CN102752559A - High-dynamic range image sensing circuit and high-dynamic range image reading method - Google Patents
High-dynamic range image sensing circuit and high-dynamic range image reading method Download PDFInfo
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Abstract
The invention provides a high-dynamic range image sensing circuit with adaptive conversion gain and a high-dynamic range image reading method. The high-dynamic range image sensing circuit comprises a variable capacitor. The capacitance value of the variable capacitor is adjusted according to sensed lightness or internal feedback control so as to adaptively adjust the conversion gain when a signal representing a pixel image sensed by an image sensing element is read. When signals are read per period, the signals within different dynamic ranges can be respectively read for more than two times so as to enhance the accuracy of the signals.
Description
Technical field
The present invention relates to a kind of high dynamic-range image sensing circuit and high dynamic-range image read method, be meant a kind of high dynamic-range image sensing circuit and high dynamic-range image read method that utilizes the adjustment variable capacitance to read conversion gain with the accommodation image especially.
Background technology
Fig. 1 shows United States Patent (USP) the 7th, 075, No. 049 disclosed a kind of high dynamic-range image sensing element circuit diagram.As shown in Figure 1; The high dynamic-range image sensing element is compared to traditional four transistors (4T) Image Sensor; (dual conversion gain transistor is DCGT) with capacitor C A, in order to switch the conversion gain of reading signal to increase a dual conversion gain transistor.Fig. 2 A and 2B, and Fig. 2 C and 2D are shown in respectively among Fig. 1, the high dynamic-range image sensing element under low-light level and high brightness, the accurate sketch map in position of each node, and describe the transfer of high dynamic-range image sensing element sense charge when operation.
Under the low-light level environment; Shown in Fig. 2 A and 2B, the sense charge that light sensing unit pd is produced is less, and the capacitor fixing of diffusion node (the floating diffusion node) fd that floats; By not conducting DCGT; Make integral capacitor less, thereby conversion gain is bigger, such as the unsteady diffusion charge position among Fig. 2 B accurate signal.Otherwise under high-brightness environment, shown in Fig. 2 C and 2D, the sense charge that light sensing unit pd is produced is more, by conducting DCGT, make integral capacitor bigger, thereby conversion gain is less, such as the unsteady diffusion charge position among Fig. 2 D accurate signal.The image that thus aforementioned two signals can be synthesized after treatment HDR.
The shortcoming of this prior art is that conversion gain that is to say that for two kinds of fixing selections high-conversion-gain and low conversion gain are all fixing.
In addition, the U.S. the 7th, 518; No. 143 disclosed a kind of high dynamic-range image sensing elements of patent case, though can adjust conversion gain, must be on transfering transistor TG; Apply three sections voltages, and second section voltage is the voltage that adopts sense charge to accumulate out.
In view of this, the present invention proposes a kind of high dynamic-range image sensing circuit and high dynamic-range image read method that utilizes the adjustment variable capacitance to read conversion gain with the accommodation image promptly to the deficiency of above-mentioned prior art.
Summary of the invention
One of the object of the invention is to overcome the deficiency and the defective of prior art, proposes a kind of high dynamic-range image sensing circuit.
Another purpose of the present invention is, proposes a kind of high dynamic-range image sensing element.
Another object of the present invention is, proposes a kind of high dynamic-range image transducer.
Still a further object of the present invention is, proposes a kind of high dynamic-range image read method.
For reaching above purpose; With regard to one of them viewpoint, the present invention provides a kind of high dynamic-range image sensing circuit, comprises: an Image Sensor is formed at one first conductivity type substrate; Comprise: a light sensing unit, in order to receive the light signal to produce and to store sense charge; One unsteady diffusion node is in order to store unsteady diffusion charge; One transfer diverter switch is coupled to this light sensing unit and is somebody's turn to do and floats between the diffusion node, and this sense charge of part is to be somebody's turn to do the diffusion charge of floating to shift at least; At least one variable capacitance receives an adjustment voltage to adjust the capacitance of this variable capacitance; An and dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal; Whether to electrically connect this unsteady diffusion node and this variable capacitance, the gain when reading to change this unsteady diffusion charge according to this conversion gain signal decision; And one signal read circuit, couple with this Image Sensor, convert a signal into the diffusion charge of should floating, represent a pixel image of this Image Sensor institute sensing.
