CN102758246A - Heat shielding device for single crystal furnace - Google Patents
Heat shielding device for single crystal furnace Download PDFInfo
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- CN102758246A CN102758246A CN2012102057039A CN201210205703A CN102758246A CN 102758246 A CN102758246 A CN 102758246A CN 2012102057039 A CN2012102057039 A CN 2012102057039A CN 201210205703 A CN201210205703 A CN 201210205703A CN 102758246 A CN102758246 A CN 102758246A
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- heat
- heat shielding
- heat screen
- single crystal
- screen
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- 239000013078 crystal Substances 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 238000004321 preservation Methods 0.000 claims description 6
- 230000012010 growth Effects 0.000 abstract description 10
- 238000002425 crystallisation Methods 0.000 abstract description 8
- 230000008025 crystallization Effects 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 6
- 230000005855 radiation Effects 0.000 abstract description 5
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000007664 blowing Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002572 peristaltic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a heat shielding device for a single crystal furnace, which comprises a heat screen arranged around a silicon single crystal rod; the upper end of the heat screen is connected with an upper cover of the heat screen; an upper heat insulation barrel is arranged under the upper cover of the heat screen; the heat screen consists of a heat screen outer shell, a heat screen inner shell and an intermediate heat screen heat insulation layer; the heat screen takes on a circular truncated cone shape, and is provided with a central channel; the included angle between the heat screen and the upper cover of the heat screen is 40-50 degrees; and the longitudinal section of the central channel is in a trapezoid. The thermal radiation of a heater for crystal is weakened by the heat screen, and the thermal radiation force of the heater for a solid-liquid interface can be reduced by the heat screen, so that the vertical temperature gradient of melted silicon can be increased to a certain extent. Meanwhile, after the heat screen is adopted, the blowing of argon (nitrogen) airflow for the solid-liquid interface can be enhanced, and the function of using argon (nitrogen) airflow to carry crystallizing latent heat can be improved, so that the heat shielding device is beneficial to single crystal growth, the crystallization rate is accelerated, and the pulling rate is increased.
Description
Technical field
The present invention relates to the monocrystalline silicon production technical field, specifically belong to heat shield for single crystal furnace and cover device.
Background technology
Current, silicon materials in semiconductor applications and field of solar energy still in occupation of main status.Along with development of science and technology and development of technology, unicircuit and manufacture of solar cells technology have all proposed new requirement to silicon materials, and the growing technology of major diameter, high quality silicon single crystal becomes the research and development focus of current field of semiconductor materials and field of solar energy.
In recent years, the silicon materials processing technology has obtained many impressive progresses.One of most important progress in silicon crystal growth aspect is that 12 inches silicon monocrystal growth technology are ripe.The main silicon single-crystal manufacturer in the world comprises SHIN-ETSU HANTOTAI, SUMCO; MEMC, watt gram etc. all adopts the single crystal growing furnace that is suitable for 12 inches silicon monocrystal growths, mostly adopts magnetic field Czochralski method; Every stove charge reaches the 300-350 kilogram, and main application 28 or 32 inches crucibles and thermal field carry out silicon single-crystal production.Cutting edge technology comprises both at home and abroad at present: 1) thermal field designing technique, promptly utilize computer modeling technique, and the temperature of thermal field and the distribution situation of gradient thereof reach the improvement of crystal mass during the analogue crystals growth;
2) heat shielding technology promptly utilizes heat shielding to reduce thermal radiation and calorific loss, reduces thermal convection, accelerates the volatilization of vaporised gas, accelerates the crystalline cooling; 3) double-heater technology is promptly utilized, and two well heaters guarantee that solid-liquid interface has suitable thermograde down; 4) magnetic field technique, i.e. the convection current of applying a magnetic field control melt suppresses the fluctuating of bath surface temperature and the concentration of reduction silicon single crystal inside clearance oxygen; 5) seed crystal technology because the weight of large diameter silicon monocrystal is more and more heavy, is developed secondary and is grabbed shoulder technology, no necking down seed crystal technology etc.In addition, also develop the charging again and the PNEUMATICALLY CONTROLLED PERISTALTIC SOLIDS of pulling of crystals.
Another impressive progress of silicon crystal growth aspect is effectively to have controlled the formation of primary particle (COP) defective in the crystal.The size of COP defective exists in 8 inches silicon chips about 100 nanometers already, but along with line widths shrink to 100 nanometers when following, this problem becomes more outstanding.Because the COP defective can cause the degeneration and the isolated inefficacy of gate oxide integrity, MEMC company has at first developed this technology, and other main wafer fabrication plant merchants also develop similar techniques afterwards.These technology are according to the optimum temps at best pulling rate and solid-liquid interface place, on the whole length of crystal ingot and diameter, suppress the formation of two types of height injurous defects.Use the silicon polished requirement that can satisfy device fully of silicon single-crystal preparation of these technology drawings, thereby improved the yield rate of device greatly, reduced cost.
Summary of the invention
The purpose of this invention is to provide a kind of heat shield for single crystal furnace and cover device,, also weakened solid-liquid interface thermal radiation dynamics simultaneously, increased the longitudinal temperature gradient of molten silicon to a certain extent because heat shielding has weakened well heater to the crystalline thermal radiation.After adopting heat shielding simultaneously, strengthened argon (nitrogen) air-flow, strengthened the effect that argon (nitrogen) air-flow carries crystallization latent heat and therefore helped single crystal growing, and can improve crystallization rate, and then improved pulling rate the brushing of solid-liquid interface.
