CN102768968B - Method for detecting diffusivity of wellblock implantation ions in different concentrations - Google Patents
Method for detecting diffusivity of wellblock implantation ions in different concentrations Download PDFInfo
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- CN102768968B CN102768968B CN201210225802.3A CN201210225802A CN102768968B CN 102768968 B CN102768968 B CN 102768968B CN 201210225802 A CN201210225802 A CN 201210225802A CN 102768968 B CN102768968 B CN 102768968B
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Abstract
The invention relates to a method for detecting the diffusivity of wellblock implantation ions in different concentrations, and the method includes the following steps: step 1, establishing a test module, wherein active areas on the module include a P wellblock and an N wellblock separated through shallow trench isolation; step 2, simulating the process structure, and forming tungsten connection holes in the wellblock; step 3; performing ion implantation, only implantation of ions in different concentrations into the P wellblock and the N wellblock; and step 4, scanning the test module to obtain a continuous-tone image of the tungsten connection holes. The method provides references for wellblock optimization of the semiconductor device, provides guarantee for yield improvement, and is simple and easy to carry out.
Description
Technical field
The invention belongs to semiconductor applications, relate to a kind of method detecting ion-diffusibility, particularly relate to a kind of method detecting wellblock injection ion diffusivity under variable concentrations condition.
Background technology
The quality of semiconductor device wellblock plays a key effect to semiconductor device, when below 55nm accomplished by device, is even more important to the control of wellblock.There is several factors can have an impact to the wellblock of semiconductor device, as injected the dosage of ion, the degree of depth, angle, and ion self diffusion etc.And owing to lacking the Efficient Evaluation method to ion self diffusivity, so be difficult to control its impact on device.
Be injected into the ion of wellblock, repair in thermal annealing process at follow-up lattice, along destroyed lattice diffusion, and horizontal proliferation can be mostly.And the horizontal proliferation of ion is very large to device performance harm, the ion of such as N-type wellblock is diffused into p type wells district under heat effect, can have a strong impact on the performance of NMOSFET device.Its ion diffuse region will produce with PMOSFET leaks electricity.
At present for the horizontal proliferation of the ion under the different ions concentration conditions of wellblock, mostly by wafer acceptance testing (wafer acceptance test, WAT) and testing electrical property carry out, because follow-up many processing procedures all can have an impact to WAT and electrical test results, be difficult to its lateral diffusion-capability of Accurate Measurement, and increase the process cycle time.
Therefore those skilled in the art is devoted to develop a kind of method that effectively can detect wellblock injection ion diffusivity under variable concentrations condition.
Summary of the invention
In view of above-mentioned the problems of the prior art, technical problem to be solved by this invention is that existing technology lacks the method effectively detecting wellblock injection ion diffusivity under variable concentrations condition.
A kind of method detecting wellblock injection ion diffusivity under variable concentrations condition of the present invention, comprises the following steps:
Step 1, sets up test module, and the behaviour area in described module comprises the P wellblock and N wellblock that are separated by shallow trench isolation;
Step 2, simulation process structure, arranges the tungsten connecting hole of wellblock;
Step 3, carries out ion implantation, and only carries out the variable concentrations ion implantation of described P wellblock or N wellblock;
Step 4, scans test module, obtains the continuous-tone image of tungsten connecting hole.
In a better embodiment of invention, the size of described behaviour area is 20umx50um.
In another better embodiment of invention, the bottom width of described shallow trench isolation is 160 ~ 250nm.
In another better embodiment of invention, only carry out described P wellblock variable concentrations ion implantation in described step 3, if the tungsten connecting hole in described step 4 becomes clear, ion diffuse is to N wellblock; If the tungsten connecting hole in described step 4 is gloomy, ion is not diffused into N wellblock.
In another better embodiment of invention, in described step 4, applying electronic harness defects scanner scans test module.
In another better embodiment of invention, also comprise step 5, the continuous-tone image of the bottom width of shallow trench isolation and described tungsten connecting hole is compared thus obtains the diffusivity of ion.
The present invention, by setting up test module, simulates device architecture in actual processing procedure, and injects the condition of ion according to required adjustment.Then applying electronic harness defects scanner checks, the lateral diffusion-capability of wellblock ion is calculated according to test module and scanning result, under effective measuring and calculating different ions concentration conditions, the lateral diffusion-capability of wellblock ion, provides powerful support for for semiconductor device processing procedure provides.The present invention is that method is simple.
Accompanying drawing explanation
Fig. 1 is the flow chart of embodiments of the invention;
Fig. 2 a is the tungsten connecting hole brightness schematic diagram not being subject to the ion diffuse impact of N wellblock;
Fig. 2 b is the tungsten connecting hole brightness schematic diagram for affecting by N wellblock ion diffuse.
Embodiment
Inject the method for ion diffusivity under variable concentrations condition in the detection wellblock of embodiments of the invention, comprise the following steps:
Step 1, sets up test module.Module marks off the behaviour area (AA) of the certain area of different group, and such as size is 20umx50um.On these AA, interval divides P wellblock and N wellblock, is separated, the bottom width of STI is done different windows on actual processing procedure basis between P well and N well by shallow trench isolation (STI).Such as suppose that actual STI width is 250nm, so can make ten windows of the decile of 160 to 250 respectively, such as suppose that actual STI width is Y nm, so can make the window of the decile of Y-40 to Y+50 respectively.This kind of test module can be laid on wafer as required.Under determining other condition prerequisites, change the condition wanting to calculate wellblock ion implantation.