With regard to another viewpoint, the present invention provides a kind of high dynamic-range image sensing element, comprises: a light sensing unit, in order to receive the light signal to produce and to store sense charge; One unsteady diffusion node is in order to store unsteady diffusion charge; One transfer diverter switch is coupled to this light sensing unit and is somebody's turn to do and floats between the diffusion node, and this sense charge of part is to be somebody's turn to do the diffusion charge of floating to shift at least; At least one variable capacitance receives an adjustment voltage to adjust this variable capacitance; An and dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal; Whether to electrically connect this unsteady diffusion node and this variable capacitance, the gain when reading to change this unsteady diffusion charge according to this conversion gain signal decision.
With regard to another viewpoint; The present invention provides a kind of high dynamic-range image transducer; Comprise: an Image Sensor matrix comprises: a plurality of Image Sensors are arranged as a plurality of row and a plurality of row; This Image Sensor comprises: a light sensing unit, in order to receive the light signal to produce and to store sense charge; One unsteady diffusion node is in order to store unsteady diffusion charge; One transfer diverter switch is coupled to this light sensing unit and is somebody's turn to do and floats between the diffusion node, and this sense charge of part is to be somebody's turn to do the diffusion charge of floating to shift at least; At least one variable capacitance receives an adjustment voltage to adjust the capacitance of this variable capacitance; An and dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal; Whether to electrically connect this unsteady diffusion node and this variable capacitance, the gain when reading to change this unsteady diffusion charge according to this conversion gain signal decision; And one signal read circuit, couple with this Image Sensor, convert a signal into the diffusion charge of should floating, represent a pixel image of this Image Sensor institute sensing; One simulates to digital conversion circuit, reads circuit with this signal and couples, its reception and to change this signal be a digitized video signal; And an image-processing circuit, simulate to digital conversion circuit with this and to couple, to handle this signal.
In an embodiment of above high dynamic-range image transducer, this image-processing circuit is feedback this conversion gain signal of control maybe should adjustment voltage.In another embodiment, this high dynamic-range image transducer more includes a detected light intensity decision circuitry, its detected light intensity and control maybe this adjustment voltage of this conversion gain signal.
With regard to a viewpoint again, the present invention provides a kind of high dynamic-range image read method, comprises: receive the light signal to produce and to store sense charge; According to a transfer signal, shifting at least, part sense charge to the diffusion node of floating is a unsteady diffusion charge; According to a conversion gain signal, be electrically connected to a variable capacitance with the decision diffusion node of whether should floating, the gain when reading to change this unsteady diffusion charge, wherein, this variable capacitance is adjusted voltage to determine the capacitance of this variable capacitance according to one; Reading this unsteady diffusion charge is first signal, represents a pixel image of this Image Sensor institute sensing.
Above image sensing circuit, high dynamic-range image sensing element, image sensor, with image reading method in, this variable capacitance can comprise: be formed at the second conductivity type doped region in this first conductivity type substrate; And be formed at least one pole plate on this first conductivity type substrate, receive and should adjust voltage, to adjust the capacitance of this variable capacitance; Wherein, Area through this adjustment voltage and this pole plate; Determining the capacitance of this variable capacitance, or this second conductivity type doped region is divided into a plurality of zones, and received by this pole plate should adjustment voltage through this pole plate; Make these a plurality of zones form at least a electric connection state down, to adjust the capacitance of this variable capacitance in bias state.
Above image sensing circuit, high dynamic-range image sensing element, image sensor, with image reading method in, can read this unsteady diffusion charge respectively is first signal and second signal; Wherein, reading respectively at this unsteady diffusion node and this variable capacitance of this first signal and this second signal electrically connects when not being connected for it.
Explain in detail through specific embodiment below, when the effect that is easier to understand the object of the invention, technology contents, characteristics and is reached.
Description of drawings
Fig. 1 shows United States Patent (USP) the 7th, 075, No. 049 disclosed a kind of high dynamic-range image sensing element circuit diagram;
Fig. 2 A and 2B, and Fig. 2 C and 2D are shown in respectively among Fig. 1, the high dynamic-range image sensing element under low-light level and high brightness, each node the position accurate sketch map;
Fig. 3 A-3L shows first embodiment of the present invention;
Fig. 4 A-4B shows second embodiment of the present invention;
Fig. 5 A-5F shows the 3rd embodiment of the present invention;
Fig. 6 shows the 4th embodiment of the present invention;
Fig. 7 shows circuit system embodiment of the present invention;
Fig. 8 shows that can also establish a detected light intensity decision circuitry 74 in addition controls adjustment conversion gain signal or adjustment voltage.