Technical scheme of the present invention is following:
Heat shield for single crystal furnace covers device, includes heat shielding outside silicon single crystal bar, and the upper end of heat shielding is connected with the heat shielding loam cake; The below of heat shielding loam cake is provided with heat-preservation cylinder; Said heat shielding is made up of heat shielding shell, heat shielding inner casing and intermediary heat shielding thermal insulation layer, and it is round table-like that heat shielding is, and have centre gangway; Angle between heat shielding and the heat shielding loam cake is 40-50 °, and the longitudinal section of centre gangway is trapezoidal.
Described going up on the heat-preservation cylinder inwall is fixed with nut, screwed togather screw rod in the nut, and the upper end jacking of screw rod is in heat shielding loam cake lower end.
Angle between described heat shielding and the heat shielding loam cake is 45 °.
Temperature of the present invention field is meant the temperature distribution in the hot system, and is of crucial importance to the crystalline growth.Warm field is divided into warm of static state and dynamically warm field.Temperature field when not carrying out crystal growth is called static temperature field, is decided by the shape and size of well heater and heat-insulation system.Temperature field when carrying out crystal growth is referred to as dynamically temperature field.Have crystallization latent heat to discharge in the crystallisation process, pulling rate is fast more, and crystallization rate is high more, and the latent heat of release is many more.Flowing of the variation of crystal diameter, length and bushing position and melt all produces bigger influence to the temperature field.Because the factor of this respect has changed static temperature, the dynamic following test that therefore will pass through crystal pulling technique is revised static temperature, could make dynamic warm the requirement of satisfying crystal growth.In melt, longitudinal temperature gradient suitably increases, and helps the thermal conduction of crystallization latent heat in distributing and carries out, and helps carrying out smoothly of crystallisation process.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of heat shielding of the present invention.
Embodiment
Referring to accompanying drawing, heat shield for single crystal furnace covers device, includes heat shielding 2 outside silicon single crystal bar 1; The upper end of heat shielding 2 is connected with heat shielding loam cake 3, and the below of heat shielding loam cake 3 is provided with heat-preservation cylinder 4, and heat shielding 2 is made up of heat shielding shell 5, heat shielding inner casing 6 and intermediary heat shielding thermal insulation layer 7; Heat shielding 2 is round table-like, and has centre gangway 8, and the longitudinal section of centre gangway 8 is trapezoidal; Be fixed with nut 9 on last heat-preservation cylinder 4 inwalls; Screwed togather screw rod 10 in the nut 9, the upper end jacking of screw rod 10 is in heat shielding loam cake 3 lower ends, and the angle between heat shielding 2 and the heat shielding loam cake 3 is 45 °.
Claims (3)
1. heat shield for single crystal furnace covers device, it is characterized in that: include heat shielding outside silicon single crystal bar, the upper end of heat shielding is connected with the heat shielding loam cake; The below of heat shielding loam cake is provided with heat-preservation cylinder; Said heat shielding is made up of heat shielding shell, heat shielding inner casing and intermediary heat shielding thermal insulation layer, and it is round table-like that heat shielding is, and have centre gangway; Angle between heat shielding and the heat shielding loam cake is 40-50 °, and the longitudinal section of centre gangway is trapezoidal.
2. heat shield for single crystal furnace according to claim 1 covers device, it is characterized in that: described going up on the heat-preservation cylinder inwall is fixed with nut, screwed togather screw rod in the nut, and the upper end jacking of screw rod is in heat shielding loam cake lower end.
3. heat shield for single crystal furnace according to claim 1 covers device, it is characterized in that: the angle between described heat shielding and the heat shielding loam cake is 45 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102057039A CN102758246A (en) | 2012-06-20 | 2012-06-20 | Heat shielding device for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102057039A CN102758246A (en) | 2012-06-20 | 2012-06-20 | Heat shielding device for single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102758246A true CN102758246A (en) | 2012-10-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012102057039A Pending CN102758246A (en) | 2012-06-20 | 2012-06-20 | Heat shielding device for single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102758246A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
| CN112481694A (en) * | 2019-09-11 | 2021-03-12 | 上海新昇半导体科技有限公司 | Reflecting screen device for crystal growth |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001270797A (en) * | 2000-03-28 | 2001-10-02 | Wacker Nsce Corp | Silicon single crystal manufacturing equipment |
| JP2005104833A (en) * | 2004-11-05 | 2005-04-21 | Ibiden Co Ltd | Gas rectifying member for single crystal pulling apparatus |
| CN202139324U (en) * | 2011-07-13 | 2012-02-08 | 西安华晶电子技术股份有限公司 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
-
2012
- 2012-06-20 CN CN2012102057039A patent/CN102758246A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001270797A (en) * | 2000-03-28 | 2001-10-02 | Wacker Nsce Corp | Silicon single crystal manufacturing equipment |
| JP2005104833A (en) * | 2004-11-05 | 2005-04-21 | Ibiden Co Ltd | Gas rectifying member for single crystal pulling apparatus |
| CN202139324U (en) * | 2011-07-13 | 2012-02-08 | 西安华晶电子技术股份有限公司 | Graphite thermal field system of upward-exhausting thermal field type czochralski silicon mono-crystal furnace |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172585A (en) * | 2018-11-12 | 2020-05-19 | 上海新昇半导体科技有限公司 | Reflecting screen of single crystal growth furnace and single crystal growth furnace |
| CN112481694A (en) * | 2019-09-11 | 2021-03-12 | 上海新昇半导体科技有限公司 | Reflecting screen device for crystal growth |
| CN112481694B (en) * | 2019-09-11 | 2022-04-05 | 上海新昇半导体科技有限公司 | Reflecting screen device for crystal growth |
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Application publication date: 20121031 |