CN102751161B - Be applied to the semiconductor heating ion migration tube structure of ionic migration spectrum detector - Google Patents

Abstract

The invention relates to a semiconductor heating ion transfer tube structure applied to an ion transfer spectrometer detector, and belongs to the technical field of ion transfer spectrometry. The structure of the semiconductor heating ion transfer tube applied to the ion mobility spectrometer detector includes a ceramic insulating tube body and a lumen enclosed in the ceramic insulating tube body, and the ceramic insulating tube body is covered with a semiconductor electrothermal film. The use of the semiconductor electrothermal film can greatly improve the electrothermal conversion efficiency of the ion transfer tube, thereby reducing the overall power required by the ion transfer tube detector. At the same time, the working temperature of the semiconductor electrothermal film itself can reach above 300 ° C. , can effectively shorten the required time. Moreover, the structure of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector of the present invention has a simple structure, low cost, and a wide range of applications.

Description

Structure of Semiconductor Heated Ion Transfer Tube Applied in Ion Mobility Spectrometer Detector

technical field

The invention relates to the technical field of ion mobility spectrometry, in particular to the technical field of ion mobility spectrometry detection, in particular to a semiconductor heated ion mobility tube structure applied to an ion mobility spectrometer detector.

Background technique

Ion mobility spectrometry detection technology has been widely used in the field of trace trace detection. In particular, portable ion mobility spectrometers play their unique advantages in public security inspections. The ion transfer tube is one of the key components, and its performance determines the performance of the ion mobility spectrometer detector. The control of the heating method and temperature stability of the ion mobility tube is directly related to the power supply and the continuous use time of the ion mobility spectrometer detector.

The traditional ion transfer tube heating method is to heat the ion tube through the electric heating membrane 3 wrapped outside the ion tube. Its structure is shown in Figure 1. The heat transfer route of the ion transfer tube is: conduction from the electric heating diaphragm 3 to the metal tube body 2 of the ion tube, and then conduction from the metal tube body 2 to the ceramic insulating layer 1 in it, so as to add heat to the cavity 4 of the ion transfer tube. warm purpose. Since the electric heating membrane 3 cannot be completely attached to the surface of the metal tube body 2 of the ion transfer tube, there is a certain loss in the process of heat conduction from the electric heating film 3 to the metal tube body 2 of the ion transfer tube. Furthermore, some structural elements for installation and connection are also distributed on the metal tube body 2 of the ion transfer tube, so the insulation measures for the metal tube body 2 of the ion transfer tube cannot be perfected. Therefore, the metal tube body 2 of the ion transfer tube exposed to the outside has a part of heat dissipation loss. The existence of the above two main loss factors determines that the heat conduction efficiency of the electric heating diaphragm heating method is relatively low.

In addition, limited by the heat resistance of the adhesive colloid in the structure of the electric heating film 3 itself, the maximum working temperature of the electric heating film 3 is about 200°C. This makes it necessary to spend a longer cleaning time when the ion transfer tube goes through the cleaning procedure because the temperature in the chamber is not high enough.

Contents of the invention

The purpose of the present invention is to overcome the above-mentioned shortcomings in the prior art, and to provide a method of spraying a semiconductor electrothermal film on the ceramic tube body of the ion transfer tube by using a thermal spraying process, thereby greatly improving the electrothermal conversion efficiency of the ion transfer tube, and further reducing ion transfer. The overall electric energy required by the transfer tube detector. At the same time, the working temperature of the semiconductor electrothermal film itself can reach above 300 ° C. When cleaning the ion transfer tube, it can effectively shorten the time required, and the structure is simple, the cost is low, and the application range is relatively wide. The semiconductor heated ion transfer tube structure applied to the ion mobility spectrometer detector.

In order to achieve the above-mentioned purpose, the semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector of the present invention has the following composition:

The structure of the semiconductor heating ion transfer tube applied to the ion mobility spectrometer detector includes a ceramic insulating tube body and a lumen enclosed in the ceramic insulating tube body, and the ceramic insulating tube body is covered with a semiconductor electrothermal film.

In the semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector, the semiconductor electrothermal film is a tin oxide semiconductor electrothermal film.

In the semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector, the semiconductor electrothermal film is sprayed and formed on the outer surface of the ceramic insulating tube by thermal spraying process.

In the semiconductor heated ion transfer tube structure applied to the ion mobility spectrometer detector, two metal rings are respectively arranged at both ends of the ceramic insulating tube body, and the semiconductor heated ion transfer tube structure passes through the two metal rings. A metal ring is fixedly connected to the structural parts of the ion mobility spectrometer detector.

In the structure of the semiconductor heating ion transfer tube applied to the ion mobility spectrometer detector, the two metal rings are respectively welded and fixed to the two ends of the ceramic insulating tube body.

In the semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector, the semiconductor electrothermal film is covered on the outer surface of the ceramic insulating tube between the two metal rings.

The semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector of this invention is adopted, because it includes a ceramic insulating tube body and a lumen enclosed in the ceramic insulating tube body, and the ceramic insulating tube body is Covered with a semiconductor heating film. The use of the semiconductor electrothermal film can greatly improve the electrothermal conversion efficiency of the ion transfer tube, thereby reducing the overall required power of the ion transfer tube detector. At the same time, the working temperature of the semiconductor electrothermal film itself can reach above 300 ° C. , can effectively shorten the required time. Moreover, the structure of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector of the present invention has a simple structure, low cost, and a wide range of applications.

Description of drawings

Figure 1 is a schematic diagram of the layer structure of a conventional ion transfer tube.

Fig. 2 is a schematic structural diagram of a semiconductor heated ion transfer tube applied to an ion mobility spectrometer detector according to the present invention.

Detailed ways

In order to understand the technical aspects of the present invention more clearly, the following examples are given in detail.

Please refer to FIG. 2 , which is a schematic structural diagram of a semiconductor heated ion transfer tube applied to an ion mobility spectrometer detector according to the present invention.

In one embodiment, the structure of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector includes a ceramic insulating tube body 1 and a lumen 4 enclosed in the ceramic insulating tube body 1, and the ceramic insulating tube body 1 The outer body of the insulating tube is covered with a semiconductor electrothermal film 5 . The semiconductor electric heating film 5 is sprayed with the tin oxide semiconductor electric heating film 5 formed on the outer surface of the ceramic insulating pipe body 1 by a thermal spraying process.

In a preferred embodiment, two metal rings 6 are respectively welded and fixed at both ends of the ceramic insulating tube body 1, and the structure of the semiconductor heating ion transfer tube is fixed through the two metal rings 6 Connected to the structural components of the ion mobility spectrometer detector. The semiconductor electric heating film 5 is covered on the outer surface of the ceramic insulating pipe body 1 between the two metal rings 6 .

In the application of the present invention, the structure of the semiconductor heating ion transfer tube applied to the ion mobility spectrometer detector of the present invention adopts a ceramic welding process to weld two metal rings to both ends of the insulating ceramic tube body of the ion tube. Various structural elements can be built on the metal ring to meet the needs of the installation joint. The tin oxide semiconductor electrothermal film is evenly covered on the outer surface of the insulating ceramic tube body of the ion tube by a thermal spraying process.

The heat transfer route of the ion transfer tube structure thus formed is: the semiconductor electrothermal film is transmitted to the ion tube insulating ceramic tube, and then the insulating ceramic tube heats the ion tube cavity. The link of the metal tube body is missing in the heat transfer link, because it is a semiconductor electrothermal film that is directly sprayed on the surface of the insulating ceramic tube body (the semiconductor electrothermal film and the surface of the insulating ceramic tube body are in a seamless connection state) , so the loss in the heat transfer process is very small. Therefore, the electrothermal conversion efficiency of the heating method of the semiconductor electrothermal film is greatly improved, and the use of the overall electric energy of the detector can be reduced.

At the same time, the working temperature of the semiconductor electrothermal film itself can reach above 300°C. When performing the ion tube cleaning program, the cavity temperature can be set at a higher temperature, so the cleaning time can be shortened a lot.

The semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector of this invention is adopted, because it includes a ceramic insulating tube body and a lumen enclosed in the ceramic insulating tube body, and the ceramic insulating tube body is Covered with a semiconductor heating film. The use of the semiconductor electrothermal film can greatly improve the electrothermal conversion efficiency of the ion transfer tube, thereby reducing the overall required power of the ion transfer tube detector. At the same time, the working temperature of the semiconductor electrothermal film itself can reach above 300 ° C. , can effectively shorten the required time. Moreover, the structure of the semiconductor heated ion transfer tube applied to the ion mobility spectrometer detector of the present invention has a simple structure, low cost, and a wide range of applications.

In this specification, the invention has been described with reference to specific embodiments thereof. However, it is obvious that various modifications and changes can be made without departing from the spirit and scope of the invention. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims (4)

1. A semiconductor heating ion transfer tube structure applied to an ion mobility spectrometer detector, said ion transfer tube structure comprising a ceramic insulating tube body and a lumen surrounded in said ceramic insulating tube body, characterized in that, The outer surface of the ceramic insulating tube is covered with a semiconductor electrothermal film, and the semiconductor electrothermal film is sprayed and formed on the outer surface of the ceramic insulating tube through a thermal spraying process, and two ends of the ceramic insulating tube are respectively provided with two metal rings, and the structure of the semiconductor heating ion transfer tube is fixedly connected to the structural components of the ion mobility spectrometer through the two metal rings. 2. The semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector according to claim 1, characterized in that, the semiconductor electrothermal film is a tin oxide semiconductor electrothermal film. 3. The semiconductor heating ion transfer tube structure applied to an ion mobility spectrometer detector according to claim 1, wherein the two metal rings are respectively welded and fixed to the two ends of the ceramic insulating tube body. 4. The semiconductor heating ion transfer tube structure applied to the ion mobility spectrometer detector according to claim 1, characterized in that, the semiconductor electrothermal film covers the ceramic insulating tube body between the two metal rings On the surface.