Symbol description among the figure
10 Image Sensors
20 signals read circuit
Sampling of 21 replacement signals and holding circuit
Sampling of 22 image signals and holding circuit
71 Image Sensor matrixes
72 simulate to digital conversion circuit
73 image-processing circuits
74 detected light intensity decision circuitry
C1, C2 electric capacity
The CA variable capacitance
The Cd diffusion capacitance
CR replacement signal sampling/maintenance electric capacity
The CS1 first image signal sampling/maintenance electric capacity
The CS2 second image signal sampling/maintenance electric capacity
The DCGT dual conversion gain transistor
The Fd diffusion node of floating
Pd light detecting unit
RSEL column selection transistor
RST reset transistor SF source follower
SHR replacement signal sampling transistor
The SHS1 first image signal sampling transistor
The SHS2 second image signal sampling transistor
The TG transfering transistor
The VC1 first adjustment voltage
The VC2 second adjustment voltage
The Vdd builtin voltage
Embodiment
Graphic all genus signal among the present invention mainly is intended to represent the function relation between each device and each element, does not then according to scale as for shape, thickness and width.
Fig. 3 A-3L shows first embodiment of the present invention.The high dynamic-range image sensing circuit comprises Image Sensor 10 and is formed at the first conductivity type substrate, be for example and without limitation to the P type semiconductor substrate, and signal reads circuit 20.See also Fig. 3 A, show the circuit diagram of present embodiment, wherein, Image Sensor comprises: light sensing unit pd is for example and without limitation to optical diode, photogate or optical conductor, in order to receive the light signal to produce and to store sense charge; Unsteady diffusion node fd is in order to store unsteady diffusion charge; Shifting diverter switch, is transfering transistor TG in the present embodiment, is coupled between light sensing unit pd and the unsteady diffusion node fd, and the part sense charge is the diffusion charge of floating to shift at least; Variable capacitance CA adjusts capacitance such as but not limited to being coupled to adjustment voltage VC1 and VC2; The dual conversion gain diverter switch; Be a dual conversion gain transistor DCGT in the present embodiment; Be coupled to and float between diffusion node fd and the variable capacitance CA; And receive the conversion gain signal, and whether electrically connect float diffusion node fd and variable capacitance CA with decision, read the gain of the diffusion charge of floating with change; Reset transistor RST; In the present embodiment; Reset transistor RST and dual conversion gain transistor DCGT are parallel to the diffusion node fd that floats, and reset transistor RST is accurate to preset potential in order to the position of the unsteady diffusion node fd that resets, is for example and without limitation to builtin voltage Vdd; Source follower SF is coupled to the diffusion node fd that floats, and converts signal into the diffusion charge of will floating, and represents a pixel image of this Image Sensor institute sensing, and in the present embodiment, the diffusion charge of floating can appear with voltage form in unsteady diffusion node fd; And column selection transistor RSEL, being coupled to source follower SF, column selection transistor RSEL is by the control of column selection signal, to enable this column selection transistor RSEL and to receive signal.
Shown in Fig. 3 A; The high dynamic-range image sensing circuit also comprises signal and reads circuit 20; Comprise: sampling of replacement signal and holding circuit 21 have replacement signal sampling transistor SHR and replacement signal sampling/maintenance capacitor C R, with sampling and storage replacement signal; Wherein, the accurate generation in position of the unsteady diffusion node fd after the replacement signal is reset by source follower SF conversion; And image signal sampling and holding circuit 22, such as but not limited to having: the first image signal sampling transistor SHS1 and the first image signal sampling/maintenance capacitor C S1, in order to sampling for the first time and storage signal; And second the image signal sampling transistor SHS2 and the second image signal sampling/maintenance capacitor C S2, in order to sampling for the second time and store signal.
