk annealing of glass sheets |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US9889635B2 (en) | 2012-12-13 | 2018-02-13 | Corning Incorporated | Facilitated processing for controlling bonding between sheet and carrier |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| CN103247570A (en) * | 2013-05-10 | 2013-08-14 | 华进半导体封装先导技术研发中心有限公司 | Manufacturing method for silicon through holes and silicon through hole interconnection |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| US11123954B2 (en) | 2014-01-27 | 2021-09-21 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US10046542B2 (en) | 2014-01-27 | 2018-08-14 | Corning Incorporated | Articles and methods for controlled bonding of thin sheets with carriers |
| US11192340B2 (en) | 2014-04-09 | 2021-12-07 | Corning Incorporated | Device modified substrate article and methods for making |
| US11167532B2 (en) | 2015-05-19 | 2021-11-09 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11660841B2 (en) | 2015-05-19 | 2023-05-30 | Corning Incorporated | Articles and methods for bonding sheets with carriers |
| US11905201B2 (en) | 2015-06-26 | 2024-02-20 | Corning Incorporated | Methods and articles including a sheet and a carrier |
| CN105160337A (en) * | 2015-08-31 | 2015-12-16 | 上海箩箕技术有限公司 | Manufacturing method for glass outer cover plate |
| US11097509B2 (en) | 2016-08-30 | 2021-08-24 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| US12122138B2 (en) | 2016-08-30 | 2024-10-22 | Corning Incorporated | Siloxane plasma polymers for sheet bonding |
| US11535553B2 (en) | 2016-08-31 | 2022-12-27 | Corning Incorporated | Articles of controllably bonded sheets and methods for making same |
| US11999135B2 (en) | 2017-08-18 | 2024-06-04 | Corning Incorporated | Temporary bonding using polycationic polymers |
| US11331692B2 (en) | 2017-12-15 | 2022-05-17 | Corning Incorporated | Methods for treating a substrate and method for making articles comprising bonded sheets |
| CN112340694B (en) * | 2020-11-03 | 2023-05-12 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| CN112340694A (en) * | 2020-11-03 | 2021-02-09 | 中国电子科技集团公司第二十九研究所 | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
| CN114686234A (en) * | 2020-12-30 | 2022-07-01 | 伯恩光学(惠州)有限公司 | Thinning agent for rear cover of glass mobile phone |
| CN113488431A (en) * | 2021-05-24 | 2021-10-08 | 北京大学 | Preparation method of glass substrate comprising through hole with high depth-to-width ratio |
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