CN102739021B - General control chip structure for SCR (semiconductor control rectifier) and IGBT (insulated gate bipolar translator) - Google Patents
General control chip structure for SCR (semiconductor control rectifier) and IGBT (insulated gate bipolar translator) Download PDFInfo
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Abstract
The invention relates to a general control chip structure for an SCR (semiconductor control rectifier) and an IGBT (insulated gate bipolar translator). The general control chip structure comprises a comparer and the like, wherein the comparer is connected with a noise elimination circuit, the noise elimination circuit is also connected with a grid frequency drift elimination circuit, the grid frequency drift elimination circuit is connected with a lack-phase circuit, the lack-phase circuit is connected with a trigger pulse generating circuit, the trigger pulse generating circuit is connected with a drive circuit, an analog digital converter is connected with a PID (proportion integration differentiation) algorithm module, the PID algorithm module is connected with an overcurrent and overvoltage protection circuit, the overcurrent and overvoltage protection circuit is connected with the drive circuit, a control register is connected with the trigger pulse generating circuit and a power source frequency control circuit, the power source frequency control circuit is connected with a power source waveform amplitude control circuit and a PWM (pulse-width modulation) generator, and a dead zone elimination circuit is connected with the trigger pulse generating circuit. According to the structure disclosed by the invention, electric energy can be converted, controlled and adjusted, and a user can select different power devices according to an application occasion without considering the change of the control circuit too much.
Description
Technical field
The present invention relates to a kind of chip, particularly relate to a kind of SCR, IGBT general controls chip architecture.
Background technology
Power semiconductor device is the basis of power electronic technology, it is the heart of electric power variable flow device, not only it plays vital effect to the volume of electric power variable flow device, weight, efficiency, performance and reliability etc., and also play very large impact to the price of device.The birth of new device often makes whole apparatus system looks that a huge change occurs, and promotes that power electronic technology advances.Since first thyristor comes out in the world from nineteen fifty-seven, through the R and D of more than 40 years, release nearly 40 kinds of various power semiconductor device, at present just along high frequency, intellectuality, high-power and modularization future development.
Current consumption maximum power electronic power components is exactly SCR (Silicon Controlled Rectifier, silicon controlled rectifier) and IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor), with corresponding control circuit Combination application in multiple fields, as controlled rectification, inversion, frequency conversion, pressure regulation, noncontacting switch, speed regualtion of AC motor, Switching Power Supply, lighting circuit, Traction Drive etc.
Current SCR control circuit mainly various phase-shift trigger circuit, main on market have two large classes:
The first kind is analogue type.Before the seventies, the trigger board of China SCR circuit is almost all made up of discrete component, and functional reliability is very poor.There are special integrated trigger circuit series of products the beginning of the eighties, its extensive use, radically improve the reliability of thyristor gating circuit.Synchronizing signal is the trigger of sawtooth waveforms, external sawtooth waveforms electric capacity and slew rate adjustment circuit, modulating pulse is exported through modulation, the method that its control signal of general principle compares with sawtooth waveforms or control signal superposes with synchronizing voltage carries out phase shift, and this type is subject to the impact of the factors such as component parameters dispersiveness, synchronizing voltage wave distortion, variations in temperature.Its circuit is comparatively complicated, and reliability is low, and anti-interference difference is its outstanding defect, and when synchronizing voltage degree of asymmetry is ± 1 °, the degree of asymmetry of phase-shift pulse will reach 4% ~ 6%.Thus cause the instability of output, and rating of set is larger, this situation is more obvious.
Equations of The Second Kind is programmable digital type.After the nineties, digital flip flop rises, formed by the device layout such as single-chip microcomputer, CPLD, adopt the method for programming to realize synchronous and phase shift, its outstanding defect is that circuit scale is comparatively large, and technical requirement is high, Software Anti-interference ability, volume cannot do very little, not easily realizes the miniaturization of product, volume production, limits it and applies widely.