See also Fig. 3 B; The Image Sensor schematic top plan view of displayed map 3A on the P type semiconductor substrate; Variable capacitance CA is for example and without limitation to shown in Fig. 3 B; Be included in the diffusion capacitance Cd that the N type doped region in the P type substrate forms, and on P type substrate, be respectively coupled to adjustment voltage VC1 and VC2, by formed capacitor C 1 of two-plate and C2.Fig. 3 C and 3D are the cross-sectional schematic of the AA ' hatching line of Fig. 3 B, and among the displayed map 3B, how the electric capacity connection status that is produced when different adjustment voltage VC1 and VC2 utilizes adjustment voltage VC1 and VC2 to adjust variable capacitance CA to show present embodiment respectively.Fig. 3 C shows as adjustment voltage VC1 and does not apply a voltage to pole plate with VC2 or the voltage that applied makes the pole plate below not produce the situation in N type district that the capacitance that this moment, the pole plate below produced is zero, so the capacitance of variable capacitance CA is diffusion capacitance Cd in substrate.Fig. 3 D show when adjustment voltage VC1 and VC2 apply appropriate voltage in pole plate so that pole plate below generation N type district; This capacitance that makes pole plate below in substrate, produce is respectively C1 and C2, and the capacitance of variable capacitance CA become diffusion capacitance Cd, C1, with the summation of C2.Utilize different adjustment voltage VC1 and VC2, with adjustment variable capacitance CA, when two gain conversions transistor DCGT conducting, the diffusion node fd that floats can electrically connect with variable capacitance CA, reads the gain of unsteady diffusion charge with change.
See also Fig. 3 E, show among first embodiment, a kind of signal sketch map of read method of high dynamic-range image.In the present embodiment, at first an accurate standard of extremely presetting of the unsteady diffusion node of reset transistor RST replacement for example is builtin voltage Vdd; With replacement signal sampling transistor SHR conducting, so that replacement signal sampling/maintenance capacitor C R can receive builtin voltage Vdd with as the replacement signal.Then transfering transistor TG is according to shifting signal, and shifting at least, the extremely unsteady diffusion node fd of part sense charge is the diffusion charge of floating; Wherein, sense charge is for being received by light sensing unit pd behind the light signal to produce and to be stored in light sensing unit pd.Then according to the conversion gain signal, be electrically connected to variable capacitance CA with the decision diffusion node fd that whether will float.In illustrated example; For example; The conversion gain signal is that decision is with dual conversion gain transistor DCGT conducting; Be electrically connected to variable capacitance CA and change the gain of reading the diffusion charge of floating with the diffusion node fd that will float, wherein, variable capacitance CA is according to the capacitance of adjustment voltage VC1 and VC2 decision variable capacitance CA; Shown in figure, when VC1 and VC2 were 0 or 1 various combination, the capacitance of variable capacitance CA can be different results such as Cd, Cd+C1, Cd+C2 or Cd+C1+C2.When in image signal sampling and the holding circuit 22 during the first image signal sampling transistor SHS1 conducting, just can read the diffusion charge of floating is signal, deposits the first image signal sampling/maintenance capacitor C S1 in.
Fig. 3 F-3L shows among first embodiment; When the conversion gain signal determines dual conversion gain transistor DCGT conducting or not conducting; And adjustment voltage VC1 and VC2 be when being 0 or 1 various combination, the accurate sketch map in position of each node, and show electric charge, position standard and capacitance relation; Wherein transverse axis is represented the position, and the longitudinal axis is represented voltage level.Fig. 3 F display light sensing cell pd receives the light signal of illustrating like dotted arrow, produces and store sense charge.Fig. 3 G shows after transfering transistor TG is according to the conducting of transfer signal, shifts the extremely unsteady diffusion node fd of sense charge and is unsteady diffusion charge.When Fig. 3 H shows the decision of conversion gain signal with not conducting of dual conversion gain transistor DCGT; After transfering transistor TG is according to the not conducting of transfer signal; Be stored in the unsteady diffusion charge of the diffusion node fd that floats; Cause the accurate change in diffusion node fd position of floating, for example illustrate that by the signal S1 among the figure it can be used as a signal that can be read.
When conversion gain signal decision with dual conversion gain transistor DCGT conducting, with reading signal, such as Fig. 3 I-3L signal; Fig. 3 I-3L representes to work as VC1 respectively and VC2 is 0,0,0,1,1; 0, with 1,1 o'clock, variable capacitance CA was respectively Cd, Cd+C2, Cd+C1 and Cd+C1+C2; The position of corresponding unsteady diffusion node fd is accurate, for example by the signal S2 among each figure, S3, S4, illustrate that with S5 it can be read respectively.