Step 2, simulates actual process structure, arranges the tungsten connecting hole of wellblock, and suitably simplifies.Such as be simplified to the device distribution and structure that mainly contain P wellblock and N wellblock composition.It is the interference of removing other factors by the object that structure carries out simplifying.
Step 3, adjusts wellblock ion implanting conditions as required.Detect the spread condition under N well ion variable concentrations condition as needed, ion implantation is omitted in P wellblock, and the ion of variable concentrations is injected in N wellblock.
Step 4, applying electronic harness defects scanner checks.When processing procedure goes to tungsten connecting hole, applying electronic harness defects scanner (E-beam) scans test module.As shown in figs. 2 a and 2b, wherein 1 is N wellblock, and 11 is the tungsten connecting hole of N wellblock, and 2 is shallow trench isolation, and 3 is P wellblock, and 31 is the tungsten connecting hole of P wellblock.Under normal circumstances, as shown in Figure 2 a, the tungsten connecting hole 31 of NMOSFET is gloomy under the positive loading condition of E-beam, and the tungsten connecting hole 11 of PMOSFET is bright, if but P well ion diffuse is to N well area, as shown in figure 2b, then can be the tungsten connecting hole 31 generation electric leakage (Leakage) of NMOSFET and become bright.
Step 5, according to due to this change, and the STI bottom width that integrating step 1 arranges just finally can obtain the ability of N wellblock ion horizontal proliferation under different ions concentration conditions.
Embodiments of the invention, by setting up test module, simulate device architecture in actual processing procedure, and inject the condition of ion according to required adjustment.Then applying electronic harness defects scanner checks, the lateral diffusion-capability of wellblock ion is calculated according to test module and scanning result, thus effectively can detect wellblock and inject the effective ways that ion lateral diffusion-capability changes with ion concentration, and then be the supplying method opinion of process window optimization and on-line monitoring, provide safeguard with Yield lmproved for semiconductor manufactures online.The present invention is that method is simple.
This method can be applied to the window of wellblock ion implantation ion concentration condition, thus optimized device performance.Whether the leakage problem of the device after measuring and calculating optimization obtains effective solution.
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (5)
1. detect the method that ion diffusivity under variable concentrations condition is injected in wellblock, it is characterized in that, comprise the following steps:
Step 1, sets up test module, and the behaviour area in described module comprises the P wellblock and N wellblock that are separated by shallow trench isolation;
Step 2, simulation process structure, arranges the tungsten connecting hole of wellblock;
Step 3, carries out ion implantation, and only carries out the variable concentrations ion implantation of described P wellblock or N wellblock;
Step 4, scans test module, obtains the continuous-tone image of tungsten connecting hole;
Wherein, also comprise step 5, the continuous-tone image of the bottom width of shallow trench isolation and described tungsten connecting hole is compared thus obtains the diffusivity of ion.
2. the method detecting wellblock injection ion diffusivity under variable concentrations condition as claimed in claim 1, it is characterized in that, the size of described behaviour area is 20umx50um.
3. the method detecting wellblock injection ion diffusivity under variable concentrations condition as claimed in claim 2, it is characterized in that, the bottom width of described shallow trench isolation is 160 ~ 250nm.
4. the method detecting wellblock injection ion diffusivity under variable concentrations condition as claimed in claim 1, it is characterized in that, only carry out described P wellblock variable concentrations ion implantation in described step 3, if the tungsten connecting hole in described step 4 becomes clear, ion diffuse is to N wellblock; If the tungsten connecting hole in described step 4 is gloomy, ion is not diffused into N wellblock.
5. the method detecting wellblock injection ion diffusivity under variable concentrations condition as claimed in claim 1, it is characterized in that, in described step 4, applying electronic harness defects scanner scans test module.
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| CN102768968B true CN102768968B (en) | 2014-12-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103489808B (en) * | 2013-09-22 | 2017-05-10 | 上海华力微电子有限公司 | Electron beam defect detection method capable of carrying out classification according to ion implantation areas |
| CN104269364B (en) * | 2014-09-01 | 2018-06-22 | 上海华力微电子有限公司 | A kind of method for detecting ion trap injection pattern and being influenced on device performance |
| CN104201128B (en) * | 2014-09-01 | 2017-07-07 | 上海华力微电子有限公司 | A kind of method that test pattern size influences on ion trap pattern |
| KR102525873B1 (en) * | 2015-10-16 | 2023-04-27 | 삼성전자주식회사 | Semiconductor process simulation device and simulation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3650020A (en) * | 1970-02-24 | 1972-03-21 | Bell Telephone Labor Inc | Method of monitoring semiconductor device fabrication |
| US6822430B2 (en) * | 2003-01-30 | 2004-11-23 | Advanced Micro Devices, Inc. | Method of assessing lateral dopant and/or charge carrier profiles |
| CN1979767A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Ion injection method for semiconductor device |
| CN101315901A (en) * | 2007-05-28 | 2008-12-03 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting planarization performance of shallow plough groove isolation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3650020A (en) * | 1970-02-24 | 1972-03-21 | Bell Telephone Labor Inc | Method of monitoring semiconductor device fabrication |
| US6822430B2 (en) * | 2003-01-30 | 2004-11-23 | Advanced Micro Devices, Inc. | Method of assessing lateral dopant and/or charge carrier profiles |
| CN1979767A (en) * | 2005-12-08 | 2007-06-13 | 上海华虹Nec电子有限公司 | Ion injection method for semiconductor device |
| CN101315901A (en) * | 2007-05-28 | 2008-12-03 | 中芯国际集成电路制造(上海)有限公司 | Method for detecting planarization performance of shallow plough groove isolation structure |
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