Current IGBT control circuit mainly various pwm control circuit, main on market have two large classes:
The first kind is the control circuit be made up of general purpose controller.Its outstanding defect is that technical requirement is high, Software Anti-interference ability, and volume cannot do very little, not easily realizes the miniaturization of product, volume production, limits it and applies widely;
Equations of The Second Kind is special chip.This kind of chip is main dependence on import at present.Technically see the opened loop control that can only realize under manual control, still there is technical requirement high in a lot of application scenario, circuit scale is large, the problem of miniaturization difficult.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of SCR, IGBT general controls chip architecture, it makes user conveniently select different power devices according to application scenario and too much need not consider the change of control circuit, make power module to miniaturized and intelligent direction development simultaneously, meet the needs of following smart grid electricity usage side production development.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of SCR, IGBT general controls chip architecture, is characterized in that, SCR, IGBT general controls chip architecture comprises comparator, noise canceller circuit, circuit is eliminated in mains frequency drift, phase shortage circuit, phase-shift circuit, triggering pulse generator, drive circuit, analog-digital converter, pid algorithm module, overcurrent-overvoltage protecting circuit, serial communication interface, control register, power supply wave shape amplitude control circuitry, supply frequency control circuit, PWM generator, circuit is eliminated in dead band, carrier generator, power supply wave shape read-only memory, comparator is connected with noise canceller circuit, noise canceller circuit also drifts about with mains frequency and eliminates circuit and be connected, mains frequency drift is eliminated circuit and is connected with phase shortage circuit, phase shortage circuit is connected with triggering pulse generator, triggering pulse generator is connected with drive circuit, analog-digital converter and pid algorithm model calling, pid algorithm module is connected with overcurrent-overvoltage protecting circuit, overcurrent-overvoltage protecting circuit is connected with drive circuit, serial communication interface is connected with control register, control register and triggering pulse generator, supply frequency control circuit connects, supply frequency control circuit and power supply wave shape amplitude control circuitry, PWM generator connects, and circuit is eliminated in PWM generator and dead band, carrier generator, power supply wave shape read-only memory connects, and dead band is eliminated circuit and is connected with triggering pulse generator.
Preferably, described SCR, IGBT general controls chip architecture also comprises clock management circuits.
Preferably, institute SCR, IGBT general controls chip architecture comprises SCR control model or IGBT control model.
Preferably, described SCR control model and IGBT control model all comprise open loop mode of operation, closed loop mode of operation, with peripheral control unit cooperative work mode.
Positive progressive effect of the present invention is: the present invention can carry out various conversion, control and adjustment to electric energy, there is energy-conservation, to economize material, high yield feature, user is made conveniently to select different power devices according to application scenario and too much need not consider the change of control circuit, make power module to miniaturized and intelligent direction development simultaneously, meet the needs of following smart grid electricity usage side production development.
Accompanying drawing explanation
Figure 1 shows that the application principle circuit diagram of SCR, IGBT general controls chip architecture of the present invention.
Embodiment
Present pre-ferred embodiments is provided, to describe technical scheme of the present invention in detail below in conjunction with accompanying drawing.
As shown in Figure 1, SCR of the present invention, IGBT general controls chip architecture comprises comparator, noise canceller circuit, circuit is eliminated in mains frequency drift, phase shortage circuit, phase-shift circuit, triggering pulse generator, drive circuit, analog-digital converter (ADC, Analog-to-Digital Converter), PID (Proportional-Integral-Derivative, proportional-integral-differential) algoritic module, overcurrent-overvoltage protecting circuit, serial communication interface, control register, power supply wave shape amplitude control circuitry, supply frequency control circuit, PWM generator, circuit is eliminated in dead band, carrier generator, power supply wave shape read-only memory (ROM), clock management circuits, comparator is connected with noise canceller circuit, noise canceller circuit also drifts about with mains frequency and eliminates circuit and be connected, mains frequency drift is eliminated circuit and is connected with phase shortage circuit, phase shortage circuit is connected with triggering pulse generator, and triggering pulse generator is connected with drive circuit, analog-digital converter and pid algorithm model calling, pid algorithm module is connected with overcurrent-overvoltage protecting circuit, overcurrent-overvoltage protecting circuit and drive circuit, clock management circuits connects, and serial communication interface is connected with control register, control register and triggering pulse generator, supply frequency control circuit connects, supply frequency control circuit and power supply wave shape amplitude control circuitry, PWM generator connects, and circuit is eliminated in PWM generator and dead band, carrier generator, power supply wave shape read-only memory connects, and dead band is eliminated circuit and is connected with triggering pulse generator.The present invention makes user conveniently select different power devices according to application scenario and too much need not consider the change of control circuit, makes power module to miniaturized and intelligent direction development simultaneously, meets the needs of following smart grid electricity usage side production development.