More than show,, can read the not accurate signal of coordination,, make the image that is read more accurate with under different sensitization conditions according to the present invention.
Fig. 4 A-4B shows second embodiment of the present invention, and different with first embodiment is that reset transistor RST and dual conversion gain transistor DCGT are series at the diffusion node fd that floats.In addition, variable capacitance CA is included in diffusion capacitance Cd1 and the Cd2 that the N type doped region in the P type substrate forms, and on P type substrate; Be coupled to the capacitor C 1 of the pole plate formation of adjustment voltage VC1, be noted that, in the present embodiment; The P type substrate of pole plate and pole plate below is separated diffusion capacitance Cd1 and Cd2, so; When VC1 is that 0 or 1 not coordination is punctual, the capacitance of variable capacitance CA is different results such as Cd1 or Cd1+C1+Cd2.
Fig. 5 A-5F shows the 3rd embodiment of the present invention; Different with first embodiment is in the present embodiment, to be to store two groups of electric charge data during reading signal; That is; The first image signal sampling transistor SHS1 in conducting image signal sampling and holding circuit 22 reads after the diffusion charge of floating is stored in first image signal sampling/the maintenances capacitor C S1 as signal, again the conducting image signal take a sample and holding circuit 22 in the second image signal sampling transistor SHS2; Reading the diffusion charge of floating is stored in the second image signal sampling/maintenance capacitor C S2 as signal; And when reading for twice, the diffusion node fd that will float respectively is connected and is not connected with variable capacitance CA, to obtain the not accurate data of coordination.
Fig. 6 shows the 4th embodiment of the present invention, and different with second embodiment is that present embodiment shows that reset transistor RST and dual conversion gain transistor DCGT are connected in unsteady diffusion node fd.
Fig. 7 shows circuit system embodiment of the present invention; Show a kind of high dynamic-range image transducer; Comprise: Image Sensor matrix 71, simulate to digital conversion circuit 72, with image-processing circuit 73, this high dynamic-range image transducer is such as but not limited to being integrated into an integrated circuit.Wherein, Image Sensor matrix 71 comprises a plurality of Image Sensors, is arranged as a plurality of row and a plurality of row; And signal reads circuit.Image Sensor and signal read circuit such as aforesaid embodiment description.Simulate to digital conversion circuit 72, read circuit with signal and couple, its reception and conversion signal are the digitized video signal.Image-processing circuit 73 couples with simulating to digital conversion circuit, to handle signal.
Can know that by above content of the present invention the present invention can adjust variable capacitance CA according to different sensitization conditions the difference of ambient brightness (for example according to), and dynamically obtains the accurate signal of multiple not coordination, so can produce image more accurately.Certainly, as desire to adjust variable capacitance CA, then must judge the luminous intensity that is detected according to different sensitization conditions, and according to the adjustment voltage of detecting result with decision conversion gain signal or electric capacity.This can be feedback according to inside by image-processing circuit 73 and control decision; For example according to relatively the deciding of first signal and one or more critical value (like Fig. 7), or establish the adjustment voltage (like Fig. 8) that a detected light intensity decision circuitry 74 is come control transformation gain signal or electric capacity in addition.
Below to preferred embodiment the present invention being described, is the above, be merely to make those skilled in the art be easy to understand content of the present invention, and be not to be used for limiting interest field of the present invention.Under same spirit of the present invention, those skilled in the art can think and various equivalence changes.For example, substrate of the present invention is not limited to the P type semiconductor substrate, can be N type semiconductor substrate or other semiconductor substrate, as long as corresponding change doped region; For another example, shown in each embodiment circuit, can insert the element that does not influence the main meaning of signal, like other switch etc.; And for example, look it by vertical view, pole plate shape and quantity are not limited to rectangle as shown in the figure and one or two, can also be other arbitrary shape and other quantity; And for example, the adjustment signal is not limited to 0 or 1 two kind of selection, can also be the digital signal or an analog signal of a plurality of characters.Therefore, scope of the present invention should contain above-mentioned and other all equivalence variations.
Claims (20)
1. a high dynamic-range image sensing circuit is characterized in that, comprises:
One Image Sensor is formed at one first conductivity type substrate, comprising:
One light sensing unit is in order to receive the light signal to produce and to store sense charge;
One unsteady diffusion node is in order to store unsteady diffusion charge;
One shifts diverter switch, and this light sensing unit is coupled to this unsteady diffusion node, and shifting at least with this light sensing unit certainly, this sense charge of part to the diffusion node of should floating is the diffusion charge of should floating;
At least one variable capacitance receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal, to be somebody's turn to do float diffusion node and this variable capacitance, the gain when reading to electrically connect to change this unsteady diffusion charge according to this conversion gain signal; And
One signal reads circuit, couples with this Image Sensor, converts a signal into the diffusion charge of should floating, and represents a pixel image of this Image Sensor institute sensing.
2. high dynamic-range image sensing circuit as claimed in claim 1, wherein, this variable capacitance comprises:
Be formed at the second conductivity type doped region in this first conductivity type substrate; And
Be formed at least one pole plate on this first conductivity type substrate, receive and to adjust voltage, to adjust the capacitance of this variable capacitance;
Wherein, Area through this adjustment voltage and this pole plate; Determining the capacitance of this variable capacitance, or this second conductivity type doped region is divided into a plurality of zones, and received by this pole plate should adjustment voltage through this pole plate; Make these a plurality of zones form at least a electric connection state down, to adjust the capacitance of this variable capacitance in bias state.
3. high dynamic-range image sensing circuit as claimed in claim 1; Wherein, This Image Sensor also comprises a reset transistor; Be coupled to this unsteady diffusion node jointly with this dual conversion gain diverter switch, this reset transistor is accurate accurate to a preset position in order to the position of this unsteady diffusion node of resetting.
4. high dynamic-range image sensing circuit as claimed in claim 1, wherein, this light sensing unit comprises an optical diode, a photogate or an optical conductor.
5. high dynamic-range image sensing circuit as claimed in claim 3; Wherein, this Image Sensor also comprises the one source pole follower, is coupled to this unsteady diffusion node; Convert a signal into the diffusion charge of should floating, represent a pixel image of this Image Sensor institute sensing.
6. high dynamic-range image sensing circuit as claimed in claim 5; Wherein, This Image Sensor also comprises a column selection transistor, is coupled to this source follower, and this column selection transistor is controlled by a column selection signal; Wherein this column selection signal enables this column selection transistor, to receive this signal.
7. high dynamic-range image sensing circuit as claimed in claim 5, wherein, this signal reads circuit, comprising:
One replacement signal sampling and holding circuit have replacement signal sampling transistor and replacement signal sampling/maintenances electric capacity, and with sampling and store a replacement signal, a standard of the unsteady diffusion node of this replacement signal after by this this replacement of source follower conversion produces; And
Sampling of one image signal and holding circuit have:
The first image signal sampling transistor and the first image signal sampling/maintenance electric capacity are in order to take a sample and to store this signal for the first time; And
The second image signal sampling transistor and the second image signal sampling/maintenance electric capacity are in order to take a sample and to store this signal for the second time.
8. a high dynamic-range image sensing element is characterized in that, comprises:
One light sensing unit is in order to receive the light signal to produce and to store sense charge;
One unsteady diffusion node is in order to store unsteady diffusion charge;
One shifts diverter switch, and this light sensing unit is coupled to this unsteady diffusion node, and shifting at least with this light sensing unit certainly, this sense charge of part to the diffusion node of should floating is the diffusion charge of should floating;
At least one variable capacitance receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal, to be somebody's turn to do float diffusion node and this variable capacitance, the gain when reading to electrically connect to change this unsteady diffusion charge according to this conversion gain signal.
9. high dynamic-range image sensing element as claimed in claim 8, wherein, this variable capacitance comprises:
Be formed at the second conductivity type doped region in this first conductivity type substrate; And
Be formed at least one pole plate on this first conductivity type substrate, receive and to adjust voltage, to adjust the capacitance of this variable capacitance;
Wherein, Area through this adjustment voltage and this pole plate; Determining the capacitance of this variable capacitance, or this second conductivity type doped region is divided into a plurality of zones, and received by this pole plate should adjustment voltage through this pole plate; Make these a plurality of zones form at least a electric connection state down, to adjust the capacitance of this variable capacitance in bias state.