SCR, IGBT general controls chip architecture of the present invention is integrated with SCR and IGBT core control circuit, and user, by external control signal, selects SCR control model or IGBT control model respectively.
Lower mask body is to SCR control model and IGBT control model.SCR control model comprises following Three models: (1) open loop mode of operation, three phase sine input is through comparator, convert to and input a synchronous ripple signal, enter mains frequency drift and eliminate circuit for eliminating in order to eliminate in input signal noise and to drift about the error brought due to mains frequency, become clean synchronous square-wave signal, then enter phase-shift circuit.The phase-shifted control signal of phase-shift circuit is provided by external voltage input, control voltage scope 0 ~ 5V, corresponding phase shift range 0 ~ 180 °.The phase shift controlling voltage of phase-shift circuit is changed through 10bitADC, as the initial setting value of phase-shift circuit Counter, when several values completely put by counter (count frequency is 102.4KHz) meter, produce a phase-shift pulse, this phase-shift pulse just moves Vcon* (1024/5) * (1/102400) second relative to synchronous square-wave signal.This phase-shift pulse triggers pulsewidth circuit for generating again, and the pulse width signal required for generation, exports after ovennodulation.In addition, output, when input signal phase shortage, shields by phase shortage circuit.(2) closed loop mode of operation, now feed back input voltage is changed through 10bit ADC, input pid algorithm module, and pid algorithm module is according to the initial setting value of preset value adjustment phase-shift circuit Counter, and phase shift function is identical with open loop mode afterwards.(3) with peripheral control unit cooperative work mode, now ADC is inoperative, phase shift angle and pulsewidth model selection write control register by peripheral control unit by serial line interface, chip controls phase-shift pulse according to the output of control register and exports and impulse form selection, and phase shift function is identical with open loop mode afterwards.IGBT control model comprises following Three models: (1) open loop mode of operation, External Control Voltage becomes 10bit digital quantity by ADC, this signal is as the target frequency of out-put supply, PWM generator is sampled until reach target frequency according to certain frequency change speed to the power supply wave shape in power supply wave shape ROM, supply frequency/amplitude control circuitry adjusts power supply wave shape amplitude according to linear or fan law according to frequency change simultaneously, the set square that the power supply wave shape of such output produces with carrier generator again compares, produce PWM output and after drive circuit, deliver to IGBT through small-pulse effect elimination and pulse daley (dead band elimination), (2) closed loop mode of operation, now ADC is used as the input of feedback signal, and desired value is arranged by serial line interface by user.PID closed control circuit is according to feedback and the automatic adjustment aim frequency values of target setting value, and PWM generation function is identical with open loop mode afterwards; (3) with peripheral control unit cooperative work mode, now ADC is inoperative, the parameters such as the selection of power supply target frequency, power supply wave shape and supply frequency/amplitude control mode selection are by peripheral control unit by serial ports write chip controls register, and chip carries out the work identical with open loop mode according to parameter.
SCR, IGBT general controls chip architecture of the present invention and existing similar chip framework compare following innovation: one, the integrated chip of the present invention control circuit of SCR and IGBT two kinds of power devices, can be used as the control of SCR and IGBT simultaneously.Domestic and international similar chip only has a kind of controlling functions, as domestic SCR control chip TC790, and can only control SCR; The SA4828 cake core of Britain then can only control IGBT.Two, chip SCR and IGBT control model all have Open loop and closed loop controlling functions, are a intelligent SOC.Domestic and international similar products only have opened loop control function.Three, chip SCR control section adopts digital phase shift mode, and outside phase shift controlling voltage is converted to digital quantity by AD converter, and phase-shift circuit carries out phase shift according to time digital quantity, and therefore phase shifting accuracy is high, reliable operation.Domestic similar products TC790 chip then adopts sawtooth waveforms to compare with extraneous control voltage and simulates the mode of phase shift, and phase shifting accuracy is low, works unreliable.Four, chip SCR control section has noise canceller circuit, circuit is eliminated in mains frequency drift, can adapt to the change of mains frequency.Domestic similar products TC790 chip is then without this function.