10. high dynamic-range image sensing element as claimed in claim 8; Wherein, Also comprise a reset transistor, be coupled to this unsteady diffusion node jointly with this dual conversion gain diverter switch, this reset transistor is accurate accurate to a preset position in order to the position of this unsteady diffusion node of resetting.
11. high dynamic-range image sensing element as claimed in claim 8, wherein, this light sensing unit comprises an optical diode, a photogate or an optical conductor.
12. high dynamic-range image sensing element as claimed in claim 10 wherein, also comprises the one source pole follower, is coupled to this unsteady diffusion node, converts a signal into the diffusion charge of should floating, and represents a pixel image of this Image Sensor institute sensing.
13. a high dynamic-range image transducer is characterized in that, comprises:
One Image Sensor matrix comprises:
A plurality of Image Sensors are arranged as a plurality of row and a plurality of row, and this Image Sensor comprises:
One light sensing unit is in order to receive the light signal to produce and to store sense charge;
One unsteady diffusion node is in order to store unsteady diffusion charge;
One shifts diverter switch, and this light sensing unit is coupled to this unsteady diffusion node, and shifting at least with this light sensing unit certainly, this sense charge of part to the diffusion node of should floating is the diffusion charge of should floating;
At least one variable capacitance receives an adjustment voltage, and according to this adjustment voltage to adjust the capacitance of this variable capacitance; And
One dual conversion gain diverter switch; Be coupled between this unsteady diffusion node and this variable capacitance; And receive a conversion gain signal, to electrically connect this unsteady diffusion node and this variable capacitance according to this conversion gain signal, the gain when reading to change this unsteady diffusion charge; And
One signal reads circuit, couples with this Image Sensor, converts a signal into the diffusion charge of should floating, and represents a pixel image of this Image Sensor institute sensing;
One simulates to digital conversion circuit, reads circuit with this signal and couples, its reception and to change this signal be a digitized video signal; And
One image-processing circuit is simulated to digital conversion circuit with this and to be coupled, to handle this signal.
14. high dynamic-range image transducer as claimed in claim 13, wherein, this variable capacitance comprises:
Be formed at the second conductivity type doped region in this first conductivity type substrate; And
Be formed at least one pole plate on this first conductivity type substrate, receive and to adjust voltage, to adjust this variable capacitance;
Wherein, Area through this adjustment voltage and this pole plate; Determining the capacitance of this variable capacitance, or this second conductivity type doped region is divided into a plurality of zones, and received by this pole plate should adjustment voltage through this pole plate; Make these a plurality of zones form at least a electric connection state down, to adjust the capacitance of this variable capacitance in bias state.
15. high dynamic-range image transducer as claimed in claim 13, wherein, this image-processing circuit is feedback this conversion gain signal of control maybe should adjustment voltage.
16. high dynamic-range image transducer as claimed in claim 13 wherein, also includes a detected light intensity decision circuitry, its detected light intensity and control maybe this adjustment voltage of this conversion gain signal.
17. high dynamic-range image transducer as claimed in claim 13, wherein, this signal reads circuit, comprising:
Sampling of one replacement signal and holding circuit have replacement signal sampling transistor and replacement signal sampling/maintenance electric capacity, to take a sample and to store a replacement signal; And
Sampling of one image signal and holding circuit have:
The first image signal sampling transistor is in order to take a sample and to store this signal for the first time; And
The second image signal sampling transistor is in order to take a sample and to store this signal for the second time.
18. a high dynamic-range image read method is characterized in that, comprises:
Receive the light signal to produce and to store sense charge;
According to a transfer signal, shifting at least, part sense charge to the diffusion node of floating is a unsteady diffusion charge;
According to a conversion gain signal, be electrically connected to a variable capacitance with the diffusion node of should floating, the gain when reading to change this unsteady diffusion charge, wherein, this variable capacitance is adjusted voltage to determine the capacitance of this variable capacitance according to one;
Reading this unsteady diffusion charge is first signal, represents a pixel image of institute's sensing.
19. high dynamic-range image read method as claimed in claim 18 wherein, also comprises: reading this unsteady diffusion charge is second signal; Wherein, reading respectively at this unsteady diffusion node and this variable capacitance of this first signal and this second signal electrically connects when not being connected for it.
20. high dynamic-range image read method as claimed in claim 18 wherein, also comprises:
Detected light intensity is to control maybe this adjustment voltage of this conversion gain signal.
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