Those skilled in the art can carry out various remodeling and change to the present invention.Therefore, present invention covers the various remodeling in the scope falling into appending claims and equivalent thereof and change.
Claims (3)
1. a SCR, IGBT general controls chip architecture, is characterized in that, SCR, IGBT general controls chip architecture comprises comparator, noise canceller circuit, circuit is eliminated in mains frequency drift, phase shortage circuit, phase-shift circuit, triggering pulse generator, drive circuit, analog-digital converter, pid algorithm module, overcurrent-overvoltage protecting circuit, serial communication interface, control register, power supply wave shape amplitude control circuitry, supply frequency control circuit, PWM generator, circuit is eliminated in dead band, carrier generator, power supply wave shape read-only memory, comparator is connected with noise canceller circuit, noise canceller circuit also drifts about with mains frequency and eliminates circuit and be connected, mains frequency drift is eliminated circuit and is connected with phase shortage circuit, phase shortage circuit is connected with triggering pulse generator, triggering pulse generator is connected with drive circuit, analog-digital converter and pid algorithm model calling, pid algorithm module is connected with overcurrent-overvoltage protecting circuit, overcurrent-overvoltage protecting circuit is connected with drive circuit, serial communication interface is connected with control register, control register and triggering pulse generator, supply frequency control circuit connects, supply frequency control circuit and power supply wave shape amplitude control circuitry, PWM generator connects, and circuit is eliminated in PWM generator and dead band, carrier generator, power supply wave shape read-only memory connects, and dead band is eliminated circuit and is connected with triggering pulse generator, described SCR, IGBT general controls chip architecture comprises SCR control model and IGBT control model.
2. SCR, IGBT general controls chip architecture according to claim 1, is characterized in that, described SCR, IGBT general controls chip architecture also comprises clock management circuits.
3. SCR, IGBT general controls chip architecture according to claim 1, is characterized in that, described SCR control model and IGBT control model all comprise open loop mode of operation, closed loop mode of operation, with peripheral control unit cooperative work mode.
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| CN201210192455.9A CN102739021B (en) | 2012-06-09 | 2012-06-09 | General control chip structure for SCR (semiconductor control rectifier) and IGBT (insulated gate bipolar translator) |
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| CN103647443A (en) * | 2013-12-24 | 2014-03-19 | 西安西驰电气有限责任公司 | SCR efficient control circuit |
| CN109067177B (en) * | 2018-08-08 | 2020-01-24 | 北京东微系统科技有限公司 | Synchronous DC switching power supply and controller chip for synchronous DC switching power supply |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885716A (en) * | 2006-06-16 | 2006-12-27 | 谭启仁 | Silicon controlled remote control peripheral structure capable of realizing combined type electrical appliance to share a chip |
| CN201821255U (en) * | 2010-09-08 | 2011-05-04 | 攀钢集团攀枝花钢铁研究院有限公司 | Thyristor Power Regulator |
| CN202677121U (en) * | 2012-06-09 | 2013-01-16 | 奉化诚兴道电子科技有限公司 | General control chip architecture for SCR and IGBT |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1885716A (en) * | 2006-06-16 | 2006-12-27 | 谭启仁 | Silicon controlled remote control peripheral structure capable of realizing combined type electrical appliance to share a chip |
| CN201821255U (en) * | 2010-09-08 | 2011-05-04 | 攀钢集团攀枝花钢铁研究院有限公司 | Thyristor Power Regulator |
| CN202677121U (en) * | 2012-06-09 | 2013-01-16 | 奉化诚兴道电子科技有限公司 | General control chip architecture for SCR and IGBT |
Non-Patent Citations (2)
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| DYNEX SEMICONDUCTOR.SA4828 3-phase pulse width modulation engine.《SA4828 3-phase pulse width modulation engine》.2000,第1页至第18页. * |
| 游淑名.一种新型SCR移相触发控制芯片.《电子技术应用》.2010,第36卷(第12期),第51页至第57页. * |
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